CN112864806A - Method for correcting oxidation aperture - Google Patents
Method for correcting oxidation aperture Download PDFInfo
- Publication number
- CN112864806A CN112864806A CN202110050488.9A CN202110050488A CN112864806A CN 112864806 A CN112864806 A CN 112864806A CN 202110050488 A CN202110050488 A CN 202110050488A CN 112864806 A CN112864806 A CN 112864806A
- Authority
- CN
- China
- Prior art keywords
- barrier layer
- oxidation
- diffusion barrier
- oxide
- circular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
The invention relates to a method for correcting the diameter of an oxidation hole, wherein the top view of the oxidation hole in the direction of a (110) crystal face is similar to an ellipse after the oxidation hole is directly oxidized without correction, and the method comprises the following steps: before lateral oxidation, coating a film on the side wall of the circular table-board structure in the direction of rapid oxidation of the crystal face, depositing or reserving the original epitaxial material to form a diffusion barrier layer, and compensating and correcting the difference of the oxidation rate of the side wall in each direction, wherein the compensation and correction mode is that the diffusion barrier layer with an elliptic cylinder formed at the periphery is arranged around a cylindrical platform, and the long axis direction of the diffusion barrier layer is the short axis direction of the uncorrected aperture; and diffusing and oxidizing the side wall of the circular mesa structure to form an oxidation hole. The reason that the shape of the oxidation hole is irregular is found, and the oxidation hole tends to be symmetrical and circular by arranging the diffusion barrier layer, so that the VCSEL can present a circular optical field which tends to be perfect.
Description
Technical Field
The invention relates to the technical field of optical communication, in particular to a manufacturing technology of a VCSEL (vertical cavity surface emitting device), which is a core device in the technical field of optical communication, and particularly relates to a method for correcting an oxidation aperture.
Background
In the technical field of optical communication, a Vertical-Cavity Surface-Emitting Laser (VCSEL), which is a commonly used semiconductor device Laser, is used as a core device for a new generation of optical storage and optical communication applications since birth, and is applied in the fields of optical parallel processing, optical identification, optical interconnection systems, optical storage, and the like. With the improvement of processes and material technologies, the advantages of VCSEL devices in the fields of power consumption, manufacturing cost, integration, heat dissipation, etc. begin to emerge, and VCSEL devices are gradually applied to commercial-grade applications such as industrial heating, environmental monitoring, medical devices, etc. and consumer-grade applications such as 3D sensing, etc. In the future, with the continuous development of the intelligent information world, the VCSEL is widely applied to the fields of consumer electronics 3D imaging, internet of things, data center/cloud computing, automatic driving and the like. Wherein, VCSEL plays more and more important effect in consumer electronics field, and VCSEL can be used to carry out smart mobile phone face identification, unmanned aerial vehicle keeps away barrier, VR/AR, robot, domestic camera etc. of sweeping the floor.
Compared with the traditional laser, the VCSEL has a smaller far-field divergence angle, emits a narrow and round light beam, and is easy to couple with an optical fiber; the threshold current is low; the modulation frequency is high; the single longitudinal and transverse mode works in a wide temperature and current range; the process manufacturing and detection can be completed without cleavage, and the cost is low; and large-scale array and photoelectric integration are easy to realize.
In addition to the design of the epitaxial structure and the chip geometry, the control of the aperture shape and size by the contemporary oxidation process is the most critical in the fabrication process of VCSELs.
At present, three pore diameter manufacturing modes are mainly adopted, the first mode is an air column method, and the method is difficult to reduce the pore diameter and manufacture electrodes on the pore diameter; the second is ion planting method, the aperture formed by this method has no optical limitation effect; the third is the oxide aperture method, the oxide aperture process can achieve the dual effects of optical confinement (the oxide material causes the damage of the resonator length) and current confinement (the insulation of the oxide material), the current confinement effectively confines the carriers to the region where the excitation radiation is to be generated, causing the so-called Population Inversion (Population Inversion) phenomenon, and the optical confinement can limit the excitation radiation region of the resonator in the X-Y space direction.
No matter the application of optical fiber communication or sensing, the light beam emitted by the optical window presents a circular light field, so that the application efficiency can be better at the application end, wherein the application efficiency comprises the improvement of the optical coupling efficiency of an optical chip and an optical fiber in the optical fiber communication or the light intensity and the array density in the application of a sensor. Therefore, in fabricating VCSEL photonic chips, it is best to make the oxide aperture circularly symmetric as much as possible.
In the prior art, the oxidation holes hardly tend to be perfect circles, and most of the oxidation holes are in structures of approximate squares, approximate triangles, approximate polygons and approximate rectangles, and the structures are different according to the crystal orientation of the used substrate.
The methods for controlling the pore size of the oxide mainly include: firstly, the ratio of the diameter of the platform to the diameter of the optical window is reduced as much as possible; secondly, as disclosed in US20070091965a1 patent, a non-circularly symmetric shaped platform is used. Reducing the diameter of the platform has the effect of increasing the bandwidth of the high-frequency laser chip for communication, but also limits the effective space of the upper metal electrode. The use of non-circularly symmetric shaped platforms creates excessive surface area, which can be adversely affected by subsequent passivation of the surface.
Disclosure of Invention
In view of the above, it is necessary to provide a method of correcting the oxide pore diameter that is capable of making the oxide pore tend to a perfect circle.
In order to solve the technical problems, the invention adopts the technical scheme that: a method for modifying the diameter of an oxidized pore that appears elliptical in plan view in the (110) plane direction after direct oxidation without modification, comprising: before lateral oxidation, coating a film on the side wall of the circular table-board structure in the direction of rapid oxidation of the crystal face, depositing or reserving the original epitaxial material to form a diffusion barrier layer, and compensating and correcting the difference of the oxidation rate of the side wall in each direction, wherein the compensation and correction mode is that the diffusion barrier layer with an elliptic cylinder formed at the periphery is arranged around a cylindrical platform, and the long axis direction of the diffusion barrier layer is the short axis direction of the uncorrected aperture; and diffusing and oxidizing the side wall of the mesa structure with the diffusion barrier layer to form an oxidation hole.
Further, the crystal plane is a (110) crystal plane within 15 degrees of the off-angle.
Further, the radius of the outer circle of the circular mesa structure and the oxide layer region is R, the expected radius of the ideal target oxide pore diameter is R, the length of the quasi-elliptical oxide pore in the minor axis of the unmodified direct oxidation is 2a, the length of the quasi-elliptical oxide pore in the minor axis of the unmodified direct oxidation is 2b, the diffusion barrier layer is mainly arranged in the minor axis direction of the unmodified direct oxidation pore diameter, the total length of the original cylindrical mesa is 2RaThe length of the diffusion barrier layer in the original long axis direction is 2Rb,KdDiffusion coefficient of water vapor in diffusion barrier layer, KoThe diffusion coefficient of water vapor in the semiconductor oxide layer, wherein a, b and Ra、RbR and R satisfy:
(R-a)/(R-b)≈1+(d/Kd)/[(R-r)/Ko],
wherein R isa＝R+d，b≡r，Rb≡R；d＝(b-a)*Kd/Ko。
Further, wherein the relationship between R and R satisfies: R/R is more than 1 and less than or equal to 5, and R is less than or equal to 10 um.
Further, the diffusion barrier layer has the same geometric center as the elliptical oxidation-like pores which are not modified to be directly oxidized.
Furthermore, the circular mesa structure defines the barrier layer region by using a photolithography process and is formed by a coating process and an etching process.
Further, the material of the diffusion barrier layer comprises GaAs, AlGaAs, Ga2O3、Al2O3、AlN、BN、Si3N4、SiO2、ZrO2、BCB、PI、SiLKTM、HSQ、MSQ、HOSPTM、
Black 
At least one of (1).
The invention has the beneficial effects that: in the prior art, the reason for the shape of the oxidized pores is not studied, and the invention finds that the crystal planes with different miller indexes have different atomic surface densities and different diffusion speeds, so that the oxidation speed is different. The optical chip is manufactured by using a crystal through epitaxy and chip processing, wherein the crystal has a certain crystal direction, so that different oxidation rates can be generated due to different surface densities and surface energies of the crystal in all directions in an oxidation process, so that the difference of geometric shapes of an oxidation optical window and a mesa structure is caused, and different shapes can be generated due to different crystal orientations in practice. The invention adopts the structure of the circular table top to compensate the different oxidation speeds caused by different diffusion speeds through the additional diffusion barrier layer, so that the speeds in all directions tend to be consistent, further the oxidation holes tend to be perfect circles, and the production efficiency and the coupling efficiency of the subsequent optical coupling process of the optical module are facilitated; the circular symmetry of the light beam can be maintained under the condition of meeting the size of the metal electrode; especially for power chips, the advantage of maintaining a circular optical field can still be obtained under the condition of amplifying the diameter ratio of the platform/the optical window.
Drawings
FIG. 1 is a schematic structural view of an oxide region and a desired target oxide aperture of a circular mesa configuration in accordance with an embodiment of the present invention;
FIG. 2 is a schematic view of a diffusion barrier and an oxide hole according to an embodiment of the present invention;
FIG. 3 is a schematic top view of an unmodified direct oxidized via-like elliptical oxidation in accordance with an embodiment of the present invention;
FIG. 4 is a schematic top view of an oxide layer region and an unmodified direct oxidized via-like ellipse in accordance with an embodiment of the present invention;
FIG. 5 is a schematic representation of the crystal plane of example (110) of the present invention;
fig. 6 is a schematic view showing another direction structure of the diffusion barrier layer according to the embodiment of the present invention.
Description of reference numerals:
10. a circular mesa structure; 20. a diffusion barrier layer; 31. an oxide layer region;
32. an ideal target oxidation pore size; 33. an ellipse-like oxidized pore that is directly oxidized without correction;
40. (110) crystal plane.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the following description is made in detail with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Referring to fig. 1-6, a method for modifying an oxide pore diameter, wherein the oxide pore is directly oxidized without modification and has an ellipse-like top view in a (110) plane direction, the method comprises: before lateral oxidation, coating a film on the side wall of the circular table-board structure 10 in the direction of crystal face rapid oxidation, depositing or reserving the original epitaxial material to form a diffusion barrier layer 20, and compensating and correcting the difference of oxidation rates of the side wall in all directions, wherein the compensation and correction mode is that the diffusion barrier layer 20 with an elliptic cylinder formed at the periphery is arranged around a cylindrical platform, and the major axis direction of the diffusion barrier layer 20 is the minor axis direction of the uncorrected aperture; the sidewall of the mesa structure having the diffusion barrier layer 20 is diffused and oxidized to form an oxidation hole.
In the prior art, the reason for the shape of the oxidized pores is not studied, and the invention finds that the crystal planes with different miller indexes have different atomic surface densities and different diffusion speeds, so that the oxidation speed is different. The optical chip is manufactured by using a crystal through epitaxy and chip processing, wherein the crystal has a certain crystal direction, so that in an oxidation process, different diffusion and oxidation rates are generated due to different surface densities and surface energies of the crystal in all directions, so that the difference of geometric shapes of an oxidation optical window and a mesa structure is caused, and different shapes are generated due to different crystal orientations in practice. The invention adopts the additional diffusion barrier layer 20 to compensate the different oxidation speeds caused by different diffusion speeds in the circular mesa structure 10, so that the speeds in all directions tend to be consistent, further the oxidation holes tend to be perfect circles, and the production efficiency and the light coupling efficiency of the subsequent optical module light coupling process are facilitated; the circular symmetry of the light beam can be maintained under the condition of meeting the size of the metal electrode; especially for power chips, the advantage of maintaining a circular optical field can still be obtained under the condition of amplifying the diameter ratio of the platform/the optical window.
Furthermore, the compensation correction mode is that a diffusion barrier layer of an elliptic cylinder is arranged around the original cylindrical platform and forms a common periphery with the cylindrical platform, and the major axis direction of the whole elliptic cylinder is the minor axis direction of the uncorrected aperture. It will be appreciated that the planar orientation of the circular mesa structure 10 is determined when the substrate is selected, and may also be determined by XRD (X-ray diffraction) self-inspection, and XRD diffraction peaks may be used to determine the crystal orientation conveniently.
Further, the crystal plane is a (110) crystal plane within 15 degrees from the angle of 40.
Crystal plane (crystal plane), i.e. the plane passing through the centre of an atom in the crystal in crystallography. During spontaneous growth, crystals can develop polyhedral shapes consisting of differently oriented planes, the direction of which is called the preferred crystal orientation. The orientation of a crystal plane is not represented by an angle but by a crystal plane index, and the general formula of the crystal plane is (hkl) or { hkl }, wherein the former represents a group of parallel crystal planes; the latter represents all crystal planes in which a family of atoms or molecules are arranged in the exact same order. In the same crystal, the crystal faces with different crystal face indexes { hkl } have different atom distribution conditions and arrangement densities. The (110) plane atom arrangement density is the largest in bcc, (100) plane next to, and (111) plane is the smallest. The difference in the arrangement density of atoms on the crystal plane has a direct influence on the properties of the crystal.
Please refer to the drawings2-4, the radius of the outer circle of the circular mesa structure 10 and the oxide layer region 31 is R, the expected radius of the ideal target oxide pore diameter 32 of the oxide pore is R, the length of the quasi-elliptical oxide pore 33 without modified direct oxidation on the major axis is 2a, the width of the quasi-elliptical oxide pore 33 without modified direct oxidation on the minor axis is 2b, and the length of the diffusion barrier layer 20 on the elliptical column platform is 2RaThe width of the diffusion barrier 20 on the elliptic cylindrical stage is 2Rb,KdDiffusion coefficient of water vapor in diffusion barrier layer, KoThe diffusion coefficient of water vapor in the semiconductor oxide layer, wherein a, b and Ra、RbR and R satisfy:
(R-a)/(R-b)≈1+(d/Kd)/[(R-r)/Ko],
wherein R isa＝R+d，b≡r，Rb≡R；d＝(b-a)*Kd/Ko。
Specifically, please refer to fig. 1, wherein the relationship between R and R satisfies: R/R is more than 1 and less than or equal to 5, and R is less than or equal to 10 um.
By satisfying the above formula, it is possible to compensate for the inconsistency of the oxidation rate in each direction. The unmodified direct oxidation refers to direct lateral oxidation after mesa etching, and a diffusion barrier layer 20 is not arranged, namely the traditional normal process; the provision of the diffusion barrier 20 is a compensating modification of the conventional normal procedure, so that the oxide pores tend to be circular. It can be understood that when the diffusion barrier layer 20 is formed while retaining the original epitaxial material, the diffusion coefficient K of water vapor in the diffusion barrier layer 20dEqual to the diffusion coefficient K of water vapor in the oxide layer of the semiconductor oxide layero。
Referring to fig. 2, the diffusion barrier layer 20 has the same geometric center as the elliptical oxidation-like hole 33 that is not modified to be directly oxidized.
The circular mesa structure 10 is generally cylindrical, but has a layer with a relatively high aluminum content, AlxGa1-xAs (x-0.98)>Al2O3Is relatively fast, thereby causing the outer layer component of a certain layer to become Al2O3The circular mesa structure 10 with the central portion still being AlxGa1-xAs and no diffusion barrier layer 20 provided therein has AlxAs1-x/Al2O3The boundary of (a) is the shape of the aperture.
Generally, the circular mesa structure 10 is formed by etching using a photolithography process to define an etching region.
Preferably, the material of the diffusion barrier layer 20 includes GaAs (gallium arsenide), AlGaAs (aluminum gallium arsenide), Ga2O3(gallium sesquioxide), Al2O3(aluminum oxide), AlN (aluminum nitride), BN (boron nitride), Si3N4(silicon nitride), SiO2(silica), ZrO2(zirconium dioxide), BCB (benzocyclobutene), PI (polyimide), SiLKTM(Trade Mark of the Dow Chemical Company)、HSQ(hydrogen silsesquioxane)、MSQ(methylsilsesquioxane)、HOSPTM(Trade Mark of the Honeywell Company)、
Black 
(Trade Mark of the Applied
) At least one of (1).
Preferably, the diffusion barrier layer 20 is formed by a method including, but not limited to, CVD (Chemical Vapor Deposition), ALD (single atomic layer Deposition), PECVD (plasma enhanced Chemical Vapor Deposition), MOCVD (Metal-organic Chemical Vapor Deposition), Sputtering, Spin-Coating. Simple, and generally includes the necessary baking process. Simply, the diffusion barrier layer may also be formed using the material of the epitaxy itself.
It can be understood that the oxide aperture method VCSEL generally includes the steps of epitaxial growth, p-electrode evaporation stripping, mesa etching, lateral oxidation, secondary mesa etching, n-electrode evaporation stripping, BCB coating and etching, PAD (bonding PAD) coating and stripping, etc. in sequence. Epitaxial growth, i.e. the growth of an epitaxial layer, generally 8-10 microns thick; the p electrode is evaporated and stripped, namely a required film coating area is defined by utilizing a photoetching process, and the film coating process of the annular upper electrode is implemented; mesa etching, namely defining a region to be etched by utilizing a photoetching process to form an active region platform (mesa structure), wherein the steps of p electrode evaporation stripping and mesa etching can be interchanged under certain conditions; lateral oxidation, namely, diffusing and oxidizing the side wall of a source region platform (table structure) by utilizing water vapor in an oxidation furnace to form an oxide insulating layer; etching the secondary mesa to expose the N-type epitaxial layer; evaporating and stripping the n electrode to manufacture an n-type electrode; coating and etching CB (benzocyclobutene) to form a protective layer/insulating layer coating; and manufacturing a PAD bonding PAD. Whereas the diffusion barrier 20 of the present invention is provided before the lateral oxidation.
In summary, the method for correcting the oxide aperture provided by the invention discovers the reason that the shape of the oxide aperture is irregular, and makes the oxide aperture tend to be symmetrical round by arranging the diffusion barrier layer, so that the VCSEL can present a perfect round optical field, which is beneficial to the production efficiency and the coupling efficiency of the subsequent optical module optical coupling process; the circular symmetry of the light beam can be maintained under the condition of meeting the size of the metal electrode; especially for power chips, the advantage of maintaining a circular optical field can still be obtained under the condition of amplifying the diameter ratio of the platform/the optical window.
Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (8)
1. A method for modifying a pore size of an oxide pore that is elliptical in plan view in the (110) plane direction after direct oxidation without modification, the method comprising:
before lateral oxidation, coating a film on the side wall of the circular table-board structure in the direction of rapid oxidation of the crystal face, depositing or reserving the original epitaxial material to form a diffusion barrier layer, and compensating and correcting the difference of the oxidation rate of the side wall in each direction, wherein the compensation and correction mode is that the diffusion barrier layer with an elliptic cylinder formed at the periphery is arranged around a cylindrical platform, and the long axis direction of the diffusion barrier layer is the short axis direction of the uncorrected aperture;
and diffusing and oxidizing the side wall of the mesa structure with the diffusion barrier layer to form an oxidation hole.
2. The method for modifying an oxide pore size as defined in claim 1, wherein said crystal plane is a (110) plane within 15 degrees of a deviation angle.
3. The method of claim 1, wherein the radius of the outer circle of the circular mesa structure and the oxide layer region is R, the desired radius of the ideal target oxide aperture is R, the length of the elliptical-like oxide hole without modification for direct oxidation is 2a in the minor axis, the length of the elliptical-like oxide hole without modification for direct oxidation is 2b in the minor axis, and the diffusion barrier layer is disposed in the minor axis direction of the oxide hole without modification for the total length of the original cylindrical mesa region of 2RaThe length of the diffusion barrier layer in the original long axis direction is 2Rb，KdDiffusion coefficient of water vapor in diffusion barrier layer, KoThe diffusion coefficient of water vapor in the semiconductor oxide layer, wherein d, a, b and Ra、RbR and R satisfy:
(R-a)/(R_b)≈1+(d/Kd)/[(R-r)/Ko]，
wherein R isa＝R+d，b≡r，Rb≡R；d＝(b-a)*Kd/Ko。
4. The method of claim 3, wherein R and R satisfy the following relationship: R/R is more than 1 and less than or equal to 5, and R is less than or equal to 10 um.
5. The method of claim 4, wherein the outer profile of the diffusion barrier layer has the same geometric center as the elliptical-like oxidized pores that are not modified for direct oxidation.
6. The method as claimed in claim 1, wherein the mesa structure is formed by a photolithography process to define the barrier region and a plating process and an etching process.
7. The method as claimed in claim 1, wherein the diffusion barrier layer is made of GaAs, AlGaAs, Ga2O3、Al2O3、AlN、BN、Si3N4、SiO2、ZrO2、BCB、PI、SiLKTM、HSQ、MSQ、HOSPTM、
Black
At least one of (1).
8. The method of claim 1, wherein the diffusion barrier layer is formed by a method including but not limited to CVD, ALD, PECVD, MOCVD, Sputtering, Spin-Coating.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2020111762432 | 2020-10-28 | ||
| CN202011176243.2A CN112018598A (en) | 2020-10-28 | 2020-10-28 | Method for correcting (100) crystal face oxidation aperture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112864806A true CN112864806A (en) | 2021-05-28 |
Family
ID=73528138
Family Applications (5)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011176243.2A Pending CN112018598A (en) | 2020-10-28 | 2020-10-28 | Method for correcting (100) crystal face oxidation aperture |
| CN202110050486.XA Pending CN112864805A (en) | 2020-10-28 | 2021-01-14 | Method for correcting oxidation aperture |
| CN202110048910.7A Pending CN112864803A (en) | 2020-10-28 | 2021-01-14 | Method for correcting oxidation aperture |
| CN202110050480.2A Pending CN112864804A (en) | 2020-10-28 | 2021-01-14 | Method for correcting oxidation aperture |
| CN202110050488.9A Pending CN112864806A (en) | 2020-10-28 | 2021-01-14 | Method for correcting oxidation aperture |
Family Applications Before (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011176243.2A Pending CN112018598A (en) | 2020-10-28 | 2020-10-28 | Method for correcting (100) crystal face oxidation aperture |
| CN202110050486.XA Pending CN112864805A (en) | 2020-10-28 | 2021-01-14 | Method for correcting oxidation aperture |
| CN202110048910.7A Pending CN112864803A (en) | 2020-10-28 | 2021-01-14 | Method for correcting oxidation aperture |
| CN202110050480.2A Pending CN112864804A (en) | 2020-10-28 | 2021-01-14 | Method for correcting oxidation aperture |
Country Status (2)
| Country | Link |
|---|---|
| CN (5) | CN112018598A (en) |
| WO (1) | WO2022088329A1 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112018598A (en) * | 2020-10-28 | 2020-12-01 | 深圳市德明利技术股份有限公司 | Method for correcting (100) crystal face oxidation aperture |
| CN113809635B (en) * | 2021-09-14 | 2022-11-25 | 苏州长瑞光电有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
| CN114204414A (en) * | 2021-11-16 | 2022-03-18 | 深圳市德明利光电有限公司 | VCSEL manufacturing method with controllable optical path, high thermal conductivity and low resistance and VCSEL |
| CN114268020B (en) * | 2021-11-16 | 2023-11-28 | 深圳市嘉敏利光电有限公司 | Al with high refractive index contrast 2 O 3 Al x Ga 1-x As DBR VCSEL manufacturing method |
| CN114530761A (en) * | 2022-02-16 | 2022-05-24 | 中科启迪光电子科技(广州)有限公司 | Vertical cavity surface emitting laser based on novel table top of inclined substrate |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010084207A (en) * | 2000-02-24 | 2001-09-06 | 윤종용 | Vertical cavity surface emitting laser and method for manufacturing it |
| US20070091965A1 (en) * | 2005-10-20 | 2007-04-26 | Furukawa Electric Co., Ltd. | Vertical-cavity surface-emitting semiconductor laser device |
| CN112003124A (en) * | 2020-09-02 | 2020-11-27 | 北京金太光芯科技有限公司 | Vertical cavity surface emitting laser with non-cylindrical platform and preparation method thereof |
| CN112018598A (en) * | 2020-10-28 | 2020-12-01 | 深圳市德明利技术股份有限公司 | Method for correcting (100) crystal face oxidation aperture |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4010095B2 (en) * | 1999-10-01 | 2007-11-21 | 富士ゼロックス株式会社 | Surface emitting semiconductor laser and laser array |
| WO2002084829A1 (en) * | 2001-04-11 | 2002-10-24 | Cielo Communications, Inc. | Long wavelength vertical cavity surface emitting laser |
| JP4184769B2 (en) * | 2002-11-26 | 2008-11-19 | 株式会社東芝 | Surface emitting semiconductor laser and manufacturing method thereof |
| JP2010192650A (en) * | 2009-02-18 | 2010-09-02 | Fuji Xerox Co Ltd | Surface-emitting semiconductor laser, surface-emitting semiconductor laser device, optical transmission apparatus, and optical information processing apparatus |
| JP2011222721A (en) * | 2010-04-08 | 2011-11-04 | Sony Corp | Semiconductor laser |
| CN103050438B (en) * | 2012-12-18 | 2016-08-03 | 深圳深爱半导体股份有限公司 | The lithographic method of contact hole |
| CN103414105A (en) * | 2013-07-13 | 2013-11-27 | 北京工业大学 | Perpendicular cavity surface emitting laser device stable in single transverse mode polarization |
| CN108598866B (en) * | 2018-05-21 | 2020-02-14 | 湖北光安伦科技有限公司 | VCSEL chip array structure and manufacturing method thereof |
-
2020
- 2020-10-28 CN CN202011176243.2A patent/CN112018598A/en active Pending
- 2020-11-24 WO PCT/CN2020/131060 patent/WO2022088329A1/en active Application Filing
-
2021
- 2021-01-14 CN CN202110050486.XA patent/CN112864805A/en active Pending
- 2021-01-14 CN CN202110048910.7A patent/CN112864803A/en active Pending
- 2021-01-14 CN CN202110050480.2A patent/CN112864804A/en active Pending
- 2021-01-14 CN CN202110050488.9A patent/CN112864806A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010084207A (en) * | 2000-02-24 | 2001-09-06 | 윤종용 | Vertical cavity surface emitting laser and method for manufacturing it |
| US20070091965A1 (en) * | 2005-10-20 | 2007-04-26 | Furukawa Electric Co., Ltd. | Vertical-cavity surface-emitting semiconductor laser device |
| CN112003124A (en) * | 2020-09-02 | 2020-11-27 | 北京金太光芯科技有限公司 | Vertical cavity surface emitting laser with non-cylindrical platform and preparation method thereof |
| CN112018598A (en) * | 2020-10-28 | 2020-12-01 | 深圳市德明利技术股份有限公司 | Method for correcting (100) crystal face oxidation aperture |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112864803A (en) | 2021-05-28 |
| CN112018598A (en) | 2020-12-01 |
| CN112864805A (en) | 2021-05-28 |
| CN112864804A (en) | 2021-05-28 |
| WO2022088329A1 (en) | 2022-05-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN112864806A (en) | Method for correcting oxidation aperture | |
| KR100725562B1 (en) | Veritical cavity surface emitting laser diode and method for fabricating the same | |
| US6678307B2 (en) | Semiconductor surface light-emitting device | |
| US6661823B1 (en) | Vertical resonator type surface light emitting semiconductor laser device and fabrication method thereof | |
| JP4184769B2 (en) | Surface emitting semiconductor laser and manufacturing method thereof | |
| JP5326677B2 (en) | Semiconductor laser and manufacturing method thereof | |
| WO2021102722A1 (en) | Single-longitudinal-mode edge-emitting laser with side grating oxidation-confinement structure, and preparation method therefor | |
| WO1999007043A1 (en) | Surface emission semiconductor laser | |
| JP2008053353A (en) | Surface emitting laser array, surface emitting laser element used therefor, and method for manufacturing the array | |
| JP5209010B2 (en) | Semiconductor laser | |
| JP5027647B2 (en) | Embedded heterostructure devices fabricated by single step MOCVD | |
| US7016386B2 (en) | Semiconductor laser device | |
| US8389308B2 (en) | Method for producing surface emitting semiconductor device | |
| JP2004281942A (en) | Surface light emission type semiconductor laser and its manufacturing method | |
| JP2863677B2 (en) | Semiconductor laser and method of manufacturing the same | |
| CN110957635A (en) | VCSEL device for realizing polarization control and preparation method thereof | |
| TWI321885B (en) | Fabrication method of semiconductor luminescent device | |
| CN110752509B (en) | VCSEL unit with asymmetric oxidation structure | |
| WO2020151524A1 (en) | Quantum dot semiconductor optical amplifier and preparation method therefor | |
| CN111900625B (en) | Laser and manufacturing method thereof | |
| JP5087321B2 (en) | Semiconductor light emitting device | |
| JPH06326409A (en) | Surface emission element | |
| US9490608B2 (en) | Electro-optical component | |
| EP4274040A1 (en) | Quantum well structure, chip processing method, chip, and laser | |
| JP5477728B2 (en) | Surface emitting laser array |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210528 |
|
| RJ01 | Rejection of invention patent application after publication |