CN112885732A - Multi-environment contrast type Micro LED epitaxial wafer defect measuring method - Google Patents
Multi-environment contrast type Micro LED epitaxial wafer defect measuring method Download PDFInfo
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- CN112885732A CN112885732A CN202110229725.8A CN202110229725A CN112885732A CN 112885732 A CN112885732 A CN 112885732A CN 202110229725 A CN202110229725 A CN 202110229725A CN 112885732 A CN112885732 A CN 112885732A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/24—Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
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Abstract
The invention discloses a multi-environment contrast type Micro LED epitaxial wafer defect measuring method, which comprises the following steps: the method comprises the following steps: carrying raw materials, carrying the Micro LED epitaxial wafer fixing jig through the conveying device, and carrying out the step two: setting a control variable, carrying out contrast measurement on the same Micro LED epitaxial wafer through two sets of temperature adjusting boxes, humidity adjusting boxes and gas adjusting boxes, conveniently obtaining the measurement effect under different environments, and carrying out step three: measuring the defect condition under the change state, observing the change condition of the external defect of the Micro LED epitaxial wafer under the change of air components in real time through a defect detector, and carrying out the fourth step: and (4) carrying out turn-over detection, taking down the Micro LED epitaxial wafer after one side is detected, turning over and fixing, and ensuring the integral detection effect. The multi-environment contrast type Micro LED epitaxial wafer flaw measurement method can detect flaw changes of normal environments and different environments, guarantees that the whole body does not generate large changes in the using process, and guarantees good forming effect of the whole body.
Description
Technical Field
The invention relates to the technical field of LED epitaxial wafers, in particular to a multi-environment contrast type Micro LED epitaxial wafer defect measuring method.
Background
The LED epitaxial wafer is a substrate which is heated to a proper temperature, the material is a cornerstone developed by the semiconductor lighting industry technology, different substrate materials need different LED epitaxial wafer growth technologies, chip processing technologies and device packaging technologies, the substrate materials determine the development route of the semiconductor lighting technology, and the basic principle of the LED epitaxial wafer growth is as follows: on a substrate (mainly sapphire, SiC and Si) heated to a proper temperature, gaseous InGaAlP is controllably delivered to the surface of the substrate, and a specific single crystal thin film is grown. At present, the LED epitaxial wafer growth technology mainly adopts an organic metal chemical vapor deposition method, the LED epitaxial wafer substrate material is a cornerstone for the technical development of the semiconductor illumination industry, different substrate materials need different LED epitaxial wafer growth technologies, chip processing technologies and device packaging technologies, and the substrate materials determine the development route of the semiconductor illumination technology.
The method for measuring the defects of the Micro LED epitaxial wafer is inconvenient to fully detect the epitaxial wafers in different environments, the accuracy of overall detection is reduced, and the defect measuring process cannot carry out contrastive analysis on the epitaxial wafers in different environments, so that the influence of the environment on the defects of the epitaxial wafers cannot be observed, the defects cannot be found in time, the overall defect measuring effect is poor, and the overall practicability is reduced.
Disclosure of Invention
The invention aims to provide a multi-environment contrast type Micro LED epitaxial wafer defect measuring method, and aims to solve the problems that epitaxial wafer defect measuring methods in the background technology are inconvenient to fully detect epitaxial wafers in different environments, the overall detection accuracy is reduced, the influence quantity of the environment on the epitaxial wafer defects cannot be observed, the defects cannot be found in time, and the overall defect measuring effect is poor.
In order to achieve the purpose, the invention provides the following technical scheme: a multi-environment contrast type Micro LED epitaxial wafer defect measuring method comprises the following steps:
the method comprises the following steps: carry raw and other materials, through LED epitaxial wafer processingequipment with Micro LED epitaxial wafer machine-shaping, place the Micro LED epitaxial wafer inside fixed tool after that to carry the fixed tool of Micro LED epitaxial wafer through conveyor, guarantee that the fixed tool of Micro LED epitaxial wafer can carry out abundant reciprocating motion inside detection device, thereby detect the apparent flaw of Micro LED epitaxial wafer.
Step two: set up the control variable, through setting up the temperature regulation box, humidity control box and gaseous regulation box, and at the temperature regulation box, the inside flaw detector that is provided with of humidity control box and gaseous regulation box, place Micro LED epitaxial wafer at fixed tool and carry respectively to the temperature regulation box through conveyor, humidity control box and gaseous regulation box measure, and through setting up two sets of temperature regulation boxes, humidity control box and gaseous regulation box carry out the contrast measurement to the same Micro LED epitaxial wafer, conveniently reachs the measuring effect under the different environment.
Step three: measuring the defect condition in a changing state, adjusting the conditions in a temperature adjusting box body, a humidity adjusting box body and a gas adjusting box body so as to conveniently and integrally detect the defect condition under the continuous change of the external environment of the Micro LED epitaxial wafer, heating up to 80 ℃ through two degrees of temperature per minute in the temperature adjusting process, observing the change condition of the external defect of the Micro LED epitaxial wafer under the temperature change in real time through a defect detector, humidifying the whole body continuously in the humidity adjusting process until the humidity is 70 percent, observing the change condition of the external defect of the Micro LED epitaxial wafer under the humidity change in real time through the defect detector, adjusting the internal air content, continuously filling oxygen or other gases into the box body to change the internal air content of the whole body, and the change condition of the external defect of the Micro LED epitaxial wafer under the change of the air component is observed in real time through a defect detector.
Step four: carry out the turn-over and detect, take off Micro LED epitaxial wafer and turn-over after finishing detecting one side and fix to convenient whole turn-over that carries out detects, transfers the variable in temperature regulation box, humidity control box and the gaseous regulation box to the invariant after that, detects under the normal environment and the variable changes the external flaw condition of Micro LED epitaxial wafer under the environment, guarantees holistic detection effect.
Preferably, the Micro LED epitaxial wafer provided in the step one is matched with the Micro LED epitaxial wafer fixing jig in shape and size, and the LED epitaxial wafer fixing jig and the movable end of the conveying device have a relatively fixed structure.
Preferably, the length and the width of the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body in the second step are the same, and the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body are all of internal flaw detector structures.
Preferably, in the second step, the defect detector inside the temperature adjustment box has a high temperature resistant structure, the defect detector inside the humidity adjustment box has a moisture-proof structure, and the defect detector inside the gas adjustment box has an anti-corrosion structure.
Preferably, the temperature adjusting box, the humidity adjusting box and the gas adjusting box in the second step are all structures with observation windows inside, and the specifications of flaw detectors inside the temperature adjusting box, the humidity adjusting box and the gas adjusting box are consistent.
Preferably, the temperature of the temperature regulating box body in the third step is 5-85 ℃, the temperature rising speed in the temperature regulating box body is three specifications of 2 degrees/minute, 3 degrees/minute and 5 degrees/minute, and the shell of the temperature regulating box body is made of heat insulating materials.
Preferably, an anti-fogging device is arranged inside the humidity adjusting box in the third step, and the flaw detector lens inside the humidity adjusting box is an anti-fogging lens.
Preferably, the gas regulating box body is made of a sealing material, and the filling gas of the gas regulating box body is of a replaceable structure.
Compared with the prior art, the invention has the beneficial effects that: the multi-environment-contrast type Micro LED epitaxial wafer defect measuring method adjusts the detection environment of the Micro LED epitaxial wafer through the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body, thereby being convenient for the whole body to detect the appearance defects of the Micro LED epitaxial wafer under different environments, simultaneously being capable of detecting the defect change under normal environment and different environments, ensuring that the whole body does not generate larger change in the using process and ensuring the good forming effect of the whole body, simultaneously controlling the variables inside the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body to ensure that the whole body can change the Micro LED epitaxial wafer under the fast changing environment, ensuring the good forming effect of the whole body, preventing the whole body from generating defects in the using process and being capable of previewing the defect conditions which possibly occur in the using process, the whole good detection is ensured, and the whole practicability is increased.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a technical scheme that: a multi-environment contrast type Micro LED epitaxial wafer defect measuring method comprises the following steps:
the method comprises the following steps: carry raw and other materials, through LED epitaxial wafer processingequipment with Micro LED epitaxial wafer machine-shaping, place the Micro LED epitaxial wafer inside fixed tool after that to carry the fixed tool of Micro LED epitaxial wafer through conveyor, guarantee that the fixed tool of Micro LED epitaxial wafer can carry out abundant reciprocating motion inside detection device, thereby detect the apparent flaw of Micro LED epitaxial wafer.
Step two: set up the control variable, through setting up the temperature regulation box, humidity control box and gaseous regulation box, and at the temperature regulation box, the inside flaw detector that is provided with of humidity control box and gaseous regulation box, place Micro LED epitaxial wafer at fixed tool and carry respectively to the temperature regulation box through conveyor, humidity control box and gaseous regulation box measure, and through setting up two sets of temperature regulation boxes, humidity control box and gaseous regulation box carry out the contrast measurement to the same Micro LED epitaxial wafer, conveniently reachs the measuring effect under the different environment.
Step three: measuring the defect condition in a changing state, adjusting the conditions in a temperature adjusting box body, a humidity adjusting box body and a gas adjusting box body so as to conveniently and integrally detect the defect condition under the continuous change of the external environment of the Micro LED epitaxial wafer, heating up to 80 ℃ through two degrees of temperature per minute in the temperature adjusting process, observing the change condition of the external defect of the Micro LED epitaxial wafer under the temperature change in real time through a defect detector, humidifying the whole body continuously in the humidity adjusting process until the humidity is 70 percent, observing the change condition of the external defect of the Micro LED epitaxial wafer under the humidity change in real time through the defect detector, adjusting the internal air content, continuously filling oxygen or other gases into the box body to change the internal air content of the whole body, and the change condition of the external defect of the Micro LED epitaxial wafer under the change of the air component is observed in real time through a defect detector.
Step four: carry out the turn-over and detect, take off Micro LED epitaxial wafer and turn-over after finishing detecting one side and fix to convenient whole turn-over that carries out detects, transfers the variable in temperature regulation box, humidity control box and the gaseous regulation box to the invariant after that, detects under the normal environment and the variable changes the external flaw condition of Micro LED epitaxial wafer under the environment, guarantees holistic detection effect.
Further, the Micro LED epitaxial wafer and the Micro LED epitaxial wafer fixing jig provided in the step one are adaptive to each other in shape and size, the LED epitaxial wafer fixing jig and the movable end of the conveying device are of a relatively fixed structure, the LED epitaxial wafer fixing jig and the movable end of the conveying device are conveniently fixed integrally, the Micro LED epitaxial wafer is conveniently and integrally detected in a movable mode, and the overall good detection effect is guaranteed.
Further, the length and width of the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body in the step two are the same, the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body are of internal flaw detector structures, and the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body can adjust the environmental variables, so that the whole body can be conveniently detected in different environments, and the whole good detection effect is guaranteed.
Further, the flaw detector inside the temperature adjusting box in the second step has a high temperature resistant structure, the flaw detector inside the humidity adjusting box has a moisture-proof structure, the flaw detector inside the gas adjusting box has an anti-corrosion structure, the flaw detector can be used for detecting in different environments, and the service life of the whole flaw detector is prolonged.
Further, the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body in the step two are of an internal observation window structure, specifications of flaw detectors inside the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body are consistent, the internal conditions are conveniently observed integrally, the integral good detection effect is guaranteed, and the overall practicability is improved.
Furthermore, the temperature of the temperature adjusting box body in the third step is 5-85 ℃, the rising speed of the temperature in the temperature adjusting box body is three specifications of 2 degrees/minute, 3 degrees/minute and 5 degrees/minute, and the shell of the temperature adjusting box body is made of heat-insulating materials, so that the temperature of the temperature adjusting box body is conveniently raised integrally, and the heat variable is conveniently adjusted.
Further, the anti-fogging device is arranged inside the humidity adjusting box in the third step, and the flaw detector lens inside the humidity adjusting box is an anti-fogging lens, so that the whole humidity adjusting box can be observed conveniently, and the whole good detection effect can be ensured.
Further, gaseous regulation box is sealed material, and the gas filled of gaseous regulation box be removable structure, and convenient whole internal gas constitutes to adjust, and convenient whole detects under different environment, has increased whole practicality.
According to the invention, firstly, a Micro LED epitaxial wafer is processed and molded through an LED epitaxial wafer processing device, then the Micro LED epitaxial wafer is placed in a fixed jig, the Micro LED epitaxial wafer fixed jig is conveyed through a conveying device, the Micro LED epitaxial wafer fixed jig can be guaranteed to be capable of moving back and forth fully in a detection device, so that flaws on the outer surface of the Micro LED epitaxial wafer are detected, the LED epitaxial wafer fixed jig is fixed with the movable end of the conveying device, the Micro LED epitaxial wafer is convenient to integrally detect in a movable mode, the Micro LED epitaxial wafer is convenient to adjust in a temperature adjusting box body, a humidity adjusting box body and a gas adjusting box body, flaw detectors are arranged in the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body, and the Micro LED epitaxial wafer is placed in the fixed jig through the conveying device and is respectively conveyed to the temperature adjusting box body, The humidity adjusting box body and the gas adjusting box body are used for measuring, two groups of temperature adjusting box bodies, the humidity adjusting box body and the gas adjusting box body are arranged to carry out contrast measurement on the same Micro LED epitaxial wafer, so that the measurement effects under different environments can be conveniently obtained, then the internal conditions of the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body are adjusted, so that the defect condition of the Micro LED epitaxial wafer under the continuous change of the external environment can be conveniently and integrally detected, in the process of temperature adjustment, the temperature is increased through the temperature with the speed of 2 degrees/minute, 3 degrees/minute or 5 degrees/minute until the temperature is increased to 80 degrees, in the process of temperature adjustment, the change condition of the external defect of the Micro LED epitaxial wafer under the temperature change is observed in real time through a defect detector, in the process of humidity adjustment, the internal part of the whole body is continuously humidified, until humidity becomes when relative humidity 70%, and observe the situation of change of the external flaw of Micro LED epitaxial wafer under the humidity change in real time through the flaw detector, carry out inside air content and adjust, through constantly toward box inside insert oxygen or other gas, change whole inside air content, and observe the situation of change of the external flaw of Micro LED epitaxial wafer under the air composition change in real time through the flaw detector, it is fixed to take off Micro LED epitaxial wafer and turn over after finishing detecting the one side, thereby make things convenient for whole to carry out turn-over detection, then with the temperature regulation box, the variable in humidity control box and the gas conditioning box is transferred to the invariant, detect the external flaw condition of Micro LED epitaxial wafer under the normal environment and the variable change environment, guarantee holistic detection effect, thereby whole practicality has been increased.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (8)
1. A multi-environment contrast type Micro LED epitaxial wafer defect measuring method is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: conveying raw materials, processing and molding the Micro LED epitaxial wafer by an LED epitaxial wafer processing device, then placing the Micro LED epitaxial wafer in a fixed jig, and conveying the Micro LED epitaxial wafer fixed jig by a conveying device, so as to ensure that the Micro LED epitaxial wafer fixed jig can perform sufficient reciprocating movement in a detection device, and further detect the defects on the outer surface of the Micro LED epitaxial wafer;
step two: setting a control variable, arranging a temperature adjusting box body, a humidity adjusting box body and a gas adjusting box body, arranging flaw detectors in the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body, placing the Micro LED epitaxial wafers on a fixed jig through a conveying device, respectively conveying the Micro LED epitaxial wafers to the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body for measurement, and performing comparison measurement on the same Micro LED epitaxial wafers through arranging two groups of temperature adjusting box bodies, humidity adjusting box bodies and gas adjusting box bodies, so that the measurement effects under different environments can be conveniently obtained;
step three: measuring the defect condition in a changing state, adjusting the conditions in a temperature adjusting box body, a humidity adjusting box body and a gas adjusting box body so as to conveniently and integrally detect the defect condition under the continuous change of the external environment of the Micro LED epitaxial wafer, heating up to 80 ℃ through two degrees of temperature per minute in the temperature adjusting process, observing the change condition of the external defect of the Micro LED epitaxial wafer under the temperature change in real time through a defect detector, humidifying the whole body continuously in the humidity adjusting process until the humidity is 70 percent, observing the change condition of the external defect of the Micro LED epitaxial wafer under the humidity change in real time through the defect detector, adjusting the internal air content, continuously filling oxygen or other gases into the box body to change the internal air content of the whole body, the change condition of the external defects of the Micro LED epitaxial wafer under the change of air components is observed in real time through a defect detector;
step four: carry out the turn-over and detect, take off Micro LED epitaxial wafer and turn-over after finishing detecting one side and fix to convenient whole turn-over that carries out detects, transfers the variable in temperature regulation box, humidity control box and the gaseous regulation box to the invariant after that, detects under the normal environment and the variable changes the external flaw condition of Micro LED epitaxial wafer under the environment, guarantees holistic detection effect.
2. The multi-environment-contrast Micro LED epitaxial wafer defect measurement method of claim 1, wherein: the Micro LED epitaxial wafer provided in the step one is matched with the Micro LED epitaxial wafer fixing jig in shape and size, and the LED epitaxial wafer fixing jig and the movable end of the conveying device are provided with a relatively fixed structure.
3. The multi-environment-contrast Micro LED epitaxial wafer defect measurement method of claim 1, wherein: and the length and the width of the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body in the step two are the same, and the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body are all of internal flaw detector structures.
4. The multi-environment-contrast Micro LED epitaxial wafer defect measurement method of claim 1, wherein: and in the second step, the flaw detector in the temperature adjusting box body is of a high-temperature-resistant structure, the flaw detector in the humidity adjusting box body is of a damp-proof structure, and the flaw detector in the gas adjusting box body is of an anti-corrosion structure.
5. The multi-environment-contrast Micro LED epitaxial wafer defect measurement method of claim 1, wherein: and the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body in the step two are all of structures with observation windows inside, and the specifications of flaw detectors inside the temperature adjusting box body, the humidity adjusting box body and the gas adjusting box body are consistent.
6. The multi-environment-contrast Micro LED epitaxial wafer defect measurement method of claim 1, wherein: in the third step, the temperature of the temperature adjusting box body is between 5 and 85 ℃, the rising speed of the temperature in the temperature adjusting box body is three specifications of 2 degrees/minute, 3 degrees/minute and 5 degrees/minute, and the shell of the temperature adjusting box body is made of heat-insulating materials.
7. The multi-environment-contrast Micro LED epitaxial wafer defect measurement method of claim 1, wherein: and in the third step, an anti-fogging device is arranged in the humidity adjusting box body, and the flaw detector lens in the humidity adjusting box body is an anti-fogging lens.
8. The multi-environment-contrast Micro LED epitaxial wafer defect measurement method of claim 1, wherein: the gas regulating box body is made of sealing materials, and filling gas of the gas regulating box body is of a replaceable structure.
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| CN112885732B (en) | 2023-09-22 |
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