CN112899647A - Preparation method of one-dimensional cadmium sulfoselenide semiconductor nanowire, nanowire and device - Google Patents

Preparation method of one-dimensional cadmium sulfoselenide semiconductor nanowire, nanowire and device Download PDF

Info

Publication number
CN112899647A
CN112899647A CN202110054151.5A CN202110054151A CN112899647A CN 112899647 A CN112899647 A CN 112899647A CN 202110054151 A CN202110054151 A CN 202110054151A CN 112899647 A CN112899647 A CN 112899647A
Authority
CN
China
Prior art keywords
cadmium
dimensional
nanowire
semiconductor nanowire
sulfide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110054151.5A
Other languages
Chinese (zh)
Inventor
戴放
沈吉
刘彬
常维静
徐叔喜
王仕鑫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China North Industries Group Corp No 214 Research Institute Suzhou R&D Center
Original Assignee
China North Industries Group Corp No 214 Research Institute Suzhou R&D Center
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China North Industries Group Corp No 214 Research Institute Suzhou R&D Center filed Critical China North Industries Group Corp No 214 Research Institute Suzhou R&D Center
Priority to CN202110054151.5A priority Critical patent/CN112899647A/en
Publication of CN112899647A publication Critical patent/CN112899647A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/305—Sulfides, selenides, or tellurides
    • C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/60—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape characterised by shape
    • C30B29/62—Whiskers or needles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • H01L31/1896—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates for thin-film semiconductors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

The invention discloses a preparation method of a one-dimensional cadmium selenide semiconductor nanowire, which comprises the following steps: depositing a metal catalyst film on a substrate; uniformly mixing cadmium sulfide and cadmium selenide in the presence of protective gas; heating the substrate on which the catalyst film is deposited and the mixed cadmium sulfide and cadmium selenide, and obtaining the nanowire by a chemical vapor deposition method. The chemical vapor deposition method can realize large-area batch growth, effectively control the growth direction and length of the semiconductor nanowire and obviously improve the carrier mobility. The prepared photoelectric detector has excellent performance.

Description

Preparation method of one-dimensional cadmium sulfoselenide semiconductor nanowire, nanowire and device
Technical Field
The invention relates to the technical field of nano material synthesis, in particular to a preparation method of a one-dimensional cadmium sulfoselenide semiconductor nanowire, the one-dimensional cadmium sulfoselenide semiconductor nanowire and a device comprising the one-dimensional cadmium sulfoselenide semiconductor nanowire.
Background
Semiconductor nanowires/ribbons play an important role in electronic, optoelectronic and nanoelectromechanical devices, while they can also be used as additives in other materials, as wiring in integrated circuits, as field emission devices and as nanosensors. The II-VI semiconductor nanowire has unique photoelectric characteristics and is very expected to become a next-generation high-performance photoelectric material. In a plurality of research fields of photoelectric devices, the photoelectric characteristics of the semiconductor nanowire can be greatly improved by changing the carrier mobility of the semiconductor nanowire through doping. The mobility of semiconductor nanowires is related to a number of factors, such as the growth direction, doping, crystalline quality, and surface state of the nanowires.
The current generation of uniformly doped mixed semiconductor nanowires remains a challenge. At present, the growth modes of the nanowire are mainly two, namely a gas-liquid-solid growth mode and a gas-solid growth mode. In a gas-liquid-solid growth mode, the melting point of a catalyst for growing the nanowire is lower than the growth temperature of the nanowire, the growth process is completed in a liquid phase, and each crystal face grows uniformly and generally has no good controllability. In a gas-solid growth mode, the high-melting-point metal catalyst exists as a solid crystal all the time, and the lowest energy crystal face of the high-melting-point metal catalyst can be regulated and controlled to selectively extend the nanowire so as to control the growth of the nanowire. The invention is achieved accordingly.
Disclosure of Invention
In view of the above technical problems, the present invention aims to: the preparation method of the one-dimensional cadmium sulfoselenide semiconductor nanowire is provided, the large-area batch growth can be realized by adopting a chemical vapor deposition method, the growth direction and the length of the semiconductor nanowire can be effectively controlled, and the carrier mobility is obviously improved. The prepared photoelectric detector has excellent performance.
The technical scheme of the invention is as follows:
a preparation method of a one-dimensional cadmium sulfoselenide semiconductor nanowire comprises the following steps:
s01: depositing a metal catalyst film on a substrate;
s02: uniformly mixing cadmium sulfide and cadmium selenide in the presence of protective gas;
s03: and (4) heating the substrate obtained in the step (S01) and the mixed cadmium sulfide and cadmium selenide, and obtaining the one-dimensional nanowire by a chemical vapor deposition method.
In a preferred technical solution, in the step S01, the metal catalyst thin film is Ni, Cr, or Pt, and the thickness of the metal catalyst thin film is 5nm to 10 nm.
In a preferred technical solution, the shielding gas in the step S02 is N2And Ar2Mixed gas with the mixing ratio of N2：Ar2=6：4。
In a preferred technical solution, the heating method in the step S03 includes heating to 690-.
In a preferred technical scheme, in the step S02, the mixing ratio of cadmium sulfide and cadmium selenide is CdS: CdSe = 3.7: 6.3.
the invention also discloses a one-dimensional cadmium sulfoselenide semiconductor nanowire obtained by adopting the preparation method of the one-dimensional cadmium sulfoselenide semiconductor nanowire.
The invention also discloses a device, which comprises the one-dimensional cadmium sulfoselenide semiconductor nanowire prepared by the method.
The invention also discloses a photoelectric detector, which sequentially comprises the following components from bottom to top: the cadmium selenide sulfide nanowire array comprises a silicon dioxide substrate, metal electrodes on two sides and a one-dimensional cadmium selenide sulfide semiconductor nanowire, wherein the one-dimensional cadmium selenide sulfide semiconductor nanowire is the one-dimensional cadmium selenide sulfide semiconductor nanowire.
The invention also discloses a preparation method of the photoelectric detector, which comprises the following steps:
s11: depositing a metal catalyst film on a substrate;
s12: uniformly mixing cadmium sulfide and cadmium selenide in the presence of protective gas;
s13: heating the substrate in the step S11 and the mixed cadmium sulfide and cadmium selenide, obtaining the nanowire by a chemical vapor deposition method, and rapidly cooling to room temperature under protective gas flow;
s14: mechanically stripping the substrate of the one-dimensional cadmium selenide sulfide semiconductor nanowire to transfer the one-dimensional cadmium selenide sulfide semiconductor nanowire to SiO2A substrate;
s15: and preparing electrode films at two ends of the nanowire by a photoetching process.
In a preferred technical scheme, the electrode film is gold, and the thickness of the electrode film is 250nm-300 nm.
Compared with the prior art, the invention has the advantages that:
the invention discloses a method for growing a CdSSe semiconductor nanowire/ribbon by using a gas-solid method, which is used for obtaining a one-dimensional CdSSe semiconductor nanowire with very thin thickness. The prepared photoelectric detector has excellent performance.
Drawings
The invention is further described with reference to the following figures and examples:
FIG. 1 is a flow chart of a method for preparing a one-dimensional cadmium sulfoselenide semiconductor nanowire according to the present invention;
FIG. 2 is an electron microscope image of a one-dimensional cadmium sulfoselenide semiconductor nanowire/ribbon prepared by the method of the present invention;
FIG. 3 is an electron microscope image of the cadmium sulfoselenide semiconductor nanoribbon Au electrode of the invention;
FIG. 4 is a schematic diagram of the change of current with bias voltage of the photodetector prepared by the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings in conjunction with the following detailed description. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
As shown in figure 1, the preparation method of the one-dimensional cadmium sulfoselenide semiconductor nanowire of the invention has a nanowire growth mechanism of a gas-solid growth mechanism, and comprises the following steps:
s01: depositing a metal catalyst film on a substrate;
s02: uniformly mixing cadmium sulfide and cadmium selenide in the presence of protective gas;
s03: and (4) heating the substrate obtained in the step (S01) and the mixed cadmium sulfide and cadmium selenide, and obtaining the one-dimensional nanowire by a chemical vapor deposition method.
One-dimensional nanowires are referred to herein as nanowires that are obtained with very thin thickness, very close to one-dimensional.
In step S01, the substrate is a single crystal Si substrate, the metal catalyst thin film is Ni, Cr, or Pt, and the thickness of the metal catalyst thin film is 5nm to 10 nm.
The protective gas in step S02 is an inert gas.
In a preferred embodiment, N is2And Ar2The purity of the mixed gas and the purity of the two gases are both 99.999 percent, and the mixing proportion is N2：Ar2=6：4。
In step S02, the cadmium sulfide and cadmium selenide are preferably in powder form, with a purity of 99.999% and a particle size of less than 100 mesh.
In a preferred embodiment, the mixing ratio of cadmium sulfide and cadmium selenide is CdS: CdSe = 3.7: 6.3.
the heating method in step S03 includes heating to 690-850 deg.C, maintaining for a certain period of time, and controlling the temperature at 500-620 deg.C.
The invention controls the growth of the semiconductor nanowire by realizing a gas-solid growth mode. The cadmium sulfoselenide semiconductor nano-belt obtained by the method is a single crystal material. As shown in fig. 2, the obtained nanowire/ribbon has the advantages of thin thickness, long length, controllable width, high crystal quality and high carrier mobility.
In a preferred embodiment, Au electrodes are prepared at two ends of the cadmium selenide sulfide semiconductor nanobelt through a photoetching process, and the thickness of an Au electrode film is 250nm-300 nm. As shown in fig. 3.
The semiconductor nano-wire plays an important role in electronic, photoelectronic and nano-electronic mechanical instruments, and can be used as an additive in other materials, a connecting wire in an integrated circuit, a field emission device and a nano sensor.
In another embodiment, a device comprises the one-dimensional cadmium sulfoselenide semiconductor nanowire prepared by the method.
In another embodiment, a photodetector includes, in order from bottom to top: the cadmium selenide sulfide nanowire array comprises a silicon dioxide substrate, metal electrodes on two sides and a one-dimensional cadmium selenide sulfide semiconductor nanowire, wherein the one-dimensional cadmium selenide sulfide semiconductor nanowire is the one-dimensional cadmium selenide sulfide semiconductor nanowire. The current of the photodetector varies with the bias voltage as shown in fig. 4. Has excellent performance.
In another embodiment, a method of fabricating a photodetector includes:
s11: depositing a metal catalyst film on a substrate;
s12: uniformly mixing cadmium sulfide and cadmium selenide in the presence of protective gas;
s13: heating the substrate in the step S11 and the mixed cadmium sulfide and cadmium selenide, obtaining the nanowire by a chemical vapor deposition method, and rapidly cooling to room temperature under protective gas flow;
s14: mechanically stripping the substrate of the one-dimensional cadmium selenide sulfide semiconductor nanowire to transfer the one-dimensional cadmium selenide sulfide semiconductor nanowire to SiO2A substrate;
s15: and preparing electrode films at two ends of the nanowire by a photoetching process.
In a preferred embodiment, the electrode thin film is gold, and the thickness of the electrode thin film is 250nm-300 nm.
The following is a detailed description of a specific example:
a method of fabricating a photodetector, comprising:
(1) depositing a 5nmPt film on a single crystal Si substrate through thermal evaporation, placing the prepared substrate in the middle of a downstream area of a tube furnace, and then placing a crucible containing semiconductor powder source materials in an upstream area of the tube furnace at a distance of 12cm from the substrate;
(2) vacuumizing the quartz tube until the air pressure is less than 2 x 10-3Torr, and introducing N2、Ar2Mixing protective gas for 0.5 hour with the mixing ratio of N2：Ar2= 6: 4, discharging residual air;
(3) keeping the flow rate of the protective gas unchanged, heating the CdS and CdSe mixed powder and the substrate to 690-850 ℃ evaporation source material, and then controlling the temperature range to 500-620 ℃ for continuous growth for 10-40 minutes; the mixing ratio of cadmium sulfide and cadmium selenide is CdS: CdSe = 3.7: 6.3;
(4) after the growth is finished, stopping heating, and rapidly cooling to room temperature under the protective air flow.
(5) Mechanically stripping the grown substrate, and transferring the nanoribbon to SiO2Preparing Au electrode on the substrate by photolithography, and forming a device structure comprising SiO2Substrate, CdSSe semiconductor nanowires/ribbons, gold electrodes.
It is to be understood that the above-described embodiments of the present invention are merely illustrative of or explaining the principles of the invention and are not to be construed as limiting the invention. Therefore, any modification, equivalent replacement, improvement and the like made without departing from the spirit and scope of the present invention should be included in the protection scope of the present invention. Further, it is intended that the appended claims cover all such variations and modifications as fall within the scope and boundaries of the appended claims or the equivalents of such scope and boundaries.

Claims (10)

1. A preparation method of a one-dimensional cadmium sulfoselenide semiconductor nanowire is characterized by comprising the following steps:
s01: depositing a metal catalyst film on a substrate;
s02: uniformly mixing cadmium sulfide and cadmium selenide in the presence of protective gas;
s03: and (4) heating the substrate obtained in the step (S01) and the mixed cadmium sulfide and cadmium selenide, and obtaining the one-dimensional nanowire by a chemical vapor deposition method.
2. The method for preparing one-dimensional cadmium sulfoselenide semiconductor nanowires of claim 1, wherein the metal catalyst thin film in step S01 is Ni, Cr, or Pt, and the thickness of the metal catalyst thin film is 5nm to 10 nm.
3. The method for preparing one-dimensional cadmium sulfoselenide semiconductor nanowires of claim 1, wherein the shielding gas of step S02 is N2And Ar2Mixed gas with the mixing ratio of N2：Ar2=6：4。
4. The method as claimed in claim 1, wherein the heating step in step S03 includes heating to 690-850 ℃ for a certain period of time, and controlling the temperature at 500-620 ℃.
5. The method for preparing a one-dimensional cadmium sulfoselenide semiconductor nanowire according to claim 1, wherein the mixing ratio of cadmium sulfide and cadmium selenide in the step S02 is CdS: CdSe = 3.7: 6.3.
6. a one-dimensional cadmium sulfoselenide semiconductor nanowire, characterized in that the one-dimensional cadmium sulfoselenide semiconductor nanowire is obtained by the preparation method of the one-dimensional cadmium sulfoselenide semiconductor nanowire according to any one of claims 1 to 5.
7. A device comprising the one-dimensional cadmium sulfoselenide semiconductor nanowire of claim 6.
8. A photoelectric detector is characterized by sequentially comprising from bottom to top: a silicon dioxide substrate, metal electrodes on two sides and a one-dimensional cadmium selenide sulfide semiconductor nanowire, wherein the one-dimensional cadmium selenide sulfide semiconductor nanowire is the one-dimensional cadmium selenide sulfide semiconductor nanowire of claim 6.
9. A method of fabricating a photodetector, comprising:
s11: depositing a metal catalyst film on a substrate;
s12: uniformly mixing cadmium sulfide and cadmium selenide in the presence of protective gas;
s13: heating the substrate in the step S11 and the mixed cadmium sulfide and cadmium selenide, obtaining the nanowire by a chemical vapor deposition method, and rapidly cooling to room temperature under protective gas flow;
s14: mechanically stripping the substrate of the one-dimensional cadmium selenide sulfide semiconductor nanowire to transfer the one-dimensional cadmium selenide sulfide semiconductor nanowire to SiO2A substrate;
s15: and preparing electrodes at two ends of the nanowire by a photoetching process.
10. The method of claim 9, wherein the electrode is gold, and the thickness of the electrode thin film is 250nm to 300 nm.
CN202110054151.5A 2021-01-15 2021-01-15 Preparation method of one-dimensional cadmium sulfoselenide semiconductor nanowire, nanowire and device Pending CN112899647A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110054151.5A CN112899647A (en) 2021-01-15 2021-01-15 Preparation method of one-dimensional cadmium sulfoselenide semiconductor nanowire, nanowire and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110054151.5A CN112899647A (en) 2021-01-15 2021-01-15 Preparation method of one-dimensional cadmium sulfoselenide semiconductor nanowire, nanowire and device

Publications (1)

Publication Number Publication Date
CN112899647A true CN112899647A (en) 2021-06-04

Family

ID=76113536

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110054151.5A Pending CN112899647A (en) 2021-01-15 2021-01-15 Preparation method of one-dimensional cadmium sulfoselenide semiconductor nanowire, nanowire and device

Country Status (1)

Country Link
CN (1) CN112899647A (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102577A (en) * 1981-12-14 1983-06-18 Canon Inc Manufacture of light conducting cdsse
CN103882514A (en) * 2014-02-28 2014-06-25 湖南大学 Semiconductor CdS/CdSSe heterojunction nanowire and preparation method thereof
CN110028047A (en) * 2018-01-12 2019-07-19 中国科学院理化技术研究所 The adjustable CdS of single-orientated and componentXSe1-xAlloy nanowire array and preparation method thereof
CN110156077A (en) * 2019-04-24 2019-08-23 华南师范大学 One-dimensional antimony sulfide-iodide semiconductor nanowires photodetector and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58102577A (en) * 1981-12-14 1983-06-18 Canon Inc Manufacture of light conducting cdsse
CN103882514A (en) * 2014-02-28 2014-06-25 湖南大学 Semiconductor CdS/CdSSe heterojunction nanowire and preparation method thereof
CN110028047A (en) * 2018-01-12 2019-07-19 中国科学院理化技术研究所 The adjustable CdS of single-orientated and componentXSe1-xAlloy nanowire array and preparation method thereof
CN110156077A (en) * 2019-04-24 2019-08-23 华南师范大学 One-dimensional antimony sulfide-iodide semiconductor nanowires photodetector and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ANLIAN PAN等: ""Color-Tunable Photoluminescence of Alloyed CdSxSe1-x Nanobelts"", 《JOURNAL OF THE AMERICAN CHEMICAL SOCIETY》 *

Similar Documents

Publication Publication Date Title
KR20090101617A (en) Method for manufacturing zinc oxide nanowires
KR101475524B1 (en) Nanowire comprising silicon rich oxide and method for producing the same
JP2007158119A (en) Electric element having nano wire and its manufacturing method, and electric element assembly
CN111146079B (en) Synthesis and application of two-dimensional metal-semiconductor Van der Waals heterojunction array
JP2008143771A (en) Method of forming oxide based nano structures
JP2012508682A (en) Single crystal germanium cobalt nanowire, germanium cobalt nanowire structure, and manufacturing method thereof
CN107287578A (en) A kind of chemical gas-phase deposition process for preparing of a wide range of uniform double-deck molybdenum disulfide film
JP5260881B2 (en) Mg-containing ZnO mixed crystal single crystal, laminated body thereof, and production method thereof
JP2010089249A (en) Branched nanowire and method for fabricatiing the same
CN109056057B (en) Preparation method of large-size single-crystal gallium oxide nanosheet
CN103531447B (en) A kind of method reducing defect density of gallium nitride nanowire array crystal
CN110980659A (en) Tungsten ditelluride grown by using new raw material and preparation method thereof
CN110112060A (en) A method of III-V race's semiconductor nanowires direction of growth of high-performance is controlled using gas-solid-solid growth pattern
CN110028047B (en) Mono-oriented and compositionally tunable CdSxSe1-xAlloy nanowire array and preparation method thereof
KR101538742B1 (en) Synthesis method for nanowires
CN112899647A (en) Preparation method of one-dimensional cadmium sulfoselenide semiconductor nanowire, nanowire and device
JP2009096700A (en) Method for producing zinc oxide fine wire in large quantity
CN109881246B (en) Preparation method of large-size single crystal beta-gallium oxide nanobelt
JP6597333B2 (en) Growth method of layered chalcogenide film
JP4304272B2 (en) Thermoelectric conversion material thin film, sensor element and manufacturing method thereof
CN109023296B (en) Method for growing molybdenum-tungsten-selenium alloy on fluorophlogopite substrate through chemical vapor deposition
KR20200133508A (en) Transition metal dichalcogenides thin film, method and apparatus for manufacturing the same
KR100943977B1 (en) Fabrication Method of Bismuth Single Crystalline Nanowire
JP4989101B2 (en) Method for manufacturing GeSn semiconductor device
KR101122129B1 (en) Method for preparing Si/SiOx core/shell nanowire by using Si-rich oxides

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20210604

RJ01 Rejection of invention patent application after publication