CN112867574A - 用于清洁真空系统的方法、用于真空处理基板的方法、及用于真空处理基板的设备 - Google Patents
用于清洁真空系统的方法、用于真空处理基板的方法、及用于真空处理基板的设备 Download PDFInfo
- Publication number
- CN112867574A CN112867574A CN201980067814.8A CN201980067814A CN112867574A CN 112867574 A CN112867574 A CN 112867574A CN 201980067814 A CN201980067814 A CN 201980067814A CN 112867574 A CN112867574 A CN 112867574A
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- vacuum
- cleaning
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- plasma source
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- 238000000034 method Methods 0.000 title claims abstract description 129
- 238000004140 cleaning Methods 0.000 title claims abstract description 128
- 239000000758 substrate Substances 0.000 title claims description 60
- 238000012545 processing Methods 0.000 title claims description 41
- 230000008569 process Effects 0.000 claims abstract description 63
- 238000004519 manufacturing process Methods 0.000 claims abstract description 44
- 239000007789 gas Substances 0.000 claims abstract description 40
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000001301 oxygen Substances 0.000 claims abstract description 20
- 229910052786 argon Inorganic materials 0.000 claims abstract description 16
- 239000011368 organic material Substances 0.000 claims description 10
- 238000012423 maintenance Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 6
- 210000002381 plasma Anatomy 0.000 description 84
- 239000000356 contaminant Substances 0.000 description 16
- 238000012546 transfer Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 230000004913 activation Effects 0.000 description 6
- 230000003749 cleanliness Effects 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000012634 fragment Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000003116 impacting effect Effects 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000003795 desorption Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000010407 vacuum cleaning Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000012864 cross contamination Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 210000004180 plasmocyte Anatomy 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
- B08B9/08—Cleaning containers, e.g. tanks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B2209/00—Details of machines or methods for cleaning hollow articles
- B08B2209/08—Details of machines or methods for cleaning containers, e.g. tanks
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/20—Industrial or commercial equipment, e.g. reactors, tubes or engines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/40—Specific cleaning or washing processes
- C11D2111/46—Specific cleaning or washing processes applying energy, e.g. irradiation
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Public Health (AREA)
- Epidemiology (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Toxicology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2019/052253 WO2020156659A1 (fr) | 2019-01-30 | 2019-01-30 | Procédé de nettoyage d'un système à vide, procédé de traitement à vide d'un substrat et appareil de traitement à vide d'un substrat |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112867574A true CN112867574A (zh) | 2021-05-28 |
Family
ID=65268943
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980067814.8A Pending CN112867574A (zh) | 2019-01-30 | 2019-01-30 | 用于清洁真空系统的方法、用于真空处理基板的方法、及用于真空处理基板的设备 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20210391537A1 (fr) |
| JP (2) | JP7239688B2 (fr) |
| KR (1) | KR20210074326A (fr) |
| CN (1) | CN112867574A (fr) |
| TW (1) | TW202045760A (fr) |
| WO (1) | WO2020156659A1 (fr) |
Citations (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10144666A (ja) * | 1996-11-14 | 1998-05-29 | Tokyo Electron Ltd | プラズマ処理装置のクリ−ニング方法 |
| US6432255B1 (en) * | 2000-01-31 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus for enhancing chamber cleaning |
| JP2007284793A (ja) * | 2006-04-19 | 2007-11-01 | Asm Japan Kk | 炭素質膜のセルフクリーニング方法 |
| US20070254112A1 (en) * | 2006-04-26 | 2007-11-01 | Applied Materials, Inc. | Apparatus and method for high utilization of process chambers of a cluster system through staggered plasma cleaning |
| CN101126147A (zh) * | 2006-08-16 | 2008-02-20 | 弗拉基米尔·希里罗夫 | 离子束处理电介质表面的方法及实施该方法的装置 |
| CN101765900A (zh) * | 2007-07-26 | 2010-06-30 | 应用材料股份有限公司 | 清洁基板表面的方法和设备 |
| US20140238438A1 (en) * | 2013-02-26 | 2014-08-28 | Applied Materials Israel Ltd. | Method and system for cleaning a vacuum chamber |
| CN107761050A (zh) * | 2016-08-19 | 2018-03-06 | 合肥欣奕华智能机器有限公司 | 一种掩膜板清洗系统 |
| CN108346561A (zh) * | 2018-02-09 | 2018-07-31 | 信利（惠州）智能显示有限公司 | 栅极绝缘层成膜前的多晶硅层处理方法及处理系统 |
| CN109075030A (zh) * | 2016-05-03 | 2018-12-21 | 应用材料公司 | 用于在等离子体处理腔室中的原位腔室清洁效率提高的等离子体处理工艺 |
| CN109154077A (zh) * | 2017-04-28 | 2019-01-04 | 应用材料公司 | 用于清洁在制造oled装置中使用的真空系统的方法、用于在基板上真空沉积来制造oled装置的方法及用于在基板上真空沉积来制造oled装置的设备 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200410337A (en) * | 2002-12-02 | 2004-06-16 | Au Optronics Corp | Dry cleaning method for plasma reaction chamber |
| WO2005098922A1 (fr) | 2004-03-31 | 2005-10-20 | Hitachi Kokusai Electric Inc. | Methode de fabrication de dispositif a semi-conducteur |
| US7862683B2 (en) * | 2005-12-02 | 2011-01-04 | Tokyo Electron Limited | Chamber dry cleaning |
| US20080142039A1 (en) * | 2006-12-13 | 2008-06-19 | Advanced Technology Materials, Inc. | Removal of nitride deposits |
| JP5219562B2 (ja) | 2007-04-02 | 2013-06-26 | 株式会社日立国際電気 | 基板処理装置、基板処理方法及び半導体装置の製造方法 |
| US20090056743A1 (en) * | 2007-08-31 | 2009-03-05 | Soo Young Choi | Method of cleaning plasma enhanced chemical vapor deposition chamber |
| JP4918452B2 (ja) * | 2007-10-11 | 2012-04-18 | 東京エレクトロン株式会社 | 薄膜形成装置の洗浄方法、薄膜形成方法、薄膜形成装置及びプログラム |
-
2019
- 2019-01-30 CN CN201980067814.8A patent/CN112867574A/zh active Pending
- 2019-01-30 KR KR1020217013871A patent/KR20210074326A/ko not_active Application Discontinuation
- 2019-01-30 US US17/282,280 patent/US20210391537A1/en active Pending
- 2019-01-30 WO PCT/EP2019/052253 patent/WO2020156659A1/fr active Application Filing
- 2019-01-30 JP JP2021518175A patent/JP7239688B2/ja active Active
-
2020
- 2020-01-22 TW TW109102590A patent/TW202045760A/zh unknown
-
2023
- 2023-03-02 JP JP2023031469A patent/JP7445043B2/ja active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10144666A (ja) * | 1996-11-14 | 1998-05-29 | Tokyo Electron Ltd | プラズマ処理装置のクリ−ニング方法 |
| US6432255B1 (en) * | 2000-01-31 | 2002-08-13 | Applied Materials, Inc. | Method and apparatus for enhancing chamber cleaning |
| JP2007284793A (ja) * | 2006-04-19 | 2007-11-01 | Asm Japan Kk | 炭素質膜のセルフクリーニング方法 |
| US20070254112A1 (en) * | 2006-04-26 | 2007-11-01 | Applied Materials, Inc. | Apparatus and method for high utilization of process chambers of a cluster system through staggered plasma cleaning |
| CN101126147A (zh) * | 2006-08-16 | 2008-02-20 | 弗拉基米尔·希里罗夫 | 离子束处理电介质表面的方法及实施该方法的装置 |
| CN101765900A (zh) * | 2007-07-26 | 2010-06-30 | 应用材料股份有限公司 | 清洁基板表面的方法和设备 |
| US20140238438A1 (en) * | 2013-02-26 | 2014-08-28 | Applied Materials Israel Ltd. | Method and system for cleaning a vacuum chamber |
| JP2014165169A (ja) * | 2013-02-26 | 2014-09-08 | Applied Materials Israel Ltd | 真空チャンバをクリーニングする方法及びシステム |
| CN109075030A (zh) * | 2016-05-03 | 2018-12-21 | 应用材料公司 | 用于在等离子体处理腔室中的原位腔室清洁效率提高的等离子体处理工艺 |
| CN107761050A (zh) * | 2016-08-19 | 2018-03-06 | 合肥欣奕华智能机器有限公司 | 一种掩膜板清洗系统 |
| CN109154077A (zh) * | 2017-04-28 | 2019-01-04 | 应用材料公司 | 用于清洁在制造oled装置中使用的真空系统的方法、用于在基板上真空沉积来制造oled装置的方法及用于在基板上真空沉积来制造oled装置的设备 |
| CN108346561A (zh) * | 2018-02-09 | 2018-07-31 | 信利（惠州）智能显示有限公司 | 栅极绝缘层成膜前的多晶硅层处理方法及处理系统 |
Non-Patent Citations (1)
| Title |
|---|
| 上海市机械工程学会热处理专业组: "《真空技术及设备》", 成都：电子科技大学出版社, pages: 139 - 142 * |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2020156659A1 (fr) | 2020-08-06 |
| JP7445043B2 (ja) | 2024-03-06 |
| JP7239688B2 (ja) | 2023-03-14 |
| JP2023078187A (ja) | 2023-06-06 |
| JP2022518090A (ja) | 2022-03-14 |
| TW202045760A (zh) | 2020-12-16 |
| US20210391537A1 (en) | 2021-12-16 |
| KR20210074326A (ko) | 2021-06-21 |
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