CN112786426A - Gas supply method and substrate processing apparatus - Google Patents

Gas supply method and substrate processing apparatus Download PDF

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Publication number
CN112786426A
CN112786426A CN202011178178.7A CN202011178178A CN112786426A CN 112786426 A CN112786426 A CN 112786426A CN 202011178178 A CN202011178178 A CN 202011178178A CN 112786426 A CN112786426 A CN 112786426A
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Prior art keywords
gas
flow rate
control device
gas supply
valve
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Granted
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CN202011178178.7A
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CN112786426B (en
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赤池宗明
川手学
相泽高志
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D7/00—Control of flow
    • G05D7/06—Control of flow characterised by the use of electric means
    • G05D7/0617—Control of flow characterised by the use of electric means specially adapted for fluid materials
    • G05D7/0629—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means
    • G05D7/0635—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means
    • G05D7/0641—Control of flow characterised by the use of electric means specially adapted for fluid materials characterised by the type of regulator means by action on throttling means using a plurality of throttling means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The invention provides a gas supply method and a substrate processing apparatus. The gas supply method comprises: closing the second valve and opening the first valve to supply gas to a gas supply pipe, a branch pipe and a gas split ratio control unit which are located on the secondary side of the gas flow rate control device when a substrate is to be processed; detecting whether or not the pressure of a gas supply pipe or a branch pipe on the secondary side of the gas flow rate control device reaches a set pressure by a pressure sensor; a step of closing the first valve; and opening the first valve and the second valve to supply gas to the processing container. According to the present invention, it is possible to supply the gas stably for a short time when the gas after the diversion is supplied to the processing chamber while facilitating the diversion of the gas to the plurality of branch pipes in accordance with the diversion ratio.

Description

Gas supply method and substrate processing apparatus
Technical Field
The invention relates to a gas supply method and a substrate processing apparatus.
Background
Patent document 1 discloses a gas supply method and a substrate processing apparatus, which execute pressure ratio control for adjusting a split flow rate so that a pressure ratio in each process gas branch flow path becomes a target pressure ratio by a split flow rate adjustment unit, and which split a process gas from the process gas supply unit to a plurality of branch pipes. In this gas supply method, when the pressure in each of the process gas branch flow paths is stabilized, the control performed by the partial flow rate adjustment means is switched to the pressure-holding control for adjusting the partial flow rate so as to maintain the pressure in one of the process gas branch flow paths at the time of stabilizing the pressure, and the additional gas is supplied to the other process gas branch pipe by the additional gas supply means.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2007-207808.
Disclosure of Invention
Technical problem to be solved by the invention
The invention provides a gas supply method and a substrate processing apparatus which are advantageous for distributing gas to a plurality of branch pipes according to a distribution ratio and stably supplying gas in a short time when the distributed gas is supplied to a processing container.
Means for solving the problems
A gas supply method according to an aspect of the present invention is a gas supply method performed by a gas supply apparatus for supplying a gas to a process container for processing a substrate, the gas supply apparatus including: at least one gas flow rate control device provided in a gas supply pipe communicating from a gas supply unit to the processing chamber; a gas flow ratio control unit including two or more gas flow ratio control means provided in two or more branch pipes branching off from the secondary side of the gas flow rate control device, respectively, and having a variable conductance flow path in which conductance can be changed; a first valve and a pressure sensor which are located on a secondary side of the gas flow rate control device and on a primary side of the gas split ratio control unit; and a second valve located on a secondary side of the gas split ratio control unit, the gas supply method including: a step of closing the second valve and opening the first valve to supply the gas to the gas supply pipe, the branch pipe, and the gas split ratio control unit located on the secondary side of the gas flow rate control device when the substrate is to be processed; detecting whether or not the pressure of the gas supply pipe or the branch pipe on the secondary side of the gas flow rate control device reaches a set pressure by the pressure sensor; a step of closing the first valve; and a step of opening the first valve and the second valve to supply the gas to the processing container.
Effects of the invention
According to the present invention, it is possible to provide a gas supply method and a substrate processing apparatus which are advantageous in that a gas is branched to a plurality of branch pipes according to a branching ratio and the gas is stably supplied in a short time when the branched gas is supplied to a processing container.
Drawings
Fig. 1 is a longitudinal sectional view showing an example of a substrate processing apparatus according to embodiment 1.
Fig. 2 is a diagram illustrating control of the gas supply device, and is a diagram showing a time chart of the MFC flow rate and the FRC flow rate.
FIG. 3 is a longitudinal sectional view showing an example of a substrate processing apparatus according to embodiment 2.
Description of reference numerals
20: processing container
60. 60A: gas supply device
61. 61A, 61B: gas supply unit
62. 62A, 62B: gas flow control device
63. 63A, 63B: first valve
66: gas split ratio control section
66A to 66H: gas split ratio control unit
67. 67A to 67H: second valve
68. 68A, 68B: gas supply pipe
69. 69A, 69B: branch piping
G: substrate
Detailed Description
Hereinafter, a gas supply method and a substrate processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the present specification and the drawings, substantially the same components are denoted by the same reference numerals, and redundant description is omitted.
[ substrate processing apparatus and gas supply method of embodiment 1 ]
First, an example of a substrate processing apparatus and a gas supply method according to embodiment 1 of the present invention will be described with reference to fig. 1 and 2. Here, fig. 1 is a longitudinal sectional view showing an example of a substrate processing apparatus according to embodiment 1. Fig. 2 is a diagram for explaining the control of the gas supply device, and is a diagram showing a time chart of the MFC flow rate and the FRC flow rate.
The substrate processing apparatus 100 shown in fig. 1 is an Inductively Coupled Plasma (ICP) processing apparatus that performs various substrate processing methods on a substrate G (hereinafter, simply referred to as a "substrate") having a rectangular shape in a plan view for a Flat Panel Display (FPD). Glass is mainly used as a material of the substrate G, but a transparent synthetic resin or the like can be used according to the application. Here, the substrate processing includes etching processing, film formation processing using a CVD (Chemical Vapor Deposition) method, and the like. Examples of FPDs include Liquid Crystal Displays (LCDs), electroluminescence displays (ELs), Plasma Display Panels (PDPs), and the like. The substrate G also includes a support substrate, in addition to the manner in which the circuit is patterned on its surface. The planar size of the FPD substrate is scaled up with the passage of each generation, and the planar size of the substrate G processed by the substrate processing apparatus 100 includes, for example, at least a size of about 1500mm × 1800mm of the 6 th generation to a size of about 3000mm × 3400mm of the 10.5 th generation. In addition, the thickness of the substrate G is on the order of 0.2mm to several mm.
The substrate processing apparatus 100 shown in fig. 1 includes a rectangular box-shaped processing container 20, a substrate stage 70 having a rectangular outer shape in plan view on which a substrate G can be placed and disposed in the processing container 20, and a control unit 90. In this embodiment, the substrate mounting table is also formed in a circular or elliptical shape, and the substrate placed on the substrate mounting table is also formed in a circular shape or the like.
The processing container 20 is partitioned into two spaces, i.e., an upper space and a lower space by the metal window 50, and the antenna chamber a as the upper space is formed by the upper chamber 13 and the processing region S (processing chamber) as the lower space is formed by the lower chamber 17. In the processing container 20, a rectangular ring-shaped support frame 14 is disposed so as to protrude toward the inside of the processing container 20 at a position that becomes a boundary between the upper chamber 13 and the lower chamber 17, and a metal window 50 is attached to the support frame 14.
The upper chamber 13 forming the antenna chamber a is formed by the side wall 11 and the ceiling 12, and the whole is formed of metal such as aluminum or aluminum alloy.
The lower chamber 17 having the processing region S therein is formed by the side walls 15 and the bottom plate 16, and is entirely formed of metal such as aluminum, aluminum alloy, or the like. In addition, the side wall 15 is grounded via a ground line 21.
The support frame 14 is made of a metal such as conductive aluminum or aluminum alloy, and can be referred to as a metal frame.
A rectangular ring-shaped (endless) seal groove 22 is formed at the upper end of the side wall 15 of the lower chamber 17, a seal member 23 such as an O-ring is fitted into the seal groove 22, and the contact surface of the support frame 14 holds the seal member 23, thereby forming a seal structure of the lower chamber 17 and the support frame 14.
A carry-in/out port 18 for carrying in/out the substrate G to/from the lower chamber 17 is opened in the side wall 15 of the lower chamber 17, and the carry-in/out port 18 is configured to be openable and closable by a gate valve 24. The lower chamber 17 is adjacent to a transfer chamber (both not shown) having a transfer mechanism therein, and controls opening and closing of the gate valve 24, so that the substrate G is transferred and carried out by the transfer mechanism through the transfer port 18.
Further, a plurality of exhaust ports 19 are opened in the bottom plate 16 of the lower chamber 17, each exhaust port 19 is connected to a gas exhaust pipe 25, and the gas exhaust pipe 25 is connected to an exhaust device 27 via an on-off valve 26. The gas exhaust pipe 25, the opening/closing valve 26, and the exhaust device 27 form a gas exhaust unit 28. The exhaust unit 27 has a vacuum pump such as a turbo molecular pump, and is configured to be able to evacuate the lower chamber 17 to a predetermined degree of vacuum during the process. A pressure gauge (not shown) is provided at an appropriate position of the lower chamber 17, and monitoring information of the pressure gauge is transmitted to the control unit 90.
The substrate stage 70 includes a base material 73 and an electrostatic chuck 76 formed on an upper surface 73a of the base material 73.
The base material 73 is formed by a laminate of an upper base material 71 and a lower base material 72. The upper base member 71 has a rectangular shape in plan view and has a planar size approximately equal to that of the FPD mounted on the substrate stage 70. For example, the upper base 71 has a planar size of about 1800mm to 3400mm in length of the long side and a size of about 1500mm to 3000mm in length of the short side. For this planar size, the sum of the thicknesses of the upper substrate 71 and the lower substrate 72 is, for example, on the order of 50mm to 100 mm.
The lower base 72 is provided with a temperature control medium flow path 72a which meanders so as to cover the entire area of the rectangular plane and is formed of stainless steel, aluminum, an aluminum alloy, or the like. On the other hand, the upper base 71 is also made of stainless steel, aluminum alloy, or the like. The temperature adjusting medium channel 72a may be provided on the upper base 71 and/or the electrostatic chuck 76, for example. The base material 73 may be formed of one member such as aluminum or an aluminum alloy, instead of being a laminate of two members as in the illustrated example.
A box-shaped susceptor 78 formed of an insulating material and having a stepped portion on the inside is fixed to the bottom plate 16 of the lower chamber 17, and the substrate stage 70 is mounted on the stepped portion of the susceptor 78.
An electrostatic chuck 76 for directly mounting the substrate G is formed on the upper surface of the upper base 71. The electrostatic chuck 76 includes a ceramic layer 74 which is a dielectric coating formed by thermally spraying a ceramic such as alumina, and a conductive layer 75 (electrode) having an electrostatic adsorption function embedded in the ceramic layer 74.
The conductive layer 75 is connected to a dc power supply 85 via a power supply line 84. When a switch (not shown) provided in the power supply line 84 is turned on by the control unit 90, a dc voltage is applied from the dc power supply 85 to the conductive layer 75, thereby generating coulomb force. The substrate G is electrostatically attracted to the upper surface of the electrostatic chuck 76 by the coulomb force, and is held in a state of being placed on the upper surface of the upper base 71.
A temperature control medium flow path 72a that meanders so as to cover the entire area of the rectangular plane is provided in the lower base material 72 constituting the substrate mounting table 70. A delivery pipe 72b for supplying the temperature control medium to the temperature control medium flow path 72a and a return pipe 72c for discharging the temperature control medium whose temperature has been increased by flowing through the temperature control medium flow path 72a are connected to both ends of the temperature control medium flow path 72 a.
As shown in fig. 1, the delivery pipe 72b and the return pipe 72c are respectively communicated with a delivery flow path 87 and a return flow path 88, and the delivery flow path 87 and the return flow path 88 are communicated with the cooler 86. The cooler 86 includes a main body that controls the temperature and/or the discharge flow rate of the temperature adjusting medium, and a pump (both not shown) that pumps the temperature adjusting medium. As the temperature adjusting medium, a refrigerant may be suitably used, and this refrigerant may be Galden (registered trademark), Fluorinert (registered trademark), or the like. The conveyance channel 87, the return channel 88, and the cooler 86 constitute a temperature control device 89. The temperature adjustment method illustrated in the figure is a method in which the temperature adjustment medium is circulated through the lower base material 72, but a method in which a heater or the like is built in the lower base material 72 and temperature adjustment is performed by the heater may be used, or a method in which temperature adjustment is performed by both the temperature adjustment medium and the heater. Further, instead of the heater, temperature adjustment may be performed by heating by flowing a high-temperature adjustment medium. The heater as the resistor is made of tungsten, molybdenum, or a compound of any of these metals with alumina, titanium, or the like. In the illustrated example, the temperature adjusting medium flow path 72a is formed in the lower base 72, but the electrostatic chuck 76 may have a temperature adjusting medium flow path, for example.
A temperature sensor such as a thermocouple is disposed on the upper base 71, and monitoring information of the temperature sensor is transmitted to the control unit 90 in real time. Then, based on the transmitted monitoring information, the control section 90 performs temperature adjustment control of the upper base 71 and the substrate G. More specifically, the temperature and/or the flow rate of the temperature-adjusting medium supplied from the cooler 86 to the conveyance passage 87 are adjusted by the control unit 90. Then, the temperature adjustment control of the substrate stage 70 is executed by circulating the temperature adjustment medium subjected to the temperature adjustment and/or the flow rate adjustment through the temperature adjustment medium flow path 72 a. Further, a temperature sensor such as a thermocouple may be provided on the lower base material 72 and/or the electrostatic chuck 76, for example.
A stepped portion is formed by the outer periphery of the electrostatic chuck 76 and the upper substrate 71 and the upper surface of the rectangular member 78, and a rectangular frame-shaped focus ring 79 is placed on the stepped portion. In a state where the focus ring 79 is provided at the step portion, the upper surface of the focus ring 79 is set lower than the upper surface of the electrostatic chuck 76. The focus ring 79 is formed of ceramic such as alumina or quartz.
The lower surface of the lower base member 72 is connected to a power supply member 80. The lower end of the power feeding member 80 is connected to a power feeding line 81, and the power feeding line 81 is connected to a high frequency power supply 83 as a bias power supply via a matching box 82 for impedance matching. By applying a high-frequency electric power of, for example, 3.2MHz from the high-frequency power supply 83 to the substrate stage 80 to generate an RF bias voltage, ions generated by the high-frequency power supply 59 as a plasma generation source described below can be attracted to the substrate G. Therefore, in the plasma etching process, the etching rate and the etching selectivity can be improved together. In addition, a through hole (not shown) may be formed in the lower base 72, and the power supply member 80 may be connected to the lower surface of the upper base 81 by penetrating the through hole. Thus, the substrate stage 70 forms a bias electrode for placing the substrate G and generating an RF bias voltage. At this time, a portion at the ground potential inside the chamber functions as a counter electrode of the bias electrode, and constitutes a return circuit for the high-frequency electric power. The metal window 50 may be configured as a part of a return circuit for high-frequency electric power.
The metal window 50 is formed of a plurality of divided metal windows 57. The number of the divided metal windows 57 (4 in the cross-sectional direction in fig. 1) forming the metal window 50 can be set to a plurality of numbers such as 12, 24, and the like.
Each of the divided metal windows 57 is insulated from the support frame 14 and the adjacent divided metal windows 57 by an insulating member 56. Here, the insulating member 56 is formed of a fluororesin such as PTFE (Polytetrafluoroethylene).
The divided metal window 57 has a conductor plate 30 and a shower plate 40. The conductor plate 30 and the shower plate 40 are each formed of a non-magnetic, electrically conductive, and corrosion-resistant metal or a surface-processed metal having corrosion resistance, such as aluminum, an aluminum alloy, or stainless steel. The surface treatment having corrosion resistance may be, for example, anodic oxidation treatment, ceramic spraying, or the like. In addition, a plasma resistant coating may be applied by anodizing or ceramic spraying on the lower surface of the shower plate 40 opposite to the process region S. The conductor plate 30 is grounded via a ground line (not shown), and the shower plate 40 is also grounded via the conductor plates 30 joined to each other.
As shown in fig. 1, a spacer (not shown) made of an insulating material is disposed above each of the divided metal windows 57, and the high-frequency antenna 54 is disposed at a distance from the conductor plate 30 by the spacer. The high-frequency antenna 54 is formed by winding an antenna made of a metal having good conductivity such as copper in a ring shape or a spiral shape. For example, the loop antenna may be arranged in multiple.
The high-frequency antenna 54 is connected to a feeding member 57a extending above the upper chamber 13, the upper end of the feeding member 57a is connected to a feeding line 57b, and the feeding line 57b is connected to a high-frequency power supply 59 via a matching box 58 for impedance matching. High-frequency electric power of, for example, 13.56MHz is applied from the high-frequency power source 59 to the high-frequency antenna 54, thereby forming an induced electric field within the lower chamber 17. The processing gas supplied from the shower plate 40 into the processing region S is converted into plasma by the induced electric field to generate inductively coupled plasma, and ions in the plasma are supplied to the substrate G. Further, each of the divided metal windows 57 may have a unique high-frequency antenna, and control of applying high-frequency electric power individually to each of the high-frequency antennas can be performed.
The high-frequency power supply 59 is a plasma generation source, and the high-frequency power supply 83 connected to the substrate stage 70 is a bias source for attracting generated ions and imparting kinetic energy thereto. Accordingly, the ion generation source generates plasma by inductive coupling, and the bias source as another power source is connected to the substrate stage 70 to control the ion energy, so that the generation of plasma and the control of the ion energy can be performed independently, and the degree of freedom of the process can be improved. The frequency of the high-frequency electric power output from the high-frequency power source 59 is preferably set in the range of 0.1 to 500 MHz.
The metal window 50 is formed of a plurality of divided metal windows 57, and each of the divided metal windows 57 is suspended from the top plate 12 of the upper chamber 13 by a plurality of suspension rods (not shown). Since the high-frequency antenna 54 contributing to the generation of plasma is disposed on the upper surface of the divided metal window 57, the high-frequency antenna 54 is suspended from the top plate 12 via the divided metal window 57.
A gas diffusion groove 32 is formed in the lower surface of the conductive plate body 31 forming the conductive plate 30. In addition, the gas diffusion groove may be formed on the upper surface of the shower plate. The shape of the gas diffusion groove may be a concave shape formed in a planar shape, as well as a concave shape formed in a long shape.
The shower plate body 41 forming the shower plate 40 is provided with a plurality of gas discharge holes 42 penetrating the shower plate body 41 and communicating with the gas diffusion groove 32 of the conductor plate 30 and the processing region S.
A plurality of (four in the example shown in the figure) supply ports 12a are opened in the ceiling plate 12 of the upper chamber 13, and a unique gas introduction pipe 55 penetrates each of the divided metal windows 57 in an airtight manner for each of the supply ports 12 a. The gas introduction pipes 55 are in fluid communication with a branch pipe 69 constituting a gas supply device 60 described in detail below. In the illustrated example, for example, four branch pipes 69 are each in fluid communication with a unique gas introduction pipe 55, and the process gas is supplied from each of the four gas introduction pipes 55 to the four divided metal windows 57. In contrast, when the number of the divided metal windows 57 is three or less, or five or more, any two of the four gas introduction pipes 55 may be integrated into one, and the one divided metal window 57 may be in fluid communication therewith. The four gas introduction pipes 55 may be branched into a plurality in the antenna chamber a to be in fluid communication with five or more divided metal windows 57.
The gas supply device 60 includes: a gas supply section 61; a gas supply pipe 68 communicating with the gas supply unit 61; and four branch pipes 69 branched from the gas supply pipe 68 and communicating with the corresponding gas introduction pipes 55. As described below, various valves, sensors, and the like are provided in the gas supply pipe 68 and/or the branch pipe 69.
In the plasma processing, the processing gas supplied from the gas supply device 60 is supplied to the gas diffusion groove 32 of the conductive plate 30 included in each of the divided metal windows 57 through the gas introduction pipe 55. Then, the gas is discharged from each gas diffusion groove 32 to the processing region S through the gas discharge holes 42 of each shower plate 40.
A gas Flow rate control device 62 such as a Mass Flow Controller (MFC) is disposed on the downstream side of the gas supply unit 61 in the gas Flow. Further, on the secondary side of the gas flow rate control device 62 (the downstream side of the gas flow, the downstream side of the object is referred to as the secondary side, and the same applies hereinafter), a first valve 63 for blocking the gas flow to a gas supply pipe 68 located on the downstream side is disposed. Further, a third valve 65 is disposed on the secondary side of the first valve 63 and on the primary side of the branch pipe 69 (upstream side of the gas flow, and upstream side of the object is referred to as primary side hereinafter). The third valve 65 may not be provided.
A pressure sensor 64 such as a pressure switch is disposed in the gas supply pipe 68 between the first valve 63 and the third valve 65.
Gas Flow Ratio control means 66A, 66B, 66C, and 66D such as FRC (Flow Ratio controllers) are disposed in the four branch pipes 69, respectively. The gas split ratio control units 66A, 66B, 66C, and 66D each have a conductance variable flow path (not shown) in which the conductance can be changed. More specifically, a laminar flow element (bypass passage) and/or a hot wire sensor, a flow rate control valve, an orifice, and the like are provided inside (none of them are shown). The gas split ratio control units 66A, 66B, 66C, and 66D can adjust the split ratio (split ratio) of the process gas split to the branch pipes by adjusting the opening degrees of the orifices. In the gas split ratio control means 66A, 66B, 66C, and 66D, the process gas flows to the secondary side by a pressure difference (differential pressure) in the pipes on the primary side and the secondary side.
In the illustrated example, the gas flow ratio control unit 66 is configured by four gas flow ratio control units 66A, 66B, 66C, and 66D. The gas flow ratio controller 66 can control the flow rate ratio of the gas supplied to each of the plurality of branch pipes 69 by variably controlling the conductance of each of the plurality of gas flow ratio control units 66A, 66B, 66C, and 66D.
In each of the branch pipes 69, a second valve 67A, 67B, 67C, 67D, which is unique, is disposed on the secondary side of each of the gas split ratio control units 66A, 66B, 66C, 66D.
The process gas branched at a preset flow dividing ratio is supplied to each of the individual divided metal windows 57 via each of the branch pipes 69 in which the four gas flow dividing ratio control units 66A, 66B, 66C, and 66D are present. Specifically, the processing area includes, for example, a central processing area, an edge center portion in a peripheral processing area, a corner portion in the peripheral processing area, an intermediate processing area between the central processing area and the peripheral processing area, and the like. The four regions described above correspond to the four gas introduction pipes 55, respectively. The number of regions is not limited to four, and may be five, six or more as necessary. In this case, the number of the corresponding gas introduction pipes 55 corresponds to the number thereof. That is, the number of the gas introduction pipes 55 is five in the case of five sections, six in the case of six sections, and the like. The same applies to the gas split ratio control unit 66, the branch pipe 69, and the like located on the upstream side of the gas introduction pipe 55. In addition, a plurality of the divided metal windows 57 constituting each region may be provided. In this case, the gas introduction pipe 55 corresponding to each region branches off and is connected to each of the plurality of divided metal windows 57. In this case, the flow ratio of the process gas supplied to each process field is set in advance according to a recipe (process recipe). In the illustrated example, for the sake of simplicity of explanation, four divided metal windows 57 in the device cross section are described as corresponding to four regions of the processing region S.
In the illustrated example, the gas supply pipe 68 is extended from one gas supply unit 61, and four branch pipes 69 are branched and extended in the middle of the gas supply pipe 68. For example, a mode may be mentioned in which a plurality of gas supply portions are provided with individual gas supply pipes extending therefrom, and each gas supply pipe is branched into a plurality of branches and has a plurality of branch pipes. A plurality of process gases for performing various processes such as a film formation process and an etching process are supplied from one gas supply unit 61 to the gas supply pipe 68. In the system having a plurality of gas supply units, there is a system in which a plurality of process gases for performing a film formation process, an etching process, and the like are supplied from the respective gas supply units, and a process gas for performing a film formation process and the like is supplied from one gas supply unit, and a carrier gas such as a rare gas is supplied from the other gas supply unit. In addition, there are also other systems in which oxygen gas or the like for controlling the deposition of the reaction product is supplied from another gas supply unit, and these rare gas, oxygen gas or the like are also included in the process gas in the present specification.
The controller 90 controls the operations of the components of the substrate processing apparatus 100, such as the cooler 86, the high- frequency power supplies 59 and 83, the gas supply device 60, and the gas exhaust unit 28 that operates based on the monitoring information transmitted from the pressure gauge. The control Unit 90 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory). The CPU executes predetermined processing in accordance with a processing recipe stored in the memory areas of the RAM and the ROM. Control information of the substrate processing apparatus 100 corresponding to the processing conditions is set in the processing recipe. The control information includes, for example, a gas flow rate, a pressure in the processing container 20, a temperature of the lower substrate 72, a processing time, and the like.
The processing recipe and the program used by the control unit 90 may be stored in, for example, a hard disk, a magnetic disk, an optical magnetic disk, or the like. The processing recipe and the like may be stored in a removable computer-readable storage medium such as a CD-ROM, a DVD, or a memory card, and may be read by being attached to the control unit 90. The control unit 90 may further include a user interface such as an input device such as a keyboard and a mouse for performing an input operation of a command, a display device such as a display for visually displaying the operation state of the substrate processing apparatus 100, and an output device such as a printer.
Next, a gas supply method of embodiment 1 will be described.
As described above, the flow ratio of the process gas to each branch pipe 69 communicating with each of the divided metal windows 57 corresponding to a plurality of regions (central region, peripheral region, etc.) of the process field S is set in accordance with the process recipe, and the flow ratio of each process recipe is stored in the control device 90.
When a substrate G is processed by supplying a process gas from the gas supply unit 61 according to a certain process recipe, the controller 90 first controls the second valves 67A, 67B, 67C, and 67D of the respective branch pipes 69 to be closed and the first valve 63 and the third valve 65 to be opened.
By this control, the process gas is supplied to the gas supply pipe 68, the branch pipes 69, and the gas split ratio control means 66A, 66B, 66C, and 66D, which are located on the secondary side of the gas flow rate control device 62 (step of supplying the gas to the gas supply pipe, the branch pipes, and the gas split ratio control means). That is, in this step, the process gas is supplied to the insides of the gas flow ratio control units 66A, 66B, 66C, and 66D in advance before the process gas is supplied from the gas supply unit 61 to each process field via the gas flow rate control device 62.
Here, the effect of this step is explained with reference to fig. 2. In fig. 2, when the control device 90 executes the process gas supply start control for the gas flow rate control device 62 at time 0 seconds, the process gas supply (gas discharge from the MFC) is started at time t1, and the normal MFC flow rate is reached at time t 2: q1.
However, in a gas supply device having a branch pipe in the middle of a gas supply pipe and an FRC provided in each branch pipe, even when the MFC flow rate is a normal flow rate, if a certain flow rate of the process gas is not flowed through the FRC, the FRC cannot be normally controlled, and it is difficult to flow the process gas at the normal flow rate through each FRC. For this reason, it takes a long time until the normal flow rate of the process gas flows through each FRC from the start of gas discharge from the MFC.
Since the FRC control needs to start flowing gas at a certain flow rate through the FRC, for example, as shown in fig. 2, the flow rate of the FRC (total flow rate of all FRC flow rates) increases so as to gradually approach Q1, which is a normal processing flow rate, although the flow of the processing gas through the FRC is started at time t1 (see a dashed line graph). Thus, it takes a long time until the FRC flow rate becomes Q1 (or close to Q1) which is a processing flow rate, and it also takes a long time until the flow rate becomes a flow rate at which the FRC can be controlled. Therefore, the start time of the FRC control is time t3, and Δ t1 (see the two-dot chain line graph) of a long time elapses from time 0 second. As a result, it takes a long time until the flow rate of the process gas supplied to the process field S becomes stable.
In the gas supply method according to the present embodiment, in the step of supplying the gas to the gas supply pipe, the branch pipes, and the gas split ratio control means, the process gas having the flow rate Q2(< Q1) of a certain degree is already passed to the FRC located in each branch pipe at the time 0 second from the start of the gas supply from the MFC. By this step, the time until the FRC flow rate (total flow rate of all FRC flow rates) approaches Q1, which is the processing flow rate, becomes very short (see the dot-and-dash chart). This shortens the time until the flow rate at which the FRCs can be controlled is reached. Therefore, as shown in fig. 2, the start timing of the FRC control is significantly advanced from time t3 to time t4 (see the dashed-dotted line graph). As a result, the flow rate of the process gas supplied to the process field S is stabilized relatively early.
In the above-described steps, the pressure in the secondary-side gas supply pipe 68 of the gas flow rate control device 62 or the pressure in (the primary side of the gas split ratio control means 66A, 66B, 66C, 66D of) the branch pipe 69 is constantly measured by the pressure sensor 64 located between the first valve 63 and the third valve 65. The measured measurement data is transmitted to the control device 90 at any time.
Data relating to the set pressure is stored in the control device 90. The set pressure is a pressure suitable for starting the FRC control as early as possible, and for example, the set pressure can be set in a range of 50Torr to 300Torr (1 Torr-133.4 Pa).
Then, when the control device 90 detects that the pressure of the pressure sensor 64 reaches the set pressure (step of detecting whether or not the pressure reaches the set pressure), the control device 90 then executes control of closing the first valve 63 (first valve closing step).
In this way, by closing the first valve 63 and the second valves 67A, 67B, 67C, and 67D in the branch pipes 69, the pressure in the secondary-side gas supply pipe 68 of the gas flow rate control device 62 and the pressure in (the primary sides of the gas split ratio control units 66A, 66B, 66C, and 66D of) the branch pipes 69 are maintained at the set pressures.
Thereafter, the control device 90 performs control of opening the first valve 63 and the second valves 67A, 67B, 67C, and 67D at predetermined timings according to the process recipe, and supplies the process gas to the corresponding one of the process regions S via the respective branch pipes 69 (step of supplying the gas to the process container).
According to the substrate processing apparatus 100 and the gas supply method of the present embodiment, when the substrate G is to be processed, the gas is supplied to the inside of the FRC at a flow rate to some extent in advance, whereby the time for the FRC to reach the normal flow rate can be shortened. Further, the process gas can be stably supplied to the process field S in a short time. In addition, when the same effect is obtained by optimizing the volumes (length, thickness, etc.) of the gas supply pipe and/or the branch pipe, since the flow rate of the process gas to be flowed through the apparatus differs for each application, it is necessary to change the volumes of the various pipes to the optimum volumes for each apparatus, and the present embodiment does not require such hardware change.
[ substrate processing apparatus and gas supply method according to embodiment 2 ]
Next, an example of a substrate processing apparatus and a gas supply method according to embodiment 2 of the present invention will be described with reference to fig. 3. Here, fig. 3 is a longitudinal sectional view showing an example of the substrate processing apparatus according to embodiment 2.
The substrate processing apparatus 100A is different from the substrate processing apparatus 100 in that it has a gas supply apparatus 60A including a main gas supply system for supplying a main gas and an auxiliary gas supply system for supplying an auxiliary gas.
Here, the main gas and the assist gas are the same or different kinds of process gases, and both or either of them is a carrier gas such as a plurality of process gases for performing various processes such as a film formation process and an etching process, a rare gas, or oxygen gas for controlling deposition of a reaction product. In the present specification, the processing gas includes a mixture of a main gas and an auxiliary gas.
The main gas supply system includes a main gas supply portion 61A (gas supply portion) and a main gas supply pipe 68A (an example of a gas supply pipe) communicating with the main gas supply portion 61A. The main gas supply system further includes four main gas branch pipes 69A (an example of a branch pipe) branched from the main gas supply pipe 68A and communicating with the corresponding gas introduction pipes 55.
A main gas flow rate control device 62A (gas flow rate control device) is disposed on the secondary side of the main gas supply portion 61A, and a first valve 63A is disposed on the secondary side of the main gas flow rate control device 62A. Further, a third valve 65A is disposed on the secondary side of the first valve 63A and on the primary side of the main gas branch pipe 69A. Further, a pressure sensor 64A is disposed between the first valve 63A and the third valve 65A.
Gas split ratio control units 66A, 66B, 66C, and 66D are disposed in the four main gas branch pipes 69A, respectively. In each of the branch pipes 69A, second valves 67A, 67B, 67C, and 67D, which are respectively inherent to the secondary sides of the gas split ratio control units 66A, 66B, 66C, and 66D, are disposed.
On the other hand, the assist gas supply system includes an assist gas supply portion 61B (gas supply portion) and an assist gas supply pipe 68B (an example of a gas supply pipe) communicating with the assist gas supply portion 61B. The auxiliary gas supply system further includes four branch pipes 69B (an example of a branch pipe) for auxiliary gas, which branch from the auxiliary gas supply pipe 68B and communicate with the respective corresponding gas introduction pipes 55.
A secondary side of the auxiliary gas supply unit 61B is provided with an auxiliary gas flow rate control device 62B (gas flow rate control device), and a secondary side of the auxiliary gas flow rate control device 62B is provided with a first valve 63B. Further, a third valve 65B is disposed on the secondary side of the first valve 63B and on the primary side of the auxiliary gas branch pipe 69B. A pressure sensor 64B is disposed between the first valve 63B and the third valve 65B.
Gas split ratio control units 66E, 66F, 66G, and 66H are disposed in the four auxiliary gas branch pipes 69B, respectively. In each of the branch pipes 69B, a second valve 67E, 67F, 67G, and 67H, which are unique, are disposed on the secondary side of the gas split ratio control means 66E, 66F, 66G, and 66H, respectively.
The eight gas flow ratio control units 66A, 66B, 66C, 66D, 66E, 66F, 66G, and 66H constitute a gas flow ratio control unit 66.
The secondary sides of the second valves 67A, 67B, 67C, and 67D in the main gas branch pipes 69A constituting the main gas supply system communicate with the secondary sides of the second valves 67E, 67F, 67G, and 67H in the auxiliary gas branch pipes 69B constituting the auxiliary gas supply system.
In the gas supply method according to embodiment 2, the set pressure in the main gas supply system and the set pressure in the auxiliary gas supply system may be the same pressure or different pressures, and the control content of the control device 90 for both gas supply systems is the same as that of the gas supply method according to embodiment 1.
That is, the main gas supply system and the auxiliary gas supply system both circulate the process gas at a certain flow rate to the gas split ratio control units 66A to 66H in advance, and close the first valves 63A and 63B when the pressure gauges 64A and 64B are set to the set pressures, respectively. Next, according to the process recipe, the first valves 63A and 63B and the second valves 67A to 67H are opened, and the main gas and the auxiliary gas are mixed in the secondary side of the second valves 67A to 67D according to the flow dividing ratio to generate four kinds of process gases. The generated process gases are supplied to corresponding four of the process regions S through the branch pipes 69A. The number of areas corresponding to the processing field S is not limited to four, and the number of areas may be five, six, or more as in embodiment 1. In this case, the supply system of the main gas and the auxiliary gas may be set according to the number of the regions.
[ experiment for verifying time until stable supply of processing gas ]
The present inventors carried out the following experiments: the substrate processing apparatus shown in fig. 3 was manufactured, and the time required for stable supply of the process gas (final convergence time) was measured by varying the set pressures of the main gas supply system and the auxiliary gas supply system. Here, the final convergence time is a time required for the rate of difference from the target gas flow rate to be ± 2% or less.
In this experiment, the region where the process gas had been stored in advance was different. Specifically, in fig. 3, control is performed in comparative examples 1to 5 in which the third valves 65A and 65B are closed and the process gas is accumulated in the primary side of the third valves 65A and 65B (the process gas is not supplied to the FRC in advance), and in examples 1to 4 in which the process gas is supplied to the FRC in advance. In the reference example, the processing gas is not supplied to the FRC in advance, and the pressure in each supply system is zero. Table 1 below shows various conditions and effects of the reference examples, comparative examples, and examples.
[ TABLE 1 ]
Figure BDA0002749300680000151
As is clear from table 1, comparative examples 3 and 4 have a longer final convergence time than the reference example, and no effect is obtained.
On the other hand, the final convergence time of each example was found to be shorter than that of the reference example. In example 4 in which the set pressures of the main gas supply system and the auxiliary gas supply system were the same and 200Torr, the final convergence time was significantly shortened to 20% or less, and it was verified that it is preferable to set the pressures in the supply piping systems of both the main gas supply system and the auxiliary gas supply system to the same level and to the 200Torr level.
The configuration and the like exemplified in the above embodiment may be another embodiment configured by combining other constituent elements and the like, and the present invention is not limited to the configuration shown here. This point can be changed without departing from the scope of the present invention, and can be determined as appropriate depending on the application form thereof.
For example, although the substrate processing apparatuses 100 and 100A illustrated in the drawings have been described as an inductively coupled plasma processing apparatus having a metal window, when a configuration is adopted in which gas is supplied to a plurality of regions in a processing container at a predetermined flow rate ratio, an inductively coupled plasma processing apparatus having a dielectric window instead of the metal window may be employed, or a plasma processing apparatus of another type may be employed. Specifically, Electron Cyclotron resonance Plasma (ECP), microwave excited Plasma (HWP), and parallel plate Plasma (CCP) can be cited. Further, microwave-excited Surface Wave Plasma (SWP) can be mentioned. These plasma processing apparatuses include ICP, can independently control ion flux and ion energy, can freely control etching shape and selectivity, and can obtain 1011To 1013cm-3High electron density to a certain degree.

Claims (10)

1. A gas supply method performed in a gas supply apparatus that supplies a gas to a process container for processing a substrate, characterized in that:
the gas supply device comprises:
at least one gas flow rate control device provided in a gas supply pipe communicating from a gas supply unit to the processing chamber;
a gas flow ratio control unit including two or more gas flow ratio control means provided in two or more branch pipes branching off from the secondary side of the gas flow rate control device, respectively, and having a variable conductance flow path in which conductance can be changed;
a first valve and a pressure sensor which are located on a secondary side of the gas flow rate control device and on a primary side of the gas split ratio control unit; and
a second valve located at a secondary side of the gas split ratio control unit,
the gas supply method includes:
a step of closing the second valve and opening the first valve to supply the gas to the gas supply pipe, the branch pipe, and the gas split ratio control unit located on the secondary side of the gas flow rate control device when the substrate is to be processed;
detecting whether or not the pressure of the gas supply pipe or the branch pipe on the secondary side of the gas flow rate control device reaches a set pressure by the pressure sensor;
a step of closing the first valve; and
opening the first valve and the second valve to supply the gas to the processing container.
2. The gas supply method according to claim 1, wherein:
the gas flow ratio controller variably controls the conductance of each of the plurality of gas flow ratio controllers, thereby controlling the gas flow ratio supplied to each of the plurality of branch pipes.
3. The gas supply method according to claim 1 or 2, characterized in that:
the plurality of branch pipes are respectively communicated with corresponding processing areas of the processing container, and the gas flowing through each branch pipe is supplied to the corresponding processing area.
4. A gas supply method according to claim 3, characterized in that:
the gas comprises a primary gas and a secondary gas,
the gas supply section has a main gas supply section and an auxiliary gas supply section,
the gas flow rate control device has a gas flow rate control device for a main gas and a gas flow rate control device for an auxiliary gas,
the gas supply pipe has a main gas supply pipe through which the main gas flows and an auxiliary gas supply pipe through which the auxiliary gas flows,
the branch pipe has a branch pipe for main gas through which the main gas flows and a branch pipe for auxiliary gas through which the auxiliary gas flows,
the secondary side of the second valve of the branch pipe for main gas communicates with the secondary side of the second valve of the corresponding branch pipe for auxiliary gas,
the auxiliary gas is supplied to the main gas to generate two or more kinds of process gases, and the two or more kinds of process gases are supplied to the corresponding process regions of the process container, respectively.
5. The gas supply method according to claim 4, wherein:
detecting whether or not the pressure of the main gas supply pipe or the main gas branch pipe on the secondary side of the main gas flow rate control device reaches the set pressure, and detecting whether or not the pressure of the auxiliary gas supply pipe or the auxiliary gas branch pipe on the secondary side of the auxiliary gas flow rate control device reaches the set pressure, and closing the first valves on the secondary sides of both the main gas flow rate control device and the auxiliary gas flow rate control device after both the pressures reach the set pressure,
opening both of the first valves and both of the second valves to generate the process gas.
6. A substrate processing apparatus having a gas supply device for supplying a gas to a processing container for processing a substrate, comprising:
at least one gas flow rate control device provided in a gas supply pipe communicating from a gas supply unit to the processing chamber;
a gas flow ratio control unit including gas flow ratio control means provided in two or more branch pipes branching off from the secondary side of the gas flow rate control device, and having a variable conductance flow path in which conductance can be changed;
a first valve and a pressure sensor which are located on a secondary side of the gas flow rate control device and on a primary side of the gas split ratio control unit;
a second valve located at a secondary side of the gas split ratio control unit; and
a control device for controlling the operation of the motor,
the control device performs control of:
a control unit for closing the second valve and opening the first valve to supply the gas to the gas supply pipe, the branch pipe, and the gas split ratio control unit located on the secondary side of the gas flow rate control device when the substrate is to be processed;
a control unit configured to control to close the first valve after detecting that the pressure in the gas supply pipe or the branch pipe on the secondary side of the gas flow rate control unit has reached a set pressure by the pressure sensor; and
and a control for opening the first valve and the second valve to supply the gas to the processing container.
7. The substrate processing apparatus according to claim 6, wherein:
the control device controls the flow rate ratio of the gas supplied to each of the plurality of branch pipes by variably controlling the conductance of each of the plurality of gas split ratio control units by the gas split ratio control unit.
8. The substrate processing apparatus according to claim 6 or 7, wherein:
a plurality of branch pipes respectively communicating with the corresponding processing regions of the processing container,
the gas flowing through each of the branch pipes is supplied to the corresponding processing region.
9. The substrate processing apparatus according to claim 8, wherein:
the gas comprises a primary gas and a secondary gas,
the gas supply section has a main gas supply section and an auxiliary gas supply section,
the gas flow rate control device has a gas flow rate control device for a main gas and a gas flow rate control device for an auxiliary gas,
the gas supply pipe has a main gas supply pipe through which the main gas flows and an auxiliary gas supply pipe through which the auxiliary gas flows,
the branch pipe has a branch pipe for main gas through which the main gas flows and a branch pipe for auxiliary gas through which the auxiliary gas flows,
the secondary side of the second valve of the branch pipe for main gas communicates with the secondary side of the second valve of the corresponding branch pipe for auxiliary gas,
the auxiliary gas is supplied to the main gas to generate two or more kinds of process gases, and the two or more kinds of process gases are supplied to the corresponding process regions of the process container, respectively.
10. The substrate processing apparatus according to claim 9, wherein:
the control device performs control to close the first valves of both the main gas flow rate control device and the auxiliary gas flow rate control device after the pressure sensor detects that the pressure of the main gas supply pipe or the main gas branch pipe on the secondary side of the main gas flow rate control device has reached the set pressure and the pressure of the auxiliary gas supply pipe or the auxiliary gas branch pipe on the secondary side of the auxiliary gas flow rate control device has reached the set pressure, and then performs control to open the first valves of both the main gas flow rate control device and the auxiliary gas flow rate control device and the second valve of both the first valves and the second valve to generate the process gas.
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