CN114496701A - Plasma processing apparatus, method of manufacturing the same, and plasma processing method - Google Patents
Plasma processing apparatus, method of manufacturing the same, and plasma processing method Download PDFInfo
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- CN114496701A CN114496701A CN202111292961.0A CN202111292961A CN114496701A CN 114496701 A CN114496701 A CN 114496701A CN 202111292961 A CN202111292961 A CN 202111292961A CN 114496701 A CN114496701 A CN 114496701A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a plasma processing apparatus, a method of manufacturing the same, and a plasma processing method, which can stabilize discharge even when the plasma processing apparatus is large-sized. The plasma processing apparatus processes a substrate in a processing chamber of a processing container in which plasma is generated, and includes: a high-frequency power supply for generating plasma; a mounting table capable of mounting the substrate thereon and electrically connected to a high-frequency bias power supply; a metal protective member that covers at least a part of an exposed surface of the processing container that is grounded and that communicates with the processing chamber; a first ground potential member that is fastened to one end of the protective member by a first fastening member made of metal, and that has a ground potential by being in contact with a part of the processing container; and a second ground potential member that is fastened to the other end of the protective member by a second fastening member made of metal, and that has a ground potential by being in contact with the other portion of the processing container.
Description
Technical Field
The invention relates to a plasma processing apparatus, a method of manufacturing the same, and a plasma processing method.
Background
Patent document 1 discloses a plasma processing apparatus for performing a plasma process on a substrate placed on a placement surface of a placement table in a processing chamber while applying a high-frequency bias to the placement table. In the plasma processing apparatus, a first opening shutter and a second opening shutter are provided at the exhaust port portion, and the first opening shutter and the second opening shutter are provided on the downstream side of the exhaust passage and the upstream side of the exhaust passage, respectively. The first aperture plate is grounded, the second aperture plate is in an electrically floating state, and the first aperture plate and the second aperture plate have an interval therebetween capable of generating a stable discharge. According to the plasma processing apparatus disclosed in patent document 1, it is possible to suppress plasma leakage to the exhaust portion and to suppress unstable glow discharge above the baffle plate, thereby generating stable plasma in the processing chamber.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open publication No. 2017-17180
Disclosure of Invention
Technical problem to be solved by the invention
The invention provides a plasma processing apparatus, a manufacturing method thereof and a plasma processing method, wherein discharge can be stabilized even if the plasma processing apparatus is large-sized.
Technical solution for solving technical problem
A plasma processing apparatus according to an aspect of the present invention is a plasma processing apparatus capable of processing a substrate in a processing chamber of a processing chamber in which plasma is generated, the plasma processing apparatus including:
a high-frequency power supply for generating plasma;
a mounting table capable of mounting the substrate thereon and electrically connected to a high-frequency bias power supply;
a metal protective member that covers at least a part of an exposed surface of the processing container that is grounded and that communicates with the processing chamber;
a first ground potential member that is fastened to one end of the protective member by a first fastening member made of metal, and that has a ground potential by being in contact with a part of the processing container; and
and a second ground potential member which is fastened to the other end of the protective member by a second fastening member made of metal, and which has a ground potential by being in contact with the other portion of the processing container.
Effects of the invention
According to the present invention, even when the plasma processing apparatus is increased in size, the discharge can be stabilized.
Drawings
FIG. 1 is a vertical sectional view showing an example of a plasma processing apparatus according to the embodiment.
Fig. 2 is an enlarged view of a portion II of fig. 1, and is an enlarged view of a range from the exhaust through hole of the bottom plate of the chamber to above the exhaust portion.
Fig. 3 is a view from III-III of fig. 2.
Description of the reference numerals
19: exhaust through hole (exposed surface)
20: processing container
41: bottom cover plate (first ground potential component)
42: first inner wall covering plate (protection component)
43: exhaust pipes (second ground potential component)
44: exhaust net (second ground potential part)
46: second inner wall cover plate (second ground potential part)
47: fastening screw (first fastening component)
48: fastening screw (second fastening component)
56: high frequency power supply (high frequency power supply for plasma generation)
70: placing table
83: high frequency power supply (high frequency power supply for bias)
100: plasma processing apparatus
S: processing chamber
G: a substrate.
Detailed Description
Hereinafter, a plasma processing apparatus, a method of manufacturing the same, and a plasma processing method according to embodiments of the present invention will be described with reference to the drawings. In the present specification and the drawings, substantially the same components may be denoted by the same reference numerals, and redundant description may be omitted.
Plasma processing apparatus, method of manufacturing the same, and plasma processing method of the embodiments
With reference to fig. 1 to 3, an example of a plasma processing apparatus, a method of manufacturing the same, and a plasma processing method according to an embodiment of the present invention will be described. Here, fig. 1 is a vertical sectional view showing an example of the plasma processing apparatus according to the embodiment. Fig. 2 is an enlarged view of a portion II of fig. 1, which is an enlarged view of a range from the exhaust through hole of the bottom plate of the chamber to a position above the exhaust portion, and fig. 3 is a view from III-III of fig. 2.
The Plasma processing apparatus 100 shown in fig. 1 is an Inductively Coupled Plasma (ICP) processing apparatus for performing various substrate processing methods on a substrate G (hereinafter, simply referred to as a "substrate") having a rectangular shape in a plan view for a Flat Panel Display (FPD) by using various substrate processing methods. As a material of the substrate, glass is mainly used, and a transparent synthetic resin or the like can be used depending on the application. Here, the substrate processing includes etching processing, film formation processing using a CVD (Chemical Vapor Deposition) method, and the like. Examples of the FPD include a Liquid Crystal Display (LCD), an Electro Luminescence Display (EL), and a Plasma Display Panel (PDP). The substrate includes a form of supporting substrate in addition to a form of patterning a circuit on its surface. Further, the planar size of the substrate for FPD is scaled up with the generation of the new generations, and the planar size of the substrate G processed by the plasma processing apparatus 100 is considered at least from the size of about 1500mm × 1800mm of the sixth generation to the size of about 3000mm × 3400mm of the 10.5 generation, for example. In addition, the thickness of the substrate G is on the order of 0.2mm to several mm.
The plasma processing apparatus 100 shown in fig. 1 includes: a rectangular box-shaped processing container 20; a mounting table 70 having a rectangular outer shape in a plan view, which is disposed in the processing chamber 20 and on which a substrate G can be mounted; and a control section 90. The processing container may have a cylindrical box shape, an elliptic cylindrical box shape, or the like, and in this form, the mounting table may have a circular or elliptic shape, or the substrate placed on the mounting table may have a circular shape.
The processing container 20 is partitioned into 2 spaces in the upper and lower directions by the metal window 30, the antenna chamber a as an upper space is formed by the upper chamber 13, and the processing chamber S as a lower space is formed by the lower chamber 17. In the processing container 20, a rectangular ring-shaped support frame 14 is disposed so as to protrude toward the inside of the processing container 20 at a position that becomes a boundary between the upper chamber 13 and the lower chamber 17, and a metal window 30 is attached to the support frame 14.
The upper chamber 13 forming the antenna chamber a is formed by the side wall 11 and the top plate 12, and is formed by a metal such as aluminum or an aluminum alloy as a whole.
The lower chamber 17 having the processing chamber S therein is formed by the side walls 15 and the bottom plate 16, and is formed by a metal such as aluminum or an aluminum alloy as a whole. In addition, the side wall 15 is grounded via a ground line 21.
The support frame 14 is made of a metal such as conductive aluminum or aluminum alloy, and may be referred to as a metal frame.
A rectangular ring-shaped (endless (closed ring-shaped)) seal groove 22 is formed at the upper end of the side wall 15 of the lower chamber 17, a seal member 23 such as an O-ring is fitted into the seal groove 22, and the contact surface of the support frame 14 holds the seal member 23, thereby forming a seal structure between the lower chamber 17 and the support frame 14.
A feed-in/feed-out port 18 for feeding substrates G into/out of the lower chamber 17 is opened in the side wall 15 of the lower chamber 17, and the feed-in/feed-out port 18 is configured to be openable and closable by a shutter 24. A transfer chamber (neither of which is shown) having a transfer mechanism built therein is adjacent to the lower chamber 17, and the substrate G is carried in and out through the carry-in/out port 18 by the transfer mechanism while controlling the opening and closing of the shutter 24.
Further, a plurality of exhaust through holes 19 (an example of an exposed surface) are opened in the bottom plate 16 included in the lower chamber 17, the exhaust pipe 43 is connected to each exhaust through hole 19, and the exhaust pipe 43 is connected to the exhaust device 27 via the opening/closing valve 26. The exhaust pipe 43, the opening/closing valve 26, and the exhaust device 27 form an exhaust unit 28. The exhaust unit 27 has a vacuum pump such as a turbo molecular pump, and can evacuate the lower chamber 17 to a predetermined degree of vacuum during processing. A pressure gauge (not shown) is provided at an appropriate position of the lower chamber 17, and monitoring information generated by the pressure gauge is transmitted to the control unit 90. The detailed structure from the exhaust through hole 19 to the upper side of the exhaust pipe 43 in the portion II surrounded by the chain line in fig. 1 will be described in detail below.
The mounting table 70 includes a base 71 and an electrostatic chuck 76 formed on an upper surface 71a of the base 71.
The base 71 has a rectangular shape in plan view and has a planar size approximately equal to that of the substrate G placed on the stage 70. The length of the long side of the base 71 can be set to about 1800mm to 3400mm, and the length of the short side can be set to about 1500mm to 3000 mm. The thickness of the base 71 can be, for example, on the order of 50mm to 100mm with respect to the planar dimension.
The base 71 is provided with a curved temperature control medium flow path 72a so as to cover the entire area of the rectangular plane, and is formed of stainless steel, aluminum, an aluminum alloy, or the like. The temperature adjusting medium passage 72a may be provided in the electrostatic chuck 76. As shown in the illustrated example, the base 71 may be a laminate of two members formed of aluminum, aluminum alloy, or the like, instead of one member.
A box-shaped base 78 formed of an insulating material and having a stepped portion on the inner side is fixed to the bottom plate 16 of the lower chamber 17, and the mounting table 70 is placed on the stepped portion of the base 78.
An electrostatic chuck 76 on which the substrate G can be directly placed is formed on the upper surface 71a of the base 71. The electrostatic chuck 76 has: a ceramic layer 74 which is a dielectric coating formed by thermal spraying of a ceramic such as alumina; and a conductive layer 75 (electrode) having an electrostatic adsorption function embedded in the ceramic layer 74.
The conductive layer 75 is connected to a dc power supply 85 via a power supply line 84. When a switch (not shown) inserted in the power feed line 84 is turned ON by the control unit 90, a dc voltage is applied from the dc power supply 85 to the conductive layer 75, thereby generating coulomb force. The substrate G is electrostatically attracted to the upper surface of the electrostatic chuck 76 by the coulomb force, and is held on the upper surface 71a of the base 71.
The base 71 constituting the mounting table 70 is provided with a curved temperature control medium flow path 72a so as to cover the entire area of the rectangular plane. A delivery pipe 72b and a return pipe 72c are connected to both ends of the temperature-adjusting medium flow path 72a, the delivery pipe 72b supplies the temperature-adjusting medium to the temperature-adjusting medium flow path 72a, and the return pipe 72c discharges the temperature-adjusting medium that has been increased in temperature by flowing through the temperature-adjusting medium flow path 72 a.
As shown in fig. 1, a delivery flow path 87 and a return flow path 88 are communicated with the delivery pipe 72b and the return pipe 72c, respectively, and the delivery flow path 87 and the return flow path 88 are communicated with the cooler 86. The cooler 86 has: a main body part for controlling the temperature and the release flow rate of the temperature adjusting medium; and a pump (both not shown) for pressurizing and feeding the temperature adjusting medium. As the temperature adjusting medium, a refrigerant, such as GALDEN (registered trademark) or fluoralert (registered trademark), can be used. The temperature adjustment system illustrated in the figure is a system in which a temperature adjustment medium is caused to flow through the base member 71, but a system in which a heater or the like is built in the base member 71 and temperature adjustment is performed by the heater may be employed, or a system in which temperature adjustment is performed by both the temperature adjustment medium and the heater. In addition, instead of the heater, the temperature may be adjusted by passing a high-temperature-adjusting medium through the heater. The heater as the resistor is made of tungsten, molybdenum, or a compound of any of these metals with alumina, titanium, or the like. In the illustrated example, the temperature adjusting medium flow path 72a is formed in the base 71, but the electrostatic chuck 76 may have a temperature adjusting medium flow path, for example.
A temperature sensor (not shown) such as a thermocouple is disposed on the base 71, and monitoring information of the temperature sensor is immediately sent to the control unit 90. Then, based on the transmitted monitoring information, the temperature of the base 71 and the substrate G is controlled by the control section 90. More specifically, the temperature and the flow rate of the temperature-adjusting medium supplied from the cooler 86 to the delivery passage 87 are adjusted by the control unit 90. The temperature adjustment control of the mounting table 70 is performed by circulating the temperature adjustment medium subjected to the temperature adjustment and the flow rate adjustment through the temperature adjustment medium flow path 72 a. A temperature sensor such as a thermocouple may be disposed on the electrostatic chuck 76, for example.
A stepped portion is formed by the outer periphery of the electrostatic chuck 76 and the substrate 71 and the upper surface of the base 78, and a rectangular frame-shaped focus ring 79 is placed on the stepped portion. In a state where the focus ring 79 is provided at the step portion, the upper surface of the focus ring 79 is set to be lower than the upper surface of the electrostatic chuck 76. The focus ring 79 is formed of ceramic such as alumina or quartz.
A power supply member 80 is connected to the lower surface of the base 71. A power supply line 81 is connected to the lower end of the power supply member 80, and the power supply line 81 is connected to a high-frequency power supply 83 (an example of a high-frequency power supply for bias) as a bias power supply via a matching box 82 for impedance matching. By applying a high-frequency power of, for example, 3.2MHz from the high-frequency power supply 83 to the stage 70, an RF bias is generated, and ions generated by the high-frequency power supply 56, which is a plasma generation source described below, can be adsorbed to the substrate G. Therefore, in the plasma etching process, both the etching rate and the etching selectivity can be improved. In this manner, the stage 70 mounts the substrate G and forms a bias electrode for generating an RF bias. At this time, a portion of the chamber which becomes a ground potential functions as a counter electrode of the bias electrode, and constitutes a return circuit of the high-frequency electric power. The metal window 30 may be configured as a part of a return circuit for high-frequency electric power.
The metal window 30 is formed of a plurality of divided metal windows 31. The number of the divided metal windows 31 forming the metal window 30 can be set to various numbers such as 12, 24, and the like. The divided metal window 31 has a conductor plate 32 and a shower plate 34. The conductor plate 32 and the shower plate 34 are both made of a non-magnetic and electrically conductive material, and are made of a corrosion-resistant metal, or a corrosion-resistant surface-processed metal, i.e., aluminum or an aluminum alloy, stainless steel, or the like. The surface processing having corrosion resistance is, for example, anodic oxidation treatment or ceramic thermal spraying. The exposed surface 34a of the shower plate 34 facing the processing chamber S may be coated with a plasma-resistant coating layer obtained by anodizing or ceramic thermal spraying. The conductor plate 32 is grounded via a ground line (not shown), and the shower plate 34 is also grounded via the conductor plates 32 joined to each other.
Each of the divided metal windows 31 constituting the metal window 30 is suspended from the ceiling plate 12 of the upper chamber 13 by a plurality of suspension wires (not shown). A spacer (not shown) formed of an insulating member is disposed above each of the divided metal windows 31, and a high-frequency antenna 51 (an example of an inductively coupled antenna) is disposed at a distance from the conductor plate 32 by the spacer. The high-frequency antenna 51 contributes to the generation of plasma, and is formed by winding an antenna wire made of a metal having good conductivity such as copper in a ring shape or a spiral shape. For example, the loop-shaped antenna wire may be arranged in multiple. Since the high-frequency antenna 51 is provided on the upper surface of the divided metal window 31, it is suspended from the top plate 12 through the divided metal window 31.
A gas diffusion groove 33 is formed in the lower surface of the conductor plate 32, and a through hole 32b is provided to communicate the gas diffusion groove 33 with the upper end surface 32 a. The gas introduction pipe 52 is buried in the through hole 32 b. The shower plate 34 is provided with a plurality of gas release holes 35 communicating with the gas diffusion groove 33 of the conductor plate 32 and the processing chamber S. The shower plate 34 is fastened to the lower surface of the region of the conductor plate 32 outside the gas diffusion groove 33 by a metal screw (not shown). In addition, the gas diffusion groove may be formed on the upper surface of the shower plate. Each of the divided metal windows 31 is electrically insulated from the support frame 14 and the adjacent divided metal windows 31 by the insulating member 37. Here, the insulating member 37 is made of a fluororesin such as PTFE (Polytetrafluoroethylene).
A feeding member 53 extending upward of the chamber 13 is connected to the radio-frequency antenna 51, a feeder 54 is connected to an upper end of the feeding member 53, and the feeder 54 is connected to a radio-frequency power supply 56 (an example of a radio-frequency power supply for plasma generation) via a matching box 55 for impedance matching.
An induced electric field is formed in the lower chamber 17 by applying a high-frequency electric power of, for example, 13.56MHz from the high-frequency power source 56 to the high-frequency antenna 51. The processing gas supplied from the shower plate 34 to the processing chamber S is converted into plasma by the induced electric field to generate inductively coupled plasma, and ions in the plasma are supplied to the substrate G.
The high-frequency power source 56 is a plasma generation source, and the high-frequency power source 83 connected to the stage 70 serves as a bias source for attracting generated ions and imparting kinetic energy thereto. In this way, by generating plasma by inductive coupling with respect to the ion generating source and controlling the ion energy by connecting a bias source as another power source to the stage 70, the generation of plasma and the control of the ion energy can be performed independently, and the degree of freedom of the process can be improved.
The gas introduction pipes 52 of the respective divided metal windows 31 are joined at one point in the antenna chamber a, and the gas introduction pipe 52 extending upward hermetically penetrates the supply port 12a opened in the ceiling plate 12 of the upper chamber 13. The gas introduction pipe 52 is connected to a process gas supply source 64 via a gas supply pipe 61 that is hermetically connected.
An on-off valve 62 and a flow rate controller 63 such as a mass flow controller are inserted in the middle of the gas supply pipe 61. The gas supply pipe 61, the on-off valve 62, the flow rate controller 63, and the process gas supply source 64 form a process gas supply unit 60. The gas supply pipe 61 is branched at an intermediate portion, and an opening/closing valve, a flow rate controller, and a process gas supply source (not shown) corresponding to the type of the process gas are communicated with each branch pipe.
In the plasma processing, the process gas supplied from the process gas supply unit 60 is supplied to the gas diffusion groove 33 of the conductor plate 32 included in each of the divided metal windows 31 via the gas supply pipe 61 and the gas introduction pipe 52. Then, the gas is discharged from each gas diffusion groove 33 into the processing chamber S through the gas discharge holes 35 of each shower plate 34.
The gas introduction pipes 52 provided in the respective divided metal windows 31 do not need to be joined together but may individually communicate with the process gas supply unit 60, and the supply control of the process gas may be performed for each divided metal window 31. Further, the gas introduction pipes 52 of the plurality of divided metal windows 31 positioned outside the metal window 30 may be joined into one, the gas introduction pipes 52 of the plurality of divided metal windows 31 positioned inside the metal window 30 may be joined into another, and the gas introduction pipes 52 may be independently communicated with the process gas supply unit 60 to control the supply of the process gas. That is, the former method is a method of controlling the supply of the process gas for each of the divided metal windows 31, and the latter method is a method of controlling the supply of the process gas for each of the outer and inner regions of the metal window 30.
Each of the divided metal windows 31 has a unique high-frequency antenna, and can be controlled to apply high-frequency electric power independently to each high-frequency antenna.
The controller 90 controls the operations of the respective components of the plasma processing apparatus 100, for example, the operation of the cooler 86, the high- frequency power supplies 56 and 83, the process gas supply unit 60, the exhaust unit 28 based on the monitoring information transmitted from the pressure gauge, and the like. The control Unit 90 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory). The CPU performs predetermined processing in accordance with a recipe (processing recipe) stored in the memory areas of the RAM and the ROM. Control information of the plasma processing apparatus 100 corresponding to the processing conditions is set in the recipe. The control information includes, for example, a gas flow rate, a pressure in the processing container 20, a temperature of the substrate 71, a processing time, and the like.
The program applicable to the scheme and control section 90 is stored in, for example, a hard disk, an optical disk, a magneto-optical disk, or the like. The recipe and the like may be provided in the control unit 90 in a state of being stored in a portable computer-readable storage medium such as a CD-ROM, a DVD, or a memory card, and may be in a readable form. The control unit 90 may have other user interfaces such as a keyboard for inputting commands and an input device such as a mouse, a display device such as a display for visually displaying the operation state of the plasma processing apparatus 100, and an output device such as a printer.
Next, a detailed structure from the exhaust through hole 19 opened in the bottom plate 16 constituting the lower chamber 17 of the process container 20 to the upper side of the exhaust part 28 will be described with reference to fig. 2 and 3. In the following description, the shapes of the exhaust through hole 19 and the inner wall surface of the exhaust pipe 43 in a plan view are described as circles, and the shapes thereof in a plan view may be rectangles other than circles, rectangles of squares, polygons other than rectangles, ellipses, and the like.
The inner wall surface of the exhaust through hole 19 opened in the bottom plate 16 of the lower chamber 17 is an example of an exposed surface communicating with the processing chamber S.
As shown in fig. 1, the side wall 15 and the bottom plate 16 of the lower chamber 17 are grounded via a ground line 21. A floor covering plate 41 for covering the upper surface 16a is placed on the upper surface 16a of the floor 16 in a region other than the exhaust through hole 19. The bottom cover plate 41 is a metal plate made of aluminum, aluminum alloy, or the like, and is in contact with the upper surface (an example of a part of the processing vessel) of the bottom plate 16, and is fixed by a fastening member (not shown), such as a screw, so as to maintain electrical conduction, whereby the bottom cover plate 41 forms a first ground potential member having a ground potential.
A first inner wall covering plate 42, which is a cylindrical protective member, is fitted into an inner wall surface of the exhaust through hole 19, which is circular in a plan view in the figure, and an endless flange 42a, which extends laterally from an upper end of the first inner wall covering plate 42, is placed on an upper surface of the floor covering plate 41. Further, eight fixing holes 42c are provided at equal intervals in the circumferential direction thereof, for example, below the inner wall surface of the first inner wall covering plate 42. The fixing hole 42c has an internal thread portion at least in a part of an inner surface thereof to form a screw hole.
A plurality of (eight in the illustrated example) through holes 42b are opened in the flange 42a, and a plurality of (eight in the illustrated example) through holes 41a are opened in the floor cover plate 41 at positions corresponding to the through holes 42 b. The inner wall surface of the through hole 41a has a female screw portion at least in part thereof. Then, the fastening screw 47 as the first fastening member made of metal is screwed into the communication hole formed by the corresponding through hole 42b, 41a, and the fastening screw 47 is screwed into the female screw portion of the through hole 41a, whereby the upper portion of the first inner wall covering plate 42 is fixed to the floor covering plate 41.
As shown in fig. 3, eight fastening screws 47 are disposed at equal intervals, for example, on a flange 42a having a ring shape in plan view, and the floor cover plate 41 and the first inner wall cover plate 42 are fixed to each other above.
An exhaust pipe 43 is attached to the bottom plate 16 below the exhaust through hole 19. The exhaust pipe 43 is a pipe made of metal such as aluminum or aluminum alloy, and an endless flange 43a protruding laterally from the upper end thereof is fixed in contact with the lower surface of the bottom plate 16. The flange 43a, which is circular in plan view, is provided with eight fixing holes 43c at equal intervals in its circumferential direction, for example. The fixing hole 43c has an internal thread portion at least in a part of its inner surface to form a screw hole.
The flange 43a of the exhaust pipe 43 is in contact with the lower surface of the base plate 16 (an example of the other part of the processing container), and is fixed to maintain electrical conduction by a fastening member (not shown), such as a screw, so that the exhaust pipe 43 forms a second ground potential member having a ground potential.
A cylindrical (endless) second inner wall cover plate 46 is fitted into the inner wall surface of the circular exhaust pipe 43 in plan view, and an endless flange 46a projecting laterally from the upper end of the second inner wall cover plate 46 is fitted into a sink groove 43b formed in the upper surface of the flange 43 a. The second inner wall covering plate 46 is a plate made of metal such as aluminum or aluminum alloy. Eight cover plate through holes 46b are provided in the circular flange 46a in plan view at positions corresponding to the eight fixing holes 43c of the flange 43 a.
The flange 46a of the second inner wall cover 46 is in contact with the flange 43a of the exhaust pipe 43 and fixed by a fastening member, not shown, such as a screw, whereby the second inner wall cover 46 forms a second ground potential member having a ground potential together with the exhaust pipe 43.
An exhaust net 44 for covering the upper end opening 43d of the exhaust pipe 43 is provided on the upper surface of the flange 46a of the second inner wall cover plate 46. The air-discharge net 44 has a large number of air-discharge holes 44a, and a frame portion 44b is provided on the lower surface thereof. In the frame portion 44b, frame portion through holes 44c that communicate with the cover plate through holes 46b are provided at positions corresponding to the eight cover plate through holes 46b of the flange 46 a.
The exhaust net 44 is made of metal such as aluminum or aluminum alloy. The frame portion 44b is in contact with the flange 46a of the second inner wall cover plate 46 and fixed to the exhaust pipe 43 by a fastening structure described below, whereby the exhaust net 44 forms a second ground potential member having a ground potential together with the exhaust pipe 43 and the second inner wall cover plate 46.
In this way, the exhaust pipe 43, the second inner wall cover plate 46, and the exhaust mesh 44 all form the second ground potential member.
A connecting member 45 is disposed at a position corresponding to each frame portion through hole 44c in the upper surface of the exhaust net 44. The connecting member 45 is a connecting portion made of metal such as aluminum or aluminum alloy, and has an L-shape in side view as shown in fig. 2, and has a horizontal hole 45a and a vertical hole 45 b.
The horizontal holes 45a of the eight coupling members 45 communicate with the eight fixing holes 42c of the first inner wall cover plate 42, respectively. Then, the fastening screws 49 as the third fastening members made of metal are screwed into the corresponding eight sets of horizontal holes 45a and the fixing holes 42c, respectively, and the fastening screws 49 are screwed into the female screw portions of the fixing holes 42c, whereby the coupling members 45 are fixed to the first inner wall covering plate 42.
On the other hand, the vertical holes 45b of the eight connecting members 45 communicate with the eight frame through holes 44c of the exhaust net 44. The fastening screws 48, which are second metal fastening members, are screwed into the corresponding eight sets of vertical holes 45b, frame portion through holes 44c, cover plate through holes 46b, and fixing holes 43c, whereby the fastening screws 48 are screwed into the internal thread portions of the fixing holes 43 c. Thereby, the exhaust net 44 is fixed to the first inner wall covering plate 42 and the exhaust pipe 43 via the coupling member 45.
As described above, the first inner wall cover plate 42 is fixed to the floor cover plate 41 by the plurality of fastening screws 47, and thus the first inner wall cover plate 42 can be stably grounded as compared with a structure in which the flange 42a of the first inner wall cover plate 42 is simply placed on the upper surface of the floor cover plate 41 or the floor 16.
The exhaust net 44 and the first inner wall covering plate 42 are fixed by a fastening screw 49 via a coupling member 45, and the exhaust net 44 is fixed by a fastening screw 48 via a coupling member 45 and a second inner wall covering plate 46 to the exhaust pipe 43 fixed to the lower surface of the floor panel 16 of the lower chamber 17. This enables the first inner wall cover plate 42 to be grounded more stably. Further, the first inner wall cover plate 42 is connected to the ground potential at one end thereof via the bottom cover plate 41 and connected to the ground potential at the other end thereof via the exhaust pipe 43, and therefore can be stably grounded.
The bottom plate cover plate 41, the first inner wall cover plate 42, the second inner wall cover plate 46, and the like, which are in contact with the bottom plate 16 of the processing vessel 20 or cover a part of the exposed surface communicating with the processing chamber S, all have a ground potential. These members form a part of the counter electrode facing the mounting table 70 when a high-frequency bias voltage is applied to the mounting table 70 by the high-frequency bias power supply 83.
As the plasma processing apparatus 100 is increased in size, the applied power and the applied voltage applied by the bias high-frequency power supply 83 naturally increase, and if the grounding of the above-described members serving as the counter electrodes with respect to the bias high-frequency voltage is insufficient, a potential difference is generated between the members constituting the counter electrodes, and the discharge may become unstable.
In contrast, in the plasma processing apparatus 100, the respective members to be the counter electrodes are fixed to the bottom plate 16 of the lower chamber 17 by the coupling members 45 and the fastening screws 47, 48, and 49, and thus the respective members to be the counter electrodes and the bottom plate 16 can be electrically integrated. This can suppress the occurrence of a potential difference between the members constituting the counter electrode, and can eliminate the unstable discharge in the exhaust portion of the bottom plate 16.
In particular, in the plasma processing apparatus 100, when the first inner wall cover 42 is fixed to the inner wall surface of the exhaust through hole 19, the number of the fastening screws 47 for fixing the upper portion of the first inner wall cover 42 to the first ground potential member and the number of the fastening screws 48 and 49 for fixing the lower portion of the first inner wall cover 42 to the second ground potential member are set to be the same. This can equalize the amounts of current flowing through the respective ground potential members above and below the first inner wall cover plate 42, thereby effectively suppressing the occurrence of a potential difference in the first inner wall cover plate 42.
Here, an example of a method for manufacturing a plasma processing apparatus according to the embodiment will be described in general as follows. The manufacturing method comprises the following steps: grounding a processing container 20 constituting the plasma processing apparatus 100, mounting a high-frequency power source 56 for generating plasma and a mounting table 70 on which a substrate G can be mounted on the processing container 20, and covering at least a part of an exposed surface of the processing container 20 communicating with a processing chamber S with a metal protective member 42. Further, the method includes a step of electrically connecting the stage 70 to the high-frequency bias power supply 83.
In the step of covering with the protective member 42, one end of the protective member 42 is fastened to the first ground potential member 41 having a ground potential in contact with a part of the processing container 20 by the first fastening member 47 made of metal. The other end or the vicinity of the other end of the protective member 42 is fastened to the second ground potential members 43, 44, and 46 having a ground potential in contact with the other portion of the processing container 20 by the second fastening member 48 made of metal. More specifically, the connecting member 45 and the vicinity of the other end of the protective member 42 are fastened by the third fastening member 49, and the connecting member 45 and the second ground potential members 43, 44, and 46 are fastened by the second fastening member 48.
According to the manufacturing method of the plasma processing apparatus, the plasma processing apparatus 100 can be manufactured, and even when the plasma processing apparatus 100 is large-sized, it is possible to suppress a potential difference from being generated between members constituting the counter electrode with respect to the high-frequency bias voltage applied to the stage 70, and to realize stable discharge in the exhaust portion of the bottom plate 16.
In addition, an example of the plasma processing method according to the embodiment will be described in general as follows. In the plasma processing method, first, the processing chamber 20 constituting the plasma processing apparatus 100 is grounded. The processing container 20 includes: a mounting table 70 capable of mounting a substrate G thereon and electrically connected to a high-frequency bias power supply 83; and a metal protective member 42 which covers at least a part of an exposed surface communicating with the processing chamber S and has a ground potential. The processing container 20 has a first ground potential member 41, and the first ground potential member 41 is fastened to one end of the protective member 42 by a first fastening member 47 made of metal, and has a ground potential by being in contact with a part of the processing container 20. The processing container 20 has second ground potential members 43, 44, and 46, and the second ground potential members 43, 44, and 46 are fastened to the other end of the protective member 42 by a second fastening member 48 made of metal, and have a ground potential by being in contact with the other portion of the processing container 20.
The plasma processing method includes a step of placing a substrate G on a placing table 70 and generating plasma in a processing chamber S.
The plasma processing method further includes a step of applying a bias high-frequency voltage to the mounting table 70 so that the protective member 42, the first ground potential member 41, and the second ground potential members 43, 44, and 46 become a part of the counter electrode facing the mounting table 70.
In addition, the plasma processing method includes a step of performing plasma processing on the substrate G. Here, the plasma processing step includes an etching process and a film formation process using plasma.
According to this plasma processing method, even when the plasma processing apparatus 100 is increased in size, it is possible to (simultaneously) perform various plasma processing while suppressing the occurrence of a potential difference between the members constituting the counter electrode with respect to the bias high-frequency voltage applied to the stage 70, suppressing the occurrence of unnecessary discharge in the exhaust portion of the bottom plate 16.
The present invention is not limited to the above-described embodiments, and other embodiments may be employed as long as other components are combined with the above-described embodiments. In this regard, modifications can be made without departing from the scope of the present invention, and it can be determined as appropriate according to the application form thereof.
For example, although the plasma processing apparatus 100 illustrated in the drawings has been described as an inductively coupled plasma processing apparatus having a metal window, the plasma processing apparatus may be an inductively coupled plasma processing apparatus having a dielectric window instead of the metal window, or may be another type of plasma processing apparatus. Specifically, Electron Cyclotron resonance Plasma (ECP) or Helicon Wave Plasma (HWP) or parallel plate Plasma (CCP) can be given as examples. In addition, microwave-excited Surface Wave Plasma (SWP) can be exemplified. These plasma processing apparatuses, including ICP, can independently control ion fluxAmount and ion energy, can freely control etching shape and selectivity, and can obtain 1011To 1013cm-3High electron density to a certain degree.
Claims (15)
1. A plasma processing apparatus capable of processing a substrate in a processing chamber of a processing container in which plasma is generated, said plasma processing apparatus comprising:
a high-frequency power supply for generating plasma;
a mounting table capable of mounting the substrate thereon and electrically connected to a high-frequency bias power supply;
a metal protective member that covers at least a part of an exposed surface of the grounded processing container that communicates with the processing chamber;
a first ground potential member that is fastened to one end of the protective member by a first fastening member made of metal, and that has a ground potential by being in contact with a part of the processing container; and
and a second ground potential member which is fastened to the other end of the protective member by a second fastening member made of metal, and which has a ground potential by being in contact with the other portion of the processing container.
2. The plasma processing apparatus according to claim 1, wherein:
the number of the first fastening parts is the same as the number of the second fastening parts.
3. The plasma processing apparatus according to claim 1 or 2, wherein:
the first fastening part and the second fastening part are both fastening screws.
4. The plasma processing apparatus according to any one of claims 1 to 3, wherein:
the protection member has a ground potential, and when a high-frequency bias voltage is applied to the mounting table by the high-frequency bias power supply, the protection member, the first ground potential member, and the second ground potential member are formed as a part of a counter electrode facing the mounting table.
5. The plasma processing apparatus according to any one of claims 1 to 4, wherein:
the exposed surface is an inner wall surface of an exhaust through hole provided in a bottom plate constituting the processing container,
the protection member is an endless first inner wall cover plate that covers the inner wall surface of the exhaust through hole.
6. The plasma processing apparatus according to claim 5, wherein:
the first ground potential member is a bottom plate cover plate covering an upper surface of the bottom plate,
the second ground potential member includes at least a metal exhaust pipe provided below the exhaust through hole.
7. The plasma processing apparatus according to claim 6, wherein:
the second ground potential member further includes a metal exhaust net covering an upper end opening of the exhaust pipe.
8. The plasma processing apparatus according to claim 7, wherein:
the second ground potential member further includes an endless second inner wall cover plate that covers an inner wall surface of the exhaust pipe.
9. The plasma processing apparatus according to claim 8, wherein:
the other end of the protective member is fastened to the second ground potential member by the second fastening member via a metal coupling member having a horizontal hole and a vertical hole.
10. The plasma processing apparatus according to claim 9, wherein:
the exhaust mesh has a frame portion having a frame portion through hole,
the connecting member is placed on the upper surface of the exhaust net,
a cover plate through hole is formed in a part of the second inner wall cover plate,
the coupling member and the first inner wall covering plate are fastened by a third fastening member inserted through the horizontal hole,
wherein the second fastening member is inserted into the vertical hole, the frame portion through-hole, and the cover plate through-hole, whereby the front end of the second fastening member is fixed to the exhaust pipe, and the coupling member, the exhaust net, and the second inner wall cover plate are fastened to the exhaust pipe,
the third fastening parts are the same in number as the first fastening parts and the second fastening parts.
11. The plasma processing apparatus as claimed in claim 10, wherein:
the third fastening part is a fastening screw.
12. A method of manufacturing a plasma processing apparatus capable of processing a substrate in a processing chamber of a processing container in which plasma is generated, the method comprising:
grounding the processing container, mounting a high-frequency power source for generating plasma and a mounting table on which the substrate can be mounted, and covering at least a part of an exposed surface of the processing container, which is in communication with the processing chamber, with a metal protective member; and
electrically connecting the stage to a high-frequency bias power source,
in the covering with the protective member,
a first ground potential member having a ground potential and contacting a part of the processing container is fastened to one end of the protective member by a first metal fastening member,
the other end of the protective member is fastened to a second ground potential member having a ground potential and contacting the other portion of the processing container by a second metal fastening member.
13. The method of manufacturing a plasma processing apparatus according to claim 12, wherein:
the number of the first fastening parts and the second fastening parts is the same.
14. The method of manufacturing a plasma processing apparatus according to claim 12 or 13, wherein:
the first fastening part and the second fastening part are both fastening screws.
15. A plasma processing method of processing a substrate in a processing chamber of a processing container in which plasma is generated, the plasma processing method comprising:
a step of placing the substrate on the placing table while grounding the processing container, and generating the plasma in the processing chamber, wherein the processing container includes: a mounting table capable of mounting the substrate thereon and electrically connected to a high-frequency bias power supply; a metal protective member that covers at least a part of an exposed surface communicating with the processing chamber and has a ground potential; a first ground potential member that is fastened to one end of the protective member by a first fastening member made of metal, and that has a ground potential by being in contact with a part of the processing container; and
a second ground potential member which is fastened to the other end of the protective member by a second fastening member made of metal and which has a ground potential by being in contact with the other portion of the processing container;
applying a high-frequency bias voltage to the mounting table to form the protective member as a part of a counter electrode facing the mounting table; and
and a step of subjecting the substrate to plasma treatment.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020189547A JP7500397B2 (en) | 2020-11-13 | 2020-11-13 | Plasma processing apparatus, its manufacturing method, and plasma processing method |
| JP2020-189547 | 2020-11-13 |
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| CN114496701A true CN114496701A (en) | 2022-05-13 |
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| JP (1) | JP7500397B2 (en) |
| KR (1) | KR102638030B1 (en) |
| CN (1) | CN114496701A (en) |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090104679A (en) * | 2008-03-31 | 2009-10-06 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus |
| KR20160073305A (en) * | 2014-12-16 | 2016-06-24 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus |
| CN106328473A (en) * | 2015-07-01 | 2017-01-11 | 东京毅力科创株式会社 | Plasma processing apparatus and exhaust structure thereof |
| CN111463097A (en) * | 2019-01-22 | 2020-07-28 | 东京毅力科创株式会社 | Plasma processing apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| JP4091445B2 (en) | 2003-01-21 | 2008-05-28 | 東京エレクトロン株式会社 | Plasma processing apparatus and plasma processing method |
-
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- 2020-11-13 JP JP2020189547A patent/JP7500397B2/en active Active
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- 2021-11-01 TW TW110140519A patent/TW202233023A/en unknown
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090104679A (en) * | 2008-03-31 | 2009-10-06 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus |
| KR20160073305A (en) * | 2014-12-16 | 2016-06-24 | 도쿄엘렉트론가부시키가이샤 | Plasma processing apparatus |
| CN106328473A (en) * | 2015-07-01 | 2017-01-11 | 东京毅力科创株式会社 | Plasma processing apparatus and exhaust structure thereof |
| JP2017017180A (en) * | 2015-07-01 | 2017-01-19 | 東京エレクトロン株式会社 | Plasma processing apparatus and exhaust structure used therefor |
| CN111463097A (en) * | 2019-01-22 | 2020-07-28 | 东京毅力科创株式会社 | Plasma processing apparatus |
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| KR102638030B1 (en) | 2024-02-16 |
| JP2022078684A (en) | 2022-05-25 |
| KR20220065683A (en) | 2022-05-20 |
| TW202233023A (en) | 2022-08-16 |
| JP7500397B2 (en) | 2024-06-17 |
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