CN112786477A - Wafer cleaning device, system and method - Google Patents
Wafer cleaning device, system and method Download PDFInfo
- Publication number
- CN112786477A CN112786477A CN201911087056.4A CN201911087056A CN112786477A CN 112786477 A CN112786477 A CN 112786477A CN 201911087056 A CN201911087056 A CN 201911087056A CN 112786477 A CN112786477 A CN 112786477A
- Authority
- CN
- China
- Prior art keywords
- wafer
- cleaning
- deionized water
- sprayer
- spraying
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to a wafer cleaning device, a wafer cleaning system and a wafer cleaning method, which can optimize the effect of removing particles on the back of a wafer and improve the yield of wafer production. The wafer cleaning device comprises a cleaning brush and a sprayer, wherein the cleaning brush is used for cleaning impurities on the back of a wafer to be cleaned, the sprayer can spray cleaning liquid towards the wafer, and the cleaning liquid is conductive and can release charges on the back of the wafer.
Description
Technical Field
The invention relates to the field of wafer cleaning, in particular to a wafer cleaning device, a wafer cleaning system and a wafer cleaning method.
Background
In the production and manufacturing process of wafer cleaning, due to the fact that van der waals force and electrostatic force can adsorb a large amount of particles, metal ions, organic matters and the like on the back of a wafer in various complex manufacturing processes, defects on the back of the wafer are caused, and the quality and the yield of the wafer are seriously affected.
However, in the prior art, the cleaning effect is not good when the BST (Backside surface treatment) technology is used to remove particles on the back surface of the wafer, and the particles still remain on the back surface, which affects the subsequent production and processing of the wafer and the yield of the wafer production.
Disclosure of Invention
The invention aims to provide a wafer cleaning device, a wafer cleaning system and a wafer cleaning method, which can optimize the effect of removing particles on the back surface of a wafer and improve the yield of wafer production.
In order to solve the above technical problem, a wafer cleaning apparatus is provided, which includes a cleaning brush for cleaning impurities on a back surface of a wafer to be cleaned, and a sprayer capable of spraying a cleaning solution toward the wafer, wherein the cleaning solution has conductivity and is capable of releasing negative charges on the back surface of the wafer.
Optionally, the sprayer includes at least two nozzles, both of which are disposed toward the wafer, and at least one cleaning solution nozzle is included in the nozzles for spraying a cleaning solution having conductivity.
Optionally, the nozzles further include at least one deionized water nozzle for spraying deionized water, and all the nozzles are disposed toward the back surface of the wafer.
Optionally, the cleaning solution sprayed by the cleaning solution nozzle includes a carbonic acid solution.
Optionally, the system further comprises a control valve, which is arranged on the liquid path of the sprayer and used for controlling the on-off of the liquid path of the sprayer.
Optionally, the system further comprises a flow meter and a controller, wherein the flow meter is arranged on a liquid path of the sprayer and used for metering the spraying amount of the sprayer; the controller is connected with the flow meter and the control valve and controls the on-off of the control valve according to the measurement result of the flow meter.
In order to solve the technical problem, a wafer cleaning system is further provided below, which includes the wafer cleaning apparatus as described above, and a cleaning liquid source, the cleaning liquid source is used for providing a cleaning liquid to be sprayed, and the cleaning liquid source is communicated to the sprayer.
Optionally, the sprayer comprises at least one deionized water nozzle and at least one cleaning solution nozzle, wherein the cleaning solution nozzle is communicated with the cleaning solution source; the wafer cleaning system further comprises a deionized water source used for providing deionized water to be sprayed, and the deionized water source is communicated to the deionized water nozzle.
In order to solve the above technical problem, the following further provides a wafer cleaning method, including the steps of: and spraying conductive cleaning solution to the back of the wafer to be cleaned.
Optionally, the method further comprises the following steps: and acquiring the sprayed spraying amount of the cleaning liquid, and adjusting the subsequent spraying amount according to the sprayed spraying amount.
Optionally, the method further comprises the following steps: before spraying conductive cleaning solution on the back of a wafer to be cleaned, brushing the back of the wafer by using a cleaning brush, and flushing the back of the wafer by using deionized water; after spraying conductive cleaning solution to the back of the wafer to be cleaned, spraying deionized water to the back of the wafer.
The wafer cleaning device, the wafer cleaning system and the wafer cleaning method can spray conductive cleaning solution towards the back of the wafer, release charges on the back of the wafer and reduce an electrostatic field generated due to the existence of the charges on the back of the wafer, so that the adsorption effect of the back of the wafer on particles is reduced, the effect of removing the particles on the back of the wafer is optimized, and the yield of wafer production is improved.
Drawings
Fig. 1 is a schematic perspective view of a wafer cleaning apparatus according to an embodiment of the present invention.
FIG. 2 is a side view of a wafer cleaning apparatus according to an embodiment of the invention.
FIG. 3 is a side view of a wafer cleaning apparatus according to an embodiment of the invention.
FIG. 4 is a schematic diagram of the charge on the backside of the wafer according to one embodiment of the present invention.
FIG. 5 is a schematic diagram illustrating a process of discharging charges on the backside of a wafer according to an embodiment of the present invention.
Fig. 6 is a schematic view of the connection of the spray nozzle and the spray pipe according to an embodiment of the present invention.
Detailed Description
Research finds that the reason why the cleaning effect is not good when BST is used to remove the particles on the back surface of the wafer is that (1) when the brush brushes the back surface of the wafer, due to friction, charges are transferred between the back surface of the wafer and the brush, and the back surface of the wafer continuously accumulates electrostatic charges, so as to enhance the attraction of the back surface of the wafer to the particles, where please refer to fig. 4, which is a schematic diagram of the charges on the back surface of the wafer in an embodiment of the present invention; (2) the conductivity of the di water is low and the rinsing of the di water is not conducive to the discharge of static charges, making it difficult to release the attraction of particles to the backside of the wafer.
The following detailed description of the embodiments of the invention will be made with reference to the accompanying drawings.
Referring to fig. 1 and 2, fig. 1 is a schematic perspective view illustrating a wafer cleaning apparatus according to an embodiment of the present invention; FIG. 2 is a side view of a wafer cleaning apparatus according to an embodiment of the invention.
In this embodiment, a wafer cleaning apparatus is provided, which includes a cleaning brush 102 for cleaning impurities on the back surface of a wafer 100 to be cleaned, and a sprayer 101 capable of spraying a cleaning solution toward the wafer 100, the cleaning solution having conductivity capable of discharging charges on the back surface of the wafer 100.
In this embodiment, the wafer cleaning apparatus has a sprayer 101 capable of spraying a conductive cleaning solution toward the back surface of the wafer 100, so as to release the charge on the back surface of the wafer 100, and reduce an electrostatic field generated by the presence of the charge on the back surface of the wafer 100, so as to reduce the adsorption of particles on the back surface of the wafer 100, and reference is made to fig. 5, which is a schematic diagram of the time when the charge on the back surface of the wafer 100 is released in an embodiment of the present invention.
In one embodiment, the cleaning brush 102 is disposed on the back side of the wafer 100 for cleaning the back side of the wafer 100. Reference is made here to fig. 1 and 2. In the embodiment shown in fig. 1 and 2, the cleaning brush 102 has two brush heads 1021 for contacting with the wafer 100, and in practice, the number of the brush heads 1021 may be set as required, for example, three or more. When a plurality of brush heads 1021 are provided, the brush heads 1021 of the cleaning brushes 102 are all disposed toward the wafer 100 and are uniformly disposed on the same plane. In one embodiment, the plane of the brush head 1021 of each cleaning brush 102 is parallel to the location where the wafer 100 is placed, such that the force of each brush head 1021 scrubbing the wafer 100 is uniform.
In one embodiment, the sprayer 101 includes at least two nozzles, each of which is disposed toward the wafer 100, and at least one cleaning solution nozzle 1012 for spraying a cleaning solution having conductivity. The conductive cleaning solution refers to a solution having freely movable ions, including positive ions, negative ions, and the like. The releasing of the charges on the back surface of the wafer 100 refers to the positive ions and the negative ions that can automatically move in the solution, and can neutralize the negative ions and the positive ions on the back surface of the wafer 100, thereby eliminating the charges on the back surface of the wafer 100 and releasing the attraction of the back surface of the wafer 100 to particles.
In the embodiment shown in fig. 1 to 3, all the nozzles are disposed toward the back surface of the wafer 100. This is because the brush head 1021 of the cleaning brush 102 is disposed toward the back side of the wafer 100, and the back side of the wafer 100 also accumulates a lot of charges due to the friction with the brush head 1021. The nozzle is arranged towards the back of the wafer 100, so that charges on the back of the wafer 100 can be rapidly removed, and the attraction of the back of the wafer 100 to particles is weakened.
As shown in fig. 2, the sprayer 101 includes one cleaning liquid nozzle 1012, and as shown in fig. 3, the sprayer 101 includes two cleaning liquid nozzles 1012. In practice, the number of the cleaning liquid nozzles 1012 may be set as desired. When a plurality of cleaning solution nozzles 1012 are provided, the cleaning solution nozzles 1012 are uniformly distributed on a first plane parallel to a placement position where the wafer 100 is placed, so as to uniformly spray the wafer 100. In fact, the specific position of the cleaning solution nozzle 1012 can be set as required.
The provision of the plurality of cleaning solution nozzles 1012 can increase the speed of releasing the back charges of the wafer 100, thereby improving the cleaning efficiency of the wafer 100.
In one embodiment, the nozzle further comprises at least one deionized water nozzle 1011 for spraying deionized water.
In fig. 2, the number of the deionized water nozzles 1011 is 1, and in fig. 3, the number of the deionized water nozzles 1011 is 2. In fact, the number of the deionized water nozzles 1011 may be set as desired. When a plurality of deionized water nozzles 1011 are provided, the plurality of deionized water nozzles 1011 are uniformly distributed on a second plane parallel to the placing position where the wafer 100 is placed, so as to uniformly spray the wafer 100. In a particular embodiment, the first plane coincides with the second plane.
In fact, the specific position of the deionized water nozzle 1011 may be set as desired.
In one embodiment, the cleaning solution sprayed by the cleaning solution nozzle 1012 includes a carbonic acid solution, which is generated by the reaction of water and carbon dioxide injected into the water. In practice, other weak acid solutions such as acetic acid, hydrofluoric acid, etc. may also be used. It should be noted that whatever weak acid solution is used, the wafer 100 after being sprayed needs to be cleaned, so as to prevent the cleaning solution on the wafer 100 from affecting the subsequent processing production of the wafer 100.
In one embodiment, as shown in fig. 6, the wafer cleaning apparatus further includes a control valve 601 disposed on the liquid path of the sprayer 101 for controlling the liquid path of the sprayer 101 to be opened or closed. In this embodiment, the control valve 601 is provided to a spray line 105 communicating with each nozzle, each nozzle communicating with a spray line 105, and the liquid to be sprayed is transported to the nozzle via the spray line 105. In this embodiment, the control valve 601 is disposed on the spraying liquid path, so that the spraying conditions of all the nozzles can be effectively controlled: when the control valve 601 is turned off, the spray nozzle stops spraying; when the control valve 601 is opened, the spray nozzle starts spraying.
In some embodiments, the control valve 601 may be partially opened, and the spray line 105 may be partially opened, so that a portion of the liquid may flow through the control valve 601 to the nozzle to be sprayed. In this case, the flow rate of the liquid discharged from the nozzle may be controlled by the control valve 601.
Fig. 6 is a schematic diagram illustrating the connection between the spray nozzle and the spray pipe 105 according to an embodiment of the present invention.
In this embodiment, the wafer cleaning apparatus further includes a flow meter 602 and a controller, wherein the flow meter 602 is disposed on a liquid path of the sprayer 101 and is used for measuring a spraying amount of the sprayer 101; the controller is connected with the flow meter 602 and the control valve 601, and controls the on-off of the control valve 601 according to the measurement result of the flow meter 602.
In this embodiment, the flow meter 602 is also provided to the shower line 105. In this embodiment, the flow meter 602 is disposed on the spraying pipe 105 to which each nozzle is connected, and the controller may acquire the liquid flow rate in the spraying pipe 105 to which each nozzle is connected, and control the control valve 601 according to the liquid flow rate to respectively regulate and control the spraying conditions of all the nozzles.
In this specific embodiment, because the control valve 601, the flow meter 602 and the controller are provided, and the control valve 601, the flow meter 602 and the controller form a closed loop, the controller can control the on-off condition of the control valve 601 according to the detection structure of the flow meter 602, so that the obtained control result is more accurate, and the spraying effect can be optimized.
In this embodiment, a wafer cleaning system is further provided, which includes the wafer cleaning apparatus as described above, and a cleaning liquid source 103, wherein the cleaning liquid source 103 is used for providing a cleaning liquid to be sprayed, and the cleaning liquid source 103 is connected to the sprayer 101.
In this embodiment, the wafer cleaning system includes a wafer cleaning apparatus having a sprayer 101 capable of spraying a conductive cleaning solution toward the back surface of the wafer 100, thereby releasing the charge on the back surface of the wafer 100, reducing an electrostatic field generated by the charge on the back surface of the wafer 100, and reducing the adsorption of particles on the back surface of the wafer 100.
In one embodiment, the sprayer 101 comprises at least one deionized water nozzle 1011 and at least one cleaning solution nozzle 1012, wherein the cleaning solution nozzle 1012 is in communication with the cleaning solution source 103; the wafer cleaning system further includes a deionized water source 104 for providing deionized water to be sprayed, and the deionized water source 104 is connected to the deionized water nozzle 1011.
In one embodiment, all of the nozzles are disposed toward the back side of the wafer 100. This is because the brush head 1021 of the cleaning brush 102 is disposed toward the back side of the wafer 100, and the back side of the wafer 100 also accumulates a lot of charges due to the friction with the brush head 1021. The nozzle is arranged towards the back of the wafer 100, so that charges on the back of the wafer 100 can be rapidly removed, and the attraction of the back of the wafer 100 to particles is weakened.
As shown in fig. 2, the sprayer 101 includes one cleaning liquid nozzle 1012, and as shown in fig. 3, the sprayer 101 includes two cleaning liquid nozzles 1012. In practice, the number of the cleaning liquid nozzles 1012 may be set as desired. When a plurality of cleaning solution nozzles 1012 are provided, the cleaning solution nozzles 1012 are uniformly distributed on a first plane parallel to a placement position where the wafer 100 is placed, so as to uniformly spray the wafer 100. In fact, the specific position of the cleaning solution nozzle 1012 can be set as required.
The provision of the plurality of cleaning solution nozzles 1012 can increase the speed of releasing the back charges of the wafer 100, thereby improving the cleaning efficiency of the wafer 100.
The deionized water nozzle 1011 is arranged to spray deionized water, so that cleaning liquid stained on the back surface of the wafer 100 can be cleaned, the cleaning liquid on the back surface of the wafer 100 can be flushed away while charges on the back surface of the wafer 100 are removed, and the cleaning liquid is prevented from interfering with subsequent processing production of the wafer 100.
In fig. 2, the number of the deionized water nozzles 1011 is 1, and in fig. 3, the number of the deionized water nozzles 1011 is 2. In fact, the number of the deionized water nozzles 1011 may be set as desired. When a plurality of deionized water nozzles 1011 are provided, the plurality of deionized water nozzles 1011 are uniformly distributed on a second plane parallel to the placing position where the wafer 100 is placed, so as to uniformly spray the wafer 100. In a particular embodiment, the first plane coincides with the second plane.
In fact, the specific position of the deionized water nozzle 1011 may be set as desired.
In one embodiment, the cleaning solution source 103 comprises a carbon acid source, and in fact, the cleaning solution source 103 may be other weak acid sources, such as an acetic acid source, a hydrofluoric acid source, etc., where a weak acid is used because a strong acid may have a corrosive effect on the backside of the wafer 100.
In this embodiment, there is also provided a wafer cleaning method, comprising the steps of: a conductive cleaning solution is sprayed to the back surface of the wafer 100 to be cleaned.
In this embodiment, the wafer cleaning method sprays the conductive cleaning solution toward the back surface of the wafer 100, so as to release the charges on the back surface of the wafer 100, reduce the electrostatic field generated by the charges on the back surface of the wafer 100, and reduce the adsorption of particles on the back surface of the wafer 100.
In one embodiment, a conductive cleaning solution is sprayed onto the back surface of the wafer 100 to be cleaned, and the cleaning solution includes a carbonic acid solution.
In fact, in other embodiments, other weak acid solutions, such as acetic acid, hydrofluoric acid, etc., may be used as the cleaning solution. It should be noted that whatever weak acid solution is used, the wafer 100 after being sprayed needs to be cleaned, so as to prevent the cleaning solution on the wafer 100 from affecting the subsequent processing production of the wafer 100.
In one embodiment, the method further comprises the following steps: and acquiring the sprayed spraying amount of the cleaning liquid, and adjusting the subsequent spraying amount according to the sprayed spraying amount. In this embodiment, this may be accomplished by adding a control valve 601 and flow meter 602 to the cleaning solution spray line 105. Specifically, a control valve 601 and a flow meter 602 are added to the cleaning liquid spraying pipeline 105, the control valve 601 and the flow meter 602 are connected to a controller, and the controller controls the on-off state of the control valve 601 according to the detection result of the flow meter 602, so as to control the spraying amount of the cleaning liquid.
In this specific embodiment, because the control valve 601, the flow meter 602 and the controller are provided, and the control valve 601, the flow meter 602 and the controller form a closed loop, the controller can control the on-off condition of the control valve 601 according to the detection structure of the flow meter 602, so that the obtained control result is more accurate, and the spraying effect can be optimized.
In one embodiment, the method further comprises the following steps: before spraying conductive cleaning liquid on the back surface of a wafer 100 to be cleaned, brushing the back surface of the wafer 100 by using a cleaning brush 102, and flushing the back surface of the wafer 100 by using deionized water; after spraying conductive cleaning solution on the back surface of the wafer 100 to be cleaned, spraying deionized water on the back surface of the wafer 100. This is because the wafer 100 sprayed with the cleaning solution needs to be cleaned with deionized water, so as to prevent the cleaning solution on the wafer 100 from affecting subsequent processing of the wafer 100.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (11)
1. A wafer cleaning device comprises a cleaning brush used for cleaning impurities on the back of a wafer to be cleaned, and is characterized by further comprising a sprayer which can spray cleaning liquid towards the wafer, wherein the cleaning liquid is conductive and can release charges on the back of the wafer.
2. The wafer cleaning apparatus as claimed in claim 1, wherein the sprayer includes at least two nozzles each disposed toward the wafer, and at least one of the nozzles includes a cleaning solution nozzle for spraying a cleaning solution having conductivity.
3. The wafer cleaning apparatus as claimed in claim 2, wherein the nozzles further comprise at least one deionized water nozzle for spraying deionized water, and all of the nozzles are disposed toward the back surface of the wafer.
4. The wafer cleaning apparatus as claimed in claim 2, wherein the cleaning solution sprayed by the cleaning solution nozzle comprises a carbonic acid solution.
5. The wafer cleaning device as claimed in claim 1, further comprising a control valve disposed on a liquid path of the sprayer for controlling the liquid path of the sprayer to be turned on or off.
6. The wafer cleaning device as claimed in claim 5, further comprising a flow meter and a controller, wherein the flow meter is arranged on a liquid path of the sprayer and used for metering the spraying amount of the sprayer; the controller is connected with the flow meter and the control valve and controls the on-off of the control valve according to the measurement result of the flow meter.
7. A wafer cleaning system comprising the wafer cleaning apparatus as claimed in any one of claims 1 to 6, and a cleaning liquid source for providing a cleaning liquid to be sprayed, the cleaning liquid source being connected to the sprayer.
8. The wafer cleaning system of claim 7, wherein the sprayer comprises at least one deionized water nozzle and at least one rinse liquid nozzle, wherein the rinse liquid nozzle is in communication with the rinse liquid source;
the wafer cleaning system further comprises a deionized water source used for providing deionized water to be sprayed, and the deionized water source is communicated to the deionized water nozzle.
9. A method of cleaning a wafer, comprising the steps of:
and spraying conductive cleaning solution to the back of the wafer to be cleaned.
10. The wafer cleaning method as claimed in claim 9, further comprising the steps of:
and acquiring the sprayed spraying amount of the cleaning liquid, and adjusting the subsequent spraying amount according to the sprayed spraying amount.
11. The wafer cleaning method as claimed in claim 9, further comprising the steps of:
before spraying conductive cleaning solution on the back of a wafer to be cleaned, brushing the back of the wafer by using a cleaning brush, and flushing the back of the wafer by using deionized water;
after spraying conductive cleaning solution to the back of the wafer to be cleaned, spraying deionized water to the back of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911087056.4A CN112786477A (en) | 2019-11-08 | 2019-11-08 | Wafer cleaning device, system and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911087056.4A CN112786477A (en) | 2019-11-08 | 2019-11-08 | Wafer cleaning device, system and method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112786477A true CN112786477A (en) | 2021-05-11 |
Family
ID=75748426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911087056.4A Pending CN112786477A (en) | 2019-11-08 | 2019-11-08 | Wafer cleaning device, system and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112786477A (en) |
-
2019
- 2019-11-08 CN CN201911087056.4A patent/CN112786477A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5723019A (en) | Drip chemical delivery method and apparatus | |
| CN104183524A (en) | Wafer edge etching device | |
| TW200700812A (en) | Coating apparatus and operating method thereof | |
| CN105321852A (en) | Method and apparatus for liquid treatment of wafer shaped articles | |
| CN202174489U (en) | Wafer cleaning device and chemical mechanical lapping device | |
| CN203955646U (en) | Wafer cleaning device | |
| KR20140148330A (en) | Liquid processing apparatus and liquid processing method | |
| CN210607200U (en) | Wafer cleaning device and wafer cleaning system | |
| CN112786477A (en) | Wafer cleaning device, system and method | |
| KR20150003429A (en) | Chamber structure of substrate cleaning apparatus | |
| US6360756B1 (en) | Wafer rinse tank for metal etching and method for using | |
| CN201017856Y (en) | Ejection apparatus | |
| CN102437021A (en) | Cleaning method in chemical mechanical polishing | |
| JP2005019991A (en) | Substrate processing apparatus | |
| US7926494B2 (en) | Bernoulli blade | |
| CN104716072A (en) | Array substrate stripping system and method | |
| JPH01140727A (en) | Cleaning of substrate | |
| CN103286086A (en) | Wafer cleaning method and device | |
| KR20040058839A (en) | Apparatus for wet-etching | |
| CN206160684U (en) | Drying device of base plate | |
| CN211045383U (en) | Glass substrate manufacturing device | |
| JP2005159191A (en) | Substrate cleaning device | |
| KR20080057088A (en) | Wet cleaning equipmemt of wafer and wet cleaning method of the same | |
| US20030221712A1 (en) | Shower tubing for PRS wet bench | |
| CN109177491B (en) | Cleaning device and cleaning method for vertical spray resin plate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |