KR20210125971A - Gas supply system, substrate processing system and gas supply method - Google Patents

Abstract

Provided is a gas supply system improved to execute a process by controlling a plurality of gases. As a gas supply system for supplying gas to a chamber of a substrate processing device, the gas supply system comprises: a first flow path for connecting a first gas source of a first gas to the chamber; a second flow path for connecting a second gas source of a second gas to the first flow path; a control valve provided in the second flow path and controlling a flow rate of the second gas to a predetermined amount; an orifice provided at the end of the second flow path downstream of the control valve; an on-off valve provided at a connection point of the first flow path and the end of the second flow path and controlling the timing of supplying the second gas to be supplied from an outlet of the orifice to the first flow path; a discharge mechanism connected to a flow path between the control valve and the orifice in the second flow path and discharging the second gas; and a controller for operating the control valve, the on-off valve, and the discharge mechanism.

Description

GAS SUPPLY SYSTEM, SUBSTRATE PROCESSING SYSTEM AND GAS SUPPLY METHOD

The present invention relates to a gas supply system, a substrate processing system, and a gas supply method.

Patent Document 1 discloses a pressure-type flow rate control device. A pressure type flow control device includes a control valve for controlling a flow rate of gas to a predetermined amount, an orifice provided downstream of the control valve, a temperature sensor and a pressure sensor disposed between the control valve and the orifice, a sensor detection value and a neck A control circuit is provided for controlling the opening/closing amount of the control valve based on the sign value. In the pressure-type flow rate control device, the temperature-corrected flow rate is calculated based on the sensor detection value by the control circuit. Then, the calculated flow rate and the target value are compared by the control circuit, and the control valve is controlled so that the difference becomes small.

Patent Document 1: International Publication No. 2015/064035

By the way, in a substrate processing process, it may process using several gas. For example, there are cases where gases from a plurality of gas sources are merged and supplied to the chamber, or the gas used for each step is changed.

In order to realize such a process, for example, as shown in FIG. 28, the on-off valve 102 is disposed on the downstream side of the pressure type flow rate control device FC3 that controls the gas flow rate of the gas supply source 100, , it is contemplated to use the on/off valve 102 to select the gas to be mixed, or to change the gas supplied to the chamber. For example, as shown in FIG. 29 , the flow path 104 of the second gas is merged with the flow path 103 of the first gas at the connection point 105 and supplied to the chamber as a mixed gas. I think.

However, in the structure shown in FIG. 28, when the on-off valve 102 is closed, gas is stored in the flow path between the orifice 101 and the on-off valve 102 among the flow paths 103 . Since the pressure and flow rate of such residual gas cannot be controlled, when the on-off valve 102 is opened, the gas is supplied to the chamber in a state in which the flow rate is not controlled. In addition, in the configuration shown in FIG. 29 , when the pressure of the first gas flowing through the flow path 103 is greater than the pressure of the second gas flowing through the flow path 104 , the second gas enters the opening/closing valve 102A and the connection point ( 105), there is a possibility that it may take time to fill the flow path. As such, in order to control a plurality of gases to perform a process, the gas supply system has room for improvement.

A gas supply system according to an aspect of the present invention is a gas supply system for supplying a gas to a chamber of a substrate processing apparatus, and includes a first flow path for connecting a first gas source of a first gas and a chamber, and a second gas supply system. a second flow path connecting the second gas source and the first flow path; a control valve provided in the second flow path to control the flow rate of the second gas to a predetermined amount; , between the control valve and the orifice in the second flow path, and an on/off valve provided at a connection point between the end of the first flow path and the second flow path to control the timing of supplying the second gas supplied from the outlet of the orifice to the first flow path. An exhaust mechanism connected to the flow path of

In this gas supply system, an orifice is provided downstream of a control valve and is provided at the terminal of a 2nd flow path, and an on-off valve is provided at the connection location of the terminal of a 1st flow path and a 2nd flow path. That is, since the orifice and the on/off valve are disposed at the connection point between the ends of the first flow path and the second flow path, the flow path from the orifice to the on/off valve can be minimized. Thereby, when an on-off valve is made open, it can avoid that the gas stored in the flow path from an orifice to an on-off valve is supplied to a chamber in the state which is not flow-controlled. Moreover, since the on-off valve is provided at the connection point of the terminal of the 1st flow path and the 2nd flow path, the flow path from an on-off valve to a connection point can be minimized. Accordingly, even when the pressure of the gas flowing through the first flow path is greater than the pressure of the gas flowing through the second flow path, it is possible to avoid taking time for the second gas to fill the flow path between the on-off valve and the connection point. Further, since the exhaust mechanism for exhausting the second gas is connected to the flow passage between the control valve and the orifice in the second flow passage, for example, the on-off valve is closed and the exhaust mechanism is operated to supply the chamber. In a state in which the valve is stopped, the flow path between the control valve and the orifice may be filled with a gas having a predetermined target pressure. For this reason, since the time until the flow path between the control valve and the orifice is filled with gas of a predetermined target pressure after opening the on-off valve can be omitted, the responsiveness is excellent.

In one embodiment, the on-off valve may have a sealing member press-contacted to the orifice so as to seal the outlet of the orifice during closing control, and spaced apart from the orifice during opening control. By configuring in this way, the outlet of the orifice can be opened and closed.

In one embodiment, the on-off valve includes: a cylinder for fixedly supporting the sealing member; a biasing member for elastically biasing the cylinder in a direction in which the sealing member is press-contacted to the orifice; and a direction opposite to the pressure-contacting direction for moving the cylinder You may have a drive part. When configured in this way, the driving unit can move the sealing member press-contacted to the orifice via the cylinder by the biasing member in a direction opposite to the press-contacting direction to open the outlet of the orifice.

In one embodiment, the orifice and the on/off valve may be disposed downstream of an inlet block provided in the chamber. By locating the orifice and the on/off valve on the downstream side of the inlet block, that is, on the chamber side relative to the inlet block, gas control can be performed at a position closer to the chamber compared to the case where the orifice is located on the upstream side of the inlet block. Accordingly, it is possible to improve the responsiveness of the gas supplied to the chamber.

In one embodiment, the orifice and the on/off valve may be arranged on the upstream side of the inlet block provided in the chamber. In the case of such a configuration, the components positioned from the control valve to the on/off valve can be unitized, so that handling of each component becomes easy.

In one embodiment, the exhaust mechanism includes a small exhaust flow path connected to the second flow path and having a first displacement, and a large exhaust flow path connected to the second flow path and having a second displacement greater than the first displacement. ) You may have an exhaust flow path, and the 1st exhaust valve provided in the large exhaust flow path and controlling the exhaust timing. In this configuration, since the exhaust timing can be controlled for each exhaust flow path, the pressure can be finely adjusted in the flow path between the control valve and the orifice.

In one embodiment, the exhaust mechanism may further include a second exhaust valve provided in the small exhaust flow path to control exhaust timing. In this configuration, since the exhaust timing can be controlled for each exhaust flow path, pressure can be adjusted more delicately in the flow path between the control valve and the orifice.

In one embodiment, the exhaust mechanism may be connected to the orifice side in the flow path between the control valve and the orifice. In this configuration, as compared with the case where the exhaust mechanism is connected to the control valve side in the flow path between the control valve and the orifice, the error in pressure adjustment can be reduced.

In one embodiment, the gas supply system further includes a pressure detector for detecting the pressure of the second gas in the flow path between the control valve and the orifice in the second flow path, wherein the pressure detector includes the control valve and the orifice. It may be located on the orifice side in the flow path between them, and the control valve may control the flow volume of 2nd gas based on the detection result of a pressure detector. In this configuration, as compared with the case where the pressure detector is located on the control valve side in the flow path between the control valve and the orifice, it is possible to reduce the error in flow rate adjustment.

In one embodiment, the gas supply system further includes a temperature detector for detecting a temperature of the second gas in a flow path between the control valve and the orifice in the second flow path, wherein the temperature detector includes the control valve and the orifice. It may be located on the orifice side in the flow path between them, and the control valve may control the flow volume of 2nd gas based on the detection result of a temperature detector. In the case of such a configuration, as compared with the case where the temperature detector is located on the control valve side in the flow path between the control valve and the orifice, it is possible to reduce the error in flow rate adjustment.

In one embodiment, when supplying the second gas of the target flow rate to the first flow path at the target supply timing, the controller operates the exhaust mechanism while closing the on-off valve in a predetermined period until the target supply timing is reached. In the operating state, the control valve may be controlled to flow the second gas of the target flow rate, and the on-off valve may be opened when the target supply timing has come. By configuring in this way, the time until the flow path between the control valve and the orifice is filled with the gas of a predetermined target pressure after the on-off valve is opened can be omitted, so that the responsiveness is excellent.

In one embodiment, the gas supply system further includes a control unit for acquiring a control value of the control valve, wherein the control valve includes a valve body, a valve seat, and expands according to a control voltage, and includes the valve body and the valve seat. It may have a piezoelectric element which opens and closes a control valve by approaching or separating, and a control part may determine opening/closing of an on-off valve based on the control voltage of a piezoelectric element. Although the gas supply operation can be confirmed by the control pressure value, it is difficult to determine the normal operation of the gas supply when a constant flow rate is output at all times. A method of determining the opening/closing of an on-off valve by providing a magnetic proximity sensor or the like in the actuator of the on-off valve is also conceivable, but the number of parts increases and the configuration becomes complicated. In this gas supply system, the piezoelectric element of the control valve operates so as to follow the opening and closing of the on-off valve. For this reason, by using the control voltage of the piezoelectric element of a control valve, opening/closing of a valve can be easily judged.

In one embodiment, the control unit may compare the acquired control voltage with a reference value of a predetermined control voltage, and output an alarm according to the comparison result. By configuring in this way, an alarm can be output when the on-off valve is not performing a predetermined operation.

A substrate processing system according to another aspect of the present invention includes the above-described gas supply system, and can process a substrate using the above-described gas supply system.

A gas supply method according to another aspect of the present invention includes: a first flow path connecting a first gas source of a first gas and a chamber; a second flow path connecting a second gas source of a second gas and the first flow path; A control valve provided in the second flow path to control the flow rate of the second gas by a predetermined amount, an orifice downstream of the control valve and provided at the end of the second flow path, and at a connection point between the ends of the first flow path and the second flow path an on/off valve provided to control the timing of supplying the second gas supplied from the outlet of the orifice to the first flow path, and an exhaust mechanism connected to the flow path between the control valve and the orifice in the second flow path to exhaust the second gas; A gas supply method for supplying gas to a chamber of a substrate processing apparatus using a gas supply system including a control valve, an on/off valve, and a controller for operating an exhaust mechanism, wherein the exhaust mechanism is operated while the on/off valve is closed. , A preparatory step of controlling the control valve to flow the second gas of the target flow rate, and when the target supply timing is reached during the preparatory step, the on/off valve is opened to allow the target flow rate of the second gas to flow into the first flow path It includes a supply step of supplying to

According to the gas supply method according to another aspect of the present invention, the same effect as the above-described gas supply system is exhibited.

According to various aspects and embodiments of the present invention, it is possible to provide an improved gas supply system for controlling a plurality of gases to perform a process.

1 is a schematic diagram of a gas supply system according to a first embodiment.
2 is a cross-sectional view schematically showing an on-off valve.
3 is a diagram schematically illustrating a lower structure of an on/off valve.
4 is a cross-sectional view schematically showing the substrate processing system according to the first embodiment.
5 is a diagram showing the opening/closing timing of the secondary valve for the first gas and the on-off valve for the second gas.
6 is a diagram showing the flow rate of the second gas passing through the control valve for the second gas, the on/off valve, and the exhaust valve.
7 is a schematic diagram of a gas supply system according to a second embodiment.
It is a figure which shows the flow volume of the 2nd gas which passes through the control valve for 2nd gas, an on-off valve, and an exhaust valve.
9 is a schematic diagram of a gas supply system according to a third embodiment.
It is a figure which shows an example of the opening/closing timing of a some on-off valve.
It is a figure which shows another example of the opening/closing timing of a some on-off valve.
It is a figure explaining a recipe and input to the control circuit corresponding to a recipe.
It is a figure explaining an example of opening/closing control of a valve with respect to an input.
Fig. 14 is a diagram for explaining another example of opening/closing control of a valve in response to an input;
It is a figure explaining another example of the opening/closing control of a valve with respect to an input.
16 is a schematic diagram of a gas supply system according to a fourth embodiment.
It is a figure which shows an example of the structure of a control valve.
18 is a view for explaining the confirmation of opening/closing of the on/off valve.
19 is a system schematic diagram when the influence of the detection position of the pressure detector on flow control is evaluated.
20 is an evaluation result evaluated in the system configuration of FIG. 19 .
Fig. 21 is a system schematic diagram when the influence of the detection position of the pressure detector on flow control is evaluated.
Fig. 22 is an evaluation result evaluated in the system configuration of Fig. 21;
23 is a system schematic diagram when the influence of the detection position of the temperature detector on flow control is evaluated.
Fig. 24 is an evaluation result evaluated in the system configuration of Fig. 23;
25 is a result of converting the graph of FIG. 24 based on the data at 25° C. of FIG. 24 .
Fig. 26 is a schematic diagram showing components evaluated for influence on flow rate control.
Fig. 27 is an evaluation result of each component shown in Fig. 26;
28 is a schematic diagram of a conventional gas supply system.
29 is a schematic diagram of a conventional gas supply system.

Hereinafter, various embodiments will be described in detail with reference to the drawings. In each figure, the same code|symbol is attached|subjected about the same or corresponding part.

[First embodiment]

1 is a schematic diagram of a gas supply system 1 according to a first embodiment. The gas supply system 1 shown in FIG. 1 is a system that supplies a gas to the chamber 12 of the substrate processing apparatus. The gas supply system 1 includes a first flow path L1 and a second flow path L2 . The first flow path L1 connects the first gas source GS1 of the first gas and the chamber 12 . The second flow path connects the second gas source GS2 of the second gas and the first flow path L1 . The second flow path L2 joins the first flow path L1 at the connection point PP1 . The 1st flow path L1 and the 2nd flow path L2 are formed with piping, for example. The first gas may be supplied to the chamber 12 at a higher flow rate than the second gas. The first gas and the second gas are optional. The first gas may be a carrier gas as an example. The carrier gas is, for example, Ar gas, N ₂ gas, or the like.

The pressure type flow rate control device FC1 may be disposed on the downstream side of the first gas source GS1 in the first flow path L1 and upstream of the connection point with the second flow path L2 . A primary valve (not shown) is provided upstream of the pressure type flow control device FC1, and a secondary valve (not shown) is provided downstream of the pressure type flow control device FC1. The pressure type flow control device FC1 includes a control valve, a pressure detector, a temperature detector, an orifice, and the like. A control valve is provided downstream of the primary valve. An orifice is provided downstream of the control valve and upstream of the secondary valve. Further, the pressure detector and the temperature detector are configured to measure the pressure and temperature in the flow path between the control valve and the orifice. The pressure type flow control device FC1 adjusts the pressure of the flow path upstream of the orifice by controlling the control valve according to the pressure and temperature measured by the pressure detector and the temperature detector. When the so-called critical expansion condition of P ₁ /P ₂ ≥ about 2 is maintained between the upstream pressure P ₁ and the downstream pressure P ₂ of the orifice, the gas flow rate Q flowing through the orifice is When Q=KP ₁ (where K is a constant), and the critical expansion condition is not satisfied, the gas flow rate (Q) flowing through the orifice is Q=KP ₂ ^m (P ₁ -P ₂ ) ⁿ ( However, K, m, and n are constants). Therefore, the excellent characteristic that the gas flow rate Q can be controlled with high precision by controlling the upstream pressure P ₁ , and the control flow rate value hardly changes even when the pressure of the gas upstream of the control valve changes greatly. can exert The flow rate of the first gas of the first gas source GS1 is adjusted by the pressure flow control device FC1 , and is supplied to the chamber 12 through the connection point PP1 with the second flow path L2 . .

On the downstream side of the second gas source GS2 in the second flow path L2 , the control valve VL1 , the orifice OL1 , and the on-off valve VL2 are arranged in this order.

The control valve VL1 is provided in the second flow path L2 and controls the flow rate of the second gas to a predetermined amount. Control valve VL1 has the same function as the control valve provided in pressure type flow control device FC1. The pressure and temperature of the flow path between the control valve VL1 and the orifice OL1 may be detected by the pressure detector PM and the temperature detector TM.

The pressure detector PM detects the pressure of the second gas in the flow path between the control valve VL1 and the orifice OL1 among the second flow paths L2 . The pressure detector PM may be located on the orifice OL1 side in the flow path between the control valve VL1 and the orifice OL1. That is, the length of the flow path between the pressure detector PM and the orifice OL1 may be shorter than the length of the flow path between the control valve VL1 and the pressure detector PM. In the flow path between the control valve VL1 and the orifice OL1, the pressure detector PM is located on the orifice OL1 side, thereby reducing the error in flow rate adjustment compared to the case where it is located on the control valve side. can

The temperature detector TM detects the temperature of the second gas in the flow path between the control valve VL1 and the orifice OL1 among the second flow paths L2 . The temperature detector TM may be located on the orifice OL1 side in the flow path between the control valve VL1 and the orifice OL1. That is, the length of the flow path between the temperature detector TM and the orifice OL1 may be shorter than the length of the flow path between the control valve VL1 and the temperature detector TM. In the flow path between the control valve VL1 and the orifice OL1, the temperature detector TM is located on the orifice OL1 side, thereby reducing the error in flow rate adjustment compared to the case where it is located on the control valve side. can

The control valve VL1 controls the flow rate of the second gas based on the detection results of the pressure detector PM and the temperature detector TM. As a more specific example, the control circuit C2 determines the operation of the control valve VL1. The control circuit C2 inputs the pressure and temperature detected by the pressure detector PM and the temperature detector TM, and performs temperature correction and flow rate calculation of the detected pressure. And the control circuit C2 compares the set target flow volume and the calculated flow volume, and determines the operation|movement of the control valve VL1 so that a difference may become small. Further, a primary valve may be provided between the second gas source GS2 and the control valve VL1.

The orifice OL1 is downstream of the control valve VL1 and is provided at the terminal L21 of the second flow path L2. Orifice OL1 has the same function as the orifice with which pressure type flow control device FC1 is equipped. The opening/closing valve VL2 is provided at the connection point PP1 between the first flow path L1 and the terminal L21 of the second flow path L2, and is supplied from the outlet of the orifice OL1 to the first flow path L1. The supply timing of the used second gas is controlled. The opening/closing valve VL2 has a function of controlling the supply timing of the second gas while allowing the first gas to pass therethrough. The detail of the structure of on-off valve VL2 is mentioned later. The flow rate of the second gas of the second gas source GS2 is adjusted by the control valve VL1 and the orifice OL1 , and the opening/closing valve VL2 is opened at the connection point PP1 with the first flow path L1 . It is supplied to the first flow path L1 by the operation, and is supplied to the chamber 12 through the first flow path L1.

The gas supply system 1 includes an exhaust mechanism E for exhausting a second gas connected to a flow passage between the control valve VL1 and the orifice OL1 among the second flow passages L2 . The exhaust mechanism E is connected to the second flow passage L2 via the exhaust flow passage EL. The exhaust flow path EL is connected to the connection point PP2 between the control valve VL1 and the orifice OL1 among the second flow paths L2 . The exhaust mechanism E may be connected to the orifice OL1 side in the flow path between the control valve VL1 and the orifice OL1. That is, the length of the flow path between the connection point PP2 and the orifice OL1 may be shorter than the length of the flow path between the control valve VL1 and the connection point PP2. In the flow path between the control valve VL1 and the orifice OL1, when the exhaust mechanism E is connected to the orifice OL1 side, as compared with the case where the exhaust mechanism E is connected to the control valve VL1 side, the pressure adjustment error can be reduced.

The exhaust mechanism E may include an orifice OL2 and an exhaust valve VL3 (an example of a second exhaust valve). Orifice OL2 has the same function as the orifice with which pressure type flow control device FC1 is equipped. In addition, the exhaust flow path EL provided with the orifice OL2 is also called an exhaust gas flow path. The exhaust passage EL is connected to an exhaust device 51 that exhausts the chamber 12 . In addition, the exhaust flow path EL may be connected to another exhaust device. The exhaust valve VL3 is provided in the exhaust flow path EL, and can control exhaust timing. When the exhaust valve VL3 is opened, the second gas whose flow rate is controlled by the orifice OL2 among the second gases existing in the flow path between the control valve VL1 and the orifice OL1 flows from the exhaust flow path EL. is exhausted

The gas supply system 1 is provided with the controller C1 which operates the control valve VL1, the on-off valve VL2, and the exhaust mechanism E. As shown in FIG. The controller C1 is a computer including a processor, a storage unit, an input device, a display device, and the like. The controller C1 inputs the recipe stored in the storage unit and outputs a signal to the control circuit C2 that operates the control valve VL1. Moreover, the controller C1 inputs the recipe memorize|stored in the memory|storage part, and controls the opening-and-closing operation of the on-off valve VL2. Moreover, the controller C1 controls the exhaust mechanism E by inputting the recipe memorize|stored in the memory|storage part. For example, the controller C1 may operate the exhaust valve VL3 via the control circuit C2 .

The orifice OL1 and the on/off valve VL2 may be disposed on a downstream side of the inlet block 55 provided in the chamber 12 . For example, the inlet block 55 is a downstream side of the pressure-type flow control device FC1 in the first flow path L1, and is disposed on an upstream side of the connection point PP1 with the second flow path L2. do. Similarly, the inlet block 55 is disposed between the control valve VL1 and the orifice OL1. The inlet block 55 has a flow path formed therein, and connects the pipe on the upstream side of the inlet block 55 and the pipe or the chamber 12 on the downstream side of the inlet block 55 . When the chamber 12 is released to the atmosphere, the inlet block 55 is removed to divide the connected piping or separate the chamber 12 and the piping. In addition, the downstream side of the inlet block 55 (chamber 12 side) may be exhausted to air|atmosphere or less. In addition, the inlet block 55 of the 1st flow path may be the same member as the inlet block 55 of the 2nd flow path, or a different member may be sufficient as it. Compared with the case where the orifice OL1 and the on/off valve VL2 are located on the downstream side of the inlet block 55 , that is, on the chamber 12 side rather than the inlet block 55 , it is located on the upstream side of the inlet block 55 . Thus, it is possible to control the gas at a position closer to the chamber 12 . Accordingly, the responsiveness of the gas supplied to the chamber 12 may be improved.

The control valve VL1 and the control circuit C2 provided on the side of the second gas source GS2 with the inlet block 55 as a reference may be united (unit U1 in the drawing). The orifice OL1 and the on/off valve VL2 provided on the chamber 12 side with the inlet block 55 as a reference may be unitized (unit U2 in the drawing). Unitization means being integrated as one component. Further, the unit U2 may include a pressure detector PM and a temperature detector TM. In addition, the unit U2 may also include a part of the exhaust flow path mentioned later.

Next, the detail of the structure of on-off valve VL2 is demonstrated. 2 : is sectional drawing which shows schematically on-off valve VL2. The on-off valve VL2 is disposed on the first flow path L1 . As shown in FIG. 2 , the on-off valve VL2 includes a lower body portion 71 and an upper body portion 72 . Between the lower body part 71 and the upper body part 72, the sealing member 74 which exhibits a valve function is arrange|positioned. The lower body portion 71 partitions a flow path through which the gas flows. The upper body portion 72 is provided with a component that operates the sealing member 74 . The sealing member 74 may be constituted by a member having flexibility. The sealing member 74 may be, for example, an elastic member, a diaphragm, a bellows, or the like.

The lower body part 71 partitions the flow path used as a part of the 1st flow path L1 inside it. As a specific example, the lower body part 71 has an inlet 71a and an outlet 71b, and has an internal flow path 71c extending from the inlet 71a to the outlet 71b. The lower body portion 71 has an end L21 of the second flow passage L2 therein. That is, the orifice OL1 provided at the end L21 is accommodated in the lower body portion 71 . Inside the lower body portion 71 , the first flow path L1 and the second flow path L2 merge. The opening/closing valve VL2 controls the timing at which the second gas merges into the first flow path by opening and closing the end L21 of the second flow path L2 with the sealing member 74 .

As a specific example, in the internal flow path 71c, an orifice support part 71d for supporting the orifice OL1 is formed. The orifice support part 71d protrudes from the inner wall of the internal flow path 71c toward the upper body part 72 side (sealing member 74 side) of the internal flow path 71c. The orifice support 71d has an inlet 71e and an outlet 71f, and has an internal flow path 71g extending from the inlet 71e to the outlet 71f. The internal flow path 71g constitutes a part of the second flow path L2. An orifice OL1 is provided at the outlet 71f of the orifice support 71d, which is the terminal L21 of the second flow path L2. A seal portion 75 protruding from the orifice OL1 to the upper body portion 72 side (sealing member 74 side) is provided around the orifice OL1.

The upper body part 72 has a component which controls the distance between the sealing member 74 and the orifice OL1. As a specific example, the upper body part 72 has a cylinder 76 , a biasing member 78 , and a driving part 81 .

The cylinder 76 fixedly supports the sealing member 74 and is accommodated in the upper body portion 72 . For example, the cylinder 76 fixes the sealing member 74 to the lower end. The cylinder 76 has the protrusion 76a diameter-expanded toward the outside. The cylinder 76 has a flow path 76b therein. Between the side surface of the protrusion 76a and the inner wall of the upper body portion 72, and between the side surface of the cylinder 76 lower than the protrusion 76a and the inner wall of the upper body portion 72, a sealing member 79 is provided. A space 82 is defined by the inner wall of the upper body portion 72 , the side wall of the cylinder 76 , the lower surface of the protrusion 76a , and the sealing member 79 . The flow path 76b of the cylinder 76 communicates with the space 82 .

The biasing member 78 elastically urges the cylinder 76 in the direction in which the sealing member 74 is in pressure contact with the orifice OL1. For example, the cylinder 76 is biased toward the lower body portion 71 side (orifice OL1 side). More specifically, the biasing member 78 applies a biasing force downward with respect to the upper surface of the protrusion 76a of the cylinder 76 . By the biasing member 78 , the sealing member 74 is pressed against the orifice OL1 to seal the outlet 73 of the orifice OL1 . In this way, by the action of the biasing member 78, the second flow path is closed (closing control). The biasing member 78 is made of, for example, an elastic body. As a specific example, the biasing member 78 is a spring.

The driving unit 81 moves the cylinder 76 in a direction opposite to the pressure-contacting direction. The drive part 81 supplies air to the flow path 76b of the cylinder 76, and fills the space 82 with air. When the pressure of the air filled in the space 82 becomes greater than the biasing force of the biasing member 78 , the cylinder 76 rises together with the sealing member 74 . That is, the sealing member 74 is separated from the orifice OL1 by the driving unit 81 . In this way, the second flow path is opened by the driving unit 81 (opening control).

The inner flow path 71c of the lower body portion 71 has a structure that is not blocked depending on the operation of the sealing member 74 . That is, the first flow path L1 is not blocked depending on the operation of the sealing member 74 , but is always in communication. 3 : is a figure which shows schematically the lower structure of the on-off valve VL2. As shown in FIG. 3, the internal flow path 71c is partitioned so that the circumference|surroundings of the orifice support part 71d may be enclosed. The first gas passes through the side of the orifice supporting portion 71d when the sealing member 74 is in pressure contact with the orifice OL1, and when the sealing member 74 is spaced apart from the orifice OL1, the orifice supporting portion Pass through the side and above of (71d). In this way, the sealing member 74 realizes opening and closing of the second flow path L2 without affecting the flow of the first flow path L1 .

As mentioned above, in the gas supply system 1, the orifice OL1 is downstream of the control valve VL1, and is provided at the terminal L21 of the 2nd flow path L2, and the on-off valve VL2 is the 1st flow path L1. ) and the terminal L21 of the second flow path L2 are provided at the connection point PP1. That is, since the orifice OL1 and the on/off valve VL2 are disposed at the connection point PP1 between the first flow path L1 and the end L21 of the second flow path L2, the opening/closing from the orifice OL1 The flow path to the valve VL2 can be minimized. Thereby, when the on-off valve VL2 is opened, it can avoid that the gas stored in the flow path from the orifice OL1 to the on-off valve VL2 is supplied to the chamber in a state in which the flow rate is not controlled.

Moreover, in the gas supply system 1, since the on-off valve VL2 is provided at the connection point PP1 of the terminal L21 of the 1st flow path L1 and the 2nd flow path L2, the on-off valve ( The flow path from VL2) to the connection point PP1 can be minimized. Accordingly, even when the pressure of the gas flowing through the first flow path L1 is greater than the pressure of the gas flowing through the second flow path L2 , the second gas flows through the flow path between the on-off valve VL2 and the connection point PP1 . It can avoid taking time to fill.

In addition, in the gas supply system 1, since the exhaust mechanism E for exhausting the second gas is connected to the flow passage between the control valve VL1 and the orifice OL1 among the second flow passages L2, For example, by closing the on-off valve VL2 and operating the exhaust mechanism E, the flow path between the control valve VL1 and the orifice OL1 is predetermined while the supply to the chamber 12 is stopped. can be filled with gas at a target pressure of For this reason, since the time until the flow path between the control valve VL1 and the orifice OL1 is filled with the gas of a predetermined target pressure after opening the on-off valve VL2 can be omitted, the responsiveness is excellent. do.

Hereinafter, as a substrate processing apparatus (substrate processing system) provided with the gas supply system 1, the plasma processing apparatus of one Embodiment is demonstrated. 4 is a diagram schematically illustrating a plasma processing apparatus according to an embodiment. The plasma processing apparatus 10 shown in FIG. 4 is a capacitively coupled plasma processing apparatus, and is used as plasma processing, for example, for plasma etching.

The plasma processing apparatus 10 includes a chamber 12 . The chamber 12 has a substantially cylindrical shape. The chamber 12 is made of, for example, aluminum, and the inner wall surface thereof is anodized. This chamber 12 is secure grounded. Moreover, the ground conductor 12a is mounted on the upper end of the side wall of the chamber 12 so that it may extend upward from the said side wall. The ground conductor 12a has a substantially cylindrical shape. In addition, on the side wall of the chamber 12, a carry-in/out port 12g for a substrate (hereinafter referred to as "wafer W") is provided, and this carry-in/out port 12g can be opened and closed by a gate valve 54 . is to be done

On the bottom of the chamber 12, a substantially cylindrical support 14 is provided. The support part 14 is comprised with the insulating material, for example. The support 14 extends in the chamber 12 in the vertical direction from the bottom of the chamber 12 . Moreover, in the chamber 12, the mounting table PD is provided. The mounting table PD is supported by the support part 14 .

The mounting table PD supports the wafer W on its upper surface. The mounting table PD includes a lower electrode LE and an electrostatic chuck ESC. The lower electrode LE includes a first plate 18a and a second plate 18b. The first plate 18a and the second plate 18b are made of, for example, a metal such as aluminum, and have a substantially disk shape. The second plate 18b is provided on the first plate 18a and is electrically connected to the first plate 18a.

An electrostatic chuck ESC is provided on the second plate 18b. The electrostatic chuck ESC has a structure in which an electrode, which is a conductive film, is disposed between a pair of insulating layers or insulating sheets. A DC power supply 22 is electrically connected to the electrode of the electrostatic chuck ESC through a switch 23 . The electrostatic chuck ESC attracts the wafer W by an electrostatic force such as a Coulomb force generated by a DC voltage from the DC power supply 22 . Accordingly, the electrostatic chuck ESC may support the wafer W.

A focus ring FR is disposed on the peripheral edge of the second plate 18b to surround the edge of the wafer W and the electrostatic chuck ESC. The focus ring FR is provided to improve the uniformity of plasma processing. The focus ring FR may be made of, for example, a material such as silicon, quartz, or SiC.

A refrigerant passage 24 is provided inside the second plate 18b. The refrigerant passage 24 constitutes a temperature control mechanism. A refrigerant is supplied to the refrigerant passage 24 from a chiller unit provided outside the chamber 12 through a pipe 26a. The refrigerant supplied to the refrigerant passage 24 is returned to the chiller unit through the pipe 26b. In this way, the refrigerant is supplied to the refrigerant passage 24 to circulate. By controlling the temperature of the coolant, the temperature of the wafer W supported by the electrostatic chuck ESC is controlled.

In addition, the plasma processing apparatus 10 is provided with a gas supply line 28 . The gas supply line 28 supplies a heat transfer gas, for example, He gas, from the heat transfer gas supply mechanism between the upper surface of the electrostatic chuck ESC and the back surface of the wafer W.

Moreover, the plasma processing apparatus 10 is provided with the heater HT which is a heating element. The heater HT is embedded in the 2nd plate 18b, for example. A heater power supply HP is connected to the heater HT. When electric power is supplied to the heater HT from the heater power supply HP, the temperature of the mounting table PD is adjusted, and the temperature of the wafer W mounted on the mounting table PD is adjusted. In addition, the heater HT may be built in the electrostatic chuck ESC.

Moreover, the plasma processing apparatus 10 is provided with the upper electrode 30 . The upper electrode 30 is disposed above the mounting table PD to face the mounting table PD. The lower electrode LE and the upper electrode 30 are provided substantially parallel to each other. A processing space S for performing plasma processing on the wafer W is provided between the upper electrode 30 and the mounting table PD.

The upper electrode 30 is supported on the upper part of the chamber 12 via the insulating shield member 32 . In one embodiment, the upper electrode 30 may be configured such that the distance in the vertical direction from the upper surface of the mounting table PD, that is, the wafer mounting surface, is variable. The upper electrode 30 may include a top plate 34 and a support body 36 . The top plate 34 faces the processing space S, and the top plate 34 is provided with a plurality of gas discharge holes 34a. The top plate 34 may be made of silicon or silicon oxide. Alternatively, the top plate 34 may be formed by coating a conductive (eg, aluminum) base material with ceramics.

The support body 36 detachably supports the top plate 34, and may be comprised, for example of a conductive material such as aluminum. This support body 36 may have a water cooling structure. A gas diffusion chamber 36a is provided inside the support body 36 . A merging pipe (first flow path L1) of the gas supply system 1 is connected to the gas diffusion chamber 36a.

A plurality of communication holes 36b for connecting the gas diffusion chamber 36a and the plurality of gas discharge holes 34a extending below the gas diffusion chamber 36a are formed in the support body 36 . The upper electrode 30 having such a configuration constitutes the shower head SH.

Further, in the plasma processing apparatus 10 , the deposition shield 46 is detachably provided along the inner wall of the chamber 12 . The deposition shield 46 is also provided on the outer periphery of the support portion 14 . Deposition shield 46, intended to prevent the by-products (deposits) adhered to the plasma processing chamber 12, may be constructed by coating a ceramic, such as Y ₂ O ₃ to an aluminum material.

An exhaust plate 48 is provided on the bottom side of the chamber 12 and between the support 14 and the side wall of the chamber 12 . The exhaust plate 48 may be constituted, for example, by coating an _{aluminum material with ceramics such as Y 2} O _{3 .} A large number of through holes are formed in the exhaust plate 48 . An exhaust port 12e is provided below the exhaust plate 48 and in the chamber 12 . An exhaust device 50 and an exhaust device 51 are connected to the exhaust port 12e via an exhaust pipe 52 . In one embodiment, the exhaust device 50 is a turbo molecular pump, and the exhaust device 51 is a dry pump. The exhaust device 50 is provided on the upstream side from the exhaust device 51 with respect to the chamber 12 . An exhaust flow path EL of the gas supply system 1 is connected to a pipe between the exhaust device 50 and the exhaust device 51 . By connecting the exhaust flow path EL between the exhaust device 50 and the exhaust device 51 , a reverse flow of gas from the exhaust flow path EL into the chamber 12 is suppressed.

In addition, the plasma processing apparatus 10 further includes a first high frequency power supply 62 and a second high frequency power supply 64 . The first high frequency power supply 62 is a power supply for generating a first high frequency wave for plasma generation, and generates a high frequency frequency of 27 to 100 MHz, in an example, 40 MHz. The first high frequency power supply 62 is connected to the lower electrode LE via a matching device 66 . The matching device 66 has a circuit for matching the output impedance of the first high frequency power supply 62 with the input impedance of the load side (lower electrode LE side).

The second high frequency power supply 64 is a power supply that generates a second high frequency for attracting ions to the wafer W, that is, a high frequency for bias, and has a frequency within the range of 400 kHz to 13.56 MHz, in an example, a second frequency of 3.2 MHz. generate high frequency The second high frequency power supply 64 is connected to the lower electrode LE via a matching device 68 . The matching device 68 has a circuit for matching the output impedance of the second high frequency power supply 64 with the input impedance of the load side (lower electrode LE side).

Moreover, in one embodiment, the controller C1 shown in FIG. 1 controls each part of the said plasma processing apparatus 10 for the plasma processing performed by the plasma processing apparatus 10 .

In the plasma processing apparatus 10 , the gas supplied into the chamber 12 can be excited to generate plasma. Then, the wafer W can be processed by the active species. In addition, with the gas supply system 1, for example, while supplying the first gas at the first flow rate, the second gas is supplied in the chamber 12 at a second flow rate smaller than the first flow rate, intermittently and with good response. can supply Accordingly, it is possible to increase the throughput of a process in which different plasma treatments are alternately performed on the wafer W. As shown in FIG.

Next, the gas supply method by the gas supply system 1 is demonstrated. The gas supply method can be realized by operating the components by the controller C1. 5 : is a figure which shows the opening/closing timing of the secondary valve for 1st gas, and the on-off valve VL2 for 2nd gas. As shown in FIG. 5, the controller C1 makes the secondary valve for 1st gas open. Next, in the controller C1, the opening/closing valve VL2 repeats opening and closing in the state in which the 1st secondary valve for gas is open. As an example of such a process, the first gas is a carrier gas, and the second gas is a processing gas required for plasma processing.

Gas supply system 1 opens/closes control valve VL1 and exhaust valve VL3 in accordance with opening/closing control of on-off valve VL2. Specifically, when the second gas of the target flow rate is supplied to the first flow path L1 at the target supply timing, the controller C1 is configured to control the opening/closing valve VL2 in a predetermined period until the target supply timing is reached. In the state in which the exhaust mechanism E is operated while closing the control valve VL1, the second gas of the target flow rate is circulated, and the opening/closing valve is opened when the target supply timing arrives.

FIG. 6 : is a figure which shows the flow volume of the 2nd gas which passes the control valve VL1 for 2nd gas, the on-off valve VL2, and the exhaust valve VL3. In FIG. 6 , the steps of the processing process are expressed using broken lines, and the total number of steps in the entire processing process is 15. FIG. When the on-off valve VL2 performs the on-off operation described with reference to FIG. 5 , as illustrated in FIG. 6 , the second gas intermittently flows through the on-off valve VL2 . In FIG. 6 , the controller C1 opens the on/off valve VL2 in steps 3, 5, 8, and 12 (an example of the target supply timing). In step 2 (an example of a predetermined period until the target supply timing is reached), which is a step immediately before step 3, the controller C1 has the on-off valve VL2 closed, the control valve VL1 and the exhaust The valve VL3 is opened to operate the exhaust mechanism E (preparation step). That is, in step 2, the second gas that has passed through the control valve VL1 is not supplied to the first flow path L1, but is exhausted through the exhaust flow path EL. At this time, the pressure and flow rate of the gas in the second flow passage are controlled to the set target values by the control valve VL1. The controller C1 can synchronize the control valve VL1 and the exhaust valve VL3 by any method. For example, the controller C1 may control so that the exhaust valve VL3 of the exhaust flow path EL is opened when the input flow rate to the control valve VL1 is greater than zero. The controller C1 may close the exhaust valve VL3 of the exhaust flow path EL when the input flow rate to the control valve VL1 is zero.

The controller C1 opens the on-off valve VL2 to supply the second gas of the target flow rate to the first flow path when step 3 which is the target supply timing is reached during the continuation of the preparation step (supply step). In this way, by closing the on-off valve VL2 and operating the exhaust mechanism E, the flow path between the control valve VL1 and the orifice OL1 is set to a predetermined value while the supply to the chamber 12 is stopped. It can be filled with gas at the target pressure. For this reason, since the time until the flow path between the control valve VL1 and the orifice OL1 is filled with the gas of a predetermined target pressure after opening the on-off valve VL2 can be omitted, the responsiveness is excellent. do.

[Second embodiment]

Compared to the gas supply system 1 according to the first embodiment, the gas supply system 1A according to the second embodiment includes an exhaust mechanism EA instead of the exhaust mechanism E, and a controller C1 ) by the gas supply method is different. In 2nd Embodiment, it demonstrates centering around the difference from 1st Embodiment, and overlapping description is abbreviate|omitted.

7 is a schematic diagram of a gas supply system 1A according to the second embodiment. Exhaust mechanism EA has small exhaust flow path EL1 and large exhaust flow path EL2 as exhaust flow path EL. The small exhaust flow path EL1 and the large exhaust flow path EL2 are connected to the flow path between the control valve VL1 and the orifice OL1 among the 2nd flow paths. The small exhaust flow path EL1 has a smaller displacement than the large exhaust flow path EL2. Specifically, an orifice OL2 is provided in the small exhaust flow path EL1, and the exhaust amount is controlled to the first exhaust amount. The exhaust gas flow path EL1 may be provided with an exhaust valve VL3 (an example of a second exhaust valve) that controls exhaust timing. The large exhaust flow path EL2 exhausts at a second displacement greater than the first displacement. The large exhaust flow path EL2 is not provided with a device for controlling the flow rate. The large exhaust flow path EL2 may be provided with an exhaust valve VL4 (an example of the first exhaust valve) that controls the exhaust timing. The exhaust mechanism EA can be controlled via the control circuit C2 by the controller C1, similarly to the exhaust mechanism E according to the first embodiment. The rest of the configuration of the gas supply system 1A is the same as that of the gas supply system 1 . The gas supply system 1A is applicable to the plasma processing apparatus 10 .

Next, the gas supply method by the gas supply system 1A is demonstrated. The gas supply method can be realized by operating the components by the controller C1. The opening/closing timing of the secondary valve for 1st gas and the on-off valve VL2 for 2nd gas is the same as that of FIG. Gas supply system 1A opens and closes control valve VL1 and exhaust valves VL3 and VL4 in accordance with opening/closing control of on-off valve VL2. Specifically, when the second gas of the target flow rate is supplied to the first flow path L1 at the target supply timing, the controller C1 is configured to control the opening/closing valve VL2 in a predetermined period until the target supply timing is reached. In a state in which the exhaust mechanism EA is operated while closing , the control valve VL1 is controlled to flow the second gas at a target flow rate, and the on/off valve is opened when the target supply timing arrives.

8 : is a figure which shows the flow volume of the 2nd gas which passes control valve VL1 for 2nd gas, on-off valve VL2, and exhaust valve VL3, VL4. In addition, only the flow volume regarding the control valve VL1 is shown the input flow volume IN and the output flow volume OUT to the control valve VL1. In FIG. 8 , the steps of the processing process are expressed using broken lines, and the total number of steps in the entire processing process is 15. FIG. When the on-off valve VL2 performs the on-off operation described with reference to FIG. 5 , as illustrated in FIG. 8 , the second gas intermittently flows through the on-off valve VL2 . In FIG. 8 , the controller C1 opens the on-off valve VL2 in steps 3, 5, 8, and 12 (an example of the target supply timing). The controller C1 performs the preparation step and the supply step described in the gas supply method of the first embodiment.

Here, the controller C1 controls the exhaust mechanism EA as follows. The controller C1 opens the exhaust valve VL3 of the small exhaust flow path EL1 when the input flow rate to the control valve VL1 is greater than zero. When the input flow rate to the control valve VL1 is 0, the controller C1 closes the exhaust valve VL3 of the small exhaust flow path EL1. The controller C1 performs opening/closing control of the exhaust valve VL4 of the large exhaust flow path EL2 using the relationship between the input flow rate to the control valve VL1 and the output flow rate. As a specific example, the controller C1 opens the exhaust valve VL4 of the large exhaust flow path EL2 when the input flow rate becomes less than or equal to a predetermined amount than the output flow rate, and closes the exhaust valve VL4 in other cases. In Fig. 8 , the input flow rate is not lower than the output flow rate by a predetermined amount in Steps 2 and 7, and the case where the input flow rate is less than or equal to the predetermined amount than the output flow rate in Steps 10 and 14 is shown. As shown in FIG. 8 , the controller C1 opens the exhaust valve VL4 of the large exhaust flow path EL2 in steps 10 and 14 to increase the exhaust amount. In this way, since the exhaust timing can be controlled for each exhaust flow path, the pressure can be finely adjusted in the flow path between the control valve VL1 and the orifice OL1.

[Third embodiment]

Compared with the gas supply system 1 according to the first embodiment, the gas supply system 1B according to the third embodiment further includes a configuration in which the third gas joins the first flow path L1, and The gas supply method by the controller C1 is different. In 3rd Embodiment, the difference from 1st Embodiment is demonstrated mainly, and overlapping description is abbreviate|omitted.

9 is a schematic diagram of a gas supply system 1B according to the third embodiment. The gas supply system 1B is provided with the 3rd flow path L3 which connects the 3rd gas source GS3 of 3rd gas, and the 1st flow path L1.

On the downstream side of the third gas source GS3 in the third flow path L3 , the control valve VL41 , the orifice OL3 , and the on-off valve VL5 are arranged in this order. The control valve VL41 has the same configuration as the control valve VL1 and is controlled by a control circuit (not shown) having the same configuration as the control circuit C2 . The orifice OL3 has the same configuration as the orifice OL1. The on-off valve VL5 is provided at the connection point PP3 of the 1st flow path L1 and the 3rd flow path L3, and has the same structure as the on-off valve VL2. The flow rate of the third gas of the third gas source GS3 is adjusted by the control valve VL41 and the orifice OL3 , and the opening/closing valve VL5 is opened at the connection point PP3 with the first flow path L1 . It is supplied to the first flow path L1 by the operation, and is supplied to the chamber 12 through the first flow path L1.

The gas supply system 1B is provided with the exhaust mechanism EB which exhausts the 3rd gas connected to the flow path between the control valve VL41 and the orifice OL3 among the 3rd flow paths L3. The exhaust mechanism EB is connected to the third flow passage L3 via the exhaust flow passage EL3. The exhaust flow path EL3 is connected to a connection point PP4 between the control valve VL41 and the orifice OL3 among the third flow paths L3 . The exhaust mechanism EB has the same configuration as the exhaust mechanism E. The exhaust flow path EL3 is connected to the exhaust flow path EL at the connection point PP5 . In addition, the exhaust flow path EL3 may be connected to another exhaust device.

The components for joining the above-described third gas into the first flow path L1 may be controlled by the controller C1 described in the first embodiment. The orifice OL3 and the on/off valve VL5 may be disposed on a downstream side of the inlet block 55 provided in the chamber 12 . The orifice OL3 and the on-off valve VL5 provided on the chamber 12 side with the inlet block 55 as a reference may be united (unit U3 in the drawing). Further, the unit U3 may include a pressure detector PM and a temperature detector TM. Moreover, the unit U3 may also include a part of exhaust flow path EL3. Other configurations of the gas supply system 1B are the same as those of the gas supply system 1 . The gas supply system 1B is applicable to the plasma processing apparatus 10 .

Next, the gas supply method by the gas supply system 1B is demonstrated. The gas supply method can be realized by operating the components by the controller C1. The opening/closing timing of the secondary valve for 1st gas is arbitrary. That is, the first gas may or may not be introduced. 10 : is a figure which shows an example of the opening/closing timing of on-off valve VL2, VL5. As shown in FIG. 10, the controller C1 opens and closes the on-off valve VL2 for 2nd gas, and the on-off valve VL5 for 3rd gas alternately. That is, the controller C1 periodically opens and closes the opening/closing valves VL2 and VL5, and shifts the opening/closing cycle. As an example of such a process, the first gas is a carrier gas, and the second gas and the third gas are processing gases required for plasma processing. In another example, the first gas is not introduced, and the second gas and the third gas are processing gases required for plasma processing. 11 : is a figure which shows the other example of the opening/closing timing of on-off valve VL2, VL5. 11, the controller C1 may synchronize the on-off valve VL2 for 2nd gas, and the on-off valve VL5 for 3rd gas, and may open and close it.

Next, a specific example in which the controller C1 reads and executes the recipe of the processing process will be described. The recipe is stored in advance in the storage unit of the controller C1. It is a figure explaining a recipe and input to the control circuit corresponding to a recipe. As shown in FIG. 12A , in the recipe, Ar gas (an example of the first gas), O ₂ gas (an example of the second gas), and C ₄ F _{6 in the processing processes of Step 1 to Step 8} The flow rate of the gas (an example of the third gas) is preset. In this recipe, the Ar gas as a carrier gas, step 1 to the C ₄ F ₆ gas is used as the O ₂ gas and C ₄ F supplied to ₆ gas in Step 3 and Step 5, and adding a gas as a feed, and the added gas from step 8 It is supplied in step 8. The controller C1 reads the recipe shown in FIG. 12A from the storage unit, so that the processing process shown in FIG. 12B is executed, the control circuit and control of the pressure flow control device FC1 A signal is output to the control circuit of the valve VL1.

The control process shown in FIG. 12B is changed to supply the additive gas at the same flow rate as the supply step in the step immediately before the supplying step of the additive gas based on the recipe (the dotted dots in the figure) . Specifically, the controller C1 changes _{the flow rate of the O 2} gas in the second step from 0 [sccm] to 6 [sccm], and _{the flow rate of the C 4} F ₆ gas in the second step from 0 [sccm] Change to 7.5 [sccm]. In addition, the controller C1 changes _{the flow rate of the O 2} gas in the fourth step from 0 [sccm] to 6 [sccm], and changes _{the flow rate of the C 4} F ₆ gas in the fourth step from 0 [sccm] to 7.5 [ sccm]. In addition, the controller C1 changes _{the flow rate of the C 4} F ₆ gas in the seventh step from 0 [sccm] to 5.5 [sccm].

The controller C1 and the control circuit control each valve based on the input to the control circuit corresponding to the recipe shown in Fig. 12B. Since the control method of the valve for the second gas and the third gas is common, the method for controlling the second gas will be described below, and the method for controlling the third gas will be omitted. In the second gas control method, only representative steps are described. It is a figure explaining an example of the opening/closing control of the valve with respect to an input. Fig. 13A shows the processing of the controller C1. As shown in Fig. 13A, the controller C1 inputs a recipe in which the second gas is supplied at a flow rate α [sccm] in step N. The controller C1 changes that the second gas is supplied at the flow rate α [sccm] in step N-1 as an input (target setting) to the control circuit corresponding to the recipe. And the controller C1 determines the opening/closing state of the valve of each step. Moreover, the controller C1 directly controls the on-off valve VL2, and indirectly controls the control valve VL1 and the exhaust valve VL3 through the control circuit of the control valve VL1.

The controller C1 sets the control valve VL1 to close, the on-off valve VL2 to close, and the exhaust valve VL3 to close in step N-2. In step N-1, the controller C1 opens the control valve VL1, closes the on-off valve VL2, and sets the exhaust valve VL3 to open. In step N, the controller C1 sets the control valve VL1 to open, the on-off valve VL2 to open, and the exhaust valve VL3 to open. In step N+1, the controller C1 closes the control valve VL1, closes the on/off valve VL2, and sets the exhaust valve VL3 to close.

Then, in each step, the controller C1 opens and closes the on-off valve VL2 and outputs a signal to the control circuit so that the operation is as set. The signal to the control circuit includes the target flow rate (input) and the open/close state of the control valve VL1 and the exhaust valve VL3. The control circuit controls the opening and closing of the control valve VL1 and the exhaust valve VL3 according to a signal input from the controller C1.

Fig. 13B shows the processing of the control circuit to which the signal is input. 13B , in step N-2, the control circuit closes the control valve VL1 and the exhaust valve VL3. The controller C1 closes the on-off valve VL2. In step N-1, the control circuit opens the control valve VL1 and the exhaust valve VL3. Moreover, the control circuit controls the control valve VL1 so that the output flow rate becomes the flow rate α [sccm] (self control). Moreover, by opening the exhaust valve VL3, the exhaust flow rate is automatically controlled by the orifice (self control). The controller C1 closes the on-off valve VL2. In this way, in step N-1, in the flow path between the control valve VL1 and the orifice OL1, the second gas flows at a flow rate α [sccm].

Next, in step N, the control circuit opens the control valve VL1 and the exhaust valve VL3. Moreover, the control circuit controls the control valve VL1 so that the output flow rate becomes the flow rate α [sccm] (self-control). In addition, by opening the exhaust valve VL3, the exhaust flow rate is automatically controlled by the orifice (self-control). The controller C1 opens the on-off valve VL2. In this way, in step N, the second gas adjusted to the flow rate α [sccm] in step N-1 is supplied to the first flow path L1. In step N+1, the control circuit closes the control valve VL1 and the exhaust valve VL3. The controller C1 closes the on-off valve VL2. Accordingly, the supply of the second gas to the first flow path L1 is stopped. In this way, the controller C1 performs the preparation step and the supply step described in the gas supply method of the first embodiment.

It is a figure explaining another example of the opening/closing control of the valve with respect to an input. Fig. 14A shows the processing of the controller C1. As shown in FIG. 14A , the controller C1 executes a recipe in which the second gas is supplied at the flow rate α [sccm] in step N and the second gas is supplied at the flow rate β in step N+1. is input The controller C1 changes that the second gas is supplied at the flow rate α [sccm] in step N-1 as an input (target setting) to the control circuit corresponding to the recipe. In addition, since the step immediately before step N+1 which is a supply step is step N which is a supply step, the flow volume set in step N is not changed. That is, when the supply steps are continuous, the preparation step is set only in the first supply step, and subsequent processing is controlled without the preparation step. The other processing is the same as the contents described with reference to Fig. 13, and the processing is executed as shown in Fig. 14B according to the setting contents shown in Fig. 14A.

It is a figure explaining another example of the opening/closing control of a valve with respect to an input. Fig. 15A shows the processing of the controller C1. As shown in FIG. 15A , the controller C1 executes a recipe in which the second gas is supplied at the flow rate α [sccm] in step N and the second gas is supplied at the flow rate β in step N+2. is input As an input (target setting) to the control circuit corresponding to the recipe, the controller C1 supplies the second gas at a flow rate α [sccm] in step N-1, and supplies the second gas at a flow rate α [sccm] in step N+1. Change that it is supplied with a flow rate β. The other processing is the same as the contents described with reference to Fig. 13, and the processing is executed as shown in Fig. 15(B) according to the setting contents shown in Fig. 15A.

As described above, the gas supply system 1B can make a plurality of gases merge into the first flow path L1 . In addition, the gas supply system 1B has excellent responsiveness by performing the preparation step and the supply step described in the gas supply method of the first embodiment in each of the second flow path L2 and the third flow path L3 . Gas supply can be performed.

[Fourth embodiment]

In the gas supply system 1C according to the fourth embodiment, as compared with the gas supply system 1 according to the first embodiment, the orifice OL1 and the on-off valve VL2 are located on the upstream side of the inlet block 55 . It is different to do In 4th Embodiment, the difference from 1st Embodiment is mainly demonstrated, and overlapping description is abbreviate|omitted.

16 is a schematic diagram of a gas supply system 1C according to the fourth embodiment. As shown in FIG. 16 , in the gas supply system 1C , the connection point PP1 between the first flow path L1 and the second flow path L2 is located on the upstream side of the inlet block 55 . The rest of the configuration of the gas supply system 1C is the same as that of the gas supply system 1 .

The control valve VL1, the control circuit C2, the orifice OL1, and the on/off valve VL2 provided on the second gas source GS2 side with the inlet block 55 as a reference may be unitized (in the drawing). unit (U4)). Further, the unit U4 may include a pressure detector PM and a temperature detector TM. In addition, the unit U4 may include a part of the exhaust flow path EL. As mentioned above, in the gas supply system 1C, since the component located from the control valve VL1 to the on-off valve VL2 can be unitized, handling of each component becomes easy.

As mentioned above, although various embodiment was demonstrated, it is not limited to embodiment mentioned above, and various modified aspects can be comprised. For example, you may combine each embodiment. In addition, although the above-described substrate processing apparatus is a capacitively coupled plasma processing apparatus, the substrate processing apparatus may be any plasma processing apparatus such as an inductively coupled plasma processing apparatus or a plasma processing apparatus using surface waves such as microwaves.

Moreover, in the gas supply systems 1A, 1B, the unit which consists of an orifice and an on-off valve may be located upstream from the inlet block 55. FIG.

In addition, although the control valve VL1 mentioned above operated based on the detection result of the pressure detector PM arrange|positioned upstream of the on-off valve VL2, it is not limited to this. For example, the detection result of the additionally added pressure detector may be used. The added pressure detector is arranged on the downstream side of the on-off valve VL2, for example, and detects the pressure of the first flow path L1. In the control circuit C2, the difference between the calculated flow rate and the set flow rate obtained from the pressure value measured by the pressure detector PM under the condition that the pressure of the second flow path L2 is twice or more of the pressure of the first flow path L1. to decrease the control valve VL1. In addition, the control circuit C2 is configured to measure the pressure value measured by the pressure detector PM and the added pressure detector under the condition that the pressure of the second flow path L2 is less than twice the pressure of the first flow path L1 . Control valve VL1 is controlled so that the difference between the calculated flow rate and the set flow volume calculated|required from the differential pressure between pressure values may be reduced. In this way, the control valve VL1 described above may operate by differential pressure control. In addition, the added pressure detector may be assembled to the unit U2 of FIG. That is, the added pressure detector may be united together with the orifice OL1 and the on-off valve VL2. Alternatively, the added pressure detector may be assembled in the unit U4 of FIG. 16 . That is, the added pressure detector may be united together with the control valve VL1, the control circuit C2, the orifice OL1, and the on-off valve VL2.

Moreover, in the above-mentioned embodiment, the above-mentioned control valve VL1 can be used for opening/closing confirmation of the on-off valve VL2. 17 : is a figure which shows an example of the structure of control valve VL1. 17 , the control valve VL1 includes a drive unit 122 . This driving unit 122 has a control circuit 124 . The control circuit 124 is configured to receive a flow difference ΔF between the output flow rate and the set flow rate from the control circuit C2 described above.

In addition, the driving unit 122 includes a piezoelectric element 126 (a piezoelectric element). The piezoelectric element 126 is configured to move the valve body 130 described later in the opening/closing operation of the control valve VL1 . The piezoelectric element 126 expands according to an applied voltage (an example of a control voltage), and opens and closes the control valve VL1 by bringing the valve body 130 and the valve seat 128d, which will be described later, close to or apart from each other. For example, the control circuit 124 controls the applied voltage Vp, which is the voltage applied to the piezoelectric element 126, so that the flow rate difference ΔF becomes zero. Further, the control circuit 124 is configured to input a signal for specifying the voltage Vp applied to the piezoelectric element to the control circuit C2. That is, the control circuit C2 functions as a control unit that acquires a signal for specifying the voltage Vp applied to the piezoelectric element (the control value of the control valve VL1).

Control valve VL1 includes a main body 128 , a valve body 130 (diaphragm), a disc spring 132 , a pressing member 134 , a base member 136 , a sphere 138 , and a support member. (140) more. The main body 128 provides a flow path 128a, a flow path 128b, and a valve chamber 128c. The flow path 128a and the flow path 128b constitute a part of the second flow path L2 described above. Moreover, the main body 128 further provides the valve seat 128d.

The valve body 130 is biased against the valve seat 128d via the pressing member 134 by a disc spring 132 . When the voltage applied to the piezoelectric element 126 is zero, the valve body 130 is in contact with the valve seat 128d, and the control valve VL1 is in a closed state.

One end (lower end in the drawing) of the piezoelectric element 126 is supported by a base member 136 . The piezoelectric element 126 is connected to the support member 140 . The support member 140 is coupled to the pressing member 134 at one end (lower end in the drawing). When a voltage is applied to the piezoelectric element 126, the piezoelectric element 126 expands. When the piezoelectric element 126 extends, the support member 140 moves in a direction away from the valve seat 128d, and accordingly, the pressing member 134 also moves in a direction away from the valve seat 128d. Thereby, the valve body 130 separates from the valve seat 128d, and control valve VL1 will be in the opened state. The opening degree of the control valve VL1, ie, the distance between the valve body 130 and the valve seat 128d, is controlled by the voltage applied to the piezoelectric element 126 .

Here, the control circuit C2 can determine whether to open or close the on-off valve VL2 based on the applied voltage of the piezoelectric element 126 . 18 : is a figure explaining opening/closing confirmation of an on-off valve. 18A is a gas supply recipe, FIG. 18B is an opening/closing timing of the on-off valve VL2, FIG. 18C is a detection value of the pressure detector PM, and FIG. (D) is the control voltage of the piezoelectric element of the control valve VL1. In the case of the recipe shown in FIG. 18A, as shown in FIG. 18B, the "open timing" of the on-off valve VL2 becomes the same as the timing of the "gas ON" of the recipe. And, as shown in FIG. 18C, the detection value of the pressure detector PM becomes a constant value irrespective of opening and closing of the on-off valve VL2. Such a situation in which the pressure is constant is realized by the opening and closing of the control valve VL1 , that is, the operation of the piezoelectric element 126 . The control voltage of the piezoelectric element 126 changes from the voltage value V _{P1 to the voltage value V P2 at the time T P1 when the} on-off valve VL2 is opened, and the voltage at _{the time T P2} when the on-off valve VL2 is closed. It changes from the value V _P2 to the voltage value V _P1. Similarly, the control voltage of the piezoelectric element 126 changes from the voltage value V _{P1 to the voltage value V P2 at the time T P3 when the} on-off valve VL2 is opened, and at the time T _P4 when the on-off valve VL2 is closed. It changes from voltage value V _P2 to voltage value V _P1. The control circuit C2 can determine whether the on-off valve VL2 is opened or closed by determining the change in the control voltage of the piezoelectric element 126 . Accordingly, it is possible to easily determine whether the on-off valve VL2 is opened or closed without adding a sensor or the like.

The control circuit C2 may compare the acquired control voltage with a reference value of a predetermined control voltage, and output an alarm according to the comparison result. The predetermined reference value of the control voltage is, for example, the control voltage of the piezoelectric element 126 operated when prepared according to the recipe. The reference value of the measured control voltage is stored in advance in a storage unit that can be referred to by the control circuit C2. The control circuit C2 acquires a reference value by referring to the storage unit, and compares it with the acquired control voltage. The comparison result is, for example, a difference between an acquired control voltage and a reference value of a predetermined control voltage. The control circuit C2 outputs an alarm, for example, when the difference is equal to or greater than a predetermined threshold. The control circuit C2 outputs an alarm signal to, for example, a display or a speaker. Thereby, an alarm can be output when an on-off valve is not carrying out a predetermined operation|movement.

[Example]

Hereinafter, examples and comparative examples performed by the present inventors will be described in order to explain the above effects, but the present invention is not limited to the following examples.

(Verification of the detection position of the pressure detector (PM))

It was verified whether the detection position of the pressure detector PM for detecting the pressure in the flow path between the control valve and the orifice affects the flow rate control. First, it was checked whether the positional relationship between the pressure detector PM and the orifice affects the flow rate control. 19 is a system schematic diagram when the influence of the detection position of the pressure detector PM on flow control is evaluated. As shown in FIG. 19A , the evaluation system includes a flow rate reference device FC2, a control valve VL7, a pressure detector PM, an orifice OL5, and an on/off valve VL8. Flow rate reference device FC2 has the same configuration as pressure type flow rate control device FC1. As the evaluation method, as shown in FIG. 19B , the distance from the orifice OL5 to the pressure detector PM is taken as the separation distance LL1, and the separation distance LL1 is 0 [m] to 3 [ m], and the flow rate at the outlet side of the orifice OL5 and the error of the set value were evaluated. The results are shown in FIG. 20 .

20 is an evaluation result evaluated in the system configuration of FIG. 19 . The horizontal axis is the flow rate set value [%], and the vertical axis is the flow rate error [%]. The flow rate set value is a ratio to the maximum value of the flow rate that the orifice OL5 can flow. When the separation distance LL1 is 0 [m], when the separation distance LL1 is 1 [m], when the separation distance LL1 is 2 [m], the separation distance LL1 is 3 [m] The flow rate error was measured for each case, and the result was plotted. The broken line in the figure is the standard specification value of the orifice. As shown in FIG. 20 , it was confirmed that the absolute value of the flow rate error increased as the separation distance LL1 became longer. It is considered that the precision is inferior to the differential pressure of the length of the pipe between the orifice OL5 and the pressure detector PM.

Next, it was checked whether the positional relationship between the pressure detector PM and the control valve affected the flow rate control. 21 is a system schematic diagram when the influence of the detection position of the pressure detector PM on flow control is evaluated. As shown in FIG. 21A , the evaluation system includes a flow rate reference device FC2, a control valve VL7, a pressure detector PM, an orifice OL5, and an on/off valve VL8. Flow rate reference device FC2 has the same configuration as pressure type flow rate control device FC1. As the evaluation method, as shown in FIG. 21B , the distance from the pressure detector PM to the control valve VL7 is defined as the separation distance LL2, and the separation distance LL2 is 0 [m] to 3 It was changed in the range of [m], and the flow volume at the outlet side of the orifice OL5 and the error|error of the set value were evaluated. The results are shown in FIG. 22 .

22 is an evaluation result evaluated in the system configuration of FIG. 21 . The horizontal axis is the flow rate set value [%], and the vertical axis is the flow rate error [%]. The flow rate set value is a ratio to the maximum value of the flow rate that the orifice OL5 can flow. When the separation distance (LL2) is 0 [m], when the separation distance (LL2) is 1 [m], when the separation distance (LL2) is 2 [m], the pressure detector (PM) and the control valve (VL7) Measurements were made for a case where the interval between s was 3 [m], and the results were plotted. The broken line in the figure is the standard specification value of the flow rate reference device FC2. As shown in FIG. 22, it was confirmed that the flow error does not depend on the pipe length between the pressure detector PM and the control valve VL7. From the results of Figs. 20 and 22, it was confirmed that the pressure detector PM was positioned on the orifice side in the flow path between the control valve and the orifice to accurately control the flow rate. In addition, it was confirmed that the length of the pipe between the orifice OL5 and the pressure detector PM needs to be set to 1 [m] or less in order to make the flow path error 0.1 [%] or less.

(Verification of the detection position of the temperature detector (TM))

It was verified whether the detection position of the temperature detector TM which detects the temperature in the flow path between a control valve and an orifice affects flow control. 23 is a system schematic diagram when the influence of the detection position of the temperature detector TM on flow control is evaluated. As shown in FIG. 19A , the evaluation system is disposed in the measurement chamber RO1 at room temperature (25° C.), and includes a flow rate reference device FC2, a control valve VL7, a pressure detector PM, and a temperature detector. (TM), an orifice OL5, and an on/off valve VL8. Flow rate reference device FC2 has the same configuration as pressure type flow rate control device FC1. The temperature detector TM was arranged on the side of the control valve VL1 and used for controlling the flow rate of the control valve VL1. Orifice OL5 and on-off valve VL8 were arrange|positioned in thermostat RO2 which can control the temperature in the range from 25 degreeC to 50 degreeC. The temperature was changed in the constant temperature bath RO2, and the relationship between the flow volume at the outlet side of the orifice OL5 and the set value was evaluated. The separation distance LL3 between the pressure detector PM and the orifice OL5 was set to 2 [m]. The results are shown in FIGS. 24 and 25 .

24 is an evaluation result evaluated in the system configuration of FIG. 23 . The horizontal axis represents the flow rate set value [%], and the vertical axis represents the measured flow rate [sccm] at the outlet side of the orifice OL5. The flow rate set value is a ratio to the maximum value of the flow rate that the orifice OL5 can flow. When the set temperature of the constant temperature bath RO2 was 25 degreeC, 30 degreeC, 40 degreeC, and 50 degreeC, the flow volume and set value of the outlet side of orifice OL5 were plotted about each. FIG. 25 is a result of converting the graph of FIG. 24 based on the data at 25° C. of FIG. 24 . The horizontal axis is the flow rate set value [%], and the vertical axis is the value based on the flow rate at 25℃. As shown in FIG. 25, it was confirmed that the absolute value of a flow rate error becomes large, so that the difference between the temperature of the orifice OL5 and the detection temperature (25 degreeC) of the temperature detector TM became large. Thus, it was confirmed that it is important to accurately measure the temperature of the orifice. From the results of Figs. 24 and 25, it was confirmed that the temperature detector TM can accurately control the flow rate when it is positioned on the orifice side in the flow path between the control valve and the orifice.

(Verification of the influence of each component of the semiconductor manufacturing system on flow control)

The influence of components of a semiconductor manufacturing system, including a gas supply system, on flow control was evaluated. 26 is a schematic diagram showing components evaluated for influence on flow rate control. Flow control devices are omitted. The system shown in FIG. 26 includes a first gas source GS1 , a second gas source GS2 , and a chamber 12 . The first gas source GS1 is connected to the chamber 12 through the first flow path L1 . The second gas source GS2 is connected to the second flow path L2 . The second flow path L2 joins the first flow path L1 at the connection point PP1 .

The evaluation method was carried out as follows. The first gas was Ar gas, and was continuously supplied to the chamber 12 at 750 [sccm]. In addition, the second gas was set as O ₂ gas, and was intermittently supplied to the chamber 12 at 5 [sccm]. Then, plasma was generated in the chamber 12, and the light emission intensity of the plasma was measured. The measured light emission intensity was normalized based on the maximum light emission intensity. The time until the measured luminous intensity changes from 0% to 90% when gas is supplied (evaluation when rising), and the time until the measured luminous intensity changes from 100% to 20% when gas supply is stopped (decrease) city evaluation) was measured and the responsiveness was confirmed.

The evaluation site|part was carried out as follows. Part A is the flow control device. As for the flow control device, an example having an orifice OL1 and an on/off valve VL2 and a pressure type flow control device FC3 of the gas supply system 1 shown in FIG. 29 were evaluated. The site B is the length (Add Line length) from the flow control device to the connection point PP1. The add-line length was compared with the example having an orifice OL1 and an on/off valve VL2 (add-line length 0 [m]) and add-line lengths 0.15 [m], 1.00 [m], and 3.00 [m]. Examples were evaluated. The site C is the length (Main Line length) from the first gas source GS1 to the chamber 12, and the cases of 0.15 [m], 1.00 [m], and 3.00 [m] were evaluated. Site D is the upper electrode capacitance, and cases of 100 [cc], 160 [cc], and 340 [cc] were evaluated. Site E is the number of gas (GAS) holes, and 53 and 105 cases were evaluated. The results are shown in FIG. 27 .

FIG. 27 is an evaluation result of each component shown in FIG. 26 . Areas A to C surrounded by broken lines correspond to portions included in the gas supply system according to the embodiment. About the site|part A, evaluation at the time of a rise WHEREIN: It was confirmed that the Example was excellent in responsiveness compared with the comparative example. That is, it was confirmed that the embodiment having the orifice OL1 and the on/off valve VL2 has better responsiveness than the pressure type flow rate control device FC3 of the gas supply system 1 shown in FIG. 29 . Further, for the site B, in both the evaluation at the time of rising and the evaluation at the time of falling, the case where the length of the ad line was 0 [m] was the most excellent in responsiveness. That is, it was confirmed that the responsiveness of the embodiment having the orifice OL1 and the on-off valve VL2 was excellent. In addition, it was confirmed that the site-dependency of the responsiveness was small for the site C and the site E. Moreover, about the site|part D, it was confirmed that the responsiveness was so excellent that the volume of an upper electrode was small.

And the influence degree of each site|part was computed. The influence degree shows the ratio of the size of the influence of each site|part with respect to the magnitude|size of the total influence. As shown in FIG. 27, it was confirmed that the site|part B was the site|part most affected among sites A-E. That is, it was confirmed that the configuration of the embodiment having the orifice OL1 and the on/off valve VL2 is very effective in improving the responsiveness since it is possible to control the parameters of the most affected portion.

In addition, the above measurement is a result when Ar gas is supplied, that is, when a carrier gas is present. For example, as in the gas supply system 1B shown in Fig. 9, there are cases in which it is not necessary to supply a carrier gas. . In such a case, the dependence of the response on the main line length tends to increase. For this reason, when there is a step using the carrier gas in the recipe, the orifice OL1 and the on/off valve VL2 are arranged on the upstream side from the inlet block 55, and when there is no step using the carrier gas in the recipe, the orifice OL1 and on-off valve VL2 may be arranged on the downstream side of inlet block 55 . That is, the positions of the orifice OL1 and the on/off valve VL2 with respect to the inlet block 55 may be determined according to the recipe.

1, 1A, 1B, 1C... gas supply system
10… Plasma processing apparatus (substrate processing apparatus)
12… chamber
51… exhaust
C1… controller
55… inlet block
U1… unit
U2… unit
74… sealing member
76… cylinder
78… absence of tax
81… drive
126… piezoelectric element
128d… valve seat
130… valve body
C2… control circuit (control unit)
E, EA, EB… exhaust mechanism
EL… exhaust flow path
EL1… extinguisher euro
EL2… large exhaust euro
GS1… first gas source
GS2… second gas source
GS3… third gas source
L1… 1st Euro
L2… 2nd Euro
L3… 3rd Euro
PP1, PP2, PP3, PP4, PP5… connection point
FC1, FC3… Pressure flow control unit
OL1, OL2, OL3, OL5… orifice
VL2, VL5... on-off valve
PM… pressure detector
TM… temperature detector
L21… termination
PP2… connection point
VL1, VL41, VL7... control valve
VL3, VL4... exhaust valve

Claims (20)

a first flow path L1 connecting the first gas source GS1 and the substrate processing chamber 12;
and a three-way valve (VL2) disposed on the first flow path (L1);
a second flow path (L2) connecting the second gas source (GS2) and the three-way valve (VL2);
a flow control valve (VL1) disposed on the second flow path (L2);
an orifice OL1 disposed between the three-way valve VL2 and the flow control valve VL1 on the second flow path L2;
at least one exhaust flow path (EL) connecting the exhaust device (51) with the connection point (PP2) on the second flow path (L2) between the flow control valve (VL1) and the orifice (OL1);
and an exhaust mechanism disposed on the at least one exhaust passage (EL). The method according to claim 1,
The orifice OL1 is mounted on the three-way valve VL2,
The three-way valve VL2 includes a flexible member 74, which seals the orifice OL1 during closing control, whereby the second flow path L2 The gas supply system is separated from the first flow path (L1) and separated from the orifice (OL1) during opening control, whereby the second flow path (L2) communicates with the first flow path (L1). 3. The method according to claim 2,
The three-way valve VL2 further includes a lower body portion 71, an upper body portion 72, and an orifice support portion 71d disposed in the lower body portion 71,
The orifice support portion 71d protrudes toward the upper body portion 72 side, and supports the orifice OL1 at the end thereof,
The lower body part 71 includes an internal flow path 71c constituting a part of the first flow path L1,
The internal flow path (71c) is partitioned to surround the orifice support part (71d), and is capable of communicating with the second flow path (L2) through the orifice (OL1). 4. The method according to claim 3,
The three-way valve (VL2) is,
A cylinder 76 for fixing and supporting the flexible member 74, and a biasing member 78 for elastically urging the cylinder 76 in a direction in which the flexible member 74 is press-contacted to the orifice OL1 )Wow,
and a driving unit (81) for moving the cylinder (76) in a direction opposite to the pressure-contacting direction. 5. The method according to any one of claims 1 to 4,
The exhaust mechanism includes an exhaust valve (VL3) disposed on the at least one exhaust passage (EL). 6. The method of claim 5,
In a first period, the flow control valve VL1 and the exhaust valve VL3 are maintained in an open state, and the three-way valve VL2 separates the second flow path L2 from the first flow path L1. and, in a second period after the first period, the three-way valve VL2 closes the second flow path L2 while maintaining the closed state of the flow control valve VL1 and the exhaust valve VL3. The gas supply system further comprising a controller which controls the flow control valve (VL1), the three-way valve (VL2), and the exhaust valve (VL3) so as to communicate with the first flow path (L1). 5. The method according to any one of claims 1 to 4,
The at least one exhaust flow path EL includes a small exhaust flow path EL1 and a large exhaust flow path EL2,
The exhaust mechanism includes a first exhaust valve VL4 disposed on the large exhaust flow path EL2 and a second exhaust valve VL3 disposed on the small exhaust flow path EL1 , the gas supply system . 5. The method according to any one of claims 1 to 4,
A pressure detector (PM) and a temperature detector (TM) disposed between the flow control valve (VL1) and the orifice (OL1) on the second flow path (L2) are further provided,
The flow control valve (VL1) controls the flow rate of the gas flowing through the second flow path (L2) based on detection results of the pressure detector (PM) and the temperature detector (TM). 5. The method according to any one of claims 1 to 4,
Another three-way valve (VL5) disposed between the three-way valve (VL2) and the substrate processing chamber (12) on the first flow path (L1);
a third flow path (L3) connecting the third gas source (GS3) and the other three-way valve (VL5);
Another flow control valve (VL41) disposed on the third flow path (L3);
Another orifice (OL3) disposed between the other three-way valve (VL5) and the other flow control valve (VL41) on the third flow path (L3);
Another exhaust flow path connecting the exhaust device 51 or another exhaust device with another connection point PP4 on the third flow path L3 between the other flow control valve VL41 and the other orifice OL3 ( EL3) and
and another exhaust mechanism (EB) disposed on the other exhaust passage (EL3). 10. The method of claim 9,
Communication between the second flow path L2 and the first flow path L1 in the three-way valve VL2, and the third flow path L3 and the first flow path L1 in the other three-way valve VL5 ) of the gas supply system, which is alternately communicated. 10. The method of claim 9,
Communication between the second flow path L2 and the first flow path L1 in the three-way valve VL2, and the third flow path L3 and the first flow path L1 in the other three-way valve VL5 ) of the gas supply system, which is performed simultaneously. A three-way valve (VL2) having a first inlet, a second inlet and an outlet, wherein the first inlet of the three-way valve (VL2) is connected to a first gas source (GS1), the three-way valve (VL2) The outlet includes a three-way valve VL2 connected to the substrate processing chamber 12 ;
an orifice (OL1) mounted on the second inlet of the three-way valve (VL2);
A flow control valve (VL1) having an inlet and an outlet, wherein the inlet of the flow control valve (VL1) is connected to a second gas source (GS2), and the outlet of the flow control valve (VL1) includes the three-way a flow control valve (VL1) connected to the second inlet of the valve (VL2);
and an exhaust mechanism disposed on at least one exhaust flow path (EL) connecting an exhaust device (51) and a connection point (PP2) between the flow control valve (VL1) and the three-way valve (VL2); supply system. 13. The method of claim 12,
The three-way valve VL2 includes a flexible member 74 and an internal flow path 71c through which the second inlet connects the first inlet and the outlet, and the flexible member 74 is closed sealing the orifice OL1 during control, whereby the second inlet in the three-way valve VL2 is separated from the internal flow path 71c, and separated from the orifice OL1 during open control, thereby , wherein the second inlet in the three-way valve (VL2) communicates with the internal flow path (71c). 14. The method of claim 13,
The three-way valve VL2 further includes an orifice support portion 71d for supporting the orifice OL1 at the second inlet,
The internal flow path 71c is partitioned so as to surround the orifice support portion 71d. a substrate processing chamber 12;
an exhaust device 51;
A substrate processing system comprising: a gas supply system (1) connected to the substrate processing chamber (12) and the exhaust device (51);
The gas supply system 1,
A three-way valve (VL2) having a first inlet, a second inlet and an outlet, wherein the first inlet of the three-way valve (VL2) is connected to a first gas source (GS1), the three-way valve (VL2) The outlet is connected to the substrate processing chamber 12, a three-way valve (VL2) and
an orifice (OL1) mounted on the second inlet of the three-way valve (VL2);
A flow control valve (VL1) having an inlet and an outlet, wherein the inlet of the flow control valve (VL1) is connected to a second gas source (GS2), and the outlet of the flow control valve (VL1) includes the three-way a flow control valve (VL1) connected to the second inlet of the valve (VL2);
and an exhaust mechanism disposed on at least one exhaust flow path EL connecting the exhaust device 51 and a connection point PP2 between the flow control valve VL1 and the three-way valve VL2, Substrate processing system. 16. The method of claim 15,
The three-way valve VL2 includes a flexible member 74 and an internal flow path 71c through which the second inlet connects the first inlet and the outlet, and the flexible member 74 is closed Sealing the inside of the orifice OL1 during control, thereby separating the second inlet from the internal flow path 71c in the three-way valve VL2, and separating from the orifice OL1 during open control , whereby the second inlet in the three-way valve (VL2) communicates with the internal flow path (71c). 17. The method of claim 16,
The three-way valve VL2 further includes an orifice support portion 71d for supporting the orifice OL1 at the second inlet,
The internal flow path (71c) is partitioned so as to surround the orifice support (71d). 16. The method of claim 15,
The exhaust device (51) is connected to the substrate processing chamber (12). 19. The method according to any one of claims 15 to 18,
The exhaust mechanism includes an exhaust valve (VL3) disposed on the at least one exhaust passage (EL). 19. The method according to any one of claims 15 to 18,
The at least one exhaust flow path EL includes a small exhaust flow path EL1 and a large exhaust flow path EL2,
The exhaust mechanism includes a first exhaust valve VL4 disposed on the large exhaust passage EL2 and a second exhaust valve VL3 disposed on the small exhaust passage EL1 , The substrate processing system .

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