CN112864283A - 一种提升异质结太阳能电池电学性能的工艺方法 - Google Patents
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Abstract
本发明公开了一种提升异质结太阳能电池电学性能的工艺方法，所述方法包括如下步骤：制绒清洗；CVD沉积非晶硅薄膜；PVD分别沉积高透光ITO薄膜和低电阻ITO薄膜；制作金属电极，以及蚀刻金属电极区域外的低电阻ITO薄膜。本发明使用了低电阻ITO薄膜跟金属电极形成欧姆接触，降低了接触电阻；同时使用了高透光ITO薄膜作为减反射薄膜，提升了短路电流，从而使异质结电池的转换效率有了较大的提升。所以本发明提供了一个高转换效率、低成本的提升电学性能的方案，对高效异质结电池的量产和发展具有非常重要的意义。
Description
技术领域
本发明涉及晶体硅太阳能电池领域，尤其涉及一种提升异质结太阳能电池电学性能的工艺方法。
背景技术
目前晶体硅太阳能电池的工艺技术较为成熟，多晶在18％-19％，单晶在19-20％左右，单晶PERC在20-21％左右。经过多年的改进，晶硅电池的成本已有大幅的下降，目前继续下降的空间比较有限。而国内高效异质结太阳能电池的研发和产业化已经取得很大的突破，电池效率已经取得了较大的提升，量产也达到了22-23％左右的效率水平。
目前异质结电池效率进一步提升遇到了瓶颈，跟PREC电池相比，开路电压Voc和填充因子FF有明显的优势，但是短路电流差距比较明显。PERC电池的短路电流Isc达到10A左右，异质结电池的短路电流在9.2-9.3A，还有很大的提升空间。两者之间的差别在PREC电池的减反膜是SIN，减反射效果比较好。而异质结电池的减反膜是ITO，同时它又是导电膜，在方块电阻和透过率之间要取平衡值，这就限制了ITO作为减反膜的效果不如氮化硅。因此如何优化ITO薄膜，使其电阻率和透过率达到最佳的状态，成为异质结电池效率提升的一个重要方向。
发明内容
针对上述问题，本发明提供了一种提升异质结太阳能电池电学性能的工艺方法。
为解决上述技术问题，本发明所采用的技术方案是：一种提升异质结太阳能电池电学性能的工艺方法，所述方法包括如下步骤：
制绒清洗；
CVD沉积非晶硅薄膜；
PVD分别沉积高透光ITO薄膜和低电阻ITO薄膜；
制作金属电极，以及蚀刻金属电极区域外的低电阻ITO薄膜。
进一步的，所述制绒清洗工艺采用碱制绒，金字塔尺寸控制在1-10um。
进一步的，所述CVD沉积非晶硅薄膜工艺，本征非晶硅厚度为1-20nm，P型发射极非晶硅层厚度为1-30nm，N型背场非晶硅层厚度为1-20nm。
进一步的，所述P高透光ITO薄膜厚度为80-120nm，低电阻ITO薄膜厚度为5-20nm。
进一步的，所述金属电极为银或铜锡叠层，电极高度为10-40um。
进一步的，所述蚀刻液为酸液，蚀刻ITO薄膜厚度为10-30nm。
由上述对本发明结构的描述可知，和现有技术相比，本发明具有如下优点：
本发明在沉积完非晶硅薄膜之后，分别沉积高透光ITO薄膜和低电阻ITO薄膜；其中低电阻ITO薄膜用于跟金属电极形成欧姆接触，高透光ITO薄膜用于减反射，之后形成金属电极；最后蚀刻金属电极区域外的低电阻ITO薄膜完成电池的制作。这种电池工艺由于使用了低电阻ITO薄膜跟金属电极形成欧姆接触，降低了接触电阻；同时使用了高透光ITO薄膜作为减反射薄膜，提升了短路电流，从而使异质结电池的转换效率有了较大的提升。所以本发明提供了一个高转换效率、低成本的提升电学性能的方案，对高效异质结电池的量产和发展具有非常重要的意义。
附图说明
构成本申请的一部分的附图用来提供对本发明的进一步理解，本发明的示意性实施例及其说明用于解释本发明，并不构成对本发明的不当限定。
在附图中：
图1为本发明一种提升异质结太阳能电池电学性能的工艺方法流程图；
图2为本发明一种高电学性能的异质结太阳能电池示意图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
实施例
参考图1，一种提升异质结太阳能电池电学性能的工艺方法，所述方法包括如下步骤：
S01、制绒清洗，所述制绒清洗工艺采用碱制绒，碱性溶液为KOH溶液，所述绒面尺寸为2um；
S02、CVD沉积非晶硅薄膜，所述CVD沉积非晶硅薄膜工艺，本征非晶厚度为10nm，P型非晶硅为15nm，N型非晶硅为5nm；
S03、PVD分别沉积高透光ITO薄膜和低电阻ITO薄膜，所述高透光ITO薄膜厚度为110nm，低电阻ITO薄膜厚度为10nm；
S04、制作金属电极，以及蚀刻金属电极区域外的低电阻ITO薄膜，所述金属电极为Ag，电极厚度为30um，所述蚀刻溶液为盐酸溶液，蚀刻电极外区域的ITO厚度为10nm。
电池结构如图2所示，其自上而下包括，金属栅线电极7；低电阻ITO薄膜6；高透光ITO薄膜5；P型非晶硅薄膜3；本征非晶硅薄膜2；N型单晶硅片1：本征非晶硅层2；N型非晶硅层4；高透光ITO薄膜5；低电阻ITO薄膜6；金属栅线电极7。
本发明在沉积完非晶硅薄膜之后，分别沉积高透光ITO薄膜和低电阻ITO薄膜；其中低电阻ITO薄膜用于跟金属电极形成欧姆接触，高透光ITO薄膜用于减反射，之后形成金属电极；最后蚀刻金属电极区域外的低电阻ITO薄膜完成电池的制作。这种电池工艺由于使用了低电阻ITO薄膜跟金属电极形成欧姆接触，降低了接触电阻；同时使用了高透光ITO薄膜作为减反射薄膜，提升了短路电流，从而使异质结电池的转换效率有了较大的提升。所以本发明提供了一个高转换效率、低成本的提升电学性能的方案，对高效异质结电池的量产和发展具有非常重要的意义。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。
Claims (6)
1.一种提升异质结太阳能电池电学性能的工艺方法，其特征在于：所述方法包括如下步骤：
制绒清洗；
CVD沉积非晶硅薄膜；
PVD分别沉积高透光ITO薄膜和低电阻ITO薄膜；
制作金属电极，以及蚀刻金属电极区域外的低电阻ITO薄膜。
2.根据权利要求1所述一种提升异质结太阳能电池电学性能的工艺方法，其特征在于：所述制绒清洗工艺采用碱制绒，金字塔尺寸控制在1-10um。
3.根据权利要求1所述一种提升异质结太阳能电池电学性能的工艺方法，其特征在于：所述CVD沉积非晶硅薄膜工艺，本征非晶硅厚度为1-20nm，P型发射极非晶硅层厚度为1-30nm，N型背场非晶硅层厚度为1-20nm。
4.根据权利要求1所述一种提升异质结太阳能电池电学性能的工艺方法，其特征在于：所述P高透光ITO薄膜厚度为80-120nm，低电阻ITO薄膜厚度为5-20nm。
5.根据权利要求1所述一种提升异质结太阳能电池电学性能的工艺方法，其特征在于：所述金属电极为银或铜锡叠层，电极高度为10-40um。
6.根据权利要求1所述一种提升异质结太阳能电池电学性能的工艺方法，其特征在于：所述蚀刻液为酸液，蚀刻ITO薄膜厚度为10-30nm。
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| US20130146132A1 (en) * | 2010-08-09 | 2013-06-13 | Kaneka Corporation | Crystalline silicon-based solar cell |
| CN106601855A (zh) * | 2015-10-14 | 2017-04-26 | 钧石(中国)能源有限公司 | 一种双面发电异质结太阳能电池的制备方法 |
| CN207637824U (zh) * | 2017-12-11 | 2018-07-20 | 晋能光伏技术有限责任公司 | 一种高效晶硅/非晶硅异质结电池结构 |
| CN109166940A (zh) * | 2017-06-19 | 2019-01-08 | 福建金石能源有限公司 | 一种高效异质结太阳能电池的电极制作方法 |
| US20190148579A1 (en) * | 2017-11-15 | 2019-05-16 | Beijing Juntailnnovation Technology Co., Ltd. | Heterojunction solar cell and preparation method thereof |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130146132A1 (en) * | 2010-08-09 | 2013-06-13 | Kaneka Corporation | Crystalline silicon-based solar cell |
| CN106601855A (zh) * | 2015-10-14 | 2017-04-26 | 钧石(中国)能源有限公司 | 一种双面发电异质结太阳能电池的制备方法 |
| CN109166940A (zh) * | 2017-06-19 | 2019-01-08 | 福建金石能源有限公司 | 一种高效异质结太阳能电池的电极制作方法 |
| US20190148579A1 (en) * | 2017-11-15 | 2019-05-16 | Beijing Juntailnnovation Technology Co., Ltd. | Heterojunction solar cell and preparation method thereof |
| CN207637824U (zh) * | 2017-12-11 | 2018-07-20 | 晋能光伏技术有限责任公司 | 一种高效晶硅/非晶硅异质结电池结构 |
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