JPS58102577A - Manufacture of light conducting cdsse - Google Patents
Manufacture of light conducting cdsseInfo
- Publication number
- JPS58102577A JPS58102577A JP56201125A JP20112581A JPS58102577A JP S58102577 A JPS58102577 A JP S58102577A JP 56201125 A JP56201125 A JP 56201125A JP 20112581 A JP20112581 A JP 20112581A JP S58102577 A JPS58102577 A JP S58102577A
- Authority
- JP
- Japan
- Prior art keywords
- 1mol
- heat treatment
- sulfur
- mixed
- salt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 5
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 150000003839 salts Chemical class 0.000 claims abstract description 5
- 229910052717 sulfur Inorganic materials 0.000 abstract description 9
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract description 7
- 239000011593 sulfur Substances 0.000 abstract description 7
- 229940065287 selenium compound Drugs 0.000 abstract description 5
- 150000003343 selenium compounds Chemical class 0.000 abstract description 5
- 150000001661 cadmium Chemical class 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 239000006104 solid solution Substances 0.000 abstract description 4
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 abstract description 4
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000203 mixture Substances 0.000 abstract description 2
- 229910052711 selenium Inorganic materials 0.000 abstract description 2
- 239000011669 selenium Substances 0.000 abstract description 2
- 150000003346 selenoethers Chemical class 0.000 abstract description 2
- 229910052979 sodium sulfide Inorganic materials 0.000 abstract description 2
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 abstract description 2
- YKYOUMDCQGMQQO-UHFFFAOYSA-L cadmium dichloride Chemical compound Cl[Cd]Cl YKYOUMDCQGMQQO-UHFFFAOYSA-L 0.000 abstract 2
- -1 sulfur Chemical class 0.000 abstract 2
- 229910021592 Copper(II) chloride Inorganic materials 0.000 abstract 1
- 230000003213 activating effect Effects 0.000 abstract 1
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 abstract 1
- 229910000369 cadmium(II) sulfate Inorganic materials 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- IYKVLICPFCEZOF-UHFFFAOYSA-N selenourea Chemical compound NC(N)=[Se] IYKVLICPFCEZOF-UHFFFAOYSA-N 0.000 abstract 1
- VPQBLCVGUWPDHV-UHFFFAOYSA-N sodium selenide Chemical compound [Na+].[Na+].[Se-2] VPQBLCVGUWPDHV-UHFFFAOYSA-N 0.000 abstract 1
- AKHNMLFCWUSKQB-UHFFFAOYSA-L sodium thiosulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=S AKHNMLFCWUSKQB-UHFFFAOYSA-L 0.000 abstract 1
- 235000019345 sodium thiosulphate Nutrition 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 101100220616 Caenorhabditis elegans chk-2 gene Proteins 0.000 description 1
- 101100136092 Drosophila melanogaster peng gene Proteins 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 101100008639 Mus musculus Cd55 gene Proteins 0.000 description 1
- 241001125046 Sardina pilchardus Species 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- BNOODXBBXFZASF-UHFFFAOYSA-N [Na].[S] Chemical compound [Na].[S] BNOODXBBXFZASF-UHFFFAOYSA-N 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 235000019512 sardine Nutrition 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003464 sulfur compounds Chemical class 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本尭ｔｍｒｉ光尋電性ＯＣｄ８８・−一体の製造方法に
関する４ので、譬に、非常ｒｃ均一な固溶体の小さ％Ａ
舷）−爵体尉末の脂造方法に、ＣｄＢ粉末とＣｄ８・粉
末を一機量１合し、５００″０以上の電層でＩＩｈｍ麿
するなどの方法が一般的であう九が、ＣｄＢ、・８＠ｌ
−１ぜる完全に均一な一癖体１＊ることは廟しく、Ｃｄ
８戒ｉは、ＣｄＢ・が単体で存在する部分のある不均一
な一癖体となって、充分な感度が得られな１０
本竜＠Ｏｔｉ的は、Ｃｄ８ｘ８ｅｔ−ｘの均一１に一爵
体ｏｓｍ造方法、を提供するものでるる０本発明による
ＣｄａＳｅの製造方＠は、カドきラム塩、イオウを含む
化合物およびセレン化＊０混合物を焼成することを特徴
とするものである０即ち、本発明による製造方法は、Ｃ
ｄ５ｔ）４゜ＣｄＣ／、勢のカドミウム塩に、チオ憾戚
ナトリク’ （Ｎａｇ ８ｓ Ｕｓ ）、硫化ナトリウ
ムＬ Ｎａ、Ｓ ）、チオ尿素（（鵬）Ｉｃｓ ）等の
イオウを含む化合物および、セレン化ナトリウム（Ｎａ
ｐ Ｂ・）、セレノフレア（（ＮＨ，）、ＣＢ・）等Ｏ
セレン化合−を島合し、通常５００℃以上のｆｆｌ嵐で
熱錫埋するものであるＯ不軸明により製造されるＣｄＳ
ｘ８・１−Ｘ園鋳体は、Ｘ＊マイクロアナライず−によ
る足性分析によれば、ＣＩＳあるいはＣｄ８・単体によ
るピークｒｉ観察されず、均一なｃａｓ！ｓ・１−！の
崗湿体となっていることが鰯められる０
不発＠に使用するカドオウム塩としては、Ｃｄ８偽、
Ｃｄ５ｔ＊、 Ｃｄ００ｍ等がるり、混合するイオウ化
合物、セレン化合物は、＾温で、イオク虞いはセレンを
融−するよう１１１１１述しえ様な化合智である。DETAILED DESCRIPTION OF THE INVENTION This book relates to the manufacturing method of TMR photosensitive OCd88-integrated OCd88, so for example, a small %A of highly rc homogeneous solid solution.
The most common method is to combine CdB powder and Cd8 powder and heat them with a conductive layer of 500" or more.・8@l
-It is a majestic thing to have a completely uniform body, Cd
The 8th precept is a non-uniform body with parts where CdB exists alone, and sufficient sensitivity cannot be obtained. The method for producing CdaSe according to the present invention is characterized by firing a mixture of cadmium salt, a sulfur-containing compound, and selenization. The manufacturing method according to the present invention includes C
d5t) 4゜CdC/, cadmium salts containing sulfur, such as sulfur sodium (Nag8sUs), sodium sulfide (LNa,S), thiourea ((Peng)Ics), and selenide. Sodium (Na
p B・), selenoflare ((NH,), CB・), etc.O
CdS produced by O-axis-free method, which is a method of assembling selenium compounds and embedding them in hot tin using an ffl storm, usually at temperatures of 500°C or higher.
According to foot analysis using X*Microanalyzer, the x8・1-X Sono casting showed that no peak ri due to CIS or Cd8 alone was observed, and a uniform cas! s・1-! It can be seen that the Cadium salt used for misexplosion is Cd8 false, Cd8 false,
Cd5t*, Cd00m, etc., are compound intellects that can be described in such a way that the sulfur compounds and selenium compounds that are mixed with each other melt the sulfur and selenium at ^ temperature.
Ｃｄ塩に対して添加するイオウおよびセレン化合物の量
はＣｄ １モルに対して、Ｓおよび８・の合計が１モル
となる様に加えれば１モルのＣｄＪｉｉｚ８＠、−エが
得られる。If the amounts of sulfur and selenium compounds added to the Cd salt are such that the total of S and 8. is 1 mol per 1 mol of Cd, 1 mol of CdJiiz8@,-E can be obtained.
付＃ｉ鰯としてのＣｕｔ尋人する緑は、ＣｕＣ／、等を
必畳量熱処ｌｉ１時に混入してやればよい。For the green sardine to be cut, CuC/, etc. may be mixed in at the time of heat treatment.
また、−ｉｌ［ｉ！ｉ目のｌＩ＆Ｊ＆塩後再［４００〜
４５０℃の＠度でｍＪ６ｍする１機を尋人することは、
結晶性會向上させる上でさらに有効である。Also, -il[i! i-th lI&J&salt re[400~
To test one aircraft with mJ6m at 450 degrees Celsius is,
It is further effective in improving crystallinity.
重置＠ＶＣおける＃ｉ＆鵡塩地場は、５００℃以上６６
０℃未満が好ましい０
４１１．５１ （０，５モル）、さらに付活剤としての
ＣｕＣ／、會２ Ｇ ｍｌ添加し、Ｖ字証混合機により
１Ｇ分闘１脅した。これらｋｂ英展ルツボに光てんし、
同じくすシ合わせの石英製７メをし、６００℃で６０分
間熱熱環境た。さらに残留する不純物をとるために十分
洗浄した後７０υで２０ ｈｒ乾燥し、Ｃｄ５ｚＳ＠ｔ
ｘの固醗体を得た０こ０ＣｄＳｘ８．１−、ｏ同溶体
ｔ−Ｘ巌マイクロアナ２イザーで分析し九ところ、Ｃｄ
Ｓ単体、あるいは、Ｃｄ’ｓ単体によるピークは誌めら
れず、このｍｓ体が不均一なものでないことがわかった
。一方、ＣｄＳ １モル、ｅｄＳｅ １モルｅ同ｇｏ方
法で６００℃島処理した結果得られたＣｄ５５ａ ｔ
ＦＪ様に分析し友ところ、ＣｄＳおよびＣｄＳｅに和尚
する小さなビークが見られ、この物質が完全に均一なＣ
詔工Ｓ０．−１ではないことが−められ九。#i & mushioji in superposition @ VC is 500℃ or more 66
0.411.51 (0.5 mol), preferably less than 0° C., was further added with 2 G ml of CuC as an activator, and mixed to 1 G with a V-shaped mixer. Shining light on these kb Hideten crucibles,
Seven quartz plates made of the same material were placed in a thermal environment at 600°C for 60 minutes. Furthermore, after thorough washing to remove remaining impurities, it was dried at 70υ for 20 hours, and Cd5zS@t
The obtained solid solid of
No peaks due to S alone or Cd's alone were observed, indicating that this ms body is not heterogeneous. On the other hand, Cd55a t obtained as a result of island treatment at 600°C using the same method as CdS 1 mol and edSe 1 mol.
FJ's analysis showed that small peaks were observed in CdS and CdSe, indicating that this material was completely homogeneous CdS and CdSe.
Edict S0. -I am surprised that it is not 1.
（実Ｊｉｔｆｉ２）
ＣｄＣ／ｆｆ１１００ ＃ ４！：、ＣｄＣ１，ｔｉｃ
対して、Ｑ、ｇモＨのＮａ、 Ｓ、０．および０．２モ
ルのＮａｚＳｅ を加え、さらＶこＣｕＣ１，ｔ Ｉ
Ｘ １Ｇ−” 七ル麟加し、全ｍｔｖ＊ａｉａ合機で１
０分間混合した。これらを石英ルツボに充てんし、６０
０℃で６０分間熱地壇し、以嶽夾′１／ＩＡ例１と同様
の地場により固溶体を得九。この同溶体をボールミルで
４８ｈｒ＠砕し、再び石 ”英ルツボに充てんし、
５００℃の温度で再ＭＭ場し固溶体を得た。この物質を
、Ｘ−マイクロアナ２イザーによる分析では、ＣｄＳお
よびＣｄＳｅは単体での存在ｒｉ認められなかった。(Actual Jitfi2) CdC/ff1100 #4! :,CdC1,tic
On the other hand, Q, gmoH Na, S, 0. and 0.2 mol of NazSe and further
X 1G-” Seven points added, 1 in all mtv*aia combinations
Mixed for 0 minutes. Fill these into a quartz crucible and
A solid solution was obtained by incubating at 0° C. for 60 minutes and incubating in the same manner as in Example 1/IA. This same solution was crushed in a ball mill for 48 hours and then filled into a stone crucible again.
A solid solution was obtained by performing MM field again at a temperature of 500°C. When this substance was analyzed using an X-microanalyzer, the existence of CdS and CdSe alone was not observed.
出願人 キャノン休式会社Applicant: Canon Closed Company
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56201125A JPS58102577A (en) | 1981-12-14 | 1981-12-14 | Manufacture of light conducting cdsse |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56201125A JPS58102577A (en) | 1981-12-14 | 1981-12-14 | Manufacture of light conducting cdsse |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58102577A true JPS58102577A (en) | 1983-06-18 |
Family
ID=16435821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56201125A Pending JPS58102577A (en) | 1981-12-14 | 1981-12-14 | Manufacture of light conducting cdsse |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58102577A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5362417A (en) * | 1992-07-09 | 1994-11-08 | Xerox Corporation | Method of preparing a stable colloid of submicron particles |
| US5567564A (en) * | 1992-07-09 | 1996-10-22 | Xerox Corporation | Liquid development composition having a colorant comprising a stable dispersion of magnetic particles in an aqueous medium |
| CN105838112A (en) * | 2016-03-28 | 2016-08-10 | 四川大学 | Chromium-doped temperature-resistant cadmium sulfoselenide bright red pigment and preparation method thereof |
| CN112899647A (en) * | 2021-01-15 | 2021-06-04 | 中国兵器工业集团第二一四研究所苏州研发中心 | Preparation method of one-dimensional cadmium sulfoselenide semiconductor nanowire, nanowire and device |
-
1981
- 1981-12-14 JP JP56201125A patent/JPS58102577A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5362417A (en) * | 1992-07-09 | 1994-11-08 | Xerox Corporation | Method of preparing a stable colloid of submicron particles |
| US5567564A (en) * | 1992-07-09 | 1996-10-22 | Xerox Corporation | Liquid development composition having a colorant comprising a stable dispersion of magnetic particles in an aqueous medium |
| US5578245A (en) * | 1992-07-09 | 1996-11-26 | Xerox Corporation | Method of preparing a stable colloid of submicron particles |
| US5670078A (en) * | 1992-07-09 | 1997-09-23 | Xerox Corporation | Magnetic and nonmagnetic particles and fluid, methods of making and methods of using the same |
| US5858595A (en) * | 1992-07-09 | 1999-01-12 | Xerox Corporation | Magnetic toner and ink jet compositions |
| CN105838112A (en) * | 2016-03-28 | 2016-08-10 | 四川大学 | Chromium-doped temperature-resistant cadmium sulfoselenide bright red pigment and preparation method thereof |
| CN112899647A (en) * | 2021-01-15 | 2021-06-04 | 中国兵器工业集团第二一四研究所苏州研发中心 | Preparation method of one-dimensional cadmium sulfoselenide semiconductor nanowire, nanowire and device |
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