CN112781779A - High-electric-resistance film pressure sensor and preparation method thereof - Google Patents
High-electric-resistance film pressure sensor and preparation method thereof Download PDFInfo
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- CN112781779A CN112781779A CN202110071237.9A CN202110071237A CN112781779A CN 112781779 A CN112781779 A CN 112781779A CN 202110071237 A CN202110071237 A CN 202110071237A CN 112781779 A CN112781779 A CN 112781779A
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- stainless steel
- sensitive chip
- welding
- ring
- pressure sensor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0042—Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/0061—Electrical connection means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/148—Details about the circuit board integration, e.g. integrated with the diaphragm surface or encapsulation
Abstract
The invention relates to a high-electric-resistance thin film pressure sensor and a preparation method thereof. According to the high-electrical-resistance thin-film pressure sensor provided by the invention, a simple stainless steel metal structure of a sensitive element is optimized into a three-layer structure of a stainless steel sensitive chip, a ceramic insulating ring and a stainless steel welding ring, when a large voltage or current exists outside, the large voltage or current can be transmitted to the stainless steel welding ring through the base, and the ceramic insulating ring exists between the stainless steel welding ring and the sensitive chip, so that the large voltage or current is prevented from being transmitted to the stainless steel sensitive chip, and the electrical resistance performance of the thin-film pressure sensor is improved.
Description
Technical Field
The invention relates to the field of micro-electromechanical systems, in particular to a high-electric-resistance film pressure sensor and a preparation method thereof.
Background
With the rapid development of missile weapons, carrier rockets, satellites, space stations and high-speed rail technologies in China, the requirements of high-voltage electricity resistance are put forward for film pressure sensors in many military and civil fields. The stainless steel has impurities in the smelting process, and the impurities are the main reasons for generating defects on the surface of the stainless steel after grinding and polishing. When the outside has a large voltage (current) environment, the voltage (current) is easy to break down the insulating layer through the defects on the surface of the stainless steel substrate, so that the sensor fails. At present, the highest electrical resistance level of the film pressure sensor is about 300V/AC, and the qualification rate is not high. Therefore, a novel film pressure sensor is needed to solve the problem of poor electric resistance of the film pressure sensor.
Disclosure of Invention
In view of the above problems, the present invention has been made to provide a highly electric-resistant thin-film pressure sensor and a method for manufacturing the same that overcome the above problems or at least partially solve the above problems.
According to a first aspect of the invention, a high-impedance thin film pressure sensor is provided, which comprises a base, a support and a shell, wherein a stainless steel welding ring, a ceramic insulating ring and a stainless steel sensitive chip are sequentially arranged on the upper surface of the base, and the stainless steel welding ring, the ceramic insulating ring and the stainless steel sensitive chip are all positioned in the support.
In a possible implementation mode, a PCB signal adapter plate is arranged in the shell, a connector is arranged at the top end of the shell, the PCB signal adapter plate is connected with the stainless steel sensitive chip through a gold wire lead, and the PCB signal adapter plate is connected with the connector through an AF lead.
In one possible embodiment, the plug is fixed to the top end of the housing by a threaded connection.
In one possible embodiment, the threaded connection is a set screw.
According to a second aspect of the present invention, there is provided a method for manufacturing a high-electrical-resistance thin-film pressure sensor, comprising the steps of S1, ceramic insulating ring metallization; step S2, preparing a sensitive chip assembly, and sintering the stainless steel sensitive chip, the ceramic insulating ring and the stainless steel welding ring into a whole by using a brazing process; step S3, preparing a Wheatstone bridge; step S4, welding a base; step S5, welding a bracket; step S6, bonding a PCB signal adapter plate; step S7, welding a gold wire lead; step S8, welding an AF lead wire; step S9, welding the shell; step S10, the connector is fixed.
In a possible embodiment, the method for sintering the stainless steel sensitive chip, the ceramic insulating ring and the stainless steel welding ring into a whole by using a brazing process further comprises the following steps: and cleaning, grinding and polishing the machined stainless steel sensitive chip and the stainless steel welding ring.
In one possible embodiment, in step S2, a pressure of 10-50 MPa may be applied to the assembly during sintering.
In a possible implementation, step S3 specifically includes: cleaning the sintered sensitive chip assembly, depositing a silicon oxide insulating layer, a Karma alloy functional layer and a gold electrode layer on the upper surface of the sensitive chip assembly by using an ion beam sputtering method, performing photoetching treatment on the silicon oxide insulating layer, the Karma alloy functional layer and the gold electrode layer after deposition to form a needed Wheatstone bridge and a gold electrode, and finally, using a stripping process to deposit the silicon oxide insulating layer and expose the gold electrode.
In one possible embodiment, the thickness of the silicon oxide insulating layer is in a range of 2 to 5 μm, the thickness of the camauite functional layer is in a range of 100 to 200nm, and the thickness of the gold electrode layer is in a range of 200 to 400 nm.
In a possible implementation manner, the step S4 specifically includes: and welding the sensitive chip assembly on the base by using a laser welding machine or electron beam welding.
According to the high-electrical-resistance thin-film pressure sensor provided by the invention, a simple stainless steel metal structure of a sensitive element is optimized into a three-layer structure of a stainless steel sensitive chip, a ceramic insulating ring and a stainless steel welding ring, when a large voltage or current exists outside, the large voltage or current can be transmitted to the stainless steel welding ring through the base, and the ceramic insulating ring exists between the stainless steel welding ring and the sensitive chip, so that the large voltage or current is prevented from being transmitted to the stainless steel sensitive chip, and the electrical resistance performance of the thin-film pressure sensor is improved.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a high-impedance thin-film pressure sensor according to an embodiment of the present invention;
description of reference numerals:
11-base, 12-stainless steel welding ring, 13-ceramic insulating ring, 14-stainless steel sensitive chip, 15-support, 16-shell, 17-screw thread connecting piece, 18-plug piece, 19-AF conductor, 110-PCB signal adapter plate and 111-gold wire lead.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
The terms "comprises" and "comprising," and any variations thereof, in the present description and claims and drawings are intended to cover a non-exclusive inclusion, such as a list of steps or elements.
The technical solution of the present invention is further described in detail with reference to the accompanying drawings and embodiments.
Referring to fig. 1, an embodiment of the present invention provides a high-impedance thin-film pressure sensor, including: base 11, support 15 and shell 16, the upper surface of base 11 has set gradually stainless steel weld ring 12, ceramic insulating ring 13 and the sensitive chip of stainless steel 14, stainless steel weld ring 12 ceramic insulating ring 13 with the sensitive chip of stainless steel 14 all is located in the support 15.
In one example, a PCB signal adapting board 110 is arranged in the housing 16, a connector 18 is arranged at the top end of the housing 16, the PCB signal adapting board 110 is connected with the stainless steel sensitive chip 14 through a gold wire lead 111, and the PCB signal adapting board 110 is connected with the connector 18 through an AF wire 19.
In one example, the plug 18 is secured to the top end of the housing 16 by a threaded connection 17. Illustratively, the threaded connection 17 is a set screw.
During operation, the pressure sensor is fixed on a measured object through the base 11, pressure on the measured object is transmitted to the stainless steel sensitive chip 14 through the central hole in the base 11, the stainless steel sensitive chip 14 is deformed by the pressure, a Wheatstone bridge which is prepared on the stainless steel sensitive chip 14 through an MEMS (micro-electromechanical systems) process is specifically arranged on the stainless steel sensitive chip, the bridge converts chip deformation caused by the pressure into an electric signal, and the electric signal is transmitted to a rear-end signal receiving device through the gold wire lead 111, the PCB signal adapter plate 110, the AF lead 19 and the connector assembly 18, so that the measurement of the pressure is completed.
When the traditional film pressure sensor is used in a complex environment and has large voltage or current outside, the voltage or the current can be directly transmitted to the stainless steel sensitive chip through the base, and due to the defects of the stainless steel material, the voltage or the current can easily break down an insulating layer on the sensitive chip, so that the sensor fails. According to the high-electrical-resistance thin-film pressure sensor provided by the invention, a simple stainless steel metal structure of a sensitive element is optimized into a three-layer structure of a stainless steel sensitive chip, a ceramic insulating ring and a stainless steel welding ring, when a large voltage or current exists outside, the voltage or the current can be transmitted to the stainless steel welding ring through the base, and the ceramic insulating ring exists between the stainless steel welding ring and the sensitive chip, so that the transmission of the large voltage or the current to the stainless steel sensitive chip is avoided, and the electrical resistance performance of the thin-film pressure sensor is improved.
A preparation method of a high-electric-resistance thin-film pressure sensor comprises the following steps:
and step S1, performing ceramic insulation ring metallization. Selecting an aluminum oxide ceramic insulating ring, carrying out acid cleaning treatment on the ceramic, cleaning the surface of the ceramic, depositing a 500nm nickel film on the upper surface and the lower surface of the ceramic insulating ring by using an ion beam sputtering method, intentionally using photoresist to protect the inner wall and the outer wall of the ceramic insulating ring in the deposition process, preventing the inner wall and the outer wall of the ceramic insulating ring from being deposited with metal to influence the insulating property of the ceramic insulating ring, and depositing 10 mu m of metal nickel on the upper side and the lower side of the ceramic insulating ring by using an electroplating process after the deposition is.
Step S2, a sensitive chip assembly is prepared. And cleaning the machined stainless steel sensitive chip and the stainless steel welding ring, and grinding and polishing the upper surface and the lower surface of the machined stainless steel sensitive chip and the stainless steel welding ring respectively after cleaning. The method comprises the steps of sintering a stainless steel sensitive chip, a ceramic insulating ring and a stainless steel welding ring into a whole in a vacuum furnace by using a brazing process, wherein the used brazing filler metal is silver-copper brazing filler metal, the sintering temperature is 800-1000 ℃, the time is 2-4 hours, in order to ensure that the brazing filler metal is fully infiltrated in the sintering process, in order to ensure that the sensitive chip assembly is good in sealing property, the assembly can be subjected to pressure of 10-50 MPa in the sintering process.
In step S3, a wheatstone bridge is prepared. Cleaning the sintered sensitive chip assembly, depositing a silicon oxide insulating layer, a Karma alloy functional layer and a gold electrode layer on the upper surface of the sensitive chip assembly by using an ion beam sputtering method, performing photoetching treatment on the silicon oxide insulating layer, the Karma alloy functional layer and the gold electrode layer after deposition to form a needed Wheatstone bridge and a gold electrode, and finally depositing the silicon oxide insulating layer (1-2 mu m) by using a stripping process and exposing the gold electrode. Illustratively, the thickness of the silicon oxide insulating layer ranges from 2 to 5 μm, the thickness of the carmax functional layer ranges from 100 to 200nm, and the thickness of the gold electrode layer ranges from 200 to 400 nm.
Step S4, the base is welded. And welding the sensitive chip assembly on the base by using a laser welding machine or electron beam welding.
And step S5, welding the bracket. The bracket is welded on the base by using a laser welder or electron beam welding.
And step S6, bonding the PCB signal adapter plate. And bonding the PCB signal adapter plate on the bracket by using epoxy glue, and curing.
And step S7, welding a gold wire lead. And respectively welding two ends of the gold wire to the stainless steel sensitive chip and the PCB signal adapter plate by using an ultrasonic pressure welding process so as to transmit the electric signal from the stainless steel sensitive chip to the PCB signal adapter plate.
Step S8, welding an AF wire. And welding two ends of the AF lead to the PCB signal adapter plate and the connector respectively by using a manual soldering process so as to transmit the electric signal from the PCB signal adapter plate to the connector.
And step S9, welding the shell. The housing is welded to the bracket using a laser welder or electron beam welding.
Step S10, the connector is fixed. The connector is fixed on the shell by using a fixing screw, and after the screw is locked, screw glue is coated on the screw.
And step S11, storing. And storing the packaged film pressure sensor in a drying cabinet or a nitrogen cabinet for later use.
According to the high-voltage-resistance thin film pressure sensor and the preparation method thereof, the method of introducing the ceramic insulating ring on the sensitive chip is adopted, so that the voltage resistance level of the thin film pressure sensor can be improved to more than 500V/AC, and the qualified rate of the voltage resistance of the sensor is greatly improved.
The above embodiments are provided to further explain the objects, technical solutions and advantages of the present invention in detail, it should be understood that the above embodiments are merely exemplary embodiments of the present invention and are not intended to limit the scope of the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. The utility model provides a high anti electric film pressure sensor, its characterized in that includes base (11), support (15) and shell (16), the upper surface of base (11) has set gradually stainless steel weld ring (12), ceramic insulator ring (13) and stainless steel sensitive chip (14), stainless steel weld ring (12) ceramic insulator ring (13) and stainless steel sensitive chip (14) all are located in support (15).
2. The high-impedance thin-film pressure sensor according to claim 1, wherein a PCB signal adapter board (110) is arranged in the housing (16), a connector (18) is arranged at the top end of the housing (16), the PCB signal adapter board (110) is connected with the stainless steel sensitive chip (14) through a gold wire lead (111), and the PCB signal adapter board (110) is connected with the connector (18) through an AF (auto-ranging) wire (19).
3. The high-impedance thin-film pressure sensor according to claim 2, wherein the plug-in connector (18) is fixed to the top end of the housing (16) by a threaded connector (17).
4. The high electrical resistance thin film pressure sensor of claim 3, wherein the threaded connector (17) is a set screw.
5. A preparation method of a high-electric-resistance thin-film pressure sensor is characterized by comprising the following steps:
step S1, ceramic insulation ring metallization;
step S2, preparing a sensitive chip assembly, and sintering the stainless steel sensitive chip, the ceramic insulating ring and the stainless steel welding ring into a whole by using a brazing process;
step S3, preparing a Wheatstone bridge;
step S4, welding a base;
step S5, welding a bracket;
step S6, bonding a PCB signal adapter plate;
step S7, welding a gold wire lead;
step S8, welding an AF lead wire;
step S9, welding the shell;
step S10, the connector is fixed.
6. The method of claim 5, wherein the step of sintering the stainless steel sensor chip, the ceramic insulating ring and the stainless steel solder ring into a whole by using a brazing process further comprises:
and cleaning, grinding and polishing the machined stainless steel sensitive chip and the stainless steel welding ring.
7. The method of claim 5, wherein in step S2, a pressure of 10 to 50MPa is applied to the assembly during sintering.
8. The method according to claim 5, wherein step S3 specifically includes:
cleaning the sintered sensitive chip assembly, depositing a silicon oxide insulating layer, a Karma alloy functional layer and a gold electrode layer on the upper surface of the sensitive chip assembly by using an ion beam sputtering method, performing photoetching treatment on the silicon oxide insulating layer, the Karma alloy functional layer and the gold electrode layer after deposition to form a needed Wheatstone bridge and a gold electrode, and finally, using a stripping process to deposit the silicon oxide insulating layer and expose the gold electrode.
9. The method according to claim 8, wherein the silicon oxide insulating layer has a thickness of 2 to 5 μm, the dammar functional layer has a thickness of 100 to 200nm, and the gold electrode layer has a thickness of 200 to 400 nm.
10. The preparation method according to claim 5, wherein the step S4 specifically comprises:
and welding the sensitive chip assembly on the base by using a laser welding machine or electron beam welding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110071237.9A CN112781779A (en) | 2021-01-19 | 2021-01-19 | High-electric-resistance film pressure sensor and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110071237.9A CN112781779A (en) | 2021-01-19 | 2021-01-19 | High-electric-resistance film pressure sensor and preparation method thereof |
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| CN112781779A true CN112781779A (en) | 2021-05-11 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113432764A (en) * | 2021-06-23 | 2021-09-24 | 广州市智芯禾科技有限责任公司 | Three-redundancy film pressure sensor |
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2021
- 2021-01-19 CN CN202110071237.9A patent/CN112781779A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113432764A (en) * | 2021-06-23 | 2021-09-24 | 广州市智芯禾科技有限责任公司 | Three-redundancy film pressure sensor |
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