CN112864287A - Transfer method, micro device array and preparation method thereof - Google Patents
Transfer method, micro device array and preparation method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 54
- 238000012546 transfer Methods 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title abstract description 16
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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Abstract
The invention discloses a transfer method, a micro device array and a preparation method thereof, wherein the micro device array comprises a bearing substrate and micro devices borne on the bearing substrate, a weakening layer is arranged between the micro devices and the bearing substrate, and the weakening layer is configured to be broken under the action of external force acting on the micro device array so as to separate the micro devices from the bearing substrate; the transfer method, the micro device array and the preparation method thereof can directly transfer the micro devices in one step, thereby avoiding the adoption of a temporary substrate, a transfer adhesive material and salient points stamp.
Description
Technical Field
The invention relates to the technical field of display, in particular to a transfer method, a micro device array and a preparation method thereof.
Background
Compared with an OLED display, the micro device display has the advantages of high reliability, high color gamut, high brightness, high transparency and high PPI; and the packaging requirement is low, flexible and seamless splicing display is easier to realize, and the display is a future display with development potential in the future.
Fig. 1 is a flowchart of a conventional transfer method for a micro led. As shown in fig. 1, the conventional transfer method for the micro led has a complicated transfer step, and requires a plurality of materials such as a temporary substrate, a glue material, and bumps, which results in high manufacturing cost.
Therefore, it is desirable to provide a transfer method, a micro device array and a method for manufacturing the same to solve the above problems.
Disclosure of Invention
In order to solve the above problems, the present invention provides a transfer method, a micro device array and a method for manufacturing the same, which can transfer a large amount of micro devices formed on an original substrate to a target substrate or a driving substrate in one step by forming a weakened layer between the micro devices and the original substrate, thereby avoiding the use of a temporary substrate, a transfer paste and bump stamps.
In order to achieve the above purpose, the transfer method, the micro device array and the preparation method thereof adopt the following technical scheme.
The invention provides a transfer method of a micro device, which comprises the following steps: providing a micro device array, wherein the micro device array comprises a bearing substrate and at least one micro device carried on the bearing substrate, and a weakening layer is arranged between the micro device and the bearing substrate and is configured to be broken under the action of external force acting on the micro device array so as to separate the micro device from the bearing substrate; and (3) aligning: aligning and attaching the micro device array and a receiving substrate; and, a transfer step: the transferring step includes: forming the external force for breaking the weakening layer such that the micro device is separated from the carrier substrate and the micro device is held on the receiving substrate.
As a preferred embodiment, the transfer method of the micro device includes the steps of: s1, providing a micro device array, the micro device array including a carrier substrate and at least one micro device carried on the carrier substrate, and having a weakening layer therebetween, the weakening layer being configured to break under an external force applied to the micro device array, so that the micro device is separated from the carrier substrate; s2, alignment step: aligning and attaching the micro device array and a receiving substrate; and S3, a transition step: the transferring step includes: forming the external force for breaking the weakening layer such that the micro device is separated from the carrier substrate and the micro device is held on the receiving substrate.
Further, the transfer method further comprises the following steps: a bonding step: a step of electrically connecting the micro device held on the receiving substrate to the receiving substrate.
Further, the surface of the receiving substrate has an array of bonding bumps thereon, then: in the alignment step: aligning an electrode of the micro device with the bonding bump; in the transferring step: adhering electrodes of the micro device to the bonding bumps to hold the micro device on the receiving substrate; in the joining step: and welding the electrode of the micro device on the bonding bump.
The invention provides a micro device array, which comprises a bearing substrate and at least one micro device borne on the bearing substrate, wherein: the micro devices are separated from the carrier substrate by a weakening layer between the micro devices and the carrier substrate, the weakening layer being configured to break under an external force applied to the array of micro devices.
Further, the weakening layer comprises a hollow portion and a hollow portion for the support portion and defined by the support portion; the support portion is configured to break under the external force acting on the array of micro devices, so that the micro devices are separated from the carrier substrate.
Further, the supporting part is of a network structure, a strip-shaped structure arranged in an array, a cross-shaped structure or a rectangular frame structure.
Further, the micro device comprises a buffer layer, wherein the buffer layer is provided with a first surface which is in contact with the bearing substrate; the first surface is provided with a convex structure abutting against the bearing substrate and an opening array surrounded by the convex structure; the opening array forms the cavity portion, the protruding structure forms the supporting portion, and the first surface is formed with the weakened layer.
Further, the bearing substrate is provided with an insulating layer on the surface of the bearing substrate, which is in contact with the buffer layer; the supporting part of the weakening layer penetrates through the thickness of the insulating layer to be abutted to the bearing substrate, and the cavity part of the weakening layer covers the insulating layer in an orthographic projection of the bearing substrate.
Further, the micro device is a micro LED device, the micro LED device including: the first semiconductor layer, the multiple quantum well layer and the second semiconductor layer are sequentially laminated on the surface, away from the bearing substrate, of the buffer layer; a first electrode on a surface of the first semiconductor layer facing away from the buffer layer; and a second electrode on a surface of the second semiconductor layer facing away from the buffer layer.
The invention also provides a preparation method of the micro device array, wherein the micro device array comprises a bearing substrate and at least one micro device arranged on the bearing substrate, and the preparation method is characterized by comprising the following steps: preparing a graphical substrate layer on a bearing substrate, wherein the outer surface of the graphical substrate layer is provided with a graphical sacrificial layer; preparing a multilayer epitaxial layer for preparing the micro device on the bearing substrate provided with the patterned substrate layer, wherein the epitaxial layer structure comprises a buffer layer, a first semiconductor layer, a multi-quantum well layer and a second semiconductor layer which are sequentially stacked, and the first surface of the buffer layer covers the patterned substrate layer and the bearing substrate; etching the multilayer epitaxial layer to expose the multiple quantum well layer; and performing etching treatment on the patterned sacrificial layer so that the weakening layer is formed on the first surface of the buffer layer.
Further, the preparation method further comprises the following steps: a step of fabricating a first electrode and a second electrode on the multilayer epitaxial layer to obtain a micro device, wherein: the first electrode is in contact with the first semiconductor layer, and the second electrode is in contact with the second semiconductor layer.
Further, the patterned substrate layer is obtained in the following way: preparing a silicon-containing material layer on the bearing substrate and patterning the silicon-containing material layer; and carrying out oxidation treatment on the silicon-containing material layer formed on the bearing substrate to obtain the patterned substrate layer.
The transfer method, the micro device array and the preparation method thereof have the following beneficial effects:
the micro device array of the invention can separate the micro device from the bearing substrate by utilizing the external force acted on the micro device array through forming the weakening layer between the micro device and the bearing substrate, thereby simplifying the transferring or separating steps of the prior micro device, reducing the use of a temporary substrate, a transferring adhesive material or a bump stamp and reducing the transferring cost.
According to the transfer method, the weakening layer is arranged between the micro device and the bearing substrate, so that a plurality of micro devices can be directly transferred to the TFT substrate through alignment and pressing of the micro device array and the TFT substrate, the steps and the manufacturing process of the conventional micro device transfer method can be simplified, the transfer efficiency is improved, the use of a temporary substrate, a transfer adhesive material or a bump stamp can be reduced, and the transfer cost can be reduced.
The preparation method of the micro device array can form the weakening layer in the process of preparing the micro device through the preparation and the etching of the graphical substrate layer so as to obtain the micro device array, and meanwhile, the preparation method has the advantage of saving the process.
Drawings
The technical solution and other advantages of the present invention will become apparent from the following detailed description of specific embodiments of the present invention, which is to be read in connection with the accompanying drawings.
Fig. 1 is a flow chart of a conventional micro device transfer method.
Fig. 2 is a schematic structural diagram of an array of micro devices according to the present invention.
Fig. 3A to 3D are schematic views illustrating a transfer process of the micro device transfer method according to the present invention.
Fig. 4A-4C are schematic process flow diagrams of an embodiment of a method for fabricating a micro device array.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
The following disclosure provides many different embodiments or examples for implementing different features of the invention. To simplify the disclosure of the present invention, the components and arrangements of specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or letters in the various examples, such repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present invention provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or uses of other materials.
Fig. 2 is a schematic structural diagram of an array of micro devices according to the present invention. As shown in fig. 2, the present invention provides a micro device array, which includes a carrier substrate 100 and at least one micro device 200 located on the carrier substrate 100.
As shown in fig. 2, a weakening layer 201 is disposed between each of the micro devices 200 and the carrier substrate 100, and the weakening layer 201 is configured to be broken by an external force applied to the array of micro devices, so that the micro devices 200 are separated from the carrier substrate 100.
To this end, the micro device array of the present invention can break the weakened layer 201 by applying or generating the external force F on the micro device array, thereby separating the micro devices 200 from the carrier substrate 100.
Specifically, the carrier substrate 100 is a growth substrate (or original substrate) for preparing the micro device 200. Wherein the growth substrate is a substrate on which the micro device 200 is manufactured or grown, and not another temporary substrate or an intermediate substrate onto which the micro device 200 has been transferred. That is, the micro device 200 is directly fabricated on the carrier substrate 100. For example, the array of micro devices is obtained by directly forming epitaxial layers for forming the micro devices 200 on the carrier substrate 100 and patterning the epitaxial layers.
It is clear that the array of micro devices according to the invention can be used to carry out the direct transfer of the micro devices 200 produced on a growth substrate (original substrate) onto a receiving substrate. The receiving substrate may be an array substrate, or other type of driving substrate.
In the present invention, the specific material of the carrier substrate 100 is not limited, and the original substrate 10 may be AlO, SiC, GaAs, Si, AlGaInP, or the like. For example, in the present embodiment, the carrier substrate 100 may be a sapphire substrate with good epitaxial quality.
As shown in fig. 2, the weakening layer 201 includes a support 2011 and a hollow 2012 defined by the support 2011, wherein the support 2011 is configured to break under the external force applied to the micro device array, so that the micro device 200 is separated from the carrier substrate 100.
Specifically, the support 2011 may be, but not limited to, a network structure, a strip structure arranged in an array, a cross structure, or a rectangular frame structure. For example, in the present embodiment, the support 2011 has a network structure. In other embodiments, the supporting portion 2011 may be an array of long bars.
That is, the present invention does not limit the specific shape, size, or distribution of the supporting portion 2011 and the hollow portion 2012. As long as the configuration of the hollow portion 2012 and the support portion 2011 is reasonable, the weakened layer 201 can be broken under the action of the external force F, and the micro device 200 can be separated from the carrier substrate 100.
Specifically, the weakening layer 201 may be a layer of the micro device 200 or the carrier substrate 100 or a partial thickness region of the layer, or may be a layer of the carrier substrate 100 or a partial thickness region of the layer. The invention is not limited in this regard. For example, in the present embodiment, the weakening layer 201 is formed by the buffer layer 210 of the micro device 200.
As shown in fig. 2, the micro device 200 has a buffer layer 210 contacting the carrier substrate 100, and the buffer layer 210 is formed on a surface of the buffer layer 210 facing the carrier substrate 100. The weakening layer 201 is formed on a surface of the buffer layer 210 contacting the carrier substrate 100. In other words, a weakening layer 201 is formed on a surface of the buffer layer 210 contacting the carrier substrate 100.
In a specific implementation, the buffer layer 210 is made of GaN or AlN, and the protection layer 280 is mainly any one of SiO, SiN, sion x, and AlO.
As shown in fig. 2, the carrier substrate 100 has an insulating layer 110 on a surface thereof contacting the buffer layer 210. The supporting portion 2011 of the weakening layer 201 penetrates through the thickness of the insulating layer 110 to abut against the carrier substrate 100, and the cavity 2012 of the weakening layer 201 covers the insulating layer 110 in the orthographic projection of the carrier substrate 100.
In a specific implementation, the insulating layer 110 may be a silicon-containing material layer.
As shown in fig. 2, the Micro device 200 is a Micro light emitting diode (Micro LED). The micro device 200 further includes a first semiconductor layer 220, a multiple quantum well layer 230, a second semiconductor layer 240, a diffusion layer 250, a first electrode 270, a second electrode 260, and a protection layer 280.
With reference to fig. 2, the first semiconductor layer 220 is disposed on the buffer layer 210 and covers the buffer layer 210; the first electrode 270 and the mqw layer 230 are disposed on the first semiconductor layer 220 at intervals; the second semiconductor layer 240 is disposed on the mqw layer 230 and covers the mqw layer 230, and the second electrode 260 is disposed on the mqw layer 230; the protection layer 280 is disposed on the mqw layer 230 and covers the first electrode 270, the second electrode 260, the first semiconductor layer 220, the second semiconductor layer 240, and the mqw layer 230; and, a first via hole and a second via hole are formed on the protection layer 280, and the first electrode 270 and the second electrode 260 are exposed by the first via hole and the second via hole, respectively.
In a specific implementation, the first electrode 270 is an N electrode or a P electrode, and the second electrode 260 is a P electrode or an N electrode, respectively.
The specific materials of the first semiconductor layer 220 and the second semiconductor layer 240 are not limited in the present invention, and the first semiconductor layer 220 may be N-type GaN, P-type GaN, other GaAs materials, GaP materials, or the like. Correspondingly, the second semiconductor layer 240 may be P-type GaN, N-type GaN, or other GaAs material, GaP material, or the like. For convenience of illustration in this embodiment, optionally, the first semiconductor layer 220 is N-type GaN, and the second semiconductor layer 240 is P-type GaN.
In order to improve the conductive performance and the light emitting efficiency, the micro device 200 in this embodiment further includes a diffusion layer 250, where the diffusion layer 250 is disposed between the second semiconductor layer 240 and the second electrode 260 and covers the second semiconductor layer 240. The diffusion layer 250 is made of a transparent or semi-transparent conductive material, such as, but not limited to, ITO.
It should be understood that: the Micro device 200 of the present invention is not limited to Micro light emitting diodes (Micro LEDs) and certain embodiments may also be applied to other Micro semiconductor devices designed in such a way as to perform a predetermined electronic function (e.g., diode, transistor, integrated circuit) or photonic function (LED, laser) in a controlled manner.
The invention also does not limit the specific structure of the Micro LED. For example, in this embodiment, the Micro LEDs have the same-side electrode structure. In other embodiments, the Micro LED may also be a vertical electrode structure.
Specifically, the carrier substrate 100 is a raw substrate for preparing the micro device 200. Wherein the as-grown substrate is a substrate on which the micro device 200 is fabricated or grown, and not another temporary substrate or temporary base to which the micro device 200 has been transferred. That is, the micro device 200 is directly fabricated on the carrier substrate 100. For example, the micro device array may be obtained by directly forming and patterning various film layers for constituting the micro devices 200 on the carrier substrate 100.
As shown in fig. 2, the micro device 200 is disposed on the carrier substrate 100, and a weakening layer 201 is disposed between the micro device 200 and the carrier substrate 100. Wherein the weakening layer 201 comprises a support 2011 and a hollow 2012 defined by the support 2011, and the support 2011 is configured to break when an external force is applied to the array of micro devices, so that the micro devices 200 are separated from the carrier substrate 100.
Specifically, the support 2011 may be, but not limited to, a network structure, a strip structure arranged in an array, a cross structure, or a rectangular frame structure. For example, in the present embodiment, the support 2011 has a network structure. In other embodiments, the supporting portion 2011 may be an array of long bars.
Specifically, the Micro device 200 is a Micro LED device, i.e., a Micro light emitting diode (Micro LED). It should be understood that embodiments of the present invention are not so limited and that certain embodiments may also be applicable to other miniature semiconductor devices designed in such a way as to perform a predetermined electronic function (e.g., diode, transistor, integrated circuit) or photonic function (LED, laser) in a controlled manner.
Furthermore, the present invention does not limit the specific structure of the Micro LED, for example, in the embodiment, the Micro LED has the same side electrode structure. In other embodiments, the Micro LED may also be a vertical electrode structure.
Fig. 3A to 3D are schematic views illustrating a transfer process of the micro device transfer method according to the present invention. As shown in fig. 3A to 3D, the transfer method includes the steps of:
a step of providing an array of micro devices in which: a weakening layer is arranged between each micro device and the bearing substrate, and the weakening layer is configured to be broken under the action of external force acting on the micro device array so that the micro devices are separated from the bearing substrate;
and (3) aligning: aligning and attaching the micro device array and a receiving substrate; and the number of the first and second groups,
a transfer step: the transferring step includes: forming the external force for breaking the weakening layer such that the micro device is separated from the carrier substrate and the micro device is held on the receiving substrate.
Obviously, the micro device transfer method of the present invention can realize one-step mass transfer of the micro device 200 by using the micro device array of the present invention, thereby simplifying the steps and processes of the current micro device transfer method and improving the transfer efficiency; meanwhile, the use of a temporary substrate or a temporary substrate, a transfer adhesive material or a bump stamp can be reduced, so that the transfer cost can be reduced.
Meanwhile, it should be noted that the present invention does not limit the type, specific structure or manufacturing process of the micro device array, nor the arrangement of the micro devices 200 on the carrier substrate 100. That is, in the implementation, as long as the specific configuration of the micro device array is proper, the weakening layer 201 can be ensured to be broken by an external force, and the micro devices 200 can be ensured to be separated from the carrier substrate 100.
Specifically, the receiving substrate 300 has bonding bumps 310 arranged in an array on the surface thereof, and then: in the aligning step, the electrodes of the micro device 200 are aligned with the bonding bumps 310; in the transfer step, the electrodes of the micro device 200 are adhered to the bonding bumps 310 to hold the micro device 200 on the receiving substrate 300.
Specifically, the receiving substrate 300 is an array substrate. When the receiving substrate 300 is an array substrate, the transferring method further includes the steps of: a bonding step: a step of electrically connecting the micro device 200 held on the receiving substrate 300 to the receiving substrate 300. For example, in the joining step: the electrodes of the micro device 200 are soldered to the bonding bumps 310.
As a preferred embodiment, the transfer method of the present invention can be used to transfer the micro device 200 grown on an original substrate or a growth substrate directly to an array substrate.
As shown in fig. 3A to 3D, in the present embodiment, the transferring method includes the following steps:
s1, a step of providing an array of micro devices, in which: a weakening layer is arranged between each micro device and the bearing substrate, and the weakening layer is configured to be broken under the action of external force acting on the micro device array so that the micro devices are separated from the bearing substrate;
s2, alignment step: aligning and attaching the micro device array and a receiving substrate; and the number of the first and second groups,
s3, transition step: the transferring step includes: forming the external force for breaking the weakening layer such that the micro device is separated from the carrier substrate and the micro device is retained on the receiving substrate; and the number of the first and second groups,
s4, a joining step: a step of electrically connecting the micro device held on the receiving substrate to the receiving substrate.
As shown in fig. 3A, the array of micro devices according to the present invention is obtained. As shown in fig. 3A, in the present embodiment, the array of micro devices is different from the array of micro devices shown in fig. 2 in the number of micro devices 200. For a detailed description of the micro device array shown in fig. 3A, please refer to the above, which is not repeated herein. It can be seen that the array of micro devices of the present invention can be used for transfer by the transfer method of the present invention.
As shown in fig. 3B, the array of micro devices is aligned with a receiving substrate 300 and the micro devices 200 to be transferred are brought into contact with the receiving substrate 300.
For example, as shown in fig. 3B, in the present embodiment, the receiving substrate 300 is an array substrate, and the surface of the array substrate has bonding bumps 310 arranged in an array, such that the first electrode 270 and the second electrode 260 of the micro device 200 are aligned with the bonding bumps 310, respectively.
As shown in fig. 3C, the micro device 200 is separated from the carrier substrate 100 by forming the external force F for breaking the weakened layer 201; and holds the micro device 200 on the receiving substrate 300.
In a specific implementation, the external force F may be formed first to separate the micro device 200 from the carrier substrate 100, and then the micro device 200 separated from the carrier substrate 100 is held on the receiving substrate 300. Alternatively, the micro device 200 may be held on the receiving substrate 300; the external force F is then generated such that the micro device 200 is released from the carrier substrate 100.
Obviously, by forming the weakening layer 201 between the micro device 200 and the carrier substrate 100, the support 2011 is broken by an external force F, so that a huge amount of transfer of the micro device 200 can be realized, the process is simple, and the process cost can be effectively reduced.
Preferably, in the transfer step S2, the micro device 200 detached from the carrier substrate 100 is held on the receiving substrate 300 by a layer of adhesive material positioned between the receiving substrate 300 and the micro device 200. For example, the micro device 200 can be adhered to the receiving substrate 300 by forming a layer of adhesive material on the electrodes of the micro device 200 or the receiving substrate 300.
In particular implementations, the external force F may be applied directly to the array of micro devices or through the receiving substrate 300.
Preferably, in the present embodiment, the external force F is applied directly to the array of micro devices, as shown in fig. 3C.
As shown in fig. 3D, in the step S4, the micro device 200 transferred to the receiving substrate 300 is bonded and electrically connected to the receiving substrate 300.
In particular, the electrodes of the micro device 200 may be soldered to the receiving substrate 300 through a thermocompression process.
The invention also provides a preparation method of the micro device array, the micro device array comprises a bearing substrate and at least one micro device arranged on the bearing substrate, and the preparation method comprises the following steps:
a step of preparing a weakened layer between the micro devices and the carrier substrate, wherein the weakened layer is configured to fracture under an external force applied to the array of micro devices such that the micro devices are separated from the carrier substrate.
It is apparent that the array of micro devices according to the present invention can be manufactured using the method for manufacturing the array of micro devices according to the present invention.
Fig. 4A-4C are schematic process flow diagrams of an embodiment of a method for fabricating a micro device array. As shown in fig. 4A to 4C, in this embodiment, the method for manufacturing the micro device array includes the following steps:
s41, preparing a graphical substrate layer on a bearing substrate, wherein the outer surface of the graphical substrate layer is provided with a graphical sacrificial layer;
s42, preparing a multilayer epitaxial layer for preparing the micro device on the bearing substrate with the patterned substrate layer, wherein the epitaxial layer structure comprises a buffer layer, a first semiconductor layer, a multiple quantum well layer and a second semiconductor layer which are sequentially stacked, and the first surface of the buffer layer covers the patterned substrate layer and the bearing substrate;
s43, etching the multilayer epitaxial layer to expose the multiple quantum well layer;
s44, etching the patterned sacrificial layer to form the weakening layer on the first surface of the buffer layer; and the number of the first and second groups,
s45, a step of fabricating a first electrode and a second electrode on the multi-layer epitaxial layer to obtain a micro device, wherein: the first electrode is in contact with the first semiconductor layer, and the second electrode is in contact with the second semiconductor layer.
As shown in fig. 4A, through the step S41, a patterned substrate layer 101 is obtained on the carrier substrate 100, and the patterned substrate layer 101 is used for forming the weakening layer 201 subsequently.
Specifically, the patterned substrate layer 101 includes a pattern region and a hollow region exposing the carrier substrate 100. In particular implementation, the shape, size or pattern of the hollow area and the pattern area of the patterned substrate 101 may be controlled to control the shape or size of the supporting portion 2011 and the hollow portion 2012 of the subsequent weakening layer 201.
For example, as shown in fig. 4A, in the present embodiment, the pattern region of the patterned substrate layer 101 includes a plurality of protrusions arranged in an array, and the protrusions may be of a truncated pyramid type, a triangular prism type, or a quadrangular prism type. In other embodiments, the protrusions may also be other regular or irregular polygonal columns, which is not limited in this respect.
In particular, the patterned substrate layer 101 may be obtained by: firstly, preparing a silicon-containing material layer on the substrate bearing substrate 100 and carrying out patterning treatment on the silicon-containing material layer to obtain a patterned silicon-containing material layer 11; then, the patterned silicon-containing material layer 11 is subjected to an oxidation treatment to obtain the patterned substrate layer 101.
As shown in fig. 4A, the patterned substrate layer 101 includes an etching stop layer 110 disposed on the carrier substrate 100 and a sacrificial layer 111 covering the etching stop layer 110. The sacrificial layer 111 can be removed in a subsequent process to form the hollow portion 2012 of the weakened layer 201, and the etching stop layer 110 correspondingly forms the insulating layer 110.
For example, in the present embodiment, the silicon-containing material layer is a silicon layer, the etch stop layer 110 is correspondingly a silicon layer, and the sacrificial layer 111 is SiO2。
As shown in fig. 4B, a multilayer epitaxial layer is prepared on the carrier substrate 100 formed with the patterned substrate layer 101, and the multilayer epitaxial layer sequentially includes a buffer layer 210, a first semiconductor layer 220, a multiple quantum well layer 230, and a second semiconductor layer 240.
As shown in fig. 4A, the buffer layer 210 is formed on the patterned substrate layer 101, and a first surface of the buffer layer 210 covers the patterned substrate layer 101 and the carrier substrate 100.
In detail, a partial region of the first surface of the buffer layer 210 is filled in the hollow region of the patterned substrate layer 101, so as to form a supporting portion 2011 contacting with the carrier substrate 100; the other region of the first surface of the buffer layer 210 covers the outer surface of the etching stop layer 110 to define the hollow portion 2012.
As shown in fig. 4C, in the step S13, the first semiconductor layer 220 is exposed by etching the multi-layer epitaxial layer, so as to form a first electrode 270 in contact with the first semiconductor layer 220.
As shown in fig. 4C, in the step S13, after the sacrificial layer 111 is removed, a cavity surrounded by the first surface of the buffer layer 210 is formed in the region corresponding to the sacrificial layer 111, that is, the cavity 2012 of the weakened layer 201.
In particular implementations, a dry or wet etch process may be used. In the present embodiment, an ICP etching process is employed.
In the step S44, a first electrode 270 and a second electrode 260 are prepared, the first electrode 270 being in contact with the first semiconductor layer 220, and the second electrode 260 being in contact with the second semiconductor layer 240.
Specifically, the preparation method of the micro device array further comprises the following steps:
preparing a diffusion layer between a second electrode and the multilayer epitaxial layer; and the number of the first and second groups,
and preparing a protective layer which covers the multilayer epitaxial layer and the bearing substrate and is provided with a first via hole and a second via hole for exposing the first electrode and the second electrode. In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The transfer method, the micro device array and the manufacturing method thereof provided by the embodiment of the invention are described in detail above, and the principle and the embodiment of the invention are explained by applying specific examples, and the description of the above embodiments is only used to help understanding the technical scheme and the core idea of the invention; those of ordinary skill in the art will understand that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (12)
1. A method of transferring a micro device, the method comprising:
providing a micro device array, wherein the micro device array comprises a bearing substrate and at least one micro device carried on the bearing substrate, and a weakening layer is arranged between the micro device and the bearing substrate and is configured to be broken under the action of external force acting on the micro device array so as to separate the micro device from the bearing substrate;
and (3) aligning: aligning and attaching the micro device array and a receiving substrate; and the number of the first and second groups,
a transfer step: the transferring step includes: forming the external force for breaking the weakening layer such that the micro device is separated from the carrier substrate and the micro device is held on the receiving substrate.
2. The method for transferring a micro device according to claim 1, further comprising the steps of:
a bonding step: a step of electrically connecting the micro device held on the receiving substrate to the receiving substrate.
3. The micro device transfer method of claim 2, wherein the receiving substrate has an array of bonding bumps on a surface thereof, then:
in the alignment step: aligning an electrode of the micro device with the bonding bump;
in the transferring step: adhering electrodes of the micro device to the bonding bumps to hold the micro device on the receiving substrate;
in the joining step: and welding the electrode of the micro device on the bonding bump.
4. An array of micro devices, the array of micro devices comprising a carrier substrate and at least one micro device carried on the carrier substrate, wherein:
the micro devices are separated from the carrier substrate by a weakening layer between the micro devices and the carrier substrate, the weakening layer being configured to break under an external force applied to the array of micro devices.
5. The array of micro devices of claim 4, wherein the layer of weakness includes a void portion and a void portion for and defined by a support portion;
the support portion is configured to break under the external force acting on the array of micro devices, so that the micro devices are separated from the carrier substrate.
6. The array of micro devices of claim 5, wherein the support portion is in a network structure, an array of bars, a cross structure, or a rectangular frame structure.
7. The array of micro devices of claim 5, wherein the micro devices include a buffer layer having a first surface in contact with the carrier substrate;
the first surface is provided with a convex structure abutting against the bearing substrate and an opening array surrounded by the convex structure;
the opening array forms the cavity portion, the protruding structure forms the supporting portion, and the first surface is formed with the weakened layer.
8. The array of micro devices of claim 7, wherein the carrier substrate has an insulating layer on its surface in contact with the buffer layer;
the supporting part of the weakening layer penetrates through the thickness of the insulating layer to be abutted to the bearing substrate, and the cavity part of the weakening layer covers the insulating layer in an orthographic projection of the bearing substrate.
9. The array of micro devices of claim 7, wherein the micro devices are micro LED devices comprising:
the first semiconductor layer, the multiple quantum well layer and the second semiconductor layer are sequentially laminated on the surface, away from the bearing substrate, of the buffer layer;
a first electrode on a surface of the first semiconductor layer facing away from the buffer layer; and the number of the first and second groups,
a second electrode on a surface of the second semiconductor layer facing away from the buffer layer.
10. A method for fabricating an array of micro devices, the array of micro devices including a carrier substrate and at least one micro device disposed on the carrier substrate, the method comprising:
preparing a graphical substrate layer on a bearing substrate, wherein the outer surface of the graphical substrate layer is provided with a graphical sacrificial layer;
preparing a multilayer epitaxial layer for preparing the micro device on the bearing substrate provided with the patterned substrate layer, wherein the epitaxial layer structure comprises a buffer layer, a first semiconductor layer, a multi-quantum well layer and a second semiconductor layer which are sequentially stacked, and the first surface of the buffer layer covers the patterned substrate layer and the bearing substrate;
etching the multilayer epitaxial layer to expose the multiple quantum well layer; and the number of the first and second groups,
and etching the patterned sacrificial layer to form the weakening layer on the first surface of the buffer layer.
11. The method of fabricating an array of micro devices according to claim 10, further comprising:
a step of fabricating a first electrode and a second electrode on the multilayer epitaxial layer to obtain a micro device, wherein: the first electrode is in contact with the first semiconductor layer, and the second electrode is in contact with the second semiconductor layer.
12. The method of making an array of micro devices of claim 10, wherein the patterned substrate layer is obtained by:
preparing a silicon-containing material layer on the bearing substrate and patterning the silicon-containing material layer; and the number of the first and second groups,
and carrying out oxidation treatment on the silicon-containing material layer formed on the bearing substrate to obtain the patterned substrate layer.
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