CN112838080A - Flip LED light-emitting device and manufacturing method thereof - Google Patents
Flip LED light-emitting device and manufacturing method thereof Download PDFInfo
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- CN112838080A CN112838080A CN202011639823.0A CN202011639823A CN112838080A CN 112838080 A CN112838080 A CN 112838080A CN 202011639823 A CN202011639823 A CN 202011639823A CN 112838080 A CN112838080 A CN 112838080A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 7
- 239000002184 metal Substances 0.000 claims abstract description 98
- 229910052751 metal Inorganic materials 0.000 claims abstract description 98
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000000741 silica gel Substances 0.000 claims abstract description 21
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 21
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000005476 soldering Methods 0.000 claims abstract description 9
- 239000003292 glue Substances 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000007704 transition Effects 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims 2
- 229910000679 solder Inorganic materials 0.000 claims 1
- 241000218202 Coptis Species 0.000 abstract description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 abstract description 2
- 239000007787 solid Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
An inverted LED light-emitting device and a manufacturing method thereof comprise a plastic structure, a metal piece, an inverted LED chip and a Zener diode; the plastic structure comprises a plastic bracket and a dam enclosing ring; the metal piece comprises a first metal piece and a second metal piece; the first metal piece and the second metal piece are connected with the plastic support, and the dam is arranged on the upper end faces of the first metal piece and the second metal piece in a surrounding manner; the box dam circle includes box dam circle inner zone and box dam circle outside region, flip-chip LED chip set up in box dam circle inner zone and with first metalwork, second metalwork are connected. The chip is welded in the support through soldering tin, the chip is not connected with the support through gold threads, the reliability of the device is better, the dam ring is arranged in the plastic support, the inner part of the bowl cup of the plastic support is divided into an inner part and an outer part, the LED flip chip is placed in the dam ring, and high-reflection silica gel is filled outside the dam ring, so that the luminous efficiency is improved; and because of the existence of the dam ring, the risk that the LED chips are reversely mounted and covered by high-reflection silica gel is avoided, and the high brightness of the device is ensured.
Description
Technical Field
The invention belongs to the technical field of LEDs, and particularly relates to an inverted LED light-emitting device and a manufacturing method thereof.
Background
The existing light-emitting device comprises a plastic bowl cup, a metal piece, an LED chip, a Zener diode and a wire. The LED chip is fixed on the metal piece and is connected with the metal piece through a wire to form a passage; the Zener diode is fixed on the metal piece and is reversely connected with two ends of the LED chip in parallel so as to carry out electrostatic protection on the LED chip. However, this method still has the following disadvantages:
1. the positive and negative electrodes of the LED chip are LED out through the wires, and the metal wire is easy to fall off or break when the LED chip is heated or cooled in the use process, so that the condition that the LED light-emitting device is in a dead state is caused.
2. Because the surface of the metal layer is usually required to be silvered in order to enhance the luminous intensity of the LED, the light reflection is enhanced, and the silver layer is easy to oxidize and vulcanize in air, so that the light-emitting device has the characteristics of poor conductivity and low luminous efficiency.
Disclosure of Invention
In order to overcome the above disadvantages of the prior art, the present invention provides a flip-chip LED light emitting device, which aims to solve the problems of poor conductivity and low light emitting efficiency of the existing light emitting device.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
an inverted LED light-emitting device comprises a plastic structure, a metal piece, an inverted LED chip and a Zener diode;
the plastic structure comprises a plastic support and a dam enclosing ring;
the metal piece comprises a first metal piece and a second metal piece;
the first metal piece and the second metal piece are connected with the plastic support and are arranged in a separated mode, and the dam is arranged on the upper end faces of the first metal piece and the second metal piece in a surrounding mode;
the dam ring comprises a dam ring inner area and a dam ring outer area, and the inverted LED chip is arranged in the dam ring inner area and connected with the first metal piece and the second metal piece;
the Zener diode is arranged on the first metal piece, the second metal piece is provided with a wire, and the wire is connected with the Zener diode.
Preferably, the first metal piece is provided with an anode solid crystal region at the position of the inner area of the dam ring, the second metal piece is provided with a cathode solid crystal region at the position of the inner area of the dam ring, and the anode and the cathode of the flip LED chip are respectively fixed on the anode solid crystal region and the cathode solid crystal region through soldering tin.
Preferably, the cross-sectional shape of the side edge of the dam enclosure is a stepped structure, the side edge of the dam enclosure comprises an inner part of the dam enclosure and an outer part of the dam enclosure, the thickness of the inner part of the dam enclosure is smaller than that of the outer part of the dam enclosure, and the inner part of the dam enclosure surrounds to form an inner area of the dam enclosure.
Preferably, be provided with zener on first metalwork and place the district, zener places the district and is located the box dam circle with between the plastic support, zener place the district with plastic support handing-over department is circular arc transition structure, zener diode set up in zener places the district.
Preferably, the first metal piece and the second metal piece are provided with two pairs of grooves, the notch of the groove of the first metal piece is opposite to the notch of the groove of the second metal piece, the groove is filled with the insulating piece, and the dam ring is matched with the grooves.
Preferably, the first metal piece and the second metal piece are provided with through holes, filling pieces are filled in the through holes, and the upper surfaces of the filling pieces are connected with the dam ring.
Preferably, the area of the inner area of the dam ring is larger than that of the flip LED chip, and the contact surface of the flip LED chip and the inner part of the dam ring is overlapped.
Preferably, the plastic support with fill high reflection silica gel between the box dam circle, zener diode by high reflection silica gel covers.
Preferably, the plastic support is provided with a negative pole identification area, and the negative pole identification area is provided with an identification bulge.
The invention also comprises a manufacturing method of the flip LED luminescent device, which comprises the following steps:
fixedly connecting the first metal piece and the second metal piece with the plastic piece bracket respectively, wherein the dam ring, the insulating piece and the filling piece are filled between the first metal piece and the second metal piece and at the through holes of the first metal piece and the second metal piece;
the positive electrode and the negative electrode of the flip LED chip are respectively and fixedly connected with the positive electrode die bonding area and the negative electrode die bonding area through the soldering tin;
fixing a Zener diode in the Zener placing area and carrying out routing;
filling high-reflection silica gel between the plastic support and the dam enclosing ring, wherein the Zener diode is covered by the high-reflection silica gel;
and injecting fluorescent glue into the plastic support and heating and curing.
Compared with the prior art, the scheme of the invention has the following specific beneficial effects:
the LED flip chip is adopted and welded in the bracket through soldering tin, the chip is not connected with a gold thread, the reliability of the device is better, a dam ring is arranged in the plastic bracket, the inner part of the bowl cup of the plastic bracket is divided into an inner part and an outer part, the LED flip chip is arranged in the dam ring, and high-reflection silica gel is filled outside the dam ring, so that the luminous efficiency is improved; and because of the existence of the dam ring, the risk that the LED chips are reversely mounted and covered by high-reflection silica gel is avoided, and the high brightness of the device is ensured.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a structural view of a flip-chip LED light-emitting device of an embodiment of the present invention;
fig. 2 is a structural view of a flip LED light emitting device of an embodiment of the present invention with the flip LED chip removed;
FIG. 3 is a schematic view of a metal part of an embodiment of the invention;
FIG. 4 is a schematic cross-sectional view of a flip-chip LED light emitting device of an embodiment of the present invention with the highly reflective silica gel and the phosphor layer removed;
FIG. 5 is a schematic cross-sectional view of a flip-chip LED light emitting device of an embodiment of the present invention;
description of reference numerals:
10-negative pole identification area, 101-identification protrusion, 11-plastic support, 12-dam ring, 121-dam ring outer part, 122-dam ring inner part, 13-filling part, 14-insulating part, 21-first metal part, 22-second metal part, 211-positive pole die bonding area, 221-negative pole die bonding area, 3-flip LED chip, 31-soldering tin, 4-Zener diode, 5-lead, 6-through hole, 71-first groove, 72-second groove, 8-high reflection silica gel and 9-fluorescent layer.
Detailed Description
So that the manner in which the above recited objects, features and advantages of the present invention can be understood in detail, a more particular description of the invention, briefly summarized above, may be had by reference to the embodiments thereof which are illustrated in the appended drawings. It should be noted that the embodiments of the present invention and features of the embodiments may be combined with each other without conflict. In the following description, numerous specific details are set forth to provide a thorough understanding of the present invention, and the described embodiments are merely a subset of the embodiments of the present invention, rather than a complete embodiment. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
As shown in fig. 1 to 5, the present embodiment includes a flip-chip LED light emitting device, which includes a plastic structure, a metal member, a flip-chip LED chip 3, and a zener diode 4;
the plastic structure comprises a plastic support 11 and a dam enclosing ring 12;
the metal pieces include a first metal piece 21 and a second metal piece 22;
the first metal piece 21 and the second metal piece 22 are connected with the plastic support 11, the first metal piece 21 and the second metal piece 22 are arranged in a separated mode, and the dam ring 12 is arranged on the upper end faces of the first metal piece 21 and the second metal piece 22;
the dam enclosure 12 comprises an inner area of the dam enclosure 12 and an outer area of the dam enclosure 12, a positive electrode die bonding area 211 is arranged at the position of the first metal piece 21, which is located in the inner area of the dam enclosure 12, and a negative electrode die bonding area 221 is arranged at the position of the second metal piece 22, which is located in the inner area of the dam enclosure 12;
the flip-chip LED chip 3 is arranged in the inner area of the dam ring 12, and the anode and the cathode of the flip-chip LED chip 3 are respectively fixed on the anode solid crystal area 211 and the cathode solid crystal area 221 through soldering tin 31;
a Zener placing area is arranged on the first metal piece 21, the end face of the Zener placing area is of a convex cambered surface structure, the Zener placing area is located between the dam enclosing ring 12 and the plastic support 11, the Zener diode 4 is arranged in the Zener placing area, the second metal piece 22 is provided with a lead 5, and the lead 5 is connected with the Zener diode 4;
Compared with the prior art, the scheme of the invention has the following specific beneficial effects:
1. the LED chip 3 is inverted, the chip is welded in the bracket through the soldering tin 31, the chip is connected without gold wires, and the reliability of the whole light-emitting device is better;
2. a dam ring 12 is arranged in the plastic support 11, the inner part of the bowl cup of the plastic support 11 is divided into an inner part and an outer part, the inverted LED chip 3 is placed in the dam ring 12, and the high-reflection silica gel 8 is filled outside the dam ring 12, so that the light emitting efficiency is improved; due to the existence of the dam ring 12, the risk that the high-reflection silica gel 8 covers the flip LED chip 3 is avoided, and the high brightness of the device is ensured;
3. after the high-reflection silica gel 8 is filled, a protective layer is formed, and the metal piece is prevented from being oxidized and vulcanized;
4. be provided with zener and place the district, zener place the district with plastic support handing-over department is circular arc transition structure, is favorable to zener diode 4's solid brilliant and the operation of preface routing, and zener diode 4 places the district and is located between dam circle 12 and plastic support 11, can be covered by high reflection silica gel 8 to avoided zener diode 4 to the absorption of focusing, high reflection silica gel 8 covers zener diode 4 and partial metalwork, improved the reflectivity of light, promoted the luminous efficacy of device.
Specifically, the side cross-sectional shape of the dam ring 12 is a stepped structure, the side of the dam ring 12 includes a dam ring inner part 122 and a dam ring outer part 121, the thickness of the dam ring inner part 122 is smaller than that of the dam ring outer part 121, and the dam ring inner part 122 surrounds to form the inner region of the dam ring 12. The structure of the dam ring 12 helps the flip-chip LED to be stably placed in the dam ring 12, and the position deviation of the flip-chip LED chip 3 is reduced.
Specifically, referring to fig. 3, two pairs of grooves, namely a first groove 71 and a second groove 72, are formed in the first metal part 21 and the second metal part 22, the notch of the groove of the first metal part 21 is opposite to the notch of the groove of the second metal part 22, the insulating part 14 is filled in the groove, and the dam ring 12 is matched with the grooves. The first metal piece 21 and the second metal piece 22 are provided with through holes 6, filling pieces 13 are filled in the through holes 6, and the upper surfaces of the filling pieces 13 are connected with the dam enclosing ring 12. The provision of the grooves and through holes 6 facilitates the formation of a full dam ring 12 during injection molding/die-top of the stent; meanwhile, the combination of the plastic support 11 and the metal piece can be enhanced due to the through holes 6, and the strength of the whole support is improved.
Specifically, the area of the inner region of the dam ring 12 is larger than the area of the flip LED chip 3, and the contact surface of the flip LED chip 3 and the inner part 122 of the dam ring are overlapped.
Specifically, a cathode identification area 10 is arranged on the plastic support at a position close to the cathode die bond area, and the cathode identification area 10 is provided with an identification protrusion 101. The negative pole identification area and the protruding structure of sign that set up can make things convenient for the better discernment negative pole region of operating personnel, play and prevent slow-witted effect.
The invention also comprises a manufacturing method of the flip LED luminescent device, which comprises the following steps:
fixedly connecting the first metal piece 21 and the second metal piece 22 with the plastic piece bracket respectively, wherein the dam ring 12, the insulating piece 14 and the filling piece 13 are filled between the first metal piece 21 and the second metal piece 22 and at the through holes 6 of the first metal piece 21 and the second metal piece 22;
the positive electrode and the negative electrode of the flip LED chip 3 are respectively and fixedly connected with the positive electrode die bonding area 211 and the negative electrode die bonding area 221 through the soldering tin 31;
fixing the Zener diode 4 in the Zener placing area and carrying out routing;
filling high-reflection silica gel 8 between the plastic support 11 and the dam enclosing ring 12, wherein the Zener diode 4 is covered by the high-reflection silica gel 8;
and injecting fluorescent glue into the plastic support 11 and heating and curing to form the fluorescent layer 9.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, so that any modification, equivalent change and modification made to the above embodiment according to the technical spirit of the present invention are within the scope of the technical solution of the present invention.
Claims (10)
1. An inverted LED light-emitting device is characterized by comprising a plastic structure, a metal piece, an inverted LED chip and a Zener diode;
the plastic structure comprises a plastic support and a dam enclosing ring;
the metal piece comprises a first metal piece and a second metal piece;
the first metal piece and the second metal piece are connected with the plastic support and are arranged in a separated mode, and the dam is arranged on the upper end faces of the first metal piece and the second metal piece in a surrounding mode;
the dam ring comprises a dam ring inner area and a dam ring outer area, and the inverted LED chip is arranged in the dam ring inner area and connected with the first metal piece and the second metal piece;
the Zener diode is arranged on the first metal piece, the second metal piece is provided with a wire, and the wire is connected with the Zener diode.
2. The flip-chip LED light emitting device of claim 1, wherein the first metal piece and the second metal piece are respectively provided with an anode die bonding region and a cathode die bonding region, and the anode and the cathode of the flip-chip LED chip are respectively fixed to the anode die bonding region and the cathode die bonding region by solder.
3. The flip-chip LED light emitting device of claim 1, wherein the cross-sectional shape of the side edge of the dam ring is a stepped structure, the side edge of the dam ring comprises a dam ring inner part and a dam ring outer part, the dam ring inner part has a thickness smaller than that of the dam ring outer part, and the dam ring inner part surrounds the dam ring inner region.
4. The flip-chip LED light emitting device of claim 1, wherein a zener diode is disposed on the first metal member, the zener diode is disposed between the dam and the plastic support, an arc transition structure is disposed at a junction of the zener diode and the plastic support, and the zener diode is disposed in the zener diode.
5. The flip-chip LED light emitting device of claim 1, wherein two pairs of grooves are formed on the first metal piece and the second metal piece, the notches of the grooves of the first metal piece are opposite to the notches of the grooves of the second metal piece, the grooves are filled with insulating members, and the dam rings are matched with the grooves.
6. The flip-chip LED light emitting device of claim 1, wherein the first metal piece and the second metal piece are provided with through holes, the through holes are filled with filling members, and an upper surface of the filling members is connected to the dam ring.
7. The flip-chip LED light emitting device of claim 3, wherein the area of the inner region of the dam ring is larger than the area of the flip-chip LED chip, and the flip-chip LED chip overlaps the contact surface of the inner portion of the dam ring.
8. The flip-chip LED light emitting device of claims 1-7, wherein a highly reflective silicone is filled between the plastic support and the dam ring, and the zener diode is covered by the highly reflective silicone.
9. The flip-chip LED light emitting device of claims 1-7, wherein the plastic frame has a negative identification region, and the negative identification region has an identification protrusion.
10. A method of fabricating a flip-chip LED light emitting device as claimed in any one of claims 1 to 9, comprising the steps of:
fixedly connecting the first metal piece and the second metal piece with the plastic piece bracket respectively, wherein the dam ring, the insulating piece and the filling piece are filled between the first metal piece and the second metal piece and at the through holes of the first metal piece and the second metal piece;
the positive electrode and the negative electrode of the flip LED chip are respectively and fixedly connected with the positive electrode die bonding area and the negative electrode die bonding area through the soldering tin;
fixing a Zener diode in the Zener placing area and carrying out routing;
filling high-reflection silica gel between the plastic support and the dam enclosing ring, wherein the Zener diode is covered by the high-reflection silica gel;
and injecting fluorescent glue into the plastic support and heating and curing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011639823.0A CN112838080A (en) | 2020-12-31 | 2020-12-31 | Flip LED light-emitting device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011639823.0A CN112838080A (en) | 2020-12-31 | 2020-12-31 | Flip LED light-emitting device and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112838080A true CN112838080A (en) | 2021-05-25 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011639823.0A Pending CN112838080A (en) | 2020-12-31 | 2020-12-31 | Flip LED light-emitting device and manufacturing method thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN112838080A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114242870A (en) * | 2021-12-22 | 2022-03-25 | 鸿利智汇集团股份有限公司 | Wafer support, wafer support plate and wafer packaging method |
| CN114447178A (en) * | 2021-12-30 | 2022-05-06 | 广东晶科电子股份有限公司 | LED support |
-
2020
- 2020-12-31 CN CN202011639823.0A patent/CN112838080A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114242870A (en) * | 2021-12-22 | 2022-03-25 | 鸿利智汇集团股份有限公司 | Wafer support, wafer support plate and wafer packaging method |
| CN114447178A (en) * | 2021-12-30 | 2022-05-06 | 广东晶科电子股份有限公司 | LED support |
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