CN112824560A - Sample stage and method for preparing thin-film material - Google Patents
Sample stage and method for preparing thin-film material Download PDFInfo
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- CN112824560A CN112824560A CN201911138095.2A CN201911138095A CN112824560A CN 112824560 A CN112824560 A CN 112824560A CN 201911138095 A CN201911138095 A CN 201911138095A CN 112824560 A CN112824560 A CN 112824560A
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- 239000000463 material Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 23
- 239000010409 thin film Substances 0.000 title claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 107
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 107
- 239000010703 silicon Substances 0.000 claims abstract description 107
- 238000000231 atomic layer deposition Methods 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 12
- 239000002243 precursor Substances 0.000 claims description 10
- 239000012159 carrier gas Substances 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- 229910002804 graphite Inorganic materials 0.000 claims description 3
- 239000010439 graphite Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 238000012544 monitoring process Methods 0.000 abstract description 14
- 230000000694 effects Effects 0.000 abstract description 11
- 206010063659 Aversion Diseases 0.000 abstract description 4
- 230000033001 locomotion Effects 0.000 abstract description 4
- 230000009471 action Effects 0.000 abstract description 3
- 235000012431 wafers Nutrition 0.000 description 65
- 238000011065 in-situ storage Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 239000007770 graphite material Substances 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
The invention discloses a sample stage and a method for preparing a film material, which comprises a body; the first silicon wafer is a round silicon wafer with a first size and is arranged on the upper surface of the body; the second silicon wafer is arranged below the first silicon wafer and is a round silicon wafer with a second size, wherein the second silicon wafer and the first silicon wafer belong to a nested structure, and rectangular holes are formed in the periphery of an arc of the second silicon wafer respectively; spacing, spacing passes the body with the rectangular hole phase-match has solved and has lacked effectual normal position real-time supervision means among the prior art, and the sample is difficult to fix with the motion of cooperation equipment, leads to the sample to have the technical problem of aversion possibility, has reached the sample platform and has been applicable to the sample of multiple size, plays good spacing and fixed action to the sample of equidimension not, and the sample can go up and down and rotate along with equipment, realizes the technological effect of the normal position monitoring function of equipment.
Description
Technical Field
The invention relates to the technical field of semiconductor materials, in particular to a sample table and a method for preparing a thin film material.
Background
At present, the Atomic Layer Deposition technology is widely applied to the fields of micro-nano electronics, nano materials and the like, and the Atomic Layer Deposition (ALD) process grows a thin film by means of alternately repeated self-limiting reactions, and can accurately control the thickness and chemical components of the thin film, so that the deposited thin film has few impurities, high quality and good uniformity and conformality.
The existing atomic layer deposition technology is not perfect for the processes of a plurality of materials, mainly because an effective in-situ real-time monitoring means is lacked, a sample is difficult to fix to match with the movement of equipment; the atomic layer deposition process can be effectively improved by designing a proper sample stage to match with the motion of an instrument to realize the in-situ monitoring function.
However, the applicant has found that the prior art has at least the following technical problems:
the prior art lacks effective normal position real-time monitoring means, and the sample is difficult to fix in order to cooperate the equipment motion, leads to the sample to have the technical problem of aversion possibility.
Disclosure of Invention
The embodiment of the invention provides a sample table and a method for preparing a film material, which are used for solving the technical problem that the sample has displacement possibility due to the fact that an effective in-situ real-time monitoring means is lacked and the sample is difficult to fix to match with equipment to move in the prior art, so that the sample table is suitable for samples of various sizes, has good limiting and fixing effects on the samples of different sizes, and can lift and rotate along with the equipment to realize the technical effect of the in-situ monitoring function of the equipment.
In order to solve the above problems, in a first aspect, the present invention provides a sample stage for preparing a thin film material, the sample stage comprising: a body; the first silicon wafer is a round silicon wafer with a first size and is arranged on the upper surface of the body; the second silicon wafer is arranged below the first silicon wafer and is a round silicon wafer with a second size, wherein the second silicon wafer and the first silicon wafer belong to a nested structure, and rectangular holes are formed in the periphery of an arc of the second silicon wafer respectively; and the limiting strip penetrates through the body and is matched with the rectangular hole.
Preferably, the first silicon wafer and the second silicon wafer are gradually recessed and distributed in a step shape.
Preferably, the side of the body has a rectangular notch, wherein the size of the rectangular notch is larger than that of the sample.
Preferably, the first dimension is greater than the second dimension.
Preferably, the size of the rectangular hole is 10mm × 10 mm.
Preferably, the body and the limiting strip are made of any one of stainless steel, aluminum and graphite.
Preferably, the body is directly contacted with a heating plate in the vacuum cavity, and the body can lift and rotate along with the heating plate.
Preferably, the number of the limiting strips is the same as that of the rectangular holes, and one or M limiting strips can be arranged, wherein M is a positive integer.
In a second aspect, embodiments of the present invention provide a method for preparing a thin film material, the method comprising: placing a sample with a first size or a second size on a first silicon chip or a second silicon chip of a body, and selecting a limiting strip according to the size of the sample to fix the sample; flatly placing the body on a heating plate, keeping the body in a horizontal state, and recording the original position of the body; and introducing a precursor source and a carrier gas into the vacuum cavity, and carrying out atomic layer deposition on the precursor source and the sample to obtain a film sample.
One or more technical solutions in the embodiments of the present invention at least have one or more of the following technical effects:
the embodiment of the invention provides a sample stage and a method for preparing a film material, which comprises a body; the first silicon wafer is a round silicon wafer with a first size and is arranged on the upper surface of the body; the second silicon wafer is arranged below the first silicon wafer and is a round silicon wafer with a second size, wherein the second silicon wafer and the first silicon wafer belong to a nested structure, and rectangular holes are formed in the periphery of an arc of the second silicon wafer respectively; and the limiting strip penetrates through the body and is matched with the rectangular hole. Through with first silicon chip, the second silicon chip is nested the setting in proper order, and first silicon chip is greater than the size of second silicon chip, be convenient for be applicable to the sample of multiple size, the circular arc of second silicon chip has the rectangular hole all around, penetrate spacing in the rectangular hole, can play good spacing and fixed action to the sample of unidimensional not, the normal position monitoring function of equipment can be realized, reach the sample simultaneously and can go up and down and rotatory technological effect along with equipment, solve and lack effectual normal position real-time supervision means among the prior art, the sample is difficult to fix and moves with the cooperation equipment, lead to the sample to have the technical problem of aversion possibility.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
FIG. 1 is a schematic structural diagram of a sample stage for preparing a thin film material according to an embodiment of the present invention;
FIG. 2 is a top view of a sample stage for preparing a thin film material according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a method of preparing a thin film material according to an embodiment of the present invention.
Description of reference numerals: the silicon chip comprises a body 1, a first silicon chip 2, a second silicon chip 3, a limiting strip 4 and a rectangular notch 5.
Detailed Description
The embodiment of the invention provides a sample stage and a method for preparing a film material, and solves the technical problems that in the prior art, an effective in-situ real-time monitoring means is lacked, and a sample is difficult to fix to match with equipment to move, so that the sample has displacement possibility.
The technical method in the embodiment of the invention has the following general structure: a body; the first silicon wafer is a round silicon wafer with a first size and is arranged on the upper surface of the body; the second silicon wafer is arranged below the first silicon wafer and is a round silicon wafer with a second size, wherein the second silicon wafer and the first silicon wafer belong to a nested structure, and rectangular holes are formed in the periphery of an arc of the second silicon wafer respectively; the limiting strip penetrates through the body and the rectangular hole is matched, the sample platform is suitable for samples of various sizes, good limiting and fixing effects are achieved on the samples of different sizes, the samples can lift and rotate along with the equipment, and the technical effect of the in-situ monitoring function of the equipment is achieved.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example one
An embodiment of the present invention provides a sample stage for preparing a thin film material, please refer to fig. 1 and fig. 2, the sample stage includes:
a body 1; the first silicon wafer 2 is a circular silicon wafer with a first size, and the first silicon wafer 2 is arranged on the upper surface of the body 1; the second silicon wafer 3 is arranged below the first silicon wafer 2, the second silicon wafer 3 is a round silicon wafer with a second size, the second silicon wafer 3 and the first silicon wafer 2 belong to a nested structure, and rectangular holes are formed in the peripheries of arcs of the second silicon wafer 4 respectively.
Further, the side of the body 1 has a rectangular notch 6, wherein the size of the rectangular notch 6 is larger than that of the sample. Further, the first silicon wafer 2 and the second silicon wafer 3 are gradually recessed and distributed in a step shape. Further, the first size is larger than the second size. Further, the size of the rectangular hole is 10mm × 10 mm. Further, body 1 directly contacts with the heating plate in the vacuum cavity, just body 1 can follow the heating plate goes up and down, rotates.
Specifically, the sample stage for preparing the thin film material in the embodiment of the present application includes: the silicon chip comprises a body 1, a first silicon chip 2, a second silicon chip 3, a limiting strip 4 and the like. First silicon chip is the echelonment with the second and distributes for nested structure, has a rectangular hole respectively around the second silicon chip, can install spacing in the rectangular hole, all has the spacing effect to not unidimensional sample, simultaneously, the body can link together with the heating plate, can cooperate normal position monitoring facilities to rotate and go up and down at atomic layer deposition in-process, obtains the surface information of sample, analysis film growth quality. The upper surface of the body 1 is provided with a first silicon wafer 2, and the first silicon wafer 2 is a circular silicon wafer with a first size, such as four inches. The second silicon wafer 3 is arranged below the first silicon wafer 2, and the second silicon wafer 3 is a circular silicon wafer with a second size, for example, the second size is two inches. The order of the dimensions of the two silicon wafers is: the first dimension is greater than the second dimension. The first silicon wafer 2 and the second silicon wafer 3 belong to a nested structure, and the two silicon wafers are gradually sunken and distributed in a step shape. The second silicon wafer 3 has rectangular holes around the circular arc, and the size of the rectangular holes is 10mm × 10mm, but the size of the rectangular holes is not limited to 10mm × 10mm, and the size of the rectangular holes can be set according to the size of the sample. The side of the body 1 is provided with a rectangular notch 6, wherein the size of the rectangular notch 6 is larger than that of a sample, and the sample can be transferred by matching equipment under the condition of not breaking vacuum. The body 1 directly contacts with a heating plate in a vacuum cavity, so that the body 1 can be matched with in-situ monitoring equipment to rotate and lift, surface information of a sample is obtained, the growth quality of a film is analyzed, an atomic layer deposition process can be effectively carried out, and the atomic layer deposition process can be substantially improved.
And the limiting strip 5 penetrates through the body 1 and is matched with the rectangular hole.
Further, the number of the limiting strips 5 is the same as that of the rectangular holes, and one or M limiting strips 5 can be arranged, wherein M is a positive integer. Further, the body 1 and the limit strip 5 are made of any one of stainless steel, aluminum or graphite.
Specifically, the limiting strip 5 is installed in the rectangular hole, and the limiting strip 5 penetrates through the body 1 to limit the size of the sample. The number of the limiting strips 5 is the same as that of the rectangular holes, the number of the limiting strips 5 can be changed according to actual requirements, and one or more limiting strips 5 can be arranged. For example, four limit strips 5 are installed in four rectangular holes arranged around the arc of the second silicon wafer 4. The limiting strip is an independent part, the material is replaceable, the requirement is consistent with that of the body 1, the body 1 and the limiting strip 5 are made of any one of stainless steel, aluminum and graphite materials, but not limited to any one of the stainless steel, the aluminum and the graphite materials, and the requirement is that the material of the body 1 and the limiting strip 5 has good heat conductivity and does not react with deposited samples. Meanwhile, the material used by the body 1 is required to have enough weight, the stability of the sample can be still kept after the precursor source and the carrier gas are introduced, the limiting and fixing effects on the sample are achieved, the effective in-situ real-time monitoring means on the film is realized, and the film product with excellent quality is obtained.
Example two
An embodiment of the present invention provides a method for preparing a thin film material, please refer to fig. 3, which includes steps 110 to 130:
step 110: placing a sample with a first size or a second size on a first silicon chip or a second silicon chip of a body, and selecting a limiting strip according to the size of the sample to fix the sample;
step 120: flatly placing the body on a heating plate, keeping the body in a horizontal state, and recording the original position of the body;
step 130: and introducing a precursor source and a carrier gas into the vacuum cavity, and carrying out atomic layer deposition on the precursor source and the sample to obtain a film sample.
Specifically, the sample of the first size or the second size is placed on a first silicon wafer or a second silicon wafer of the body, for example, the first silicon wafer is a four-inch silicon wafer, and the second silicon wafer is a two-inch silicon wafer. Selecting a limiting strip according to the size of the sample to fix the sample, flatly placing the body with the sample on a heating plate of atomic layer deposition equipment, keeping the body in a horizontal state, and recording the original position of a sample table. And introducing a precursor source and a carrier gas into the vacuum cavity, wherein the precursor source and the carrier gas introduced into the cavity for reaction are processes needing to be improved. In the atomic layer deposition process, a sample can lift and rotate along with equipment, the precursor source and the sample are subjected to atomic layer deposition to obtain a film sample, and meanwhile, the body is matched with an instrument to realize an in-situ monitoring function and obtain surface information of the film in real time, so that the process is improved.
The technical scheme provided in the embodiment of the application at least has the following technical effects or advantages:
the sample stage and the method for preparing the film material provided by the embodiment of the invention pass through a body; the first silicon wafer is a round silicon wafer with a first size and is arranged on the upper surface of the body; the second silicon wafer is arranged below the first silicon wafer and is a round silicon wafer with a second size, wherein the second silicon wafer and the first silicon wafer belong to a nested structure, and rectangular holes are formed in the periphery of an arc of the second silicon wafer respectively; and the limiting strip penetrates through the body and is matched with the rectangular hole. Through with first silicon chip, the second silicon chip is nested the setting in proper order, and first silicon chip is greater than the size of second silicon chip, be convenient for be applicable to the sample of multiple size, the circular arc of second silicon chip has the rectangular hole all around, penetrate spacing in the rectangular hole, can play good spacing and fixed action to the sample of unidimensional not, the normal position monitoring function of equipment can be realized, reach the sample simultaneously and can go up and down and rotatory technological effect along with equipment, solve and lack effectual normal position real-time supervision means among the prior art, the sample is difficult to fix and moves with the cooperation equipment, lead to the sample to have the technical problem of aversion possibility.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various modifications and variations can be made in the embodiments of the present invention without departing from the spirit or scope of the embodiments of the invention. Thus, if such modifications and variations of the embodiments of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to encompass such modifications and variations.
Claims (9)
1. A sample stage for preparing a thin film material, the sample stage comprising:
a body;
the first silicon wafer is a round silicon wafer with a first size and is arranged on the upper surface of the body;
the second silicon wafer is arranged below the first silicon wafer and is a round silicon wafer with a second size, wherein the second silicon wafer and the first silicon wafer belong to a nested structure, and rectangular holes are formed in the periphery of an arc of the second silicon wafer respectively;
and the limiting strip penetrates through the body and is matched with the rectangular hole.
2. The sample stage of claim 1, wherein the first silicon wafer and the second silicon wafer are recessed step by step in a stepped configuration.
3. The sample stage of claim 1, wherein the side of the body has a rectangular notch, wherein the size of the rectangular notch is larger than the size of the sample.
4. The sample stage of claim 1, in which the first dimension is greater than the second dimension.
5. The sample stage of claim 1, wherein the rectangular aperture is 10mm x 10mm in size.
6. The sample stage of claim 1, wherein the body and the stop bar are made of any one of stainless steel, aluminum, or graphite.
7. The sample stage of claim 1, wherein the body is in direct contact with a heating plate within a vacuum chamber, and the body can be raised and lowered and rotated with the heating plate.
8. The sample stage as claimed in claim 1, wherein the number of the limiting strips is the same as the number of the rectangular holes, and the number of the limiting strips can be one or M, wherein M is a positive integer.
9. A method of making a film material, the method comprising:
placing a sample with a first size or a second size on a first silicon chip or a second silicon chip of a body, and selecting a limiting strip according to the size of the sample to fix the sample;
flatly placing the body on a heating plate, keeping the body in a horizontal state, and recording the original position of the body;
and introducing a precursor source and a carrier gas into the vacuum cavity, and carrying out atomic layer deposition on the precursor source and the sample to obtain a film sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911138095.2A CN112824560A (en) | 2019-11-20 | 2019-11-20 | Sample stage and method for preparing thin-film material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911138095.2A CN112824560A (en) | 2019-11-20 | 2019-11-20 | Sample stage and method for preparing thin-film material |
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| Publication Number | Publication Date |
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| CN112824560A true CN112824560A (en) | 2021-05-21 |
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| CN201911138095.2A Pending CN112824560A (en) | 2019-11-20 | 2019-11-20 | Sample stage and method for preparing thin-film material |
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| JP2001157939A (en) * | 1999-11-29 | 2001-06-12 | Nec Corp | Center referring placement table |
| JP2007067037A (en) * | 2005-08-30 | 2007-03-15 | Hitachi High-Technologies Corp | Vacuum processing device |
| CN201611653U (en) * | 2009-11-10 | 2010-10-20 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor wafer clamping device |
| CN201989054U (en) * | 2010-12-10 | 2011-09-28 | 北京有色金属研究总院 | Vehicle suitable for sand blasting of multi-size wafers |
| CN206210751U (en) * | 2016-11-30 | 2017-05-31 | 乐山新天源太阳能科技有限公司 | It is suitable for the cleaning device of different size single silicon chip |
| CN208323050U (en) * | 2018-04-30 | 2019-01-04 | 安徽万协智能科技集团有限公司 | A kind of anti-skidding claw on honing machine |
| CN109396883A (en) * | 2018-09-28 | 2019-03-01 | 济南铸信机械有限公司 | A kind of quick clamping device for vertical lathe |
| CN209328863U (en) * | 2019-01-24 | 2019-08-30 | 扬州美和光电科技有限公司 | It is a kind of to adapt to different die size quartz boats |
| CN209397260U (en) * | 2018-11-19 | 2019-09-17 | 河北普兴电子科技股份有限公司 | A kind of epitaxial furnace tray susceptor |
-
2019
- 2019-11-20 CN CN201911138095.2A patent/CN112824560A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001157939A (en) * | 1999-11-29 | 2001-06-12 | Nec Corp | Center referring placement table |
| JP2007067037A (en) * | 2005-08-30 | 2007-03-15 | Hitachi High-Technologies Corp | Vacuum processing device |
| CN201611653U (en) * | 2009-11-10 | 2010-10-20 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor wafer clamping device |
| CN201989054U (en) * | 2010-12-10 | 2011-09-28 | 北京有色金属研究总院 | Vehicle suitable for sand blasting of multi-size wafers |
| CN206210751U (en) * | 2016-11-30 | 2017-05-31 | 乐山新天源太阳能科技有限公司 | It is suitable for the cleaning device of different size single silicon chip |
| CN208323050U (en) * | 2018-04-30 | 2019-01-04 | 安徽万协智能科技集团有限公司 | A kind of anti-skidding claw on honing machine |
| CN109396883A (en) * | 2018-09-28 | 2019-03-01 | 济南铸信机械有限公司 | A kind of quick clamping device for vertical lathe |
| CN209397260U (en) * | 2018-11-19 | 2019-09-17 | 河北普兴电子科技股份有限公司 | A kind of epitaxial furnace tray susceptor |
| CN209328863U (en) * | 2019-01-24 | 2019-08-30 | 扬州美和光电科技有限公司 | It is a kind of to adapt to different die size quartz boats |
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