CN112802810A - Temperature-uniforming plate and manufacturing method thereof - Google Patents
Temperature-uniforming plate and manufacturing method thereof Download PDFInfo
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- CN112802810A CN112802810A CN201911109226.4A CN201911109226A CN112802810A CN 112802810 A CN112802810 A CN 112802810A CN 201911109226 A CN201911109226 A CN 201911109226A CN 112802810 A CN112802810 A CN 112802810A
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Abstract
The application provides a temperature-uniforming plate and a manufacturing method thereof. Wherein, this temperature-uniforming plate has adopted the design of multilayer capillary structure, includes: a first shell surface and a second shell surface which are oppositely arranged; the first shell surface and the second shell surface form a closed cavity; the first shell surface is provided with a first capillary structure facing the cavity; the second shell surface is provided with a second capillary structure facing the cavity; the first capillary structure and the second capillary structure are connected through the central capillary structure; and one side of the central capillary structure, which is close to the first capillary structure, is provided with a gas channel, and the gas channel is connected with the cavity. According to the structure, the central capillary structure reduces the reflux resistance of the working liquid, so that the two performance indexes of the evaporation performance and the reflux resistance of the first capillary structure are improved simultaneously, the problem that the evaporation performance and the reflux resistance of the capillary structure of the traditional temperature-uniforming plate are restricted mutually is solved, the heat dissipation performance of the temperature-uniforming plate is improved, and the heat dissipation requirements of a chip with high power consumption and high heat flux density can be met.
Description
Technical Field
The application relates to the technical field of chip heat dissipation, in particular to a temperature-uniforming plate and a manufacturing method thereof.
Background
The operating performance of an electronic product is mainly determined by the performance of the chip. In general, the higher the computation speed of the chip, the higher the performance, and at the same time, the larger the amount of heat generated by the chip. When the chip runs, the heat generated by the chip must be timely conducted out through an effective heat dissipation means, if the heat of the chip cannot be timely conducted out, the temperature of the chip is increased, the phenomenon of overheating and frequency reduction (reduction of running frequency) of the chip occurs, and even the chip is overheated and burnt. With the continuous iteration of chip products, the performance of the chip is stronger and stronger, and the power consumption of the chip also shows an ascending trend. It is expected that in the near future, some chips may consume up to or in excess of 500 watts (watts), generating heat at powers in excess of 500 watts on chips that are only a few square centimeters in size, and presenting a significant challenge to heat dissipation from the chip. Meanwhile, the size of the chip is getting smaller and smaller due to the progress of the chip process, and the number of the gratings or transistors in a unit size is getting larger and larger, which leads to further increase of the heat flux density of the chip. The heat flux density is an important index affecting the temperature of the chip, and when the heat flux density is large, the temperature of the chip under the same heat dissipation condition is increased. At present, the heat flow density of the chip can reach about 50W/cm2With the further improvement of the chip performance, the heat flux density of the chip will break through 100W/cm in the future2This is a very big challenge for chip heat dissipation technology. Therefore, the heat dissipation problem of the high-energy-consumption and high-heat-flux chip becomes an important factor for restricting the further improvement of the chip performance.
The vapor chamber is a mainstream chip heat dissipation structure, and generally comprises a metal shell, a capillary structure and working liquid. The metal shell forms a closed cavity for containing the capillary structure and the working liquid, and the capillary structure is attached to the inner side of the metal shell and can adsorb the working liquid by utilizing capillary force. The metal shell is directly attached to the surface of the chip. When the chip generates heat, the working liquid close to the chip is heated and vaporized to form a gas working medium; the gas working medium can flow in the cavity, is liquefied when meeting cold in a region far away from the chip, releases heat, flows back to a region close to the chip through the capillary structure under the action of capillary force, is vaporized again, and thus reciprocates to take away the heat of the chip.
The thickness of the capillary structure has a crucial influence on the heat dissipation performance of the uniform temperature plate, and generally, the thicker the capillary structure is, the smaller the flow resistance of the working liquid is, so that the heat dissipation performance of the uniform temperature plate is improved; however, with the increase of the thickness of the capillary structure, the evaporation performance of the capillary structure will be reduced, which will restrict the further improvement of the heat dissipation performance of the temperature equalization plate, so that the temperature equalization plate cannot meet the heat dissipation requirement of the chip with high power consumption and high heat flux density.
Disclosure of Invention
The application provides a temperature-equalizing plate and a manufacturing method thereof, and aims to solve the problem that the heat dissipation capacity of the temperature-equalizing plate in the prior art cannot meet the heat dissipation requirement of a chip with high power consumption and high heat flow density.
In a first aspect, the present application provides a vapor chamber. This temperature-uniforming plate includes: a first shell surface and a second shell surface which are oppositely arranged; the first shell surface and the second shell surface form a closed cavity; the first shell surface is provided with a first capillary structure facing the cavity; the second shell surface is provided with a second capillary structure facing the cavity; the first capillary structure and the second capillary structure are connected through the central capillary structure; and one side of the central capillary structure, which is close to the first capillary structure, is provided with a gas channel, and the gas channel is connected with the cavity.
It should be understood that the first shell surface of the temperature equalization plate is attached to the chip, so that heat can be dissipated from the chip. Specifically, the chip is close to the position of the central capillary structure, heat generated by the chip is transferred to the first capillary structure through the first shell surface, and working liquid in the first capillary structure is heated, so that the working liquid is gasified to form a gas-phase working medium. The gas-phase working medium flows into the gas channel and overflows from the gas channel to the periphery, and finally diffuses and fills the whole cavity. When the gas-phase working medium contacts the second capillary structure with lower temperature, the gas-phase working medium is condensed into liquid when meeting the condensation, energy is released, and the released energy is transmitted to the second shell surface and finally diffused into the environment. Due to the existence of the central capillary structure, the condensed working liquid adsorbed by the second capillary structure can directly flow back into the first capillary structure through the central capillary structure under the action of capillary force, is heated and gasified again, and continuously takes away the heat of the chip. The central capillary structure can reduce the reflux resistance of the working liquid under the condition of not increasing the thickness of the first capillary structure, so that the evaporation performance of the first capillary structure cannot be influenced, the problem that the reflux resistance and the evaporation performance are restricted mutually is solved, the heat dissipation performance of the temperature equalization plate is improved, and the heat dissipation requirements of the chip with high power consumption and high heat flux density, which are met by the temperature equalization plate, are met.
In one possible embodiment, the first capillary structure comprises a heat source region capillary structure and a non-heat source region capillary structure; the thickness of the capillary structure of the heat source area along the direction vertical to the first shell surface is smaller than that of the capillary structure of the non-heat source area along the direction vertical to the first shell surface; the central capillary structure is connected with the heat source area capillary structure. Therefore, the heat source area capillary structure can have higher evaporation performance compared with a non-heat source area capillary structure, and the heat source area capillary structure is connected with the central capillary structure, so that the backflow resistance of the heat source area capillary structure cannot be influenced by thinning, the evaporation performance and the backflow resistance of the heat source area capillary structure are simultaneously optimized, the heat dissipation performance of the temperature equalization plate is improved, and the heat dissipation requirements of a chip with high power consumption and high heat flow density, which are met by the temperature equalization plate, are met.
In one possible embodiment of the method according to the invention,
the central capillary structure comprises a third capillary structure, a powder column array, at least one first powder ring and at least one second powder ring; the powder column array comprises a plurality of powder columns which are distributed at intervals; one end of the powder column is connected with the capillary structure of the heat source area; the other end of the powder column extends to the direction far away from the first shell surface and is connected with one side of the third capillary structure facing the first shell surface; a space is arranged between one side of the third capillary structure facing the second shell surface and the second capillary structure; one end of the first powder ring is connected with the capillary structure of the heat source area, and the other end of the first powder ring is connected with the third capillary structure; one end of the second powder ring is connected with the third capillary structure, and the other end of the second powder ring is connected with the second capillary structure. Therefore, the working liquid in the second capillary structure can be collected into the third capillary structure through the second powder ring and continuously and uniformly flows back into the heat source area capillary structure through the powder column array and the first powder ring, and the backflow performance of the heat source area capillary structure is improved.
In one possible embodiment, the third capillary structure comprises a plurality of air-guide holes; the air-conducting openings penetrate the third capillary structure from the side of the third capillary structure facing the first lateral surface to the side facing the second lateral surface. Therefore, the gas-phase working medium evaporated from the capillary structure of the heat source area can flow into the cavity close to the second capillary structure through the air guide hole, and is condensed into liquid by contacting with the second capillary structure, and energy is released. After condensation, the working liquid is absorbed by the second capillary structure and flows around each powder ring under the action of capillary force to be converged into the third capillary structure. Therefore, a gas-liquid circulation channel is added, and the heat radiation performance of the radiator is improved.
In a possible embodiment, one end of the support column is connected to the first lateral surface; the other end of the supporting column sequentially penetrates through the first capillary structure, the third capillary structure and the second capillary structure and is connected with the second shell surface. The support column can improve the structural strength of the temperature-uniforming plate, so that the temperature-uniforming plate is not easy to deform.
In one possible embodiment, the first powder ring and the second powder ring are disposed around the support post.
In a possible embodiment, the central capillary structure is provided with a plurality of channels on a side thereof adjacent to the first capillary structure, the channels being connected to the cavity to form the gas passage. The design of the channel is beneficial to improving the evaporation performance of the first capillary structure and the reflux uniformity of the working liquid, and reducing the reflux resistance, thereby improving the heat dispersion performance of the uniform temperature plate.
In a second aspect, the present application provides a method of manufacturing a vapor chamber. The method comprises the following steps: welding and installing the support column on the inner side of the first shell surface; sintering the first capillary structure on the inner side of the first shell surface; sintering the powder column array on the surface of the first capillary structure along the direction far away from the first shell surface, and sintering a first powder ring with the same height as the powder column array on the surface of the support column; sintering a third capillary structure at one end of the powder column array far away from the first shell surface; sintering a second powder ring on the surface of the support pillar, wherein one end of the second powder ring is connected with the third capillary structure, and the other end of the second powder ring is sintered to one end, away from the first shell surface, of the support pillar; sintering the second capillary structure on the inner side of the second shell surface; and welding the first shell surface and the second shell surface into a whole of a closed cavity, vacuumizing the cavity during welding, and completely combining the support column with the second shell surface so as to completely combine the powder ring with the second capillary structure.
In one possible embodiment, the first capillary structure comprises a heat source region capillary structure and a non-heat source region capillary structure; the thickness of the capillary structure of the heat source area along the direction vertical to the first shell surface is smaller than that of the capillary structure of the non-heat source area along the direction vertical to the first shell surface; the powder column array and the first powder ring are connected to the surface of the capillary structure in the heat source area.
In a third aspect, the present application provides an electronic device comprising a printed circuit board, a processor, a heat sink, and the thermal equalization plate provided in any of the above embodiments. The processor is fixedly arranged on the surface of the printed circuit board; the surface of the processor far away from the printed circuit board is attached and connected with the first shell surface of the temperature-uniforming plate; the radiator is attached to the second shell surface of the temperature-equalizing plate.
Therefore, according to the electronic equipment provided by the embodiment of the application, the problem that the evaporation performance and the reflux resistance of the capillary structure of the traditional temperature equalizing plate are restricted mutually is solved, the temperature equalizing plate has higher heat dissipation performance, and the heat dissipation requirements of chips with high power consumption and high heat flux density can be met, so that the electronic equipment can be provided with processors or other various chips with stronger installation performance, and the product performance of the electronic equipment is improved.
Drawings
FIG. 1 is a graph of power consumption trend of a graphics processor chip of a certain vendor over product iterations;
FIG. 2 is a diagram illustrating an application scenario for dissipating heat from a chip by using a vapor chamber;
FIG. 3 is a schematic diagram of the basic structure and operation principle of the vapor chamber;
FIG. 4 is a schematic diagram of a current capillary structure design of a vapor chamber;
FIG. 5 is a graph of thermal resistance measurements for a uniform temperature plate having a capillary structure of uniform thickness;
FIG. 6 is a schematic diagram of another prior art capillary structure design of a vapor chamber;
FIG. 7 is a schematic view of the internal structure of the vapor chamber according to the first embodiment of the present application;
FIG. 8 is a schematic diagram of an array of powder pillars provided in an embodiment of the present application;
fig. 9 is a cross-sectional view of a first powder ring and a second powder ring provided in an embodiment of the present application;
FIG. 10 is a schematic diagram of an operation of a vapor chamber provided in an embodiment of the present application;
FIG. 11 is a cross-sectional view of the powder pillar array taken in a direction perpendicular to the first shell surface;
FIG. 12 is a schematic view of a third capillary structure provided by an embodiment of the present application;
FIG. 13 is a schematic view of a working fluid in a vapor phase traversing a third capillary structure;
FIG. 14 is a schematic diagram of simulation analysis of a vapor chamber provided in an embodiment of the present application;
FIG. 15 is a schematic diagram of a method for manufacturing a vapor chamber according to the present application;
FIG. 16 is a schematic view of the inner structure of a vapor chamber according to a second embodiment of the present application;
fig. 17 is a schematic internal structural diagram of an electronic device according to a third embodiment of the present application.
Detailed Description
The operating performance of an electronic product is mainly determined by the performance of the chip. In general, the higher the computation speed of the chip, the higher the performance, and at the same time, the larger the amount of heat generated by the chip. When the chip runs, the heat generated by the chip must be timely conducted out through an effective heat dissipation means, if the heat of the chip cannot be timely conducted out, the temperature of the chip is increased, the phenomenon of overheating and frequency reduction (reduction of running frequency) of the chip occurs, and even the chip is overheated and burnt. Fig. 1 is a power consumption trend graph of a Graphics Processing Unit (GPU) of a certain vendor according to product iteration. With the continuous iteration of chip products, the performance of the chip is stronger and stronger, and the power consumption of the chip also shows an ascending trend. It is expected that in the near future, the power consumption of higher performance chip products may reach or exceed 500W (watts), being only a few in sizeHeat generation on a square centimeter chip at powers in excess of 500W is a significant challenge to heat dissipation from the chip. Meanwhile, the size of the chip is getting smaller and smaller due to the progress of the chip process, and the number of the gratings or transistors in a unit size is getting larger and larger, which results in the heat flux density (also called heat flux density, which is the heat flux passing through a unit area, and the unit of the heat flux density is watt/square meter (W/m) in international unit system2) Or Watt/square centimeter (W/cm)2) ) is further increased. The heat flux density is an important index affecting the temperature of the chip, and when the heat flux density is large, the temperature of the chip under the same heat dissipation condition is increased. At present, the heat flow density of the chip can reach about 50W/cm2With the further improvement of the chip performance, the heat flux density of the chip will break through 100W/cm in the future2This is a very big challenge for chip heat dissipation technology. Therefore, the heat dissipation problem of the high-energy-consumption and high-heat-flux chip becomes an important factor for restricting the further improvement of the chip performance.
Among various chip heat dissipation schemes, a vapor chamber (VC, also called a vapor chamber) is an effective heat dissipation structure. Fig. 2 is a diagram illustrating an application scenario of heat dissipation for a chip by using a vapor chamber. The scheme of using the temperature equalization plate for radiating the heat of the chip can be applied to electronic equipment such as a server, a router or a switch. As shown in fig. 2, the electronic device may include, for example, a housing 11 (or chassis); a main board 12, on which various electronic devices including a chip 13 can be mounted; the heat sink based on the uniform temperature plate 14 comprises the uniform temperature plate 14 and heat dissipation fins 15, wherein one side of the uniform temperature plate 14 is attached to the chip 13, and the heat dissipation fins 15 are attached to the other side of the uniform temperature plate 14. The equivalent thermal conductivity of the temperature equalization plate 14 is more than 10 times of that of pure copper, so that heat generated by the chip 13 can be absorbed, and the temperature equalization plate 14 absorbs the heat and further transfers the heat to the heat dissipation fins 15, and finally transfers the heat to the air. The electronic device may further include, as shown in fig. 2: a fan 16 for realizing air flow inside and outside the housing 11 and diffusing heat transferred to the air into the environment outside the housing 11; other hardware 17, for example: hard disk, memory, PCI-E interface device, optical module, Clock Data Recovery (CDR), and the like.
Fig. 3 shows the basic structure and operation principle of the vapor chamber. As shown in fig. 3, the vapor chamber generally comprises a metal housing 21, a capillary structure 22, and a working fluid (also referred to as a working medium). The metal shell 21 is sealed to form a cavity 23, and the capillary structure 22 is arranged in the cavity 23 and attached to the inner side of the metal shell 21; the cavity 23 may be evacuated to inject a working fluid, and the working fluid may be retained in the capillary structure 22 by the absorption of the capillary structure 22. The temperature equalization plate is attached to the chip 24 through the metal shell 21, according to the position relationship between the metal shell 21 and the chip 24, the area of the temperature equalization plate close to the chip 24 can be called an evaporation area, and the area of the temperature equalization plate far away from the chip 24 can be called a condensation area. The working principle of the temperature equalizing plate is as follows: the heat generated by the chip 24 during operation is conducted to the metal shell 21 of the evaporation zone, and the working liquid in the capillary structure 22 of the evaporation zone is heated, so that the working liquid in the capillary structure 22 of the evaporation zone is heated to generate a gasification phenomenon, and a gas-phase working medium is formed; the gas-phase working medium is diffused in the cavity 23 and fills the whole cavity 23; when the gas-phase working medium flows to the capillary structure 22 of the condensation area with lower temperature, the gas-phase working medium is condensed into liquid when meeting the condensation and releases heat; after condensation, the working liquid is absorbed by the capillary structure 22 of the condensation area, flows back to the evaporation area under the action of capillary force, is heated and gasified again, and forms gas-liquid circulation. The gas-liquid circulation mode in the temperature-equalizing plate can take away heat generated by the chip 24 repeatedly, reduce the temperature of the chip 24 and ensure the normal work of the chip 24.
The thickness of the capillary structure has a crucial influence on the heat dissipation performance of the vapor chamber. The heat dissipation performance of the vapor chamber can be represented by a parameter Qmax, the value of Qmax represents the maximum power consumption of the chip that the vapor chamber can satisfy, and if the power consumption of the chip exceeds Qmax, the vapor chamber will have performance deterioration, for example, the thermal resistance is increased, and the heat dissipation requirement of the chip cannot be satisfied. Generally, the thicker the capillary structure is, the smaller the flow resistance of the working liquid is, which is more beneficial to improving the Qmax of the temperature equalization plate, wherein the flow resistance of the working liquid mainly refers to the backflow resistance of the working liquid from the condensation area to the evaporation area; however, as the thickness of the capillary structure increases, the evaporation performance of the evaporation area is reduced, which restricts further reduction of the reflux resistance and ultimately restricts the heat dissipation performance of the vapor chamber.
FIG. 4 is a schematic diagram of a current capillary structure design of a vapor chamber. The metal shell of the vapor chamber may specifically include a lower metal shell 31 and an upper metal shell 32; wherein, a heat source 33, such as a chip, is disposed on one side of the lower metal housing 31, thereby forming an evaporation area on one side of the lower metal housing 31 and a condensation area on one side of the upper metal housing 32 away from the heat source 33; the lower metal housing 31 and the upper metal housing 32 are provided with capillary structures on the inner sides thereof, and for convenience of description, the capillary structure on the side of the lower metal housing 31 is referred to as an evaporation area capillary structure 34, and the capillary structure on the side of the upper metal housing 32 is referred to as a condensation area capillary structure 35. As shown in fig. 4, the evaporation zone wick structure 34 of the vapor chamber is of uniform thickness design, i.e., the evaporation zone wick structure 34 has the same thickness in the heat source zone 36 and other zones, and has relatively low resistance to reflow.
The heat dissipation performance of the vapor chamber can be expressed as thermal resistance, which is a heat-related property and refers to the ability of an object to resist heat transfer in the presence of a temperature difference. The lower the thermal resistance, the better the heat dissipation performance of the soaking plate, and the higher the thermal resistance, the worse the heat dissipation performance of the soaking plate. The unit of thermal resistance is K/W (kelvin per watt) or ℃/W (degrees celsius per watt) and refers to the ratio between the temperature difference across the object (kelvin or degrees celsius) and the power of the heat source when heat is transferred across the object. FIG. 5 is a thermal resistance test chart of the temperature-uniforming plate having the equal-thickness capillary structure. Wherein the horizontal axis represents the power consumption of the chip and the vertical axis represents the thermal resistance of the vapor chamber. The dotted line in fig. 5 represents the expected thermal resistance when the thermal uniforming plate can meet the heat dissipation requirements of a chip with high power consumption and high heat flux density. The curve in fig. 5 shows the relationship between the thermal resistance of the temperature-uniforming plate and the power consumption of the chip, and it can be seen from this curve that the thermal resistance of the temperature-uniforming plate decreases as the power consumption of the chip increases as a whole, but as the power consumption of the chip increases, the trend of the thermal resistance decrease exhibited by the temperature-uniforming plate is weaker and weaker under the contradictory constraints of the evaporation performance and the reflux resistance of the capillary structure of the temperature-uniforming plate, and it is difficult to meet the heat dissipation requirements of the chip with high power consumption and high heat flux density.
FIG. 6 is a schematic diagram of another prior art capillary structure design of a vapor chamber. The capillary structure shown in fig. 6 differs in design from the capillary structure shown in fig. 4 in that: the evaporation zone wick structure 34 of fig. 6 is designed to be thinner in the heat source region 36, i.e., the evaporation zone wick structure 34 has a smaller thickness in the heat source region 36 than in other regions, in an attempt to improve the evaporation performance of the evaporation zone wick structure 34 in the heat source region. However, due to the reduction of the thickness, the flow resistance of the evaporation region capillary structure 34 in the heat source region 36 is increased, so that the Qmax of the temperature equalization plate is reduced, and it is also difficult to meet the heat dissipation requirement of the chip with high power consumption and high heat flux density.
The application provides a temperature equalization plate. Compared with the existing temperature equalizing plate, the temperature equalizing plate has the advantages that the flow resistance of working liquid is reduced, the evaporation performance of the capillary structure in an evaporation area in a heat source area is improved, and the heat dissipation requirements of a chip with high power consumption and high heat flow density are met.
The following is a first embodiment of the present application, providing a vapor chamber.
Fig. 7 is a schematic view of an internal structure of a vapor chamber according to a first embodiment of the present application. As shown in fig. 7, the vapor chamber includes a metal housing 40, a first capillary structure 41, a second capillary structure 42, and a third capillary structure 43. The metal shell 40 includes a first shell surface 51 and a second shell surface 52 which are oppositely arranged, and edges of the first shell surface 51 and the second shell surface 52 are connected with each other, so that the metal shell 40 forms a closed cavity 44. In the embodiment of the present application, the metal housing 40 may be made of a material having high thermal conductivity, such as copper and its alloy. The first shell surface 51 and the second shell surface 52 may be welded together by a welding process such as diffusion welding or brazing to form the closed cavity 44. During the welding process, the cavity 44 to be formed may be vacuumized, so that the cavity 44 has a certain degree of vacuum after being sealed.
As further shown in fig. 7, the first capillary structure 41 is attached to the inside of the first shell surface 51. The first capillary structure 41 comprises a heat source region capillary structure 45 and a non-heat source region capillary structure 46, the non-heat source region capillary structure 46 being arranged around the heat source region capillary structure 45. In the embodiment of the present application, the first capillary structure 41 may be a porous structure, that is, the first capillary structure 41 is densely covered with small holes or grids that can absorb and accommodate the flow of the working liquid, for example: sintered copper powder structures formed by sintering copper alloy powder at a high temperature, sintered copper mesh structures formed by sintering copper mesh at a high temperature, and the like. The first capillary structure 41 may be attached to the first lateral surface 51 by sintering, diffusion welding or other processes so that it is tightly bonded to the first lateral surface 51. In the embodiment of the present application, when the first capillary structure 41 is a sintered copper powder structure or a sintered copper mesh structure, the mesh number of the sintered copper powder structure or the sintered copper mesh structure is preferably controlled to be less than 400 mesh, so as to ensure good capillary force and adsorption.
Optionally, the thickness B1 of the heat source region capillary structure 45 in the direction perpendicular to the first shell surface 51 is less than the thickness B2 of the non-heat source region capillary structure 46 in the direction perpendicular to the first shell surface 51, so that the heat source region capillary structure 45 has better evaporation performance than the non-heat source region capillary structure 46, and the non-heat source region capillary structure 46 has less reflow resistance than the heat source region capillary structure 45. By way of example, the thickness B1 of the heat source zone capillary structure 45 may be 10% -90% of the thickness B2 of the non-heat source zone capillary structure 46, such as: b1-20% B2, B1-50% B2, B1-70% B2, and the like. In the embodiment of the present application, the thickness B1 of the heat source zone wick structure 45 is preferably not more than 2.0mm (millimeters) to ensure good evaporation performance.
As further shown in fig. 7, the second capillary structure 42 is attached to the inside of the second shell surface 52, and is disposed to be opposed to the first capillary structure 41 with a space therebetween. In the embodiment of the present application, the second capillary structure 42 may be a porous structure, such as: sintered copper powder structures, sintered copper mesh structures, and the like. The second capillary structure 42 may be attached to the second shell surface 52 by sintering, diffusion welding, or other process to form a tight bond with the second shell surface 52. The second capillary structure 42 may be a structure having an equal thickness, so that the second capillary structure 42 can have a uniform backflow resistance. In the embodiment of the present application, when the second capillary structure 42 is a sintered copper powder structure or a sintered copper mesh structure, the mesh number of the sintered copper powder structure or the sintered copper mesh structure is preferably less than 400 meshes, so as to ensure good capillary force and adsorption; the thickness of the second capillary structure 42 is preferably no more than 2.0mm (millimeters).
As further shown in fig. 7, the third capillary structure 43 is disposed between the first capillary structure 41 and the second capillary structure 42, above the heat source area capillary structure 45 in a direction perpendicular to the first shell surface 51. The third capillary structure 43 has a certain gap distance with respect to both the first capillary structure 41 and the second capillary structure 42. The third capillary structure 43 has a thickness in a direction perpendicular to the first shell surface 51, for example close to the thickness of the non-heat source region capillary structure 46; at the same time, the third capillary structure 43 has a larger projected area in the direction perpendicular to the first shell surface 51, for example, an area close to the heat source region capillary structure 45; the structure design enables the whole backflow resistance of the capillary structure to be small, and a large amount of working liquid can be adsorbed and contained. In the present embodiment, the third capillary structure 43 may be a porous structure, such as: sintered copper powder structures, sintered copper mesh structures, foam copper structures, porous copper structures, or the like. When the third capillary structure 43 is a sintered copper powder structure or a sintered copper mesh structure, the mesh number of the sintered copper powder structure or the sintered copper mesh structure is preferably less than 400 meshes to ensure good capillary force and adsorption; when the third capillary structure 43 is a copper foam structure or a porous copper structure, the porosity of the copper foam structure or the porous copper structure is preferably less than 95% to ensure good capillary force and adsorption; the thickness of the third capillary structure 43 is preferably no more than 5.0mm (millimeters) to ensure that a larger cavity is left while having a low backflow resistance.
As further shown in fig. 7, a powder column array 47 is disposed between the heat source area capillary structure 45 and the third capillary structure 43, the powder column array 47 includes a plurality of powder columns 48 distributed at intervals, one end of each powder column 48 is connected to the heat source area capillary structure 45, and the other end is connected to the third capillary structure 43. In the embodiment of the present application, the powder pillar 48 may have a porous structure, such as: sintered copper powder structures, sintered copper mesh structures, and the like. The pillars 48 may be tightly bonded to the heat source region wick structure 45 and the third wick structure 43 by sintering, diffusion welding, or other processes. In the embodiment of the present application, when the powder pillar 48 is a sintered copper powder structure or a sintered copper mesh structure, the mesh number of the sintered copper powder structure or the sintered copper mesh structure is preferably less than 400 meshes, so as to ensure good capillary force and adsorption; the height and diameter of the powder column 48 are preferably not more than 5.0mm (millimeter), so that the distance for the working liquid to flow back from the third capillary structure 43 to the heat source region capillary structure 45 is not excessively long, and a sufficiently large gas passage is left to ensure the diffusion effect of the gas-phase working substance.
As further shown in fig. 7, at least one first powder ring 50 is disposed between the heat source region capillary structure 45 and the third capillary structure 43, and one end of the first powder ring 50 is connected to the heat source region capillary structure 45, and the other end is connected to the third capillary structure 43. At least one second powder ring 49 is arranged between the second capillary structure 42 and the third capillary structure 43, one end of the second powder ring 49 is connected with the second capillary structure 42, the other end of the second powder ring 49 is connected with the third capillary structure 43, and when the number of the first powder rings 50 is more than one, the first powder rings 50 are distributed at intervals with certain gaps. When the number of the second powder rings 49 is more than one, the plurality of second powder rings 49 are distributed at intervals with a certain gap. In the embodiment of the present application, the first powder ring 50 and the second powder ring 49 may be porous structures, such as: sintered copper powder structures, sintered copper mesh structures, and the like. The first powder ring 50 may be tightly bonded to the heat source region wick structure 45 and the third wick structure 43 by sintering, diffusion welding, or other processes. The second powder ring 49 may be tightly bonded to the second capillary structure 42 and the third capillary structure 43 by sintering, diffusion welding, or other processes.
Fig. 8 is a schematic diagram of a powder column array provided in an embodiment of the present application. For the convenience of description of the powder pillar array 47, the third capillary structure 43 is explosively decomposed in a direction perpendicular to the first shell surface 51 in fig. 8. As shown in fig. 8, each powder pillar 48 is spaced apart from each adjacent powder pillar 48 to form a gas channel 61 connected between each powder pillar 48, and the gas channel 61 is simultaneously communicated with other areas of the cavity 44. In some embodiments, each powder pillar 48 in the powder pillar array 47 can be distributed in an equidistant array at a fixed distance, such that the same gas channel 61 is provided between any adjacent powder pillars 48.
In the embodiment of the present application, the third capillary structure 43, the powder pillar array 37, and the first powder ring 50 and the second powder ring 49 may be collectively referred to as a central capillary structure, and the central capillary structure connects the first capillary structure 41 and the second capillary structure 42 to form a return channel of the working liquid.
Fig. 9 is a cross-sectional view of a first powder ring 50 and a second powder ring provided in an embodiment of the present application. As shown in fig. 9, the vapor chamber further includes at least one supporting pillar 62, one end of the supporting pillar 62 is connected to the first shell surface 51, and the other end extends toward the second shell surface 52, passes through the third capillary structure 43, and finally is connected to the second shell surface 52. The support posts 62 may be made of a material having high thermal conductivity, such as copper and its alloys. The first powder ring 50 and the second powder ring 49 are disposed around the supporting pillar 62 and wrap the supporting pillar 62. In one implementation, as shown in the a structure of fig. 9, the first powder ring 50 and the second powder ring 49 may be attached to the surface of the supporting column 62 in close contact with the supporting column 62. In another implementation, as shown in the structure b of fig. 9, the first powder ring 50 and the second powder ring 49 may have a certain gap with the supporting column 62 or may form a non-close contact with the supporting column 62.
Fig. 10 is a schematic diagram of an operation of the vapor chamber according to the embodiment of the present application. As shown in fig. 10, when the vapor chamber is used, the first shell surface 51 is attached to a heat source 63 (for example, a chip with high power consumption and high heat flux density), and the heat source region capillary structure 45 inside the first shell surface 51 is positioned right above the heat source 63 to form a heat source region. When the heat source 63 is in a working state, heat generated by the heat source 63 is firstly transferred to the heat source area capillary structure 45 closest to the heat source 63 through the first shell surface 51, and working liquid in the heat source area capillary structure 45 is heated, so that the temperature of the working liquid in the heat source area capillary structure 45 is increased, a gasification phenomenon is generated, and a gas-phase working medium is formed. The gas-phase working substance flows into the gas channel 61 between the heat source region capillary structure 45 and the third capillary structure 43 and overflows from the gas channel 61 all around, and finally diffuses and fills the entire cavity 44. When the gas-phase working substance comes into contact with the capillary structure having a lower temperature, for example, the second capillary structure 42 attached to the inner side of the second shell surface 52, the gas-phase working substance encounters the liquid condensate and releases energy, and the released energy is transferred to the second shell surface 52 and finally diffused into the environment. After condensation, the working liquid is adsorbed by the second capillary structure 42 and flows through each second powder ring 49 under the action of capillary force to be collected in the third capillary structure 43. The working liquid in the third capillary structure 43 flows back to the heat source region capillary structure 45 through each powder column 48 and the first powder ring 50 under the action of capillary force, is heated and gasified again, and continuously takes away heat generated by the heat source 63, so that continuous circulation between gas and liquid is formed.
FIG. 11 is a cross-sectional view of the powder pillar array taken in a direction perpendicular to the first shell surface. The process of the gas phase working medium overflowing to the periphery in the gas channel 61 can be specifically described by fig. 11. When the working liquid in the heat source zone capillary structure 45 is gasified into a gas phase working medium, the gas phase working medium flows into the gas channel 61 firstly; because the working liquid is continuously gasified into the gas phase working medium, the local gas pressure of the gas channel 61 is higher, and the gas phase working medium can diffuse to the periphery outside the gas channel 61 under the action of the gas pressure, and finally the whole cavity 44 is filled.
Fig. 12 is a schematic diagram of a third capillary structure provided by an embodiment of the present application. As an alternative embodiment, as shown in fig. 12, the third capillary structure 43 may be provided with a plurality of air holes 64 penetrating along the thickness direction thereof, so that the gas-phase working medium formed after the working liquid is gasified may diffuse from one side of the third capillary structure 43 to the other side through the air holes 64.
When the third capillary structure 43 includes the air vent 64, as shown in fig. 13, the gas-phase working medium generated by the vaporization of the working liquid in the heat source area capillary structure 45 may also pass through the third capillary structure 43 through the air vent 64, enter the cavity 44 near the second capillary structure 42, contact with the second capillary structure 42, condense into liquid, and release energy. After condensation, the working liquid is adsorbed by the second capillary structure 42 and flows through each second powder ring 49 under the action of capillary force to be collected in the third capillary structure 43. Therefore, a gas-liquid circulation channel is added, and the heat radiation performance of the radiator is improved.
In the embodiment of the present application, the working liquid may be a liquid having a high latent heat of vaporization. Latent heat of vaporization is a physical property of a substance, and refers to the energy absorbed by a unit mass of a liquid substance in a gasification process under a certain atmospheric pressure (e.g., standard atmospheric pressure). Therefore, it can be easily understood that the higher the latent heat of vaporization of the working liquid, the more heat that can be taken away from the heat source region during vaporization of the working liquid, and the more beneficial the heat dissipation effect of the vapor chamber is. Illustratively, the working liquid may be a liquid simple substance such as water, methanol, acetone, etc., or a mixture thereof.
Fig. 14 is a schematic diagram of simulation analysis of the vapor chamber provided in the embodiment of the present application. The simulation analysis was done using Fluent software for fluid mechanics analysis in the well-known finite element analysis platform Ansys Workbench. In the simulation analysis, all capillary structures of the embodiment of the application are modeled (including a first capillary structure 41, a second capillary structure 42, a third capillary structure 43, a powder column 48, a first powder ring 50 and a second powder ring 49), and the capillary structures are assigned in model parameters according to parameters such as real mesh number, permeability and the like; the simulation analysis also sets the first capillary structure 41 as the outlet boundary of the fluid and the second capillary structure 42 as the inlet boundary of the fluid. The capillary structure shown in fig. 5 was also subjected to simulation analysis in the examples of the present application based on the same model dimensions and model parameters, and used as a control.
Table 1 is the results of the simulation analysis.
| Back flow resistance of capillary structure | Capillary structure of embodiment one | FIG. 5 shows a capillary structure | Analysis results |
| Inlet to outlet boundary | 2021.5Pa | 2259.8Pa | Descend |
| Heat source zone | 308.6Pa | 575.2Pa | Descend |
TABLE 1
As can be seen from table 1, compared with the capillary structure shown in fig. 5, the backflow resistance of the capillary structure in the first embodiment of the present application decreases from 2259.8Pa to 2021.5Pa by 11% as a whole (i.e., from the inlet boundary to the outlet boundary), and the backflow resistance of the capillary structure locally decreases from 575.2Pa to 308.6Pa in the evaporation region by 46%, which shows that the capillary structure in the first embodiment of the present application makes the backflow resistance of the heat source region decrease significantly. In combination with other analysis results, in the embodiments of the present application, under different dimensions of the vapor chamber, the reflux resistance of the capillary structure can be reduced by 10% to 30% as a whole, and in the heat source region, the reflux resistance of the capillary structure can be reduced by 50%. The Qmax value of the vapor chamber can be increased by approximately 200W according to the decrease range of the backflow resistance.
FIG. 15 is a schematic diagram of a method for manufacturing a vapor chamber according to an embodiment of the present disclosure. As shown in fig. 15, the temperature equalization plate with the multi-layer capillary structure can be manufactured by the following steps:
step 1, the support pole 62 is welded and mounted on the inner side of the first shell surface 51.
Step 3, sintering the powder column array 47 on the surface of the heat source region capillary structure 45 along the direction far away from the first shell surface 51, sintering the first powder ring 50 with the same height as the powder column array 47 on the surface of the support pillar 62, and sintering the third capillary structure 43 at the end of the powder column array 47 far away from the first shell surface 51.
It should be noted that, according to Step 1 to Step 6 shown in fig. 15, a manufacturing process that can be used for manufacturing the temperature equalization plate is understood, and not a Step that must be followed for manufacturing the temperature equalization plate. Therefore, in the actual production, the skilled person can adjust the sequence of Step 1 to Step 6 according to the production conditions, the manufacturing process and the like, or split or combine one or more of Step 1 to Step 6, and the like, without departing from the scope of protection of the embodiments of the present application.
According to the technical scheme, the temperature-uniforming plate provided by the embodiment of the application adopts a multi-layer capillary structure design. Wherein, the heat source area capillary structure only uses the thinning design, which is beneficial to improving the evaporation performance. The third capillary structure is arranged at the interval between the second capillary structure and the heat source area capillary structure, the second capillary structure and the third capillary structure are connected by using a plurality of powder rings and powder column arrays to form a backflow channel of working liquid, and the backflow resistance of the working liquid is reduced, so that the two performance indexes of the evaporation performance and the backflow resistance of the heat source area capillary structure are improved simultaneously, the problem that the evaporation performance and the backflow resistance of the traditional uniform temperature plate capillary structure are restricted mutually is solved, the heat dissipation performance of the uniform temperature plate is improved, and the heat dissipation requirement of a chip with high power consumption and high heat flow density can be met.
The following is a second embodiment of the present application, providing a vapor chamber.
Fig. 16 is a schematic view of an internal structure of a vapor chamber according to a second embodiment of the present application. As shown in fig. 16, the vapor chamber includes a metal housing 40, a first capillary structure 41, a second capillary structure 42, and a fourth capillary structure 65. The metal shell 40 includes a first shell surface 51 and a second shell surface 52 which are oppositely arranged, and edges of the first shell surface 51 and the second shell surface 52 are connected with each other, so that the metal shell 40 forms a closed cavity 44. In the embodiment of the present application, the metal housing 40 may be made of a material having high thermal conductivity, such as copper and its alloy. The first shell surface 51 and the second shell surface 52 may be welded together by a welding process such as diffusion welding or brazing to form the closed cavity 44. During the welding process, the cavity 44 to be formed may be vacuumized, so that the cavity 44 has a certain degree of vacuum after being sealed.
The first capillary structure 41 is attached to the inside of the first shell surface 51. The first capillary structure 41 comprises a heat source region capillary structure 45 and a non-heat source region capillary structure 46, the non-heat source region capillary structure 46 being arranged around the heat source region capillary structure 45. In the embodiment of the present application, the first capillary structure 41 may be a porous structure, such as: sintered copper powder structures formed by sintering copper alloy powder at a high temperature, sintered copper mesh structures formed by sintering copper mesh at a high temperature, and the like. The first capillary structure 41 may be attached to the first lateral surface 51 by sintering, diffusion welding or other processes so that it is tightly bonded to the first lateral surface 51.
The thickness B1 of the heat source region capillary structure 45 in the direction perpendicular to the first shell face 51 is less than the thickness B2 of the non-heat source region capillary structure 46 in the direction perpendicular to the first shell face 51, and therefore the heat source region capillary structure 45 has better evaporation performance than the non-heat source region capillary structure 46, and the non-heat source region capillary structure 46 has less resistance to reflow than the heat source region capillary structure 45. Illustratively, the thickness B1 of the heat source region capillary structure 45 may be 10% -90% of the thickness B2 of the non-heat source region capillary structure 46.
The second capillary structure 42 is attached to the inner side of the second surface 52 and is positioned opposite to the first capillary structure 41 with a space therebetween. The second capillary structure 42 may be a porous structure, for example: sintered copper powder structures, sintered copper mesh structures, and the like. The second capillary structure 42 may be attached to the second shell surface 52 by sintering, diffusion welding, or other process to form a tight bond with the second shell surface 52. The second capillary structure 42 may be a structure having an equal thickness, so that the second capillary structure 42 can have a uniform backflow resistance.
Technical details that are not described in the first capillary structure 41 and the second capillary structure 42 in the second embodiment of the present application may be implemented with reference to the first embodiment, and are not described herein again.
As further shown in fig. 16, the fourth capillary structure 65 is connected at one end to the heat source region capillary structure 45 and at the other end to the second capillary structure 42. The fourth capillary structure 65 is hollowed at a side close to the heat source region capillary structure 45 to form a plurality of channels 66, so as to form a gas passage, and the gas passage can provide a flowing space for a gas-phase working medium generated after evaporation of the working liquid in the heat source region capillary structure 45, and facilitate overflow of the gas-phase working medium, so as to diffuse into the surrounding cavity 44. The fourth capillary structure 65 has a larger projected area in the direction perpendicular to the first shell surface 51, for example, an area close to the heat source region capillary structure 45, so that the fourth capillary structure 65 has a larger volume, a smaller back flow resistance, and is capable of adsorbing and containing a large amount of the working liquid. The fourth capillary structure 65 may be a porous structure, for example: sintered copper powder structures, sintered copper mesh structures, foam copper structures, porous copper structures, or the like. The fourth capillary structure 65 may be connected to the heat source region capillary structure 45 and the second capillary structure 42 by sintering, diffusion welding, or other processes, so that it is tightly combined with the heat source region capillary structure 45 and the second capillary structure 42, thereby effectively transferring the working liquid, and supporting the metal casing 40, thereby ensuring the strength of the metal casing 40.
As shown in fig. 16, when the vapor chamber is used, the first shell surface 51 is attached to a heat source 63 (e.g., a chip with high power consumption and high heat flux density), and the heat source capillary structure 45 in the heat source region inside the first shell surface 51 is positioned right above the heat source 63 to form a heat source region. When the heat source 63 is in a working state, heat generated by the heat source 63 is firstly transferred to the heat source area capillary structure 45 closest to the heat source 63 through the first shell surface 51, and working liquid in the heat source area capillary structure 45 is heated, so that the temperature of the working liquid in the heat source area capillary structure 45 is increased, a gasification phenomenon is generated, and a gas-phase working medium is formed. The gas-phase working substance will flow into the gas channel of the fourth capillary structure 65 and overflow from the gas channel all around, eventually spreading and filling the entire cavity 44. When the gas-phase working substance comes into contact with the capillary structure having a lower temperature, for example, the second capillary structure 42 attached to the inner side of the second shell surface 52, the gas-phase working substance encounters the liquid condensate and releases energy, and the released energy is transferred to the second shell surface 52 and finally diffused into the environment. The condensed working liquid is adsorbed by the second capillary structure 42 and flows into the fourth capillary structure 65 by the capillary force. The working liquid in the fourth capillary structure 65 continuously flows back to the heat source region capillary structure 45 under the action of the capillary force, is heated and gasified again, and continuously takes away the heat generated by the heat source 63, so that continuous circulation between gas and liquid is formed.
According to the technical scheme, the temperature-uniforming plate provided by the embodiment of the application adopts a multi-layer capillary structure design. Wherein, the heat source area capillary structure only uses the thinning design, which is beneficial to improving the evaporation performance. The fourth capillary structure is arranged between the second capillary structure and the heat source area capillary structure, so that a backflow channel from the second capillary structure to the heat source area capillary structure through the fourth capillary structure is formed, the backflow resistance of the working liquid is reduced, the evaporation performance and the backflow resistance of the heat source area capillary structure are improved at the same time, the problem that the evaporation performance and the backflow resistance of the traditional uniform temperature plate capillary structure are restricted mutually is solved, the heat dissipation performance of the uniform temperature plate is improved, and the heat dissipation requirements of a chip with high power consumption and high heat flow density can be met.
It should be added that, in various embodiments of the present application, the design of the multi-layer capillary structure of the temperature equalization plate may be used to provide heat dissipation for a single heat source (single chip), or may be used to provide heat dissipation for multiple heat sources (multiple chips). When the temperature-equalizing plate is used for providing heat dissipation for multiple heat sources, multiple multilayer capillary structures can be correspondingly arranged in the temperature-equalizing plate according to the positions of the heat sources.
The following is a third embodiment of the present application, which provides an electronic device.
Fig. 17 is a schematic internal structural diagram of an electronic device according to a third embodiment of the present application. As shown in fig. 17, the electronic device includes a housing 71, a printed circuit board 72, at least one processor 74, at least one heat sink 76 disposed corresponding to the at least one processor 74, and at least one temperature equalization plate 75 provided in the first embodiment or the second embodiment of the present application. For convenience of describing the positional relationship of the printed circuit board 72, the processor 74, the heat sink 76 and the temperature-uniforming plate 75, fig. 17 shows the processor 74, the heat sink 76 and the temperature-uniforming plate 75 exploded along the direction a. The printed circuit board 72 is fixedly mounted in the housing 71, the processor 74 is fixedly mounted on the surface of the printed circuit board 72, the first shell surface of the temperature equalization plate 75 is attached to the upper surface of the processor 74 away from the printed circuit board 72, the area of the temperature equalization plate 75 provided with the heat source area capillary structure is attached to the surface of the processor 74, and the second shell surface of the temperature equalization plate 75 is attached to the heat sink 76.
Alternatively, the processor 74 may be solder-mounted directly on the surface of the printed circuit board 72 by Ball Grid Array (BGA) technology; the processor 74 may also be fixedly mounted on the surface of the printed circuit board 72 by using a Land Grid Array (LGA) or Pin Grid Array (PGA) technology, when the processor 74 is packaged by using an LGA or PGA, the printed circuit board 72 is provided with a socket holder 73, and the processor 74 is placed in the socket holder 73 and is fixed by a structure such as a clip. In the embodiment of the present application, the processor 74 may include, for example, a Central Processing Unit (CPU), a Graphics Processing Unit (GPU), a system on chip (SoC) neural Network Processor (NPU), and various heat-generating chips or semiconductor devices.
Alternatively, the heat sink 76 may be a fin structure formed by stacking multiple metal sheets, and the heat sink 76 is used for absorbing heat from the vapor chamber and dissipating the heat to the environment by using a larger surface area of the fin structure. The heat sink 76 may be made of a material having high thermal conductivity such as a metal such as copper or aluminum, or an alloy thereof.
Optionally, the electronic device further comprises various types of memory, such as volatile memory and non-volatile memory. The volatile memory may include at least one dynamic random access memory DRAM (77), and the nonvolatile memory may include at least one Hard Disk Drive (HDD), at least one solid-state drive (SSD), and the like. Various memories may be connected to the printed circuit board through slots or terminals.
Optionally, the electronic device further comprises at least one heat dissipation fan 78. A heat dissipation fan 78 is fixedly mounted in the housing 71 and is disposed facing the processor 74. When the heat dissipation fan 78 is powered on, it can generate wind blowing toward the processor 74 and the heat sink 76, accelerate the air flow in the area where the processor 74 and the heat sink 76 are located, quickly take away the heat released by the heat sink 76 to the environment, and blow the heat to the environment outside the electronic device through the heat dissipation holes 79 of the housing 71.
It should be added that the electronic devices in the embodiments of the present application include, but are not limited to: servers (e.g., rack-mounted servers, blade servers, tower servers, cabinet servers, etc.), personal computers, workstation devices, portable computers, computer card devices, industrial computers, switches, routers, gateway devices, Customer Premises Equipment (CPE), base station devices (e.g., baseband processing units (BBU), Radio Remote Units (RRUs), etc.), and various electronic devices that include chips and require heat dissipation for the chips.
According to the technical scheme, the electronic equipment provided by the embodiment of the application adopts the temperature equalizing plate provided by the first embodiment or the second embodiment of the application, and because the problem that the evaporation performance and the reflux resistance of the capillary structure of the traditional temperature equalizing plate are restricted mutually is solved, the temperature equalizing plate has higher heat dissipation performance and can meet the heat dissipation requirements of chips with high power consumption and high heat flux density, therefore, the electronic equipment can be provided with processors or other various chips with stronger performance, and the product performance of the electronic equipment is improved.
It should be added that in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Other embodiments of the present application will be apparent to those skilled in the art from consideration of the specification and practice of the application disclosed herein. This application is intended to cover any variations, uses, or adaptations of the invention following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the invention pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It will be understood that the present application is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the application is limited only by the appended claims.
Claims (10)
1. A vapor chamber, comprising: a first shell surface and a second shell surface which are oppositely arranged;
the first shell surface and the second shell surface form a closed cavity;
the first shell surface is provided with a first capillary structure facing the cavity;
the second shell surface is provided with a second capillary structure facing the cavity;
the first capillary structure and the second capillary structure are connected through a central capillary structure;
and one side of the central capillary structure, which is close to the first capillary structure, is provided with a gas channel, and the gas channel is connected with the cavity.
2. The vapor chamber of claim 1,
the first capillary structure comprises a heat source region capillary structure and a non-heat source region capillary structure;
the thickness of the heat source region capillary structure along the direction vertical to the first shell surface is smaller than that of the non-heat source region capillary structure along the direction vertical to the first shell surface;
the central capillary structure is connected with the heat source region capillary structure.
3. The vapor chamber of claim 2,
the central capillary structure comprises a third capillary structure, a powder column array, at least one first powder ring and at least one second powder ring;
the powder column array comprises a plurality of powder columns which are distributed at intervals; one end of the powder column is connected with the capillary structure of the heat source area; the other end of the powder column extends to the direction far away from the first shell surface and is connected with one side, facing the first shell surface, of the third capillary structure;
a space is arranged between one side of the third capillary structure facing the second shell surface and the second capillary structure;
one end of the first powder ring is connected with the heat source area capillary structure, and the other end of the first powder ring is connected with the third capillary structure;
one end of the second powder ring is connected with the third capillary structure, and the other end of the second powder ring is connected with the second capillary structure.
4. The vapor chamber of claim 3,
the third capillary structure comprises a plurality of air vents;
the air-guide hole penetrates through the third capillary structure from the side of the third capillary structure facing the first shell surface to the side facing the second shell surface.
5. The vapor chamber of claim 3 or 4, further comprising: at least one support post;
one end of the supporting column is connected with the first shell surface;
the other end of the supporting column sequentially penetrates through the first capillary structure, the third capillary structure and the second capillary structure and is connected with the second shell surface.
6. The vapor chamber of claim 5, wherein the first powder ring and the second powder ring are disposed around the support posts.
7. The vapor chamber of claim 2, wherein a side of the central capillary structure adjacent to the first capillary structure is provided with a plurality of channels, the channels connecting with the cavities to form the gas passages.
8. A method of manufacturing a vapor chamber, comprising:
welding and installing the support column on the inner side of the first shell surface;
sintering a first capillary structure on the inner side of the first shell surface;
sintering a powder column array on the surface of the first capillary structure along the direction far away from the first shell surface, and sintering a first powder ring with the same height as the powder column array on the surface of the support column;
sintering a third capillary structure at one end of the powder column array far away from the first shell surface;
sintering a second powder ring on the surface of the support pillar, wherein one end of the second powder ring is connected with the third capillary structure, and the other end of the second powder ring is sintered to one end, away from the first shell surface, of the support pillar;
sintering the second capillary structure on the inner side of the second shell surface;
and welding the first shell surface and the second shell surface into a whole body of a closed cavity, vacuumizing the cavity during welding, and completely combining the support columns and the second shell surface to completely combine the powder ring and the second capillary structure.
9. The method of claim 8,
the first capillary structure comprises a heat source region capillary structure and a non-heat source region capillary structure;
the thickness of the heat source region capillary structure along the direction vertical to the first shell surface is smaller than that of the non-heat source region capillary structure along the direction vertical to the first shell surface;
the powder column array and the first powder ring are connected to the surface of the capillary structure of the heat source region.
10. An electronic device, comprising:
a printed circuit board, a processor, a heat sink and the vapor chamber of any one of claims 1-7;
the processor is fixedly arranged on the surface of the printed circuit board;
the surface of the processor, which is far away from the printed circuit board, is attached to and connected with the first shell surface of the temperature equalizing plate;
the radiator is attached to the second shell surface of the temperature-uniforming plate.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113437034A (en) * | 2021-08-25 | 2021-09-24 | 中兴通讯股份有限公司 | Temperature equalization plate and electronic equipment |
| CN114199057A (en) * | 2021-12-23 | 2022-03-18 | 特能(厦门)超导科技有限公司 | Temperature-uniforming plate device and production method thereof |
| WO2024051332A1 (en) * | 2022-09-09 | 2024-03-14 | 华为技术有限公司 | Vapor chamber, electronic device and chip packaging structure |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101029805A (en) * | 2006-03-03 | 2007-09-05 | 富准精密工业(深圳)有限公司 | Hot pipe |
| CN101052290A (en) * | 2007-05-11 | 2007-10-10 | 华南理工大学 | High efficiency heat radiation cool plate for electronic device |
| CN101354221A (en) * | 2007-07-25 | 2009-01-28 | 贸晖科技股份有限公司 | Temperature equalization plate and capillary structure and method for manufacturing the same |
| US20090025910A1 (en) * | 2007-07-27 | 2009-01-29 | Paul Hoffman | Vapor chamber structure with improved wick and method for manufacturing the same |
| CN101995183A (en) * | 2009-08-19 | 2011-03-30 | 富准精密工业(深圳)有限公司 | Flat heat pipe |
| CN201903277U (en) * | 2010-11-16 | 2011-07-20 | 深圳东桥华瀚科技有限公司 | Vapor Chamber and LED (light emitting diode) module |
| CN102595861A (en) * | 2012-03-12 | 2012-07-18 | 华南理工大学 | Vapor chamber having support posts with inner-sintering structure |
| CN107621184A (en) * | 2017-08-29 | 2018-01-23 | 苏州天脉导热科技有限公司 | Superconduction soaking plate |
| CN107764116A (en) * | 2017-10-16 | 2018-03-06 | 华南理工大学 | Ultrathin flexible soaking plate and its manufacture method |
-
2019
- 2019-11-13 CN CN201911109226.4A patent/CN112802810B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101029805A (en) * | 2006-03-03 | 2007-09-05 | 富准精密工业(深圳)有限公司 | Hot pipe |
| CN101052290A (en) * | 2007-05-11 | 2007-10-10 | 华南理工大学 | High efficiency heat radiation cool plate for electronic device |
| CN101354221A (en) * | 2007-07-25 | 2009-01-28 | 贸晖科技股份有限公司 | Temperature equalization plate and capillary structure and method for manufacturing the same |
| US20090025910A1 (en) * | 2007-07-27 | 2009-01-29 | Paul Hoffman | Vapor chamber structure with improved wick and method for manufacturing the same |
| CN101995183A (en) * | 2009-08-19 | 2011-03-30 | 富准精密工业(深圳)有限公司 | Flat heat pipe |
| CN201903277U (en) * | 2010-11-16 | 2011-07-20 | 深圳东桥华瀚科技有限公司 | Vapor Chamber and LED (light emitting diode) module |
| CN102595861A (en) * | 2012-03-12 | 2012-07-18 | 华南理工大学 | Vapor chamber having support posts with inner-sintering structure |
| CN107621184A (en) * | 2017-08-29 | 2018-01-23 | 苏州天脉导热科技有限公司 | Superconduction soaking plate |
| CN107764116A (en) * | 2017-10-16 | 2018-03-06 | 华南理工大学 | Ultrathin flexible soaking plate and its manufacture method |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113437034A (en) * | 2021-08-25 | 2021-09-24 | 中兴通讯股份有限公司 | Temperature equalization plate and electronic equipment |
| WO2023024498A1 (en) * | 2021-08-25 | 2023-03-02 | 中兴通讯股份有限公司 | Vapor chamber and electronic device |
| CN114199057A (en) * | 2021-12-23 | 2022-03-18 | 特能(厦门)超导科技有限公司 | Temperature-uniforming plate device and production method thereof |
| WO2024051332A1 (en) * | 2022-09-09 | 2024-03-14 | 华为技术有限公司 | Vapor chamber, electronic device and chip packaging structure |
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