KR20180006856A - Gas supply system, substrate processing system and gas supply method - Google Patents

Abstract

The present invention provides a gas supply system improved to perform a process by controlling a plurality of gases. The gas supply system supplying gas to a chamber of a substrate processing apparatus comprises: a first flow path connecting a first gas source of a first gas with the chamber; a second flow path connecting a second gas source of a second gas with the first flow path; a control valve positioned in the second flow path to control a flow amount of the second gas to a predetermined amount; an orifice positioned downstream of the control valve and positioned at an end of the second flow path; an opening and closing valve positioned at a connection point between the first flow path and the end of the second flow path to control supply timing for the second gas supplied from an outlet of the orifice to the first flow path; an exhaust mechanism connected to a flow path, which is positioned between the control valve and the orifice, of the second flow path to discharge the second gas; and a controller operating the control valve, the opening and closing valve and the exhaust mechanism.

Description

TECHNICAL FIELD [0001] The present invention relates to a gas supply system, a substrate processing system, and a gas supply method,

The present invention relates to a gas supply system, a substrate processing system, and a gas supply method.

Patent Document 1 discloses a pressure type flow rate control apparatus. The pressure type flow rate control device includes a control valve for controlling the flow rate of the gas in a predetermined amount, an orifice provided downstream of the control valve, a temperature sensor and a pressure sensor disposed between the control valve and the orifice, And a control circuit for controlling the opening and closing amount of the control valve on the basis of the reference value. In the pressure type flow rate control apparatus, the temperature-corrected flow rate is calculated by the control circuit based on the sensor detection value. Then, the control circuit controls the valve so that the calculated flow rate and the object value are compared by the control circuit, and the difference is reduced.

Patent Document 1: International Publication No. 2015/064035

Incidentally, in the substrate processing process, a plurality of gases may be used for processing. For example, the gases of a plurality of gas sources may be supplied to the chamber by merging or changing the gas used for each step.

In order to realize such a process, for example, as shown in Fig. 28, an open / close valve 102 is disposed on the downstream side of the pressure type flow rate control device FC3 for controlling the gas flow rate of the gas supply source 100 It is conceivable to use the on-off valve 102 for the selection of the gas to be mixed, or for the change of the gas supplied to the chamber. 29, the second gas flow path 104 is joined to the first gas flow path 103 at the connection point 105 and supplied as a mixed gas to the chamber, as shown in Fig. 29 I think.

28, the gas is stored in the flow path between the orifice 101 and the opening / closing valve 102 in the flow path 103 when the opening / closing valve 102 is closed. Since such a residual gas can not control the pressure and the flow rate, when the open / close valve 102 is opened, the gas is supplied to the chamber in a state where the flow rate is not controlled. 29, when the pressure of the first gas flowing through the flow path 103 is larger than the pressure of the second gas flowing through the flow path 104, the second gas is supplied to the open / close valve 102A and the connection point 105 may take time to fill the flow path. Thus, in order to control a plurality of gases and execute the process, the gas supply system has room for improvement.

A gas supply system according to one aspect of the present invention is a gas supply system for supplying a gas to a chamber of a substrate processing apparatus, comprising: a first flow path connecting a first gas source of the first gas and a chamber; A control valve provided in the second flow path for controlling the flow rate of the second gas in a predetermined amount; an orifice provided downstream of the control valve and provided at the end of the second flow path; An open / close valve provided at a connection point between the first flow path and the second flow path for controlling the supply timing of the second gas supplied from the outlet of the orifice to the first flow path; An exhaust mechanism connected to the flow path of the first gas and exhausting the second gas, and a controller for operating the control valve, the on-off valve, and the exhaust mechanism.

In this gas supply system, an orifice is provided downstream of the control valve and at the end of the second flow path, and an opening / closing valve is provided at the connection point between the first flow path and the end of the second flow path. That is, since the orifice and the on-off valve are disposed at the connection point between the first flow path and the end of the second flow path, the flow path from the orifice to the on-off valve can be minimized. Thus, when the open / close valve is opened, the gas stored in the flow path from the orifice to the open / close valve can be prevented from being supplied to the chamber without being controlled in flow rate. Further, since the opening / closing valve is provided at the connection point between the first flow path and the end of the second flow path, the flow path from the opening / closing valve to the connection point can be minimized. Thus, even when the pressure of the gas flowing through the first flow path is larger than the pressure of the gas flowing through the second flow path, it is possible to avoid the time required for the second gas to fill the flow path between the opening and closing valve and the connection point. In addition, since the exhaust mechanism for exhausting the second gas is connected to the flow path between the control valve and the orifice in the second flow path, for example, by closing the open / close valve and operating the exhaust mechanism, The flow path between the control valve and the orifice can be filled with the gas of the predetermined target pressure. This makes it possible to omit the time until the flow path between the control valve and the orifice is filled with the gas of the predetermined target pressure after the opening / closing valve is opened, and thus the response is excellent.

In one embodiment, the opening / closing valve may have a sealing member which is pressed against the orifice to seal the outlet of the orifice at the time of closing control, and is separated from the orifice at the time of opening control. With this configuration, the outlet of the orifice can be opened and closed.

In one embodiment, the opening and closing valve includes a cylinder for fixedly supporting the sealing member, a biasing member for resiliently biasing the cylinder in the direction in which the sealing member is in pressure contact with the orifice, and a cylinder for moving the cylinder in the direction opposite to the direction of pressure contact A driving unit may be provided. With such a configuration, the driving unit can move the sealing member, which is in pressure contact with the orifice through the cylinder, by the biasing member in the direction opposite to the direction in which the sealing member is in pressure contact, thereby opening the outlet of the orifice.

In one embodiment, the orifice and the on-off valve may be disposed on the downstream side of an inlet block provided in the chamber. Since the orifice and the on-off valve are located on the downstream side of the inlet block, that is, on the chamber side than the inlet block, gas can be controlled at a position closer to the chamber, as compared with the case where the inlet block and the inlet block are located on the upstream side of the inlet block. Therefore, the responsiveness of the gas supplied to the chamber can be improved.

In one embodiment, the orifice and the on-off valve may be arranged on the upstream side of the inlet block provided in the chamber. In such a configuration, the constituent elements located from the control valve to the on-off valve can be formed into a unit, so that handling of each constituent element is facilitated.

In one embodiment, the exhaust mechanism includes a small exhaust flow passage connected to the second flow passage and having a first displacement amount, and a small exhaust flow passage connected to the second flow passage and having a second displacement larger than the first displacement, ) Exhaust passage, and a first exhaust valve provided in the large exhaust passage for controlling the exhaust timing. With this configuration, the exhaust timing can be controlled for each exhaust flow path, so that the pressure can be adjusted delicately in the flow path between the control valve and the orifice.

In one embodiment, the exhaust mechanism may further include a second exhaust valve provided in the small-volume exhaust passage and controlling the exhaust timing. With this configuration, the exhaust timing can be controlled for each exhaust passage, so that the pressure can be adjusted more delicately in the flow path between the control valve and the orifice.

In one embodiment, the exhaust mechanism may be connected to the orifice side in the flow path between the control valve and the orifice. With this configuration, it is possible to reduce the pressure adjustment error as compared with the case where the exhaust mechanism is connected to the control valve side in the flow path between the control valve and the orifice.

In one embodiment, the gas supply system further comprises a pressure detector for detecting the pressure of the second gas in the flow path between the control valve and the orifice in the second flow path, and the pressure detector comprises a control valve and an orifice And the control valve may control the flow rate of the second gas based on the detection result of the pressure detector. With this configuration, the error of the flow rate adjustment can be reduced as compared with the case where the pressure detector is located on the control valve side in the flow path between the control valve and the orifice.

In one embodiment, the gas supply system further comprises a temperature detector for detecting the temperature of the second gas in the flow path between the control valve and the orifice in the second flow path, and the temperature detector comprises a control valve and an orifice And the control valve may control the flow rate of the second gas based on the detection result of the temperature detector. With this configuration, the error of the flow rate adjustment can be reduced as compared with the case where the temperature detector is located on the control valve side in the flow path between the control valve and the orifice.

In one embodiment, in the case where the second gas of the target flow rate is supplied to the first flow path at the target supply timing, in the predetermined period until the target supply timing is reached, the controller closes the open / The control valve may be controlled to cause the second gas of the target flow rate to flow, and the on / off valve may be opened when the target supply timing is reached. With this configuration, the time required until the flow path between the control valve and the orifice is filled with the gas of the predetermined target pressure after the opening / closing valve is opened can be omitted, and therefore, the response is excellent.

In one embodiment, the gas supply system further includes a control unit for obtaining a control value of the control valve, wherein the control valve is configured to control the valve body, the valve seat, and the valve seat, The control unit may determine opening / closing of the opening / closing valve based on the control voltage of the piezoelectric element. Although the supply operation of the gas can be confirmed by the control pressure value, it is difficult to judge the normal operation of the gas supply when constant flow output is always performed. A method of determining opening and closing of the opening / closing valve by providing a magnetic proximity sensor or the like in the actuator of the opening / closing valve is also conceivable, but the number of parts is increased and the configuration is complicated. In this gas supply system, the piezoelectric element of the control valve operates so as to follow the opening and closing of the opening / closing valve. Thus, by using the control voltage of the piezoelectric element of the control valve, it is possible to easily determine the opening and closing of the valve.

In one embodiment, the control unit may compare the obtained control voltage with a reference value of a predetermined control voltage, and output an alarm according to the comparison result. With this configuration, it is possible to output an alarm when the open / close valve is not performing a predetermined operation.

The substrate processing system according to another aspect of the present invention includes the gas supply system described above, and can process the substrate using the gas supply system described above.

According to another aspect of the present invention, there is provided a gas supply method including a first flow path for connecting a first gas source of a first gas to a chamber, a second flow path for connecting a second gas source of the second gas to the first flow path, A control valve provided in the second flow path for controlling the flow rate of the second gas to a predetermined amount; an orifice provided downstream of the control valve and provided at the end of the second flow path and connected to the end of the first flow path and the second flow path; An open / close valve for controlling the supply timing of the second gas supplied from the outlet of the orifice to the first flow path; an exhaust mechanism connected to the flow path between the control valve and the orifice in the second flow path for exhausting the second gas; A gas supply method for supplying a gas to a chamber of a substrate processing apparatus using a gas supply system including a control valve, an on-off valve, and a controller for operating an exhaust mechanism, A preparation step of controlling the control valve to flow the second gas at a target flow rate while the exhaust mechanism is operated; and a control step of controlling the control valve so as to open the opening / closing valve when the target supply timing is reached, And a supply step of supplying the second gas to the first flow path.

The gas supply method according to another aspect of the present invention has the same effect as the gas supply system described above.

According to various aspects and embodiments of the present invention, an improved gas supply system can be provided for controlling a plurality of gases to perform a process.

1 is a schematic diagram of a gas supply system according to the first embodiment.
2 is a cross-sectional view schematically showing an on-off valve.
3 is a view schematically showing the lower structure of the on-off valve.
4 is a cross-sectional view schematically showing the substrate processing system according to the first embodiment.
5 is a diagram showing the opening and closing timings of the first gas secondary valve and the second gas opening / closing valve.
6 is a diagram showing the flow rate of the second gas passing through the second gas control valve, the on-off valve, and the exhaust valve.
7 is a schematic diagram of a gas supply system according to the second embodiment.
8 is a diagram showing the flow rate of the second gas passing through the second gas control valve, the on-off valve, and the exhaust valve.
9 is a schematic diagram of a gas supply system according to the third embodiment.
10 is a diagram showing an example of opening and closing timings of a plurality of open / close valves.
11 is a diagram showing another example of opening and closing timings of a plurality of open / close valves.
12 is a view for explaining input to a control circuit corresponding to a recipe and a recipe;
13 is a view for explaining an example of opening / closing control of a valve with respect to an input.
Fig. 14 is a view for explaining another example of opening / closing control of the valve with respect to the input.
15 is a view for explaining another example of opening and closing control of a valve with respect to an input.
16 is a schematic diagram of a gas supply system according to the fourth embodiment.
17 is a diagram showing an example of the configuration of a control valve.
18 is a view for explaining the opening / closing confirmation of the opening / closing valve.
19 is a system outline diagram when the influence of the detection position of the pressure detector on the flow rate is evaluated.
Fig. 20 shows the evaluation results evaluated in the system configuration of Fig.
21 is a system outline diagram when the influence of the detection position of the pressure detector on the flow rate control is evaluated.
Fig. 22 shows the evaluation results evaluated in the system configuration of Fig.
Fig. 23 is a system overview diagram when the influence of the detection position of the temperature detector on the flow rate is evaluated.
Fig. 24 shows the evaluation results evaluated in the system configuration of Fig.
Fig. 25 shows the result of converting the graph of Fig. 24 based on the data at 25 DEG C in Fig.
Fig. 26 is a schematic diagram showing components that evaluate the influence on the flow rate control.
Fig. 27 shows the evaluation results of the respective components shown in Fig.
28 is a schematic diagram of a conventional gas supply system.
29 is a schematic diagram of a conventional gas supply system.

Hereinafter, various embodiments will be described in detail with reference to the drawings. In the drawings, the same or equivalent parts are denoted by the same reference numerals.

[First Embodiment]

1 is a schematic view of a gas supply system 1 according to a first embodiment. The gas supply system 1 shown in Fig. 1 is a system for supplying gas to the chamber 12 of the substrate processing apparatus. The gas supply system 1 has a first flow path L1 and a second flow path L2. The first flow path (L1) connects the first gas source (GS1) of the first gas and the chamber (12). The second flow path connects the second gas source GS2 of the second gas and the first flow path L1. The second flow path L2 joins the first flow path L1 at the connection point PP1. The first flow path L1 and the second flow path L2 are formed by, for example, piping. The first gas may be supplied to the chamber 12 at a greater flow rate than the second gas. The first gas and the second gas are optional. The first gas may be, for example, a carrier gas. The carrier gas is, for example, Ar gas, N ₂ gas or the like.

The pressure type flow rate control device FC1 may be disposed on the downstream side of the first gas source GS1 in the first flow path L1 and on the upstream side of the connection point with the second flow path L2. A primary valve (not shown) is provided on the upstream side of the pressure type flow control device FC1, and a secondary valve (not shown) is provided on the downstream side of the pressure type flow control device FC1. The pressure type flow rate control device FC1 has a control valve, a pressure detector, a temperature detector, an orifice, and the like. The control valve is provided downstream of the primary valve. The orifice is located downstream of the control valve and upstream of the secondary valve. The pressure detector and the temperature detector are configured to measure the pressure and the temperature in the flow path between the control valve and the orifice. The pressure type flow rate control device FC1 controls the pressure of the flow path upstream of the orifice by controlling the control valve in accordance with the pressure and the temperature measured by the pressure detector and the temperature detector. When the so-called critical expansion condition of P ₁ / P ₂ ? About 2 is maintained between the upstream pressure P ₁ and the downstream pressure P ₂ of the orifice, the gas flow rate Q flowing through the orifice is Q = KP ₁ (K is a constant stage) and this, again, in the case that is not the critical expansion conditions are met, the gas flow rate (Q) flowing through the orifice ^{_{Q = KP 2 m (P 1}} -P 2) n ( Where K, m, and n are constants). Therefore, by controlling the upstream pressure P _{1, it} is possible to control the gas flow rate Q with high accuracy, and even when the pressure of the upstream side gas of the control valve largely changes, the control flow value hardly changes . The first gas of the first gas source GS1 is adjusted in flow rate by the pressure type flow rate control device FC1 and is supplied to the chamber 12 through the connection point PP1 with the second flow path L2 .

A control valve VL1, an orifice OL1 and an on-off valve VL2 are arranged in this order on the downstream side of the second gas source GS2 in the second flow path L2.

The control valve VL1 is provided in the second flow path L2 to control the flow rate of the second gas to a predetermined amount. The control valve VL1 has the same function as the control valve provided in the pressure type flow rate control device FC1. The pressure and temperature of the flow path between the control valve VL1 and the orifice OL1 can be detected by the pressure detector PM and the temperature detector TM.

The pressure detector PM detects the pressure of the second gas in the flow path between the control valve VL1 and the orifice OL1 in the second flow path L2. The pressure detector PM may be located on the side of the orifice OL1 in the flow path between the control valve VL1 and the orifice OL1. That is, the length of the flow path between the pressure detector PM and the orifice OL1 may be shorter than the length of the flow path between the control valve VL1 and the pressure detector PM. Since the pressure detector PM is located on the side of the orifice OL1 in the flow path between the control valve VL1 and the orifice OL1, the error of the flow rate adjustment can be reduced as compared with the case where the pressure detector PM is located on the control valve side .

The temperature detector TM detects the temperature of the second gas in the flow path between the control valve VL1 and the orifice OL1 in the second flow path L2. The temperature detector TM may be located on the side of the orifice OL1 in the flow path between the control valve VL1 and the orifice OL1. That is, the length of the flow path between the temperature detector TM and the orifice OL1 may be shorter than the length of the flow path between the control valve VL1 and the temperature detector TM. Since the temperature detector TM is located on the side of the orifice OL1 in the flow path between the control valve VL1 and the orifice OL1, the error of the flow rate adjustment can be reduced as compared with the case where the temperature detector TM is located on the control valve side .

The control valve VL1 controls the flow rate of the second gas based on the detection results of the pressure detector PM and the temperature detector TM. As a more specific example, the control circuit C2 determines the operation of the control valve VL1. The control circuit C2 inputs the pressure and temperature detected by the pressure detector PM and the temperature detector TM and performs temperature correction and flow rate calculation of the detected pressure. Then, the control circuit C2 compares the set target flow rate with the calculated flow rate, and determines the operation of the control valve VL1 so that the difference becomes small. Further, a primary valve may be provided between the second gas source GS2 and the control valve VL1.

The orifice OL1 is provided downstream of the control valve VL1 and at the end L21 of the second flow path L2. The orifice OL1 has the same function as the orifice provided in the pressure type flow rate control device FC1. The opening and closing valve VL2 is provided at a connection point PP1 between the first flow path L1 and the end point L21 of the second flow path L2 and is supplied from the outlet of the orifice OL1 to the first flow path L1 Of the second gas. The on-off valve VL2 has a function of controlling the supply timing of the second gas while passing the first gas. The details of the construction of the on-off valve VL2 will be described later. The flow rate of the second gas of the second gas source GS2 is adjusted by the control valve VL1 and the orifice OL1 and the opening of the opening and closing valve VL2 in the connection point PP1 with the first flow path L1 And is supplied to the chamber 12 through the first flow path L1.

The gas supply system 1 is provided with an exhaust mechanism E for exhausting the second gas, which is connected to the flow path between the control valve VL1 and the orifice OL1 in the second flow path L2. The exhaust mechanism E is connected to the second flow path L2 through the exhaust flow path EL. The exhaust passage EL is connected to the connection point PP2 between the control valve VL1 and the orifice OL1 in the second flow path L2. The exhaust mechanism E may be connected to the side of the orifice OL1 in the flow path between the control valve VL1 and the orifice OL1. That is, the length of the flow path between the connection point PP2 and the orifice OL1 may be shorter than the flow path length between the control valve VL1 and the connection point PP2. Since the exhaust mechanism E is connected to the side of the orifice OL1 in the flow path between the control valve VL1 and the orifice OL1 as compared with the case where the exhaust mechanism E is connected to the control valve VL1 side, Can be reduced.

The exhaust mechanism E may include an orifice OL2 and an exhaust valve VL3 (an example of a second exhaust valve). The orifice OL2 has the same function as the orifice provided in the pressure type flow control device FC1. Further, the exhaust passage (EL) provided with the orifice (OL2) is also referred to as a small exhaust passage. The exhaust flow path EL is connected to an exhaust device 51 for exhausting the chamber 12. Further, the exhaust passage EL may be connected to another exhaust device. The exhaust valve VL3 is provided in the exhaust passage EL so that the exhaust timing can be controlled. When the exhaust valve VL3 is opened, the second gas whose flow rate is controlled by the orifice OL2 in the second gas existing in the flow path between the control valve VL1 and the orifice OL1 is discharged from the exhaust flow path EL Exhausted.

The gas supply system 1 is provided with a controller C1 for operating the control valve VL1, the on-off valve VL2 and the exhaust mechanism E. The controller C1 is a computer having a processor, a storage unit, an input device, a display device, and the like. The controller C1 receives the recipe stored in the storage unit and outputs a signal to the control circuit C2 that operates the control valve VL1. The controller (C1) receives the recipe stored in the storage unit and controls the opening and closing operation of the opening / closing valve (VL2). The controller (C1) receives the recipe stored in the storage unit and controls the exhaust mechanism (E). For example, the controller C1 can operate the exhaust valve VL3 through the control circuit C2.

The orifice OL1 and the on-off valve VL2 can be disposed on the downstream side of the inlet block 55 provided in the chamber 12. For example, the inlet block 55 is disposed on the downstream side of the pressure type flow rate control device FC1 in the first flow path L1 and on the upstream side of the connection point PP1 with the second flow path L2 do. Likewise, the inlet block 55 is disposed between the control valve VL1 and the orifice OL1. The inlet block 55 has a passage formed therein and connects the pipe on the upstream side of the inlet block 55 and the pipe or chamber 12 on the downstream side of the inlet block 55. [ The inlet block 55 is detached when the chamber 12 is opened to the atmosphere, thereby dividing the connected piping or separating the chamber 12 and the piping. Further, the downstream side (the chamber 12 side) than the inlet block 55 may be evacuated to the atmosphere or below. The inlet block 55 of the first flow path may be the same as or different from the inlet block 55 of the second flow path. The orifice OL1 and the on-off valve VL2 are located on the downstream side of the inlet block 55, that is, on the chamber 12 side with respect to the inlet block 55, So that the gas can be controlled at a position closer to the chamber 12. Therefore, the responsiveness of the gas supplied to the chamber 12 can be improved.

The control valve VL1 and control circuit C2 provided on the second gas source GS2 side with respect to the inlet block 55 may be unitized (unit U1 in the drawing). The orifice OL1 and the on-off valve VL2 provided on the chamber 12 side with respect to the inlet block 55 may be unitized (unit U2 in the drawing). Unitization is integrated as one component. Further, the unit U2 may include a pressure detector PM and a temperature detector TM. The unit U2 may include a part of the exhaust passage described later.

Next, the construction of the on-off valve VL2 will be described in detail. 2 is a cross-sectional view schematically showing the on-off valve VL2. The on-off valve VL2 is disposed on the first flow path L1. As shown in Fig. 2, the on-off valve VL2 includes a lower main body portion 71 and an upper main body portion 72. As shown in Fig. Between the lower main body part 71 and the upper main body part 72, a sealing member 74 exhibiting a valve function is disposed. The lower main body portion 71 defines a flow path for flowing the gas therein. The upper body portion 72 has a component for operating the sealing member 74. [ The sealing member 74 may be composed of a flexible member. The sealing member 74 may be, for example, an elastic member, a diaphragm, a bellows, or the like.

The lower main body portion 71 defines therein a flow passage which becomes a part of the first flow path L1. As a specific example, the lower main body portion 71 has an inlet 71a and an outlet 71b, and has an internal passage 71c extending from the inlet 71a to the outlet 71b. The lower main body portion 71 has an end L21 of the second flow path L2 therein. That is, the orifice OL1 provided at the end L21 is accommodated in the lower main body portion 71. [ The first flow path L1 and the second flow path L2 join together in the lower main body portion 71. [ The opening and closing valve VL2 controls the timing at which the second gas joins the first flow path by opening and closing the end L21 of the second flow path L2 with the sealing member 74. [

As a specific example, an orifice support portion 71d for supporting the orifice OL1 is formed in the inner flow path 71c. The orifice support portion 71d protrudes from the inner wall of the inner flow path 71c toward the upper main body portion 72 side (the sealing member 74 side) of the inner flow path 71c. The orifice support portion 71d has an inlet 71e and an outlet 71f and has an internal passage 71g extending from the inlet 71e to the outlet 71f. The internal flow path 71g constitutes a part of the second flow path L2. An orifice OL1 is provided at the outlet 71f of the orifice support portion 71d which is the end L21 of the second flow path L2. A sealing portion 75 protruding toward the upper main body portion 72 side (sealing member 74 side) of the orifice OL1 is provided around the orifice OL1.

The upper main body portion 72 has a component for controlling the distance between the sealing member 74 and the orifice OL1. As a specific example, the upper main body portion 72 has a cylinder 76, a biasing member 78, and a driving portion 81.

The cylinder 76 fixedly supports the sealing member 74 and is housed inside the upper main body portion 72. For example, the cylinder 76 fixes the sealing member 74 at the lower end thereof. The cylinder (76) has a protrusion (76a) having a large diameter toward the outside. The cylinder 76 has a passage 76b therein. A seal member 79 is provided between the side surface of the projecting portion 76a and the inner wall of the upper main body portion 72 and between the side surface of the cylinder 76 below the projecting portion 76a and the inner wall of the upper main body portion 72, Respectively. The space 82 is partitioned by the inner wall of the upper main body portion 72, the side wall of the cylinder 76, the lower surface of the projecting portion 76a, and the seal member 79. And the flow path 76b of the cylinder 76 communicates with the space 82. [

The biasing member 78 resiliently biases the cylinder 76 in the direction in which the sealing member 74 is in pressure contact with the orifice OL1. For example, the cylinder 76 is biased toward the lower main body portion 71 side (orifice OL1 side). More specifically, the urging member 78 applies an urging force to the upper surface of the projecting portion 76a of the cylinder 76 downward. The urging member 78 presses the sealing member 74 against the orifice OL1 so as to seal the outlet 73 of the orifice OL1. In this way, the action of the urging member 78 causes the second flow path to be closed (closing control). The biasing member 78 is made of, for example, an elastic body. As a specific example, the biasing member 78 is a spring.

The driving unit 81 moves the cylinder 76 in the direction opposite to the direction in which it is in pressure contact. The driving unit 81 supplies air to the flow path 76b of the cylinder 76 to fill the space 82 with air. When the pressure of the air filled in the space 82 is larger than the urging force of the biasing member 78, the cylinder 76 rises together with the sealing member 74. That is, the sealing member 74 is separated from the orifice OL1 by the driving unit 81. [ Thus, the second flow path is opened by the drive unit 81 (open control).

The internal flow path 71c of the lower main body portion 71 has a structure which is not closed by the operation of the sealing member 74. [ That is, the first flow path L1 is not closed depending on the operation of the sealing member 74, and is always in a communicating state. 3 schematically shows the lower structure of the on-off valve VL2. As shown in Fig. 3, the internal flow path 71c is formed so as to surround the periphery of the orifice support portion 71d. The first gas passes through the side of the orifice support portion 71d when the sealing member 74 is in pressure contact with the orifice OL1 and when the sealing member 74 is separated from the orifice OL1, And passes through the side and the upper side of the upper surface 71d. As described above, the sealing member 74 realizes opening and closing of the second flow path L2 without affecting the flow of the first flow path L1.

As described above, in the gas supply system 1, the orifice OL1 is provided downstream of the control valve VL1 and at the end L21 of the second flow path L2, and the opening / closing valve VL2 is connected to the first flow path L1 And the end point L21 of the second flow path L2. That is, since the orifice OL1 and the on-off valve VL2 are disposed at the connection point PP1 between the first flow path L1 and the end L21 of the second flow path L2, The flow path to the valve VL2 can be minimized. Thereby, when the opening / closing valve VL2 is opened, the gas stored in the flow path from the orifice OL1 to the opening / closing valve VL2 can be prevented from being supplied to the chamber without the flow rate control.

In the gas supply system 1, since the open / close valve VL2 is provided at the connection point PP1 between the first flow path L1 and the end L21 of the second flow path L2, VL2 to the connection point PP1 can be minimized. Thereby, even when the pressure of the gas flowing through the first flow path L1 is larger than the pressure of the gas flowing through the second flow path L2, the second gas flows into the space between the opening / closing valve VL2 and the connection point PP1 It can be avoided that it takes time to fill up.

In the gas supply system 1, since the exhaust mechanism E for exhausting the second gas is connected to the flow path between the control valve VL1 and the orifice OL1 in the second flow path L2, For example, the flow path between the control valve VL1 and the orifice OL1 is set to a predetermined (predetermined or predeterminable) state in a state in which the supply of the gas to the chamber 12 is stopped by closing the open / close valve VL2 and operating the exhaust mechanism E. [ Of the target pressure. This makes it possible to omit the time until the flow path between the control valve VL1 and the orifice OL1 is filled with the gas of the predetermined target pressure after the opening and closing valve VL2 is opened, Do.

Hereinafter, a plasma processing apparatus according to an embodiment will be described as a substrate processing apparatus (substrate processing system) having a gas supply system 1. FIG. 4 schematically shows a plasma processing apparatus according to an embodiment. The plasma processing apparatus 10 shown in Fig. 4 is a capacitively coupled plasma processing apparatus, and is used as plasma processing, for example, for plasma etching.

The plasma processing apparatus 10 is provided with a chamber 12. The chamber 12 has a substantially cylindrical shape. The chamber 12 is made of, for example, aluminum, and an inner wall surface thereof is anodized. This chamber 12 is securely grounded. The ground conductor 12a is mounted on the upper end of the side wall of the chamber 12 so as to extend upward from the side wall. The ground conductor 12a has a substantially cylindrical shape. A loading and unloading port 12g of a substrate (hereinafter referred to as "wafer W") is provided on the side wall of the chamber 12. The loading and unloading port 12g is opened and closed by a gate valve 54 .

On the bottom of the chamber 12, there is provided a substantially cylindrical support 14. The support portion 14 is made of, for example, an insulating material. The support portion 14 extends in the chamber 12 from the bottom of the chamber 12 in the vertical direction. In the chamber 12, a mounting table PD is provided. The table (PD) is supported by the support portion (14).

The table PD supports the wafer W on its upper surface. The mounting table PD has a lower electrode LE and an electrostatic chuck ESC. The lower electrode LE includes a first plate 18a and a second plate 18b. The first plate 18a and the second plate 18b are made of, for example, metal such as aluminum and have a substantially disk shape. The second plate 18b is provided on the first plate 18a and is electrically connected to the first plate 18a.

An electrostatic chuck (ESC) is provided on the second plate 18b. The electrostatic chuck ESC has a structure in which an electrode serving as a conductive film is disposed between a pair of insulating layers or insulating sheets. A DC power supply 22 is electrically connected to an electrode of the electrostatic chuck ESC via a switch 23. [ The electrostatic chuck ESC sucks the wafer W by electrostatic force such as Coulomb force generated by a DC voltage from the DC power supply 22. Thereby, the electrostatic chuck ESC can support the wafer W.

A focus ring FR is disposed on the periphery of the second plate 18b so as to surround the edge of the wafer W and the electrostatic chuck ESC. The focus ring FR is provided to improve the uniformity of plasma processing. The focus ring FR may be made of a material such as, for example, silicon, quartz, or SiC.

A refrigerant passage (24) is provided in the second plate (18b). The refrigerant flow path 24 constitutes a temperature adjusting mechanism. The refrigerant is supplied to the refrigerant passage 24 from the chiller unit provided outside the chamber 12 through the pipe 26a. The refrigerant supplied to the refrigerant passage (24) is returned to the chiller unit through the pipe (26b). Thus, the refrigerant is supplied to the refrigerant passage 24 so as to circulate the refrigerant. By controlling the temperature of the refrigerant, the temperature of the wafer W supported by the electrostatic chuck ESC is controlled.

In the plasma processing apparatus 10, a gas supply line 28 is provided. The gas supply line 28 supplies a heat transfer gas, for example, He gas, from a heat transfer gas supply mechanism between the upper surface of the electrostatic chuck ESC and the back surface of the wafer W.

The plasma processing apparatus 10 is provided with a heater HT as a heating element. The heater HT, for example, is embedded in the second plate 18b. A heater power supply HP is connected to the heater HT. Power is supplied from the heater power source HP to the heater HT so that the temperature of the table PD is adjusted and the temperature of the wafer W placed on the table PD is adjusted. Further, the heater HT may be built in the electrostatic chuck ESC.

The plasma processing apparatus 10 includes an upper electrode 30. The upper electrode 30 is disposed above the mounting table PD and opposed to the mounting table PD. The lower electrode LE and the upper electrode 30 are provided approximately parallel to each other. Between the upper electrode 30 and the table PD, a processing space S for performing plasma processing on the wafer W is provided.

The upper electrode 30 is supported on the upper portion of the chamber 12 through the insulating shield member 32. [ In one embodiment, the upper electrode 30 can be configured to vary the distance in the vertical direction from the upper surface of the mounting table PD, that is, the wafer mounting surface. The upper electrode 30 may include a top plate 34 and a support 36. The top plate 34 faces the process space S and the top plate 34 is provided with a plurality of gas discharge holes 34a. The top plate 34 may be made of silicon or silicon oxide. Alternatively, the top plate 34 may be formed by applying a coating of ceramics to a base material of conductive (e.g., aluminum).

The support body 36 detachably supports the top plate 34 and may be made of a conductive material such as aluminum. The support body 36 may have a water-cooling structure. A gas diffusion chamber (36a) is provided in the support (36). The gas diffusion chamber 36a is connected to the merging pipe (first flow path L1) of the gas supply system 1. [

The support body 36 is formed with a plurality of communication holes 36b for connecting the gas diffusion chamber 36a and a plurality of gas discharge holes 34a extending below the gas diffusion chamber 36a. The upper electrode 30 having such a configuration constitutes a showerhead SH.

In the plasma processing apparatus 10, a deposition shield 46 is detachably provided along the inner wall of the chamber 12. The deposition shield (46) is also provided on the outer periphery of the support portion (14). The deposition shield 46 prevents deposition of by-products (deposits) of the plasma treatment on the chamber 12 and can be constituted by coating an aluminum material with ceramics such as Y ₂ O ₃ .

An exhaust plate 48 is provided between the support portion 14 on the bottom side of the chamber 12 and the side wall of the chamber 12. The exhaust plate 48 may be constituted by, for example, coating an aluminum material with ceramics such as Y ₂ O ₃ . In the exhaust plate 48, a plurality of through holes are formed. An exhaust port 12e is provided in the lower-side communication chamber 12 of the exhaust plate 48. [ An exhaust device 50 and an exhaust device 51 are connected to the exhaust port 12e through an exhaust pipe 52. [ In one embodiment, the exhaust device 50 is a turbo molecular pump, and the exhaust device 51 is a dry pump. The exhaust device 50 is provided on the upstream side of the exhaust device 51 with respect to the chamber 12. An exhaust passage (EL) of the gas supply system (1) is connected to a pipe between the exhaust device (50) and the exhaust device (51). The backflow of the gas from the exhaust passage EL into the chamber 12 is suppressed by connecting the exhaust passage EL between the exhaust device 50 and the exhaust device 51. [

The plasma processing apparatus 10 further includes a first high frequency power supply 62 and a second high frequency power supply 64. The first high frequency power source 62 is a power source for generating the first high frequency for plasma generation and generates a high frequency of 27 to 100 MHz, for example, 40 MHz. The first high frequency power source 62 is connected to the lower electrode LE through the matching unit 66. [ The matching device 66 has a circuit for matching the output impedance of the first high frequency power supply 62 with the input impedance of the load side (the lower electrode LE side).

The second high frequency power source 64 is a power source for generating a second high frequency wave for attracting ions to the wafer W, that is, a high frequency wave for bias. The second high frequency power source 64 is a second frequency power source for generating a high frequency wave in a frequency range of 400 kHz to 13.56 MHz, And generates high frequency waves. The second high frequency power supply 64 is connected to the lower electrode LE through the matching unit 68. [ The matching device 68 has a circuit for matching the output impedance of the second high frequency power supply 64 with the input impedance of the load side (the lower electrode LE side).

In one embodiment, the controller C1 shown in Fig. 1 controls each section of the plasma processing apparatus 10 for the plasma processing executed in the plasma processing apparatus 10. [

In this plasma processing apparatus 10, the gas supplied into the chamber 12 can be excited to generate plasma. Then, the wafer W can be processed by the active species. Further, the gas supply system 1 can supply the second gas to the chamber 12 at a second flow rate lower than the first flow rate, for example, while supplying the first gas at the first flow rate, Can supply. Therefore, it is possible to increase the throughput of the process of alternately performing the other plasma processing with respect to the wafer W.

Next, a gas supply method by the gas supply system 1 will be described. The gas supply method can be realized by operating the components by the controller C1. 5 is a diagram showing the opening and closing timings of the first gas secondary valve and the second gas opening / closing valve VL2. As shown in Fig. 5, the controller C1 opens the first gas secondary valve. Next, the controller C1 repeatedly opens and closes the on-off valve VL2 in a state in which the first gas secondary valve is opened. As one example of such a process, the first gas is a carrier gas and the second gas is a process gas necessary for the plasma treatment.

The gas supply system 1 controls opening and closing of the control valve VL1 and the exhaust valve VL3 in accordance with the opening / closing control of the opening / closing valve VL2. Specifically, when the controller C1 supplies the second gas of the target flow rate to the first flow path L1 at the target supply timing, the controller C1 controls the opening / closing valve VL2 in the predetermined period until the target supply timing, The control valve VL1 is controlled to flow the second gas at the target flow rate while the exhaust mechanism E is operated while closing the opening and closing valve when the target supply timing is reached.

6 is a graph showing the flow rate of the second gas passing through the second gas control valve VL1, the on-off valve VL2, and the exhaust valve VL3. In Fig. 6, the steps of the processing process are expressed by using a broken line, and the steps of the whole processing process are 15 in total. The opening / closing valve VL2 performs the opening / closing operation described with reference to Fig. 5, so that the second gas intermittently flows the opening / closing valve VL2, as shown in Fig. In Fig. 6, the controller C1 opens the on-off valve VL2 in steps 3, 5, 8, and 12 (an example of the target supply timing). The controller C1 controls the control valve VL1 and the exhaust valve VL2 in a state in which the open / close valve VL2 is closed in step 2 (an example of a predetermined period until the target supply timing is reached) The valve VL3 is opened, and the exhaust mechanism E is operated (preparation step). That is, in step 2, the second gas that has passed through the control valve VL1 is not supplied to the first flow path L1 but is exhausted through the exhaust flow path EL. At this time, the pressure and flow rate of the gas in the second flow path are controlled by the control valve VL1 to the set point value. The controller C1 can synchronize the control valve VL1 and the exhaust valve VL3 by an arbitrary method. For example, the controller C1 may be controlled to open the exhaust valve VL3 of the exhaust passage EL when the input flow rate to the control valve VL1 is greater than zero. The controller C1 may close the exhaust valve VL3 of the exhaust passage EL when the input flow rate to the control valve VL1 is zero.

The controller C1 keeps the open / close valve VL2 open when the target supply timing reaches Step 3 during the preparatory step, and supplies the second gas of the target flow rate to the first flow path (supply step). In this way, the flow path between the control valve VL1 and the orifice OL1 is maintained at a predetermined level by stopping the supply to the chamber 12 by closing the opening / closing valve VL2 and operating the exhaust mechanism E It can be filled with gas at the target pressure. This makes it possible to omit the time until the flow path between the control valve VL1 and the orifice OL1 is filled with the gas of the predetermined target pressure after the opening and closing valve VL2 is opened, Do.

[Second Embodiment]

The gas supply system 1A according to the second embodiment is different from the gas supply system 1 according to the first embodiment in that an exhaust mechanism EA is provided instead of the exhaust mechanism E, ) Are different from each other. In the second embodiment, differences from the first embodiment will be mainly described, and redundant description will be omitted.

Fig. 7 is a schematic view of the gas supply system 1A according to the second embodiment. The exhaust mechanism EA has a small exhaust passage EL1 and a large exhaust passage EL2 as an exhaust passage EL. The small exhaust flow path EL1 and the large discharge flow path EL2 are connected to the flow path between the control valve VL1 and the orifice OL1 in the second flow path. The small-volume exhaust passage EL1 has a smaller displacement than the large-volume discharge passage EL2. Specifically, the small-size exhaust passage EL1 is provided with an orifice OL2, and the exhaust amount is controlled to the first exhaust amount. An exhaust valve VL3 (an example of the second exhaust valve) for controlling the exhaust timing may be provided in the small exhaust flow path EL1. The large exhaust passage EL2 is exhausted at a second exhaust amount larger than the first exhaust amount. The large exhaust flow path EL2 is not provided with a device for controlling the flow rate. An exhaust valve VL4 (an example of the first exhaust valve) for controlling the exhaust timing may be provided in the large exhaust flow passage EL2. The exhaust mechanism EA can be controlled by the controller C1 via the control circuit C2 in the same manner as the exhaust mechanism E according to the first embodiment. Other configurations of the gas supply system 1A are the same as those of the gas supply system 1. The gas supply system 1A can be applied to the plasma processing apparatus 10.

Next, a gas supply method by the gas supply system 1A will be described. The gas supply method can be realized by operating the components by the controller C1. The opening and closing timings of the first gas secondary valve and the second gas opening and closing valve (VL2) are the same as in Fig. The gas supply system 1A controls opening and closing of the control valve VL1 and the exhaust valves VL3 and VL4 in accordance with the opening / closing control of the opening / closing valve VL2. Specifically, when the controller C1 supplies the second gas of the target flow rate to the first flow path L1 at the target supply timing, the controller C1 controls the opening / closing valve VL2 in the predetermined period until the target supply timing, The control device controls the control valve VL1 to flow the second gas at the target flow rate while the exhaust mechanism EA is operated while closing the opening and closing valve when the target supply timing is reached.

8 is a graph showing the flow rate of the second gas passing through the second gas control valve VL1, the on-off valve VL2, and the exhaust valves VL3 and VL4. Only the flow rate of the control valve VL1 shows the input flow rate IN and the output flow rate OUT to the control valve VL1. In Fig. 8, the steps of the processing process are expressed by broken lines, and the steps of the whole processing process are 15 in total. The opening / closing valve VL2 performs the opening / closing operation described with reference to Fig. 5, so that the second gas intermittently flows the opening / closing valve VL2, as shown in Fig. In Fig. 8, the controller C1 opens the on-off valve VL2 in steps 3, 5, 8, and 12 (an example of the target supply timing). The controller C1 carries out the preparation step and the supply step described in the gas supply method of the first embodiment.

Here, the controller C1 controls the exhaust mechanism EA as follows. The controller C1 opens the exhaust valve VL3 of the small-scale exhaust passage EL1 when the input flow rate to the control valve VL1 is larger than zero. The controller C1 closes the exhaust valve VL3 of the small exhaust passage EL1 when the input flow rate to the control valve VL1 is zero. The controller C1 controls the opening and closing of the exhaust valve VL4 of the large exhaust flow passage EL2 using the relationship between the input flow rate to the control valve VL1 and the output flow rate. As a specific example, the controller C1 opens the exhaust valve VL4 of the exhaust passage EL2 when the input flow rate becomes smaller than the output flow by a predetermined amount or less, and closes the exhaust valve VL4 in other cases. In Fig. 8, in steps 2 and 7, the input flow rate is not less than the output flow rate less than the predetermined flow rate, and in step 10 and step 14, the input flow rate is less than the output flow rate. As shown in Fig. 8, the controller C1 opens the exhaust valve VL4 of the large exhaust flow passage EL2 in step 10 and step 14 to increase the exhaust amount. Thus, since the exhaust timing can be controlled for each exhaust passage, the pressure can be delicately adjusted in the flow path between the control valve VL1 and the orifice OL1.

[Third embodiment]

The gas supply system 1B according to the third embodiment is different from the gas supply system 1 according to the first embodiment in that the third gas is further joined to the first flow path L1, The gas supply method by the controller C1 is different. In the third embodiment, differences from the first embodiment will be mainly described, and redundant description will be omitted.

Fig. 9 is a schematic diagram of the gas supply system 1B according to the third embodiment. The gas supply system 1B has a third flow path L3 for connecting the third gas source GS3 of the third gas to the first flow path L1.

A control valve VL41, an orifice OL3 and an on-off valve VL5 are arranged in order on the downstream side of the third gas source GS3 in the third flow path L3. The control valve VL41 has the same configuration as the control valve VL1 and is controlled by a control circuit (not shown) having the same configuration as the control circuit C2. The orifice OL3 has the same configuration as the orifice OL1. The on-off valve VL5 is provided on the connection point PP3 between the first flow path L1 and the third flow path L3 and has the same configuration as the on-off valve VL2. The flow rate of the third gas of the third gas source GS3 is adjusted by the control valve VL41 and the orifice OL3 so that the opening of the opening and closing valve VL5 in the connection point PP3 with the first flow path L1 And is supplied to the chamber 12 through the first flow path L1.

The gas supply system 1B is provided with an exhaust mechanism EB for exhausting the third gas, which is connected to the flow path between the control valve VL41 and the orifice OL3 in the third flow path L3. The exhaust mechanism EB is connected to the third flow path L3 through the exhaust flow path EL3. The exhaust flow path EL3 is connected to the connection point PP4 between the control valve VL41 and the orifice OL3 in the third flow path L3. The exhaust mechanism EB has the same structure as the exhaust mechanism E. The exhaust flow path EL3 is connected to the exhaust flow path EL at the connection point PP5. Further, the exhaust passage EL3 may be connected to another exhaust device.

The components for joining the above-described third gas to the first flow path L1 can be controlled by the controller C1 described in the first embodiment. The orifice OL3 and the on-off valve VL5 may be disposed on the downstream side of the inlet block 55 provided in the chamber 12. [ The orifice OL3 and the on-off valve VL5 provided on the chamber 12 side with respect to the inlet block 55 may be unitized (unit U3 in the figure). Further, the unit U3 may include a pressure detector PM and a temperature detector TM. The unit U3 may include a part of the exhaust passage EL3. The other configuration of the gas supply system 1B is the same as that of the gas supply system 1. The gas supply system 1B can be applied to the plasma processing apparatus 10.

Next, a gas supply method by the gas supply system 1B will be described. The gas supply method can be realized by operating the components by the controller C1. The opening and closing timing of the secondary valve for the first gas is arbitrary. That is, the first gas may be introduced or not. 10 is a diagram showing an example of opening and closing timings of the on-off valves VL2 and VL5. As shown in Fig. 10, the controller C1 alternately opens and closes the second gas opening / closing valve VL2 and the third gas opening / closing valve VL5. That is, the controller C1 periodically opens and closes the open / close valves VL2 and VL5, and shifts the opening / closing cycle. As one example of such a process, the first gas is a carrier gas, and the second gas and the third gas are processing gases necessary for plasma processing. In another example, the first gas is not introduced, and the second gas and the third gas are processing gases necessary for plasma processing. 11 is a view showing another example of opening and closing timings of the on-off valves VL2 and VL5. As shown in Fig. 11, the controller C1 may be opened and closed by synchronizing the second gas opening / closing valve VL2 and the third gas opening / closing valve VL5.

Next, a specific example in which the controller C1 reads and executes the recipe of the processing process will be described. The recipe is stored in advance in the storage unit of the controller C1. 12 is a diagram for explaining input to a control circuit corresponding to a recipe and a recipe; As shown in Fig. 12A, in the recipe, Ar gas (an example of the first gas), O ₂ gas (an example of the second gas), and C ₄ F ₆ The flow rate of the gas (an example of the third gas) is set in advance. In this recipe, the Ar gas as a carrier gas, step 1 to the C ₄ F ₆ gas is used as the O ₂ gas and C ₄ F supplied to ₆ gas in Step 3 and Step 5, and adding a gas as a feed, and the added gas from step 8 Supply it in step 8. The controller C1 reads out the recipe shown in Fig. 12 (A) from the storage unit, and controls the control circuit of the pressure type flow rate control device FC1 and the control And outputs a signal to the control circuit of the valve VL1.

The control process shown in FIG. 12 (B) is modified so as to supply the additive gas at the same flow rate as the supply step in the step immediately before the supply of the additive gas, based on the recipe (dotted portion in the drawing) . Specifically, the controller C1 changes the flow rate of the O ₂ gas in the second step from 0 [sccm] to 6 [sccm], the flow rate of the C ₄ F ₆ gas in the second step from 0 [sccm] 7.5 [sccm]. The controller C1 changes the flow rate of the O ₂ gas in the fourth step from 0 [sccm] to 6 [sccm], changes the flow rate of the C ₄ F ₆ gas in the fourth step from 0 [sccm] to 7.5 [ sccm]. Further, the controller C1 changes the flow rate of the C ₄ F ₆ gas in the seventh step from 0 [sccm] to 5.5 [sccm].

The controller C1 and the control circuit control each valve based on the input to the control circuit corresponding to the recipe shown in Fig. 12 (B). Since the control method of the valves for the second gas and the third gas is common, the control method of the second gas will be described below and the control method of the third gas will be omitted. The control method of the second gas only describes representative steps. 13 is a view for explaining an example of opening and closing control of a valve with respect to an input. 13 (A) shows the processing of the controller C1. As shown in Fig. 13A, in step N, the controller C1 inputs a recipe in which the second gas is supplied at a flow rate [? Sccm]. The controller C1 changes the input of the second gas to the flow rate? [Sccm] in step N-1 as an input (target setting) to the control circuit corresponding to the recipe. The controller (C1) determines the opening and closing states of the valves in the respective steps. The controller C1 directly controls the opening / closing valve VL2 and indirectly controls the control valve VL1 and the exhaust valve VL3 via the control circuit of the control valve VL1.

The controller C1 closes the control valve VL1, closes the on-off valve VL2, and closes the exhaust valve VL3 in step N-2. The controller C1 sets the control valve VL1 to open, the on-off valve VL2 to close, and the exhaust valve VL3 to open in step N-1. The controller C1 sets the control valve VL1 to open, the open / close valve VL2 to open, and the exhaust valve VL3 to open at step N. The controller C1 closes the control valve VL1, closes the on-off valve VL2, and closes the exhaust valve VL3 in step N + 1.

Then, the controller C1 opens and closes the on-off valve VL2 in each step so as to perform the set operation, and outputs a signal to the control circuit. The signal to the control circuit includes the open / closed state of the target flow amount (input), the control valve VL1 and the exhaust valve VL3. The control circuit controls the opening and closing of the control valve VL1 and the exhaust valve VL3 in accordance with the signal inputted from the controller C1.

FIG. 13B shows the processing of the control circuit to which a signal is input. As shown in Fig. 13B, in step N-2, the control circuit closes the control valve VL1 and the exhaust valve VL3. The controller C1 closes the on-off valve VL2. In step N-1, the control circuit opens the control valve VL1 and the exhaust valve VL3. Further, the control circuit controls the control valve VL1 so that the output flow rate becomes the flow rate? [Sccm] (self-control). Further, by opening the exhaust valve VL3, the exhaust flow rate is automatically controlled by the orifice (self-control). The controller C1 closes the on-off valve VL2. Thus, in step N-1, the second gas flows in the flow path between the control valve VL1 and the orifice OL1 at a flow rate of [sccm].

Subsequently, in step N, the control circuit opens the control valve VL1 and the exhaust valve VL3. Further, the control circuit controls the control valve VL1 so that the output flow rate becomes the flow rate [? Sccm] (self-control). Further, by opening the exhaust valve VL3, the exhaust flow rate is automatically controlled by the orifice (self-control). The controller C1 opens the on-off valve VL2. In this way, in step N, the second gas adjusted to the flow rate? [Sccm] in step N-1 is supplied to the first flow path L1. In step N + 1, the control circuit closes the control valve VL1 and the exhaust valve VL3. The controller C1 closes the on-off valve VL2. As a result, the supply of the second gas to the first flow path L1 is stopped. Thus, the controller C1 performs the preparation step and the supply step described in the gas supply method of the first embodiment.

14 is a view for explaining another example of opening and closing control of the valve with respect to the input. Fig. 14A shows a process of the controller C1. As shown in Fig. 14A, a recipe in which the second gas is supplied at the flow rate [? Sccm] in Step N and the second gas is supplied at the flow rate? In Step N + . The controller C1 changes the input of the second gas to the flow rate? [Sccm] in step N-1 as an input (target setting) to the control circuit corresponding to the recipe. Further, since the step immediately preceding the step N + 1 which is the supply step is the step N which is the supply step, the flow rate set in the step N is not changed. That is, when the supply step is continued, the preparation step is set only in the first supply step, and the subsequent processing is controlled without the preparation step. The other processes are the same as those described with reference to Fig. 13, and the process is executed as shown in Fig. 14 (B) in accordance with the setting contents shown in Fig. 14 (A).

Fig. 15 is a view for explaining another example of opening / closing control of a valve with respect to an input. Fig. 15A shows the processing of the controller C1. As shown in Fig. 15A, a recipe is given to the controller C1 in which the second gas is supplied at a flow rate [? Sccm] in Step N and the second gas is supplied at a flow rate? In Step N + 2, . The controller C1 supplies the second gas at a flow rate of [sccm] in step N-1 and the second gas in step N + 1 as the input (target setting) to the control circuit corresponding to the recipe It is supposed that it is supplied with the flow rate beta. The other processes are the same as those described with reference to Fig. 13, and the process is executed as shown in Fig. 15 (B) in accordance with the setting contents shown in Fig. 15 (A).

As described above, the gas supply system 1B can join a plurality of gases to the first flow path L1. The gas supply system 1B performs the preparation step and the supply step described in the gas supply method of the first embodiment in each of the second flow path L2 and the third flow path L3, Gas supply can be performed.

[Fourth Embodiment]

The gas supply system 1C according to the fourth embodiment is different from the gas supply system 1 according to the first embodiment in that the orifices OL1 and VL2 are located upstream of the inlet block 55 . In the fourth embodiment, differences from the first embodiment will be mainly described, and redundant description will be omitted.

16 is a schematic diagram of a gas supply system 1C according to the fourth embodiment. 16, in the gas supply system 1C, the connection point PP1 between the first flow path L1 and the second flow path L2 is located on the upstream side of the inlet block 55. As shown in Fig. The other configuration of the gas supply system 1C is the same as that of the gas supply system 1.

The control valve VL1, the control circuit C2, the orifice OL1 and the on-off valve VL2 provided on the second gas source GS2 side with respect to the inlet block 55 may be unitized Unit U4). Further, the unit U4 may include a pressure detector PM and a temperature detector TM. The unit U4 may include a part of the exhaust passage EL. As described above, the gas supply system 1C can unitize the components located from the control valve VL1 to the on-off valve VL2, thereby facilitating handling of each component.

Various embodiments have been described above, but the present invention is not limited to the above-described embodiments, and various modifications can be made. For example, the embodiments may be combined. Although the above-described substrate processing apparatus is a capacitively coupled plasma processing apparatus, the substrate processing apparatus may be an in-coupling type plasma processing apparatus or an arbitrary plasma processing apparatus such as a plasma processing apparatus using surface waves such as microwaves.

In the gas supply systems 1A and 1B, a unit comprising an orifice and an on-off valve may be located on the upstream side of the inlet block 55.

The above-described control valve VL1 operates based on the detection result of the pressure detector PM disposed on the upstream side of the on-off valve VL2, but is not limited thereto. For example, the detection result of a further added pressure detector may be used. The added pressure detector is disposed, for example, on the downstream side of the on-off valve VL2 to detect the pressure of the first flow path L1. Under the condition that the pressure of the second flow path L2 is twice or more the pressure of the first flow path L1, the control circuit C2 sets the difference between the calculated flow rate and the set flow rate, which is obtained from the measured pressure value of the pressure detector PM, The control valve VL1 is controlled. Under the condition that the pressure of the second flow path L2 is smaller than twice the pressure of the first flow path L1, the control circuit C2 controls the pressure difference between the measured pressure value of the pressure detector PM and the measured pressure value of the added pressure detector The control valve VL1 is controlled so as to reduce the difference between the calculated flow rate and the set flow rate obtained from the differential pressure between the pressure values. As described above, the above-described control valve VL1 may be operated by differential pressure control. Further, the added pressure detector may be assembled to the unit U2 of Fig. That is, the added pressure detector may be unitized together with the orifice OL1 and the on-off valve VL2. Alternatively, the added pressure detector may be assembled to the unit U4 in Fig. That is, the added pressure detector may be unitized together with the control valve VL1, control circuit C2, orifice OL1 and opening / closing valve VL2.

In the above-described embodiment, the above-described control valve VL1 can be used for confirming opening / closing of the opening / closing valve VL2. 17 is a diagram showing an example of the configuration of the control valve VL1. As shown in Fig. 17, the control valve VL1 has a driving portion 122. Fig. The driving unit 122 includes a control circuit 124. The control circuit 124 receives the flow rate difference? F between the output flow rate and the set flow rate from the above-described control circuit C2.

The driving section 122 includes a piezoelectric element 126 (piezo element). The piezoelectric element 126 is configured to move the valve body 130, which will be described later, in the opening and closing operation of the control valve VL1. The piezoelectric element 126 expands and contracts according to an applied voltage (an example of a control voltage) to open or close the control valve VL1 by approaching or separating the valve body 130 and the valve seat 128d described later. For example, the control circuit 124 controls the applied voltage Vp, which is the voltage applied to the piezoelectric element 126, so that the flow amount difference? F becomes zero. Further, the control circuit 124 is configured to input, to the control circuit C2, a signal specifying the applied voltage Vp to the piezoelectric element. That is, the control circuit C2 functions as a control section for obtaining a signal (a value of the control valve VL1) for specifying the applied voltage Vp to the piezoelectric element.

The control valve VL1 includes a main body 128, a valve body 130 (diaphragm), a diaphragm spring 132, a pressing member 134, a base member 136, a spherical body 138, (140). The main body 128 provides a flow path 128a, a flow path 128b, and a valve chamber 128c. The flow path 128a and the flow path 128b constitute a part of the second flow path L2 described above. Further, the main body 128 further provides a valve seat 128d.

The valve body 130 is urged against the valve seat 128d through the pushing member 134 by the disc spring 132. [ When the voltage applied to the piezoelectric element 126 is zero, the valve body 130 is in contact with the valve seat 128d, and the control valve VL1 is closed.

One end (lower end in the figure) of the piezoelectric element 126 is supported by the base member 136. [ The piezoelectric element 126 is connected to the support member 140. The support member 140 is coupled to the pushing member 134 at one end thereof (lower end in the drawing). When a voltage is applied to the piezoelectric element 126, the piezoelectric element 126 expands. When the piezoelectric element 126 expands, the supporting member 140 moves in a direction away from the valve seat 128d, and accordingly, the pressing member 134 also moves in a direction away from the valve seat 128d. Thereby, the valve body 130 is separated from the valve seat 128d, and the control valve VL1 is opened. The opening degree of the control valve VL1 or the distance between the valve body 130 and the valve seat 128d is controlled by the voltage applied to the piezoelectric element 126. [

Here, the control circuit C2 can determine opening / closing of the on-off valve VL2 based on the voltage applied to the piezoelectric element 126. [ 18 is a view for explaining opening / closing confirmation of the opening / closing valve. 18 (A) is a recipe of gas supply, Fig. 18 (B) is the opening / closing timing of the on / off valve VL2, Fig. 18 (C) is the detection value of the pressure detector PM, (D) is the control voltage of the piezoelectric element of the control valve VL1. In the case of the recipe shown in FIG. 18A, the "opening timing" of the opening / closing valve VL2 becomes equal to the timing of the "gas ON" of the recipe as shown in FIG. 18B. Then, as shown in Fig. 18C, the detected value of the pressure detector PM becomes a constant value regardless of opening / closing of the opening / closing valve VL2. Such a situation where the pressure is constant is realized by opening and closing the control valve VL1, that is, by the operation of the piezoelectric element 126. [ The control voltage of the piezoelectric element 126 changes from the voltage value V _P1 to the voltage value V _P2 at the time T _P1 at which the opening / closing valve VL2 is opened, and at the time T _P2 at which the opening / closing valve VL2 is closed And changes from the value V _P2 to the voltage value V _P1 . Similarly, the control voltage of the piezoelectric element 126, on-off valve (VL2), a change in voltage value V _P2 from the time T the voltage value at _P3 V _P1 that is open, and the on-off valve (VL2) at time T _P4 is being closed And changes from the voltage value V _P2 to the voltage value V _P1 . The control circuit C2 can determine opening and closing of the on-off valve VL2 by determining a change in the control voltage of the piezoelectric element 126. [ Therefore, opening and closing of the opening and closing valve VL2 can be easily determined without adding a sensor or the like.

The control circuit C2 may compare the obtained control voltage with a reference value of a predetermined control voltage, and output an alarm according to the comparison result. The predetermined reference value of the control voltage is, for example, a control voltage of the piezoelectric element 126 operated when the control voltage is created in accordance with a recipe. The reference value of the measured control voltage is stored in advance in the storage section which can be referred to by the control circuit C2. The control circuit C2 obtains a reference value by referring to the storage section and compares it with the obtained control voltage. The comparison result is, for example, a difference between the obtained control voltage and a reference value of a predetermined control voltage. The control circuit C2 outputs an alarm when, for example, the difference is equal to or greater than a predetermined threshold value. The control circuit C2 outputs an alarm signal to, for example, a display or a speaker. Thereby, an alarm can be outputted when the opening / closing valve is not performing a predetermined operation.

[Example]

Hereinafter, the present invention will be described with reference to examples and comparative examples for explaining the above effects, but the present invention is not limited to the following examples.

(Verification of the detection position of the pressure detector PM)

It was verified whether or not the detection position of the pressure detector PM for detecting the pressure in the flow path between the control valve and the orifice affects the flow rate control. First, it was confirmed whether or not the positional relationship between the pressure detector PM and the orifice affects the flow rate control. 19 is a system outline diagram when the influence of the detection position of the pressure detector PM on the flow rate control is evaluated. As shown in Fig. 19A, the evaluation system includes a flow rate reference FC2, a control valve VL7, a pressure detector PM, an orifice OL5, and an on-off valve VL8. The flow rate reference FC2 has the same configuration as the pressure type flow rate control device FC1. 19 (B), the distance from the orifice OL5 to the pressure detector PM is set as the separation distance LL1, and the separation distance LL1 is set to 0 [m] to 3 [ m], and the error between the flow rate at the outlet side of the orifice OL5 and the set value was evaluated. The results are shown in Fig.

Fig. 20 shows the evaluation results evaluated in the system configuration of Fig. The horizontal axis indicates the flow rate set value [%] and the vertical axis indicates the flow rate error [%]. The flow rate setting value is a ratio to the maximum value of the flow rate at which the orifice OL5 can flow. When the separation distance LL1 is 0 m, the separation distance LL1 is 1 m, the separation distance LL1 is 2 m, and the separation distance LL1 is 3 m. The flow error was measured, and the result was plotted. The broken line in the figure is the standard specification value of the orifice. As shown in Fig. 20, it has been confirmed that as the separation distance LL1 becomes longer, the absolute value of the flow error increases. It is considered that the accuracy is lowered by the differential pressure of the length of the pipe between the orifice OL5 and the pressure detector PM.

Next, it was confirmed whether the positional relationship between the pressure detector (PM) and the control valve affected the flow rate control. Fig. 21 is a system outline diagram when the influence of the detection position of the pressure detector PM on the flow rate is evaluated. As shown in Fig. 21A, the evaluation system includes a flow rate reference FC2, a control valve VL7, a pressure detector PM, an orifice OL5, and an on / off valve VL8. The flow rate reference FC2 has the same configuration as the pressure type flow rate control device FC1. 21 (B), the distance from the pressure detector PM to the control valve VL7 is set as the separation distance LL2, and the separation distance LL2 is set between 0 [m] and 3 [m], and the error between the flow rate at the outlet side of the orifice OL5 and the set value was evaluated. The results are shown in Fig.

Fig. 22 shows the evaluation results evaluated in the system configuration of Fig. The horizontal axis indicates the flow rate set value [%] and the vertical axis indicates the flow rate error [%]. The flow rate setting value is a ratio to the maximum value of the flow rate at which the orifice OL5 can flow. The pressure detector PM and the control valve VL7 are operated when the separation distance LL2 is 0 m and the separation distance LL2 is 1 m and the separation distance LL2 is 2 m. , And the result is plotted. The broken line in the figure is the standard specification value of the flow rate reference FC2. As shown in Fig. 22, it was confirmed that the flow error does not depend on the piping length between the pressure detector PM and the control valve VL7. From the results shown in Figs. 20 and 22, it was confirmed that the pressure detector PM can accurately control the flow rate at the side of the orifice in the flow path between the control valve and the orifice. It has been confirmed that the length of the pipe between the orifice OL5 and the pressure detector PM needs to be 1 [m] or less in order to reduce the flow error to 0.1 [%] or less.

(Verification of the detection position of the temperature detector TM)

It was verified whether or not the detection position of the temperature detector TM for detecting the temperature in the flow path between the control valve and the orifice affects the flow rate control. Fig. 23 is a system overview when the influence of the detection position of the temperature detector TM on the flow rate is evaluated. As shown in Fig. 19A, the evaluation system is disposed in a measurement room RO1 at room temperature (25 DEG C) and includes a flow rate reference device FC2, a control valve VL7, a pressure detector PM, (TM), an orifice (OL5), and an on-off valve (VL8). The flow rate reference FC2 has the same configuration as the pressure type flow rate control device FC1. The temperature detector TM is disposed on the side of the control valve VL1 and used for controlling the flow rate of the control valve VL1. The orifice OL5 and the on-off valve VL8 were placed in a thermostatic chamber RO2 capable of controlling the temperature within a range of 25 ° C to 50 ° C. The temperature in the thermostat bath RO2 was changed to evaluate the relationship between the flow rate at the outlet side of the orifice OL5 and the set value. The separation distance LL3 between the pressure detector PM and the orifice OL5 is 2 [m]. The results are shown in Fig. 24 and Fig.

Fig. 24 shows the evaluation results evaluated in the system configuration of Fig. The horizontal axis represents the flow rate set value [%], and the vertical axis represents the measured flow rate [sccm] at the outlet side of the orifice OL5. The flow rate setting value is a ratio to the maximum value of the flow rate at which the orifice OL5 can flow. The flow rate and the set value at the outlet side of the orifice OL5 were plotted for the case where the set temperature of the thermostat bath RO2 was 25 DEG C, 30 DEG C, 40 DEG C, and 50 DEG C., respectively. Fig. 25 shows the result of converting the graph of Fig. 24 based on the data at 25 DEG C in Fig. The horizontal axis represents the flow rate set value [%] and the vertical axis represents the flow rate at 25 ° C. As shown in Fig. 25, it was confirmed that the larger the difference between the temperature of the orifice OL5 and the detection temperature (25 DEG C) of the temperature detector TM, the larger the value of the flow error. Thus, it has been confirmed that it is important to accurately measure the temperature of the orifice. From the results of Figs. 24 and 25, it was confirmed that the temperature detector TM can accurately control the flow rate in the flow path between the control valve and the orifice, which is located on the orifice side.

(Verification of influence of each component of semiconductor manufacturing system on flow rate control)

The influence of the components of the semiconductor manufacturing system including the gas supply system on the flow control was evaluated. Fig. 26 is a schematic diagram showing components that evaluate the influence on the flow rate control. The flow control device is omitted. The system shown in Fig. 26 has a first gas source GS1, a second gas source GS2, and a chamber 12. The first gas source GS1 is connected to the chamber 12 through the first flow path L1. And the second gas source GS2 is connected to the second flow path L2. The second flow path L2 joins the first flow path L1 at the connection point PP1.

The evaluation method was as follows. The first gas was supplied as Ar gas to the chamber 12 continuously at 750 [sccm]. Further, the second gas was supplied as O ₂ gas to the chamber 12 intermittently at 5 [sccm]. Then, a plasma was generated in the chamber 12, and the emission intensity of the plasma was measured. The measured light emission intensity was standardized based on the maximum light emission intensity. (Evaluation at the time of rise) until the measured light emission intensity reaches 0% to 90% by supplying the gas, and the time from the stop of the gas supply until the measured light emission intensity reaches 20% from 100% Hour) was measured to confirm the response.

Evaluation was made as follows. Site A is a flow control device. The flow rate control device is an evaluation target of the embodiment having the orifice OL1 and the on / off valve VL2 and the pressure type flow rate control device FC3 of the gas supply system 1 shown in Fig. The portion B is the length (add line length) from the flow rate control device to the connection point PP1. The length of the add line is set to be shorter than that of the embodiment having the orifice OL1 and the on / off valve VL2 (the add line length is 0 [m]) and the add line length 0.15 [m], 1.00 [ Examples were evaluated. The portion C is a length (main line length) from the first gas source GS1 to the chamber 12, and 0.15 [m], 1.00 [m], and 3.00 [m] were evaluated. Region D is the upper electrode capacity, and the case of 100 [cc], 160 [cc], and 340 [cc] was evaluated. Region E is the number of gas (GAS) holes, and 53 cases and 105 cases were evaluated. The results are shown in Fig.

Fig. 27 shows the evaluation results of the respective components shown in Fig. The portions A to C surrounded by the broken lines correspond to the portions of the gas supply system according to the embodiment. As for the site A, in the evaluation at the time of rise, it was confirmed that the examples were superior in response to the comparative examples. That is, it was confirmed that the embodiment having the orifice OL1 and the on-off valve VL2 is superior in response to the pressure type flow rate control device FC3 of the gas supply system 1 shown in Fig. With respect to the site B, the best response was obtained when the add line length was 0 [m] in both the rise evaluation and the drop evaluation. That is, it was confirmed that the embodiment having the orifice OL1 and the on-off valve VL2 has excellent responsiveness. In addition, it was confirmed that the site C and the site E have small site dependency of responsiveness. It was also confirmed that the smaller the upper electrode volume, the better the response to the portion D.

Then, the degree of influence of each region was calculated. The degree of influence represents the ratio of the magnitude of the effect of each region to the magnitude of the total effect. As shown in Fig. 27, it was confirmed that the site B among the sites A to E had the greatest influence. In other words, it has been confirmed that the configuration of the embodiment having the orifice OL1 and the opening / closing valve VL2 is very effective for improving the response because the parameters of the most influential part can be controlled.

The measurement is a result of the supply of Ar gas, that is, the case where a carrier gas is present. For example, as in the case of the gas supply system 1B shown in Fig. 9, the carrier gas may not be supplied . In such a case, the dependency of the responsiveness on the main line tends to increase. Therefore, when there is a step using a carrier gas in the recipe, if the orifice OL1 and the on-off valve VL2 are disposed upstream of the inlet block 55 and there is no step using the carrier gas in the recipe, (OL1) and the on-off valve (VL2) may be disposed downstream of the inlet block (55). That is, the position of the orifice OL1 and the opening / closing valve VL2 with respect to the inlet block 55 may be determined according to the recipe.

1, 1A, 1B, 1C ... Gas supply system
10 ... Plasma processing apparatus (substrate processing apparatus)
12 ... chamber
51 ... exhaust
C1 ... controller
55 ... Inlet block
U1 ... unit
U2 ... unit
74 ... The sealing member
76 ... cylinder
78 ... A biasing member
81 ... The driving unit
126 ... Piezoelectric element
128d ... Valve seat
130 ... Valve body
C2 ... The control circuit (control section)
E, EA, EB ... Exhaust mechanism
EL ... The exhaust air-
EL1 ... Small exhaust air flow
EL2 ... A large exhaust flow path
GS1 ... The first gas source
GS2 ... The second gas source
GS3 ... The third gas source
L1 ... The first euros
L2 ... The second euros
L3 ... Third Euro
PP1, PP2, PP3, PP4, PP5 ... Connection point
FC1, FC3 ... Pressure type flow control device
OL1, OL2, OL3, OL5 ... Orifice
VL2, VL5 ... Opening / closing valve
PM ... Pressure detector
TM ... Temperature detector
L21 ... End
PP2 ... Connection point
VL1, VL41, VL7 ... Control valve
VL3, VL4 ... Exhaust valve

Claims (15)

A gas supply system for supplying gas to a chamber of a substrate processing apparatus,
A first flow path connecting the first gas source of the first gas and the chamber,
A second flow path connecting the second gas source of the second gas and the first flow path,
A control valve provided in the second flow path to control a flow rate of the second gas to a predetermined amount,
An orifice provided downstream of the control valve and provided at an end of the second flow path,
An open / close valve provided at a connection point between the first flow path and an end of the second flow path for controlling the supply timing of the second gas supplied from the outlet of the orifice to the first flow path,
An exhaust mechanism connected to a flow path between the control valve and the orifice of the second flow path to exhaust the second gas,
And a controller for operating the control valve, the on-off valve, and the exhaust mechanism. The method according to claim 1,
Wherein the opening / closing valve has a sealing member which is pressed against the orifice so as to seal the outlet of the orifice in the closing control, and is separated from the orifice in the opening control. The method of claim 2,
Wherein the opening / closing valve includes: a cylinder for fixedly supporting the sealing member; a biasing member elastically biasing the cylinder in a direction in which the sealing member is in pressure contact with the orifice; A gas supply system having a driving portion. The method according to any one of claims 1 to 3,
Wherein the orifice and the on-off valve are disposed on a downstream side of an inlet block provided in the chamber. The method according to any one of claims 1 to 3,
Wherein the orifice and the on-off valve are disposed on an upstream side of an inlet block provided in the chamber. The method according to any one of claims 1 to 5,
The exhaust mechanism includes:
A small exhaust passage connected to the second flow path and having a first displacement amount,
An exhaust gas passage connected to the second flow path and having a second exhaust amount larger than the first exhaust amount,
And a first exhaust valve provided in the large exhaust flow passage for controlling the exhaust timing. The method of claim 6,
Wherein the exhaust mechanism further comprises a second exhaust valve provided in the small-volume exhaust passage and controlling exhaust timing. The method according to any one of claims 1 to 7,
Wherein the exhaust mechanism is connected to the orifice side in a flow path between the control valve and the orifice. The method according to any one of claims 1 to 8,
Further comprising a pressure detector for detecting a pressure of the second gas in a flow path between the control valve and the orifice in the second flow path,
Wherein the pressure detector is located on the orifice side in a flow path between the control valve and the orifice,
Wherein the control valve controls the flow rate of the second gas based on the detection result of the pressure detector. The method according to any one of claims 1 to 9,
Further comprising a temperature detector for detecting the temperature of the second gas in the flow path between the control valve and the orifice in the second flow path,
Wherein the temperature detector is located on the orifice side in a flow path between the control valve and the orifice,
Wherein the control valve controls the flow rate of the second gas based on the detection result of the temperature detector. The method according to any one of claims 1 to 10,
Wherein the controller is configured to control the flow rate of the exhaust gas to be supplied to the exhaust mechanism when the second gas of the target flow rate is supplied to the first flow path at the target supply timing, Controls the control valve to flow the second gas at the target flow rate, and opens the on-off valve when the target supply timing is reached. The method according to any one of claims 1 to 11,
Further comprising a control unit for acquiring a value of the control valve,
Wherein the control valve includes a valve body, a valve seat, and a piezoelectric element that expands in accordance with a control voltage and opens and closes the control valve by approaching or separating the valve body and the valve seat,
Wherein the control unit determines opening / closing of the opening / closing valve based on a control voltage of the piezoelectric element. The method of claim 12,
Wherein the control unit compares the obtained control voltage with a predetermined reference value of the control voltage, and outputs an alarm in accordance with the comparison result. A substrate processing system comprising the gas supply system according to any one of claims 1 to 13. A first flow path connecting the first gas source of the first gas and the chamber,
A second flow path connecting the second gas source of the second gas and the first flow path,
A control valve provided in the second flow path to control a flow rate of the second gas to a predetermined amount,
An orifice provided downstream of the control valve and provided at an end of the second flow path,
An open / close valve provided at a connection point between the first flow path and an end of the second flow path for controlling the supply timing of the second gas supplied from the outlet of the orifice to the first flow path,
An exhaust mechanism connected to a flow path between the control valve and the orifice of the second flow path to exhaust the second gas,
A gas supply method for supplying a gas to a chamber of a substrate processing apparatus using a gas supply system including a controller for operating the control valve, the on-off valve, and the exhaust mechanism,
A preparation step of controlling the control valve to flow the second gas at a target flow rate in a state in which the exhaust mechanism is operated while the open / close valve is closed;
And a supply step of supplying the second gas of the target flow rate to the first flow path by opening the on-off valve when the target supply timing is reached while continuing the preparation step.

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