CN112867808A

CN112867808A - Evaporation deposition system for replacing crucible

Info

Publication number: CN112867808A
Application number: CN201980068082.4A
Authority: CN
Inventors: 金英年
Original assignee: Applied Materials Inc
Current assignee: Applied Materials Inc
Priority date: 2018-10-24
Filing date: 2019-10-21
Publication date: 2021-05-28
Also published as: KR20200046463A; WO2020086424A1

Abstract

Disclosed herein is an evaporation deposition system for replacing a crucible, the evaporation deposition system comprising: a vacuum chamber configured to accommodate a substrate; an evaporation source configured to supply a vapor deposition material to a substrate; a plurality of moving chambers, each configured to move along a track and to accommodate an evaporation source; and a connection chamber configured to connect the moving chambers and the vacuum chamber, wherein a front surface of each of the moving chambers has a first opening through which the vapor deposition material moves into the connection chamber and a first switching valve that opens and closes the first opening.

Description

Evaporation deposition system for replacing crucible

Cross Reference to Related Applications

The present application is based on korean patent application No. 2018-0127647, filed 24.10.2018, the entire contents of which are incorporated herein by reference, and claims the benefit of priority to the application.

Technical Field

The present disclosure relates to an evaporation deposition system for replacing a crucible, and more particularly, to an evaporation deposition system for replacing a crucible by evaporating an organic material, an inorganic material, a metal, or the like to form a thin film on a substrate surface.

Background

The evaporator is an apparatus for forming a thin film on a surface of a substrate such as a wafer for manufacturing a semiconductor, a substrate for manufacturing a Liquid Crystal Display (LCD), a substrate for manufacturing an Organic Light Emitting Diode (OLED), or the like, by using a method such as Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), vapor deposition, or the like.

Further, in the case of a substrate for manufacturing an OLED, a process of forming a thin film on a surface of the substrate by evaporating an organic material, an inorganic material, a metal, or the like is employed in deposition of a deposition material. In the vacuum chamber in which the deposition process is performed, an evaporation source, a glass substrate, a mask, an alignment device, and the like may be provided.

The OLED evaporator that forms a thin film by evaporating a deposition material (evaporation material), which is evaporated to form a thin film on a surface of a substrate, may include a deposition chamber in which a deposition substrate is vertically loaded, a source that is installed inside the deposition chamber and heats and evaporates the deposition material so as to evaporate the deposition material with respect to the substrate.

Further, the source may include an evaporation vessel (crucible) containing the deposition material, a heater heating the evaporation vessel, a pipe coupled to the evaporation vessel, and a plurality of nozzles protruding toward the substrate and communicating with the pipe.

Various problems exist in depositing deposition materials on OLED substrates. As an example, the deposition material is limitedly contained within the evaporation vessel depending on the capacity of the evaporation vessel, wherein the crucible should be replaced several to several tens of times in order to deposit the thin film of the deposition material to a desired level on the large-sized substrate because the capacity of the evaporation vessel is less than the total amount of the deposition material for forming the thin film at the desired level on the large-sized substrate.

The source heats and evaporates the deposition material in the vacuum chamber, but crucible replacement is performed outside the vacuum chamber, and thus it takes a lot of energy and time to alternately take out a plurality of sources several to several tens of times and then reload the sources after crucible replacement.

Disclosure of Invention

In view of the above, it is an object of the present disclosure to provide an evaporation deposition system for replacing crucibles that uses a minimum of sources to deposit thin films on large substrates and facilitates crucible replacement.

According to an embodiment of the present disclosure, there is provided an evaporation deposition system for replacing a crucible, the system comprising: a vacuum chamber configured to accommodate a substrate; an evaporation source configured to supply a vapor deposition material to a substrate; a plurality of moving chambers, each configured to accommodate an evaporation source and to move along a track; and a connection chamber configured to connect the moving chambers and the vacuum chamber, wherein a front surface of each of the moving chambers has a first opening through which the vapor deposition material moves into the connection chamber and a first switching valve that opens and closes the first opening.

The connection chamber has a first inlet through which the moving chamber enters and exits the connection chamber, and a first contact member may be disposed in the first inlet, the first contact member being selectively in contact with an outer surface of the moving chamber.

The connection housing may be respectively coupled to both ends of each of the moving chambers in the moving direction, the plurality of moving chambers may be connected by the connection housing to be integrally movable, the connection chamber has a first inlet through which the moving chambers and the moving housing may pass in and out of the connection chamber, and a first contact member may be disposed in the first inlet, the first contact member being selectively brought into close contact with an outer surface of the connection housing.

Second openings may be provided at both ends of each moving chamber in the moving direction, respectively, and each connection housing has a second on-off valve opening and closing the second openings.

The evaporation source may include: a distribution pipe configured to spray a vapor deposition material through a nozzle; an evaporation crucible coupled to a distribution tube and configured to contain a vapor deposition material; a support movably mounted to a track; and an actuator mounted on the support to raise and lower the evaporation crucible, and the evaporation crucible is accessible and removable through the second opening.

In the moving chamber, a partition wall may be provided in each chamber of the moving chamber between the distribution pipe and the evaporation crucible, the distribution pipe may be coupled to the evaporation crucible through a connection portion passing through the partition wall, and a gate valve (gate valve) may be provided in the connection portion.

The connection chamber has a second inlet facing the front surface of the moving chamber, and a second contact member may be disposed in the second inlet, the second contact member being selectively brought into close contact with the front surface of the moving chamber.

The connection housing may be respectively coupled to both ends of each of the moving chambers in the moving direction, the plurality of moving chambers may be connected by the connection housing to be integrally movable, the connection chamber has a second inlet facing the moving chamber and a front surface of the connection chamber, and a second contact member may be disposed in the second inlet, the second contact chamber being selectively brought into close contact with the moving chamber and the front surface of the connection housing.

The rear surface of each moving chamber has: a third opening through which an evaporation crucible of the evaporation source enters and exits each of the movable chambers; and a third on-off valve that opens and closes the third opening.

The vacuum chamber has: a fourth opening through which the vacuum chamber communicates with the connecting chamber; and a fourth switching valve that opens and closes the fourth opening.

According to the evaporation deposition system for replacing a crucible according to the exemplary embodiment of the present disclosure, a thin film can be deposited on a large-sized substrate using a minimum number of sources and crucible replacement can be facilitated by moving a plurality of moving chambers, each of which accommodates an evaporation source, along a track, and connecting the moving chamber and a vacuum chamber by a connecting chamber.

Drawings

Fig. 1-3 are schematic diagrams of an evaporative deposition system for replacing a crucible, according to an exemplary embodiment of the present disclosure;

FIGS. 4A and 4B are schematic side views of an evaporative deposition system for replacing a crucible according to an exemplary embodiment of the present disclosure;

FIGS. 5-7 are schematic views of an evaporative deposition system for replacing a crucible according to another exemplary embodiment of the present disclosure;

FIGS. 8A and 8B are schematic side views of an evaporative deposition system for replacing a crucible according to another exemplary embodiment of the present disclosure; and

FIG. 9 is a schematic view of an evaporative deposition system for replacing a crucible, according to yet another exemplary embodiment of the present disclosure.

Detailed Description

Hereinafter, exemplary embodiments of the present disclosure will be described in detail with reference to the accompanying drawings, in order to describe the present disclosure in more detail. Like reference numerals refer to like elements throughout the specification.

Fig. 1 to 3 are schematic views of an evaporation deposition system for replacing a crucible according to an exemplary embodiment of the present disclosure, and fig. 4A and 4B are schematic side views of an evaporation deposition system for replacing a crucible according to an exemplary embodiment of the present disclosure.

As shown in fig. 1 to 4, the evaporation deposition system 10 for replacing a crucible according to an exemplary embodiment of the present disclosure is characterized in that a plurality of moving chambers 300 respectively accommodating evaporation sources 200 are selectively connected to a vacuum chamber 100 accommodating a substrate 1, and the evaporation deposition system 10 includes the vacuum chamber 100, the evaporation sources 200, the moving chambers 300, and a connection chamber 400. The vapor deposition system 10 for replacing a crucible according to an exemplary embodiment of the present disclosure may be automatically controlled by a controller (not shown).

As shown in fig. 1 to 3, the vacuum chamber 100 is configured to form a vacuum state therein, and a conveying rail 120 for conveying the substrate 1 is provided in the vacuum chamber 100. Since the conveying rail 120 for conveying the substrate 1 is a well-known technique disclosed in korean patent laid-open publication No. 2018-0005285, a detailed description of the technique will be omitted.

As shown in fig. 1 to 3, the substrate 1 is provided in an upright state in the vacuum chamber 100. In the vacuum chamber 100, a fourth opening is provided in a wall facing the front surface of the substrate 1. The fourth opening is a portion communicating with the connection chamber 400, and is opened or closed by a fourth on-off valve V4. Although no reference symbol is given to the fourth opening, the fourth opening should be understood as a part of the fourth switching valve V4. In fig. 4, the fourth switching valve V4 is omitted from illustration.

Although not shown, a mask and a frame supporting the mask are mounted on the front side of the substrate 1. In the vapor deposition system 10 for replacing a crucible according to the exemplary embodiment of the present disclosure, the vapor deposition material is coated while the substrate 1 moves along the conveying rail 120. Further, additionally or alternatively, in the evaporation deposition system 10 for replacing a crucible according to the exemplary embodiment of the present disclosure, in a state in which the evaporation source 200 is stopped, when the substrate 1 moves along the conveying track 120, the vapor deposition material is coated.

The surface of the substrate 1 is coated with a material composed of a metal material or the like. The metal material may be made of metal, calcium, aluminum, barium, ruthenium, magnesium, silver, or the like.

As shown in fig. 1 to 3, the vacuum chamber 100 is selectively connected or isolated with another chamber (not shown) by a gate valve 110. When the deposition of the deposition material is completed, the gate valve 110 is opened, and the substrate 1 is moved to another chamber along the transfer rail 120 for a subsequent process. Although not shown, the vacuum chamber 100 is formed in a vacuum state by a vacuum pump.

The evaporation source 200 supplies a vapor deposition material to the substrate 1, and is provided in the moving chamber 300. In a state in which the moving chamber 300 is stopped, the evaporation source 200 discharges the vapor deposition material on the front surface of the substrate 1, which moves in the horizontal direction along the conveying rail 120. The evaporation source 200 is configured to include a distribution pipe 210, an evaporation crucible 220, and a support 230.

Fig. 1 to 3 illustrate a type including a pair of distribution pipes 210 as an evaporation source 200 and a pair of evaporation crucibles 220 according to an exemplary embodiment of the present disclosure. For example, the deposition material contained in any one of the pair of evaporation crucibles 220 may be provided with silver (Ag), and the deposition material contained in any one of the crucibles may be provided with magnesium (Mg).

As shown in fig. 4, the distribution pipe 210 is configured to discharge the vapor deposition material through the nozzle 211, and is formed to be long in the longitudinal direction. An inner space, which is long in the longitudinal direction, is formed inside the distribution pipe 210. A plurality of nozzles 211 are formed in the distribution pipe 210 along the length direction.

Although not shown in detail, the distribution pipe 210 may be formed in a multi-layered structure. For example, the distribution pipe 210 may have a multi-layered structure including: a first layer forming a boundary of the interior space and in contact with the vapor deposited material; a second layer in which a heater is installed; a third layer reflecting heat energy of the heater toward the second layer; and a fourth layer forming an outer surface of the distribution pipe 210 and through which the refrigerant flows; and so on.

This multi-layered structure of the distribution pipe 210 forms a structure that maximizes the thermal energy efficiency of the heater. Since the multi-layered structure of the distribution pipe 210 is a well-known technique disclosed in korean patent laid-open nos. 685431 and 928136, a detailed description of the technique will be omitted.

As shown in fig. 4, the evaporation crucible 220 is configured to contain a deposition material (not shown), and is disposed under the distribution pipe 210. Although not shown in detail, the evaporation crucible 220 may have a multi-layer structure. For example, the evaporation crucible 220 may have a multi-layer structure including a first layer in contact with the deposition material, a second layer in which a heater is installed, and a third layer reflecting heat energy of the heater toward the second layer, and so on.

The distribution pipe 210 is coupled to the evaporation crucible 220 by a connection 212. A connection part 212 is formed at the lower end of the distribution pipe 210. The connection portion 212 means a conduit extending from the distribution pipe 210 toward the evaporation crucible 220. A first flange (flange) P1 is formed at an upper end of the evaporation crucible 220, and a second flange P2 is formed at a lower end of the connection portion 212. The connection portion 212 and the evaporation crucible 220 are connected by a flange connection structure. Although not shown, the first and second flanges P1 and P2 may form a coupling force by being fastened by a jig or a bolt.

As shown in fig. 1 to 4, the supporter 230 supports the evaporation crucible 220 and the distribution pipe 210, and is movably mounted to the rail R. Referring to korean patent laid-open publication No. 2018 and 0005285, the supporting member 230 may be installed with a transmission device that forms a conveying force along the rail R.

As shown in fig. 4, the supporter 230 has an actuator 231 that raises the evaporation crucible 220. The actuator 231 is configured to create a force for raising the evaporation crucible 220, and is provided as a hydraulic cylinder or a linear actuator. The actuator 231 forms a structure that raises a load by a hydraulic pressure or a driving force of the motor. A base plate (sealing panel)232 is coupled to the upper end of the load of the actuator 231. In a state in which the evaporation crucible 220 is seated on the upper surface of the seating plate 232, the crucible is raised by the actuator 231. The base plate 232 may be manufactured in the form of a plate. When the evaporation crucible 220 is raised by the actuator 231 in the state shown in fig. 4B, the upper surface of the first flange P1 is in close contact with the lower surface of the second flange P2.

As shown in fig. 1 to 4, the moving chamber 300 is configured to accommodate the evaporation source 200, and moves or stops along the track R from the outside of the vacuum chamber 100. A rail R for conveying the moving chamber 300 is provided on an outer bottom surface of the vacuum chamber 100. The moving chamber 300 is movably mounted to the rail R by the support 230. Since the moving chamber 300 is mounted on the rail R, the moving chamber 300 is spaced apart from the bottom surface.

As shown in fig. 4, in the moving chamber 300, a partition wall 310 is disposed between the distribution pipe 210 and the evaporation crucible 220. The partition wall 310 partitions the inner space of the moving chamber 300 up and down to prevent the gas from moving between the upper space of the distribution pipe 210 and the lower space of the evaporation crucible 220. The distribution pipe 210 is coupled to the evaporation crucible 220 by a connection 212 passing through the partition wall 310. Therefore, it is possible that the gas moves between the upper and lower spaces based on the partition wall 310 only through the distribution pipe 210. The connection portion 212 has a Gate Valve (GV) to prevent the movement of gas. Therefore, when the gate valve GV is closed, the gas movement between the upper space and the lower space based on the partition wall 310 is completely prevented.

As described above, the support 230 may be mounted with a transmission device that forms a conveying force along the rail R. Although not shown, the moving chamber 300 is formed in a vacuum state by a vacuum pump.

As shown in fig. 1 to 3, the connection housings 300A are respectively coupled to both ends of the moving chamber 300 in the moving direction, and the plurality of moving chambers 300 are connected by the connection housings 300A to integrally move along the rail R. The moving chamber 300 and the connection housing 300A are manufactured in the form of a rectangular parallelepiped. Further, the moving chamber 300 and the connection housing 300A are formed to have the same width in the width direction of the rail R. Accordingly, as shown in fig. 1, the moving chamber 300 and the connection housing 300A form a long rectangular parallelepiped shape along the length direction of the rail R in the coupled state. Although not shown, the connection housing 300A may be integrally manufactured with the moving chamber 300.

As shown in fig. 1 to 3, the connection chamber 400 is configured to connect the moving chamber 300 and the vacuum chamber 100, and is coupled to an outer wall surface of the vacuum chamber 100. When the fourth switching valve V4 is opened, the vacuum chamber 100 and the connection chamber 400 are connected through the fourth opening. Although not shown, the connection chamber 400 is formed in a vacuum state by a vacuum pump.

As described above, the rail R for conveying the moving chamber 300 is provided on the outer bottom surface of the vacuum chamber 100. As shown in fig. 4, a rail R is formed to pass through the inside of the connection chamber 400. That is, the rail R is also provided on the inner bottom surface of the connection chamber 400.

As shown in fig. 1 to 4, the connection chamber 400 may have a first inlet through which the moving chamber 300 enters and exits. As described above, the rail R is formed to pass through the inside of the connection chamber 400. Accordingly, the first inlets are respectively provided in the two walls of the connection chamber 400 through which the rail R passes. Although no reference symbol is provided to the first opening, the first opening should be understood as a part of the first contact member D1.

As shown in fig. 4, the first inlet forms a rectangle spaced apart from the top and bottom surfaces of the moving chamber 300, the front surface (surface facing the substrate 1) and the rear surface (surface opposite to the front surface) of the moving chamber 300, respectively. Although the upper portion of the first inlet is not shown in fig. 4, it is understood that the upper and lower portions of the first inlet are substantially symmetrical based on the partition wall 310.

A first contact member D1 selectively coming into close contact with the outer surface of the connection housing 300A is formed at the first inlet. As shown in fig. 4A, the first contact member D1 is configured to selectively seal the connection chamber 400, and in a state in which the moving chamber 300 is stopped, the first contact member D1 is in close contact with the outer surface of the connection housing 300A. When the connection housing 300A is integrally manufactured with the moving chamber 300, the first contact member D1 is in close contact with the outer surface of the moving chamber 300.

As shown in fig. 4B, when the moving chamber 300 moves, the first contact member D1 is spaced apart from the outer surface of the moving chamber 300 and the connection housing 300A. It will be understood that, in fig. 1 and 3, in a state in which the moving chamber 300 is stopped, the first contact member D1 is in close contact with the outer surface of the connection housing 300A. It will be understood that, in fig. 2, the first contact member D1 is spaced apart from the outer surface of the connection housing 300A during the movement of the moving chamber 300. The first contact member D1 is configured to include a side contact member D1A and upper and lower contact members D1B.

The side contact members D1A are configured to be in close contact with both sides of the connection housing 300A, and are disposed on the left and right sides of the first inlet, respectively. Fig. 4A shows a state in which the pair of side contact members D1A are in close contact with the left and right sides of the connection housing 300A, respectively. Fig. 4B illustrates a state in which the pair of side contact members D1A are spaced apart from the left and right sides of the connection housing 300A, respectively.

The side contact member D1A is manufactured in the form of a plate that is long in the longitudinal direction. In the side contact member D1A, a packing for blocking a gap between the side contact member D1A and the connection housing 300A, and a packing for blocking a gap between the side contact member D1A and the connection chamber 400 are installed, respectively. Although not shown, the pair of side contact members D1A are respectively brought into close contact with or spaced apart from the side surface of the connection housing 300A by the actuator 231.

The upper and lower contact members D1B are configured to be in close contact with the upper and lower surfaces of the connection housing 300A, and are disposed on the upper and lower sides of the first inlet, respectively. Fig. 4A illustrates a state in which the upper and lower contact members D1B are in close contact with the bottom of the connection housing 300A. Fig. 4B illustrates a state in which the upper and lower contact members D1B are spaced apart from the bottom of the connection housing 300A. Although the upper and lower contact members D1B provided on the upper side of the first inlet are not shown in fig. 4, the upper and lower contact members D1B may be understood as the same structure as the upper and lower contact members D1B provided on the lower side of the first inlet. The rail R is not provided at a position where the upper and lower contact members D1B are provided.

The upper and lower contact members D1B are manufactured in the form of a plate that is long in the horizontal direction. In the upper and lower contact members D1B, a packing for blocking a gap between the upper and lower contact members D1B and the connection housing 300A, and a packing for blocking a gap between the upper and lower contact members D1B and the connection member 400 are installed, respectively. Although not shown, the pair of upper and lower contact members D1B may be in close contact with or spaced apart from the upper and lower surfaces of the connection housing 300A, respectively, by the actuator 231.

As shown in fig. 1 to 3, a first opening through which a vapor deposition material moves into the connecting chamber 400 is provided on the front side of the moving chamber 300. The first opening is a portion communicating with the connection chamber 400, and is opened or closed by a first on-off valve V1. Although no reference symbol is given to the first opening, the first opening should be understood as a part of the first on-off valve V1. In fig. 4, the first on-off valve V1 is omitted from illustration.

Second openings are formed at both ends of the moving chamber 300 in the moving direction, respectively. The second opening is a portion into and out of which the evaporation crucible 220 enters when the evaporation crucible 220 is replaced. The connection housing 300A has a second on-off valve V2 that opens and closes the second opening. As described above, the connection housings 300A are respectively coupled to both ends of the moving chamber 300 in the moving direction. Therefore, the inner space of the moving chamber 300 is connected or isolated from the outer space by the second switching valve V2.

Hereinafter, a use state of the vapor deposition system 10 for replacing a crucible according to an exemplary embodiment of the present disclosure is described. Hereinafter, in fig. 1 to 3, for easy understanding of the use state, the left moving chamber 300 is referred to as a first moving chamber 300, and the evaporation source 200 disposed in the first moving chamber 300 is referred to as a first evaporation source 200. Further, in fig. 1 to 3, the right moving chamber 300 is referred to as a second moving chamber 300, and the evaporation source 200 disposed in the second moving chamber 300 is referred to as a second evaporation source 200. In addition, in fig. 1 to 3, the left connection housing 300A of the first movement chamber 300 is referred to as a first connection housing 300A, and the right connection housing 300A of the second movement chamber 300 is referred to as a second connection housing 300A.

The vapor deposition system 10 for replacing a crucible according to an exemplary embodiment of the present disclosure may be automatically controlled by a controller (not shown).

As shown in fig. 1 to 3, the moving chamber 300 moves or stops along the rail R from the outside of the vacuum chamber 100. The plurality of moving chambers 300 are connected by a connection housing 300A to integrally move along the rail R. As shown in fig. 2 and 4B, when the moving chamber 300 moves, the first contact member D1 is spaced apart from the outer surface of the moving chamber 300. When the moving chamber 300 moves, the first opening, the second opening, and the fourth opening are closed.

As shown in fig. 1 and 4A, in a state in which the moving chamber 300 is stopped, the first contact member D1 is in close contact with the outer surface of the connection housing 300A on both sides of the first moving chamber 300. When the first contact member D1 seals the connection chamber 400, the vacuum chamber 100 is operated so as to make the inside of the connection chamber 400 in a vacuum state. When the inside of the connection chamber 400 is in a vacuum state, the first and fourth switching valves V1 and V4 of the first moving chamber 300 are opened.

In this state, the deposition material filled in the evaporation crucible 220 is heated by the heater, and the vapor deposition material is discharged from the nozzles 211 of the distribution pipe 210 toward the substrate 1. In a state in which the first evaporation source 200 is stopped, the substrate is coated with the vapor deposition material while the substrate 1 is moved along the conveyance track 120. When the deposition material filled in the evaporation crucible 220 is exhausted, the first switching valve V1 of the first moving chamber 300, the gate valve GV of the first evaporation source 200, and the fourth switching valve V4 are closed. Subsequently, the first contact member D1 is spaced apart from the outer surface of the connection housing 300A on both sides of the first moving chamber 300.

As shown in fig. 2 to 3, the moving chamber 300 moves along the rail R from the outside of the vacuum chamber 100. As shown in fig. 3 and 4A, in a state in which the moving chamber 300 is stopped, the first contact member D1 is in close contact with the outer surface of the connection housing 300A on both sides of the second moving chamber 300. When the first contact member D1 seals the connection chamber 400, the vacuum chamber 100 is operated so as to make the inside of the connection chamber 400 in a vacuum state. When the inside of the connection chamber 400 is in a vacuum state, the first and fourth switching valves V1 and V4 of the second moving chamber 300 are opened.

In this state, the deposition material filled in the evaporation crucible 220 is heated by the heater, and the vapor deposition material is discharged from the nozzles 211 of the distribution pipe 210 toward the substrate 1. In a state in which the second evaporation source 200 is stopped, the substrate 1 is coated with the vapor deposition material while the substrate 1 moves along the conveyance track 120.

At this time, the second switching valve V2 of the first connection housing 300A is opened, and the evaporation crucible 220 of the first evaporation source 200 is replaced. As described above, in the state in which the gate valve GV is closed, the gas movement between the upper space and the lower space based on the partition wall 310 is completely prevented. Therefore, the inflow of the external air is blocked in the upper space of the partition wall 310 during the replacement of the evaporation crucible 220. When the evaporation crucible 220 is replaced, the second switching valve V2 of the first connection housing 300A is closed. Then, the vacuum chamber 100 is operated so that the inside of the first moving chamber 300 is again in a vacuum state.

When the deposition material filled in the evaporation crucible 220 of the second evaporation source 200 is exhausted, the first switching valve V1 of the second moving chamber 300, the gate valve GV of the second evaporation source 200, and the fourth switching valve V4 are closed. Subsequently, the first contact member D1 is spaced apart from the outer surface of the connection housing 300A on both sides of the second moving chamber 300. As shown in fig. 1 and 2, the moving chamber 300 moves along the rail R from the outside of the vacuum chamber 100. Thereafter, the above process is repeated.

As shown in fig. 9, in the evaporation deposition system 30 for replacing a crucible according to still another exemplary embodiment of the present disclosure, the vacuum chamber 100 is provided on both sides based on the rail R. The connection chamber 400 connects the two vacuum chambers 100. The pair of evaporation sources 200 is disposed in the moving chamber 300 to discharge the vapor deposition material toward the two deposition chambers 100.

Fig. 5 to 7 are schematic views of an evaporation deposition system for replacing a crucible according to another exemplary embodiment of the present disclosure, and fig. 8A and 8B are schematic side views of an evaporation deposition system for replacing a crucible according to another exemplary embodiment of the present disclosure.

As shown in fig. 5 to 8, the evaporation deposition system 20 for replacing a crucible according to another exemplary embodiment of the present disclosure is characterized in that a plurality of moving chambers 300 respectively accommodating evaporation sources 200 are selectively connected to a vacuum chamber 100 accommodating a substrate 1, and the evaporation deposition system 20 includes the vacuum chamber 100, the evaporation sources 200, the moving chambers 300, and a connection chamber 400. The vapor deposition system 20 for replacing a crucible according to another exemplary embodiment of the present disclosure may be automatically controlled by a controller (not shown).

As shown in fig. 5 to 7, the vacuum chamber 100 is configured to form a vacuum state therein, and a conveying rail 120 for conveying the substrate 1 is provided in the vacuum chamber 100. Since the conveying rail 120 for conveying the substrate 1 is a well-known technique disclosed in korean patent laid-open publication No. 2018-0005285, a detailed description of the technique will be omitted.

As shown in fig. 5 to 7, the substrate 1 is provided in an upright state in the vacuum chamber 100. In the vacuum chamber 100, a fourth opening is formed in a wall facing the front surface of the substrate 1. The fourth opening is a portion communicating with the connection chamber 400, and is opened or closed by a fourth on-off valve V4. Although no reference symbol is given to the fourth opening, the fourth opening should be understood as a part of the fourth switching valve V4. In fig. 8, the fourth switching valve V4 is omitted from illustration.

Although not shown, a mask and a frame supporting the mask are mounted on the front side of the substrate 1. In the evaporation deposition system 20 for replacing a crucible according to another exemplary embodiment of the present disclosure, in a state in which the evaporation source 200 is stopped, when the substrate 1 moves along the conveying track 120, the substrate 1 is coated with the vapor deposition material.

The surface of the substrate 1 is coated with a deposition material made of a metal material or the like. The metal material may be made of metal, calcium, aluminum, barium, ruthenium, magnesium, silver, or the like.

As shown in fig. 5 to 7, the vacuum chamber 100 is selectively connected or isolated with another chamber (not shown) by a gate valve 110. When the deposition of the deposition material is completed, the gate valve 110 is opened, and the substrate 1 is moved to another chamber along the transfer rail 120 for a subsequent process. Although not shown, the vacuum chamber 100 is formed in a vacuum state by a vacuum pump.

The evaporation source 200 supplies a vapor deposition material to the substrate 1, and is provided in the moving chamber 300. When the moving chamber 300 is stopped, the evaporation source 200 discharges the vapor deposition material on the front surface of the substrate 1, which moves horizontally along the conveying rail 120. The evaporation source 200 includes a distribution pipe 210, an evaporation crucible 220, and a support 230.

Fig. 5 to 7 illustrate a type including a pair of distribution pipes 210 as an evaporation source 200 and a pair of evaporation crucibles 220 according to another exemplary embodiment of the present disclosure. For example, the deposition material contained in any one of the pair of evaporation crucibles 220 may be provided with silver (Ag), and the deposition material contained in the other crucible may be provided with magnesium (Mg).

As shown in fig. 8, the distribution pipe 210 is configured to discharge the vapor deposition material through the nozzle 211, and is formed to be long in the longitudinal direction. An inner space, which is long in the longitudinal direction, is formed inside the distribution pipe 210. A plurality of nozzles 211 are formed in the distribution pipe 210 along the length direction.

As shown in fig. 8, the evaporation crucible 220 is configured to contain a deposition material (not shown), and is disposed under the distribution pipe 210. Although not shown in detail, the evaporation crucible 220 may have a multi-layer structure. For example, the evaporation crucible 220 may have a multi-layer structure including a first layer in contact with the deposition material, a second layer in which a heater is installed, and a third layer reflecting heat energy of the heater toward the second layer, and so on.

The distribution pipe 210 is coupled to the evaporation crucible 220 by a connection 212. A connection part 212 is formed at the lower end of the distribution pipe 210. The connection portion 212 means a conduit extending from the distribution pipe 210 toward the evaporation crucible 220. A first flange P1 is formed at an upper end of the evaporation crucible 220, and a second flange P2 is formed at a lower end of the connection portion 212. The connection portion 212 and the evaporation crucible 220 are connected by a flange connection structure. Although not shown, the first and second flanges P1 and P2 may form a coupling force by being fastened by a jig or a bolt.

As shown in fig. 5 to 8, the supporter 230 supports the evaporation crucible 220 and the distribution pipe 210, and is movably mounted to the rail R. Referring to korean patent laid-open publication No. 2018 and 0005285, the supporting member 230 may be installed with a transmission device that forms a transmission force along the rail (R).

As shown in fig. 8, the supporter 230 has an actuator 231 that raises the evaporation crucible 220. The actuator 231 is configured to create a force for raising the evaporation crucible 220, and is provided as a hydraulic cylinder or a linear actuator. The actuator 231 forms a structure that raises a load by a hydraulic pressure or a driving force of the motor. The base plate 232 is coupled to the upper end of the load of the actuator 231. In a state in which the evaporation crucible 220 is seated on the upper surface of the seating plate 232, the crucible is raised by the actuator 231. The base plate 232 may be manufactured in the form of a plate. When the evaporation crucible 220 is raised by the actuator 231 in the state shown in fig. 8B, the upper surface of the first flange P1 is in close contact with the lower surface of the second flange P2.

As shown in fig. 5 to 8, the moving chamber 300 is configured to accommodate the evaporation source 200, and moves or stops along the track R from the outside of the vacuum chamber 100. A rail (R) for conveying the moving chamber 300 is provided on an outer bottom surface of the vacuum chamber 100. The moving chamber 300 is movably mounted to the rail R by the support 230. Since the moving chamber 300 is mounted on the rail R, the moving chamber 300 is spaced apart from the bottom surface.

As shown in fig. 8, in the moving chamber 300, a partition wall 310 is disposed between the distribution pipe 210 and the evaporation crucible 220. The partition wall 310 partitions the inner space of the moving chamber 300 up and down to prevent the gas from moving between the upper space of the distribution pipe 210 and the lower space of the evaporation crucible 220. The distribution pipe 210 is coupled to the evaporation crucible 220 by a connection 212 passing through the partition wall 310. Therefore, it is possible that the gas moves between the upper and lower spaces based on the partition wall 310 only through the distribution pipe 210. The connection portion 212 has a Gate Valve (GV) to prevent gas movement. Therefore, when the gate valve GV is closed, the gas movement between the upper space and the lower space based on the partition wall 310 is completely prevented.

As shown in fig. 5 to 7, the connection housings 300A are respectively coupled to both ends of the moving chamber 300 in the moving direction, and the plurality of moving chambers 300 are connected by the connection housings 300A to be integrally moved along the rail R. The moving chamber 300 and the connection housing 300A are manufactured in the form of a rectangular parallelepiped. Further, the moving chamber 300 and the connection housing 300A are formed to have the same width in the width direction of the rail R. Accordingly, as shown in fig. 5, the moving chamber 300 and the connection housing 300A form a long rectangular parallelepiped shape along the length direction of the rail R in the coupled state. Although not shown, the connection housing 300A may be integrally manufactured with the moving chamber 300.

As shown in fig. 5 to 7, the connection chamber 400 is configured to connect the moving chamber 300 and the vacuum chamber 100, and is coupled to an outer wall surface of the vacuum chamber 100. When the fourth switching valve V4 is opened, the vacuum chamber 100 and the connection chamber 400 are connected through the fourth opening. Although not shown, the connection chamber 400 is formed in a vacuum state by a vacuum pump.

As shown in fig. 5 to 8, the connection chamber 400 has a second inlet facing the front side of the moving chamber 300. Although no reference symbol is given to the second opening, the second opening should be understood as a part of the second contact member D2.

A second contact member D2 selectively coming into close contact with the moving chamber 300 and the front side of the connection housing 300A is formed at the second inlet. As shown in fig. 8A, the second contact member D2 is configured to selectively seal the connection chamber 400, and in a state in which the moving chamber 300 is stopped, the second contact member D2 is in close contact with the moving chamber 300 and the front side of the connection housing 300A. When the connection housing 300A is integrally manufactured with the moving chamber 300, the second contact member D2 is in close contact with the front side of the moving chamber 300.

As shown in fig. 8B, when the moving chamber 300 moves, the second contact chamber D2 is spaced apart from the moving chamber 300 and the front side of the connection housing 300A. It will be understood that, in fig. 5 and 7, in a state in which the moving chamber 300 is stopped, the second contact member D2 is in close contact with the moving chamber 300 and the front side of the connection housing 300A. It will be understood that, in fig. 6, the second contact member D2 is spaced apart from the moving chamber 300 and the front side of the connection housing 300A during the movement of the moving chamber 300.

Although not shown in detail, the second inlet is formed in a rectangular shape, and the second contact member D2 is formed in a square tube shape. In the second contact member D2, a packing for blocking a gap between the second contact member D2 and the connection housing 300 and a packing for blocking a gap between the second contact member D2 and the connection chamber 400 are installed, respectively. Although not shown, the second contact member D2 is in close contact with or spaced apart from the moving chamber 300 and the front side of the connection housing 300A by the actuator 231.

As shown in fig. 5 to 7, the front surface of the moving chamber 300 has a first opening through which the vapor deposition material moves into the connecting chamber 400. The first opening is a portion communicating with the connection chamber 400, and is opened or closed by a first on-off valve V1. Although no reference symbol is given to the first opening, the first opening should be understood as a part of the first on-off valve V1. In fig. 8, the first on-off valve V1 is omitted from illustration.

As shown in fig. 5 to 8, the third opening is provided at the rear side of the moving chamber 300. The third opening is a portion into and from which the evaporation crucible 220 enters and exits when the evaporation crucible 220 is replaced, and is opened or closed by a third on/off valve V3. Although no reference symbol is given to the third opening, the third opening should be understood as a part of the third on/off valve V3.

Hereinafter, a use state of the evaporation deposition system 20 for replacing a crucible according to another exemplary embodiment of the present disclosure is described. Hereinafter, in fig. 5 to 7, in order to easily understand the use state, the left moving chamber 300 is referred to as a first moving chamber 300, and the evaporation source 200 disposed in the first moving chamber 300 is referred to as a first evaporation source 200. Further, in fig. 5 to 7, the right moving chamber 300 is referred to as a second moving chamber 300, and the evaporation source 200 disposed in the second moving chamber 300 is referred to as a second evaporation source 200. In addition, in fig. 5 to 7, the left connection housing 300A of the first movement chamber 300 is referred to as a first connection housing 300A, and the right connection housing 300A of the second movement chamber 300 is referred to as a second connection housing 300A.

The vapor deposition system 20 for replacing a crucible according to another exemplary embodiment of the present disclosure may be automatically controlled by a controller (not shown).

As shown in fig. 5 to 7, the moving chamber 300 moves or stops along the rail R from the outside of the vacuum chamber 100. The plurality of moving chambers 300 are connected by a connection housing 300A to integrally move along the rail R. As shown in fig. 6 and 8B, when the moving chamber 300 moves, the second contact member D2 is spaced apart from the outer surface of the moving chamber 300. When the moving chamber 300 moves, the first, third, and fourth openings are closed.

As shown in fig. 5 and 8A, in a state in which the moving chamber 300 is stopped, the second contact member D2 is in close contact with the moving chamber 300 and the front side of the connection housing 300A. When the second contact member D2 seals the connection chamber 400, the vacuum chamber 100 is operated so as to make the inside of the connection chamber 400 in a vacuum state. When the inside of the connection chamber 400 is in a vacuum state, the first and fourth switching valves V1 and V4 of the first moving chamber 300 are opened.

In this state, the deposition material filled in the evaporation crucible 220 is heated by the heater, and the vapor deposition material is discharged from the nozzles 211 of the distribution pipe 210 toward the substrate 1. In a state in which the first evaporation source 200 is stopped, the substrate is coated with the vapor deposition material while the substrate 1 is moved along the conveyance track 120. When the deposition material filled in the evaporation crucible 220 is exhausted, the first switching valve V1 of the first moving chamber 300, the gate valve GV of the first evaporation source 200, and the fourth switching valve V4 are closed. Subsequently, the second contact member D2 is spaced apart from the front sides of the first moving chamber 300 and the connection housing 300A.

As shown in fig. 6 to 7, the moving chamber 300 moves along the rail R from the outside of the vacuum chamber 100. As shown in fig. 7 and 8A, in a state in which the moving chamber 300 is stopped, the second contact member D2 is in close contact with the second moving chamber 300 and the front side of the connection housing 300A. When the second contact member D2 seals the connection chamber 400, the vacuum chamber 100 is operated so as to make the inside of the connection chamber 400 in a vacuum state. When the inside of the connection chamber 400 is in a vacuum state, the first and fourth switching valves V1 and V4 of the second moving chamber 300 are opened.

At this time, the third switching valve V3 of the first moving chamber 300 is opened, and the evaporation crucible 220 of the first evaporation source 200 is replaced. As described above, in the state in which the gate valve GV is closed, the gas movement between the upper space and the lower space based on the partition wall 310 is completely prevented. Therefore, in the process of replacing the evaporation crucible 220, the inflow of the outside air is blocked in the upper space based on the partition wall 3100. When the evaporation crucible 220 is replaced, the third switching valve V3 of the first moving chamber 300 is closed. Then, the vacuum chamber 100 is operated so that the inside of the first moving chamber 300 is again in a vacuum state.

When the deposition material filled in the evaporation crucible 220 of the second evaporation source 200 is exhausted, the first switching valve V1 of the second moving chamber 300, the gate valve GV of the second evaporation source 200, and the fourth switching valve V4 are closed. Subsequently, the second contact member D2 is spaced apart from the second moving chamber 300 and the front side of the connection housing 300A. As shown in fig. 5 and 6, the moving chamber 300 moves along the rail R from the outside of the vacuum chamber 100. Thereafter, the above process is repeated.

Although exemplary embodiments of the present disclosure have been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope of the disclosure as defined in the accompanying claims. Accordingly, such modifications, additions and substitutions should also be construed as falling within the scope of the present disclosure.

Claims

1. An evaporative deposition system for replacing a crucible, comprising:

a vacuum chamber configured to accommodate a substrate;

an evaporation source configured to supply a vapor deposition material to the substrate:

a plurality of moving chambers, each configured to move along a track and configured to accommodate the evaporation source; and

a connection chamber configured to connect the moving chamber and the vacuum chamber,

wherein the front surface of each of the moving chambers has: a first opening through which a vapor deposition material moves into the connecting chamber; and a first switching valve that opens and closes the first opening.

2. The vapor deposition system of claim 1,

wherein the connection chamber has a first inlet through which the moving chamber enters and exits the connection chamber, and

wherein a first contact member is provided in the first inlet, the first contact member being selectively brought into close contact with an outer surface of the moving chamber.

3. The vapor deposition system of any one of claims 1 to 2, wherein:

a connection housing coupled to both ends of each of the moving chambers in a moving direction, respectively;

the plurality of moving chambers are connected to integrally move by the connection housing;

the connection chamber has a first inlet through which the moving chamber and the connection housing enter and exit the connection chamber; and

a first contact member is disposed in the first inlet, the first contact member being in close contact with an outer surface of the connection housing.

4. The vapor deposition system of claim 3,

wherein second openings are provided in both end portions of each of the moving chambers in the moving direction, respectively, and

wherein each of the connection housings has a second on-off valve that opens and closes the second opening.

5. The vapor deposition system of claim 4, wherein the evaporation source comprises:

a distribution pipe configured to eject the vapor deposition material through a nozzle;

an evaporation crucible coupled to the distribution tube and configured to contain the vapor deposition material;

a support movably mounted on the track; and

an actuator mounted on the support to raise and lower the evaporation crucible, and

wherein the evaporation crucible enters and exits through the second opening.

6. The vapor deposition system of claim 5, wherein:

a partition wall is provided in each of the moving chambers between the distribution pipe and the evaporation crucible;

the distribution pipe is coupled to the evaporation crucible by a connection through the partition wall, an

A gate valve is disposed in the connecting portion.

7. The vapor deposition system of any one of claims 1 to 6,

wherein the connection chamber has a second inlet facing a front surface of the moving chamber; and

wherein a second contact member is disposed in the second inlet, the second contact member being selectively brought into close contact with the front surface of the moving chamber.

8. The vapor deposition system of any one of claims 1 to 7, wherein:

the connecting chamber has a second inlet facing the moving chamber and the front surface of the connecting chamber; and

a second contact member is disposed in the second inlet, the second contact member being selectively brought into close contact with the moving chamber and the front surface of the connection housing.

9. The evaporative deposition system of any one of claims 1 to 8, wherein a rear surface of each of the mobile chambers has a third opening through which the evaporation crucible of the evaporation source enters and exits each of the mobile chambers; and a third on-off valve that opens and closes the third opening.

10. The vapor deposition system of any one of claims 1 to 9, wherein the vacuum chamber has a fourth opening through which the vacuum chamber communicates with the connecting chamber; and a fourth switching valve that opens and closes the fourth opening.