CN116979009A

CN116979009A - LED luminous device

Info

Publication number: CN116979009A
Application number: CN202310927935.3A
Authority: CN
Inventors: 饶海林; 李飞鸿; 李警皇
Original assignee: Langminas Optoelectronic Xiamen Co ltd
Current assignee: Langminas Optoelectronic Xiamen Co ltd
Priority date: 2023-07-26
Filing date: 2023-07-26
Publication date: 2023-10-31

Abstract

The application provides an LED light-emitting device, which comprises a substrate, an LED light-emitting unit and a packaging layer, wherein the LED light-emitting unit is arranged on the substrate and is electrically connected with an external electrode through the substrate to emit light, the packaging layer coats the LED light-emitting unit, and monochromatic light emitted by the LED light-emitting unit is subjected to wavelength conversion and finally emitted in a mixed white light mode. The substrate comprises a reflecting layer, the reflecting layer comprises a first reflecting layer and a second reflecting layer which are sequentially laminated, and the second reflecting layer has higher light reflectivity and larger thickness relative to the first reflecting layer by controlling the light reflectivity and the thickness of the second reflecting layer and the first reflecting layer so as to achieve the effect of further improving the light emitting efficiency of the LED light emitting device.

Description

LED luminous device

Technical Field

The application relates to the technical field of semiconductors, in particular to an LED light-emitting device.

Background

With the development of technology, light emitting diodes (hereinafter referred to as LEDs) are very commonly used light source products, and the luminous efficiency and brightness of LEDs have been developed to ideal levels, so that energy saving advantages are achieved compared with conventional light sources, and various manufacturers are driven to continuously improve and develop the LED in the directions of efficiency, service life and the like.

The existing LED light-emitting device is characterized in that an array formed by a plurality of LED chips is welded and fixed on a prefabricated base in a eutectic reflow soldering mode, and then the array is packaged together with a light conversion material, so that a light-emitting device capable of being used for illumination or display is formed. However, the conventional submount generally includes a substrate, an insulating layer, a circuit layer and a solder mask (white oil layer), in which the solder mask is used as a reflective layer, and when the LED chip array and the submount are soldered by a eutectic solder, the reflectivity of the solder mask to visible light is reduced, which further reduces the luminous efficiency of the LED light emitting device. When the LED chip array and the base are subjected to eutectic reflow soldering by using the solder paste, the thermal resistance of the solder paste formed during the eutectic reflow soldering is obviously larger than that of the gold-tin eutectic at the same thickness, so that the thermal conductivity of the LED light-emitting device is affected.

Therefore, how to provide an LED light emitting device, which can further improve the light emitting efficiency of the LED light emitting device on the basis of the prior art without affecting the heat conducting property thereof, has become an important point of further study by those skilled in the art.

Disclosure of Invention

The application aims to provide an LED light-emitting device, which can further improve the light-emitting efficiency of the LED light-emitting device on the basis of the prior art.

In a first aspect, an embodiment of the present application provides an LED lighting device, including:

the substrate comprises a base, a circuit layer and a reflecting layer, wherein the reflecting layer is positioned on the circuit layer and exposes part of the surface of the circuit layer;

the LED light-emitting unit is arranged on the circuit layer and comprises a plurality of LED chips, and the LED light-emitting unit is electrically connected with a part of the exposed surface of the circuit layer;

the packaging layer is arranged on the substrate and coats the LED light-emitting unit;

the reflective layer comprises a first reflective layer and a second reflective layer which are sequentially stacked, the first reflective layer is in contact with the circuit layer, and the thickness of the second reflective layer is larger than that of the first reflective layer.

Compared with the prior art, the application has the following beneficial effects:

the application provides an LED light-emitting device, which comprises a substrate, an LED light-emitting unit and a packaging layer. The LED light-emitting unit is arranged on the substrate and electrically connected with the external electrode through the substrate to emit light, and the packaging layer coats the LED light-emitting unit, wherein the substrate comprises a reflecting layer and a circuit layer, and the reflecting layer comprises a first reflecting layer and a second reflecting layer which are sequentially laminated. According to the LED light-emitting device, the first reflecting layer is in direct contact with the circuit layer, and the thicknesses of the second reflecting layer and the first reflecting layer are controlled, so that the second reflecting layer has a larger thickness relative to the first reflecting layer, and the effect of further improving the light-emitting efficiency of the LED light-emitting device is achieved.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the embodiments will be briefly described below, it being understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and other related drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 is a schematic plan view of an LED lighting device according to an embodiment of the present application;

FIG. 2 is a schematic cross-sectional view of the LED lighting device taken along line A-A in accordance with FIG. 1;

fig. 3 to 11 are schematic views showing a plane and a cross-sectional structure of an LED lighting device according to various embodiments of the present application.

Illustration of:

a 100 substrate; 110 a substrate; 120 insulating layers; 130 a circuit layer; 131 a first electrode region; 1311 electrode group; 132 a second electrode region; 1321 a positive electrode pad; 1322 negative electrode pad; 140 a reflective layer; 141 a first reflective layer; 142 a second reflective layer; 200LED light emitting units; 210LED chips; 300 packaging layers; a 310 wavelength conversion section; 320 light transmitting portions; 330 and Zhou Cewei stops; 400 solder paste.

Detailed Description

The following specific examples are presented to illustrate the present application, and those skilled in the art will readily appreciate the additional advantages and capabilities of the present application as disclosed herein. The application may be practiced or carried out in other embodiments that depart from the spirit and scope of the present application, and details of the present application may be modified or changed from various points of view and applications.

In the description of the present application, it should be noted that, unless explicitly stated and limited otherwise, the term "connected" should be interpreted broadly, and for example, it may be a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances. Furthermore, the terms "first" and "second," etc. are used merely to distinguish between descriptions and should not be construed as indicating or implying relative importance.

According to one aspect of the present application, an LED lighting device is provided. Referring to fig. 1 and 2, the LED lighting device includes a substrate 100, an LED lighting unit 200, and an encapsulation layer 300. The LED light emitting unit 200 is disposed on the substrate 100, and the encapsulation layer 300 encapsulates the LED light emitting unit 200, encapsulates the LED light emitting unit 200 on the substrate 100, and defines a light emitting area of the LED light emitting device, wherein the LED light emitting unit 200 is composed of a plurality of LED light emitting chips.

The substrate 100 includes a base 110, an insulating layer 120, a circuit layer 130 and a reflective layer 140 sequentially stacked from bottom to top, where the circuit layer 130 provides a conductive path for realizing electrical connection between the LED light emitting unit 200 and an external electrode, and the reflective layer 140 is used for reflecting light emitted by the LED light emitting unit 200, so as to improve the light emitting efficiency of the LED light emitting device.

In one embodiment, the substrate 110 is used as a supporting member of the LED lighting device, on which other components are disposed, and is required to have high heat conductivity, to satisfy conventional machining such as drilling, punching, cutting, and the like, and good reflectivity, so as to prevent the light beam emitted from the LED lighting unit 200 from passing through the substrate 110. The substrate 110 may be elongated or circular in shape, or may be irregular in shape. The substrate 110 may be a metal substrate or an insulating substrate. In one embodiment, the metal substrate may be an aluminum plate or a copper plate, wherein the copper plate is used as the metal substrate to provide higher heat conductivity for the LED lighting device. In another embodiment, the plate of the insulating substrate may be a sapphire substrate, a ceramic substrate or a glass substrate, which is resistant to high temperature, wherein the ceramic substrate is preferably an aluminum nitride ceramic substrate.

Preferably, the thickness of the substrate 110 ranges from 600 μm to 800 μm, and preferably, the thickness is 700 μm, so as to secure the heat diffusion capability of the substrate 110 and the stability of the encapsulation process.

In one embodiment, the insulating layer 120 is formed on the upper surface of the base 110 as one of core materials of the substrate 100, and is generally made of a specific material. For example, in an embodiment, the insulating layer 120 is made of a polymer material, where the polymer material includes an epoxy resin or a silicone compound, so that the insulating layer 120 has small thermal resistance, high elasticity, strong adhesion, and excellent thermal aging resistance, mechanical stress, and thermal stress resistance, and especially when the LED light emitting unit 200 and the substrate 100 are eutectic-welded, the insulating layer 120 made of a specific material may not generate significant thermal deformation under a high-temperature environment generated during the eutectic welding process, and may not generate rapid cold shrinkage due to temperature reduction after the eutectic welding is finished, so that the insulating layer 120 and the substrate 110 or the circuit layer 130 may be separated. That is, the insulating layer 120 also needs excellent structural stability.

Preferably, the thickness of the insulating layer 120 ranges from 50 μm to 300 μm, so that the insulating layer 120 is prevented from being instantaneously broken down by the on-voltage when the LED chip 210 array is powered on, and thus the LED light emitting device is abnormal in short circuit.

In one embodiment, referring to fig. 3 and 4, the circuit layer 130 may be formed on the insulating layer 120 by spraying, printing, molding, or the like, and is typically made of a metal material having low thermal resistance. The circuit layer 130 is not only used for carrying the LED lighting unit 200, but also provides a conductive path for the LED lighting unit 200 to electrically connect by being directly connected with the LED lighting unit 200. In an embodiment, the circuit layer 130 may be formed of a single metal layer or a metal alloy layer such as copper, silver, gold or platinum, and may have a single-layer structure or a multi-layer structure. In one embodiment, the circuit layer 130 is a block-shaped structure formed on the insulating layer 120.

Referring to fig. 5 to 8, the reflective layer 140 may be formed on the circuit layer 130 by spraying, printing, or molding. In one embodiment, the reflective layer 140 is an insulating reflective layer, and the main body thereof is typically made of a silica gel material or a resin material, which can be combined with the surface of the circuit layer 130 to achieve a good heat conduction effect. The main body further includes optical scattering particles, so that the reflectivity of the incident light beam can be increased after the light beam emitted from the LED light emitting unit 200 is incident on the reflective layer 140, thereby improving the light emitting efficiency of the LED light emitting device. In one embodiment, the resin material may be, for example, dipropylene glycol monomethyl ether, acrylic acid ester, diethylene glycol monoethyl ether acetate, aromatic carbonyl compounds, amine compounds, epoxy resins, or combinations of one or more of silica gel, and the optical scattering particles may be, for example, one or more of titanium dioxide, boron nitride, silica, barium sulfate, talc, or aluminum oxide.

In an embodiment, the reflective layer 140 covers the insulating layer and extends to cover the circuit layer 130, and a first electrode area 131 and a second electrode area 132 are formed on the upper surface of the circuit layer 130 and are spaced from each other, where the first electrode area 131 includes a plurality of electrode groups 1311, each electrode group 1311 includes at least two electrodes, namely, a positive electrode and a negative electrode, and each LED chip 210 corresponds to each electrode group 1311 one by one and is located on the electrode group 1311, so that an electrical connection can be formed between each LED chip 210 and each electrode group 1311, and thus the light beam can be electrically excited to be generated.

In an embodiment, the second electrode region 132 includes two electrode regions spaced apart from each other, a positive electrode pad 1321 and a negative electrode pad 1322, so that the LED lighting device can be electrically connected to an external electrode through the second electrode region 132. The positive electrode pads 1321 of the second electrode regions 132 are electrically connected to the positive electrode of each electrode group 1311, respectively, the negative electrode pads 1322 of the second electrode regions 132 are electrically connected to the negative electrode of each electrode group 1311, respectively, and the electrode groups 1311 may be connected in series, in parallel, or in a combination of series and parallel.

In an embodiment, the first electrode region 131 is disposed at a position near the center of the substrate 100, corresponding to the disposed position of the LED light emitting unit 200, and the second electrode region 132 is disposed at a peripheral side of the first electrode region 131.

In an embodiment, the positive electrode pad 1321 and the negative electrode pad 1322 are respectively disposed at two opposite ends of the substrate 110, and the two are spaced apart from each other, and the first electrode region 131 is located between the positive electrode pad 1321 and the negative electrode pad 1322, so as to avoid the risk of short-circuiting the positive electrode pad 1321 and the negative electrode pad 1322 due to too close distance when the second electrode region 132 is electrically connected to the external electrode.

It should be noted that, the arrangement positions and arrangement manners of the first electrode region 131 and the second electrode region 132 according to the present application are merely illustrative, and should not be considered as specific limitation of the present application, and the specific arrangement manners of the first electrode region 131, the second electrode region 132 and the LED light emitting unit 200 may be flexibly set according to the actual product structure or dimension specification of the LED light emitting device.

The reflective layer 140 includes a first reflective layer 141 and a second reflective layer 142 that are stacked, and the second reflective layer 142 is formed on the first reflective layer 141 and entirely covers an upper surface of the first reflective layer 141, that is, a vertical projection of the first reflective layer 141 is located within a vertical projection plane of the second reflective layer 142. By providing the reflective layer 140 as a double-layer structure composed of the first reflective layer 141 and the second reflective layer 142, the purpose of improving the light reflection efficiency of the reflective layer 140 can be achieved to improve the light emission efficiency of the LED light emitting unit 200, and by providing the first reflective layer 141 and the second reflective layer 142 as the same constituent material, the bonding strength of the contact surface between the first reflective layer 141 and the second reflective layer 142 can be improved.

Wherein, the first reflective layer 141 is formed on the insulating layer 120 in a pattern complementary to the pattern of the circuit layer 130, and collectively covers the surface of the insulating layer 120. That is, the vertical projection of the first reflective layer 141 is complementary to the vertical projection of the circuit layer 130 and does not overlap, so that the first reflective layer 141 can cover the surface of the insulating layer 120 while avoiding the circuit layer 130. The second reflective layer 142 is formed on the first reflective layer 141, completely covers the first reflective layer 141, and extends to cover the upper surface of the circuit layer 130, so that the surface height of the second reflective layer 141 is higher than the surface height of the circuit layer 130, and only a portion of the upper surface of the circuit layer 130 (i.e., the first electrode region 131 and the second electrode region 132) is exposed, so as to define a mounting region of the LED chip 210 on the circuit layer 130, and a conductive path is reserved for electrical connection between the LED chip 210 and the first electrode region.

In the conventional LED light emitting device manufacturing process, a high temperature environment (for example, a flip chip process of the LED chip 210) is unavoidable, and the high temperature environment can cause yellowing or degradation of the reflective layer 140 (the main body is a silica gel material or a resin material), which results in a decrease in the light reflectivity of the reflective layer 140, thereby affecting the light extraction efficiency of the LED device. In order to prevent the reflective layer 140 from significantly decreasing the light reflection efficiency in a high temperature environment, the effect of further improving the light reflection efficiency of the reflective layer 140 may be achieved by changing the concentration of the optical scattering particles in the first and second reflective layers 141 and 142 and by changing the thicknesses of the first and second reflective layers 141 and 142 in the vertical direction.

In one implementation, the mass concentration of the optically scattering particles in the first reflective layer 141 and the second reflective layer 142 are different, and the mass concentration of the optically scattering particles in the second reflective layer 142 is higher than the mass concentration of the optically scattering particles in the first reflective layer 141. For example, the mass concentration of the optically scattering particles in the first reflective layer 141 ranges from 20% to 30%, and the mass concentration in the second reflective layer 142 ranges from 40% to 50%. In an embodiment, the thickness of the second reflective layer 142 in the vertical direction is greater than that of the first reflective layer 141 to further improve the light reflection efficiency of the reflective layer 140. For example, the thickness range of the first reflective layer 141 is set to be between 10 μm and 20 μm, and the thickness range of the second reflective layer 142 on the first reflective layer 141 is set to be between 25 μm and 35 μm. In a specific embodiment, the first reflective layer 141 and the second reflective layer 142 are formed on the circuit layer 130 by a screen printing method, wherein the first reflective layer 141 has a vertical thickness of 15 μm and a light reflectivity of 88%,% and the second reflective layer 142 has a vertical thickness of 30 μm and a light reflectivity of 93% on the first radiation portion, that is, by setting the thickness of the second reflective layer 142 and the mass concentration of the optical scattering particles to be significantly higher than the first reflective layer 141 and making the light reflectivity of the second reflective layer be greater than the light reflectivity of the first reflective layer, the reflective layer 140 can still maintain a higher light reflection efficiency under a high temperature environment, thereby improving the light emitting efficiency of the LED light emitting device.

Preferably, the second reflective layer 142 is formed by screen printing twice, each printing having a thickness of 15 μm. The main material of the conventional reflective layer 140 is epoxy resin, and after the epoxy resin is formed at a predetermined position on the circuit layer 130 by a screen printing method, a curing step by baking is required to form the reflective layer 140 with stable light reflectivity. In the process of forming the second reflective layer 142, the light reflection efficiency of the epoxy resin (and the internal optical scattering particles thereof) before and after baking and curing is kept stable by adopting a two-screen printing formation method.

Referring to fig. 9 and 10, the LED light emitting unit 200 is composed of a plurality of LED chips 210 spaced apart from each other, and the plurality of LED chips 210 are commonly combined with each other in series, parallel, or series-parallel fashion to form an LED chip 210 array. Each LED chip 210 includes opposite upper and lower surfaces and a plurality of sidewall surfaces between the upper and lower surfaces, and pads of the LED chip 210 are disposed at one side of the lower surface. By flip-chip connecting the bonding pad of each LED chip 210 with the first electrode region 141 of the substrate 100, the electrical connection of the LED light emitting unit 200 can be achieved, so that the LED chips 210 are electrically excited to generate light beams. In one embodiment, the bonding pads of the LED chip 210 are eutectic-connected with the first electrode regions by solder paste 400. The package layer 300 is disposed on the substrate 100 and covers the array of LED chips 210 to define a light emitting area of the LED light emitting device and further improve the light emitting efficiency of the LED light emitting device, the top surface of the package layer 300 is the light emitting surface of the LED light emitting device, and the top surface of the package layer 300 is located above the upper surface of the LED chips 210.

In one embodiment, referring to fig. 1 and 2, the encapsulation layer 300 may include a wavelength conversion part 310, and the wavelength conversion part 310 directly covers the LED light emitting unit 200. In an embodiment, the wavelength converting region 310 may include a light transmissive material and a wavelength converting material, and entirely cover the upper surface and the sidewall surface of each LED chip 210. The light-permeable material can be one or more of polyphthalamide, polycyclohexane dimethanol terephthalate, epoxy resin or silica gel, and the wavelength conversion material can be any one or two of fluorescent powder and quantum dots. In another embodiment, the wavelength converting region 310 may also be a preformed fluorescent film or a fluorescent sheet, where the fluorescent film covers only the upper surface of the LED chip 210, but not the sidewall surface of the LED chip 210, relative to the manner in which the light-permeable material and the wavelength converting material are used.

The LED chip 210 can emit a monochromatic light beam (hereinafter, referred to as a first light beam) having a predetermined wavelength range, and after the first light beam is incident into the wavelength conversion part 310, the wavelength conversion material mixed in the wavelength conversion part 310 is excited to change the wavelength, and converted into a second light beam and/or a third light beam. In one embodiment, the first light beam is blue light, and after entering the wavelength conversion portion 310, a part of the first light beam is converted into a green second light beam (i.e. green light) and a red third light beam (i.e. red light), the green light beam and the red light beam are combined to form yellow light, while another part of the first light beam maintains the original wavelength, and the blue light beam is emitted from the wavelength conversion portion 310, and the combined yellow light beam and blue light beam are mixed, so that the LED light emitting unit 200 finally emits as a mixed white light beam.

In another embodiment, referring to fig. 11, the encapsulation layer 300 may further include a light transmitting portion 320, and the wavelength converting portion 310 is replaced with the light transmitting portion 320. Wherein the light-transmitting portion 320 does not substantially affect the wavelength of the first light beam. The transparent portion 320 may be made of a transparent material, such as one or more of polyphthalamide, polycyclohexane dimethanol terephthalate, epoxy, or silica gel. That is, the wavelength of the first light beam emitted from the LED chip is not converted by the encapsulation layer 300 during the process of passing through the encapsulation layer 300 (the light transmitting portion 320), so the LED light emitting device of this structure can be applied to a lighting apparatus that provides various monochromatic light sources such as red light, green light, blue light, infrared light, or ultraviolet light.

Further, referring to fig. 1 and 2, the packaging layer 300 further includes a Zhou Cewei blocking portion 330, the peripheral blocking portion 330 is disposed on the reflective layer 140 and surrounds the periphery of the LED lighting unit 200, and the wavelength converting portion 310 (the light transmitting portion 320 in other embodiments) is disposed within a range surrounded by the Zhou Cewei blocking portion 330 to encapsulate the LED lighting unit 200. Since the lower surface of the LED chip 210 is connected to the substrate 100 by flip-chip, the first light beam emitted from the LED chip 210 is emitted outwards from the upper surface and the sidewall on the periphery thereof. The bottom of the LED light emitting unit 200 is further provided with the reflective layer 140, and the reflective layer 140 is combined with the Zhou Cewei blocking portion 330, so that an optical reflective cavity can be formed at the bottom and the periphery of the LED light emitting unit 200, and further the first light beam scattered outwards from the side wall of the LED chip 210 is blocked and reflected, so as to effectively guide the outgoing light beam of the LED light emitting unit 200 to exit along the light outgoing surface located on the top surface of the package layer 300, and further increase the light outgoing efficiency of the LED light emitting device.

In summary, the present application provides an LED lighting device, which includes a substrate 100, an LED lighting unit 200 and an encapsulation layer 300. The LED light emitting unit 200 is disposed on the substrate 100, and emits light by being electrically connected to an external electrode through the substrate 100, and the encapsulation layer 300 encapsulates the LED light emitting unit 200. The substrate 100 includes a reflective layer 140, where the reflective layer 140 includes a first reflective layer 141 and a second reflective layer 142 that are sequentially stacked, and the present application further improves the light emitting efficiency of the LED light emitting device by controlling the light reflectivity and thickness of the second reflective layer 142 and the first reflective layer 141, so that the second reflective layer 142 has a higher light reflectivity and a larger thickness than the first reflective layer 141.

The foregoing is merely a preferred embodiment of the present application, and it should be noted that modifications and substitutions can be made by those skilled in the art without departing from the technical principles of the present application, and these modifications and substitutions should also be considered as being within the scope of the present application.

Claims

1. An LED lighting device, comprising:

2. The LED lighting device of claim 1, wherein the first reflective layer has a thickness less than the circuit layer and the second reflective layer has a surface height greater than the circuit layer surface height.

3. The LED lighting device of claim 1, wherein the vertical projection of the first reflective layer is within the vertical projection plane of the second reflective layer.

4. The LED lighting device of claim 1, wherein the reflective layer is an insulating reflective layer.

5. The LED lighting device of claim 1, wherein the reflective layer comprises a host material comprising optically scattering particles or a resin material.

6. The LED lighting device of claim 5, wherein the optically scattering particles comprise one or more of titanium dioxide, boron nitride, silicon dioxide, barium sulfate, talc, or aluminum oxide.

7. The LED lighting device of claim 5, wherein the resin material comprises one or more of dipropylene glycol monomethyl ether, acrylate, diethylene glycol monoethyl ether acetate, aromatic carbonyl compounds, amine compounds, epoxy, or silicone.

8. The LED lighting device of any one of claims 5 to 7, wherein the optically scattering particles have a lower mass concentration in the first reflective layer than in the second reflective layer.

9. The LED lighting device of any one of claims 5-7, wherein the mass concentration of the optically scattering particles in the first reflective layer is in the range of 20% to 30%, and the mass concentration of the optically scattering particles in the second reflective layer is in the range of 40% to 50%.

10. The LED lighting device of claim 1, wherein the first reflective layer has a thickness in the range of 10 μm to 20 μm and the second reflective layer has a thickness in the range of 25 μm to 35 μm on the first reflective layer.

11. The LED lighting device of claim 1, wherein the circuit layer comprises a first electrode region and a second electrode region, the LED lighting unit being connected to the first electrode region and being electrically connected to an external electrode through the second electrode region.

12. The LED lighting device of claim 11, wherein the first electrode region comprises a plurality of spaced apart electrode sets, each electrode set comprising two electrodes, a positive electrode and a negative electrode.

13. The LED lighting device of claim 11, wherein the second electrode region comprises two electrodes, a positive electrode pad and a negative electrode pad, the first electrode region being located between the positive electrode pad and the negative electrode pad.

14. The LED lighting device of claim 11, wherein the vertical projection of the first reflective layer is complementary to and non-overlapping with the vertical projection of the circuit layer.

15. The LED lighting device of claim 1, wherein the substrate further comprises an insulating layer between the base and the circuit layer.

16. The LED lighting device of claim 1, wherein the encapsulation layer comprises a wavelength conversion portion that covers the LED lighting unit.

17. The LED lighting device of claim 16, wherein the wavelength converting region covers the upper surface and the sidewall surface of the LED chip and is formed of a combination of a light transmissive material and a wavelength converting material.

18. The LED lighting device of claim 17, wherein the wavelength conversion material comprises any one or a combination of two of a phosphor or a quantum dot.

19. The LED lighting device of any one of claims 16-18, wherein the encapsulation layer further comprises a Zhou Cewei dam, the Zhou Cewei dam being located on the reflective layer, the wavelength converting region being defined within the surrounding range of the Zhou Cewei dam.

20. The LED lighting device of claim 1, wherein the encapsulation layer comprises a light transmissive portion that covers the upper surface and the sidewall surfaces of the LED chip and is comprised of a light transmissive material.