CN112908397B

CN112908397B - Method for repairing DRAM memory array and related equipment

Info

Publication number: CN112908397B
Application number: CN202110302568.9A
Authority: CN
Inventors: 张朝锋; 王春娟; 王砚
Original assignee: Xian Unilc Semiconductors Co Ltd
Current assignee: Xian Unilc Semiconductors Co Ltd
Priority date: 2021-03-22
Filing date: 2021-03-22
Publication date: 2023-10-13
Anticipated expiration: 2041-03-22
Also published as: CN112908397A

Abstract

The embodiment of the application provides a method and related equipment for repairing a DRAM memory array, which are used for solving the problem of yield loss in the conventional repairing process. The method comprises the following steps: determining whether a storage block in the DRAM storage array meets a superblock restoration condition according to redundant resources and a failure superblock, wherein the superblock restoration condition is used for judging whether the number of the redundant resources in the DRAM storage array meets the restoration number of the failure superblock of the storage block, the redundant resources and the failure superblock belong to the storage block, the redundant resources are storage media used for restoring failure in the storage block, the storage block comprises superblocks and subblocks, and the failure superblock is the superblock which is detected to be failed in the storage block; if the superblock repairing condition is met, a corresponding superblock repairing scheme is generated; and repairing the storage blocks in the DRAM storage array according to the super block repairing scheme.

Description

Method for repairing DRAM memory array and related equipment

Technical Field

The embodiment of the application relates to the technical field of chips, in particular to a method for repairing a DRAM memory array and related equipment.

Background

In a chip, a DRAM memory array (Dynamic random access memory, a dynamic random access memory array, abbreviated as DRAM) often plays a role of secondary cache and temporary storage, and in a conventional use process, a storage medium corresponding to an address of a portion in a memory block in the DRAM memory array is sometimes used as a primary cache, or the portion of the address is used as internal logic detection. Therefore, the reliability level of the storage medium corresponding to the part of the address is required to be higher, and the part of the logical address needs to be repaired preferentially in the repairing process, so that the storage block is often called a super block in a storage block of the DRAM array, and in the storage block, sub-blocks outside the super block are often required to be not very high, and in many cases, the situation that part of the sub-blocks in the storage block are allowed to fail is allowed.

At present, the conventional repair method is often compared with the number of failed superblocks and the number of failed subblocks after the number of redundant resources capable of being repaired is determined, and when the number of redundant resources exceeds the number of failed superblocks and the number of failed subblocks, repair operation is considered to be capable of being repaired and executed. However, in practical applications, when the existing repair method is used for repairing, in some cases, when there are sub-blocks where the superblock can repair but the remaining redundant resources do not meet other failures, the current repair method determines that the chips which only meet the repair of the failed superblock are unrepairable chips, but in many cases, the chips where the failed superblock can be completely repaired in practice are also usable as normal chips, which results in that the conventional repair method at present has the situation that the chips which can actually meet the determination of the chips which can actually be used are unrepairable, thereby resulting in yield loss.

Disclosure of Invention

In the summary, a series of concepts in a simplified form are introduced, which will be further described in detail in the detailed description. The summary of the embodiments of the present application is not intended to define the key features and essential features of the claimed subject matter, nor is it intended to be used to determine the scope of the claimed subject matter.

The embodiment of the application provides a method and related equipment for repairing a DRAM memory array so as to improve the yield of repaired products.

To at least partially solve the above problems, in a first aspect, an embodiment of the present application provides a method for repairing a DRAM memory array, including:

determining whether a storage block in the DRAM storage array meets a superblock restoration condition according to redundant resources and a failure superblock, wherein the superblock restoration condition is used for judging whether the number of the redundant resources in the DRAM storage array meets the restoration number of the failure superblock of the storage block, the redundant resources and the failure superblock belong to the storage block, the redundant resources are storage media used for restoring failure in the storage block, the storage block comprises superblocks and subblocks, and the failure superblock is the superblock which is detected to be failed in the storage block;

If the superblock repairing condition is met, a corresponding superblock repairing scheme is generated;

and repairing the storage blocks in the DRAM storage array according to the super block repairing scheme.

Optionally, before the repairing the memory block in the DRAM memory array according to the superblock repairing scheme, the method further includes:

determining whether a storage block in the DRAM storage array meets a subblock repair condition according to residual redundant resources and invalid subblocks, wherein the residual redundant resources are the residual parts of the redundant resources after the redundant resources meet the superblock repair condition are removed, and the invalid subblocks are the subblocks in the storage block;

if the subblock repairing condition is met, a corresponding subblock repairing scheme is generated;

the repairing the memory block in the DRAM memory array according to the super block repairing scheme comprises the following steps:

and repairing the storage blocks in the DRAM storage array according to the super block repairing scheme and the sub block repairing scheme.

Optionally, the superblock repair condition includes repairing all failed superblocks;

the determining whether the storage block in the DRAM storage array meets the superblock repair condition according to the redundant resource and the failure superblock comprises the following steps:

Obtaining the number of redundant resources and the number of invalid super block addresses, wherein the number of redundant resources is obtained by counting according to the addresses of the redundant resources, and the number of the invalid super block addresses is determined according to the matching of the addresses of the super blocks and the invalid addresses;

judging whether the number of redundant resources exceeds the number of failed superblock addresses, wherein the number of failed superblock addresses is determined based on the superblock repair condition;

and if the superblock repairing condition is met, generating a corresponding superblock repairing scheme, which comprises the following steps:

and if the number of the redundant resources exceeds the number of the failed superblock addresses, generating a corresponding superblock repair scheme.

Optionally, the obtaining the number of redundant resources and the number of failed superblock addresses includes:

acquiring all super block addresses in the storage block, and determining a failure super block address according to the failure address information, wherein the failure super block address is an address matched with the super block address after being compared based on the address in the failure address information;

and counting the number of all the invalid super block addresses in the storage block to be used as the number of the invalid super block addresses.

Optionally, before the determining whether the memory block in the DRAM memory array meets the sub-block repair condition according to the remaining redundant resources and the failed sub-block, the method further comprises:

and determining resources to be used which meet the superblock repair conditions according to the redundant resources and the failure superblock, and determining the residual redundant resources according to the resources to be used and the redundant resources.

Optionally, the determining, according to the redundant resource and the failed superblock, a resource to be used that meets the superblock repair condition, and determining, according to the resource to be used and the redundant resource, the remaining redundant resource includes:

acquiring the number of the failed superblock addresses, and determining the number of resources to be used which meet the superblock repair condition according to the number of the failed superblock addresses;

and calculating the quantity of the residual redundant resources according to the quantity of the redundant resources and the quantity of the resources to be used.

Optionally, the subblock repair condition includes a subblock repair number, where the subblock repair number is at least one;

the determining whether the storage block in the DRAM storage array meets the subblock repair condition according to the residual redundant resources and the invalid subblock comprises the following steps:

Judging whether the number of the residual redundant resources exceeds the number of the sub-block repairs;

and if the subblock repairing condition is met, generating a corresponding subblock repairing scheme, including:

and if the number of the residual redundant resources exceeds the number of the sub-block repairs, generating a corresponding sub-block repair scheme.

Optionally, the generating the corresponding superblock repair scheme includes:

and matching the failure super block according to the address by utilizing the redundant resource, and generating corresponding first matching information, wherein the first matching information comprises the address of the failure super block and the address of the redundant resource for repairing the failure super block.

Optionally, the generating a corresponding sub-block repair scheme includes:

and matching the invalid sub-block according to the address by utilizing the residual redundant resource, and generating corresponding second matching information, wherein the second matching information comprises the address of the invalid sub-block and the address of the residual redundant resource for repairing the invalid sub-block.

Optionally, the repairing the memory block in the DRAM memory array according to the super block repairing scheme and the sub block repairing scheme includes:

Acquiring the first matching information and the second matching information;

combining the first matching information and the second matching information to obtain repair information;

and repairing the failure super block and the failure sub block according to addresses by utilizing the redundant resources according to the repairing information.

Optionally, the DRAM memory array includes at least one memory block;

before determining whether a memory block in the DRAM memory array satisfies a superblock repair condition based on the redundant resources and the failed superblock, the method further comprises:

testing each super block, each sub block and each redundant resource in each storage block in the DRAM storage array, and obtaining a test result, wherein the test result comprises invalid super block information, invalid sub block information and redundant resource information;

and determining the redundant resource, the failure super block and the failure sub-block according to the test result.

Optionally, after said determining whether a memory block in said DRAM memory array meets a subblock repair condition based on remaining redundant resources and failed subblocks, the method further comprises:

if the redundant resource meets the superblock repair condition and does not meet the subblock repair condition, repairing the storage block in the DRAM storage array according to the superblock repair scheme, and outputting prompt information, wherein the prompt information is used for indicating that all superblocks and partial subblocks of the storage block are repaired.

Optionally, after determining whether the memory block in the DRAM memory array meets the superblock repair condition according to the redundant resource and the failed superblock, the method further includes:

and if the super block repairing condition is not met, generating a super block preliminary repairing scheme according to the redundant resources, wherein the super block preliminary repairing scheme is used for repairing part of the failed super blocks in the storage blocks by utilizing all the redundant resources.

In a second aspect, an embodiment of the present application provides a repair apparatus for a DRAM memory array, including:

the first determining unit is configured to determine whether a storage block in the DRAM storage array meets a superblock repair condition according to a redundant resource and a failed superblock, where the superblock repair condition is used to determine whether the number of the redundant resource in the DRAM storage array meets the repair number of the failed superblock of the storage block, the redundant resource and the failed superblock both belong to the storage block, the redundant resource is a storage medium in the storage block for repairing the failure, the storage block includes a superblock and a sub-block, and the failed superblock is a superblock detected to have failed in the storage block;

The first generation unit is used for generating a corresponding superblock repair scheme if the superblock repair condition is met;

and the repairing unit is used for repairing the storage blocks in the DRAM storage array according to the super block repairing scheme.

Optionally, the apparatus further includes:

the second determining unit is used for determining whether the storage blocks in the DRAM storage array meet the subblock repair conditions according to the residual redundant resources and the invalid subblocks, wherein the residual redundant resources are the residual parts of the redundant resources after the redundant resources meet the superblock repair conditions are removed;

the second generating unit is used for generating a corresponding sub-block restoration scheme if the sub-block restoration condition is met;

and the repairing unit is also used for repairing the storage blocks in the DRAM storage array according to the super block repairing scheme and the sub block repairing scheme.

the first determination unit includes:

the acquisition module is used for acquiring the number of redundant resources and the number of invalid super block addresses, wherein the number of redundant resources is obtained by counting according to the addresses of the redundant resources, and the data of the invalid super block is determined according to the matching between the addresses of the super block and the invalid addresses;

The judging module is used for judging whether the number of the redundant resources exceeds the number of the failed superblock addresses, and the number of the failed superblock addresses is determined based on the superblock repair condition;

the first generation unit is specifically configured to generate a corresponding superblock repair scheme if the number of redundant resources exceeds the number of failed superblock addresses.

Optionally, the acquiring module includes:

the determining submodule is used for obtaining all the super block addresses in the storage block and determining the invalid super block address according to the invalid address information, wherein the invalid super block address is an address which is matched with the super block address after being compared with the address in the invalid address information;

and the statistics sub-module is used for counting the number of all the invalid super block addresses in the storage block and taking the number as the number of the invalid super block addresses.

Optionally, the apparatus further includes:

and the third determining unit is used for determining resources to be used which meet the superblock repair condition according to the redundant resources and the failure superblock, and determining the residual redundant resources according to the resources to be used and the redundant resources.

Optionally, the third determining unit includes:

the determining module is used for obtaining the number of the failed superblock addresses and determining the number of resources to be used which meet the superblock repair condition according to the number of the failed superblock addresses;

and the calculation module is used for calculating the quantity of the residual redundant resources according to the quantity of the redundant resources and the quantity of the resources to be used.

the second determining unit is specifically configured to determine whether the number of remaining redundant resources exceeds the number of sub-block repairs;

the second generating unit is specifically configured to generate a corresponding sub-block repair scheme if the number of remaining redundant resources exceeds the number of sub-block repairs.

Optionally, the first generating unit is further specifically configured to match the failed super block according to an address by using the redundant resource, and generate corresponding first matching information, where the first matching information includes an address of the failed super block and an address of the redundant resource for repairing the failed super block.

Optionally, the second generating unit is further specifically configured to match the failed sub-block according to an address by using the remaining redundant resource, and generate corresponding second matching information, where the second matching information includes an address of the failed sub-block and an address of the remaining redundant resource for repairing the failed sub-block.

Optionally, the repair unit includes:

the acquisition module is used for acquiring the first matching information and the second matching information;

the merging module is used for merging the first matching information and the second matching information to obtain repair information;

and the repair module is used for repairing the failure super block and the failure sub block according to the address by utilizing the redundant resources according to the repair information.

Optionally, the DRAM memory array includes at least one memory block;

the apparatus further comprises:

the testing unit is used for testing each super block, each sub block and each redundant resource in each storage block in the DRAM storage array and obtaining a testing result, wherein the testing result comprises failure super block information, failure sub block information and redundant resource information;

and the fourth determining unit is used for determining the redundant resource, the failure super block and the failure sub-block according to the test result.

Optionally, the apparatus further includes:

and the execution unit is used for repairing the storage blocks in the DRAM storage array according to the super block repairing scheme and outputting prompt information if the redundant resources meet the super block repairing condition and do not meet the sub block repairing condition, wherein the prompt information is used for indicating that all super blocks and part of sub blocks of the storage blocks are repaired.

Optionally, the execution unit is further configured to generate a superblock preliminary repair scheme according to the redundant resources if the superblock repair condition is not satisfied, where the superblock preliminary repair scheme is used to complete repair of a part of the failed superblock in the storage block by using the all redundant resources.

In a third aspect, an embodiment of the present invention further provides an electronic device, including at least one processor, and at least one memory and a bus connected to the processor; the processor and the memory complete communication with each other through a bus; the processor is configured to invoke program instructions in the memory to perform the repair method of the DRAM memory array of any of the first aspects.

In a fourth aspect, an embodiment of the present invention further provides a computer readable storage medium having stored thereon a program which, when executed by a processor, implements the method for repairing a DRAM memory array according to any of the first aspects.

Compared with the prior art, the logic chip capacitor circuit provided by the embodiment of the invention at least has the following beneficial effects:

the method for repairing the DRAM storage array and the related equipment provided by the embodiment of the invention comprise the following steps: determining whether a storage block in the DRAM storage array meets a superblock repair condition according to the redundant resources and the invalid superblock; if the superblock repairing condition is met, a corresponding superblock repairing scheme is generated; and repairing the memory blocks in the DRAM memory array according to the super block repairing scheme, so that the repairing function for the DRAM memory array is realized. In the above scheme, the superblock repair condition is used for judging whether the number of redundant resources in the DRAM storage array meets the repair number of failed superblocks of the storage block, the redundant resources and the failed superblocks belong to the storage block, the redundant resources are storage media used for repairing the failed storage blocks in the storage block, the storage block comprises superblocks and sub-blocks, the failed superblocks are superblocks which are detected to be failed in the storage block, so that in the repair process, when the number of the redundant resources meets the repair number of the failed superblocks, a superblock repair scheme is generated and the repair is performed on the DRAM storage array based on the superblock repair scheme, thereby ensuring that the repair of chips can be ensured when the redundant resources meet the superblock repair condition in the repair process, ensuring that the chips repairing the superblocks can also be used as normal chips, thereby improving the yield of products and solving the problem of lower yield in the conventional repair process.

Correspondingly, other related devices provided by the embodiment of the application also have the technical effects.

Drawings

For a clearer description of the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly described, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art:

FIG. 1 is a flowchart illustrating steps of a method for repairing a DRAM memory array according to an embodiment of the present application;

FIG. 2-A is a schematic diagram of a DRAM memory array according to an embodiment of the present application;

FIG. 2-B is a schematic flow chart of a DRAM memory array in a specific repairing process according to an embodiment of the present application;

FIG. 2-C is a schematic flow chart of another embodiment of the present application for repairing a DRAM memory array;

FIG. 3 is a schematic block diagram of a repair device for a DRAM memory array according to an embodiment of the present application;

FIG. 4 is a schematic block diagram of a repair device for a DRAM memory array according to an embodiment of the present application;

FIG. 5 is a schematic block diagram of an electronic device according to an embodiment of the present application;

fig. 6 is a schematic block diagram of a computer-readable storage medium according to an embodiment of the present application.

Detailed Description

The present application is described in further detail below with reference to the drawings and examples to enable those skilled in the art to practice the application by referring to the description.

It will be understood that terms, such as "having," "including," and "comprising," as used herein, do not preclude the presence or addition of one or more other elements or groups thereof.

In addition, it should be noted that the terms "disposed," "connected," and "connected" are to be construed broadly, unless otherwise specifically indicated and defined. For example, the connection can be fixed connection or detachable connection; can be directly connected or indirectly connected through an intermediate medium; may be integrally connected, or may be communication between two members. Or the two elements can be in signal transmission and data communication. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.

In a first aspect, an embodiment of the present application provides a method for repairing a DRAM memory array, which solves the problem of yield loss caused by a repair process of the memory array in the prior art, and the implementation steps of the specific scheme may be as shown in fig. 1, where the method includes:

101. and determining whether the storage blocks in the DRAM storage array meet the superblock repair condition according to the redundant resources and the invalid superblock.

The method comprises the steps of judging whether the number of redundant resources in a DRAM storage array meets the restoration number of failed superblocks of the storage blocks or not, wherein the redundant resources and the failed superblocks belong to the storage blocks, the redundant resources are storage media used for restoring the failure in the storage blocks, the storage blocks comprise superblocks and subblocks, and the failed superblocks are superblocks which are detected to be failed in the storage blocks.

102. And if the superblock repairing condition is met, generating a corresponding superblock repairing scheme.

103. And repairing the storage blocks in the DRAM storage array according to the super block repairing scheme.

In the above scheme, the DRAM memory array may be as shown in fig. 2-a, where BANK0-BANK3 are memory blocks, sub-blocks 0-21 are normal sub-blocks, and sub-blocks 22-23 are super-blocks. And the redundant resource, the failure super block and the failure sub block are all in one BANK in the DRAM storage array, namely in the storage block. Since the DRAM memory array contains at least one memory block. That is, it can be understood that the above-described operation can be performed for each memory block in the DRAM array in the repair process described above.

In step 101, when it is determined that the redundant resources can meet the superblock repair condition, the repair may be performed based on the number of the redundant resources and the number of superblock repair conditions or repair rules, for example, when the user needs to determine that all superblocks are valid, the superblock repair condition in this step may be that all superblocks are normal, so that when actually performed, the failed superblocks in the storage blocks may be traversed, and then it is determined whether the number of the redundant resources in each storage block can meet the number of addresses for repairing the failed superblocks. Of course, in some cases, if the user does not need to repair all the failed superblocks, a threshold may be set, so that the above determination is made according to the threshold. Specifically, the method in this step includes, but is not limited to, the above-mentioned manner, and the specific situation may be selected based on the actual requirement of the user.

In addition, when step 101 determines that the redundant resource can meet the superblock repair condition, a repair scheme for the corresponding superblock, that is, the superblock repair scheme, may be generated when step 102 is performed. Of course, in specific applications, the use condition of the redundant resource can also be determined based on the repair scheme so as to be used as a subsequent other step, and the specific condition can be determined according to actual needs.

For example, in the implementation of the foregoing solution, it may further involve a case that, on the basis of repairing the superblock, the sub-block needs to be repaired, that is, not only the failed superblock needs to be repaired by using the redundant resource, but also the failed sub-block needs to be repaired, so before the step 103 of the foregoing solution is performed, the foregoing solution may include: and determining whether the storage blocks in the DRAM storage array meet the subblock repair conditions according to the residual redundant resources and the invalid subblocks, wherein the residual redundant resources are the residual parts of the redundant resources after the redundant resources meet the superblock repair conditions.

And if the sub-block repair condition is met, generating a corresponding sub-block repair scheme.

Based on this, the repairing the memory block in the DRAM memory array according to the superblock repairing scheme in the foregoing step 103 may specifically include:

and repairing the memory blocks in the DRAM memory array according to the super block repairing scheme and the sub block repairing scheme.

After determining that the redundant resource can meet the repair requirement for the failed superblock in the DRAM storage array in the foregoing step, it is further required to determine whether the remaining redundant resource can meet the repair requirement for the failed sub-block, that is, determine whether the remaining redundant resource meets the sub-block repair condition, where in this step, the remaining redundant resource may be understood as the remaining redundant resource after determining that the redundant resource is used for repairing the superblock in the foregoing step 102, that is, meeting the repair condition of the superblock. The judging basis of the step is the residual redundant resource, so that the repairing requirements of the super block and the common sub block can be considered in the repairing process of the DRAM storage array, and when the fact that the redundant resource can meet the super block repairing condition is ensured, and then the sub block repairing condition can be met is judged, the judging basis is the residual redundant resource after meeting the super block repairing condition, and is not the original redundant resource, thereby ensuring that the repairing result is real and effective, ensuring that the repairing result is consistent with the judging expectation, and improving the accuracy of the repairing result of the DRAM storage array. Meanwhile, based on the method, the repairing process is carried out based on the superblock repairing condition and the sub-block repairing condition, so that the corresponding repairing condition can be set according to the needs of users in the repairing process, the repairing result can meet different repairing needs, and the method provided by the invention can have better flexibility.

For example, under certain conditions, the superblock repair condition may be one that requires all superblocks to be repaired well, such that in the foregoing example, the superblock repair condition may include repairing all failed superblocks. Based on this, in step 101, according to the redundant resource and the failed superblock, it is determined whether the storage block in the DRAM storage array meets the superblock repair condition, and the specific implementation may be:

first, the number of redundant resources and the number of failed superblock addresses are obtained. The redundant resource number is obtained by counting the addresses of the redundant resources, and the invalid super block address number is determined by matching the addresses of the super blocks with the invalid addresses.

And then judging whether the number of redundant resources exceeds the number of failed superblock addresses, wherein the number of failed superblock addresses is determined based on the superblock repair condition.

Corresponding to the specific implementation manner of step 101, in step 102, if the superblock repair condition is met, a corresponding superblock repair scheme is generated, which may specifically be: and if the number of the redundant resources exceeds the number of the failed superblock addresses, generating a corresponding superblock repair scheme.

Therefore, when the superblock repairing condition is that all repairing is performed, whether the number of redundant resources can exceed the number of the failed superblock addresses or not can be determined by comparing the number of the redundant resources with the number of the failed superblock addresses, and repairing results are predicted in a quantized mode, so that the repairing process is more visual and accurate.

Illustratively, for the implementation manner of obtaining the number of redundant resources and the number of failed superblock addresses in the foregoing example, the method may include:

firstly, all super block addresses in the storage block are obtained, and the invalid super block address is determined according to the invalid address information. The failure super block address is an address which is matched with the super block address after being compared based on the address in the failure address information. In this example, the failure address information may be acquired from a station dedicated to chip failure testing. Meanwhile, the mode of determining the invalid super block address according to the invalid address information can be based on that all the invalid addresses are matched with each super block address one by one, and if the matching is successful, the super block corresponding to the successfully matched super block address is invalid.

And then counting the number of all the failed super block addresses in the storage block as the number of the failed super block addresses.

The number of the failed super block addresses in the storage block can be accurately determined by matching the super block addresses with the failed address information, and the statistics number is used as the number of the failed super block addresses after the failed super block addresses are determined, so that a foundation is laid for the subsequent execution of corresponding repair operations.

Illustratively, in some embodiments, when it is determined that the redundant resources meet the superblock repair condition, it may be actually determined how many of the redundant resources are used to repair the failed superblock, that is, how many of the redundant resources are used to repair the superblock portion, and how much remain, so before performing step 103 to determine whether the storage blocks in the DRAM storage array meet the sub-block repair condition based on the remaining redundant resources and the failed sub-blocks, the method may further include a process of determining the resources to be used and the remaining redundant resources, specifically:

Therefore, the super block to be repaired can be determined based on the super block repair condition, and meanwhile, the redundant resources are corresponding to the repair of the failed super block, so that the resources to be used can be directly determined, the residual redundant resources after the resources to be used required by the super block repair are determined, and then a judgment basis is provided for the subsequent repair of the sub-blocks by using the residual redundant resources.

In the foregoing example, the determining, according to the redundant resource and the failed superblock, the resource to be used that meets the superblock repair condition, and determining, according to the resource to be used and the redundant resource, the remaining redundant resource may be executed specifically in the following manner:

firstly, acquiring the number of the failed superblock addresses, and determining the number of resources to be used which meet the superblock repair condition according to the number of the failed superblock addresses;

and then, calculating the quantity of the residual redundant resources according to the quantity of the redundant resources and the quantity of the resources to be used.

Therefore, the residual condition of the redundant resources after the superblock repair condition is met, namely the residual redundant resource quantity is determined in quantity, so that the follow-up analysis can be ensured in quantity when judging whether the residual redundant resources can meet the sub-block repair condition, and the convenience of the judging process is ensured.

For example, in some embodiments, the sub-block repair condition may include a sub-block repair number of at least one, since the sub-block repair condition may be at least a number of failed sub-blocks repaired;

based on this, in the foregoing step 103, it is determined whether the memory block in the DRAM memory array satisfies the sub-block repair condition according to the remaining redundant resources and the failed sub-block, and may be specifically: and judging whether the quantity of the residual redundant resources exceeds the repairing quantity of the sub-blocks.

Similarly, if the aforementioned step 104 satisfies the sub-block repair condition, a corresponding sub-block repair scheme is generated, and the specific execution may be:

The judgment process is carried out based on the number of the residual redundant resources and the number of the sub-block repairs, so that the number is used as the judgment basis for judging the subsequent repairable repair, the analysis can be carried out intuitively and simply, the accuracy of a predicted result is ensured, and a foundation is laid for the accuracy of the subsequent corresponding repair based on the predicted result.

For example, when repairing a DRAM memory array, it is actually possible to repair a redundant resource and a failed superblock or sub-block one-to-one according to an address, that is, in the process of generating a repair scheme, it is actually possible to understand that the address of each failed memory medium is matched with the address of the redundant resource to be repaired.

Based on this, the corresponding superblock repair scheme is generated in the foregoing example, and may be specifically:

and matching the failure super block according to the address by utilizing the redundant resource, and generating corresponding first matching information. The first matching information comprises addresses of failure super blocks and addresses of redundant resources for repairing the failure super blocks.

In this way, by matching the redundant resources with the failed superblocks according to the addresses, corresponding first matching information is obtained, and since the first matching information contains the address of each failed superblock and the address of the redundant resource for repairing, the corresponding repairing operation can be ensured to be executed according to the first matching information, and meanwhile, the tracing and analysis can be ensured based on the first matching information if the abnormality or other problems exist in the repairing process.

Illustratively, the repair scheme for the sub-blocks is the same as that described in the previous example, so that the corresponding sub-block repair scheme is generated in the previous example, and may be specifically executed as follows:

and matching the failure sub-block according to the address by utilizing the residual redundant resources, and generating corresponding second matching information. The second matching information comprises addresses of invalid sub-blocks and addresses of residual redundant resources for repairing the invalid sub-blocks.

Because the second matching information contains the address of the failure sub-block and the corresponding address of the residual redundant resource for repairing the failure of the failure sub-block, the execution of the second matching information in the subsequent repairing process is ensured, and a foundation is laid for the subsequent repairing operation. Meanwhile, the second matching information can also be used as a basis for subsequent problem and fault investigation and backtracking when problems or anomalies exist in the subsequent repair process.

Illustratively, the repairing the memory block in the DRAM memory array according to the super block repairing scheme and the sub block repairing scheme in the foregoing step 105 may include:

firstly, acquiring the first matching information and the second matching information;

Then, combining the first matching information and the second matching information to obtain repair information;

and finally, repairing the failure super block and the failure sub block according to addresses by utilizing the redundant resources according to the repairing information.

Because the combined repair information contains the first matching information for repairing the super block and the second matching information for repairing the sub block, the repair can be carried out only through one piece of information in the subsequent repair, and the operation complexity in the repair process is simplified.

Illustratively, the DRAM memory array includes at least one of the memory blocks. Meanwhile, in this embodiment, before repairing the DRAM memory array, it may be further determined that a failed memory medium exists in the DRAM, that is, each memory block is tested separately to obtain a failed superblock and a failed sub-block that need to be repaired, and a redundant resource that can repair both of them. Thus, before determining whether the memory blocks in the DRAM memory array satisfy the superblock repair condition based on the redundant resources and the failed superblock in step 101, the method of this example may further include:

firstly, testing each super block, each sub block and each redundant resource in each storage block in the DRAM storage array, and obtaining a test result, wherein the test result comprises invalid super block information, invalid sub block information and redundant resource information;

And then, determining the redundant resource, the failure super block and the failure sub-block according to the test result.

It should be noted that, in this example, the test process may be performed by a machine dedicated to chip testing, and the specific test process may be: firstly, addresses can be allocated, addresses of super blocks in a BANK (memory block) of a DRAM are allocated to super block address tests, addresses of all redundant resources in the memory block are allocated to redundant resource address tests, and a space of a machine failure address memory is allocated according to the size of an array to be tested for recording failure addresses generated in the test process; and then, testing the super block for testing the super block address distributed in the previous step, recording the failure part in the failure address memory in the test process, testing other sub blocks in the same way and recording the sub blocks in the failure address memory, and traversing all the storage blocks to obtain a test result.

Therefore, a test result is obtained through a pre-test, and redundant resources, invalid super blocks and invalid sub-blocks are determined according to the test result, so that a foundation can be laid for the follow-up determination of each part (redundant resources, invalid super blocks and invalid sub-blocks) in each storage block.

For example, in some cases, there may be a case where the user does not meet the sub-block repair condition after repairing all the failed super-blocks, and in this case, since there may be a repair requirement that only a part of the failed sub-blocks need to be repaired, where in this case, after determining in step 103 whether the storage blocks in the DRAM storage array meet the sub-block repair condition according to the remaining redundant resources and the failed sub-blocks, the method further includes:

For example, in some cases, it may also relate to a situation that the redundant resource does not meet the repair condition of the failed superblock, but still needs to be repaired as much as possible by using the current redundant resource, so after determining, according to the redundant resource and the failed superblock, whether the storage block in the DRAM storage array meets the superblock repair condition in the foregoing steps, the method further includes:

Therefore, the function of repairing partial failure superblocks can be ensured when the redundant resources do not meet the superblock repairing conditions, and then the effect of repairing partial failure superblocks can be realized when the redundant resources are fewer, and the repairing requirements of certain special scenes are met.

Further, as a specific implementation procedure of the above method, the embodiment of the present invention further provides a specific DRAN repair procedure, which may be specifically shown in fig. 2-B, including:

s100, starting execution;

s110, testing the super blocks, namely testing the storage array to determine the number of redundant resources and the number of invalid super blocks;

s120, whether the repair is possible or not, namely whether redundant resources in each storage block in the current DRAM storage array meet the super block repair condition is judged in sequence;

s130, repairing redundant resources, namely, when the condition of repairing the super block is not met, firstly utilizing all current redundant resources to carry out primary repairing;

S140, generating a repair file, namely generating a superblock repair scheme corresponding to the current storage block when the superblock repair condition is determined to be met;

s150, full array testing, namely sequentially traversing and analyzing all storage blocks;

s160, whether the memory blocks in the whole DRAM memory array can be repaired or not, namely whether all the memory blocks in the whole DRAM memory array meet the super block repair condition or not is sequentially analyzed;

s170, repairing redundant resources, namely repairing partial failure super blocks which can be repaired by utilizing the existing redundant resources if the judging result of the step S150 is not met;

s180, generating a repair file, namely if all storage blocks in the storage array are determined to meet the super block repair condition, generating repair schemes corresponding to all the storage blocks

And S190, ending, namely executing the repair operation according to the repair scheme.

In addition, in practical application, the above scheme may further involve a process of analyzing and judging the sub-blocks, so this embodiment further provides another repair process of the DRAM memory array, which may specifically be as shown in fig. 2-C, including:

s200, starting;

s210, determining super block addresses, namely counting all super block addresses and the number in the DRAM storage array;

S220, counting failure addresses, and distributing redundant resources, namely counting all failure superblocks and failure subblocks in the DRAM storage array;

s230, judging whether the super block can be repaired or not, namely judging whether the redundant resource meets the super block repair condition or not;

s240, repairing the super block by using all the redundant resources to generate a repairing file, namely when the step S230 determines that the redundant resources cannot meet the super block repairing condition, repairing a part of the failed super block by using the current redundant resources;

s250, repairing the redundant resources of the super block preferentially, and generating a repairing file, namely when the step S230 determines that the redundant resources can meet the super block repairing condition, preferentially utilizing the redundant resources of the super block to match, and generating a corresponding super block repairing scheme;

s260, determining addresses of secondary sub-blocks, namely determining sub-blocks outside the super-block;

s270, counting failure addresses, distributing redundant resources, counting failure sub-blocks in sub-blocks, and determining residual redundant resources based on a super-block repair scheme;

s280, judging whether the sub-block can be repaired or not, namely judging whether the residual redundant resources meet the sub-block repair condition or not;

s290, repairing the failure addresses of the pairs except the super blocks by using the redundant resources, and generating a repairing file, namely when the fact that the residual redundant resources meet the sub-block repairing conditions is determined, generating a repairing scheme according to the residual redundant resources and the failure sub-blocks;

S300, repairing the super block by using all the redundant resources, and generating a repairing file, namely when the fact that the residual redundant resources do not meet the sub-block repairing condition is determined, performing primary repairing on partial failure sub-blocks according to the residual redundant resources;

s310, merging the superblock and the repair files of other addresses, namely generating an overall repair scheme of the DRAM storage array according to the superblock repair scheme generated in the step S250 and the sub-block repair scheme generated in the step S290;

s320, writing the repair scheme into the chip, and performing repair effect, namely performing repair according to the whole repair scheme of the S310;

s330, ending.

Based on the repair process, the corresponding repair mode can be completed under different conditions, and the corresponding repair process can be ensured to be executed according to the actual needs of users, so that the repair functions of multiple modes of the DRAM storage array are realized, and different repair demands of the users are met.

In a second aspect, based on the same inventive concept of the above method, an embodiment of the present disclosure further provides a repair device for a DRAM memory array, where the function and effect of the repair device are as in the foregoing first aspect, and the process performed by the repair device is not described in detail herein, and the exemplary device is as shown in fig. 3, and includes:

The first determining unit 31 may be configured to determine, according to a redundant resource and a failed superblock, whether a storage block in the DRAM storage array meets a superblock repair condition, where the superblock repair condition is used to determine whether the number of redundant resources in the DRAM storage array meets the repair number of the failed superblock of the storage block, where the redundant resource and the failed superblock both belong to the storage block, where the redundant resource is a storage medium in the storage block that may be used to repair failure, where the storage block includes a superblock and a sub-block, and where the failed superblock is a superblock detected to have failed in the storage block;

the first generating unit 32 may be configured to generate a corresponding superblock repair scheme if the first determining unit 31 determines that the superblock repair condition is satisfied;

and the repairing unit 33 is configured to repair the memory blocks in the DRAM memory array according to the superblock repairing scheme generated by the first generating unit 32.

Optionally, as shown in fig. 4, the apparatus further includes:

a second determining unit 34, configured to determine whether a storage block in the DRAM storage array meets a sub-block repair condition according to a remaining redundant resource and a failed sub-block, where the remaining redundant resource is a remaining portion of the redundant resource after the redundant resource meets the super-block repair condition is removed;

The second generating unit 35 may be configured to generate a corresponding sub-block repair scheme if the second determining unit 34 determines that the sub-block repair condition is satisfied;

the repairing unit 33 may be further configured to repair the memory blocks in the DRAM memory array according to the super block repairing scheme generated by the first generating unit 32 and the sub block repairing scheme generated by the second generating unit 35.

Alternatively, as shown in FIG. 4, the superblock repair condition includes repairing all failed superblocks;

the first determining unit 31 includes:

the obtaining module 311 may be configured to obtain the number of redundant resources and the number of addresses of failed superblocks, where the number of redundant resources is obtained by counting addresses of the redundant resources, and the data of the failed superblocks is determined by matching the addresses of the superblocks with the failed addresses;

a judging module 312, configured to judge whether the number of redundant resources acquired by the acquiring module 311 exceeds the number of failed superblock addresses, where the number of failed superblock addresses is determined based on the superblock repair condition;

the first generating unit 32 may be specifically configured to generate a corresponding superblock repair scheme if the number of redundant resources exceeds the number of failed superblock addresses.

Optionally, as shown in fig. 4, the obtaining module 311 includes:

the determining submodule 3111 may be configured to obtain all the super block addresses in the storage block, and determine a failed super block address according to the failed address information, where the failed super block address is an address that matches the super block address after comparing the address in the failed address information with the address in the super block address;

a statistics sub-module 3112 may be configured to count the number of failed superblock addresses determined by all of the determining sub-modules 3111 in the memory block as the number of failed superblock addresses.

Optionally, as shown in fig. 4, the apparatus further includes:

the third determining unit 36 may be configured to determine, according to the redundant resource and the failed superblock, a resource to be used that meets the superblock repair condition, and determine, according to the resource to be used and the redundant resource, the remaining redundant resource, so that the second determining unit 34 determines according to the remaining redundant resource.

Optionally, as shown in fig. 4, the third determining unit 36 includes:

the determining module 361 may be configured to obtain the number of failed superblock addresses, and determine, according to the number of failed superblock addresses, the number of resources to be used that satisfies the superblock repair condition;

The calculating module 362 may be configured to calculate the remaining number of redundant resources according to the number of redundant resources and the number of resources to be used determined by the determining module 361.

Optionally, as shown in fig. 4, the sub-block repair condition includes a sub-block repair number, where the sub-block repair number is at least one;

the second determining unit 34 may specifically be configured to determine whether the number of remaining redundant resources exceeds the number of sub-block repairs;

the second generating unit 35 may specifically be configured to generate a corresponding sub-block repair scheme if the number of remaining redundant resources exceeds the number of sub-block repairs.

Optionally, as shown in fig. 4, the first generating unit 32 may be further specifically configured to match the address of the failed superblock by using the redundant resource, and generate corresponding first matching information, where the first matching information includes the address of the failed superblock and the address of the redundant resource that may be used to repair the failed superblock.

Optionally, as shown in fig. 4, the second generating unit 35 may be further specifically configured to match the failed sub-block with the remaining redundant resources according to an address, and generate corresponding second matching information, where the second matching information includes an address of the failed sub-block and an address of the remaining redundant resources that may be used to repair the failed sub-block.

Optionally, as shown in fig. 4, the repairing unit 33 includes:

the obtaining module 331 may be configured to obtain the first matching information and the second matching information;

the merging module 332 may be configured to merge the first matching information and the second matching information acquired by the acquiring module 331 to obtain repair information;

and a repair module 333, configured to repair the failed superblock and the failed sub-block according to addresses by using the redundant resources according to the repair information obtained by the merge module 332.

Optionally, as shown in fig. 4, at least one of the memory blocks is included in the DRAM memory array;

the apparatus further comprises:

a test unit 37, configured to test each super block, each sub block, and each redundant resource in each storage block in the DRAM storage array, and obtain a test result, where the test result includes failure super block information, failure sub block information, and redundant resource information;

the fourth determining unit 38 may be configured to determine the redundant resource, the failed superblock, and the failed sub-block according to the obtained test result of the testing unit 37, so that the first determining unit 31 makes a judgment based on the redundant resource.

Optionally, as shown in fig. 4, the apparatus further includes:

the executing unit 39 may be configured to repair the memory block in the DRAM memory array according to the superblock repair scheme if the second determining unit 34 determines that the redundancy resource meets the superblock repair condition and does not meet the sub-block repair condition, and output a hint information, where the hint information may be used to indicate that all superblocks and part of the sub-blocks of the memory block have been repaired.

Optionally, as shown in fig. 4, the executing unit 39 may be further specifically configured to generate a superblock preliminary repair scheme according to the redundant resource if the first determining unit 31 determines that the redundant resource does not meet the superblock repair condition, where the superblock preliminary repair scheme is used to complete repair of a part of the failed superblock in the storage block by using the all redundant resources.

Fig. 5 is a schematic diagram illustrating a partial structure of a repair device for a DRAM memory array according to an embodiment of the present invention. The means of repairing means of a DRAM memory array comprises a memory 501, the memory 501 being adapted to store a program for performing the method of the first embodiment described above. The apparatus of the DRAM memory array repair apparatus further comprises a processor 502 coupled to the memory 501, the processor 502 being configured to execute the program stored in the memory 501.

The processor 502, when executing the computer program, implements the steps of the method of repairing a DRAM memory array in the first embodiment described above. Alternatively, the processor, when executing the computer program, implements the functions of the modules/units in the apparatus of the repair apparatus of a DRAM memory array of the second embodiment described above.

The present embodiment also provides a computer readable storage medium, as shown in fig. 6, on which a computer program 601 is stored, the computer program 601 implementing the method for repairing a DRAM memory array according to any of the embodiments of the first aspect, when executed by a processor.

The embodiment provides a method for repairing a DRAM memory array and related equipment, wherein the method comprises the following steps: determining whether a storage block in the DRAM storage array meets a superblock repair condition according to the redundant resources and the invalid superblock; if the superblock repairing condition is met, a corresponding superblock repairing scheme is generated; and repairing the memory blocks in the DRAM memory array according to the super block repairing scheme, so that the repairing function for the DRAM memory array is realized. In the above scheme, the superblock repair condition is used for judging whether the number of redundant resources in the DRAM storage array meets the repair number of failed superblocks of the storage block, the redundant resources and the failed superblocks belong to the storage block, the redundant resources are storage media used for repairing the failed storage blocks in the storage block, the storage block comprises superblocks and sub-blocks, the failed superblocks are superblocks which are detected to be failed in the storage block, so that in the repair process, when the number of the redundant resources meets the repair number of the failed superblocks, a superblock repair scheme is generated and the repair is performed on the DRAM storage array based on the superblock repair scheme, thereby ensuring that the repair of chips can be ensured when the redundant resources meet the superblock repair condition in the repair process, ensuring that the chips repairing the superblocks can also be used as normal chips, thereby improving the yield of products and solving the problem of lower yield in the conventional repair process.

In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.

Although embodiments of the present invention have been disclosed above, it is not limited to the details and embodiments shown and described, it is well suited to various fields of use for which the invention would be readily apparent to those skilled in the art, and accordingly, the invention is not limited to the specific details and illustrations shown and described herein, without departing from the general concepts defined in the claims and their equivalents.

Claims

1. A method for repairing a DRAM memory array, comprising:

2. The method of claim 1, wherein prior to the repairing the memory blocks in the DRAM memory array according to the superblock repair scheme, the method further comprises:

3. The method of claim 2, wherein the superblock repair condition comprises repairing all of the failed superblocks;

judging whether the number of redundant resources exceeds the number of the failed superblock addresses or not so as to judge whether the number of the failed superblock addresses meets the superblock repair condition or not;

4. The method of claim 3, wherein the obtaining the number of redundant resources and the number of failed superblock addresses comprises:

5. The method of claim 2, wherein prior to said determining whether a memory block in the DRAM memory array satisfies a subblock repair condition based on remaining redundant resources and failed subblocks, the method further comprises:

6. The method of claim 5, wherein the determining the resources to be used that satisfy the superblock repair condition based on the redundant resources and the failed superblock, and determining the remaining redundant resources based on the resources to be used and the redundant resources comprises:

7. The method of claim 6, wherein the sub-block repair condition comprises a number of sub-block repairs, the number of sub-block repairs being at least one;

8. The method of claim 7, wherein the generating a corresponding superblock repair scheme comprises:

9. The method of claim 8, wherein generating the corresponding sub-block repair scheme comprises:

10. The method of claim 9, wherein the repairing the memory blocks in the DRAM memory array according to the superblock repair scheme and the sub-block repair scheme comprises:

acquiring the first matching information and the second matching information;

11. The method of claim 1, wherein at least one of said memory blocks is included in said DRAM memory array;

12. The method of claim 2, wherein after said determining whether a memory block in said DRAM memory array satisfies a subblock repair condition based on remaining redundant resources and failed subblocks, said method further comprises:

13. The method of claim 1, wherein after said determining whether a memory block in said DRAM memory array satisfies a superblock repair condition based on redundant resources and a failed superblock, said method further comprises:

14. A repair device for a DRAM memory array, comprising:

15. The apparatus of claim 14, wherein the apparatus further comprises:

16. The apparatus of claim 15, wherein the superblock repair condition comprises repairing all failed superblocks;

the first determination unit includes:

the acquisition module is used for acquiring the number of redundant resources and the number of invalid super block addresses, wherein the number of redundant resources is obtained by counting the addresses of the redundant resources, and the number of the invalid super block addresses is determined by matching the addresses of the super blocks with the invalid addresses;

The judging module is used for judging whether the number of the redundant resources exceeds the number of the failed superblock addresses or not so as to judge whether the number of the failed superblock addresses meets the superblock repairing condition or not;

17. The apparatus of claim 16, wherein the acquisition module comprises:

18. The apparatus of claim 15, wherein the apparatus further comprises:

19. The apparatus of claim 18, wherein the third determining unit comprises:

20. The apparatus of claim 19, wherein the sub-block repair condition comprises a number of sub-block repairs, the number of sub-block repairs being at least one;

21. The apparatus of claim 20, wherein the device comprises a plurality of sensors,

the first generation unit is further specifically configured to match the failed super block according to an address by using the redundant resource, and generate corresponding first matching information, where the first matching information includes an address of the failed super block and an address of the redundant resource for repairing the failed super block.

22. The apparatus of claim 21, wherein the device comprises a plurality of sensors,

the second generating unit is further specifically configured to match the failed sub-block according to an address by using the remaining redundant resource, and generate corresponding second matching information, where the second matching information includes an address of the failed sub-block and an address of the remaining redundant resource for repairing the failed sub-block.

23. The apparatus of claim 22, wherein the repair unit comprises:

24. The apparatus of claim 14 wherein at least one of said memory blocks is included in said DRAM memory array;

the apparatus further comprises:

25. The apparatus of claim 15, wherein the apparatus further comprises:

26. The apparatus of claim 25, wherein the device comprises a plurality of sensors,

and the execution unit is further configured to generate a superblock preliminary repair scheme according to the redundant resources if the superblock repair condition is not satisfied, where the superblock preliminary repair scheme is used to repair a part of the failed superblock by using all the redundant resources.

27. An electronic device comprising a processor and a memory coupled to the processor, the processor for invoking program instructions in the memory to perform the method of repairing a DRAM memory array as defined in any of claims 1-13.

28. A computer-readable storage medium, characterized in that a program is stored thereon, which when executed by a processor, implements the repair method of a DRAM memory array according to any of claims 1 to 13.