CN112820618A - Plasma diagnosis device and method for micro sputtering ion pump - Google Patents
Plasma diagnosis device and method for micro sputtering ion pump Download PDFInfo
- Publication number
- CN112820618A CN112820618A CN202011467195.2A CN202011467195A CN112820618A CN 112820618 A CN112820618 A CN 112820618A CN 202011467195 A CN202011467195 A CN 202011467195A CN 112820618 A CN112820618 A CN 112820618A
- Authority
- CN
- China
- Prior art keywords
- pump
- micro
- sputtering ion
- ion pump
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E30/00—Energy generation of nuclear origin
- Y02E30/10—Nuclear fusion reactors
Abstract
The invention discloses a plasma diagnosis device of a micro sputtering ion pump. According to the invention, the electron temperature and the electron number density of the internal space of the micro sputtering ion pump during normal operation are detected by arranging a closed space, introducing a Langmuir probe and adopting a fixed flow guide method. Meanwhile, the Langmuir probe moves up and down in the cavity of the accommodating pump by utilizing the matching among the motor, the lead screw, the slide block and the Langmuir probe, and the electronic temperature and the electronic number density at different positions in the interior of the measuring pump are further measured. In addition, the pressure regulation of the cavity of the accommodating pump and the inside of the test cover is realized by introducing the gas micro-flowmeter, and the electronic temperature and the electronic number density under different pressures are obtained.
Description
Technical Field
The invention relates to a plasma diagnosis device and a plasma diagnosis method for a micro sputtering ion pump, and belongs to the technical field of vacuum measurement front edges.
Background
With the development of science and technology, the application of the sputtering ion pump is more and more widely applied in the fields of aerospace products, electronic devices and scientific instruments, and the sputtering ion pump is developed towards the direction of miniaturization. Such as mass spectrometers, atomic clocks, and high-precision electrostatic levitation accelerometers, require a micro-sputter ion pump to provide high vacuum to maintain operation. This also places more stringent requirements on the design and study of micro-scale ion pumps. The difficulty of measurement is also increased due to the small structure of the micro sputtering ion pump.
The sputtering ion pump has the advantages of simple structure, easy operation and maintenance, no oil pollution, low power consumption in high vacuum and convenient installation. The structure of the miniature sputtering ion pump is that a single anode barrel is matched with a cathode plate, permanent magnets are placed at two ends of the anode barrel, high voltage is applied to the anode barrel during working, and plasma is formed by internal gas ionization during normal working.
Plasma diagnostic methods are classified into two major types, contact methods and non-contact methods. Contact methods, including langmuir probe methods, impedance measurements, etc., are commonly used to diagnose widely and uniformly distributed plasma parameters; non-contact methods include microwave transmission, spectroscopy, laser diagnostics, mass spectrometry, paramagnetic resonance, charge collector, Thomso scattering, etc., and are commonly used to provide accurate diagnosis of small-scale or non-uniform plasmas.
At present, a lot of research and pumping speed measurement work on the micro sputtering ion pump is carried out, but an accurate measurement result on the real distribution and change of the plasma inside the micro sputtering ion pump is not available, the difficulty of measurement is increased due to the small structure of the micro sputtering ion pump, and the measurement is helpful for the improvement of the structure and the performance of the micro sputtering ion pump. Therefore, it is necessary to design a device capable of accurately measuring the distribution and variation of the plasma inside the micro sputtering ion pump.
Disclosure of Invention
In view of the above, the present invention provides a plasma diagnostic apparatus and a plasma diagnostic method for a micro sputter ion pump. The electron current and the ion current in the inner space of the micro sputtering ion pump during normal operation can be detected through the Langmuir probe. The Langmuir probe can move up and down back and forth to measure the electron current and the ion current at different positions in the pump. And the pressure in the test cover is changed through the flowmeter, and the electronic current and the ionic current of the miniature sputtering ion pump under different working states are measured.
A micro sputter ion pump plasma diagnostic device, comprising: angle valve, molecular pump, mechanical pump, plasma diagnostor and holding pump cavity;
one end of the angle valve is connected with the molecular pump and the mechanical pump in sequence, and the other end of the angle valve is connected with the cavity for accommodating the pump; a magnetic suspension rotor meter and a first valve are arranged on the accommodating pump cavity; the first valve is connected with the gas micro-flowmeter through a gas supply pipeline; the accommodating pump cavity is fixed with the bottom of a flange cover in the plasma diagnostor;
the plasma diagnostor comprises a motor, an upper bracket, a sliding block, a polished rod, a bottom bracket, a flange cover and a Langmuir probe; the miniature sputtering ion pump is suspended in the cavity of the accommodating pump through the binding posts and is supplied with power; the bottom bracket is a cylindrical structure with a through hole at the axis, and part of the cylinder penetrates through the through hole arranged on the flange cover and is positioned in the cavity for accommodating the pump; the end surface of the bottom bracket, which is not positioned in the cylinder body in the cavity for accommodating the pump, extends outwards to form a platform; the polish rod is two L-shaped smooth cylindrical rods, the end part of the long edge of the polish rod is fixed with the platform of the bottom bracket, and the end part of the short edge of the polish rod is fixed with the motor positioned above the flange cover; the bottom of the motor is connected with a lead screw, and the lead screw is connected with the upper bracket through threads; the upper bracket is fixed with the sliding block, and the sliding block is clamped on the polish rod; one end of the corrugated pipe is connected with the sliding block, and the other end of the corrugated pipe is hermetically connected with the bottom bracket; one end of the Langmuir probe is fixed at the bottom of the slide block, and the other end of the Langmuir probe extends into a side gap of the micro sputtering ion pump through the corrugated pipe and a through hole of the bottom bracket.
Preferably, the test device further comprises a test cover, wherein the test cover is positioned between the angle valve and the pump containing cavity and is communicated with the angle valve and the pump containing cavity; and the magnetic suspension rotor meter, the first valve and the second valve on the accommodating pump cavity are arranged on the test cover.
Preferably, the test cover is further provided with a second valve, and the second valve is connected with the ionization vacuum gauge and is used for measuring the pressure in the test cover.
Preferably, a second valve is further arranged on the pump accommodating cavity and connected with the ionization vacuum gauge for measuring the pressure in the pump accommodating cavity.
Preferably, the Langmuir probe is made of tungsten wire, and the diameter of the front end of the probe is 0.175 mm.
Preferably, a gasket is welded on the bottom support, and the corrugated pipe is welded at the other end of the gasket.
The present invention also provides a diagnostic method using the above diagnostic apparatus,
firstly, a mechanical pump and a molecular pump are adopted to pump a cavity for accommodating the pump, baking is required before testing, and meanwhile, a power supply of a miniature sputtering ion pump is connected to degas the pump;
step two, after the baking is finished, closing the angle valve when the temperature is reduced to the room temperature, enabling the micro sputtering ion pump to work independently, and exhausting the flow conducting body of the containing pump cavity; after the micro sputtering ion pump works stably, measuring the pumping speed S of the micro sputtering ion pump by adopting a fixed flow guide method;
step three, according to
Obtaining the pumping speed S of the micro sputtering ion pump, wherein I is the current of the micro sputtering ion pump during working; p is the pressure of the pumped gas;
after the pressure is adjusted, switching on the Langmuir probe and the motor, enabling the motor to work, and adjusting the Langmuir probe to penetrate into one point of the inner space of the micro sputtering ion pump through the rotation of the lead screw;
collecting electron current and ion current of the inner space of the micro sputtering ion pump by using a Langmuir probe; obtaining a volt-ampere characteristic curve; calculating to obtain the electron temperature and the electron number density through a thin sheath layer theory or a Challede sheath layer theory; wherein, electron temperature:
in the formula Vp1、Vp2Is the space potential at voltages P1 and P2; i isp1、Ip2Is the ion current at voltages P1 and P2; kTeIs the electron temperature of the plasma, e is the electron charge, which is a known quantity;
electron number density:
in the formula ne0Is the electron number density; i ise0An electron current; a. thepIs the surface area of the probe.
Preferably, the Langmuir probe is moved up and down by adjusting a motor, and the electron temperature and the electron number density at different positions are obtained by the diagnosis method.
Preferably, the pumping speed S of the micro sputtering ion pump is changed by adjusting the gas micro-flow meter, so as to obtain the electron temperature and the electron number density under different pressures.
Has the advantages that:
1. according to the invention, the electron temperature and the electron number density of the internal space of the micro sputtering ion pump during normal operation are detected by arranging a closed space, introducing a Langmuir probe and adopting a fixed flow guide method. Meanwhile, the Langmuir probe moves up and down in the cavity of the accommodating pump by utilizing the matching among the motor, the lead screw, the slide block and the Langmuir probe, and the electronic temperature and the electronic number density at different positions in the interior of the measuring pump are further measured. In addition, the pressure regulation of the cavity of the accommodating pump and the inside of the test cover is realized by introducing the gas micro-flowmeter, and the electronic temperature and the electronic number density under different pressures are obtained.
2. In order to realize universality, the invention also introduces a test cover to avoid the situation of insufficient space caused by overlarge volume of the sputtering ion pump.
3. Because the metering range of the magnetic suspension rotor is limited, the ionization vacuum gauge is introduced, when the magnetic suspension rotor gauge exceeds the measuring range, the ionization vacuum gauge can be used for measuring the pressure in the test cover, and when the magnetic suspension rotor gauge is not used, the ionization vacuum gauge can be isolated through the second valve.
Drawings
FIG. 1 is a schematic structural diagram of a plasma diagnostic device with a micro sputtering ion pump according to the present invention.
FIG. 2a is a schematic view of the interior of the plasma diagnostic apparatus of the present invention connected to a test shield.
FIG. 2b is a schematic view of the interior of the plasma diagnostic apparatus of the present invention connected to an angle valve
Fig. 3 is a schematic structural diagram of a plasma diagnostic device adopting a common sputtering ion pump according to the present invention.
The device comprises an angle valve 1, a molecular pump 2, a mechanical pump 3, a plasma diagnotor 4, a pump accommodating cavity 5, a test cover 6, a gas micro-flowmeter 7, an air supply pipeline 8, a magnetic suspension rotor meter 9, a first valve 10, a second valve 11, an ionization vacuum meter 12, a motor 13, a lead screw 14, an upper support 15, a slide block 16, a corrugated pipe 17, a polished rod 18, a gasket 19, a bottom support 20, a wiring terminal 21, a flange cover 22, a Langmuir probe 23 and a micro sputtering ion pump 24.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings and examples.
The invention provides a plasma diagnosis device of a micro sputtering ion pump, which has the structure shown in figure 1: one end of the angle valve 1 is sequentially connected with the molecular pump 2 and the mechanical pump 3, the molecular pump 2 and the mechanical pump 3 form a side pumping system, and the side pumping system can pump the interior of the test cover to 10-7The bypass system can be isolated from the test hood 6 by the angle valve 1 under Pa pressure. The other end of the angle valve 1 is connected with a test cover 6The method is simple. The testing cover 6 is provided with a magnetic suspension rotor meter 9 for measuring the pressure in the testing cover 6, the testing cover 6 is also provided with a first valve 10 and a second valve 11, the first valve 10 is connected with a gas micro-flowmeter 7 through a gas supply pipeline 8 to form a gas supply system, the gas supply system supplies gas to the testing cover 6, the micro sputtering ion pump can be controlled to stably work under different pressures, and discharge measurement under different pressures is completed. The second valve 11 is connected to an ionization gauge 12 for measuring the pressure in the test enclosure. When the magnetic suspension rotor meter 9 is out of range, the ionization vacuum meter 12 can be used for measuring the pressure in the test cover, and when the ionization vacuum meter 12 is not used, the ionization vacuum meter 12 can be isolated through the second valve 11. Test cover 6 with hold pump cavity 5 UNICOM, it is fixed with plasma diagnotor 4 to hold pump cavity 5, wherein, plasma diagnotor 4's structure is as shown in fig. 2, is:
4 wiring posts 21 are uniformly distributed on the flange cover 22, and the wiring posts 21 play two roles, namely, the miniature sputtering ion pump is hung up, so that the miniature sputtering ion pump is hung in the accommodating pump cavity 5, and secondly, the wiring posts 21 are made of conductive metal materials, so that a power supply can be provided for the miniature sputtering ion pump, the voltage is between 3000 and 4000V, and the joint of the wiring posts 21 and the flange cover is subjected to insulation treatment. The bottom of the flange cover is hermetically connected with the accommodating pump cavity 5, and a micro sputtering ion pump 24 is suspended in the accommodating pump cavity 5. The bottom bracket 20 is a cylindrical structure with a through hole at the axis, part of the cylindrical structure passes through the through hole of the flange cover 22 and is positioned in the accommodating pump cavity 5, and meanwhile, the mounting position is required to ensure that the probe can extend into a gap at the side edge of the micro sputtering ion pump; the bottom support 20 is not positioned on the end surface of the cylinder in the accommodating pump cavity 5 and extends outwards to form a platform, the polish rod 18 is two L-shaped smooth cylindrical rods, the end parts of the long edges of the polish rod 18 are respectively fixed with the platform of the bottom support 20, the motor 13 is positioned right above the through hole of the flange cover and fixed at the end part of the short edge of the polish rod 18, the bottom of the motor 13 is connected with the lead screw 14, the lead screw 14 is in threaded connection with the upper support 15, the upper support 15 is fixed with the slider 16, the slider 16 is clamped on the polish rod 18, the slider 16 is connected with the bottom support 20 through the bellows 17 in a welding mode, the connection of the bellows 17 can realize the up-and-down free movement of the Langmuir probe 23, one end of the Langmuir probe 23 is fixed. The bottom bracket 20 is provided with a gasket 19 for sealing, and the lower end of the corrugated pipe 17 is welded on the gasket.
It should be noted that for general applicability, as shown in fig. 3, a test hood 6 is provided to ensure that the sputter ion pump can be used normally even if it is too large. However, if the micro sputtering ion pump adopted by the invention is used, because the structure of the sputtering ion pump is smaller, plasma diagnosis can be realized in the accommodating pump cavity 5, namely, the structure of the invention removes the test cover 6, the angle valve 1 is directly connected with the accommodating pump cavity 5, the accommodating pump cavity 5 is provided with the magnetic suspension rotor meter 9 for measuring the pressure in the accommodating pump cavity 5, the accommodating pump cavity 5 is also provided with the first valve 10 and the second valve 11, the first valve 10 is connected with the gas micro-flow meter 7 through the gas supply pipeline 8, a gas supply system is formed, the gas supply system supplies gas to the accommodating pump cavity 5, the stable work of the micro sputtering ion pump under different pressures can be controlled, and the discharge measurement under different pressures can be completed. The second valve 11 is connected to an ionization gauge 12 for measuring the pressure in the chamber 5 containing the pump.
Wherein the bellows is selected to have a size as small as possible and to ensure good gas tightness, and the working pressure of the device is maintained at 10-7And (5) upper and lower.
The Langmuir probe is made of tungsten wire, the diameter of the front end of the probe is 0.175 mm, and the Langmuir probe is small enough to conveniently penetrate into the cathode gap of the micro sputtering ion pump. The gap between the anode cylinder and the cathode plate of the micro sputtering ion pump is 2.3mm, and the size of the probe is completely suitable for moving in the gap, so that the measurement is convenient.
The miniature sputtering ion pump consists of a single air pumping unit, and the air pumping amount is about 0.3 liter.
Based on the device, the plasma diagnosis method using the device comprises the following steps:
step one, because the normal working pressure of the micro sputtering ion pump is lower than 10-3-10-5Pa, so a mechanical pump is needed to be connected with the molecular pump to carry out the measurement of the measuring cover 6 and the chamber 5 for accommodating the pumpAir is extracted, baking is needed before testing, and meanwhile, a power supply of the miniature sputtering ion pump is connected to degas the pump.
And step two, after the baking is finished, closing the angle valve 1 when the temperature is reduced to the room temperature, and enabling the micro sputtering ion pump to work alone to pump the measuring cover 6 and the pump cavity containing flow conducting body 5. After the micro sputtering ion pump works stably, the pumping speed S of the micro sputtering ion pump is measured by adopting a fixed flow guide method.
Step three, according to
Wherein S is the pumping speed of the micro sputtering ion pump; i is the current of the micro sputtering ion pump during operation; p is the pressure of the evacuated gas, and it can be seen from the formula that the current when the micro sputtering ion pump operates is directly related to the pressure of the evacuated gas. For this purpose, the pumping speed S of the micro sputtering ion pump is obtained by adjusting the gas micro flow meter 7 and adjusting the pressure P of the pumped gas.
And step four, after the pressure is adjusted, switching on the Langmuir probe and the motor, and adjusting the Langmuir probe to penetrate into one point of the inner space of the micro sputtering ion pump through the rotation of the lead screw when the motor works.
Collecting electron current and ion current in the inner space of the micro sputtering ion pump by a probe tungsten rod needle head during Langmuir probe measurement; and obtaining a voltammetry characteristic curve. The electron temperature and the electron number density can be calculated by a thin sheath layer theory or a Challede sheath layer theory. Temperature of electrons
In the formula VpIs a space potential; vp1、Vp2Is the space potential at voltages P1 and P2; i isp1、Ip2Is the ion current at voltages P1 and P2, and e is the electron charge, which is a known quantity.
Number density of electrons
In the formula ne0Is the electron number density; i ise0An electron current; a. thepIs the surface area of the probe.
By adjusting the motor 13, up and down movement of the langmuir probe 23 is achieved, and with the diagnostic method, electron temperature and electron number density at different positions are obtained.
The pumping speed S of the micro sputtering ion pump is changed by adjusting the gas micro-flow meter 7, and the electron temperature and the electron number density under different pressures are obtained.
In summary, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (9)
1. A plasma diagnostic device of a micro sputtering ion pump is characterized by comprising: the device comprises an angle valve (1), a molecular pump (2), a mechanical pump (3), a plasma diagnostor (4) and a pump accommodating cavity (5);
one end of the angle valve (1) is sequentially connected with the molecular pump (2) and the mechanical pump (3), and the other end of the angle valve (1) is connected with the accommodating pump cavity (5); a magnetic suspension rotor meter (9) and a first valve (10) are arranged on the accommodating pump cavity (5); the first valve (10) is connected with the gas micro-flowmeter (7) through a gas supply pipeline (8); the accommodating pump cavity (5) is fixed with the bottom of a flange cover (22) in the plasma diagnostor (4);
the plasma diagnostor (4) comprises a motor (13), an upper bracket (15), a slide block (16), a polished rod (18), a bottom bracket (20), a flange cover (22) and a Langmuir probe (23); the miniature sputtering ion pump is characterized in that a flange cover (22) is fixedly connected with a containing pump cavity (5) through bolts, a plurality of binding posts (21) are uniformly distributed on the flange cover (22), and a miniature sputtering ion pump (24) is suspended in the containing pump cavity (5) through the binding posts (21) and is supplied with power; the bottom support (20) is a cylindrical structure with a through hole at the axis, and part of the cylindrical structure passes through the through hole arranged on the flange cover (22) and is positioned in the pump accommodating cavity (5); the end surface of the bottom bracket (20) which is not positioned in the cylinder body in the pump accommodating cavity (5) extends outwards to form a platform; the polish rod (18) is two L-shaped smooth cylindrical rods, the end part of the long side of the polish rod (18) is fixed with the platform of the bottom bracket (20), and the end part of the short side is fixed with the motor (13) positioned above the flange cover (22); the bottom of the motor (13) is connected with a lead screw (14), and the lead screw (14) is connected with the upper bracket (15) through threads; the upper bracket (15) is fixed with the sliding block (16), and the sliding block (16) is clamped on the polish rod (18); one end of the corrugated pipe (17) is connected with the sliding block (16), and the other end of the corrugated pipe is hermetically connected with the bottom support (20); one end of the Langmuir probe (23) is fixed at the bottom of the slide block (16), and the other end thereof extends into a side gap of the micro sputtering ion pump (24) through a corrugated pipe (17) and a through hole of the bottom bracket (20).
2. The plasma diagnostic apparatus of a micro sputtering ion pump according to claim 1, further comprising a test shield (6), the test shield (6) being located between the angle valve (1) and the chamber housing the pump (5) and communicating with the angle valve (1) and the chamber housing the pump (5); the magnetic suspension rotor meter (9), the first valve (10) and the second valve (11) on the accommodating pump cavity (5) are all arranged on the test cover (6).
3. The plasma diagnostic apparatus of the micro sputtering ion pump according to claim 2, wherein a second valve (11) is further provided on the test enclosure (6), and the second valve (11) is connected to an ionization vacuum gauge (12) for measuring the pressure inside the test enclosure (6).
4. The plasma diagnostic apparatus of the micro sputtering ion pump according to claim 1, wherein a second valve (11) is further provided on the chamber (5) for accommodating the pump, and the second valve (11) is connected to an ionization vacuum gauge (12) for measuring the pressure inside the chamber (5) for accommodating the pump.
5. The apparatus according to claim 1, wherein the Langmuir probe is made of tungsten wire and has a tip diameter of 0.175 mm.
6. The plasma diagnostic apparatus of a micro sputter ion pump according to claim 1, characterized in that a gasket (19) is welded on the bottom bracket (20), and the bellows (17) is welded to the other end of the gasket (19).
7. A method for diagnosing a plasma diagnostic apparatus of a micro sputter ion pump according to any of claims 1 to 5,
firstly, a mechanical pump and a molecular pump are adopted to pump a cavity (5) for accommodating the pump, baking is required before testing, and meanwhile, a power supply of a miniature sputtering ion pump is connected to degas the pump;
step two, after the baking is finished, after the temperature is reduced to the room temperature, the angle valve (1) is closed, the micro sputtering ion pump works independently, and the flow guide body (5) of the containing pump cavity is pumped; after the micro sputtering ion pump works stably, measuring the pumping speed S of the micro sputtering ion pump by adopting a fixed flow guide method;
step three, according to
Obtaining the pumping speed S of the micro sputtering ion pump, wherein I is the current of the micro sputtering ion pump during working; p is the pressure of the pumped gas;
after the pressure is adjusted, the Langmuir probe (23) and the motor (13) are switched on, the motor (13) works, and the Langmuir probe (23) is adjusted to be deep to one point of the inner space of the micro sputtering ion pump (24) through the rotation of the lead screw (14);
collecting electron current and ion current of the inner space of the micro sputtering ion pump by using a Langmuir probe (23); obtaining a volt-ampere characteristic curve; calculating to obtain the electron temperature and the electron number density through a thin sheath layer theory or a Challede sheath layer theory; wherein, electron temperature:
in the formula Vp1、Vp2Is thatSpace potential at voltages P1 and P2; i isp1、Ip2Is the ion current at voltages P1 and P2; kTeIs the electron temperature of the plasma, e is the electron charge, which is a known quantity;
electron number density:
in the formula ne0Is the electron number density; i ise0An electron current; a. thepIs the surface area of the probe.
8. The diagnostic method as set forth in claim 7, characterized in that up and down movement of the Langmuir probe (23) is achieved by adjusting the motor (13), and the electron temperature and the electron number density at different positions are obtained by the diagnostic method.
9. The diagnostic method according to claim 7, wherein the electron temperature and the electron number density at different pressures are obtained by adjusting the gas micro-flow meter (7) to change the micro-sputter ion pump pumping speed S.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011467195.2A CN112820618B (en) | 2020-12-14 | 2020-12-14 | Plasma diagnosis device and method for micro sputtering ion pump |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011467195.2A CN112820618B (en) | 2020-12-14 | 2020-12-14 | Plasma diagnosis device and method for micro sputtering ion pump |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112820618A true CN112820618A (en) | 2021-05-18 |
| CN112820618B CN112820618B (en) | 2023-04-07 |
Family
ID=75853498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011467195.2A Active CN112820618B (en) | 2020-12-14 | 2020-12-14 | Plasma diagnosis device and method for micro sputtering ion pump |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112820618B (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003217897A (en) * | 2002-01-25 | 2003-07-31 | Iwasaki Electric Co Ltd | Plasma measuring device and method, and sensor probe |
| JP2004103264A (en) * | 2002-09-04 | 2004-04-02 | Tokyo Electron Ltd | Plasma monitoring method, plasma monitoring device and plasma treatment device |
| US20050034811A1 (en) * | 2003-08-14 | 2005-02-17 | Mahoney Leonard J. | Sensor array for measuring plasma characteristics in plasma processing enviroments |
| US20110001465A1 (en) * | 2009-07-03 | 2011-01-06 | Chung-Ming Liu | Plasma Measurement Device, Plasma System, and Method for Measuring Plasma Characteristics |
| EP2521158A1 (en) * | 2011-05-05 | 2012-11-07 | Imec | Plasma probe and method for plasma diagnostics |
| CN109104805A (en) * | 2018-07-25 | 2018-12-28 | 北京航空航天大学 | Langmuir probe, Langmuir probe diagnostic system and its diagnostic method |
| CN110520960A (en) * | 2017-03-31 | 2019-11-29 | 都柏林城市大学 | System and method for remote sense plasma |
-
2020
- 2020-12-14 CN CN202011467195.2A patent/CN112820618B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003217897A (en) * | 2002-01-25 | 2003-07-31 | Iwasaki Electric Co Ltd | Plasma measuring device and method, and sensor probe |
| JP2004103264A (en) * | 2002-09-04 | 2004-04-02 | Tokyo Electron Ltd | Plasma monitoring method, plasma monitoring device and plasma treatment device |
| US20050034811A1 (en) * | 2003-08-14 | 2005-02-17 | Mahoney Leonard J. | Sensor array for measuring plasma characteristics in plasma processing enviroments |
| US20110001465A1 (en) * | 2009-07-03 | 2011-01-06 | Chung-Ming Liu | Plasma Measurement Device, Plasma System, and Method for Measuring Plasma Characteristics |
| EP2521158A1 (en) * | 2011-05-05 | 2012-11-07 | Imec | Plasma probe and method for plasma diagnostics |
| CN110520960A (en) * | 2017-03-31 | 2019-11-29 | 都柏林城市大学 | System and method for remote sense plasma |
| CN109104805A (en) * | 2018-07-25 | 2018-12-28 | 北京航空航天大学 | Langmuir probe, Langmuir probe diagnostic system and its diagnostic method |
Non-Patent Citations (1)
| Title |
|---|
| 殷冀平等: "电子回旋共振波等离子体及其应用", 《真空科学与技术学报》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112820618B (en) | 2023-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7582885B2 (en) | Charged particle beam apparatus | |
| KR100833680B1 (en) | Etching processing apparatus and self-biased voltage measuring method and monitoring method for etching processing apparatus | |
| CN105092626B (en) | The measurement apparatus and method of secondary electron characterisitic parameter | |
| CN105067274A (en) | Electric propulsion spacecraft plume parameter acquisition method | |
| CN105022083B (en) | A kind of ion-conductance advances line double charge ions test device and assembly method thereof | |
| US11268870B2 (en) | High frequency response pressure sensor based on direct current glow discharge plasma principle | |
| JPH03504059A (en) | High resolution plasma mass spectrometer | |
| CN112820618B (en) | Plasma diagnosis device and method for micro sputtering ion pump | |
| CN108986611A (en) | A kind of space magnetic field joins phenomena simulation device again | |
| CN212723193U (en) | Torsen experiment platform for evaluating critical insulation strength of insulating gas | |
| CN113484402B (en) | Planar differential electromigration analyzer-mass spectrum combined system and analysis method | |
| CN105304455B (en) | A kind of vacuum arc ion source time of-flight mass spectrometer | |
| CN105158568B (en) | Semiconductor resistor rate surveying instrument and mapping method based on capacitor charge and discharge principle | |
| CN204807482U (en) | Measurement device for secondary electron performance parameters | |
| CN209356624U (en) | A kind of vacuum equipment for stable state Townsend discharge test | |
| CN108490277A (en) | Space charge measurement device and its measurement method suitable for interfacial effect research | |
| Herman et al. | Discharge chamber plasma structure of a 30 cm NSTAR-type ion engine | |
| Mason et al. | Variable angle photoelectron spectrometer | |
| CN117740385A (en) | Micro thruster diagnosis measuring device and operation method thereof | |
| CN111031651A (en) | Method for measuring plasma beam density distribution | |
| CN109752601A (en) | A kind of device measuring ion thruster arc chamber wall surface Charge Dynamic Characteristic | |
| CN108051844B (en) | A kind of ion source line uniformity measurement apparatus | |
| CN112763812B (en) | Electrostatic scanning measurement system based on optical interference principle | |
| CN110780145A (en) | Emission testing device of direct-current high-voltage type accelerator electron gun | |
| KR101787876B1 (en) | A method and system for measuring plasma density using capacitance, and a prove therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |