CN105561469A - Implanted multifunctional double-side micro brain electrode array chip - Google Patents
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Abstract
The invention provides an implanted multifunctional double-side micro brain electrode array chip. Three electric pulse stimulation electrodes, four electrochemical detection electrodes and seven brain electric detection electrodes are distributed on each surface of an electrode pole; the electric pulse stimulation electrodes, the brain electric detection electrodes and the electrochemical detection electrodes are symmetrically distributed on the central axis of the two surfaces of the electrode pole; the electrochemical detection electrodes and the brain electric detection electrodes are connected to electrode lead interface welding discs via detection electrode leads; the electric pulse stimulation electrodes are connected to the electrode lead interface welding discs via stimulation electrode leads; and the electrode lead interface welding discs are symmetrically distributed at the two sides of the central axis of the two surfaces of an electrode handle. The electrodes of different functions are integrated on one chip so that electric pulse stimulation of deep brain tissues can be realized and the brain electric signals and electrochemical signals of the specific areas of the brain can be detected, the chip is suitable for being implanted in the brain for a long time and thus treatment and research of neurological diseases can be assisted.
Description
Technical field
The present invention relates to micro electronmechanical processing technique field and implantation micro-electrode having technical field, particularly the miniature brain electrode array chip of a kind of implanted Multifunctional two-sided.
Background technology
In medical rehabilitation field, the diseases such as treatment parkinsonism, severe epilepsy and various addictions, usually adopt surgical operation near focus, implant brain electrode, and the electricity irritation giving certain frequency, pulsewidth and amplitude are treated.The product of the mainly Medtronic used clinically at present carries out the treatment of lesions located in deep brain (DBS) to patient, although DBS is widely used clinically, its mechanism of action is still not clear at present.For a long time, people utilize patch-clamp, metal microelectrode and glass microelectrode to carry out electro physiology basic research and zoopery at body or in vitro neurocyte.Limit by material and processing technique, the number of channels of these electrodes is less, and the zone of action is limited, and the more single integrated level of function ratio is not high.In recent years along with micro electronmechanical process technology (MEMS) development, emerge micro-brain electrode of multiple material and manufacture technics both at home and abroad successively, certain achievement in research is achieved in DBS field, but most electrode is all the single-side electrode of function singleness, which greatly limits the effect of stimulation of DBS and cause the limitation of signal record.
Nervous system is a complicated system, simply records EEG signals, electrochemical signals or electricity irritation blindly and has all been difficult to substantial breakthrough.There is thousands of neurocyte in the brain of people, between them, transmit the signal of telecommunication and chemical signal by synapse.When with mental sickness such as Deep brain stimulation treatment parkinson, neurocyte electricity physiological signal can be recorded simultaneously and obtain the various dimensions small-signals such as neurotransmitter electrochemical signals such as dopamine, significant to research lesions located in deep brain therapeutic effect.Therefore, research and development one can carry out electric pulse stimulation simultaneously, and the research of brain electrode to DBS of the multi-functional high integration of EEG signals detection and Electrochemical Detection is necessary.
Based on micro electro mechanical system (MEMS) technology (MEMS), by micro-nano technology technology, make rational planning for and layout electrode function region at the electrode bilateral with silica-based being substrate, realize while electric pulse stimulation, detecting EEG signals and electrochemical signals, there are no relevant report.
Summary of the invention
In order to overcome the defect of above-mentioned prior art, the object of the present invention is to provide the miniature brain electrode array chip of a kind of implanted Multifunctional two-sided, this electrode chip is substrate with silica-based, multi-channel electrode site layout is at electrode chip bilateral, can for EEG signals and Electrochemical Detection while carrying out electric pulse stimulation, be applicable to long-term implanting in brain, for the treatment of nervous system disease and research are offered help.
In order to achieve the above object, technical scheme of the present invention is:
The miniature brain electrode array chip of a kind of implanted Multifunctional two-sided, comprise electrode stem 1, each EDS maps of electrode stem 1 has three electric pulse stimulation electrode site, 2, four electrochemical detection electrode sites 4 and seven brain electro-detection electrode site 3; Electric pulse stimulation electrode site 2, brain electro-detection electrode site 3 and electrochemical detection electrode site 4 are symmetrically distributed on the axis in two faces of electrode stem 1; Electrochemical detection electrode site 4 and brain electro-detection electrode site 3 are connected to contact conductor interface pad 7 by detecting electrode lead-in wire 6; Electric pulse stimulation electrode site 2 is connected to contact conductor interface pad 7 by stimulating electrode lead-in wire 5; Contact conductor interface pad 7 is symmetrically distributed in the both sides of the axis in two faces of electrode handle 8, and contact conductor interface pad 7 is divided into cloth 2 groups × 7 on each side of electrode handle 8.
The base material of described electrode stem 1 is monocrystal silicon, mix silicon or soi wafer one of them, the thickness of described electrode stem 1 is 200um, most advanced and sophisticated in 32 degree of angles, electrode stem 1 body width 400-600um, long 8.8mm, electrode stem 1 surface coverage 200-300nm insulating barrier, insulating barrier be silicon dioxide or silicon nitride one of them.
The base material of described electrode handle 8 is monocrystal silicon, mix silicon or soi wafer one of them, the thickness of electrode handle 8 is 200um, long 4mm, wide 2mm, electrode handle 8 surface coverage 200-300nm insulating barrier, insulating barrier be silicon dioxide or silicon nitride one of them.
The electrode material in described electric pulse stimulation electrode site 2, brain electro-detection electrode site 3 and electrochemical detection electrode site 4 is metallic films of good biocompatibility, comprise gold, platinum, iridium, titanium, thickness 200-300nm, is bonded in electrode basement by 20-30nm crome metal; Described electric pulse stimulation electrode site 2 is the border circular areas of diameter 100um, and described brain electro-detection electrode site 3 is the border circular areas of diameter 20um, and described electrochemical detection electrode site 4 is the border circular areas of diameter 50um;
Described electric pulse stimulation electrode site 2 and brain electro-detection electrode site 3 alternately, spacing 250um; Described electrochemical detection electrode site 4 and brain electro-detection electrode site 3 alternately, spacing 300um.
The material of described stimulating electrode lead-in wire 5, detecting electrode lead-in wire 6 and contact conductor interface pad 7 is the one comprising gold, platinum, metal that copper electric conductivity is good, and thickness 200-300nm, is bonded in electrode basement by 20-30nm crome metal;
The go between method of 6 surface insulations of described stimulating electrode lead-in wire 5 and detecting electrode is, by the magnetron sputtering technique thick SiO of uniform sputter one deck 200-300nm in the above
2insulating barrier;
Described stimulating electrode goes between 5 width 10um, spacing 5um; Described detecting electrode goes between 6 width 5um, spacing 5um; Described stimulating electrode lead-in wire 5 and detecting electrode lead-in wire 6 connect up in the both sides, axis of microelectrode the same face respectively, and described contact conductor interface pad 7 size is 400um × 400um, vertical interval 200um.
Meaning of the present invention is: height integrated electric impulse stimulation electrode, brain electro-detection electrode and electrochemical detection electrode on a microelectrode array chip, utilize the difference of electrode material, layout and structure, realize the electric pulse stimulation to nervous system specific region, EEG signals detects and Electrochemical Detection function; The present invention takes into full account sphere of action and the effect of stimulation of electrode stimulating, adopts the mode of two-sided layout electrode, two-sided electric pulse stimulation.
Accompanying drawing explanation
Fig. 1 is the structural representation of the present invention's microelectrode array chip.
Fig. 2 is the cross section structure figure apart from most advanced and sophisticated second impulse stimulation electrode place.
In figure: 1. electrode stem, 2. impulse stimulation electrode site, 3. brain electro-detection electrode site, 4. electrochemical detection electrode site, 5. stimulating electrode lead-in wire, 6. detecting electrode lead-in wire, 7. contact conductor interface pad, 8. electrode handle.
Detailed description of the invention
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
As shown in Figure 1, 2, the miniature brain electrode array chip of a kind of implanted Multifunctional two-sided, comprises electrode stem 1, electric pulse stimulation electrode site 2, brain electro-detection electrode site 3, electrochemical detection electrode site 4, stimulating electrode lead-in wire 5, detecting electrode lead-in wire 6, contact conductor interface pad 7 and electrode handle 8; Each EDS maps of electrode stem 1 has three electric pulse stimulation electrode site, 2, four electrochemical detection electrode sites 4 and seven brain electro-detection electrode site 3; Electric pulse stimulation electrode site 2, brain electro-detection electrode site 3 and electrochemical detection electrode site 4 are symmetrically distributed on the axis in two faces of electrode stem 1; Electrochemical detection electrode site 4 and brain electro-detection electrode site 3 are connected to contact conductor interface pad 7 by detecting electrode lead-in wire 6; Electric pulse stimulation electrode site 2 is connected to contact conductor interface pad 7 by stimulating electrode lead-in wire 5; Contact conductor interface pad 7 is symmetrically distributed in the both sides of the axis in two faces of electrode handle 8, and contact conductor interface pad 7 is divided into cloth 2 groups × 7 on each side of electrode handle 8.
Described electric pulse stimulation electrode site 2, brain electro-detection electrode site 3, electrochemical detection electrode site 4 adopt two-sided Layout processing, be symmetrically distributed in electrode chip both sides, significantly can improve compared with one side layout electrode site and stimulate or the spatial resolution of signals collecting.
Described electric pulse stimulation electrode site 2, brain electro-detection electrode site 3 deposit one deck noble metal nano particles in the above by electro-deposition method, to reduce the impedance of respective electrode site, improve electricity irritation and signals collecting quality.
Described electrochemical detection electrode site 4 is by the concentration for selective enumeration method neurotransmitter dopamine after Electrochemical Modification one deck selective polymerisation thing film and nano-complex.
The base material of described electrode stem 1 is monocrystal silicon, mix silicon or soi wafer one of them, the thickness of described electrode stem 1 is 200um, most advanced and sophisticated in 32 degree of angles, electrode stem 1 body width 400-600um, long 8.8mm, electrode stem 1 surface coverage 200-300nm insulating barrier, insulating barrier be silicon dioxide or silicon nitride one of them;
The base material of described electrode handle 8 is monocrystal silicon, mix silicon or soi wafer one of them, the thickness of electrode handle 8 is 200um, long 4mm, wide 2mm, electrode handle 8 surface coverage 200-300nm insulating barrier, insulating barrier be silicon dioxide or silicon nitride one of them.
The electrode material in described electric pulse stimulation electrode site 2, brain electro-detection electrode site 3 and electrochemical detection electrode site 4 is metallic films of good biocompatibility, comprise gold, platinum, iridium, titanium, thickness 200-300nm, is bonded in electrode basement by 20-30nm crome metal; Described electric pulse stimulation electrode site 2 diameter 100um, described brain electro-detection electrode site 3 diameter 20um, described electrochemical detection electrode site 4 diameter 50um; Described electric pulse stimulation electrode site 2 and brain electro-detection electrode site 3 alternately, spacing 250um; Described electrochemical detection electrode site 4 and brain electro-detection electrode site 3 alternately, spacing 300um.
Described electric pulse stimulation electrode site 2 and brain electro-detection electrode site 3 are alternately, spacing 250um, object is the information that can collect the electric discharge of stimulation electrode sites peripheral nerve unit, and spacing to be set to 250um be that the electrode site of guarantee two kinds of difference in functionalitys does not interfere with each other; Alternately, spacing 300um, advantage to collect two kinds of different signals for described electrochemical detection electrode site 4 and brain electro-detection electrode site 3.
Described electric pulse stimulation electrode site 2, brain electro-detection electrode site 3 deposit one deck noble metal nano particles in the above by electro-deposition method and carry out electrode site finishing.
Described electrochemical detection electrode site 4 is by the concentration for selective enumeration method neurotransmitter dopamine after Electrochemical Modification one deck selective polymerisation thing film and nano-complex.
The material of described stimulating electrode lead-in wire 5, detecting electrode lead-in wire 6 and contact conductor interface pad 7 is the one comprising gold, platinum, metal that copper electric conductivity is good, and thickness 200-300nm, is bonded in electrode basement by 20-30nm crome metal; Described stimulating electrode lead-in wire 5 and detecting electrode go between the thick SiO of 6 surface coverage 200-300nm
2insulating barrier; Described stimulating electrode goes between 5 width 10um, spacing 5um; Described detecting electrode goes between 6 width 5um, spacing 5um; Described stimulating electrode lead-in wire 5 and detecting electrode lead-in wire 6 connect up in the both sides, axis of microelectrode the same face respectively; Described contact conductor interface pad 7 size is 400um × 400um, vertical interval 200um.Stimulating electrode wire widths is 2 times of detecting electrode wire widths, the benefit of such design reduces its resistance, the stimulating current being convenient to the time is input in brain district, and stimulation lead-in wire with detect lead-in wire and be in the layout of both sides, electrode stem axis respectively, its advantage eliminates the impact on the EEG signals detected or electrochemical signals of impulse stimulation electric current;
Operation principle of the present invention is:
The present invention is performed the operation by sphenotresia, is implanted in cerebral cortex or cerebral deep tissue; Microelectrode is connected with external pulse stimulation circuit, EEG signals recording equipment or electrochemical workstation by contact conductor interface pad 7.
For electric pulse stimulation electrode site 2, outside stimulus circuit produces the electric pulse of special parameter, electric pulse stimulation electrode 2 is transmitted to by contact conductor interface pad 7 and stimulating electrode lead-in wire 5, electric pulse stimulation electrode site 2 directly contacts cerebral tissue, applies the electric pulse stimulation of special parameter to brain nervous cell;
For brain electro-detection electrode site 3, neurocyte produces action potential under the condition stimulated, and by brain electro-detection electrode site 3 records electrophysiologicalsignals signals, is sent to outside eeg recording equipment successively through detecting electrode lead-in wire 6 and contact conductor interface pad 7;
For electrochemical detection electrode site 4, neurocyte is release neurotransmitters (as dopamine) catalytic electrochemical coating material under the condition stimulated, cause the current-responsive in electrochemical detection electrode site 4, electric current is sent to electrochemical workstation through detecting electrode lead-in wire 6 and contact conductor interface pad 7.
Claims (7)
1. the miniature brain electrode array chip of implanted Multifunctional two-sided, it is characterized in that, comprise electrode stem (1), electrode stem (1) each EDS maps has three electric pulse stimulation electrode site (2), four electrochemical detection electrode sites (4) and seven brain electro-detection electrode site (3); Electric pulse stimulation electrode site (2), brain electro-detection electrode site (3) and electrochemical detection electrode site (4) are symmetrically distributed on the axis in electrode stem (1) two face; Electrochemical detection electrode site (4) and brain electro-detection electrode site (3) are connected to contact conductor interface pad (7) by detecting electrode lead-in wire (6); Electric pulse stimulation electrode site (2) is connected to contact conductor interface pad (7) by stimulating electrode lead-in wire (5); Contact conductor interface pad (7) is symmetrically distributed in the both sides of the axis in electrode handle (8) two faces, and contact conductor interface pad (7) is divided into cloth 2 groups × 7 on electrode handle (8) each side.
2. the miniature brain electrode array chip of a kind of implanted Multifunctional two-sided according to claim 1, it is characterized in that, the base material of described electrode stem (1) is monocrystal silicon, mix silicon or soi wafer one of them, the thickness of described electrode stem (1) is 200um, most advanced and sophisticated in 32 degree of angles, electrode stem (1) body width 400-600um, long 8.8mm, electrode stem (1) surface coverage 200-300nm insulating barrier, insulating barrier be silicon dioxide or silicon nitride one of them.
3. the miniature brain electrode array chip of a kind of implanted Multifunctional two-sided according to claim 1, it is characterized in that, the base material of described electrode handle (8) is monocrystal silicon, mix silicon or soi wafer one of them, the thickness of electrode handle 8 is 200um, long 4mm, wide 2mm, electrode handle (8) surface coverage 200-300nm insulating barrier, insulating barrier be silicon dioxide or silicon nitride one of them.
4. the miniature brain electrode array chip of a kind of implanted Multifunctional two-sided according to claim 1, it is characterized in that, the electrode material of described electric pulse stimulation electrode site (2), brain electro-detection electrode site (3) and electrochemical detection electrode site (4) is the metallic film of good biocompatibility, comprise gold, platinum, iridium, titanium, thickness 200-300nm, is bonded in electrode basement by 20-30nm crome metal.
5. the miniature brain electrode array chip of a kind of implanted Multifunctional two-sided according to claim 1, it is characterized in that, the border circular areas that described electric pulse stimulation electrode site (2) is diameter 100um, the border circular areas that described brain electro-detection electrode site (3) is diameter 20um, the border circular areas that described electrochemical detection electrode site (4) is diameter 50um.
6. the miniature brain electrode array chip of a kind of implanted Multifunctional two-sided according to claim 1, is characterized in that, described electric pulse stimulation electrode site (2) and brain electro-detection electrode site (3) alternately, spacing 250um; Described electrochemical detection electrode site (4) and brain electro-detection electrode site (3) alternately, spacing 300um.
7. the miniature brain electrode array chip of a kind of implanted Multifunctional two-sided according to claim 1, it is characterized in that, the material of described stimulating electrode lead-in wire (5), detecting electrode lead-in wire (6) and contact conductor interface pad (7) is the one comprising gold, platinum, metal that copper electric conductivity is good, thickness 200-300nm, is bonded in electrode basement by 20-30nm crome metal;
The method of described stimulating electrode lead-in wire (5) and detecting electrode lead-in wire (6) surface insulation is, by the magnetron sputtering technique thick SiO of uniform sputter one deck 200-300nm in the above
2insulating barrier;
Described stimulating electrode lead-in wire (5) width 10um, spacing 5um; Described detecting electrode lead-in wire (6) width 5um, spacing 5um; Described stimulating electrode lead-in wire (5) and detecting electrode lead-in wire (6) connect up in the both sides, axis of microelectrode the same face respectively, and described contact conductor interface pad (7) size is 400um × 400um, vertical interval 200um.
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Cited By (15)
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| CN106236089A (en) * | 2016-09-13 | 2016-12-21 | 科斗（苏州）脑机科技有限公司 | A kind of implanted multi-functional microneedle array brain electrode |
| CN107485386A (en) * | 2017-09-21 | 2017-12-19 | 中国科学院电子学研究所 | Encephalic cortex neural infomation detection electrode, electrod-array and preparation method thereof |
| CN108042129A (en) * | 2017-12-29 | 2018-05-18 | 广东省中医院 | A kind of three-dimensional tiny array electrode for being used to detect cardiac muscular tissue's electric signal |
| CN108254414A (en) * | 2018-03-09 | 2018-07-06 | 国家纳米科学中心 | A kind of flexible in vitro micro- raceway groove microelectrode array integrated chip and its preparation method and application |
| CN108254426A (en) * | 2017-12-15 | 2018-07-06 | 新乡医学院 | It is prepared for dopamine concentration detection miniature electrochemical in animal brain |
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| CN110478617A (en) * | 2019-08-23 | 2019-11-22 | 中国人民解放军军事科学院国防科技创新研究院 | A kind of probe of the coupling of brain deep electromagnetic stimulation and electrical signal detection |
| CN110772251A (en) * | 2019-10-28 | 2020-02-11 | 浙江大学 | Soft double-sided nerve probe and preparation method thereof |
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| CN106236089A (en) * | 2016-09-13 | 2016-12-21 | 科斗（苏州）脑机科技有限公司 | A kind of implanted multi-functional microneedle array brain electrode |
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| CN110772251A (en) * | 2019-10-28 | 2020-02-11 | 浙江大学 | Soft double-sided nerve probe and preparation method thereof |
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| CN111743537A (en) * | 2020-07-02 | 2020-10-09 | 西北工业大学 | Flexible nerve microelectrode based on creeping oxalis bionic structure and preparation method |
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| CN111956218B (en) * | 2020-08-10 | 2024-04-16 | 中国科学院上海微系统与信息技术研究所 | Flexible brain electrode with electrochemical and electrophysiological detection functions and preparation method thereof |
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| CN113724920B (en) * | 2021-08-31 | 2022-05-31 | 苏州景昱医疗器械有限公司 | Flexible conductive soft board and manufacturing method thereof, stimulation electrode and manufacturing method thereof |
| WO2023029085A1 (en) * | 2021-08-31 | 2023-03-09 | 苏州景昱医疗器械有限公司 | Flexible conductive board and manufacturing method therefor, and stimulating electrode and manufacturing method therefor |
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