CN112870562B - Implanted piezoelectric MEMS ultrasonic transducer and preparation method thereof - Google Patents
Implanted piezoelectric MEMS ultrasonic transducer and preparation method thereof Download PDFInfo
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- CN112870562B CN112870562B CN202110012155.7A CN202110012155A CN112870562B CN 112870562 B CN112870562 B CN 112870562B CN 202110012155 A CN202110012155 A CN 202110012155A CN 112870562 B CN112870562 B CN 112870562B
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- A61N7/00—Ultrasound therapy
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- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61N—ELECTROTHERAPY; MAGNETOTHERAPY; RADIATION THERAPY; ULTRASOUND THERAPY
- A61N7/00—Ultrasound therapy
- A61N2007/0004—Applications of ultrasound therapy
- A61N2007/0021—Neural system treatment
- A61N2007/0026—Stimulation of nerve tissue
Abstract
The invention provides an implanted piezoelectric MEMS ultrasonic transducer and a preparation method thereof, wherein the method comprises the following steps: the piezoelectric MEMS ultrasonic transducer substrate is provided with a piezoelectric MEMS ultrasonic transducer unit array, and the piezoelectric MEMS ultrasonic transducer unit array is controlled by a back end circuit to carry out three-dimensional ultrasonic focusing, so that focused ultrasonic stimulation and ultrasonic imaging are carried out on an intracranial appointed position or a plurality of positions; an implant substrate for implanting the piezoelectric MEMS ultrasonic transducer substrate into a cranium; the upper surface of the implanted substrate is bonded with the bottom surface of the piezoelectric MEMS ultrasonic transducer substrate; the upper surface of the implant substrate is provided with a plurality of acquisition electrodes for acquiring electroencephalogram signals, and the acquisition electrodes are distributed on two sides of a substrate of the piezoelectric MEMS ultrasonic transducer; and judging whether the stimulation effect is achieved or not according to the electroencephalogram signals collected by the collecting electrodes and the reflected ultrasonic waves. The invention realizes the ultrasonic focusing stimulation of the implanted three-dimensional space, and the stimulation effect is good; and meanwhile, ultrasonic imaging of a three-dimensional space is realized, so that the stimulation effect can be analyzed.
Description
Technical Field
The invention relates to the field of implanted stimulation devices of medical instruments, in particular to an implanted piezoelectric MEMS ultrasonic transducer for intracranial stimulation and a preparation method thereof.
Background
The ultrasonic wave can affect the brain delicately, and has great potential in treating other movement disorders, depression, anxiety and a series of refractory neuropsychiatric disorders because the ultrasonic wave can enhance or inhibit the activity of neurons under the condition of not killing the neurons, and the ultrasonic treatment is simple, convenient and painless and noninvasive.
Ultrasound stimulation is very accurate and penetrating, but ultrasound is often much less effective in the brain than electromagnetic stimulation. The existing ultrasonic stimulation equipment basically performs stimulation from the outside of the body, which further weakens the ultrasonic stimulation effect, and the equipment also has the defects of difficult preparation, high cost and complex operation.
An ultrasonic transducer is a device that converts input electric energy into mechanical energy in the form of ultrasonic waves to be emitted, or converts received mechanical energy in the form of ultrasonic waves into electric energy to be output. An ultrasonic transducer based on a Micro-Electro-Mechanical System (MEMS) process and a piezoelectric material is called a piezoelectric Micro-Mechanical ultrasonic transducer, which has advantages of low power consumption, small size, low cost, and mass production, so that the piezoelectric MEMS transducer has a wide application in the field of medical devices.
From a search of the prior art literature, Wonhye Lee et al, written in "Scientific Reports" (2016) "Trans-cranial focused ultrasound stimulation of human primary visual cortex", which demonstrates the effect of ultrasound stimulation on the human visual cortex through extracranial ultrasound transducers, were found. The ultrasonic transducer can perform ultrasonic stimulation without implantation. However, the extracranial ultrasonic transducer has limited stimulation effect and too large size, and cannot integrate the collecting electrodes and process electroencephalogram signals at the same time.
It has been found through a search that chinese patent application No. CN201780054777.8 describes an implantable device configured to emit electrical pulses. Wherein the implantable device comprises: an ultrasound transducer configured to receive ultrasound waves that power the implantable device and encode a trigger signal; a first electrode and a second electrode configured to be in electrical communication with tissue and to emit electrical pulses to the tissue in response to the trigger signal; and an integrated circuit including the energy storage circuit. A system is also described that includes one or more implantable devices and an interrogator configured to operate the one or more implantable devices. Further described is a closed loop system comprising a first device configured to detect a signal, an interrogator configured to transmit a trigger signal in response to the detected signal, and an implantable device configured to transmit an electrical pulse in response to receiving the trigger signal. Further described are a computer system useful for operating one or more implantable devices, and a method of electrically stimulating tissue. However, the above patents have the following problems: the brain-care device can not be stably implanted into the brain for a long time, and a specific brain area can not be accurately positioned in the brain, so that the brain is damaged, and the imaging auxiliary ultrasonic stimulation cannot be carried out.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide an implanted piezoelectric MEMS ultrasonic transducer and a preparation method thereof.
A first aspect of the invention provides an implantable piezoelectric MEMS ultrasound transducer for intracranial stimulation, comprising:
a piezoelectric MEMS ultrasonic transducer substrate; the piezoelectric MEMS ultrasonic transducer substrate is provided with a piezoelectric MEMS ultrasonic transducer unit array, and the piezoelectric MEMS ultrasonic transducer unit array is controlled by a back-end circuit to carry out three-dimensional ultrasonic focusing so as to realize focusing ultrasonic stimulation and ultrasonic imaging on an intracranial designated position;
an implant substrate for implanting the piezoelectric MEMS ultrasonic transducer substrate into a cranium; the upper surface of the implanted substrate is bonded with the bottom surface of the piezoelectric MEMS ultrasonic transducer substrate; the upper surface of the implantation substrate is provided with at least two acquisition electrodes with potential difference for acquiring electroencephalogram signals, and the two acquisition electrodes are distributed on two sides of the piezoelectric MEMS ultrasonic transducer substrate; whether the stimulation effect is achieved can be judged according to the electroencephalogram signals collected by the collecting electrodes and the reflected ultrasonic waves.
Preferably, an implantable piezoelectric MEMS ultrasound transducer for intracranial stimulation comprises: the piezoelectric MEMS ultrasonic transducer substrate is uniformly distributed on the implanted substrate along the longitudinal direction, and collecting electrodes forming potential difference are respectively arranged on two sides of each piezoelectric MEMS ultrasonic transducer substrate, so that focused ultrasonic stimulation and ultrasonic imaging of a plurality of intracranial positions are realized.
Preferably, the piezoelectric MEMS ultrasound transducer cell array comprises: the packaging structure comprises a first electrode, a second electrode, a piezoelectric layer, a silicon dioxide layer, a silicon substrate and a packaging layer; wherein the silicon substrate is positioned at the bottommost layer; the silicon dioxide layer is arranged on the upper surface of the silicon substrate; the second electrode is arranged on the upper surface of the silicon dioxide layer; the piezoelectric layer is arranged on the upper surface of the second electrode; the first electrode is arranged on the upper surface of the piezoelectric layer; the first electrode and the piezoelectric layer are distributed above the second electrode in an array mode to form a device, and the packaging layer is arranged on the outer surface of the device and enables the first electrode to be exposed to the outside.
Preferably, the first electrodes of each row of the piezoelectric MEMS ultrasound transducer array are interconnected and the second electrodes of each column are interconnected, enabling row-column addressing.
Preferably, the piezoelectric layer is made of lead zirconate titanate piezoelectric ceramic, zinc oxide or lead magnesium niobate piezoelectric ceramic.
Preferably, the shape of the array of piezoelectric MEMS ultrasound transducer elements adopts one or more of a rectangular array, a polygonal array or a circular array.
Preferably, the material of the implanted substrate is silicon.
The second aspect of the present invention provides a method for preparing the implantable piezoelectric MEMS ultrasound transducer for intracranial stimulation, comprising:
preparing collecting electrodes on an implanted substrate, namely forming an electrode group on the implanted substrate, wherein the electrode group comprises two collecting electrodes which are distributed at intervals, and the two collecting electrodes have a height difference to form a potential difference;
preparing a piezoelectric MEMS ultrasonic transducer substrate, namely forming a piezoelectric MEMS ultrasonic transducer unit array on the piezoelectric MEMS ultrasonic transducer substrate;
and bonding the bottom surface of the prepared piezoelectric MEMS ultrasonic transducer substrate and the upper surface of the prepared implantation substrate together, and enabling the piezoelectric MEMS ultrasonic transducer substrate to be positioned between the two acquisition electrodes to obtain the device.
Preferably, after bonding the prepared bottom surface of the piezoelectric MEMS ultrasonic transducer substrate and the prepared upper surface of the implant substrate, the method further comprises packaging the device by using parylene, polytrimethylene carbonate or thermoplastic polyurethane.
Preferably, the preparing the piezoelectric MEMS ultrasonic transducer substrate comprises:
the silicon substrate is positioned at the bottommost layer;
preparing a silicon dioxide layer on the upper surface of the silicon substrate;
preparing a second electrode on the upper surface of the silicon dioxide layer;
preparing a piezoelectric layer on the upper surface of the second electrode;
preparing a first electrode on the upper surface of the piezoelectric layer;
patterning the first electrode;
patterning the second electrode;
etching the back of the silicon substrate to the silicon dioxide layer, and forming a back cavity on the silicon substrate to obtain the piezoelectric MEMS ultrasonic transducer substrate;
and packaging the piezoelectric MEMS ultrasonic transducer substrate.
Compared with the prior art, the invention has at least one of the following beneficial effects:
the transducer can be implanted into intracranial stimulation, and has a good stimulation effect compared with extracranial stimulation; the ultrasonic focusing stimulation of an implanted three-dimensional space is realized; meanwhile, ultrasonic imaging of a three-dimensional space is realized, and a brain area to be stimulated can be determined in an auxiliary manner; therefore, the electroencephalogram signals are collected through the collecting electrodes, and the stimulation effect is analyzed.
Drawings
Other features, objects and advantages of the invention will become more apparent upon reading of the detailed description of non-limiting embodiments with reference to the following drawings:
FIG. 1 is a schematic structural diagram of an implantable piezoelectric MEMS ultrasonic transducer in accordance with a preferred embodiment of the present invention;
FIG. 2 is a flow chart of a preferred embodiment of the present invention for fabricating a piezoelectric MEMS ultrasonic transducer substrate;
FIG. 3 is a schematic flow chart of the process of fabricating the collecting electrode on the implanted substrate according to one embodiment of the present invention;
the labels in the figures are: the piezoelectric MEMS ultrasonic transducer comprises a piezoelectric MEMS ultrasonic transducer substrate 1, a piezoelectric MEMS ultrasonic transducer unit array 2, an acquisition electrode 3, an implantation substrate 4, a first electrode 5, a piezoelectric layer 6, a second electrode 7, a silicon dioxide layer 8 and a silicon substrate 9.
Detailed Description
The present invention will be described in detail with reference to specific examples. The following examples will aid those skilled in the art in further understanding the present invention, but are not intended to limit the invention in any manner. It should be noted that variations and modifications can be made by persons skilled in the art without departing from the spirit of the invention. All falling within the scope of the invention.
Referring to fig. 1, an implanted piezoelectric MEMS ultrasound transducer for intracranial stimulation according to a preferred embodiment of the present invention is shown, which comprises: a plurality of piezoelectric MEMS ultrasonic transducer substrates and an implant substrate; wherein, the first and the second end of the pipe are connected with each other,
the piezoelectric MEMS ultrasonic transducer substrate is provided with a piezoelectric MEMS ultrasonic transducer unit array, and the piezoelectric MEMS ultrasonic transducer unit array is controlled by the back end circuit to carry out three-dimensional ultrasonic focusing; the focusing ultrasonic stimulation and ultrasonic imaging are carried out on the designated position or a plurality of positions in the cranium; the back end circuit is used for receiving and processing signals; and the electrodes are connected with the electrodes of the piezoelectric MEMS ultrasonic transducer substrate through leads.
Implanting a substrate to implant a piezoelectric MEMS ultrasonic transducer substrate into a skull; the upper surface of the implanted substrate is bonded with the bottom surface of the piezoelectric MEMS ultrasonic transducer substrate; the upper surface of the implantation substrate is provided with a plurality of collecting electrodes for collecting electroencephalogram signals, and the collecting electrodes are distributed on two sides of the substrate of the piezoelectric MEMS ultrasonic transducer.
The piezoelectric MEMS ultrasonic transducer substrates are uniformly distributed on the implanted substrate along the longitudinal direction, two collecting electrodes are respectively arranged on two sides of each piezoelectric MEMS ultrasonic transducer substrate, and the collecting electrodes on the two sides have a height difference to form a potential difference, so that the piezoelectric effect is triggered. The piezoelectric MEMS ultrasonic transducer is implanted into the cranium to realize intracranial ultrasonic stimulation, and the electroencephalogram signal acquired by the acquisition electrode and the reflected ultrasonic wave can be comprehensively analyzed, namely the acquired electroencephalogram signal and the reflected ultrasonic wave are compared to judge whether the stimulation effect is achieved.
The implanted piezoelectric MEMS ultrasonic transducer is used for preparing a piezoelectric MEMS ultrasonic transducer array on a silicon chip integrated with a piezoelectric film through an MEMS process. The implanted piezoelectric MEMS ultrasonic transducer receives and transmits ultrasonic waves by utilizing a piezoelectric effect, processes electric signals converted by the received ultrasonic waves through a back-end circuit to realize ultrasonic stimulation and three-dimensional ultrasonic imaging of a three-dimensional space, and can analyze the stimulation effect.
In some other preferred embodiments, the array of piezoelectric MEMS ultrasound transducer cells comprises: the packaging structure comprises a first electrode, a second electrode, a piezoelectric layer, a silicon dioxide layer, a silicon substrate and a packaging layer; wherein, the silicon substrate is positioned at the bottommost layer; the silicon dioxide layer is arranged on the upper surface of the silicon substrate; the second electrode is arranged on the upper surface of the silicon dioxide layer; the piezoelectric layer is arranged on the upper surface of the second electrode; the first electrode is arranged on the upper surface of the piezoelectric layer; the first electrode and the piezoelectric layer are distributed above the second electrode in an array mode to form a device, and the packaging layer is arranged on the outer surface of the device and enables the first electrode to be exposed to the outside. The first electrodes of each row of the piezoelectric MEMS ultrasonic transducer array are connected with each other, and the second electrodes of each column of the piezoelectric MEMS ultrasonic transducer array are connected with each other to form a two-dimensional row-column addressing array, so that three-dimensional focusing is realized, and the stimulation imaging function is completed.
In other preferred embodiments, the piezoelectric layer is made of lead zirconate titanate piezoelectric ceramic, zinc oxide or lead magnesium niobate piezoelectric ceramic. The piezoelectric layer is made of lead magnesium niobate piezoelectric ceramics which have high piezoelectric coefficient and electromechanical coupling coefficient.
In other partially preferred embodiments, the shape of the array of piezoelectric MEMS ultrasound transducer elements takes the form of one or more of a rectangular array, a polygonal array, or a circular array.
In other partially preferred embodiments, the material of the implanted substrate is silicon. Silicon has sufficient rigidity to implant into the brain and can be mass-produced by MEMS process.
The implantable piezoelectric MEMS ultrasonic transducer for intracranial stimulation can be prepared by the following method, comprising the following steps of:
the collecting electrodes are prepared on the implanted substrate, that is, an electrode group is formed on the implanted substrate, the electrode group includes two collecting electrodes distributed at a distance, and the two collecting electrodes have a height difference to form a potential difference, as shown in fig. 3.
Preparing a piezoelectric MEMS ultrasonic transducer substrate;
and bonding the bottom surface of the prepared piezoelectric MEMS ultrasonic transducer substrate and the upper surface of the prepared implantation substrate together, and distributing each piezoelectric MEMS ultrasonic transducer substrate between two acquisition electrodes. The piezoelectric MEMS ultrasonic transducer substrate and the implantation substrate can be bonded together by methods such as anodic bonding or eutectic bonding, and the device is obtained.
Preferably, after bonding the bottom surface of the piezoelectric MEMS ultrasonic transducer substrate and the upper surface of the implant substrate, the method further comprises encapsulating the device with Parylene (Parylene), polytrimethylene carbonate (PTMC) or Thermoplastic Polyurethane (TPU).
In some other preferred embodiments, the following steps may be used to fabricate the piezoelectric MEMS ultrasound transducer substrate:
the silicon substrate is positioned at the bottommost layer;
preparing a silicon dioxide layer on the upper surface of a silicon substrate;
preparing a second electrode on the upper surface of the silicon dioxide layer;
preparing a piezoelectric layer on the upper surface of the second electrode;
preparing a first electrode on the upper surface of the piezoelectric layer;
referring to fig. 2 (a), the first electrode is patterned; the method comprises the following specific steps: and forming a first electrode pattern by photoetching, and removing the photoresist after finishing the first electrode patterning by ion beam etching.
Referring to fig. 2 (b), the second electrode is patterned; the method specifically comprises the following steps: and forming a pattern of the second electrode by photoetching, etching the piezoelectric layer by a wet etching method to expose the second electrode, and removing the photoresist after patterning is finished.
Referring to fig. 2 (c), a back cavity pattern is formed on the back of the silicon substrate through photolithography, then the silicon is etched to a silicon dioxide layer through deep silicon etching, after patterning of the back cavity is completed, the photoresist is removed, and a back cavity is formed on the silicon substrate, so that the piezoelectric MEMS ultrasonic transducer cell array is obtained. The back cavity shape matches the shape of the first electrode in order to provide space for the device to vibrate and thereby emit ultrasound waves.
Packaging the piezoelectric MEMS ultrasonic transducer unit array.
The foregoing description of specific embodiments of the present invention has been presented. It is to be understood that the present invention is not limited to the specific embodiments described above, and that various changes or modifications may be made by one skilled in the art within the scope of the appended claims without departing from the spirit of the invention.
Claims (8)
1. An implantable piezoelectric MEMS ultrasound transducer for intracranial stimulation, comprising:
a piezoelectric MEMS ultrasonic transducer substrate; the piezoelectric MEMS ultrasonic transducer substrate is provided with a piezoelectric MEMS ultrasonic transducer unit array, and the piezoelectric MEMS ultrasonic transducer unit array is controlled by a back end circuit to carry out three-dimensional ultrasonic focusing, so that focused ultrasonic stimulation and ultrasonic imaging are carried out on an intracranial designated position;
an implant substrate for implanting the piezoelectric MEMS ultrasonic transducer substrate into a cranium; the upper surface of the implanted substrate is bonded with the bottom surface of the piezoelectric MEMS ultrasonic transducer substrate; the upper surface of the implantation substrate is provided with at least two acquisition electrodes with potential difference for acquiring electroencephalogram signals, and the two acquisition electrodes are distributed on two sides of the piezoelectric MEMS ultrasonic transducer substrate; judging whether a stimulation effect is achieved or not according to the electroencephalogram signals collected by the collecting electrodes and the reflected ultrasonic waves;
the piezoelectric MEMS ultrasonic transducer cell array includes: the packaging structure comprises a first electrode, a second electrode, a piezoelectric layer, a silicon dioxide layer, a silicon substrate and a packaging layer; wherein the silicon substrate is positioned at the bottommost layer; the silicon dioxide layer is arranged on the upper surface of the silicon substrate; the second electrode is arranged on the upper surface of the silicon dioxide layer; the piezoelectric layer is arranged on the upper surface of the second electrode; the first electrode is arranged on the upper surface of the piezoelectric layer; the first electrode and the piezoelectric layer are distributed above the second electrode in an array mode to form a device, the packaging layer is arranged on the outer surface of the device, and the first electrode is exposed to the outside;
the first electrodes of each row of the piezoelectric MEMS ultrasonic transducer array are connected with each other, and the second electrodes of each column are connected with each other, so that row and column addressing is realized.
2. The implantable piezoelectric MEMS ultrasound transducer for intracranial stimulation according to claim 1, comprising a plurality of piezoelectric MEMS ultrasound transducer substrates, wherein the plurality of piezoelectric MEMS ultrasound transducer substrates are uniformly distributed on the implant substrate along a longitudinal direction, and two sides of each piezoelectric MEMS ultrasound transducer substrate are respectively provided with a collecting electrode for forming a potential difference, so as to achieve focused ultrasound stimulation and ultrasound imaging at a plurality of intracranial positions.
3. The implantable piezoelectric MEMS ultrasound transducer for intracranial stimulation as defined in claim 1, wherein the piezoelectric layer is made of lead zirconate titanate piezoelectric ceramic, zinc oxide, or lead magnesium niobate piezoelectric ceramic.
4. The implantable piezoelectric MEMS ultrasound transducer for intracranial stimulation according to any one of claims 1-3, wherein the shape of the array of piezoelectric MEMS ultrasound transducer elements employs one or more of a rectangular array, a polygonal array, or a circular array.
5. The implantable piezoelectric MEMS ultrasound transducer for intracranial stimulation, as recited in claim 1, wherein the material of the implant substrate is silicon.
6. A method of making an implantable piezoelectric MEMS ultrasound transducer for intracranial stimulation according to any one of claims 1-5, comprising:
preparing collecting electrodes on an implanted substrate, namely forming an electrode group on the implanted substrate, wherein the electrode group comprises two collecting electrodes distributed at a distance, and the two collecting electrodes have a height difference to form a potential difference;
preparing a piezoelectric MEMS ultrasonic transducer substrate, namely forming a piezoelectric MEMS ultrasonic transducer unit array on the piezoelectric MEMS ultrasonic transducer substrate;
and bonding the bottom surface of the prepared piezoelectric MEMS ultrasonic transducer substrate and the upper surface of the prepared implantation substrate together, and enabling the piezoelectric MEMS ultrasonic transducer substrate to be positioned between the two acquisition electrodes to obtain the device.
7. The method of claim 6, further comprising encapsulating the device with parylene, polytrimethylene carbonate, or thermoplastic polyurethane after bonding the bottom surface of the substrate of the piezoelectric MEMS ultrasound transducer to the top surface of the substrate of the implant.
8. The method of claim 6, wherein the step of preparing the substrate of the piezoelectric MEMS ultrasonic transducer comprises:
the silicon substrate is positioned at the bottommost layer;
preparing a silicon dioxide layer on the upper surface of the silicon substrate;
preparing a second electrode on the upper surface of the silicon dioxide layer;
preparing a piezoelectric layer on the upper surface of the second electrode;
preparing a first electrode on the upper surface of the piezoelectric layer;
patterning the first electrode;
patterning the second electrode;
etching the back of the silicon substrate to the silicon dioxide layer, and forming a back cavity on the silicon substrate to obtain the piezoelectric MEMS ultrasonic transducer substrate;
and packaging the piezoelectric MEMS ultrasonic transducer substrate.
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| CN114053582A (en) * | 2021-11-09 | 2022-02-18 | 上海脑虎科技有限公司 | Visual enhancement method, device and system based on flexible electrode probe |
| CN117225676A (en) * | 2023-11-14 | 2023-12-15 | 南京声息芯影科技有限公司 | Integrated structure of ultrasonic transducer array and CMOS circuit and manufacturing method |
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| CN101583062A (en) * | 2009-06-26 | 2009-11-18 | 电子科技大学 | Array micro audio directional transducer |
| CN101844130A (en) * | 2010-05-14 | 2010-09-29 | 中国科学技术大学 | Array silicon micro-ultrasonic transducer and manufacturing method thereof |
| CN104623808B (en) * | 2013-11-14 | 2019-02-01 | 先健科技(深圳)有限公司 | Deep brain stimulation system |
| CN104826243B (en) * | 2015-05-15 | 2018-02-27 | 深圳先进技术研究院 | A kind of device of ultrasound stimulation nerve fiber |
| CN104984890B (en) * | 2015-06-06 | 2017-12-08 | 中国科学院合肥物质科学研究院 | A kind of flexible focusing MEMS supersonic generators and preparation method thereof |
| CN205041400U (en) * | 2015-07-16 | 2016-02-24 | 燕山大学 | Novel it is portable through cranium ultrasound stimulation and EEG signal collection device |
| US11129985B2 (en) * | 2015-10-21 | 2021-09-28 | Neuspera Medical, Inc. | Devices, systems, and methods for stimulation therapy |
| CN105561469B (en) * | 2015-12-12 | 2018-11-09 | 西安交通大学 | A kind of miniature brain electrode array chip of implanted Multifunctional two-sided |
| CN106037723B (en) * | 2016-05-17 | 2020-11-10 | 西安交通大学 | Brain electrophysiological signal recording device and method for transcranial ultrasonic nerve stimulation |
| WO2018009908A1 (en) * | 2016-07-07 | 2018-01-11 | The Regents Of The University Of California | Implants using ultrasonic backscatter for radiation detection and oncology |
| CN107413612A (en) * | 2017-06-20 | 2017-12-01 | 南京邮电大学 | Piezoelectric supersonic generator of multi-frequency and preparation method thereof |
| CN109645999B (en) * | 2018-11-29 | 2022-04-26 | 天津大学 | 4D transcranial focused ultrasound nerve imaging method based on acoustoelectric effect |
| WO2020243247A1 (en) * | 2019-05-29 | 2020-12-03 | Liminal Sciences, Inc. | Systems and methods for monitoring brain health |
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