CN110806172A - Sensor, preparation method thereof and integrated strain temperature sensing and measuring system - Google Patents
Sensor, preparation method thereof and integrated strain temperature sensing and measuring system Download PDFInfo
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- CN110806172A CN110806172A CN201911242618.8A CN201911242618A CN110806172A CN 110806172 A CN110806172 A CN 110806172A CN 201911242618 A CN201911242618 A CN 201911242618A CN 110806172 A CN110806172 A CN 110806172A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
- G01B7/16—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge
- G01B7/18—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring the deformation in a solid, e.g. by resistance strain gauge using change in resistance
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/02—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using thermoelectric elements, e.g. thermocouples
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Abstract
The invention discloses a sensor, which integrates strain and temperature measurement and comprises a strain sensing unit, a connecting lead, a flexible substrate and a covering layer, wherein the strain sensing unit and the connecting lead are attached to the flexible substrate, the covering layer is hermetically covered on the strain sensing unit and the connecting lead, the connecting lead is connected with the strain sensing unit and comprises a first lead, a second lead and a third lead, and the second lead and the third lead are connected to the same output pin of the strain sensing unit. The first lead, the second lead and the third lead of the sensor are combined to form three-wire system measurement, so that errors caused by line resistance and line strain due to overlong leads can be eliminated, temperature measurement is realized, temperature errors in strain measurement are compensated by using the measured temperature, and the measurement accuracy of the sensor is further improved.
Description
Technical Field
The invention relates to the technical field of strain-temperature sensing measurement, in particular to a sensor, a preparation method thereof and an integrated strain-temperature sensing measurement system.
Background
In health monitoring of mechanical systems, the aeronautical field, etc., strain and temperature are two very important factors. For example, the stress of the structural part can generate strain during the operation of the machine, the strain can monitor the performance load, and the structural part can be cracked due to overlarge strain; on the other hand, the mechanical system is influenced by the external temperature in the operation process, the performance of the mechanical system is influenced by the change of the temperature, and the system is irreversibly influenced by the out-of-control temperature. Meanwhile, the measurement parameters of the strain sensor can change along with the change of the temperature. The design can measure two parameter sensors of strain and temperature, and has important significance for correcting the strain through the temperature.
In order to complete the health monitoring task of the mechanical system, the aerospace system and other systems, the sensor is required to have the characteristics of high reliability, small volume, small mass and the like on the premise of ensuring the measurement precision. However, most of the current strain and temperature sensors are manufactured on a non-flexible substrate, and the sensors cannot be completely attached to a curved surface of a mechanical system, which can cause measurement errors. In addition, the current sensor mainly measures one parameter independently without combining the two parameters, which causes mutual influence of two measurement quantities and reduces precision, and the arrangement of the two sensors simultaneously causes excessive disorder of leads and space occupation. Although sensors based on simultaneous measurement of temperature and strain of the optical fiber have been developed, the optical fiber has poor mechanical strength and less flexibility in bending than metal, and is not well suited to the described operating conditions. More importantly, when the traditional strain sensor is applied to the detection of a mechanical system structure, the traditional strain sensor is easily influenced by lead resistance and temperature, and the accuracy of a measurement result needs to be further improved.
In conclusion, the research on the thin film type strain-temperature sensor measuring system with the flexible substrate, the small size and the high integration level has double values of scientific research and practical application in the field of structural health monitoring of mechanical systems and the like.
Disclosure of Invention
The invention aims to overcome the defects in the background technology and provides a sensor, a preparation method thereof and an integrated strain temperature sensing and measuring system.
In order to achieve the technical effects, the invention adopts the following technical scheme:
a sensor integrates strain and temperature measurement and comprises a strain sensing unit, a connecting lead, a flexible substrate and a covering layer, wherein the strain sensing unit and the connecting lead are attached to the flexible substrate;
in the sensor, the first lead, the second lead and the third lead are combined to form a three-wire system measurement, so that errors caused by line resistance and line strain due to overlong leads can be eliminated, the second lead and the third lead can form a thermocouple, temperature is measured on one hand, temperature errors in strain measurement are compensated by using the measured temperature, and the measurement accuracy of the sensor is further improved.
Further, the second lead and the strain sensing unit are made of constantan, the first lead and the third lead are made of copper, the flexible substrate is made of polyimide, and the covering layer is made of parylene, so that the sensor has good flexibility and bendability and can be attached to a curved member for measurement.
Meanwhile, the invention also discloses a thin film type integrated strain temperature sensing and measuring system, which comprises the sensor and a measurement compensation circuit; the measurement compensation circuit comprises a three-wire system strain measurement circuit and a thermocouple measurement circuit; the three-wire system strain measurement circuit is used for measuring strain; the thermocouple measuring circuit is used for measuring temperature; the connecting lead is connected into a three-wire strain measuring circuit; in actual measurement, the temperature value measured by the thermocouple measuring circuit is fed back to the three-wire system strain measuring circuit for temperature compensation, so that the strain measurement precision of the sensing measuring system is improved; the thin film type integrated strain temperature sensing and measuring system integrates two signal measuring functions on one sensor, and sensing measurement of temperature and strain is realized by fully utilizing the structural characteristics of the designed sensor instead of simple repeated superposition on the measuring mode; in addition, the measurement signals are complementary, and the measurement accuracy of the sensor is further improved.
Furthermore, the three-wire system strain measurement circuit comprises a Wheatstone bridge circuit, an operational amplification circuit and a low-pass filter circuit, and the three-wire system strain measurement circuit is mainly used for eliminating the influence of overlong wires and temperature change on the resistance of the wires; the wheatstone bridge is connected to three of the connection leads of the sensor, so that the bridge output is balanced in an initial state; in the working state, the lead resistance is eliminated, and even if the resistance changes due to the change of temperature, the output cannot be influenced; the voltage signal output by the Wheatstone bridge circuit is connected into the operational amplification circuit, the operational amplification circuit is a proportional amplification circuit and can amplify the voltage of the connected circuit, and the voltage signal amplified and output by the operational amplification circuit is input into the low-pass filter circuit so as to filter clutter in the signal and improve the measurement precision; the wheatstone bridge circuit, the operational amplifier circuit and the low-pass filter circuit are all the existing mature and common circuit designs, and the three-wire lead is connected into the wheatstone bridge circuit, so that the specific connection mode which can not influence the output even if the resistance changes due to the temperature change is also the prior art, and the detailed description is omitted here.
Furthermore, in the technical scheme of the invention, the thermocouple measuring circuit needs to comprehensively consider the measured cold and hot end temperatures, especially the cold end temperature interference influence, and needs to compensate the cold end temperature interference influence, so that the measuring method based on the analog circuit is adopted in the scheme; the thermocouple measuring circuit comprises a temperature compensation circuit and a low-pass filter circuit, and a voltage signal output by the temperature compensation circuit is input to the low-pass filter circuit; eliminating measurement interference; the temperature compensation circuit and the low-pass filter circuit are conventional mature and common circuit designs, and are not described herein again.
Furthermore, the temperature compensation circuit comprises a temperature sensing chip and a divider resistor, and the divider resistor is connected with the output end of the temperature sensing chip; specifically, the voltage dividing resistor can be realized by a slide rheostat, the voltage dividing function can be realized, and the voltage divided into the thermocouple loop is adjusted according to the sensitivity of the thermocouple, so that the output voltage value change of the thermocouple caused by the cold end temperature change is counteracted, and the cold end temperature is compensated; the specific design of realizing the compensation of the cold end temperature by the temperature sensing chip and the voltage dividing resistor is a common design in the prior art, and is not repeated herein.
Meanwhile, the invention also discloses a preparation method of the sensor, which comprises the following steps:
A. cleaning the silicon wafer, and drying for later use;
B. preparing a sacrificial layer covering the silicon wafer by adopting spin coating and heating processes;
C. preparing a flexible substrate layer on the sacrificial layer by using a polyimide material in a spin coating mode, and carrying out pre-baking curing and imidization treatment;
D. respectively preparing a photoetching copper pattern or a photoetching constantan pattern on the flexible substrate layer by adopting the modes of spin coating, ultraviolet exposure, heating reversal, ultraviolet exposure, development and metal sputtering so as to form a metal sensing layer; wherein, the first lead and the third lead are respectively formed by photoetching the copper patterns; photoetching constantan patterns to respectively form a second lead and a strain sensing unit;
E. depositing parylene on the metal sensing layer to form a covering layer, and stripping a silicon wafer by adopting a TRT transfer printing mode to obtain a sensor; the finished sensor can be uniformly broken in the sacrificial layer between the silicon chip and the flexible substrate layer without damaging the integrity of the flexible substrate layer and breaking the metal sensing layer, so that the complete thin film sensor is finally obtained.
Further, the sacrificial layer in the step B is made of polymethyl methacrylate.
Further, in the step D, the metal chromium is used as an adhesion layer to adhere the metal sensing layer and the flexible substrate layer.
Further, the step D specifically includes: and sequentially carrying out the following procedures of spin-coating photoresist, drying, ultraviolet exposure, heating inversion, ultraviolet exposure, development and sputtering on the flexible substrate layer, firstly sputtering metal chromium, then sputtering copper or constantan, and degumming by using acetone to form a photoetching copper pattern or a photoetching constantan pattern.
Compared with the prior art, the invention has the following beneficial effects:
the thin film type integrated strain temperature sensing and measuring system is composed of a sensor and a measuring and compensating circuit which integrate strain and temperature measurement, wherein the sensor can sense strain signals and measure temperature signals; the measurement compensation circuit adopts a three-wire system measurement scheme, so that the influence caused by the resistance of a line with an overlong connecting lead in a strain area of the sensor can be completely eliminated; in addition, the temperature signal measured by the thermocouple can compensate the temperature of the strain measurement result, so that the strain measurement precision of the sensor is further improved; meanwhile, the sensor is manufactured on the flexible substrate, has good flexible bending performance, can be attached to a curved surface member for measurement, and is small in size of a strain sensitive area, so that the sensor is very suitable for application in the field of health detection of structures which are narrow in installation space, long in measurement line and greatly influenced by temperature
Drawings
FIG. 1 is a schematic view of a sensor of the present invention.
Fig. 2 is a sectional view taken along a-a in fig. 1.
FIG. 3 is a schematic diagram of a three-wire strain measurement circuit in the measurement compensation circuit in one embodiment of the invention.
FIG. 4 is a schematic diagram of a thermocouple measurement circuit in a measurement compensation circuit according to an embodiment of the present invention.
FIG. 5 is a schematic diagram of the temperature compensation of the strain cell of the thin film type integrated strain temperature sensing measurement system of the present invention.
Reference numerals: 1-strain sensing element, 2-first lead, 3-second lead, 4-third lead, 5-cover layer, 6-flexible substrate.
Detailed Description
The invention will be further elucidated and described with reference to the embodiments of the invention described hereinafter.
Example (b):
the first embodiment is as follows:
as shown in fig. 1 and 2, a sensor integrates strain and temperature measurement, and includes a strain sensing unit 1, a connection lead, a flexible substrate 6 and a covering layer 5, wherein the strain sensing unit 1 and the connection lead are orderly attached to the flexible substrate 6, and the covering layer 5 is hermetically covered on the strain sensing unit 1 and the connection lead to hermetically protect the strain sensing unit 1 and the connection lead; the connecting lead is connected with the strain sensing unit 1 and comprises a first lead 2, a second lead 3 and a third lead 4, wherein the second lead 3 and the third lead 4 are connected to the same output end of the strain sensing unit 1.
Specifically, in this embodiment, the second lead 3 and the strain sensing unit 1 are made of constantan, the first lead 2 and the third lead 4 are made of copper, the flexible substrate 6 is made of polyimide, and the covering layer 5 is made of parylene, so that the sensor has good flexibility and bendability, and can be attached to a curved member for measurement.
In the sensor of the embodiment, the first lead 2, the second lead 3 and the third lead 4 are combined to form a three-wire system measurement, which can eliminate errors caused by line resistance and line strain due to overlong leads, wherein the second lead 3 and the third lead 4 form a thermocouple, so that temperature is measured on one hand, and temperature errors during strain measurement are compensated by using the measured temperature, and the measurement accuracy of the sensor is further improved.
When the sensor is manufactured, only the connection terminals of the connection leads are attached to the flexible substrate 6 and are covered by the covering layer 5 in a sealing manner, and the pad ends of the connection leads are exposed so as to be convenient for subsequent cable connection.
Example two
A thin film type integrated strain temperature sensing measurement system comprises a sensor and a measurement compensation circuit in the first embodiment; the measurement compensation circuit comprises a three-wire system strain measurement circuit and a thermocouple measurement circuit; the three-wire system strain measurement circuit is used for measuring strain; the thermocouple measuring circuit is used for measuring temperature; the connecting lead is connected into a three-wire system strain measuring circuit; in actual measurement, the temperature value measured by the thermocouple measuring circuit is fed back to the three-wire system strain measuring circuit for temperature compensation, so that the strain measurement precision of the sensing measuring system is improved; the thin film type integrated strain temperature sensing and measuring system integrates two signal measuring functions on one sensor, and sensing measurement of temperature and strain is realized by fully utilizing the structural characteristics of the designed sensor instead of simple repeated superposition on the measuring mode; in addition, the measurement signals are complementary, and the measurement accuracy of the sensor is further improved.
The three-wire strain measurement circuit has the main functions of eliminating the influence of overlong wires and temperature change on the resistance of the wires; specifically, the three-wire strain measurement circuit of the present embodiment includes a wheatstone bridge circuit, an operational amplifier circuit, and a low-pass filter circuit; the Wheatstone bridge circuit is connected with three leads of the connecting leads of the sensor, so that the output of the bridge can be kept balanced in an initial state; in the working state, the lead resistance is eliminated, and even if the resistance changes due to the change of temperature, the output cannot be influenced; the voltage signal output by the Wheatstone bridge circuit is connected into the operational amplification circuit, the operational amplification circuit is a proportional amplification circuit and can amplify the voltage of the connected circuit, and the voltage signal amplified and output by the operational amplification circuit is input into the low-pass filter circuit so as to filter clutter in the signal and improve the measurement precision.
Specifically, as shown in fig. 3, the wheatstone bridge circuit in the present embodiment specifically includes a fixed resistor R1, a fixed resistor R2, a line resistor RL1, a line resistor RL2, a sensor RS, and a sliding rheostat RV 2; the operational amplification circuit comprises a fixed resistor R3, a slide rheostat RV3 and an operational amplifier U1; the operational amplifier circuit is a proportional amplifier circuit, and the amplification factor is controlled by adjusting the size of the slide rheostat RV 3. The low-pass filter circuit specifically comprises a fixed resistor R4, a fixed resistor R5, a sliding rheostat RV4, an operational amplifier U2 and a capacitor C1, and the filter circuit is mainly used for filtering noise waves in signals and improving the measurement accuracy.
Specifically, in the technical scheme of this embodiment, the thermocouple measurement circuit needs to comprehensively consider measured cold and hot end temperatures, especially cold end temperature interference influence, and needs to compensate the cold end temperature interference influence, so that the scheme adopts a measurement method based on an analog circuit; the thermocouple measuring circuit comprises a temperature compensation circuit and a low-pass filter circuit, specifically, as shown in fig. 4, in this embodiment, the temperature compensation circuit passes through a temperature sensing chip LM35 and a voltage dividing resistor, wherein the voltage dividing resistor is realized by a slide rheostat RV6, which can realize a voltage dividing function, and adjust the voltage divided into a thermocouple loop according to the sensitivity of the thermocouple, thereby counteracting the change of the thermocouple output voltage value caused by the cold junction temperature change, and compensating the cold junction temperature. The voltage signal output by the temperature compensation circuit is input to a low-pass filter circuit to eliminate measurement interference, and the low-pass filter circuit of the embodiment shown in fig. 4 has the same structure as the three-wire strain measurement circuit, and specifically includes a resistor R7, a fixed resistor R8, a sliding rheostat RV5, an operational amplifier U3, and a capacitor C2.
Fig. 5 shows a schematic diagram of the temperature compensation principle of the strain cell of the thin film type integrated strain temperature sensing measurement system of the present embodiment. In the thin film type integrated strain temperature sensing and measuring system of the present embodiment, the output signal of the sensor strain sensing unit 1 includes a strain-induced voltage difference Δ VεAnd a voltage difference Δ V caused by the ambient temperatureTAmong them, the voltage difference signal caused by the ambient temperature is an unwanted interference signal, which reduces the accuracy of the measurement, and therefore needs to be filtered out. Specifically, the calculation formula of the voltage difference caused by the ambient temperature is as follows: Δ VT＝IR0(1+ α Δ T); itsIn, I is the input current; r0The initial resistance value of the strain measurement unit, α the temperature coefficient of resistance of the sensitive grid material of the strain measurement unit, and deltaT the variation value of temperature.
The signal measured by the thermocouple measuring circuit can be converted into an initial temperature difference digital signal after A/D conversion, so that the temperature difference delta T can be obtained, the temperature difference measured by the thermocouple measuring circuit is fed back to the temperature difference signal calculation formula, and the voltage difference delta V caused by the environment temperature can be calculatedTThen, the calculated voltage difference value delta V caused by the environmental temperature is subtracted from the voltage difference value of the output signal of the sensor strain sensing unit 1TThe voltage difference delta V caused by strain can be obtainedεThereby eliminating the influence of temperature on strain measurement.
EXAMPLE III
Meanwhile, a method for manufacturing a sensor according to an embodiment includes the following steps:
And 3, spin-coating the PI (polyimide) substrate, specifically, in the embodiment, the spin-coating parameters of the PI are 500rpm and 15s at the rotating speed, then 1500rpm and 45s at the accelerated speed of 500r/s and 1000-2000cp at low viscosity are spin-coated for one layer, then 5000-6000cp at high viscosity is spin-coated for one layer, pre-drying is carried out at the temperature of 90 ℃, heat preservation is carried out at the temperature of 220 ℃ for 1h, and the polyimide is imidized.
Manufacturing a metal sensing layer of the sensor can be realized through the steps 4 and 5, wherein the first lead 2 and the third lead 4 are respectively formed by photoetching copper patterns; the constantan pattern is photoetched to form the second lead 3 and the strain sensing unit 1, respectively. It should be noted that, in this embodiment, the example is to first photo-etch the copper pattern and then photo-etch the constantan pattern, and in practice, the example may also be to first photo-etch the constantan pattern and then photo-etch the copper pattern.
And 6, depositing parylene as a covering layer 5, attaching a TRT adhesive tape on the surface of the sensor, separating a sensor sheet finished product from a silicon wafer substrate, and then placing the TRT adhesive tape on a hot plate to be heated at 130 ℃ for 1 minute, so that the adhesive layer of the TRT adhesive tape is inactivated and the sensor is separated to obtain the complete sensor.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. The utility model provides a sensor, collects and meets an emergency and temperature measurement in an organic whole, its characterized in that, including meeting an emergency sensing unit, connecting lead wire, flexible substrate and overburden, meeting an emergency sensing unit and connecting lead wire all attach in flexible substrate, and the overburden is sealed to be covered on meeting an emergency sensing unit and connecting lead wire, connecting lead wire and meeting an emergency sensing unit link to each other, and connecting lead wire includes first lead wire, second lead wire and third lead wire, and wherein, second lead wire and third lead wire are connected on the same output pin of meeting an emergency sensing unit.
2. The sensor of claim 1, wherein the second lead and the strain sensing element are made of constantan, the first lead and the third lead are made of copper, the flexible substrate is made of polyimide, and the cover layer is made of parylene.
3. A thin film type integrated strain temperature sensing measurement system comprising the sensor of claim 1 or 2 and a measurement compensation circuit; the measurement compensation circuit comprises a three-wire system strain measurement circuit and a thermocouple measurement circuit; the three-wire system strain measurement circuit is used for measuring strain; the thermocouple measuring circuit is used for measuring temperature; and three leads of the connecting lead are connected into the three-wire system strain measuring circuit.
4. The thin film type integrated strain temperature sensing measurement system according to claim 3, wherein the three-wire strain measurement circuit comprises a Wheatstone bridge, an operational amplifier circuit and a low-pass filter circuit, the Wheatstone bridge is connected with three leads of the connecting leads of the sensor; the voltage signal output by the Wheatstone bridge circuit is connected into the operational amplification circuit, the operational amplification circuit is a proportional amplification circuit, and the voltage signal amplified and output by the operational amplification circuit is input into the low-pass filter circuit to filter out clutter in the signal.
5. The thin film type integrated strain temperature sensing measuring system according to claim 3, wherein the thermocouple measuring circuit comprises a temperature compensation circuit and a low-pass filter circuit, and a voltage signal output by the temperature compensation circuit is input to the low-pass filter circuit.
6. The thin film type integrated strain temperature sensing and measuring system according to claim 5, wherein the temperature compensation circuit comprises a temperature sensing chip and a voltage dividing resistor, and the voltage dividing resistor is connected with an output end of the temperature sensing chip.
7. A method of manufacturing a sensor as claimed in claim 1 or 2, comprising the steps of:
A. cleaning the silicon wafer, and drying for later use;
B. preparing a sacrificial layer covering the silicon wafer by adopting spin coating and heating processes;
C. preparing a flexible substrate layer on the sacrificial layer by using a polyimide material in a spin coating mode, and carrying out pre-baking curing and imidization treatment;
D. respectively preparing a photoetching copper pattern or a photoetching constantan pattern on the flexible substrate layer by adopting the modes of spin coating, ultraviolet exposure, heating reversal, ultraviolet exposure, development and metal sputtering so as to form a metal sensing layer; wherein, the first lead and the third lead are respectively formed by photoetching the copper patterns; photoetching constantan patterns to respectively form a second lead and a strain sensing unit;
E. and depositing parylene on the metal sensing layer to form a covering layer, and stripping the silicon wafer by adopting a TRT transfer printing mode to obtain the sensor.
8. The method of manufacturing a sensor according to claim 7, wherein the sacrificial layer in the step B is made of polymethyl methacrylate.
9. The method of claim 7, wherein in step D, the metal sensing layer is adhered to the flexible substrate layer by using chromium metal as an adhesion layer.
10. The method for preparing a sensor according to claim 9, wherein the step D specifically comprises: and sequentially carrying out the following procedures of spin-coating photoresist, drying, ultraviolet exposure, heating inversion, ultraviolet exposure, development and sputtering on the flexible substrate layer, firstly sputtering metal chromium, then sputtering copper or constantan, and degumming by using acetone to form a photoetching copper pattern or a photoetching constantan pattern.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111912462A (en) * | 2020-08-12 | 2020-11-10 | 东南大学 | Multifunctional flexible touch sensor with sliding sense, pressure sense and temperature sense |
| CN112857439A (en) * | 2021-01-06 | 2021-05-28 | 中北大学 | Thin film sensor and preparation method thereof |
-
2019
- 2019-12-06 CN CN201911242618.8A patent/CN110806172A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111912462A (en) * | 2020-08-12 | 2020-11-10 | 东南大学 | Multifunctional flexible touch sensor with sliding sense, pressure sense and temperature sense |
| CN112857439A (en) * | 2021-01-06 | 2021-05-28 | 中北大学 | Thin film sensor and preparation method thereof |
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