CN110980659A - Tungsten ditelluride grown by using new raw material and preparation method thereof - Google Patents
Tungsten ditelluride grown by using new raw material and preparation method thereof Download PDFInfo
- Publication number
- CN110980659A CN110980659A CN201911378633.5A CN201911378633A CN110980659A CN 110980659 A CN110980659 A CN 110980659A CN 201911378633 A CN201911378633 A CN 201911378633A CN 110980659 A CN110980659 A CN 110980659A
- Authority
- CN
- China
- Prior art keywords
- tungsten
- quartz tube
- silicon
- placing
- ditelluride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- WFGOJOJMWHVMAP-UHFFFAOYSA-N tungsten(iv) telluride Chemical compound [Te]=[W]=[Te] WFGOJOJMWHVMAP-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000002994 raw material Substances 0.000 title claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 34
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000010453 quartz Substances 0.000 claims abstract description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 12
- 239000010703 silicon Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 11
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910001930 tungsten oxide Inorganic materials 0.000 claims abstract description 10
- 239000000243 solution Substances 0.000 claims abstract description 9
- XMVONEAAOPAGAO-UHFFFAOYSA-N sodium tungstate Chemical compound [Na+].[Na+].[O-][W]([O-])(=O)=O XMVONEAAOPAGAO-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000007864 aqueous solution Substances 0.000 claims abstract description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 6
- 238000004528 spin coating Methods 0.000 claims abstract description 5
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 3
- 238000001704 evaporation Methods 0.000 claims abstract 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 5
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 239000007858 starting material Substances 0.000 claims 1
- 230000008569 process Effects 0.000 abstract description 4
- 239000007769 metal material Substances 0.000 abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- 230000007547 defect Effects 0.000 abstract description 2
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 239000012808 vapor phase Substances 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 229910052721 tungsten Inorganic materials 0.000 description 8
- 239000010937 tungsten Substances 0.000 description 8
- 229910052714 tellurium Inorganic materials 0.000 description 7
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- 229910052723 transition metal Inorganic materials 0.000 description 6
- -1 transition metal chalcogenide compound Chemical class 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- OFDISMSWWNOGFW-UHFFFAOYSA-N 1-(4-ethoxy-3-fluorophenyl)ethanamine Chemical compound CCOC1=CC=C(C(C)N)C=C1F OFDISMSWWNOGFW-UHFFFAOYSA-N 0.000 description 4
- 238000001237 Raman spectrum Methods 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 4
- 238000000879 optical micrograph Methods 0.000 description 4
- 238000004098 selected area electron diffraction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- HPQRSQFZILKRDH-UHFFFAOYSA-M chloro(trimethyl)plumbane Chemical compound C[Pb](C)(C)Cl HPQRSQFZILKRDH-UHFFFAOYSA-M 0.000 description 3
- 229910021389 graphene Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 235000006408 oxalic acid Nutrition 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 238000003746 solid phase reaction Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 2
- 229910021642 ultra pure water Inorganic materials 0.000 description 2
- 239000012498 ultrapure water Substances 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- QWMFKVNJIYNWII-UHFFFAOYSA-N 5-bromo-2-(2,5-dimethylpyrrol-1-yl)pyridine Chemical compound CC1=CC=C(C)N1C1=CC=C(Br)C=N1 QWMFKVNJIYNWII-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/007—Tellurides or selenides of metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention belongs to the technical field of non-magnetic semi-metal materials, and discloses a method for growing tungsten ditelluride by using a new raw material, which comprises the steps of spin-coating a sodium tungstate aqueous solution on a silicon dioxide sheet, evaporating the solution in the air to obtain a tungsten oxide film, and placing a silicon wafer containing the tungsten oxide film with the front side facing upwards; covering another silicon oxide wafer on the silicon wafer; placing two silicon chips clamped together at the closed end of a large quartz tube; placing tellurium powder at the closed end of a small quartz tube; inserting a small quartz tube into a large quartz tube; and placing the combined quartz tube in a chemical vapor deposition tube furnace, and growing the tungsten ditelluride layered material in a vapor phase. The raw material sodium tungstate or tungsten oxide is low in price, the growth process is short, the repeatability is high, the defects of high energy consumption and long time of the preparation method in the prior art are effectively overcome, and the preparation method has the advantages of simple required equipment and high popularization value.
Description
Technical Field
The invention belongs to the technical field of non-magnetic semi-metal materials, and particularly relates to a method for growing tungsten ditelluride by using a new raw material and a preparation method thereof.
Background
Currently, the closest prior art: tungsten ditelluride (WTE)2) The chalcogenide material is a transition metal chalcogenide compound with a layered structure, tungsten chains in orthogonal unit cells of the chalcogenide material are distributed in one dimension along the a-axis direction of a tellurium layer, and the chalcogenide material is a non-magnetic semi-metal material.
The methods for preparing tungsten ditelluride with different morphologies reported at present mainly comprise the following methods:
the mechanical lift-off method is the most basic method for obtaining tungsten ditelluride with few layers and even a single layer, but the method is difficult to obtain tungsten ditelluride with large area, and the method has limitation because the tungsten ditelluride is easy to degrade in air.
The solid phase reaction method is mainly used for preparing tungsten ditelluride single crystals, requires high temperature and high pressure, and has strict requirement on temperature gradient control during the solid phase reaction.
The chemical vapor transport method and the chemical vapor deposition method have small samples and long reaction time, generally require one to two weeks or even several months to grow tungsten ditelluride, mostly adopt tellurium tetrachloride as raw materials, are easy to mix with tellurium tetrachloride impurities, and subsequently need to be treated in purification and the like.
In summary, the problems of the prior art are as follows: (1) in the prior art for preparing tungsten ditelluride, the cost is high, the growth process is long, the repeatability is poor, and the required equipment in the preparation method is complex and the popularization is limited.
(2) In the prior art, the prepared tungsten ditelluride has poor crystallization property, low yield, difficult transfer and can not be produced in large batch.
The difficulty of solving the technical problems is as follows: two-dimensional transition metal chalcogenides have attracted attention because of their tunable bandgap characteristics (from zero to the visible region). Since graphene has no band gap, the two-dimensional transition metal chalcogenide can replace graphene in many applications, such as field effect transistors, photoelectric devices, integrated logic circuits, biological systems, humidity sensors, electrocatalytic hydrogen production, and the like.
It is well known that large-scale homogeneous semiconductor thin film materials are the cornerstone of future integrated electronic and optoelectronic applications. Although it is easier to prepare large-area high-quality graphene, it is still difficult to prepare large-area two-dimensional metal chalcogenide. The main reason for this is that the precursor is difficult to uniformly disperse on the substrate, so the sample size of the deposited two-dimensional transition metal chalcogenide is small. If the atomic layer deposition and the pulse laser deposition are adopted to prepare the precursor or the noble metal is used as the substrate, the two-dimensional transition metal chalcogenide with larger area, continuity and uniformity can be obtained, but the cost is high, the preparation process is complex, and the crystallinity of the obtained sample is not high. In addition to the above problems, the conventional synthesis technology of tungsten telluride, which is one of two-dimensional transition metal chalcogenide compounds, often uses tellurium tetrachloride as a raw material, and thus the obtained product is easily mixed with impurities of tellurium tetrachloride and has low crystallinity.
The significance of solving the technical problems is as follows: the invention adopts sodium tungstate aqueous solution as tungsten source, can make the tungsten source distribute on the substrate evenly by spin coating method, and has simple operation and low cost. When tungsten oxide is used as a tungsten source, the size of the single tungsten ditelluride film can be regulated and controlled by controlling the dosage of the tungsten oxide. The technology adopts tellurium powder as a tellurium source, and other impurities cannot be introduced.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a method for growing tungsten ditelluride by using a new raw material and a preparation method thereof.
The invention is realized in such a way that a preparation method for growing tungsten ditelluride by adopting a new raw material comprises the following steps:
step one, spin-coating sodium tungstate aqueous solution on a silicon chip, and heating in air to remove a solvent to obtain WO3Film of which WO is to be contained3The silicon-oxygen sheet of the film is placed with the right side facing upwards;
secondly, covering another silicon oxide sheet on the side cover of the silicon oxide sheet;
placing the two clamped silicon oxygen sheets at the closed end of the large quartz tube;
fourthly, placing the tellurium powder at the closed end of the small quartz tube;
inserting the opening end of the small quartz tube into the large quartz tube;
and sixthly, placing the combined quartz tube in a chemical vapor deposition tube furnace to grow the tungsten ditelluride layered material.
Further, in the second step, the other silicon wafer faces downwards.
Further, in step three, or directly using two silicon sheets to face each other and clamping WO3Powder, placed at the closed end of the large quartz tube.
Further, in the sixth step, the growth time is 30min, the growth temperature is 800 ℃, and the atmosphere is inert gas (high-purity nitrogen or argon).
The invention also aims to provide the tungsten ditelluride prepared by the preparation method for growing the tungsten ditelluride by adopting the new raw material.
In summary, the advantages and positive effects of the invention are: the invention provides a preparation method for growing tungsten ditelluride by adopting a new raw material, the raw material sodium tungstate or tungsten oxide is low in price, the growth process is short, the repeatability is high, the defects of high energy consumption and long time of the preparation method in the prior art are effectively overcome, and the preparation method has simple required equipment and higher popularization value.
As can be seen from the optical micrograph in FIG. 3(a), a tungsten ditelluride thin film having a large area was obtained, and FIG. 3(b) is a Raman spectrum (wavelength: 532nm) of the obtained thin film material, in which 109,117,134,165 and 214cm were observed-1The peaks of (a) correspond to characteristic peaks of two-dimensional tungsten telluride, respectively, indicating that the obtained material is indeed tungsten ditelluride.
From the TEM characterization results of fig. 4, it can be seen that the obtained tungsten ditelluride film has high crystallinity and uniform distribution of tungsten and tellurium elements.
The tungsten ditelluride prepared by the preparation method provided by the invention has good crystallinity, large yield and easy transfer, and provides theoretical reference for mass production of tungsten ditelluride.
Drawings
FIG. 1 is a flow chart of a preparation method for growing tungsten ditelluride by using a new raw material according to an embodiment of the invention.
FIG. 2 is a schematic diagram of the effect of growing tungsten ditelluride by chemical vapor deposition according to an embodiment of the present invention.
FIG. 3 is an optical micrograph and Raman spectrum of tungsten ditelluride (a) provided by an embodiment of the present invention.
Fig. 4 shows (a) TEM photographs, (b) high-resolution transmission electron microscope (HRTEM) photographs of tungsten ditelluride provided by an embodiment of the present invention, in which Selected Area Electron Diffraction (SAED) mode photographs are shown, and (c) and (d) mapping of (a) box portions of tungsten and tellurium elements.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In the prior art for preparing tungsten ditelluride, the cost is high, the growth process is long, the repeatability is poor, and the required equipment in the preparation method is complex and the popularization is limited. In the prior art, the prepared tungsten ditelluride has poor crystallization property, low yield, difficult transfer and can not be produced in large batch.
Aiming at the problems in the prior art, the invention provides a method for growing tungsten ditelluride by using a new raw material and a preparation method thereof, and the invention is described in detail by combining the attached drawings.
As shown in fig. 1 and fig. 2, the preparation method for growing tungsten ditelluride by using new raw materials provided by the embodiment of the invention comprises the following steps:
s101, 3.7g of sodium tungstate dihydrate powder is dissolved in 100mL of ultrapure water to obtain a clear and transparent solution for later use. Hydrochloric acid is added dropwise into the sodium tungstate aqueous solution while stirring to adjust the pH value to about 1. The solution was then aged for 24h to give a white flocculent precipitate. The precipitate was heated properly and redissolved in prepared oxalic acid solution (2.8g oxalic acid in 20mL ultrapure water), and finally the solution was diluted to 200mL to obtain clear and transparent tungstic acid colloidal solution.
S102, spin-coating the tungstic acid colloidal solution in the step S101 on a cleaned silicon dioxide Sheet (SiO)2on/Si) and then heating in air (120 ℃ C.) to remove the solvent to give WO3Film of which WO is to be contained3The silicon sheet of the film is placed with the right side up for standby.
S103, another silicon oxygen piece is covered on the upper side of the silicon oxygen piece (the front side faces downwards) in the step S102.
S104, and then placing the two sandwiched silicon wafers at the closed end of the larger quartz tube. Or directly using two silicon sheets with their front faces opposite to each other and sandwiching 0.1g of WO3Powder, placed at the closed end of a larger quartz tube.
S105, placing 0.1g of tellurium powder at the closed end of the smaller quartz tube.
And S106, inserting the opening end of the small quartz tube into the large quartz tube.
S107, finally, placing the combined quartz tube in a 1-inch chemical vapor deposition tube furnace, and growing a few-layer tungsten ditelluride film for 30min at the growth temperature of 800 ℃ in the atmosphere of inert gas (high-purity nitrogen or argon).
The tungsten source provided by the invention is sodium tungstate aqueous solution or tungsten oxide powder, the tellurium source is tellurium powder, the substrate is a silicon-oxygen sheet or a mica sheet, and the placement method and the position are shown in the schematic diagram of figure 2.
The invention is further described below in connection with specific experiments.
As can be seen from the optical micrograph in FIG. 3(a), a tungsten ditelluride thin film having a large area was obtained, and FIG. 3(b) is a Raman spectrum (wavelength: 532nm) of the obtained thin film material, in which 109,117,134,165 and 214cm were observed-1The peaks of (a) correspond to characteristic peaks of two-dimensional tungsten telluride, respectively, indicating that the obtained material is indeed tungsten ditelluride.
From the TEM characterization results of fig. 4, it can be seen that the obtained tungsten ditelluride film has high crystallinity and uniform distribution of tungsten and tellurium elements.
FIG. 3 is an optical micrograph and Raman spectrum of tungsten ditelluride (a) provided by an embodiment of the present invention.
Fig. 4 shows (a) TEM photographs, (b) high-resolution transmission electron microscope (HRTEM) photographs of tungsten ditelluride provided by an embodiment of the present invention, in which Selected Area Electron Diffraction (SAED) mode photographs are shown, and (c) and (d) mapping of (a) box portions of tungsten and tellurium elements.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (5)
1. A preparation method for growing tungsten ditelluride by using a new raw material is characterized by comprising the following steps:
step one, spin-coating a sodium tungstate aqueous solution on a silicon dioxide wafer, evaporating the solution in air to obtain a tungsten oxide film, and placing the silicon wafer containing the tungsten oxide film with the front side facing upwards;
covering another silicon-oxygen piece on the silicon chip;
placing the two silicon chips clamped together at the closed end of the large quartz tube;
fourthly, placing the tellurium powder at the closed end of the small quartz tube;
inserting the small quartz tube into the large quartz tube;
and sixthly, placing the combined quartz tube in a CVD tube, and growing the tungsten ditelluride layered material by a chemical vapor deposition method.
2. The method of claim 1, wherein in step two, the other silicon wafer is facing down.
3. The method of claim 1, wherein in step three, or directly using two silicon wafers with their front faces facing each other, the tungsten oxide powder is sandwiched and placed at the closed end of the large quartz tube.
4. The method according to claim 1, wherein in the sixth step, the growth time is 30min, the growth temperature is 800 ℃, and the atmosphere is inert gas (high purity nitrogen or argon).
5. A tungsten ditelluride produced by the method of claim 1 using a novel starting material for the production of tungsten ditelluride.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911378633.5A CN110980659A (en) | 2019-12-27 | 2019-12-27 | Tungsten ditelluride grown by using new raw material and preparation method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911378633.5A CN110980659A (en) | 2019-12-27 | 2019-12-27 | Tungsten ditelluride grown by using new raw material and preparation method thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110980659A true CN110980659A (en) | 2020-04-10 |
Family
ID=70078139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911378633.5A Pending CN110980659A (en) | 2019-12-27 | 2019-12-27 | Tungsten ditelluride grown by using new raw material and preparation method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110980659A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111437841A (en) * | 2020-05-15 | 2020-07-24 | 山西大学 | Tungsten telluride-tungsten boride heterojunction electrocatalyst and preparation method and application thereof |
CN111874876A (en) * | 2020-08-12 | 2020-11-03 | 湖北工业大学 | Method for growing copper telluride by adopting new raw material, copper telluride and application |
CN112938909A (en) * | 2021-03-29 | 2021-06-11 | 湘潭大学 | Preparation method of tungsten ditelluride nanoribbon |
CN113501505A (en) * | 2021-08-19 | 2021-10-15 | 河北大学 | Two-dimensional tungsten selenide nano material and preparation method thereof |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110262660A1 (en) * | 2010-04-22 | 2011-10-27 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition |
CN104218114A (en) * | 2014-08-28 | 2014-12-17 | 太原理工大学 | Two-dimensional heterojunction solar cell and manufacturing method thereof |
CN104894530A (en) * | 2015-06-09 | 2015-09-09 | 国家纳米科学中心 | Two-dimensional transition metal sulfur compound film and preparation method and application thereof |
CN109267036A (en) * | 2018-11-01 | 2019-01-25 | 西北大学 | A kind of preparation of two telluride tungsten nanowires material and two telluride tungsten nanowires materials |
CN110155959A (en) * | 2019-05-31 | 2019-08-23 | 西北工业大学 | The confinement chemical gas-phase deposition process for preparing of two-dimentional transition metal alloy chalcogenide |
-
2019
- 2019-12-27 CN CN201911378633.5A patent/CN110980659A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110262660A1 (en) * | 2010-04-22 | 2011-10-27 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Chalcogenide-containing precursors, methods of making, and methods of using the same for thin film deposition |
CN104218114A (en) * | 2014-08-28 | 2014-12-17 | 太原理工大学 | Two-dimensional heterojunction solar cell and manufacturing method thereof |
CN104894530A (en) * | 2015-06-09 | 2015-09-09 | 国家纳米科学中心 | Two-dimensional transition metal sulfur compound film and preparation method and application thereof |
CN109267036A (en) * | 2018-11-01 | 2019-01-25 | 西北大学 | A kind of preparation of two telluride tungsten nanowires material and two telluride tungsten nanowires materials |
CN110155959A (en) * | 2019-05-31 | 2019-08-23 | 西北工业大学 | The confinement chemical gas-phase deposition process for preparing of two-dimentional transition metal alloy chalcogenide |
Non-Patent Citations (3)
Title |
---|
N.KAISER: "《光学干涉薄膜》", 31 August 2008, 浙江大学出版社 * |
王箴: "《化工辞典 第2版》", 30 April 1985 * |
黄克靖 等: "《二维过渡金属二硫属化合物的电化学储能应用》", 30 September 2018 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111437841A (en) * | 2020-05-15 | 2020-07-24 | 山西大学 | Tungsten telluride-tungsten boride heterojunction electrocatalyst and preparation method and application thereof |
CN111437841B (en) * | 2020-05-15 | 2023-03-24 | 山西大学 | Tungsten telluride-tungsten boride heterojunction electrocatalyst and preparation method and application thereof |
CN111874876A (en) * | 2020-08-12 | 2020-11-03 | 湖北工业大学 | Method for growing copper telluride by adopting new raw material, copper telluride and application |
CN111874876B (en) * | 2020-08-12 | 2022-02-22 | 湖北工业大学 | Method for growing copper telluride, copper telluride and application |
CN112938909A (en) * | 2021-03-29 | 2021-06-11 | 湘潭大学 | Preparation method of tungsten ditelluride nanoribbon |
CN113501505A (en) * | 2021-08-19 | 2021-10-15 | 河北大学 | Two-dimensional tungsten selenide nano material and preparation method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110980659A (en) | Tungsten ditelluride grown by using new raw material and preparation method thereof | |
Galazka | β-Ga2O3 for wide-bandgap electronics and optoelectronics | |
Wang et al. | Controlled growth of atomically thin transition metal dichalcogenides via chemical vapor deposition method | |
CN105624782B (en) | A kind of preparation method of gallium oxide film | |
CN110416065B (en) | Preparation method of molybdenum disulfide/tungsten diselenide vertical heterojunction | |
CN112359421B (en) | Method for preparing layered bismuth-oxygen-selenium semiconductor film by reverse airflow method | |
CN107287578B (en) | A kind of chemical gas-phase deposition process for preparing of a wide range of uniformly double-deck molybdenum disulfide film | |
CN110055591B (en) | Preparation method of two-dimensional ternary atomic crystal | |
CN111146079B (en) | Synthesis and application of two-dimensional metal-semiconductor Van der Waals heterojunction array | |
US20170051400A1 (en) | Method for manufacturing a doped metal chalcogenide thin film, and same thin film | |
CN109437124B (en) | Method for synthesizing single-layer transition metal chalcogenide | |
CN112695381A (en) | Method for rapidly growing ultrathin large-size single crystal transition metal sulfur/selenide | |
CN103531447A (en) | Method for reducing defect density of gallium nitride nanowire array crystal | |
CN107119319B (en) | Cuprous iodide two-dimensional material, preparation and application thereof | |
CN113668053B (en) | Black phosphorus film reaction device and black phosphorus film preparation method | |
EP0241204B1 (en) | Method for forming crystalline deposited film | |
CN117127256A (en) | Bismuth-based oxygen selenide and method for growing bismuth-based oxygen selenide by chemical vapor deposition and application of bismuth-based oxygen selenide | |
CN115341273B (en) | Preparation of large-size two-dimensional thermoelectric material bismuth telluride single crystal | |
CN113186590A (en) | Preparation method of centimeter-level molybdenum trioxide single crystal | |
Wong | Chemical vapor deposition growth of 2D semiconductors | |
CN113755820A (en) | Large-area single-layer semiconductor two-dimensional WS2Thin film material and preparation method and application thereof | |
CN109023296A (en) | A method of the chemical vapor deposition growth molybdenum tungsten selenium alloy on fluorophologopite substrate | |
US20240003051A1 (en) | New transparent conductive oxide thin film and use thereof | |
US20110024742A1 (en) | PROCESS FOR PRODUCING ZnO SINGLE CRYSTAL, SELF-SUPPORTING ZnO SINGLE-CRYSTAL WAFER OBTAINED BY THE SAME, SELF-SUPPORTING WAFER OF Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, AND PROCESS FOR PRODUCING Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL FOR USE IN THE SAME | |
CN114686845B (en) | GaS film and preparation method and application thereof |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200410 |
|
RJ01 | Rejection of invention patent application after publication |