JP2008027936A - Vacuum processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum processing apparatus in which precision of processing is enhanced for a shunt of processing gas by examining the flow rate of processing gas with high precision. <P>SOLUTION: The vacuum processing apparatus for processing a sample arranged in a processing chamber by supplying processing gas through a plurality of passages into the processing chamber in a vacuum container where the internal pressure is reduced comprises a shunt for adjusting the ratio at which the gas of different flow rate is supplied to the plurality of passages, and a function for performing examination of the shunt by using the pressure variation rate in the processing chamber when the gas is supplied by stopping discharge of gas under such a state as the shunt and the passage can conduct the gas at a maximum flow rate and the pressure variation rate in the processing chamber when the gas is supplied only from each of the plurality of passages under such a state as the shunt can conduct the gas at a predetermined shunt ratio. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a vacuum processing apparatus for processing a substrate-like sample such as a semiconductor wafer in a processing chamber in a vacuum vessel, and in particular, vacuum processing for processing a sample by supplying gases having different compositions from a plurality of locations in the processing chamber. Relates to the device.

  Conventionally, in the process of manufacturing a semiconductor device, in order to perform desired microfabrication on the surface of a substrate to be processed such as a semiconductor wafer or an LCD substrate, the reactivity introduced into the processing chamber by placing the substrate in the processing chamber inside the vacuum vessel 2. Description of the Related Art Apparatuses that use plasma obtained by converting gas into plasma with electromagnetic waves are widely used.

  In the manufacture of such a semiconductor device, it is required that all semiconductor devices obtained by manufacturing have the same performance. Therefore, in an apparatus for manufacturing a semiconductor device, uniform processing is performed on a sample such as a substrate. For this purpose, it is required to form a uniform plasma on the surface of the sample. In order to realize this, it is necessary to distribute the introduced gas to a uniform concentration over the entire surface to be processed of the sample, and to quickly exhaust the gas while maintaining a uniform concentration over the entire processing surface.

  In recent years, the outer diameter of a semiconductor wafer, which is a sample used for the above-mentioned processing, has become larger, and the gas flow and the density distribution of particles in the plasma are more uniform at the center and outer periphery of the semiconductor wafer than before. There is a problem that is difficult to obtain. Along with this, it is required to perform more uniform processing over a wide area on the semiconductor wafer. In order to achieve this, by individually adjusting the amount of processing gas supplied to the center and outer periphery of the sample, the gas flow and particles in the space above each region on the center side and outer periphery side of the sample A technique for realizing uniform processing of a sample by adjusting the properties of the processing gas according to the distribution is considered.

  As a technique for adjusting according to the supply location of such processing gas, a flow control device (mass flow controller) is arranged on each independent gas supply line, and these gas supply lines are arranged at the center portion and the outer peripheral edge portion. It is conceivable to supply each of them.

  However, supplying gas to a single processing chamber using a gas supply line having an independent flow rate control device not only leads to an increase in the size of the semiconductor manufacturing facility and a rise in the facility, but also maintenance and the like. Will take more work. Therefore, it is a desirable method to branch from a gas supply line having one flow rate control device to each gas supply line corresponding to a plurality of gas supply ports and to control the diversion ratio.

On the other hand, in such a gas supply technique, it is necessary to adjust the diversion device for diverting the gas so that the diversion device accurately diverts the gas at a desired ratio, that is, calibration. Examples of such a calibration method for a flow control device include Patent Document 1 (Japanese Patent Laid-Open No. 6-53103) and Patent Document 2 (Japanese Patent Laid-Open No. 7-86268). Examples of the process gas diversion supply method using a flow divider include Patent Document 3 (Japanese Patent Laid-Open No. 2004-5308), Patent Document 4 (Japanese Patent Laid-Open No. 2005-11258), and Patent Document 5 (Japanese Laid-Open Patent Publication No. 2005). -56914).

JP-A-6-53103 JP 7-86268 A JP 2004-5308 A JP 2005-11258 A JP 2005-56914 A

  In the above-described prior art, the flow divider which is a device for diverting is adjusted so that the flow rate of each gas line branched into two has a desired diversion ratio. In order to perform such adjustment to achieve a desired diversion ratio, the conventional technique measures the flow rate of the flow control device before diversion and the value of the flow rate measuring device attached to each line after diversion. The flow rate is controlled.

  As for the shunt, generally, as shown in the above-mentioned Patent Document 4, a measure for improving the reliability is provided by the unit of the shunt itself. However, for example, a manufacturer of a plasma etching apparatus often purchases a shunt unit from the outside and uses it by assembling it, and there is a demand for objectively confirming the reliability of the shunt.

  An object of the present invention is to provide a vacuum processing apparatus in which the processing gas flow rate is improved and the processing accuracy is improved by performing the processing gas flow rate verification with high accuracy.

  The above object is a vacuum processing apparatus for supplying a processing gas to a processing chamber in a vacuum chamber whose pressure is reduced via a plurality of paths and processing a sample disposed in the processing chamber, wherein the plurality of paths A flow divider that adjusts the ratio of distributing the gas at different flow rates to each other, the flow divider and the path to be in a state in which the gas at the maximum flow rate can flow, the exhaust of the processing chamber is stopped, and the process When the gas is supplied to the chamber, the pressure change rate in the processing chamber and the flow divider are set in a state in which the gas can flow at a predetermined diversion ratio, and the processing chamber enters the processing chamber only from each of the plurality of paths. This is achieved by a vacuum processing apparatus having a function of performing verification of the flow divider using the pressure change rate in the processing chamber when the gas is supplied.

  Further, the vacuum processing apparatus supplies processing gas to a processing chamber in a vacuum chamber whose inside is depressurized through a plurality of paths, and processes a material disposed in the processing chamber, which is different from the plurality of paths. A flow divider for adjusting a ratio of distributing the gas at a flow rate, and at least one of the flow divider and the path is allowed to flow the gas at a maximum flow rate, and the exhaust of the processing chamber is stopped, When the gas is supplied to the processing chamber from at least one path, the rate of change in pressure in the processing chamber and the flow divider are set in a state in which the gas can flow at a predetermined diversion ratio. This is achieved by a vacuum processing apparatus having a function of performing the verification of the flow divider using the rate of change in pressure in the processing chamber when the gas is supplied into the processing chamber only from the side.

  Furthermore, each detection of the rate of change of the pressure is achieved by detecting the processing chamber under substantially the same conditions. Furthermore, each detection of the rate of change of the pressure is achieved by detecting each other in succession.

  Furthermore, the supply of the gas at the maximum flow rate is achieved by performing the flow rate adjusting means arranged in the flow divider in a fully open state.

  Furthermore, two exhaust paths connected to each of the two paths between the shunt and the processing chamber are provided, and when the shunt is adjusted to a predetermined shunt ratio, any one path is used. This is achieved by supplying the gas to the processing chamber and discharging the gas from another path through an exhaust path connected thereto.

  ADVANTAGE OF THE INVENTION According to this invention, the vacuum processing apparatus which improved the precision of the process can be provided by performing the test | inspection of the gas flow rate for a process with high precision about the shunt of the gas for a process.

  Embodiments of the present invention will be described below with reference to the drawings.

  FIG. 1 is a diagram showing the configuration of a plasma etching apparatus. In FIG. 1, 7 is an antenna for introducing radio waves in the UHF or VHF band, 8 is a solenoid coil for generating a magnetic field, 9 is a processing chamber, 10 is a sample stage on which a wafer as a sample is placed, and 11 is a sample stage. It is a drive mechanism that moves up and down. One side of the processing chamber 9 is connected to the flow rate control device 2, the flow divider 4, and the gas supply source 1, and the other side is connected to the pressure gauge 12 and the exhaust pump 14. A central processing unit and storage means are connected in the controller 15. The operation of the apparatus is performed on the display monitor 16.

  Due to the action of the electromagnetic wave introduced through the dielectric window member introduced from the antenna 7 and transmitting the UHF or VHF band radio wave and the magnetic field by the solenoid coil 8 wound around the outside of the processing chamber 9, Electrons are efficiently energized and a high-density plasma is generated by electron cyclotron resonance. After the plasma is generated, the wafer is adsorbed on the sample stage 10. After the wafer is adsorbed on the sample stage 10, a high frequency bias voltage is further output from the high frequency power supply to start the process.

  The process gas piping system in this apparatus includes a gas introduction line 17-1 for flowing process gas from the gas supply source 1, a flow rate control device 2 for keeping the process gas flow rate constant, and a process gas flowing from the gas supply source 1. A valve 3 to be shut off, a flow divider 4 for branching the gas introduction line 17-1 into two gas lines, a first gas introduction line 17-2 for flowing the gas branched into two lines by the flow divider 4; The second gas introduction line 17-3, the first gas exhaust line 17-4 for exhausting the first gas introduction line 17-2 on one side divided into two systems, and the second gas introduction line on the other side one system A second gas exhaust line 17-5 for exhausting 17-3 is provided. During the process, the flow rate is set in the flow rate control device 2, the flow dividing ratio is set in the flow divider 4, and the process gas is supplied to the processing chamber 9 via the first gas introduction line 17-2 and the second gas introduction line 17-3. Introduce.

  2 to 5 are operation outline diagrams of the variable valves built in the gas lines in the flow divider 4. In the flow divider 4, a flow divider built-in controller 23 is provided in each line so that a desired flow division ratio is set based on information of the flow rate measuring device 22 attached to each line in the flow divider 4. Control the variable valve. A measuring instrument such as a pressure measuring instrument may be attached instead of the flow measuring instrument 22.

  FIG. 2 is a schematic diagram showing the operation of the variable valve when the flow dividing ratio is set in the flow divider 4. At this time, the flow controller 22 is attached to each line in the flow divider 4 by the flow divider built-in controller 23. Based on this information, a calculation is performed so that a desired diversion ratio is obtained, a movement signal to a predetermined position is sent to the seal portion drive mechanism 18 of the variable valve, and the seal portion drive portion 19 and the seal portion 21 are moved up and down to flow into the pipe. The flow rate is being controlled.

FIG. 3 is an operation schematic diagram of the variable valve when the shunt 4 is fully closed. At this time, since the desired shunt ratio is not set in the shunt 4, the shunt divider built-in controller 23 Without calculating on the basis of the information of the flow rate measuring device 22 attached to each line in the flow divider 4, a movement signal to the fully closed position is sent to the seal portion drive mechanism 18 of the variable valve, and the seal portion drive portion 19 and The seal portion 21 is moved to a position where the gas flow path is blocked, so that the gas cannot flow.

  FIGS. 4 and 5 are operation schematic diagrams of the variable valve when the shunt 4 is fully opened. Since the desired shunt ratio is not set in the shunt 4 at this time, the shunt built-in controller 23 Without a calculation based on the information of the flow rate measuring device 22 attached to each line in the flow divider 4, a movement signal to the fully open position is sent to the seal portion drive mechanism 18 of the variable valve, and the seal portion drive portion 19 and The seal portion 21 is moved to a position where the flow of the process gas is not obstructed (FIG. 4) or to a position where the obstruction of the flow of the process gas is minimized (FIG. 5), so that the gas with the maximum flow rate can flow. And

  The flow of verification of the shunt 4 will be described below. The shunt verification execution button in the sequence start screen shown in FIG. 6 is pushed. This starts the shunt verification sequence. First, the processing chamber 9 and the gas lines 17-1, 17-2, 17-3 are exhausted (S1). Next, the flow rate of the gas introduction line 17-1 is set in the flow rate control device 2, and the diversion ratio between the first gas introduction line 17-2 and the second gas introduction line 17-3 is set in the flow divider 4 (S2).

Next, the gas shutoff valve 3, the first gas introduction valve 5-1, and the second gas exhaust valve 6-2 are opened to introduce one process gas into the processing chamber 9, while exhausting the other process gas. (S3). Next, the processing chamber exhaust valve 13 is closed to seal the processing chamber 9 (S4). Next, the pressure fluctuation in the processing chamber 9 is measured by the pressure gauge 12, the flow rate is calculated by the elapsed time and the pressure value by the controller 15, and the elapsed time, the pressure value, and the flow rate are stored (S5). Next, the gas shut-off valve 3, the first gas introduction valve 5-1, and the second gas exhaust valve 6-2 are closed (S6). In S1 to S6, the flow rate of one process gas line is measured.

  Next, the processing chamber 9 and the gas lines 17-1, 17-2, 17-3 are exhausted again (S7). Next, the flow rate of the gas introduction line 17-1 in the flow rate control device 2, and the flow dividing ratio between the first gas introduction line 17-2 and the second gas introduction line 17-3 in the flow divider 4 (the flow division ratio set in S2 above). (Similar values) are set (S8). Next, while opening the gas shutoff valve 3, the second gas introduction valve 5-2, and the first gas exhaust valve 6-1 to introduce the process gas on one side into the processing chamber 9, the other process gas is exhausted. (S9).

  Next, the processing chamber exhaust valve 13 is closed to seal the processing chamber 9 (S10). Next, the pressure fluctuation in the processing chamber 9 is measured by the pressure gauge 12, the flow rate is calculated by the elapsed time and the pressure value by the controller 15, and the elapsed time, the pressure value, and the flow rate are stored (S11). The temperature and the state of the surface of the processing chamber wall during this measurement are substantially the same as those during the measurement of S5. Next, the gas cutoff valve 3, the second gas introduction valve 5-2, and the first gas exhaust valve 6-1 are closed (S12). In S7 to S12, the flow rate of the other process gas line is measured.

  Next, the processing chamber 9 and the gas lines 17-1, 17-2, 17-3 are exhausted again (S13). Next, the two variable valves in the flow divider 4 are fully opened (S14). In the setting of the flow divider 4 here, any one variable valve in the flow divider 4 may be fully opened. The gas cutoff valve 3, the first gas introduction valve 5-1, and the second gas introduction valve 5-2 are opened to introduce the process gas into the processing chamber 9 (S15).

  Next, the processing chamber exhaust valve 13 is closed to seal the processing chamber 9 (S16). Next, the pressure fluctuation in the processing chamber 9 is measured by the pressure gauge 12, the flow rate is calculated by the elapsed time and the pressure value by the controller 15, and the elapsed time, the pressure value, and the flow rate are stored (S17). The temperature at the time of measurement and the state of the surface of the processing chamber wall surface are substantially the same as those at the time of measurement of S5 and S11. Next, the gas cutoff valve 3, the first gas introduction valve 5-1, and the second gas introduction valve 5-2 are closed (S18). In S13 to S18, the total flow rate of the two process gas lines is measured. Further, in order to exhaust the processing chamber and the gas line, the processing chamber exhaust valve 13 is opened to exhaust the processing chamber 9 and the gas lines 17-1, 17-2, 17-3 (S19).

  Next, the shunt 4 is verified from the measurement result. The controller 15 calculates a diversion ratio of the gas flowing from the flow divider 4 to the processing chamber 9 via the first gas introduction line 17-2 and the second gas introduction line 17-3 from the flow rates stored in S5 and S11 ( S20). The value is compared with the set desired shunt ratio, and if the difference is within a certain allowable value, it is determined that the shunt 4 is normal, and if the allowable value is exceeded, the shunt 4 is abnormal. Judge that there is. Here, the allowable value is a value that can be arbitrarily set. The result of the determination is displayed on the display monitor 16, and OK is displayed if the determination is normal, and NG is displayed if the determination is abnormal (S21). FIG. 7 shows a display example.

  Next, the controller 15 compares the flow rate stored in S5 and S11 with the flow rate stored in S17, and if the difference is within a certain range, the flow divider 4 is normal. If the allowable value is exceeded, it is determined that the shunt 4 is abnormal. Here, the allowable value is a value that can be arbitrarily set. The result of the determination is displayed on the display monitor 16, and OK is displayed if the determination is normal, and NG is displayed if the determination is abnormal (S22). FIG. 7 shows a display example.

  Further, in order to be able to confirm the above-mentioned verification result at all times, the controller 15 calculates the diversion ratio, the difference between the measured flow rate and the set flow rate, the sum of the flow rate stored in S5 and S11 and the difference between S17, The allowable value and the normal / abnormal judgment result are stored (S23). In order for the user to obtain details of the measurement results, the elapsed time, pressure value, and flow rate values stored in S5, S11, and S17 may be displayed on the display monitor 16.

  As a case where it is determined that there is an abnormality by the above-described verification, the piping of the first gas introduction line 17-2 and the second gas introduction line 17-3 may be clogged, the variable valve in the flow divider 4 and the abnormality of the flow meter, etc. . When diagnosing a plurality of diversion ratios, the above-described sequence (S1 to S12) is repeated, the flow rate is calculated by the controller 15, and the diversion ratio and the flow rate are compared as described above to obtain the desired diversion ratio and flow rate. Confirm that the gas has been introduced.

  In the above-described embodiment, the case where the flow divider 4 performs the diversion to the two gas lines is shown, but the present invention can also be applied to the three gas lines. In that case, first, in a state where the flow dividing ratio is set in the flow divider 4, gas is introduced into the processing chamber 9 for each divided gas line, pressure fluctuation is measured, and the flow rate is calculated. A diversion ratio is calculated from the measured flow rate. Next, the variable valve of at least one gas line in the flow divider 4 is fully opened, the gas is introduced into the processing chamber 9, the pressure fluctuation is measured, and the flow rate is calculated. The shunt ratio calculated above is compared with the set shunt ratio, the sum of the flow rates of the three gas lines when the shunt ratio is set for the shunt 4 calculated above, and the at least one gas line in the shunt 4 is set. By comparing the flow rate when the variable valve is fully opened, the flow divider 4 can be verified.

  In the above-described sequence, the flow rate of gas introduced through the process gas line 17-1 is set to 500 ml / min, and the diversion ratio between the first gas introduction line 17-2 and the second gas introduction line 17-3 is set to 3: 2. 3 shows a specific example of a flow for verifying the shunt ratio performed when the shunt verification execution button on the sequence activation screen shown in FIG. 3 is pressed.

First, in the flow rate measurement (S1 to S6) of the first gas introduction line 17-2 when setting the flow ratio to the flow divider 4, the flow rate control device 2 has a flow rate of 500 ml / min and the flow divider 4 has the first gas. A split flow ratio of 3: 2 is set between the introduction line 17-2 and the second gas introduction line 17-3, the process gas is introduced into the processing chamber 9, and the pressure fluctuation in the processing chamber is measured. Calculate the flow rate. Let the calculated flow rate be A ml / min.

Next, in the flow rate measurement (S7 to S12) of the second gas introduction line 17-3 when the flow dividing ratio is set in the flow divider 4, the flow rate control device 2 has a flow rate of 500 ml / min, and the flow divider 4 has the first flow rate. The split flow ratio 3: 2 of the gas introduction line 17-2 and the second gas introduction line 17-3 is set, the process gas is introduced into the processing chamber 9, the pressure fluctuation in the processing chamber is measured, the elapsed time and the pressure value To calculate the flow rate. Let the calculated flow rate be B ml / min.

  Next, in the flow rate measurement (S13 to S18) of the first and second gas introduction lines 17-2 and 17-3 when fully opening the flow divider 4, the flow rate control device 2 is set to a flow rate of 500 ml / min. The two variable valves in the flow divider 4 are fully opened, the process gas is introduced into the processing chamber 9, the pressure fluctuation in the processing chamber is measured, and the flow rate is calculated from the elapsed time and the pressure value. The calculated flow rate is Cml / min.

Using the flow rate stored by the controller 15 as described above, it is verified whether the diversion ratio A: B is the desired diversion ratio 3: 2. As a method of the test, for example, an allowable value is 2.8 to 3.2:
When the measured flow rate is A = 310 ml / min and B = 190 ml / min, the diversion ratio is A: B = 3.1: 1.9, which is within the allowable value. The flow divider 4 determines that the process gas is flowing into the processing chamber at a desired flow division ratio, and displays “OK” on the display monitor 16. When the measured flow rate A = 350 ml / min and B = 150 ml / min, A: B = 3.5: 1.5, which is a value exceeding the allowable value. Then, “NG” is displayed on the display monitor 16. Moreover, the flow rate when the two variable valves in the flow divider 4 are fully opened is the sum of the flow rates A ml / min and B ml / min when the controller 15 controls the desired diversion ratio stored above. Test for C ml / min.

For example, when the allowable values are C-20 to C + 20 ml / min and the measured flow rates are A = 305 ml / min, B = 205 ml / min, and C = 500 ml / min, A ml / min and B ml are used. Since the sum of / min is within the allowable value at 510 ml / min, it is determined by the flow divider 4 that the process gas is flowing into the processing chamber at a desired flow rate, and “OK” is displayed on the display monitor 16. indicate. When the measured flow rate is A = 330 ml / min, B = 220 ml / min, and C = 500 ml / min, the sum of A ml / min and B ml / min is 550 ml / min.
Since the value exceeds the allowable value in min, it is determined that there is an abnormality in the flow divider 4 and “NG” is displayed on the display monitor 16.

  When diagnosing a plurality of diversion ratios, the above-described sequence (S1 to S12) is repeated, the flow rate is calculated by the controller 15, and the diversion ratio and the flow rate are compared as described above to obtain the desired diversion ratio and flow rate. Confirm that the gas has been introduced.

1 is a schematic view of a plasma etching apparatus according to an embodiment of the present invention. It is a longitudinal cross-sectional view explaining the outline of a structure of the variable valve based on the Example shown in FIG. It is a longitudinal cross-sectional view explaining the outline of a structure of the variable valve based on the Example shown in FIG. It is a longitudinal cross-sectional view explaining the outline of a structure of the variable valve based on the Example shown in FIG. It is a longitudinal cross-sectional view explaining the outline of a structure of the variable valve based on the Example shown in FIG. It is a schematic diagram which shows the screen which performs the test sequence of the shunt ratio of the shunt according to the embodiment shown in FIG. It is a figure which shows the screen which displays the result of having performed the test of the shunt ratio of the shunt of the plasma etching apparatus which concerns on the Example shown in FIG. It is a flowchart which shows the flow of the procedure which test | inspects the shunt ratio of the shunt of the plasma etching apparatus concerning the Example shown in FIG. It is a flowchart which shows the flow of the procedure which test | inspects the shunt ratio of the shunt of the plasma etching apparatus concerning the Example shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Gas supply source, 2 ... Flow control apparatus, 3 ... Gas cutoff valve, 4 ... Shunt, 5-1 ... 1st gas introduction valve, 5-2 ... 2nd gas introduction valve, 6-1 ... 1st gas Exhaust valve, 6-2 ... second gas exhaust valve, 7 ... antenna, 8 ... solenoid coil, 9 ... processing chamber, 10 ... sample stage, 11 ... sample stage drive mechanism, 12 ... pressure gauge, 13 ... processing chamber exhaust valve , 14 ... exhaust pump, 15 ... control controller, 16 ... display monitor, 17-1 ... gas introduction line, 17-2 ... first gas introduction line, 17-3 ... second gas introduction line, 17-4 ... first Gas exhaust line,
17-5: second gas exhaust line, 18: seal portion drive mechanism, 19 ... seal portion drive portion, 20 ... leaf spring, 21 ... seal portion, 22 ... flow rate measuring device, 23 ... controller with built-in flow divider.

Claims (6)

  A vacuum processing apparatus for supplying a processing gas to a processing chamber in a vacuum chamber whose pressure is reduced via a plurality of paths and processing a sample disposed in the processing chamber, wherein the plurality of paths have different flow rates. A flow divider that adjusts a ratio of distributing the gas, and the flow divider and the path are set in a state in which the gas having a maximum flow rate can flow, the exhaust of the processing chamber is stopped, and the gas is supplied to the processing chamber. The gas was supplied into the processing chamber only from each of the plurality of paths, with the rate of change of pressure in the processing chamber when the gas was supplied and the flow divider being allowed to flow the gas at a predetermined diversion ratio. A vacuum processing apparatus having a function of performing verification of the flow divider using the pressure change rate in the processing chamber.   A vacuum processing apparatus that supplies processing gas to a processing chamber in a vacuum chamber whose inside is depressurized through a plurality of paths, and processes a material disposed in the processing chamber, wherein the plurality of paths have different flow rates. A flow divider for adjusting the gas distribution ratio, and at least one of the flow divider and the path is configured to allow the flow of the gas at the maximum flow rate, and the exhaust of the processing chamber is stopped, and at least one of the flow divider and the flow path is stopped. When the gas is supplied to the processing chamber from one path, the rate of change in pressure in the processing chamber and the flow divider are set in a state in which the gas can flow at a predetermined diversion ratio, and only from each of the plurality of paths. A vacuum processing apparatus having a function of verifying the flow divider using a pressure change rate in the processing chamber when the gas is supplied into the processing chamber.   The vacuum processing apparatus according to claim 1, wherein each of the pressure change rates is detected under substantially the same conditions in the processing chamber.   The vacuum processing apparatus according to any one of claims 1 to 3, wherein each of the detections of the rate of change in pressure is detected continuously.   The vacuum processing apparatus according to any one of claims 1 to 4, wherein the supply of the gas at the maximum flow rate is performed with a flow rate adjusting means disposed in the shunt being fully opened. Two exhaust paths connected to each of the two paths between the flow divider and the processing chamber are provided, and when the flow divider is adjusted to a predetermined diversion ratio, the processing chamber is connected from any one path. The vacuum processing apparatus according to any one of claims 1 to 5, wherein the gas is supplied to the gas and exhausted from another path through an exhaust path connected thereto.

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