CN112857439A

CN112857439A - Thin film sensor and preparation method thereof

Info

Publication number: CN112857439A
Application number: CN202110010411.9A
Authority: CN
Inventors: 谭秋林; 薛涛; 张磊
Original assignee: North University of China
Current assignee: North University of China
Priority date: 2021-01-06
Filing date: 2021-01-06
Publication date: 2021-05-28

Abstract

The invention discloses a thin film sensor and a preparation method thereof, wherein the thin film sensor comprises: a substrate; an insulating layer disposed on the substrate; and at least two of 3 devices of a first thin film thermocouple, a thin film thermocouple array and a sensitive gate unit which are arranged on the insulating layer; the first thin film thermocouple is used for temperature measurement; the thin film thermocouple array is used for measuring heat flux density; the sensitive gate unit is used for strain measurement. The film sensor can simultaneously complete the measurement of at least two data in temperature, heat flux density and strain, and can effectively reduce the volume of the sensor, thereby reducing the occupation of the sensor on the area of a high-temperature part to be measured and reducing the interference of the sensor on the surface heat exchange and the surface air flow of the high-temperature part.

Description

Thin film sensor and preparation method thereof

Technical Field

The invention relates to the technical field of sensors, in particular to a thin film sensor and a preparation method thereof.

Background

When the aerospace engine works, under severe environments such as high temperature and high pressure generated by gas combustion, turbine blades rotate at high speed, the surface temperature of the turbine blades rises sharply, various stresses with huge changes can be borne, and the performance and the service life of the engine are greatly influenced. In order to evaluate materials such as high-temperature components of an engine and develop new high-temperature components, parameters of the high-temperature components of the engine, such as surface temperature, strain, surface heat flow and the like, need to be measured. In order to ensure the safe operation of the engine, parts such as turbine blades and the like also need to be monitored in real time, and if the parts reach the fault or breakdown condition, the parts need to be repaired or replaced in time, so that the operation safety of the spacecraft is ensured.

In the prior art, temperature sensors, pressure sensors and heat flow sensors are usually adopted to measure the temperature, strain and heat flow of high-temperature components respectively, but the existing sensors have large volumes, occupy large areas on the high-temperature components, and have certain interference on surface heat exchange and surface air flow of the high-temperature components.

Disclosure of Invention

The invention provides a thin film sensor and a preparation method thereof, which aim to solve the problem of larger size of the sensor in the prior art.

In a first aspect, an embodiment of the present invention provides a thin film sensor, including:

a substrate;

an insulating layer disposed on the substrate;

and at least two of 3 devices of a first thin film thermocouple, a thin film thermocouple array and a sensitive gate unit which are arranged on the insulating layer;

the first thin film thermocouple is used for temperature measurement;

the thin film thermocouple array is used for measuring heat flux density;

the sensitive gate unit is used for strain measurement.

In a second aspect, an embodiment of the present invention provides a method for manufacturing a thin film sensor, including:

sequentially adopting acetone, ethanol and deionized water to clean the surface of the substrate, and obtaining a dry substrate in a nitrogen atmosphere;

depositing an insulating layer on the dry substrate to obtain a first composite sheet with the insulating layer;

depositing a thermocouple electrode film material layer and/or a sensitive grid material layer on the surface of the insulating layer of the first composite sheet to obtain a second composite sheet;

depositing a thermal resistance layer on the thermocouple electrode thin film material layer of the second composite sheet to obtain a third composite sheet;

and annealing the third composite sheet to obtain the thin film sensor.

According to the invention, the insulating layer is arranged on the substrate, and at least two of the 3 devices of the first thin-film thermocouple, the thin-film thermocouple array and the sensitive grid unit are arranged on the insulating layer, so that one thin-film sensor can simultaneously realize the measurement of at least two data of temperature, heat flux density and strain, the volume of the sensor can be effectively reduced, the occupation of the sensor on the area of a high-temperature component to be measured is reduced, and the interference of the sensor on the surface heat exchange and the surface airflow of the high-temperature component is reduced.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.

FIG. 1 is a schematic diagram of an exemplary structure of a thin film sensor according to an embodiment of the present invention;

FIG. 2 is a schematic diagram of an exemplary structure of a first thin-film thermocouple provided in accordance with an embodiment of the present invention;

FIG. 3 is a schematic diagram of another exemplary configuration of a first thin-film thermocouple provided in accordance with an embodiment of the present invention;

FIG. 4 is a schematic diagram illustrating an exemplary structure of a thin film thermocouple array according to an embodiment of the present invention;

FIG. 5 is a schematic diagram of another exemplary structure of a thin film thermocouple array according to an embodiment of the present invention;

FIG. 6 is a schematic diagram of another exemplary structure of a thin film thermocouple array according to an embodiment of the present invention;

fig. 7 is a schematic diagram illustrating an exemplary structure of a sensitive gate unit according to an embodiment of the present invention;

fig. 8 is a schematic diagram illustrating another exemplary structure of a sensitive gate unit according to an embodiment of the present invention;

FIG. 9 is an exemplary schematic diagram of a thermal resistance layer provided in accordance with an embodiment of the present invention;

FIG. 10 is another exemplary schematic diagram of a thermal resistance layer provided in accordance with an embodiment of the present invention;

FIG. 11 is a further exemplary diagram of a thermal resistance layer provided in accordance with an embodiment of the present invention;

FIG. 12 is a schematic diagram of another exemplary structure of a thin film sensor according to an embodiment of the present invention;

FIG. 13 is an actual view of FIG. 12 provided in accordance with one embodiment of the present invention;

FIG. 14 is a schematic diagram of a thin film sensor according to an embodiment of the present invention connected to an external device;

FIG. 15 is a schematic flow chart illustrating a method for manufacturing a thin film sensor according to an embodiment of the present invention;

FIG. 16 is a schematic diagram of a thin film sensor manufacturing process according to an embodiment of the present invention;

FIG. 17 is a schematic diagram of an exemplary process for preparing a thermal resistance layer according to one embodiment of the present invention;

FIG. 18 is an exemplary illustration of a thin thermal resistance layer 18 provided in accordance with an embodiment of the present invention;

FIG. 19 is a schematic diagram of an exemplary three-dimensional structure of a thin-film sensor according to an embodiment of the present invention;

reference numerals:

10-a thin film sensor;

11-a substrate;

12-an insulating layer;

13-a first thin film thermocouple;

131-a first electrode (or a-electrode) of a first thin film thermocouple;

132-second electrode (or B-electrode) of first thin film thermocouple;

133 — hot junction of first thin film thermocouple;

134-an outer terminal of the first thin film thermocouple;

135-the other outer terminal of the first thin film thermocouple;

14-thin film thermocouple array;

141-second thin film thermocouple;

142-a first outer terminal end of the thin film thermocouple array;

143-a second termination end of the thin film thermocouple array;

144-first hot junction of thin-film thermocouple array;

145 — a second hot junction of the thin film thermocouple array;

15-sensitive gate cell;

151-resistive gate;

152-the junction between two resistive grids;

153-third outer connection end of sensitive grid unit;

154-fourth connection of the sensitive gate cell;

16-a thermal resistance layer;

17-first thermal resistance layer (i.e. thick thermal resistance layer);

18-a second thermal resistance layer (i.e. a thin thermal resistance layer);

19-a first thermal resistance layer;

20-a second layer of thermal resistance;

1-pad 1;

2-pad 2;

3-pad 3;

4-pad 4;

5-pad 5;

6-pad 6;

1 '-compensation wire 1';

2 '-compensation wire 2';

3 '-a compensation wire 3';

4 '-compensation wire 4';

5 '-a compensation wire 5';

6 '-compensation wire 6'.

With the above figures, certain embodiments of the invention have been illustrated and described in more detail below. The drawings and the description are not intended to limit the scope of the inventive concept in any way, but rather to illustrate it by those skilled in the art with reference to specific embodiments.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Furthermore, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. In the description of the following examples, "plurality" means two or more unless specifically limited otherwise.

The following several specific embodiments may be combined with each other, and details of the same or similar concepts or processes may not be repeated in some embodiments. Embodiments of the present invention will be described below with reference to the accompanying drawings.

An embodiment of the invention provides a film sensor, which is used for measuring the temperature, stress, heat flow and the like of parts such as engine turbine blades and the like in the technical fields of aerospace and the like.

As shown in fig. 1, an exemplary structure of a thin film sensor provided for this embodiment is a schematic diagram, which is a top view of the thin film sensor, and the embodiments of the present invention all use a substrate of the thin film sensor to be parallel to a horizontal plane as a reference, and the thin film sensor 10 includes: a substrate 11; an insulating layer 12 disposed on the substrate 11; at least two of the three devices of the first thin film thermocouple 13, the thin film thermocouple array 14 and the sensitive gate unit 15 which are arranged on the insulating layer 12; the first thin film thermocouple 13 is used for temperature measurement; the thin film thermocouple array 14 is used for heat flow density measurement; the sensitive gate element 15 is used for strain measurement.

Specifically, at least two of the 3 devices, namely the first thin-film thermocouple 13, the thin-film thermocouple array 14 and the sensitive gate unit 15, which are arranged on the insulating layer 12 specifically include the following 4 cases: 1. the thin film sensor 10 includes a first thin film thermocouple 13 and a thin film thermocouple array 14, so that measurement of temperature and heat flux density can be achieved; 2. the thin film sensor 10 includes a first thin film thermocouple 13 and a sensitive gate unit 15, so that temperature and strain measurements can be achieved; 3. the thin film sensor 10 comprises a thin film thermocouple array 14 and a sensitive grid unit 15, so that the measurement of heat flux density and strain can be realized; 4. the thin film sensor 10 includes a first thin film thermocouple 13, a thin film thermocouple array 14, and a sensitive gate unit 15, so that measurement of temperature, heat flux density, and strain can be simultaneously achieved. The first thin film thermocouple 13, the thin film thermocouple array 14 and the sensitive gate unit 15 are thin film layers of corresponding patterns (such as the patterns in fig. 1) deposited on the insulating layer 12, and the specific thickness may be set according to actual requirements, fig. 1 is only an exemplary structure, which exemplarily shows the composition and a distribution manner of the thin film sensor 10, and in actual application, the specific structure of the thin film sensor 10 and the thickness, shape and distribution manner of each part may be set according to actual requirements.

The thin film sensor of the embodiment is characterized in that the insulating layer is arranged on the substrate, and at least two of the three devices, namely the first thin film thermocouple, the thin film thermocouple array and the sensitive gate unit, are arranged on the insulating layer, so that the measurement of at least two data in temperature, heat flux density and strain can be simultaneously realized by one thin film sensor, the volume of the sensor can be effectively reduced, the occupation of the sensor on the area of a high-temperature part to be measured is reduced, and the interference of the sensor on the surface heat exchange and the surface airflow of the high-temperature part is reduced.

In some embodiments, the substrate 11 may be made of titanium alloy, nickel alloy, or stainless steel, and may be specifically configured according to actual requirements; the insulating layer 12 can be made of silicon nitride, aluminum oxide, or the like; the arrangement of the insulating layer 12 can make the thin film thermocouple and the sensitive grid unit 15 more firm; the material of the sensitive gate unit 15 can be nickel-chromium alloy, iron-chromium-aluminum alloy (0Cr21Al6Nb), platinum-tungsten alloy or palladium-chromium alloy, etc.

In some embodiments, as shown in fig. 2, an exemplary structure diagram of the first thin-film thermocouple provided for the present embodiment is provided. Fig. 2 is an enlarged schematic view of the first thin film thermocouple 13 of fig. 1. The first thin film thermocouple 13 includes two electrodes, such as a first electrode 131 (also referred to as an a electrode, indicated by black in fig. 2) and a second electrode 132 (also referred to as a B electrode, indicated by gray in fig. 2), which are made of different materials, such as an R-type PtRh13-Pt thermocouple, one end of the a electrode and one end of the B electrode are connected to form a thermal junction 133, the thermal junction 133 serves as a working end, the other end 134 of the a electrode and the other end 135 of the B electrode serve as external terminals and are connected to a data collector, in order to distinguish the data collector, the data collector may be referred to as a first data collector, specifically, the two external terminals 134 and 135 may be connected to a compensation wire through pads and connected to the first data collector through the compensation wire, and the first data collector collects thermoelectric potential signals (or referred to as potential signals) output by the two external terminals 134 and 135 of the first thin film thermocouple 13 based on the thermoelectric effect of, the potential signal is sent to the computer device, the computer device can display the received potential signal, the computer device can calculate the obtained temperature according to the received potential signal, and the obtained temperature can be displayed on the computer device. The step of determining the temperature by the computer device according to the electric potential signal may specifically be calculating according to a preset mapping rule, for example, obtaining an electric potential-temperature change curve corresponding to the thin film sensor 10 in advance, and in practical applications, after obtaining the electric potential signal output by the first thin film thermocouple 13 of the thin film sensor 10, determining the corresponding temperature according to the electric potential-temperature change curve corresponding to the thin film sensor 10 obtained in advance, where the specific calculation principle is the prior art and is not described herein any more, the electric potential-temperature change curve may be obtained by a comprehensive cooling effect test, for example, placing the standard thermocouple and the thin film sensor of the present invention under the same high temperature test condition, calibrating the thin film sensor of the present invention by using the standard thermocouple, and specifically, performing multiple comparison and analysis on the output electric potential signal of the first thin film thermocouple 13 of the thin film sensor 10 of the present invention by using electric potential and temperature change data, the corresponding potential-temperature change curve of the thin film sensor 10 of the present invention is plotted. The specific shape of the first thin film thermocouple 13 may be set according to actual requirements, and is not limited to the shape of fig. 2. Illustratively, as shown in fig. 3, another exemplary structural diagram of the first thin-film thermocouple provided for the present embodiment is shown.

A Data Acquisition (DAQ) device is a device that measures electrical or physical phenomena such as voltage, current, temperature, pressure, sound, and encoded Data.

Alternatively, the first thin-film thermocouple 13 may be an R-type thermocouple, specifically, an R-type PtRh13-Pt thermocouple, and the first thin-film thermocouple 13 may also be other thermocouple materials, such as B-type platinum rhodium 30-platinum rhodium 6, K-type nickel chromium 10-nickel silicon 3, J-type iron-copper nickel, T-type copper-copper nickel, and the like, and may be specifically set according to actual requirements.

In some embodiments, as shown in fig. 4, an exemplary structural schematic diagram of the thin film thermocouple array provided for this embodiment is an enlarged schematic diagram of the thin film thermocouple array 14 in fig. 1, where the thin film thermocouple array 14 is a thermocouple group formed by connecting two or more thin film thermocouples (referred to as second thin film thermocouples 141) in series, a first external connection end 142 and a second external connection end 143 of the thin film thermocouple array 14 are respectively used for being connected with a second data collector, specifically, may be connected with a compensation lead through a pad, and further connected with a second acquisition signal through a compensation lead, the second acquisition signal acquires potential signals output by the first external connection end and the second external connection end, and sends the potential signals to a computer device, and the computer device determines a heat flow density according to the potential signals. The second thin-film thermocouple may be the same as the first thin-film thermocouple 13, or may be a different thin-film thermocouple from the first thin-film thermocouple 13 according to actual requirements. Each second thin-film thermocouple in the thin-film thermocouple array 14 also includes two electrodes of different materials, such as a third electrode (also referred to as a C electrode, see black electrode in fig. 4) and a fourth electrode (also referred to as a D electrode, see grey electrode in fig. 4), which are similar to the first thin-film thermocouple 13 in structure, in which one end of the C electrode and one end of the D electrode are connected to form a hot junction, which serves as a working end, the other end of the C electrode may be referred to as a first external junction, and the other end of the D electrode may be referred to as a second external junction, in which, for two adjacent second thin-film thermocouples, such as the second thin-film thermocouple E and the second thin-film thermocouple F, the second external junction of the E is connected to the first external junction of the F, which may also be referred to as a hot junction, the hot junction of the working end of the second thin-film thermocouple may be referred to as a first hot junction 144, the hot junction at the junction of two second thin-film thermocouples is referred to as a second hot junction 145, so that the series connection of E and F is realized, and so on, the series connection of more second thin-film thermocouples can be realized as the thin-film thermocouple array 14, the first external junction point of the first second thin-film thermocouple in the thin-film thermocouple array 14 finally obtained is used as the first external junction end 142 of the thin-film thermocouple array 14, and the second external junction point of the last second thin-film thermocouple is used as the second external junction end 143 of the thin-film thermocouple array 14. The thin film thermocouple array 14 superimposes the thermoelectric effect of the plurality of thin film thermocouples through the series connection of the plurality of thin film thermocouples, so that the output potential is increased, the thin film thermocouple array 14 may be called a thermopile, the first external connection end 142 and the second external connection end 143 of the thin film thermocouple array 14 may be connected to a data collector (may be called a second data collector), the second data collector may be the same data collector as the first data collector or different data collectors, and specifically may be set according to actual requirements, the second data collector collects potential signals output by the two external connection ends of the thin film thermocouple array 14, determines the heat flow density according to the thermoelectric potential signals, and specifically may determine the heat flow density according to a pre-obtained potential-heat flow density change curve corresponding to the thin film sensor 10. The potential-heat flow density change curve corresponding to the thin film sensor 10 can be obtained by a comprehensive cooling effect test, for example, placing the HT-50 standard heat flow sensor and the thin film sensor 10 of the present invention under the same high temperature condition for testing, calibrating the thin film sensor 10 of the present invention by using the HT-50 standard heat flow sensor, performing multiple comparison and analysis on the heat flow density change data output by the HT-50 standard heat flow sensor and the potential signal output by the thin film sensor 10 of the present invention, and drawing the potential-heat flow density change curve corresponding to the thin film sensor 10, i.e., obtaining the mapping relationship between the output potential and the heat flow density of the thin film sensor 10 of the present invention, so that in the actual measurement, the final heat flow density can be determined according to the output heat potential of the thin film thermocouple array 14 of the thin film.

Alternatively, the pattern of the thin film thermocouple array 14 may be a zigzag, arc, etc., and is not limited to the shape in fig. 4, and may be specifically set according to actual requirements. As shown in fig. 5, another exemplary structure diagram of the thin film thermocouple array provided in this embodiment is shown. Fig. 6 is a schematic view illustrating a further exemplary structure of the thin film thermocouple array according to the present embodiment. The number of second thin film thermocouples included in the thin film thermocouple array 14 may be set according to actual needs.

In some embodiments, as shown in fig. 7, an exemplary structural schematic diagram of the sensitive gate unit provided for this embodiment is an enlarged schematic diagram of the sensitive gate unit 15 in fig. 1, where the sensitive gate unit 15 includes at least two resistor gates 151 connected in series, and two external terminals of the sensitive gate unit 15 are connected to a dynamic signal testing and analyzing system (e.g., a DH5929 dynamic signal testing and analyzing system); each of the resistor grids 151 may include two connection terminals, which are respectively referred to as a first connection terminal and a second connection terminal, and for two adjacent resistor grids, the second connection terminal of one resistor grid is connected to the first connection terminal of another resistor grid, and the connection point may be referred to as a connection point 152, thereby forming the sensitive grid unit 15, the first connection terminal of the first resistor grid in the sensitive grid unit 15 is used as an external connection terminal (may be referred to as a third external connection terminal 153) of the sensitive grid unit 15, the second connection terminal of the last resistor grid in the sensitive grid unit 15 is used as another external connection terminal (may be referred to as a fourth external connection terminal 154) of the sensitive grid unit 15, the third external connection terminal and the fourth external connection terminal may be connected to a dynamic signal testing and analyzing system, so as to convert the strain of the substrate 11 into a voltage signal or a current signal, and collect the voltage signal or the current signal through the dynamic signal testing, thereby realizing the measurement of the strain. Specifically, the sensitive gate unit 15 converts the strain of the substrate 11 caused by the outside into an electrical signal (voltage signal or current signal) through the deformation of the sensitive gate based on the resistance strain effect and the piezoresistive effect, so as to realize the real-time measurement of the stress and the strain on the surface or inside of the high-temperature component to be measured, and the measurement result can be displayed on a computer device in the form of voltage or current. Taking the voltage signal as an example, a voltage-strain change curve corresponding to the thin film sensor 10 can be obtained in advance, the dynamic signal testing and analyzing system collects the voltage signal output by the thin film sensor 10 in real time, and the strain is determined according to the voltage-strain change curve corresponding to the thin film sensor 10; the voltage-strain change curve corresponding to the thin film sensor 10 can be obtained by a comprehensive cooling effect test, for example, placing a standard high temperature strain gauge and the thin film sensor 10 of the present invention under the same high temperature test condition, calibrating the thin film sensor of the present invention by using the standard high temperature strain gauge, comparing and analyzing the stress and strain change data output by the standard high temperature strain gauge and the voltage output by the thin film sensor 10 of the present invention for many times, and drawing the voltage-strain change curve corresponding to the thin film sensor 10.

Alternatively, the specific structure and pattern of the sensitive gate unit 15 may be set according to actual requirements, and are not limited to the structure and pattern in fig. 7. For example, the number of the resistance gates included in the sensitive gate unit 15 may be other numbers, and the layout of the resistance gates on the insulating layer 12 may be set to other layouts according to actual requirements.

Illustratively, as shown in fig. 8, for another exemplary structural schematic diagram of the sensitive gate unit provided in this embodiment, the sensitive gate unit 15 includes 4 resistive gates.

In practical applications, the shape of the substrate 11 of the thin film sensor 10 may be set according to actual requirements, for example, the substrate may be set to be circular, rectangular, elliptical, or rectangular, the shape of the corresponding insulating layer 12 is consistent with that of the substrate 11, the first thin film thermocouple 13, the thin film thermocouple array 14, and the sensitive gate unit 15 are distributed on the insulating layer 12, the thickness of the substrate 11 may be set according to actual requirements, for example, 0.5mm to 1mm, the size of the substrate 11 may be set according to actual requirements, for example, the circular substrate 11 may be 20mm to 100mm in diameter, the thickness of the insulating layer 12 may be 0.05 μm to 0.1 μm, the thickness of the thin film thermocouple (including the first thin film thermocouple 13 and each second thin film thermocouple in the thin film thermocouple array 14) may be 0.2 μm to 0.5 μm, and the thickness of the sensitive gate unit 15 may be 400 nm to 800 nm.

It will be appreciated that the operation of the thin film thermocouples needs to be performed in conjunction with a thermal resistance layer (not shown in fig. 1), and illustratively, as shown in fig. 9, an exemplary schematic diagram of a thermal resistance layer provided for this embodiment, which is a schematic diagram of the relationship of the thermal resistance layer with the first thin film thermocouple 13 and the thin film thermocouple array 14, which can be considered as a bottom view with the substrate and the insulation layer removed, the thin film sensor 10 includes a thermal resistance layer 16, the thermal resistance layer 16 is disposed on the working end hot junction 133 of the first thin film thermocouple 13 and the working end first hot junction 144 of each second thin film thermocouple such that the working end hot junction 133 of the first thin film thermocouple 13 and the working end first hot junction 144 of each second thin film thermocouple are located on the thermal resistance layer 16 in a vertical projection of the thermal resistance layer 16, the two outer terminations 134 and 135 of the first thin film thermocouple 13 and the outer terminations of each second thin film thermocouple (including the first outer termination 142, the second termination 142, the first termination end 144, the second termination, the, Second outer termination 143, second hot junction 145) is located outside the thermal resistance layer 16 in a vertical projection of the thermal resistance layer, i.e., one (the first hot junction) of two adjacent hot junctions of the thin-film thermocouple array 14 is projected onto the thermal resistance layer 16, and the other (the second hot junction) is projected onto the thermal resistance layer 16. For the first thin film thermocouple 13, when the thin film sensor 10 is subjected to thermal shock, the thermal resistance layer 16 delays heat transfer, so that a short temperature difference exists between a working end (a hot junction) on the thermal resistance layer 16 and an external end outside the thermal resistance layer 16, according to the seebeck effect, the temperature difference between the two ends can cause a corresponding thermoelectric potential difference, and the output potential can evaluate the temperature, so that the real-time measurement of the temperature is realized. For the thin film thermocouple array 14, the output potential is the accumulation result of the thermal potential difference among a plurality of thermal junctions, and the output potential can evaluate the magnitude of the heat flow density, so that the real-time measurement of the heat flow density is realized.

Optionally, the thickness of the thermal resistance layer 16 may be specifically set according to actual requirements, for example, may be set to a thickness value between 0.5 μm and 10 μm.

For example, as shown in fig. 10, another exemplary schematic diagram of the thermal resistance layer provided for this embodiment is a schematic diagram of a relationship between the thermal resistance layer and the first thin-film thermocouple 13 and the thin-film thermocouple array 14, which can be considered as a bottom view after removing the substrate and the insulating layer, the thermal resistance layer includes a thick thermal resistance layer 17 (which may be referred to as a first thermal resistance layer) and a thin thermal resistance layer 18 (which may be referred to as a second thermal resistance layer), the thickness of the thick thermal resistance layer is greater than that of the thin thermal resistance layer, the working end of the first thin-film thermocouple 13 is in contact with the thick thermal resistance layer, the two outer connection ends of the first thin-film thermocouple 13 are in contact with the thin thermal resistance layer, the working end of each second thin-film thermocouple in the thin-film thermocouple array 14 is in contact with the first thermal resistance layer, the outer connection point of each second thin-film thermocouple is in contact with the second thermal resistance layer, specifically, the thick thermal resistance layer is disposed at the working end thermal point 133 of the first thin-film thermocouple 13 and the working end 144, the thin thermal resistance layer is disposed above the external connection ends (134 and 135) of the first thin-film thermocouples 13 and the external connection points (including the first external connection end 142, the second external connection end 143, and the second thermal connection point 145) of each second thin-film thermocouple, so that the vertical projection of the working-end thermal connection point 133 of the first thin-film thermocouple 13 and the working-end first thermal connection point 144 of each second thin-film thermocouple on the thermal resistance layer is located on the thick thermal resistance layer, and the vertical projection of the external connection ends 134 and 135 of the first thin-film thermocouples 13 and the external connection points (including the first external connection end 142, the second external connection end 143, and the second thermal connection point 145) of each second thin-film thermocouple on the thin thermal resistance layer is located on the thin thermal resistance layer. According to the fact that the delay effect of the thick thermal resistance layer and the thin thermal resistance layer on heat transfer is different, the temperature difference between two adjacent hot junction points is caused, so that electric potential is output, temperature measurement and heat flow density measurement are achieved, the specific principle of determining the temperature and the heat flow density based on the output electric potential is consistent with the principle, and details are not repeated.

Alternatively, the thicknesses of the first thermal resistance layer and the second thermal resistance layer may be set according to actual requirements, for example, the thickness of the first thermal resistance layer may be set to a value between 5 μm and 11 μm, and the thickness of the second thermal resistance layer may be set to a value between 0.5 μm and 1 μm.

As for the thin film thermocouple array 14 shown in fig. 6, as shown in fig. 11, which is another exemplary schematic diagram of the thermal resistance layer provided in this embodiment, the arrangement principle of the thermal resistance layer 16 is similar to that shown in fig. 9, and it is sufficient that one (the first thermal point) of two adjacent thermal points of the thin film thermocouple array 14 is projected onto the thermal resistance layer, and the other (the second thermal point) is projected out of the thermal resistance layer, which is not described in detail. The thermal resistance layer may also include a thick thermal resistance layer and a thin thermal resistance layer, and the principle is similar to that of fig. 10, and is not described herein again.

Alternatively, the thermal resistance layer material may be SiO₂、Ta₂O₅And materials such as aluminum oxide and the like can be specifically set according to actual requirements.

Alternatively, the specific distribution of the first thin-film thermocouple 13, the thin-film thermocouple array 14 and the sensitive gate unit 15 on the insulating layer 12 may be set according to actual requirements, and is not limited to the layout in fig. 1.

Illustratively, as shown in fig. 12, another exemplary structure diagram of the thin film sensor provided for this embodiment, the thin film sensor 10 has a rectangular substrate 11, and accordingly, an insulating layer 12 having the same shape as the substrate 11, a first thin film thermocouple 13 having an angular shape, a thin film thermocouple array 14 having a bow-shaped shape, wherein each second thin film thermocouple is in-line, the sensitive gate unit 15 comprises 4 resistive gates, a thermal resistance layer 16 is disposed on the thin film thermocouple array 14 and the first thin film thermocouple 13, in fig. 12, in order to clearly show the relationship between the thermal resistance layer and the first thin film thermocouple 13 and the thin film thermocouple array 14, the thermal resistance layer 16 does not cover the corresponding portions of the first thin film thermocouple 13 and the thin film thermocouple, and the actual thermal resistance layer 16 covers the corresponding portions of the first thin film thermocouple 13 and the thin film thermocouple, as shown in fig. 13, which is an actual view provided for this embodiment in fig. 12. The external terminals of each part can be connected with the corresponding compensation wires through the bonding pads, and then connected with the corresponding data acquisition units through the compensation wires, and specific working principles are not repeated.

In some embodiments, optionally, the substrate 11 may be a substrate independent of the high-temperature component to be measured, and after the thin film sensor is prepared, the thin film sensor is installed in a corresponding area of the high-temperature component to be measured, a specific installation manner may be set according to an actual requirement, for example, an installation structure may be set, the thin film sensor is installed on the high-temperature component to be measured, and the installation structure may be set according to the actual requirement, which is not limited in the embodiments of the present invention.

In some embodiments, the substrate 11 may be a target area on a high-temperature component to be measured (such as a turbine blade or any other high-temperature component), where the target area is an area where temperature, heat flux density and strain need to be measured, and the target area is used as the substrate 11, and the insulating layer 12, the first thin-film thermocouple 13, the thin-film thermocouple array 14, the sensitive grid unit 15, and other required parts, such as a thermal resistance layer, a pad connected to an external terminal of each part, and the like, are deposited on the substrate 11.

Exemplarily, as shown in fig. 14, in a schematic diagram for connecting the thin film sensor to an external device provided in this embodiment, two external terminals 134 and 135 of a first thin film thermocouple (covered under the thick thermal resistance layer 17 and the thin thermal resistance layer 18 in fig. 14) are respectively connected to a corresponding compensation wire 1 'and a corresponding compensation wire 2' through a pad 1 and a pad 2, and the compensation wires 1 'and 2' are connected to a first data collector; the first external connection end 142 of the thin-film thermocouple array 14 is connected with the compensation lead 3 'through the pad 3, the second external connection end 143 of the thin-film thermocouple array (covered under the thick thermal resistance layer 17 and the thin thermal resistance layer 18 in fig. 14) is connected with the compensation lead 4' through the pad 4, the compensation leads 3 'and 4' are connected with the second data collector, and if the first data collector has enough ports, the compensation leads 3 'and 4' can also be connected with the first data collector; the third external connection end 153 of the sensitive gate unit 15 is connected with the compensation wire 5 'through the pad 5, the fourth external connection end 154 of the sensitive gate unit 15 is connected with the compensation wire 6' through the pad 6, the compensation wires 5 'and 6' are connected with the dynamic signal test analysis system, the first data collector, the second data collector and the dynamic signal test analysis system are all connected with computer equipment, collected signals are sent to the computer equipment, and specific results of temperature, heat flux density and strain are obtained through calculation of the computer equipment and can be displayed.

Another embodiment of the present invention provides a method for manufacturing a thin film sensor, which is used for manufacturing the thin film sensor provided in the above embodiments.

As shown in fig. 15, a schematic flow chart of a method for manufacturing a thin film sensor provided in this embodiment is shown, where the method includes:

step 201, sequentially adopting acetone, ethanol and deionized water to clean the surface of the substrate, and obtaining the dry substrate in a nitrogen atmosphere.

Specifically, the substrate material may be a titanium alloy, nickel, a nickel alloy, or stainless steel, and may be specifically set according to actual requirements, and the thickness of the substrate may be set according to actual requirements, for example, may be 0.5mm to 1mm, and when the substrate is a target area of the high-temperature component to be measured, the thickness of the substrate is the thickness of the high-temperature component to be measured; the size of the substrate can be set according to actual requirements, for example, a circular substrate is taken as an example, the diameter can be 20 mm-100 mm, the substrate can be placed in a glass vessel, sufficient acetone solvent is poured to cover the substrate, the glass vessel is placed in an ultrasonic cleaning machine to be subjected to ultrasonic vibration for a first preset time, for example, 5min, the substrate after ultrasonic cleaning is placed in an ethanol solution to be subjected to ultrasonic cleaning for a second preset time, for example, 6min, the substrate after ultrasonic cleaning is placed in deionized water to be subjected to ultrasonic cleaning for a third preset time, after cleaning, the moisture on the surface of the substrate is dried by dry nitrogen, and the specific cleaning time (the first preset time, the second preset time and the third preset time) can be set according to actual requirements.

Step 202, depositing an insulating layer on the dried substrate to obtain a first composite sheet with the insulating layer.

Specifically, after obtaining the dried substrate, an insulating layer may be deposited on the dried substrate to obtain a substrate with an insulating layer, which may be referred to as a first composite sheet in order to be distinguished from the original substrate; the insulating layer can be deposited by any physical vapor deposition method, such as a magnetron sputtering deposition method, an ion beam sputtering deposition method, and the like, and the magnetron sputtering deposition method can include a radio frequency magnetron sputtering method and a direct current magnetron sputtering method.

Illustratively, a dry substrate is placed in a deposition chamber of magnetron sputtering, and an insulating layer is deposited on the surface of the dry substrate by using a physical vapor deposition method.

The insulating layer material can be silicon nitride, aluminum oxide and other materials; the arrangement of the insulating layer can ensure that the thin film thermocouple and the sensitive grid unit are firmer; the thickness of the insulating layer can be 0.05-0.1 μm, and the specific thickness value can be set according to actual requirements.

And 203, depositing a thermocouple electrode thin film material layer and/or a sensitive grid material layer on the surface of the insulating layer of the first composite sheet to obtain a second composite sheet.

Specifically, after the insulating layer is deposited to obtain the first composite sheet, a thermocouple electrode thin film material layer and/or a sensitive gate material layer may be deposited on the surface of the insulating layer of the first composite sheet, where the thermocouple electrode thin film material layer may include an electrode thin film material of a first thin film thermocouple and/or an electrode thin film material of a thin film thermocouple array, that is, the deposition content may be determined according to the specific type of the thin film sensor to be prepared, if the thin film sensor is desired to achieve measurement of temperature and heat flux density, the electrode thin film material of the first thin film thermocouple and the electrode thin film material of the thin film thermocouple array may be deposited, if the thin film sensor is desired to achieve measurement of temperature and strain, the electrode thin film material and the sensitive gate material layer of the first thin film thermocouple may be deposited, if it is desired to perform the measurements of temperature, heat flux density and strain, the electrode film material of the first thin film thermocouple, the electrode film material of the thin film thermocouple array and the layer of sensitive gate material are deposited. Since each thin film thermocouple includes two electrodes of different materials, the two electrodes need to be deposited separately during deposition. Taking the electrode film material of the first thin film thermocouple, the electrode film material of the thin film thermocouple array and the sensitive gate material layer deposited on the surface of the insulating layer of the first composite sheet as an example, in the actual preparation process, the material layers of at least two devices can be deposited according to the actual requirements.

For the case where the first thin-film thermocouple is the same thin-film thermocouple as the second thin-film thermocouple in the thin-film thermocouple array, masks corresponding to two electrodes can be manufactured in advance, for example, the masks are called a first mask and a second mask, the masks can be metal masks such as a stainless steel mask, the first mask can comprise a first thin film thermocouple A electrode pattern which is arranged in a layout and second thin film thermocouple C electrodes (which are made of the same material as the A electrodes) in a thin film thermocouple array, similarly, the second mask can comprise a first thin film thermocouple B electrode pattern and second thin film thermocouple D electrode patterns, so that the a electrode of the first thin film thermocouple and the C electrode of each second thin film thermocouple can be simultaneously deposited through the first mask, the electrode B of the first film thermocouple and the electrode D of each second film thermocouple can be deposited simultaneously through a second mask; taking the first mask as an example, during deposition, the first mask and the first composite sheet can be fixed together, a stainless steel fixture can be used for fixing, the first composite sheet fixed with the first mask is placed in a deposition chamber of an ion beam sputtering film plating machine, an ion beam sputtering deposition mode is adopted to deposit electrode film materials of an electrode A of the first film thermocouple and a electrode C of each second film thermocouple on the surface of the insulating layer, the first mask is taken down after deposition is finished, then the second mask and the first composite sheet are fixed to deposit electrode film materials of an electrode B of the first film thermocouple and an electrode D of each second film thermocouple, and details are not repeated.

For the case that the first thin film thermocouple and the second thin film thermocouple in the thin film thermocouple array are different types of thin film thermocouples, the first thin film thermocouple and the thin film thermocouple array need to be deposited separately, and the deposition process may not be repeated, for example, a mask corresponding to each material electrode (4 materials correspond to 4 masks) may be preset.

Alternatively, the deposition of the thin film thermocouple may adopt any physical vapor deposition method, such as a magnetron sputtering deposition method, an ion beam sputtering deposition method, and the like, and the magnetron sputtering deposition method may include a radio frequency magnetron sputtering method and a direct current magnetron sputtering method.

Alternatively, the thickness of the thin-film thermocouple (including the first thin-film thermocouple and each second thin-film thermocouple in the thin-film thermocouple array) may be 0.2 μm to 0.5 μm, and may be set according to actual requirements.

Similarly, the deposition of the sensitive gate material layer may also be to preset a corresponding mask, which may be referred to as a third mask, where the third mask includes a pattern of the sensitive gate unit, the third mask is fixed to the first composite sheet on which the first thin film thermocouple and the thin film thermocouple array are deposited, and a magnetron sputtering deposition manner is used to deposit a corresponding target (e.g., a nickel-chromium alloy target) on the insulating layer to form a nickel-chromium alloy thin film, i.e., to prepare the sensitive gate unit.

Optionally, the deposition mode of the sensitive gate unit may adopt any physical vapor deposition mode, such as a magnetron sputtering deposition mode, an ion beam sputtering deposition mode, and the like, and the magnetron sputtering deposition mode may include a radio frequency magnetron sputtering method and a direct current magnetron sputtering method.

Optionally, the thickness of the sensitive gate unit may be 400-800 nm, and the sensitive gate unit may be specifically set according to actual requirements.

Alternatively, the metal mask may be a molybdenum sheet with a certain thickness, such as 300 microns, and the specific thickness may be set according to actual requirements.

And 204, depositing a thermal resistance layer on the thermocouple electrode thin film material layer of the second composite sheet to obtain a third composite sheet.

Specifically, after the second composite sheet is obtained, a thermal resistance layer may be deposited on the thermocouple electrode thin film material layer of the second composite sheet to obtain a third composite sheet. Specifically, a thermal resistance layer mask may be preset, and based on the thermal resistance layer mask, a physical vapor deposition method (such as an ion beam sputtering deposition method) may be used to deposit a thermal resistance layer material at a corresponding position on the thermocouple electrode thin film material layer.

Referring to the above embodiment, the thermal resistance layer may be a thermal resistance layer with a certain thickness deposited only in a certain area above the working end of the thin-film thermocouple, or a thick thermal resistance layer deposited above the working end of the thin-film thermocouple, and thin thermal resistance layers deposited above the two outer connection ends of the first thin-film thermocouple and the outer connection points of the second thin-film thermocouples in the thin-film thermocouple array, where the specific deposition area and thickness may be set according to actual requirements; the specific functions and positions of the thermal resistance layer are referred to the above embodiments, and are not described herein again; for the deposition of the thermal resistance layer with two thicknesses, two masks may be set, and the specific process based on the mask deposition is similar to the deposition process described above and will not be described herein again.

Optionally, the deposition manner of the thermal resistance layer may adopt any physical vapor deposition manner, such as a magnetron sputtering deposition manner, an ion beam sputtering deposition manner, and the like, and the magnetron sputtering deposition manner may include a radio frequency magnetron sputtering method and a direct current magnetron sputtering method.

Alternatively, the thickness of the thermal resistance layer can be set according to actual requirements, for example, for depositing the thermal resistance layer with only one thickness, the thickness of the thermal resistance layer can be a thickness value between 0.5 μm and 10 μm; for depositing the thick and thin thermal resistance layers, the thickness of the thick thermal resistance layer may be set to a value between 5 μm and 10 μm, and the thickness of the thin thermal resistance layer may be set to a value between 0.5 μm and 1 μm.

And step 205, annealing the third composite sheet to obtain the thin film sensor.

Specifically, the annealing treatment may be performed in a high-temperature atmosphere annealing furnace, the third composite sheet is placed in the high-temperature atmosphere annealing furnace, and various film materials of the prepared third composite sheet are annealed, wherein the annealing temperature range may be 800 ℃ to 1000 ℃, the annealing time may be 1 hour to 4 hours, and the specific annealing temperature and the annealing time may be set according to actual requirements, which is not limited in the embodiment of the present invention.

Optionally, slicing may be further performed after annealing, and a part of the excess substrate and the insulation layer of the annealed third composite sheet is cut off to obtain a thin film sensor in a preset shape, for example, for convenience of preparation, the surface of the substrate is rectangular or square, and the surface of the substrate actually required for the sensor to be prepared is circular, and then the thin film sensor may be cut into a circular shape after annealing, and particularly, slicing may be performed according to actual requirements.

Optionally, after the thin film sensor is obtained, the two outer connection ends of the first thin film thermocouple, the two outer connection ends (the first outer connection end and the second outer connection end) of the thin film thermocouple array, and the two outer connection ends (the third outer connection end and the fourth outer connection end) of the sensitive gate unit in the thin film sensor may be connected to their corresponding compensation wires through pads, specifically, may be connected at the pads by welding.

Optionally, in an actual preparation process, the deposition of the above-mentioned parts (including the first thin film thermocouple, the thin film thermocouple array, the sensitive gate unit, and the thermal resistance layer) may be performed in a partial order, which is not limited to the above-mentioned step order, and the specific order may be set according to actual requirements, for example, the sensitive gate unit may be prepared by depositing the sensitive gate material layer on the basis of the third mask, then the deposition may be performed on the basis of the first mask, and then the deposition may be performed on the basis of the second mask.

It is understood that the specific shape, size, included pattern position, etc. of each mask can be set according to the layout of each part on the surface of the insulating layer of the first composite sheet.

According to the preparation method of the thin film sensor, the insulating layer is deposited on the substrate, and at least two of the first thin film thermocouple, the thin film thermocouple array and the sensitive grid unit are deposited on the insulating layer, so that the first thin film thermocouple, the thin film thermocouple array and the sensitive grid unit are firmer and are not easy to peel off, the measurement of at least two data can be realized simultaneously, the size of the sensor can be effectively reduced, the occupation of the sensor on the area of a high-temperature component to be measured is reduced, and the interference of the sensor on the surface heat exchange and the surface airflow of the high-temperature component is reduced.

In some embodiments, the depositing a thermocouple electrode thin film material layer and a sensitive grid material layer on the surface of the insulating layer of the first composite sheet to obtain a second composite sheet includes:

depositing a first electrode film material layer of a first film thermocouple and a first electrode film material layer of each second film thermocouple in the film thermocouple array on the surface of the insulating layer; depositing a second electrode film material of the first film thermocouple and a second electrode film material of each second film thermocouple in the film thermocouple array on the surface of the insulating layer, so that the first electrode film material of the first film thermocouple and the second electrode film material of the first film thermocouple form the first film thermocouple, and the first electrode film material of each second film thermocouple and the second electrode film material of each second film thermocouple form the film thermocouple array; and depositing a sensitive gate material layer on the surface of the insulating layer around the thermocouple electrode thin film material layer to obtain a second composite sheet.

It should be noted that specific operations of these steps have been described in detail in the foregoing embodiments, and are not described herein again.

In some embodiments, the depositing a thermal resistance layer on the layer of thermocouple electrode thin film material of the second compact results in a third compact comprising:

depositing a first thermal resistance layer above the working ends of the first thin film thermocouple and each second thin film thermocouple; depositing a second thermal resistance layer above the external connection end of the first thin-film thermocouple and the external connection point of each second thin-film thermocouple; the thickness of the first thermal resistance layer is larger than that of the second thermal resistance layer.

Specifically, the specific operations of these steps have been described in detail in the foregoing embodiments, and are not described herein again.

In some embodiments, the annealing temperature is 800-1000 ℃, the annealing time is 1-4 hours, the annealing atmosphere is vacuum, and nitrogen can be filled into the annealing furnace.

In some embodiments, the depositing an insulating layer on the dried substrate to obtain a first composite sheet with an insulating layer comprises:

and depositing an insulating layer on the dry substrate by adopting a magnetron sputtering deposition mode to obtain a first composite sheet with the insulating layer.

In some embodiments, the depositing a thermocouple electrode thin film material layer and/or a sensitive grid material layer on the surface of the insulating layer of the first composite sheet to obtain a second composite sheet comprises:

and depositing a thermocouple electrode film material layer on the surface of the insulating layer of the first composite sheet in an ion beam sputtering deposition mode, and depositing a sensitive gate material layer in a magnetron sputtering deposition mode to obtain a second composite sheet.

and depositing a thermal resistance layer on the thermocouple electrode film material layer of the second composite sheet in an ion beam sputtering deposition mode to obtain a third composite sheet.

Specifically, in the deposition process of each part, any practicable deposition mode may be adopted, such as a magnetron sputtering deposition mode, an ion beam sputtering deposition mode, and the like, and the magnetron sputtering deposition mode may include a radio frequency magnetron sputtering method and a direct current magnetron sputtering method, wherein the deposition of the insulating layer preferably adopts a magnetron sputtering deposition mode, and more preferably adopts a radio frequency magnetron sputtering deposition mode; the deposition of the thermocouple electrode film material layer preferably adopts an ion beam sputtering deposition mode; the deposition of the sensitive gate material layer preferably adopts a magnetron sputtering deposition mode, and more preferably adopts a radio frequency magnetron sputtering deposition mode; the deposition of the thermal resistance layer is preferably performed by ion beam sputtering deposition.

Illustratively, as shown in fig. 16, a schematic diagram of a manufacturing process of the thin film sensor provided in this embodiment is provided. The process is illustrated by taking the preparation process of a cross-sectional view along A1-A2 in FIG. 1 as an example, other parts are not shown, and the process specifically comprises the following steps: depositing an insulating layer 12 on the substrate 11, depositing a thermocouple electrode thin film material layer (shown in the figure are thin film material layers of a C electrode and a D electrode of a thin film thermocouple array, and the thin film material layer of a first thin film thermocouple is not shown) and a sensitive gate material layer 15 on the insulating layer 12, depositing a thick thermal resistance layer 17 and a thin thermal resistance layer 18 on the thermocouple electrode thin film material layer, and depositing other relevant parts not shown in FIG. 16, such as a bonding pad, wherein the specific deposition positions can be set according to actual requirements.

In some embodiments, optionally, as shown in fig. 17, a schematic diagram of an exemplary process for preparing the thermal resistance layer provided for this embodiment is provided. Namely, the thick thermal resistance layer 17 and the thin thermal resistance layer 18 can be deposited by first depositing the first thermal resistance layer 19 and then depositing the second thermal resistance layer 20 made of the same material as the first thermal resistance layer on a partial area of the surface of the first thermal resistance layer, and since the two layers are made of the same material, the substantial effect is the same as that of the first thermal resistance layer 17 and the second thermal resistance layer 18, and the specific thicknesses of the first thermal resistance layer 19 and the second thermal resistance layer 20 can be set according to the actual requirements.

In some embodiments, for the case of only one thermal resistance layer 16, the deposition position is the same as the first thermal resistance layer 17, and the specific thickness may be set according to actual requirements, which is not described herein again.

In some embodiments, as shown in fig. 18, an exemplary schematic diagram of a thin thermal resistance layer 18 is provided for the present embodiment, where the thin thermal resistance layer 18 covers two external connection ends (not shown in fig. 18) of a first thin-film thermocouple and an external connection point of each second thin-film thermocouple in the thin-film thermocouple array.

In an exemplary embodiment, as shown in fig. 19, an exemplary three-dimensional structural diagram of the thin-film sensor provided in this embodiment is to be noted that, in order to clearly show the relationship between the first thin-film thermocouple and the thin-film thermocouple array and the thick thermal resistance layer 17 and the thin thermal resistance layer 18, the thick thermal resistance layer 17 and the thin thermal resistance layer 18 are provided with a certain transparency, and in practical applications, the thick thermal resistance layer 17 and the thin thermal resistance layer 18 do not have transparency.

In an exemplary embodiment, the method for manufacturing the thin film sensor may specifically include:

1. putting a titanium alloy substrate with the diameter of 20-100 mm and the thickness of 0.5-1 mm into a glass vessel, pouring enough acetone solvent to cover the base substrate material, putting the glass vessel into an ultrasonic cleaning machine to carry out ultrasonic oscillation for 5min, then putting the ultrasonically cleaned substrate material into an ethanol solution to carry out ultrasonic cleaning for 5min again, then putting the ultrasonically cleaned substrate into deionized water to carry out ultrasonic cleaning for 5min, and then drying the water on the surface of the substrate by dry nitrogen to obtain the dry substrate.

2. The dry substrate is put into a deposition cavity of magnetron sputtering, and a silicon nitride insulating layer with the thickness of 0.05-0.1 mu m is deposited on the surface of the dry substrate in a physical vapor deposition mode.

3. A stainless steel mask plate (namely the first mask plate) of an R-type PtRh13-Pt thermocouple PtRh13 electrode and a substrate are assembled together, fixed by a stainless steel clamp and placed in a deposition chamber of an ion beam sputtering film plating machine. Here, the R-type PtRh13-Pt thermocouple was used for both the first thin film thermocouple and the second thin film thermocouple.

4. And depositing an R-type PtRh13-Pt thermocouple PtRh13 electrode film material on the surface of the insulating layer by using an ion beam sputtering deposition mode, and taking down the first mask.

5. The stainless steel mask (i.e. the second mask) of the R-type PtRh13-Pt thermocouple Pt electrode and the substrate are assembled together, fixed by a stainless steel clamp and placed in a deposition chamber of an ion beam sputtering film plating machine.

6. Depositing R-type PtRh13-Pt thermocouple Pt electrode thin film material on the surface of the insulating layer by using an ion beam sputtering deposition mode, and taking down the second mask.

7. Covering a sensitive grid mask plate around the thermocouple electrode thin film material layer on the insulating layer, and depositing a nichrome target material on the substrate insulating layer in a magnetron sputtering deposition mode to form a nichrome thin film with the thickness of 400-800 nm, so as to obtain the sensitive grid unit.

8. The stainless steel mask plate with thick heat-resistant layer material and the substrate are assembled together and placed in a deposition chamber of an ion beam sputtering film plating machine.

9. Depositing a thermal resistance layer SiO with the thickness of 5-11 mu m₂The thin film material is arranged on the substrate at the joint position of an R-type PtRh13-Pt thermocouple PtRh13 electrode and a Pt electrode (and a hot junction for connecting the two electrodes); and taking down the stainless steel mask plate made of the thick heat-resistant layer material.

10. Assembling a stainless steel mask plate made of a thin heat-resistant layer material with a substrate, and placing the stainless steel mask plate and the substrate in a deposition chamber of an ion beam sputtering coating machine;

11. depositing a thin thermal resistance layer SiO with the thickness of 0.5-1 mu m₂The thin film material is arranged at the connecting point of the adjacent R-type PtRh13-Pt thermocouple PtRh13 electrode and the Pt electrode (namely the outer connecting point of each second thin film thermocouple in the thin film thermocouple array) and the free end (namely the two outer connecting ends) of the electrode of the single R-type PtRh13-Pt thermocouple (namely the first thin film thermocouple) on the substrate, and the stainless steel mask made of the thin heat resistance layer material is taken downAnd (5) film printing.

12. And (3) putting the multilayer thin film sensor prepared by the steps into a high-temperature atmosphere annealing furnace, wherein the annealing temperature is 800-1000 ℃, for example, 1000 ℃, nitrogen is filled into the annealing furnace, the annealing atmosphere is vacuum, and the annealing time is 2 hours, and annealing the prepared thin film sensor.

13. The final thin film sensor was prepared by slicing with a microtome.

14. And respectively welding and connecting two external connection ends of a first thin film thermocouple, two external connection ends of a thin film thermocouple array and two external connection ends of a sensitive grid unit on the thin film sensor with respective compensation leads at a bonding pad through a resistance welding machine.

The thin film sensor prepared by the method integrates the measurement functions of temperature, heat flux density and strain, so that one sensor can simultaneously measure the temperature, the heat flux density and the heat flux.

Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein. This invention is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the invention and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the invention being indicated by the following claims.

It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the invention is limited only by the appended claims.

Claims

1. A thin film sensor, comprising:

a substrate;

an insulating layer disposed on the substrate;

the first thin film thermocouple is used for temperature measurement;

the thin film thermocouple array is used for measuring heat flux density;

the sensitive gate unit is used for strain measurement.

2. The thin film sensor according to claim 1, wherein the first thin film thermocouple comprises a first electrode and a second electrode, one end of the first electrode is connected with one end of the second electrode to form a working end, and the external connection end of the first electrode and the external connection end of the second electrode are respectively used for being connected with a first data collector.

3. The thin film sensor of claim 1, wherein the thin film thermocouple array comprises at least two second thin film thermocouples;

the at least two second thin film thermocouples are connected in series;

and the first external connection end and the second external connection end of the thin film thermocouple array are respectively used for being connected with a second data collector.

4. The thin film sensor of claim 1, wherein the sensitive gate unit comprises at least two resistive gates;

the at least two resistor grids are connected in series;

and the third external connection end and the fourth external connection end of the sensitive grid unit are respectively used for being connected with a dynamic signal test analysis system.

5. The thin film sensor of any one of claims 1-4, further comprising a first thermal resistance layer and a second thermal resistance layer disposed on the first thin film thermocouple and the thin film thermocouple array, the first thermal resistance layer having a thickness greater than a thickness of the second thermal resistance layer;

the working end of the first film thermocouple is in contact with the first thermal resistance layer; the outer connecting end of the first film thermocouple is in contact with the second thermal resistance layer;

the working end of each second film thermocouple in the film thermocouple array is in contact with the first thermal resistance layer, and the external connection point of each second film thermocouple is in contact with the second thermal resistance layer.

6. A method of making a thin film sensor, comprising:

and annealing the third composite sheet to obtain the thin film sensor.

7. The method of claim 6, wherein depositing a thermocouple electrode thin film material layer and a sensitive grid material layer on the surface of the insulating layer of the first composite sheet to obtain a second composite sheet comprises:

depositing a first electrode film material layer of a first film thermocouple and a first electrode film material layer of each second film thermocouple in the film thermocouple array on the surface of the insulating layer;

depositing a second electrode film material of the first film thermocouple and a second electrode film material of each second film thermocouple in the film thermocouple array on the surface of the insulating layer, so that the first electrode film material of the first film thermocouple and the second electrode film material of the first film thermocouple form the first film thermocouple, and the first electrode film material of each second film thermocouple and the second electrode film material of each second film thermocouple form the film thermocouple array;

and depositing a sensitive gate material layer on the surface of the insulating layer around the thermocouple electrode thin film material layer to obtain a second composite sheet.

8. The method of claim 7, wherein depositing the thermal resistance layer on the layer of thermocouple electrode thin film material of the second compact results in a third compact comprising:

depositing a first thermal resistance layer above the working ends of the first thin film thermocouple and each second thin film thermocouple;

depositing a second thermal resistance layer above the external connection end of the first thin-film thermocouple and the external connection point of each second thin-film thermocouple;

the thickness of the first thermal resistance layer is larger than that of the second thermal resistance layer.

9. The method according to claim 6, wherein the annealing temperature is 800 ℃ to 1000 ℃, the annealing time is 1 to 4 hours, and the annealing atmosphere is vacuum.

10. The method of any of claims 6-9, wherein depositing an insulating layer on the dried substrate to obtain a first composite sheet with an insulating layer comprises:

depositing an insulating layer on the dry substrate by adopting a magnetron sputtering deposition mode to obtain a first composite sheet with the insulating layer;

depositing a thermocouple electrode film material layer and a sensitive gate material layer on the surface of the insulating layer of the first composite sheet to obtain a second composite sheet, wherein the second composite sheet comprises:

depositing a thermocouple electrode film material layer on the surface of the insulating layer of the first composite sheet in an ion beam sputtering deposition mode, and depositing a sensitive gate material layer in a magnetron sputtering deposition mode to obtain a second composite sheet;

depositing a first thermal resistance layer and a second thermal resistance layer on the thermocouple electrode thin film material layer of the second composite sheet to obtain a third composite sheet, comprising:

and depositing a first thermal resistance layer and a second thermal resistance layer on the thermocouple electrode film material layer of the second composite sheet in an ion beam sputtering deposition mode to obtain a third composite sheet.