CN105561469B - A kind of miniature brain electrode array chip of implanted Multifunctional two-sided - Google Patents
A kind of miniature brain electrode array chip of implanted Multifunctional two-sided Download PDFInfo
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Abstract
A kind of miniature brain electrode array chip of implanted Multifunctional two-sided, there are three electric pulse stimulation electrode, four electrochemical detection electrodes and seven brain electro-detection electrodes for each EDS maps of electrode stem；Electric pulse stimulation electrode, brain electro-detection electrode and electrochemical detection electrode are symmetrically distributed on the central axes in two faces of electrode stem；Electrochemical detection electrode and brain electro-detection electrode are connected to contact conductor interface pad by detecting electrode lead；Electric pulse stimulation electrode is connected to contact conductor interface pad by stimulating electrode lead；Contact conductor interface pad 7 is symmetrically distributed in the both sides of the central axes in two faces of electrode handle；The present invention is integrated into the electrode of different function on one chip, realizes the EEG signals and electrochemical signals for detecting brain specific region while electric pulse stimulation brain deep tissue, is suitble to be chronically implanted intracerebral, help is provided for the treatment and research of neurogenic disease.
Description
Technical field
The present invention relates to micro electro mechanical processing technical field and implantation micro-electrode technical field, more particularly to a kind of implanted
The miniature brain electrode array chip of Multifunctional two-sided.
Background technology
In medical rehabilitation field, the diseases such as treatment parkinsonism, severe epilepsy and various addictions, outside generally use
Section's operation is implanted into brain electrode near lesion, and gives the electro photoluminescence of certain frequency, pulsewidth and amplitude to be treated.Face at present
The product of the mainly Medtronic used on bed carries out patient the treatment of lesions located in deep brain (DBS), although DBS is clinically
It is widely used, but its mechanism of action is still not clear at present.For a long time, people utilize patch-clamp, metal microelectrode and glass
Microelectrode in body or in vitro nerve cell to carrying out electro physiology basic research and zoopery.It is limited by material and processing technology
System, the number of channels of these electrodes is less, and the zone of action is limited, and the relatively simple integrated level of function is not high.Recently as micro-
Electromechanical processing technology (MEMS) development, emerges micro- brain electrode of multiple material and technique manufacture, in the fields DBS successively both at home and abroad
Certain achievement in research is achieved, but most electrodes are all the single-side electrodes having a single function, which greatly limits DBS's
Effect of stimulation and the limitation for causing signal record.
Nervous system is a complicated system, simply records the electro photoluminescence of EEG signals, electrochemical signals or blindness
All it is difficult to there is substantive breakthrough.There is thousands of nerve cell in the brain of people, telecommunications is transmitted by cynapse between them
Number and chemical signal.When treating the mental diseases such as Parkinson with Deep brain stimulation, nerve cell electricity can be recorded simultaneously
The various dimensions small-signals such as the neurotransmitters electrochemical signals such as physiological signal and acquisition dopamine, control research lesions located in deep brain
Therapeutic effect is of great significance.Therefore, research and development one kind can be carried out at the same time electric pulse stimulation, EEG signals detection and electrochemistry inspection
The brain electrode for the multi-functional high integration surveyed is necessary to the research of DBS.
It is closed by the electrode bilateral of substrate of silicon substrate by micro-nano technology technology based on micro electro mechanical system (MEMS) technology (MEMS)
Reason planning and layout electrode function region, realize and detect EEG signals and electrochemical signals while electric pulse stimulation, have no
There is relevant report.
Invention content
In order to overcome the defect of the above-mentioned prior art, the purpose of the present invention is to provide a kind of implanted Multifunctional two-sided is micro-
Type brain electrode array chip, using silicon substrate as substrate, multi-channel electrode site is laid out in electrode chip bilateral the electrode chip, can
It is used for EEG signals and Electrochemical Detection while carrying out electric pulse stimulation, is suitble to be chronically implanted intracerebral, is neurogenic disease
Treatment and research help is provided.
In order to achieve the above object, the technical scheme is that：
A kind of miniature brain electrode array chip of implanted Multifunctional two-sided, including electrode stem 1, each face of electrode stem 1 point
There are three electric pulse stimulation electrode site 2, four electrochemical detection electrode sites 4 and seven brain electro-detection electrode sites 3 for cloth；Electricity
Impulse stimulation electrode site 2, brain electro-detection electrode site 3 and electrochemical detection electrode site 4 are symmetrically distributed in the two of electrode stem 1
On the central axes in a face；Electrochemical detection electrode site 4 and brain electro-detection electrode site 3 are connected to by detecting electrode lead 6
Contact conductor interface pad 7；Electric pulse stimulation electrode site 2 is connected to contact conductor interface pad by stimulating electrode lead 5
7；Contact conductor interface pad 7 is symmetrically distributed in the both sides of the central axes in two faces of electrode handle 8, contact conductor interface pad 7
Cloth 2 groups × 7 is divided on 8 each side of electrode handle.
The base material of the electrode stem 1 is monocrystalline silicon, mixes one of silicon or soi wafer, the thickness of the electrode stem 1
Degree is 200um, and tip is in 32 degree of angles, and 1 body width 400-600um of electrode stem, long 8.8mm, 1 surface of electrode stem covers 200-
300nm insulating layers, insulating layer are one of silica or silicon nitride.
The base material of the electrode handle 8 is monocrystalline silicon, mixes one of silicon or soi wafer, and the thickness of electrode handle 8 is
200um, long 4mm, wide 2mm, 8 surface of electrode handle cover 200-300nm insulating layers, insulating layer be silica or silicon nitride wherein
One of.
The electrode of the electric pulse stimulation electrode site 2, brain electro-detection electrode site 3 and electrochemical detection electrode site 4
Material is the metallic film of good biocompatibility, including gold, platinum, iridium, titanium, and thickness 200-300nm passes through 20-30nm crome metals
It is bonded in electrode basement；The electric pulse stimulation electrode site 2 is the border circular areas of diameter 100um, the brain electro-detection electricity
Pole site 3 is the border circular areas of diameter 20um, and the electrochemical detection electrode site 4 is the border circular areas of diameter 50um；
The electric pulse stimulation electrode site 2 and brain electro-detection electrode site 3 are spaced, spacing 250um；The electrification
It learns detecting electrode site 4 and brain electro-detection electrode site 3 is spaced, spacing 300um.
The material of the stimulating electrode lead 5, detecting electrode lead 6 and contact conductor interface pad 7 be include gold, platinum,
One kind of the good metal of copper electric conductivity, thickness 200-300nm are bonded in by 20-30nm crome metals in electrode basement；
The method of 6 surface insulation of the stimulating electrode lead 5 and detecting electrode lead is, by magnetron sputtering technique at it
One layer of 200-300nm thickness SiO of uniform sputter above2Insulating layer；
The stimulating electrode lead 5 width 10um, spacing 5um；The detecting electrode lead 6 width 5um, spacing 5um；Institute
It states stimulating electrode lead 5 and detecting electrode lead 6 to connect up in the central axes both sides of microelectrode the same face respectively, the contact conductor
7 size of interface pad is 400um × 400um, vertical interval 200um.
Meaning of the present invention is：Highly integrated electric pulse stimulation electrode, brain electric-examination on a microelectrode array chip
Electrode and electrochemical detection electrode are surveyed, using the difference of electrode material, layout and structure, is realized to nervous system specific region
Electric pulse stimulation, EEG signals detection and Electrochemical Detection function；The present invention fully considers the sphere of action and thorn of electrode stimulating
Swash effect, by the way of two-sided layout electrode, two-sided electric pulse stimulation.
Description of the drawings
Fig. 1 is the structural schematic diagram of a microelectrode array chip of the invention.
Fig. 2 is the cross section structure figure at second away from tip impulse stimulation electrode.
In figure：1. electrode stem, 2. impulse stimulation electrode sites, 3. brain electro-detection electrode sites, 4. electrochemical detection electrodes
Site, 5. stimulating electrode leads, 6. detecting electrode leads, 7. contact conductor interface pads, 8. electrode handles.
Specific implementation mode
The present invention will be further described in the following with reference to the drawings and specific embodiments.
As shown in Figure 1, 2, the miniature brain electrode array chip of a kind of implanted Multifunctional two-sided, including electrode stem 1, electric pulse
Stimulation electrode sites 2, brain electro-detection electrode site 3, electrochemical detection electrode site 4, stimulating electrode lead 5, detecting electrode draw
Line 6, contact conductor interface pad 7 and electrode handle 8；Electric pulse stimulation electrode site 2 that there are three each EDS maps of electrode stem 1,
Four electrochemical detection electrode sites 4 and seven brain electro-detection electrode sites 3；Electric pulse stimulation electrode site 2, brain electro-detection electricity
Pole site 3 and electrochemical detection electrode site 4 are symmetrically distributed on the central axes in two faces of electrode stem 1；Electrochemical Detection electricity
Pole site 4 and brain electro-detection electrode site 3 are connected to contact conductor interface pad 7 by detecting electrode lead 6；Electric pulse stimulation
Electrode site 2 is connected to contact conductor interface pad 7 by stimulating electrode lead 5；Contact conductor interface pad 7 is symmetrically distributed in
The both sides of the central axes in two faces of electrode handle 8, contact conductor interface pad 7 are divided into 2 groups of cloth on each side of electrode handle 8
× 7.
The electric pulse stimulation electrode site 2, brain electro-detection electrode site 3, electrochemical detection electrode site 4 are using two-sided
Layout processing is symmetrically distributed in electrode chip both sides, and stimulation or letter can be greatly improved compared with single side is laid out electrode site
Number acquisition spatial resolution.
The electric pulse stimulation electrode site 2, brain electro-detection electrode site 3 deposit one in the above by electro-deposition method
Layer noble metal nano particles improve electro photoluminescence and signal acquisition quality to reduce the impedance of respective electrode site.
After the electrochemical detection electrode site 4 is by one layer-selective polymer film of Electrochemical Modification and nano-complex
Concentration for selective enumeration method neurotransmitter dopamine.
The base material of the electrode stem 1 is monocrystalline silicon, mixes one of silicon or soi wafer, the thickness of the electrode stem 1
Degree is 200um, and tip is in 32 degree of angles, and 1 body width 400-600um of electrode stem, long 8.8mm, 1 surface of electrode stem covers 200-
300nm insulating layers, insulating layer are one of silica or silicon nitride；
The base material of the electrode handle 8 is monocrystalline silicon, mixes one of silicon or soi wafer, and the thickness of electrode handle 8 is
200um, long 4mm, wide 2mm, 8 surface of electrode handle cover 200-300nm insulating layers, insulating layer be silica or silicon nitride wherein
One of.
The electrode of the electric pulse stimulation electrode site 2, brain electro-detection electrode site 3 and electrochemical detection electrode site 4
Material is the metallic film of good biocompatibility, including gold, platinum, iridium, titanium, and thickness 200-300nm passes through 20-30nm crome metals
It is bonded in electrode basement；2 diameter 100um of the electric pulse stimulation electrode site, 3 diameter of brain electro-detection electrode site
20um, 4 diameter 50um of the electrochemical detection electrode site；The electric pulse stimulation electrode site 2 and brain electro-detection electrode position
3 spaced, spacing 250um of point；The electrochemical detection electrode site 4 and brain electro-detection electrode site 3 are spaced, spacing
300um。
The electric pulse stimulation electrode site 2 and brain electro-detection electrode site 3 are spaced, spacing 250um, it is therefore an objective to energy
The information of stimulation electrode sites peripheral neurons electric discharge is enough collected, and it is to ensure two kinds of different function that spacing, which is set as 250um,
Electrode site do not interfere with each other；The electrochemical detection electrode site 4 and brain electro-detection electrode site 3 are spaced, spacing
300um, advantage are can to collect two different signals in same brain area.
The electric pulse stimulation electrode site 2, brain electro-detection electrode site 3 deposit one in the above by electro-deposition method
Layer noble metal nano particles carry out electrode site surface modification.
After the electrochemical detection electrode site 4 is by one layer-selective polymer film of Electrochemical Modification and nano-complex
Concentration for selective enumeration method neurotransmitter dopamine.
The material of the stimulating electrode lead 5, detecting electrode lead 6 and contact conductor interface pad 7 be include gold, platinum,
One kind of the good metal of copper electric conductivity, thickness 200-300nm are bonded in by 20-30nm crome metals in electrode basement；Institute
State stimulating electrode lead 5 and 6 surface of detecting electrode lead covering 200-300nm thickness SiO2Insulating layer；The stimulating electrode lead 5
Width 10um, spacing 5um；The detecting electrode lead 6 width 5um, spacing 5um；The stimulating electrode lead 5 and detecting electrode
Lead 6 is connected up in the central axes both sides of microelectrode the same face respectively；7 size of contact conductor interface pad be 400um ×
400um, vertical interval 200um.Stimulating electrode wire widths are 2 times of detecting electrode wire widths, and the benefit designed in this way is
Reduce its resistance, be input in brain area convenient for the stimulated current of time, and stimulation lead and detection lead are in the layout of electricity respectively
Pole bar central axes both sides, its advantage is that eliminating influence of the impulse stimulation electric current to the EEG signals or electrochemical signals that detect；
Operation principle of the present invention is：
The present invention is performed the operation by sphenotresia, is implanted in cerebral cortex or cerebral deep tissue；Microelectrode passes through
Contact conductor interface pad 7 is connected with external pulse stimulation circuit, EEG signals recording equipment or electrochemical workstation.
For electric pulse stimulation electrode site 2, outside stimulus circuit generates the electric pulse of special parameter, passes through contact conductor
Interface pad 7 and stimulating electrode lead 5 are transmitted to electric pulse stimulation electrode 2, and electric pulse stimulation electrode site 2 is in direct contact brain group
It knits, applies the electric pulse stimulation of special parameter to brain nervous cell；
For brain electro-detection electrode site 3, nerve cell generates action potential under conditions of stimulation, by brain electro-detection electricity
3 records electrophysiologicalsignals signals of pole site, pass through detecting electrode lead 6 successively and contact conductor interface pad 7 is transmitted to external brain electricity
Recording equipment；
For electrochemical detection electrode site 4, nerve cell release neurotransmitters (such as dopamine) under conditions of stimulation
Catalytic electrochemical coating material, causes the current-responsive in electrochemical detection electrode site 4, and electric current passes through detecting electrode lead
6 and contact conductor interface pad 7 be transmitted to electrochemical workstation.
Claims (5)
1. a kind of miniature brain electrode array chip of implanted Multifunctional two-sided, which is characterized in that including electrode stem (1), electrode stem
(1) there are three electric pulse stimulation electrode site (2), four electrochemical detection electrode sites (4) and seven brains for each EDS maps
Electro-detection electrode site (3)；Electric pulse stimulation electrode site (2), brain electro-detection electrode site (3) and electrochemical detection electrode position
Point (4) is symmetrically distributed on the central axes in (1) two face of electrode stem；Electrochemical detection electrode site (4) and brain electro-detection electrode
Site (3) is connected to contact conductor interface pad (7) by detecting electrode lead (6)；Electric pulse stimulation electrode site (2) passes through
Stimulating electrode lead (5) is connected to contact conductor interface pad (7)；Contact conductor interface pad (7) is symmetrically distributed in electrode handle
The both sides of the central axes in (8) two faces, contact conductor interface pad (7) are divided into cloth 2 groups × 7 on each side of electrode handle (8)
It is a；
The base material of the electrode stem (1) is monocrystalline silicon, mixes silicon or soi wafer, and the thickness of the electrode stem (1) is
200um, tip are in 32 degree of angles, and electrode stem (1) body width 400-600um, long 8.8mm, electrode stem (1) surface covers 200-
300nm insulating layers, insulating layer are silica or silicon nitride；
The base material of the electrode handle (8) is monocrystalline silicon, mixes silicon or soi wafer, and the thickness of electrode handle (8) is 200um, long
4mm, wide 2mm, electrode handle (8) surface cover 200-300nm insulating layers, and insulating layer is silica or silicon nitride.
2. the miniature brain electrode array chip of a kind of implanted Multifunctional two-sided according to claim 1, which is characterized in that institute
State the electrode material of electric pulse stimulation electrode site (2), brain electro-detection electrode site (3) and electrochemical detection electrode site (4)
It is the metallic film of good biocompatibility, including gold, platinum, iridium, titanium, thickness 200-300nm is bonded by 20-30nm crome metals
In electrode basement.
3. the miniature brain electrode array chip of a kind of implanted Multifunctional two-sided according to claim 1, which is characterized in that institute
The border circular areas that electric pulse stimulation electrode site (2) is diameter 100um is stated, the brain electro-detection electrode site (3) is diameter
The border circular areas of 20um, the electrochemical detection electrode site (4) are the border circular areas of diameter 50um.
4. the miniature brain electrode array chip of a kind of implanted Multifunctional two-sided according to claim 1, which is characterized in that institute
It states electric pulse stimulation electrode site (2) and brain electro-detection electrode site (3) is spaced, spacing 250um；The Electrochemical Detection
Electrode site (4) and brain electro-detection electrode site (3) are spaced, spacing 300um.
5. the miniature brain electrode array chip of a kind of implanted Multifunctional two-sided according to claim 1, which is characterized in that institute
The material for stating stimulating electrode lead (5), detecting electrode lead (6) and contact conductor interface pad (7) be include that gold, platinum, copper are led
One kind of the good metal of electrical property, thickness 200-300nm are bonded in by 20-30nm crome metals in electrode basement；
The method of the stimulating electrode lead (5) and detecting electrode lead (6) surface insulation is, by magnetron sputtering technique at it
One layer of 200-300nm thickness SiO of uniform sputter above2Insulating layer；
Stimulating electrode lead (5) the width 10um, spacing 5um；Detecting electrode lead (6) the width 5um, spacing 5um；Institute
It states stimulating electrode lead (5) and detecting electrode lead (6) to connect up in the central axes both sides of microelectrode the same face respectively, the electrode
Pin interfaces pad (7) size is 400um × 400um, vertical interval 200um.
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| CN106236089A (en) * | 2016-09-13 | 2016-12-21 | 科斗（苏州）脑机科技有限公司 | A kind of implanted multi-functional microneedle array brain electrode |
| CN108294741B (en) * | 2017-01-12 | 2023-01-20 | 国家纳米科学中心 | Miniature flexible bioelectrode array and preparation method thereof |
| CN107485386B (en) * | 2017-09-21 | 2021-03-19 | 中国科学院电子学研究所 | Intracranial cortical neural information detection electrode, electrode array and preparation method thereof |
| CN108254426A (en) * | 2017-12-15 | 2018-07-06 | 新乡医学院 | It is prepared for dopamine concentration detection miniature electrochemical in animal brain |
| CN108042129A (en) * | 2017-12-29 | 2018-05-18 | 广东省中医院 | A kind of three-dimensional tiny array electrode for being used to detect cardiac muscular tissue's electric signal |
| CN108254414B (en) * | 2018-03-09 | 2024-02-02 | 国家纳米科学中心 | Flexible in-vitro micro-channel microelectrode array integrated chip and preparation method and application thereof |
| CN110478617B (en) * | 2019-08-23 | 2021-01-08 | 中国人民解放军军事科学院国防科技创新研究院 | Probe for deep brain electromagnetic coupling stimulation and electric signal detection |
| CN110772251B (en) * | 2019-10-28 | 2020-11-17 | 浙江大学 | Soft double-sided nerve probe and preparation method thereof |
| CN110935495B (en) * | 2019-11-29 | 2021-02-23 | 中国科学院电子学研究所 | GABA and electrophysiological micro-nano synchronous sensing detection chip and preparation method thereof |
| CN111743537B (en) * | 2020-07-02 | 2023-06-02 | 西北工业大学 | Flexible nerve microelectrode based on oxalis biomimetic structure and preparation method |
| CN111956218B (en) * | 2020-08-10 | 2024-04-16 | 中国科学院上海微系统与信息技术研究所 | Flexible brain electrode with electrochemical and electrophysiological detection functions and preparation method thereof |
| CN111990993B (en) * | 2020-08-28 | 2024-10-15 | 江西脑虎科技有限公司 | Flexible integrated cortical brain electrode and manufacturing method thereof |
| CN112641448B (en) * | 2020-12-18 | 2023-02-24 | 浙江大学 | Flexible magnetic compatible implanted electroencephalogram electrode array and preparation method thereof |
| CN112870562B (en) * | 2021-01-06 | 2022-05-17 | 上海交通大学 | Implanted piezoelectric MEMS ultrasonic transducer and preparation method thereof |
| CN113724920B (en) * | 2021-08-31 | 2022-05-31 | 苏州景昱医疗器械有限公司 | Flexible conductive soft board and manufacturing method thereof, stimulation electrode and manufacturing method thereof |
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| AU2013327731B2 (en) * | 2012-10-03 | 2016-09-15 | Boston Scientific Neuromodulation Corporation | Micro-electrode recording-guided implantation of directional leads |
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| CN101583309A (en) * | 2005-10-07 | 2009-11-18 | 神经连结科技公司 | Modular multichannel microelectrode array and methods of making same |
| CN205252318U (en) * | 2015-12-12 | 2016-05-25 | 西安交通大学 | Little brain electrodes core piece of two -sided many information detection |
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