CN112846560A - Processing method of target material assembly before welding - Google Patents
Processing method of target material assembly before welding Download PDFInfo
- Publication number
- CN112846560A CN112846560A CN202110002835.0A CN202110002835A CN112846560A CN 112846560 A CN112846560 A CN 112846560A CN 202110002835 A CN202110002835 A CN 202110002835A CN 112846560 A CN112846560 A CN 112846560A
- Authority
- CN
- China
- Prior art keywords
- infiltration
- target
- back plate
- soaking
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K31/00—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups
- B23K31/02—Processes relevant to this subclass, specially adapted for particular articles or purposes, but not covered by only one of the preceding main groups relating to soldering or welding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
- B23K2103/12—Copper or alloys thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Abstract
The invention provides a processing method before welding of a target assembly, which comprises the following steps: respectively and sequentially carrying out primary infiltration, secondary infiltration and tertiary infiltration on the target and the back plate; cooling the target and the back plate to room temperature after the secondary infiltration; by adopting a step-by-step infiltration mode, after the C-SiC target is welded with the copper back plate, the welding bonding rate of the target component is greatly improved; the processing method before welding of the target assembly provided by the invention is simple to operate and saves cost.
Description
Technical Field
The invention relates to the technical field of welding, in particular to a processing method of a target assembly before welding.
Background
Solder bonding refers to a soldering method in which a filler metal (referred to as a solder or a solder) having a melting point lower than that of a base material (material to be soldered) is wetted and spread on the surface of the base material by a liquid solder at a temperature lower than the melting point of the base material and higher than the melting point of the solder, and the filler metal and the liquid solder fill gaps between the base material, dissolve and diffuse with each other with the base material, and then cool to solidify the solder to connect parts; when the welding flux is combined, pressure is not required to be applied to the welding part, the deformation of the welding part caused by the action of gravity is avoided, and the welding method is simple and quick.
At present, the key point of the research of solder bonding is to select a proper solder according to the properties of a base material, reduce the use of the solder as much as possible, improve the recovery rate of the solder so as to reduce the production cost, and select a proper welding method so as to improve the welding effect.
CN111195768A discloses a welding method of a C-SiC sputtering target, which comprises the steps of shielding the C-SiC target and a back plate, placing a solder, heating and simultaneously carrying out infiltration treatment; arranging a molten pool on the back plate, placing welding flux and arranging copper wires at equal intervals; the C-SiC target and the back plate are buckled, assembled and welded, but the welding method involves copper wires and is complex to operate.
CN110666281A discloses a brazing method for an aluminum target and a copper-containing backing plate, which comprises respectively performing infiltration treatment on the aluminum target and the copper-containing backing plate by using different solders, and then combining the two to complete the welding process.
CN106695109B discloses a method for manufacturing a nickel-chromium target assembly, which comprises: placing the solder on the welding surface of the back plate and the nickel-chromium target; heating to melt the solder; carrying out first ultrasonic treatment on the welding surface of the back plate and the nickel-chromium target material to soak the welding surface; putting solder on the welding surface of the back plate again, and carrying out second ultrasonic treatment on the welding surface of the back plate and the nickel-chromium target; the back plate is attached to the welding surface of the nickel-chromium target material for welding; and cooling after welding to form the target assembly.
The C-SiC has low density and is easy to break under extreme rapid cooling from high temperature to low temperature. The C-SiC target welding back plate is mainly made of an oxygen-free copper material and has high hardness and strength. When the C-SiC target material is welded, the material is easy to fall off and is extremely difficult to soak during soaking, and the conditions of large-area welding defects and welding failure frequently occur.
Therefore, there is a need to develop a treatment method for improving the welding effect of the C-SiC target.
Disclosure of Invention
In view of the problems in the prior art, the invention provides a treatment method before target welding, the treatment method comprises the steps of soaking step by step, cooling the target and the back plate to room temperature after secondary soaking, and after welding the C-SiC target and the copper back plate, the welding bonding rate of the target assembly can be greatly improved, the operation is simple and convenient, and the cost is saved.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a processing method before welding of a target assembly, which comprises the following steps: respectively and sequentially carrying out primary infiltration, secondary infiltration and tertiary infiltration on the target and the back plate; and respectively cooling the target and the back plate to room temperature between the second infiltration and the third infiltration.
According to the invention, the target material and the back plate are respectively subjected to primary infiltration, secondary infiltration and tertiary infiltration in sequence, so that solder can be wetted, spread and fill gaps on the surfaces of the target material and the back plate, the target material and the back plate are naturally cooled to room temperature along with a heating device after the secondary infiltration, and the gas in the SiC gap can be fully released after the target material and the back plate are cooled after the infiltration, so that the gaps are fully filled with the solder, and the reduction of the breakage phenomenon of the target material and the back plate during welding is facilitated.
Preferably, the material of the target comprises C-SiC.
The welding of the C-SiC target assembly is easy to fall powder and difficult to soak, the conditions of large-area welding defects and welding failures are frequently generated, the three soaking steps of the invention can wet, spread and fill gaps of the solder on the surfaces of the target and the back plate, and the welding combination rate of the target assembly can be greatly improved.
Preferably, the material of the back plate comprises a copper alloy.
Preferably, the temperature of the first soaking is 200-240 ℃, for example, 200 ℃, 204 ℃, 208 ℃, 212 ℃, 216 ℃, 220 ℃, 224 ℃, 228 ℃, 232 ℃, 236 ℃ or 240 ℃ and the like.
Preferably, the immersion liquid in the first immersion comprises indium solder.
The indium solder has the advantages of low melting point, good ductility and the like, reduces the use temperature of the target material during welding, and reduces the deformation of the back plate during high temperature and cooling.
Preferably, the addition amount of the impregnating solution in the primary infiltration is 0.32-0.48 g/cm2For example, it may be 0.32g/cm2、0.34g/cm2、0.36g/cm2、0.38g/cm2、0.4g/cm2、0.42g/cm2、0.44g/cm2、0.46g/cm2Or 0.48g/cm2And the like.
Preferably, the time for the first soaking is 20-30 min, for example, 20min, 21min, 22min, 23min, 24min, 25min, 26min, 27min, 28min, 29min or 30 min.
Preferably, the first infiltration is performed in an ultrasonic treatment.
Preferably, the power of the ultrasonic wave is 300-500W, for example, 300W, 320W, 340W, 360W, 380W, 400W, 420W, 440W, 460W, 480W, 500W, etc.
The primary infiltration is carried out in the ultrasonic treatment, and the solder is primarily spread on the surfaces of the target and the back plate, so that the secondary infiltration is promoted.
Preferably, the impregnating solution in the second wetting comprises indium solder.
The indium solder has the advantages of low melting point, good ductility and the like, reduces the use temperature of the target material during welding, and reduces the deformation of the back plate during high temperature and cooling.
Preferably, the addition amount of the impregnating solution in the secondary infiltration is 0.64-0.96 g/cm2For example, it may be 0.64g/cm2、0.68g/cm2、0.72g/cm2、0.76g/cm2、0.8g/cm2、0.84g/cm2、0.88g/cm2、0.92g/cm2Or 0.96g/cm2And the like.
Preferably, the temperature of the secondary infiltration is 200 to 240 ℃, for example, 200 ℃, 204 ℃, 208 ℃, 212 ℃, 216 ℃, 220 ℃, 224 ℃, 228 ℃, 232 ℃, 236 ℃ or 240 ℃ and the like.
Preferably, the time for the secondary soaking is 4-5 h, for example, 4h, 4.1h, 4.2h, 4.3h, 4.4h, 4.5h, 4.6h, 4.7h, 4.8h, 4.9h or 5h, etc.
Preferably, the interval time between the second soaking and the third soaking is 20-28 h, for example, 20h, 21h, 22h, 23h, 24h, 25h, 26h, 27h or 28 h.
Preferably, in the interval time between the second infiltration and the third infiltration, the target and the back plate after the second infiltration are respectively cooled to room temperature.
Preferably, the target material and the back plate are placed in a heating device, and after the heating and the heat preservation are stopped, the target material and the back plate are cooled to room temperature along with the heating device.
In the invention, after the secondary infiltration, the target and the back plate are naturally cooled to room temperature along with the heating device, so that the target can be cooled at a slower speed, and the target is prevented from being cracked due to quick cooling.
Preferably, the three infiltrations comprise: and (5) carrying out temperature preservation after the temperature is programmed to the final temperature.
Preferably, the temperature rise rate of the three-time soaking is 130-240 ℃/h, for example, 130 ℃/h, 140 ℃/h, 150 ℃/h, 160 ℃/h, 170 ℃/h, 180 ℃/h, 190 ℃/h, 200 ℃/h, 210 ℃/h, 220 ℃/h, 230 ℃/h or 240 ℃/h and the like.
Preferably, the final temperature of the third soaking is 200-240 ℃, for example, 200 ℃, 204 ℃, 208 ℃, 212 ℃, 216 ℃, 220 ℃, 224 ℃, 228 ℃, 232 ℃, 236 ℃ or 240 ℃ and the like.
Preferably, the holding time of the final temperature in the three soakings is 5-15 min, for example, 5min, 6min, 7min, 8min, 9min, 10min, 11min, 12min, 13min, 14min or 15min, and the like.
The three-time soaking time is 5-15 min, so that the surface can be well soaked, and the solder can be prevented from being oxidized due to long-time exposure in the air.
Preferably, the three wettings include indium solder.
The indium solder has the advantages of low melting point, good ductility and the like, reduces the use temperature of the target material during welding, and reduces the deformation of the back plate during high temperature and cooling.
Preferably, the addition amount of the impregnating solution in the three soakings is 0.64-0.96 g/cm2For example, it may be 0.64g/cm2、0.68g/cm2、0.72g/cm2、0.76g/cm2、0.8g/cm2、0.84g/cm2、0.88g/cm2、0.92g/cm2Or 0.96g/cm2And the like.
Preferably, the thicknesses of the indium solders in the target and the back plate after the three wettings are 1-2 mm, for example, 1mm, 1.1mm, 1.2mm, 1.3mm, 1.4mm, 1.5mm, 1.6mm, 1.7mm, 1.8mm, 1.9mm, or 2mm, and the like may be used.
As a preferred technical solution of the present invention, the processing method includes the steps of:
(1) primary infiltration: respectively soaking the target and the back plate for 20-30 min once under the ultrasonic treatment with the power of 300-500W, wherein the soaking liquid is indium solder, and the adding amount is 0.32-0.48 g/cm2The temperature is 200-240 ℃;
(2) and (3) secondary infiltration: respectively carrying out secondary infiltration on the target and the back plate after the primary infiltration at the temperature of 200-240 ℃ for 4-5 hours, wherein the infiltration liquid is indium solder, and the addition amount is 0.64-0.96 g/cm2；
(3) And (3) three-time infiltration: the interval time between the second infiltration and the third infiltration is 20-28 hours, the target and the back plate after the second infiltration are respectively cooled to room temperature in the interval time, the temperature is raised at the rate of 130-240 ℃/h, the target and the back plate after the second infiltration are respectively infiltrated for 5-15 minutes at the final temperature of 200-240 ℃, the infiltration liquid is indium solder, and the addition amount is 0.64-0.96 g/cm2。
Compared with the prior art, the invention has at least the following beneficial effects:
(1) according to the treatment method before welding of the target assembly, the target and the back plate are sequentially subjected to primary infiltration, secondary infiltration and tertiary infiltration, and the target and the back plate are naturally cooled to room temperature along with the heating device after the secondary infiltration, so that the welding bonding rate of the target assembly can be increased to more than 70%, and can be increased to more than 97% under the optimal condition;
(2) the processing method before welding of the target assembly provided by the invention is simple to operate and saves cost.
Drawings
Fig. 1 is a schematic diagram of the target after being wetted in example 1 of the present invention.
Fig. 2 is an ultrasonic scanning inspection diagram of the target assembly after welding according to example 1 of the present invention.
Fig. 3 is a schematic diagram of the target material of comparative example 5 according to the present invention after infiltration.
Fig. 4 is an ultrasonic scan inspection of the target assembly of comparative example 5 of the present invention after welding.
Detailed Description
The technical scheme of the invention is further explained by the specific implementation mode in combination with the attached drawings.
The present invention is described in further detail below. The following examples are merely illustrative of the present invention and do not represent or limit the scope of the claims, which are defined by the claims.
The invention provides a processing method before target welding, which comprises the following steps:
(1) primary infiltration: respectively soaking the target and the back plate for 20-30 min in a heating furnace under the ultrasonic treatment with the power of 300-500W, wherein the soaking liquid is indium solder, and the adding amount is 0.32-0.48 g/cm2The temperature is 200-240 ℃;
(2) and (3) secondary infiltration: respectively carrying out secondary infiltration on the target and the back plate after the primary infiltration at the temperature of 200-240 ℃ for 4-5 hours, wherein the infiltration liquid is indium solder, and the addition amount is 0.64-0.96 g/cm2；
(3) And (3) three-time infiltration: the interval time between the second infiltration and the third infiltration is 20-28 hours, the target and the back plate after the second infiltration are respectively cooled to room temperature in the interval time, the temperature of a heating furnace is raised at the speed of 130-240 ℃/h, the target and the back plate after the second infiltration are respectively infiltrated for 5-15 minutes at the final temperature of 200-240 ℃, the infiltration liquid is indium solder, and the addition amount is 0.64-0.96 g/cm2。
First, an embodiment
Example 1
The embodiment provides a processing method before welding of a target assembly, which comprises the following steps:
(1) primary infiltration: respectively soaking the C-SiC target and the TU1 back plate for 25min in a heating furnace under the ultrasonic treatment of 400W, wherein the soaking liquid is indium solder, and the adding amount is 0.4g/cm2The temperature is 220 ℃;
(2) and (3) secondary infiltration: respectively carrying out secondary infiltration on the C-SiC target material and the TU1 backboard after the primary infiltration at 200 ℃ for 5 hours, wherein the infiltration liquid is indium solder, and the addition amount is 0.8g/cm2；
(3) And (3) three-time infiltration: the interval time between the secondary infiltration and the third infiltration is 24 hours, the C-SiC target and the TU1 backboard after the secondary infiltration are respectively cooled to room temperature in the interval time, the temperature of a heating furnace is raised at the speed of 200 ℃/h, the C-SiC target and the TU1 backboard after the secondary infiltration are infiltrated for 10 minutes at the final temperature of 220 ℃, the infiltration liquid is indium solder, the addition amount is 0.8g/cm2。
Fig. 1 is a schematic diagram of the target of the present embodiment after being wetted, and it can be seen that the indium solder is more uniformly spread on the surface of the target.
Fig. 2 is an ultrasonic scanning detection diagram of the target assembly of the present embodiment after welding, and it can be seen from the diagram that the target assembly of the present embodiment is well welded.
Example 2
The embodiment provides a processing method before welding of a target assembly, which comprises the following steps:
(1) primary infiltration: respectively soaking the C-SiC target and the TU1 back plate for 30min in a heating furnace under the ultrasonic treatment with the power of 300W, wherein the soaking liquid is indium solder, and the adding amount is 0.32g/cm2The temperature is 200 ℃;
(2) and (3) secondary infiltration: respectively carrying out secondary infiltration on the C-SiC target material and the TU1 backboard after the primary infiltration at 200 ℃ for 4.5h, wherein the infiltration liquid is indium solder, and the addition amount is 0.64g/cm2；
(3) And (3) three-time infiltration: the interval time between the second infiltration and the third infiltration is 20hIn the interval, the C-SiC target and the TU1 backboard after the secondary infiltration are respectively cooled to room temperature, the heating furnace is heated at the speed of 240 ℃/h, the C-SiC target and the TU1 backboard after the secondary infiltration are infiltrated for three times for 5min at the final temperature of 240 ℃, the infiltration liquid is indium solder, and the addition amount is 0.96g/cm2。
Example 3
The embodiment provides a processing method before welding of a target assembly, which comprises the following steps:
(1) primary infiltration: respectively soaking the C-SiC target and the TU1 back plate for 20min in a heating furnace under the ultrasonic treatment of 500W, wherein the soaking liquid is indium solder, and the adding amount is 0.48g/cm2The temperature is 240 ℃;
(2) and (3) secondary infiltration: respectively carrying out secondary infiltration on the C-SiC target material and the TU1 back plate subjected to the primary infiltration at 240 ℃ for 4 hours, wherein the infiltration liquid is indium solder, and the addition amount is 0.96g/cm2；
(3) And (3) three-time infiltration: the interval time between the secondary infiltration and the third infiltration is 28 hours, the C-SiC target and the TU1 backboard after the secondary infiltration are respectively cooled to room temperature in the interval time, the temperature of a heating furnace is raised at the speed of 130 ℃/h, the C-SiC target and the TU1 backboard after the secondary infiltration are infiltrated for 15 minutes at the final temperature of 200 ℃, the infiltration liquid is indium solder, the addition amount is 0.64g/cm2。
Example 4
This example provides a processing method before welding of a target assembly, which is different from example 1 only in that the time for three wettings in step (3) is controlled to be 3min, and the rest is the same as example 1.
Example 5
This example provides a processing method before welding of a target assembly, which is different from example 1 only in that the time for three wettings in step (3) is controlled to be 20min, and the rest is the same as example 1.
Example 6
This example provides a method of processing a target assembly before welding, which differs from example 1 only in that the solder in steps (1), (2) and (3) is replaced with tin solder, and the rest is the same as example 1.
Example 7
This example provides a treatment method before welding of a target assembly, which is different from example 1 only in that ultrasonic treatment is not performed in step (1), and the rest is the same as example 1.
Second, comparative example
Comparative example 1
The comparative example provides a treatment method before welding of the target assembly, and the treatment method is different from the treatment method in the example 1 only in that the natural cooling to the room temperature in the step (2) is replaced by placing the target assembly on a water cooling table for cooling, and the rest is the same as the example 1.
In this comparative example, the target assembly was cooled too quickly and cracking occurred.
Comparative example 2
This comparative example provides a treatment method before welding of a target assembly, which is different from example 1 only in that step (1) is not performed, and the rest is the same as example 1.
Comparative example 3
This comparative example provides a treatment method before welding of a target assembly, which is different from example 1 only in that step (2) is not performed, and the rest is the same as example 1.
Comparative example 4
This comparative example provides a treatment method before welding of a target assembly, which is different from example 1 only in that step (3) is not performed, and the rest is the same as example 1.
Comparative example 5
The comparative example provides a treatment method before welding of a target assembly, which comprises the following steps:
respectively soaking the C-SiC target and the TU1 backboard for 180min in a heating furnace under the ultrasonic treatment with the power of 400W, wherein the soaking liquid is indium solder, and the adding amount is 0.8g/cm2The temperature was 240 ℃.
FIG. 3 is a schematic diagram of the target material of the present comparative example after being wetted, and it can be seen that the indium solder on the surface of the target material is not uniformly spread.
Fig. 4 is an ultrasonic scanning detection diagram of the target assembly of the present comparative example after welding, and it can be seen from the diagram that the target assembly of the present comparative example has poor welding effect and has a plurality of welding defects.
Third, test and results
The method for testing the welding bonding rate of the C-SiC target and the TU1 back plate comprises the following steps: an ultrasonic flaw detector with the model number of YD-1526 is adopted for testing, wherein the detection conditions are as follows: the probe is 15MHZ, the material sound velocity is 4700, the scanning speed is 450mm/S, the threshold value is TH60, and the sensitivity is 67 DB.
The test results of the above examples and comparative examples are shown in table 1.
TABLE 1
In Table 1, "-" indicates that the target assembly was cracked.
From table 1, the following points can be seen:
(1) the invention provides a processing method before welding of a target assembly, which comprises the following steps: respectively and sequentially carrying out primary infiltration, secondary infiltration and tertiary infiltration on the target and the back plate; between the second infiltration and the third infiltration, the target and the back plate are respectively cooled to room temperature, the processing method improves the welding bonding rate of the target assembly, specifically, in embodiments 1 to 7, the welding bonding rate of the target assembly is over 70%, and under an optimized condition, the welding bonding rate is over 97%;
(2) as can be seen from the combination of the embodiment 1 and the embodiments 4 to 5, the time for the three-time soaking in the step (3) of the embodiment 1 is controlled to be 10min, and compared with the time for the three-time soaking in the step (3) of the embodiments 4 to 5 which is controlled to be 3min and 20min, the welding bonding rate of the target assembly in the embodiment 1 is 97%, and the welding bonding rates of the target assemblies in the embodiments 4 to 5 are 90% and 92%, respectively, which indicates that the welding bonding rate of the target assembly can be further improved by controlling the time for the three-time soaking in the step (3) within a certain range;
(3) by combining the example 1 and the example 6, it is known that the indium solder is used as the solder in the example 1, and compared with the tin solder used as the solder in the example 6, the welding bonding rate of the target assembly in the example 1 is 97%, and the welding bonding rate of the target assembly in the example 6 is 70%, which indicates that the indium solder used in the present invention can further improve the welding bonding rate of the target assembly;
(4) as can be seen from the combination of example 1 and example 7, when the ultrasonic treatment is performed in the step (1) of example 1, the welding bonding rate of the target assembly in example 1 is 97% and the welding bonding rate of the target assembly in example 7 is 80% compared to the case where the ultrasonic treatment is not performed in the step (1) of example 7, which indicates that the ultrasonic treatment performed in the step (1) of the present invention can further improve the welding bonding rate of the target assembly;
(5) by combining the example 1 and the comparative example 1, it can be seen that the step (2) in the example 1 adopts natural cooling, and compared with the step (2) in the comparative example 1 adopting water cooling, the welding bonding rate of the target assembly in the example 1 is 97%, and the target assembly in the comparative example 1 cracks, so that the step (2) in the invention adopts natural cooling to improve the welding bonding rate of the target assembly;
(6) by combining the example 1 and the comparative example 2, it can be seen that, when the step (1) one infiltration process is performed in the example 1, the welding bonding rate of the target assembly in the example 1 is 97% and the welding bonding rate of the target assembly in the comparative example 2 is 80% compared to the case that the step (1) one infiltration process is not performed in the comparative example 2, and thus, the welding bonding rate of the target assembly can be improved by performing the step (1) one infiltration process in the present invention;
(7) by combining the example 1 and the comparative example 3, it can be seen that the step (2) secondary infiltration process is performed in the example 1, and compared with the step (2) secondary infiltration process which is not performed in the comparative example 3, the welding bonding rate of the target assembly in the example 1 is 97%, and the welding bonding rate of the target assembly in the comparative example 3 is 70%, which indicates that the welding bonding rate of the target assembly can be improved by performing the step (2) secondary infiltration process in the present invention;
(8) by combining the example 1 and the comparative example 4, it can be seen that the welding bonding rate of the target assembly in the example 1 is 97% and the welding bonding rate of the target assembly in the comparative example 4 is 60% when the three infiltration processes of the step (3) are performed in the example 1, compared with the case that the three infiltration processes of the step (3) are not performed in the comparative example 4, and thus, the welding bonding rate of the target assembly can be improved by performing the three infiltration processes of the step (3) in the present invention;
(9) it can be seen from the combination of example 1 and comparative example 5 that, when the target assembly provided by the present invention is processed before welding in example 1, the welding bonding rate of the target assembly in example 1 is 97%, and the welding bonding rate of the target assembly in comparative example 5 is 80%, compared with the processing method of the target assembly in the prior art before welding in comparative example 5, which shows that the processing method of the target assembly provided by the present invention before welding can improve the welding bonding rate of the target assembly.
In summary, according to the processing method before welding of the target assembly provided by the invention, the target and the back plate are sequentially subjected to primary infiltration, secondary infiltration and tertiary infiltration, and after the secondary infiltration, the target and the back plate are naturally cooled to room temperature along with the heating device, so that the welding bonding rate of the target assembly can be increased to more than 70%, and can be increased to more than 97% under the optimal condition.
The applicant declares that the present invention illustrates the detailed structural features of the present invention through the above embodiments, but the present invention is not limited to the above detailed structural features, that is, it does not mean that the present invention must be implemented depending on the above detailed structural features. It should be understood by those skilled in the art that any modifications of the present invention, equivalent substitutions of selected components of the present invention, additions of auxiliary components, selection of specific modes, etc., are within the scope and disclosure of the present invention.
Claims (10)
1. A processing method before welding of a target assembly is characterized by comprising the following steps: respectively and sequentially carrying out primary infiltration, secondary infiltration and tertiary infiltration on the target and the back plate;
and respectively cooling the target and the back plate to room temperature between the second infiltration and the third infiltration.
2. The process of claim 1, wherein the target material comprises C-SiC;
preferably, the material of the back plate comprises a copper alloy.
3. The treatment method according to claim 1 or 2, wherein the temperature of the primary soaking is 200-240 ℃;
preferably, the impregnating solution in the primary wetting comprises indium solder;
preferably, the addition amount of the impregnating solution in the primary infiltration is 0.32-0.48 g/cm2；
Preferably, the primary soaking time is 20-30 min.
4. The treatment method according to any one of claims 1 to 3, wherein the primary soaking is performed in an ultrasonic treatment;
preferably, the power of the ultrasonic wave is 300-500W.
5. The treatment method according to any one of claims 1 to 4, wherein the impregnating solution in the secondary impregnation comprises indium solder;
preferably, the addition amount of the impregnating solution in the secondary infiltration is 0.64-0.96 g/cm2。
6. The treatment method according to any one of claims 1 to 5, wherein the temperature of the secondary infiltration is 200 to 240 ℃;
preferably, the time of the secondary infiltration is 4-5 h.
7. The treatment method according to any one of claims 1 to 6, wherein the time interval between the second soaking and the third soaking is 20 to 28 hours;
preferably, in the interval time between the second infiltration and the third infiltration, the target and the back plate after the second infiltration are respectively cooled to room temperature.
8. The treatment method according to any one of claims 1 to 7, wherein the three infiltrations comprise: heating to the final temperature by a program and then preserving heat;
preferably, the temperature rise rate of the three times of soaking is 130-240 ℃/h;
preferably, the final temperature of the three soakings is 200-240 ℃;
preferably, the final temperature keeping time in the three soakings is 5-15 min;
preferably, the immersion liquid in the three wettings comprises indium solder;
preferably, the addition amount of the impregnating solution in the three soakings is 0.64-0.96 g/cm2。
9. The processing method according to any one of claims 1 to 8, wherein the thicknesses of the indium solders in the target and the back plate after the three wettings are respectively 1 to 2 mm.
10. The treatment method according to any one of claims 1 to 9, characterized in that it comprises the following steps:
(1) primary infiltration: respectively soaking the target and the back plate for 20-30 min once under the ultrasonic treatment with the power of 300-500W, wherein the soaking liquid is indium solder, and the adding amount is 0.32-0.48 g/cm2The temperature is 200-240 ℃;
(2) and (3) secondary infiltration: respectively carrying out secondary infiltration on the target and the back plate after the primary infiltration at the temperature of 200-240 ℃ for 4-5 hours, wherein the infiltration liquid is indium solder, and the addition amount is 0.64-0.96 g/cm2；
(3) And (3) three-time infiltration: the interval time between the secondary infiltration and the third infiltration is 20-28 h, the target and the back plate after the secondary infiltration are respectively cooled to room temperature in the interval time, the temperature is raised at the rate of 130-240 ℃/h, and the target and the back plate after the secondary infiltration are respectively heated at the final temperature of 200-240 DEG CSoaking for 5-15 min for three times, wherein the soaking liquid is indium solder, and the adding amount is 0.64-0.96 g/cm2。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110002835.0A CN112846560B (en) | 2021-01-04 | 2021-01-04 | Processing method for target material assembly before welding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110002835.0A CN112846560B (en) | 2021-01-04 | 2021-01-04 | Processing method for target material assembly before welding |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112846560A true CN112846560A (en) | 2021-05-28 |
| CN112846560B CN112846560B (en) | 2022-12-02 |
Family
ID=76001535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110002835.0A Active CN112846560B (en) | 2021-01-04 | 2021-01-04 | Processing method for target material assembly before welding |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112846560B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07331426A (en) * | 1994-06-10 | 1995-12-19 | Hitachi Ltd | Method for joining sputtering target material |
| CN104419907A (en) * | 2013-09-11 | 2015-03-18 | 宁波江丰电子材料股份有限公司 | Target material component and formation method thereof |
| CN105618886A (en) * | 2014-10-28 | 2016-06-01 | 宁波江丰电子材料股份有限公司 | Manufacturing method for target material assembly |
| CN106378507A (en) * | 2015-07-30 | 2017-02-08 | 宁波江丰电子材料股份有限公司 | Method for welding tungsten-titanium target material assembly |
| CN106695109A (en) * | 2015-08-06 | 2017-05-24 | 宁波江丰电子材料股份有限公司 | Method for manufacturing nickel-chromium target material component |
| CN107570826A (en) * | 2016-07-05 | 2018-01-12 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
| CN107570905A (en) * | 2016-07-05 | 2018-01-12 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
| CN111468799A (en) * | 2020-04-22 | 2020-07-31 | 宁波江丰电子材料股份有限公司 | Welding method of ceramic rotary target |
| JP2020164958A (en) * | 2019-03-29 | 2020-10-08 | Ｊｘ金属株式会社 | Sputtering target, manufacturing method of sputtering target, manufacturing method of sputtered film, and manufacturing method of solar cell |
-
2021
- 2021-01-04 CN CN202110002835.0A patent/CN112846560B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07331426A (en) * | 1994-06-10 | 1995-12-19 | Hitachi Ltd | Method for joining sputtering target material |
| CN104419907A (en) * | 2013-09-11 | 2015-03-18 | 宁波江丰电子材料股份有限公司 | Target material component and formation method thereof |
| CN105618886A (en) * | 2014-10-28 | 2016-06-01 | 宁波江丰电子材料股份有限公司 | Manufacturing method for target material assembly |
| CN106378507A (en) * | 2015-07-30 | 2017-02-08 | 宁波江丰电子材料股份有限公司 | Method for welding tungsten-titanium target material assembly |
| CN106695109A (en) * | 2015-08-06 | 2017-05-24 | 宁波江丰电子材料股份有限公司 | Method for manufacturing nickel-chromium target material component |
| CN107570826A (en) * | 2016-07-05 | 2018-01-12 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
| CN107570905A (en) * | 2016-07-05 | 2018-01-12 | 宁波江丰电子材料股份有限公司 | The manufacture method of target material assembly |
| JP2020164958A (en) * | 2019-03-29 | 2020-10-08 | Ｊｘ金属株式会社 | Sputtering target, manufacturing method of sputtering target, manufacturing method of sputtered film, and manufacturing method of solar cell |
| CN111468799A (en) * | 2020-04-22 | 2020-07-31 | 宁波江丰电子材料股份有限公司 | Welding method of ceramic rotary target |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112846560B (en) | 2022-12-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106112167B (en) | A kind of diffusion in vacuum soldering processes of molybdenum-copper and nickel base superalloy | |
| CN104588810B (en) | The welding method of aluminium target material assembly | |
| CN107010849B (en) | Laser welding process method for molybdenum group glass and kovar alloy | |
| CN106216835B (en) | A kind of laser lap connection method of Mo Re alloys foil | |
| CN102489813A (en) | Vacuum active brazing process of molybdenum-copper alloys and stainless steel | |
| CN104148759A (en) | Vacuum brazing method | |
| CN106270876B (en) | A kind of aluminium lithium alloy and titanium alloy electron beam melt pricker welding method | |
| CN111515515B (en) | Vacuum diffusion welding connection method for molybdenum-based high-temperature alloy honeycomb structure | |
| CN110977074B (en) | Furnace brazing method of nickel-based high-temperature alloy material | |
| CN111195768B (en) | Welding method of C-SiC sputtering target material | |
| CN112846560B (en) | Processing method for target material assembly before welding | |
| CN101992331B (en) | Vacuum brazing process for super-Ni laminated material and Cr18-Ni8 stainless steel | |
| CN104400196B (en) | Magnadure welding method | |
| CN110923643A (en) | Binding method of planar target material | |
| CN103878470A (en) | Tungsten electrode argon arc welding process of dissimilar materials of titanium alloy and nickel alloy | |
| CN105965176A (en) | Ni-based rapidly-cooled brazing material and brazing process for brazing tungsten-copper alloy and stainless steel | |
| CN107570905A (en) | The manufacture method of target material assembly | |
| CN110900037B (en) | Brazing filler metal and method for welding molybdenum-rhenium alloy and steel | |
| CN104191085A (en) | Low-temperature diffusion bonding method for adding quasi-crystal interlayers to aluminum-steel-aluminum | |
| CN113828924A (en) | K438 high-temperature alloy welding method | |
| CN105014171A (en) | Quick connection method for tungsten/copper in electron beam braze welding manner | |
| CN105537748A (en) | Solid-state jointing method for hollow type 1Cr11Ni2W2MoV steel pieces | |
| CN112775512A (en) | Stainless steel honeycomb heat exchanger and vacuum brazing method thereof | |
| CN110039159A (en) | The welding method of steel plate | |
| CN107043269A (en) | A kind of method that ceramic low-temp rapid welding is modified |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |