CN112781752A - Temperature detection circuit and chip - Google Patents
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- CN112781752A CN112781752A CN202011610927.9A CN202011610927A CN112781752A CN 112781752 A CN112781752 A CN 112781752A CN 202011610927 A CN202011610927 A CN 202011610927A CN 112781752 A CN112781752 A CN 112781752A
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Abstract
The application provides a temperature detection circuit and chip, this temperature detection circuit includes: a power supply module for outputting a-segment first current I1B segment second current I2And c segment third current I3，aI2‑bI1‑cI3Is equal to 0, and I1、I2、I3A is an integer greater than 1, and b and c are positive integers; a temperature detection unit with a detection end connected with the power supply module for detecting the temperature based on the first current I1Generating a first voltage V related to temperature at the detection end1Based on the second current I2Generating a second voltage V related to temperature at the detection end2And based on the third current I3Generating a third voltage V related to temperature at the detection end3(ii) a A voltage difference value amplifying module connected with the detection end for outputting an amplified difference voltage of a preset difference voltage V (aV)2‑bV1‑cV3(ii) a And the analog-to-digital conversion module is used for converting the amplified difference voltage V into a corresponding temperature value.
Description
Technical Field
The application relates to the technical field of temperature detection, in particular to a temperature detection circuit and a chip.
Background
In recent years, the rapid development of integrated circuits, the continuous progress of the process manufacturing level, the number of components on the unit chip area, the increasing of the heat productivity of the chip, and the potential hazard of device performance degradation and even failure are increased, thereby bringing about the attention of people to the monitoring and management of the chip temperature. The traditional temperature sensor has larger error when detecting the temperature, so that the accuracy of the detection result is lower.
In view of the above problems, no effective technical solution exists at present.
Disclosure of Invention
An object of the embodiments of the present application is to provide a temperature detection circuit and a chip, so as to eliminate an error caused by a parasitic resistance of a wire, and improve accuracy of temperature detection.
In a first aspect, an embodiment of the present application provides a temperature detection circuit, including:
a power supply module for outputting a-segment first current I1B segment second current I2And c segment third current I3Wherein, aI2-bI1-cI3＝0，I1、I2、I3A is an integer greater than 1, and b and c are positive integers;
a temperature detection unit with a detection end connected with the power supply module and used for detecting the temperature based on the first current I1Generating a first voltage V related to temperature at the detection end1Based on the second current I2Generating a second voltage V related to temperature at the detection end2And based on the third current I3Generating a third voltage V related to temperature at the detection end3；
A voltage difference value amplification module connected with the detection end for outputting a first preset difference voltage V11The first preset difference voltage V11＝aV2-bV1-cV3；
And the analog-to-digital conversion module is used for converting the amplified difference voltage V into a corresponding temperature value.
Optionally, in the temperature detection circuit according to this embodiment of the present application, the voltage difference amplification module includes an input capacitor, a feedback capacitor, a first switch, a second switch, a third switch, and an operational amplifier;
one end of the input capacitor is connected with the detection end, the other end of the input capacitor is connected with the input end of a second switch, and the output end of the second switch is connected with the inverting input end of the operational amplifier; the positive phase input end of the operational amplifier is connected with a preset reference voltage, and the output end of the operational amplifier is connected with the analog-to-digital conversion module; one end of the feedback capacitor is connected with the inverting input end, and the other end of the feedback capacitor is connected with the output end of the operational amplifier; two ends of the third switch are respectively connected with two ends of the feedback capacitor; the input end of the first switch is connected with a preset reference voltage, and the output end of the first switch is connected with the input capacitor and a common node of the second switch.
Optionally, in the temperature detection circuit according to the embodiment of the present application, the temperature sensing module includes a temperature-sensitive sensing element, one end of the temperature-sensitive sensing element is connected to the voltage providing unit, and the other end of the temperature-sensitive sensing element is grounded.
Optionally, in the temperature detection circuit according to the embodiment of the present application, the temperature sensing module includes a plurality of temperature sensitive sensing elements and a plurality of seventh switches;
each temperature-sensitive sensing element is connected with the power supply module and the common node of the input capacitor through a seventh switch;
the control signal is used for controlling the seventh switch corresponding to one temperature-sensitive sensing element to be switched on, and the seventh switches corresponding to other temperature-sensitive sensing elements to be switched off.
Optionally, in the temperature detection circuit according to the embodiment of the present application, the temperature-sensitive sensing element includes a diode, an anode of the diode is connected to the power supply module, and a cathode of the diode is grounded.
Optionally, in the temperature detection circuit according to the embodiment of the present application, the temperature-sensitive sensing element includes an N-type transistor, a collector and a base of the N-type transistor are connected to the power supply module, and an emitter of the N-type transistor is grounded.
Optionally, in the temperature detection circuit according to this embodiment of the present application, the temperature-sensitive sensing element includes a P-type transistor, an emitter of the P-type transistor is connected to the power supply, and a collector of the P-type transistor is connected to the base and grounded.
Optionally, in the temperature detection circuit according to the embodiment of the present application, the power supply module includes:
a first constant current source for outputting a first current;
a second constant current source for outputting a second current;
a third constant current source for outputting a third current;
the input end of the fourth switch is connected with the first constant current source, and the output end of the fourth switch is connected with the detection end;
the input end of the fifth switch is connected with the second constant current source, and the output end of the fifth switch is connected with the detection end;
and the input end of the sixth switch is connected with the third constant current source, and the output end of the sixth switch is connected with the detection end.
Optionally, values of a, b, and c in the temperature detection circuit described in the embodiment of the present application satisfy the following relationship: a is b + c.
Optionally, in the temperature detection circuit according to this embodiment of the present application, where a is 2, in one temperature detection period:
between t0 and t1, the power supply module outputs a first current I1The second switch and the third switch are both open;
between t1 and-t 2, the power supply module outputs a second current I2；
Between t2 and t3, the second switch is turned off first, then the first switch is turned on, and the power supply module outputs a third current I3；
Between t3 and t4, the first switch is turned off and then the second switch is turned on, and the power supply module outputs a second current I2；
Wherein T0, T1, T2 and T3 are sequentially spaced by the same period of time T.
Optionally, the temperature detection circuit according to the embodiment of the present application further includes a digital processing module, where the digital processing module is connected to an output end of the analog-to-digital conversion module; one temperature detection period of the temperature detection circuit comprises an upper half period and a lower half period;
the power supply module is used for outputting a section a first current I in the last half period1B segment second current I2And c segment third current I3(ii) a And outputting a1 segment first current I in the next half period1B1 segment second current I2And c1 segment third current I3；
The voltage difference value amplification module is used for outputting a first preset difference value voltage V in the last half period11The first amplified difference voltage of, the first preset difference voltage V11＝aV2-bV1-cV3(ii) a And for outputting a second predetermined difference voltage V in the next half-cycle22A second amplified difference voltage of said second preset difference voltage V22＝a1V2-b1V1-c1V3(ii) a The first amplified difference voltage is not equal to the second amplified difference voltage; wherein, a1I2-b1I1-c1I30, a1 is an integer greater than 1, b1 and c1 are both positive integers, V22＝a1V2-b1V1-c1V3；
The analog-to-digital conversion module is used for converting the first amplified difference voltage into a first temperature value; and for converting the second amplified difference voltage to a second temperature value;
and the digital processing module is used for carrying out difference on the first temperature value and the second temperature value to obtain a target temperature value.
Optionally, in the temperature detection circuit described in the embodiment of the present application, a1 ═ a, b1 ═ b, and c1 ═ c;
outputting each segment of first current I in the upper half period and the lower half period1A second current I2And a third current I3In a different order.
Optionally, in the temperature detection circuit according to the embodiment of the present application, a — 2;
in the upper half period, between t0 and t1, the power supply module outputs a first current I1The second switch andthe third switches are all opened;
between t1 and t2, the power supply module outputs a second current I2；
Between t2 and t3, the second switch is turned off first, then the first switch is turned on, and the power supply module outputs a third current I3；
The first switch is firstly switched off and then the second switch is switched on between t3 and t4, and the power supply module outputs a second current I between t3 and t42；
In the next half period, between t7 and t8, the power supply module outputs a second current I2The second switch and the third switch are both open;
between t8 and t9, the third switch is turned off first, and then the power supply module outputs the first current I1；
Between t9 and t10, the second switch is turned off first, and then the power supply module outputs the second current I2；
Between t10 and t11, the first switch is turned off and then the second switch is turned on, and the power supply module outputs a third current I3；
Wherein T0, T1, T2, T3 and T4 are sequentially spaced by the same time period T, and T7, T8, T9, T10 and T11 are sequentially spaced by the same time period T.
Optionally, in the temperature detection circuit according to the embodiment of the present application, the temperature detection circuit is reset between t4 and t 7.
Optionally, in the temperature detection circuit according to the embodiment of the present application, at least one of the following relations holds: a ≠ a1, b ≠ b1, and c ≠ c 1.
In a second aspect, an embodiment of the present application further provides a chip, including any one of the temperature detection circuits described above.
In the embodiment of the application, the preset difference value V of the first voltage, the second voltage and the third voltage is adopted11Amplified difference voltage V of0Wherein V is11＝aV2-bV1-cV3And aI2-bI1-cI30 or soEliminating the amplified difference voltage V0A component related to the equivalent resistance of the conductor, to obtain an amplified differential voltage V unrelated to the equivalent resistance of the conductor0Therefore, the temperature value obtained by the conversion of the analog-to-digital conversion module is irrelevant to the equivalent resistance of the lead, the interference of the parasitic resistance of the lead on the temperature detection result is eliminated, and the detection accuracy can be improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present application and therefore should not be considered as limiting the scope, and that those skilled in the art can also obtain other related drawings based on the drawings without inventive efforts.
FIG. 1 is a first block diagram of a temperature sensing circuit in some embodiments of the present application.
Fig. 2 is a schematic circuit diagram of a specific circuit structure of the temperature detection circuit in the embodiment shown in fig. 1.
Fig. 3 is a circuit block diagram of a power supply module of a temperature detection circuit in some embodiments of the present application.
FIG. 4 is a timing diagram of the temperature detection circuit in the embodiment of FIG. 2.
FIG. 5 is another timing diagram of the temperature detection circuit in the embodiment of FIG. 2 of the present application.
Fig. 6 is a schematic diagram of another specific circuit structure of a temperature detection circuit in the embodiment shown in fig. 1 of the present application.
FIG. 7 is a second block diagram of a temperature sensing circuit in some embodiments of the present application.
Fig. 8 is a schematic circuit diagram of a specific circuit structure of the temperature detection circuit in the embodiment shown in fig. 7.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application.
In the description of the present application, it should be noted that the terms "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings or orientations or positional relationships that the products of the application usually place when using, and are only used for convenience in describing the present application and simplifying the description, but do not indicate or imply that the devices or elements that are referred to must have a specific orientation, be constructed in a specific orientation, and operate, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like are used merely to distinguish one description from another, and are not to be construed as indicating or implying relative importance.
It should also be noted that, unless expressly stated or limited otherwise, the terms "disposed" and "connected" are to be construed broadly, e.g., as meaning fixedly connected, detachably connected, or integrally connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
Referring to fig. 1, fig. 1 is a block diagram of a temperature detection circuit according to some embodiments of the present disclosure. The temperature detection circuit includes: the device comprises a power supply module 101, a temperature sensing module 102, a voltage difference value amplifying module 103 and an analog-to-digital conversion module 104. The power supply module 101 is connected to the detection end of the temperature sensing module 102, the voltage difference amplification module 103 is connected to the common node of the power supply module 101 and the temperature sensing module 102, and the analog-to-digital conversion module 104 is connected to the voltage difference amplification unit 103.
The power supply module 101 is configured to output a b-segment first current, a-segment second current, and a c-segment third current, where a is b + c, a is a positive integer greater than or equal to 2, and b and c are positive integers. The first current has a current value of I1The current value of the second current is I2The current value of the third current is I3. Wherein the temperature sensing module 102 is used for generating a temperature-dependent sense under the driving of the current output by the power supply module 101In response to voltage, either positive or negative correlation may be used. Wherein, the temperature sensing module 102 senses the first current I1Generating a first voltage V1Sensing the second current I2Generating a second voltage V2Sensing the third current I3Generating a third voltage V3. The voltage difference amplifying module 103 is configured to output a first preset difference voltage V of a first voltage, a second voltage and a third voltage11Amplified difference voltage V of0Wherein V is11＝aV2-bV1-cV3And aI2-bI1-cI30. And, I2Is not equal to I1And I3. The analog-to-digital conversion module 104 is used for amplifying the difference voltage V0Converted to a corresponding temperature value.
In the embodiment of the application, the preset difference value V of the first voltage, the second voltage and the third voltage is adopted11Amplified difference voltage V of0Wherein V is aV2-bV1-cV3And aI2-bI1-cI30 to eliminate the amplified difference voltage V0A component related to the equivalent resistance of the conductor, to obtain an amplified differential voltage V unrelated to the equivalent resistance of the conductor0Therefore, the temperature value obtained by the conversion of the analog-to-digital conversion module is irrelevant to the equivalent resistance of the lead, the interference of the parasitic resistance of the lead on the temperature detection result is eliminated, and the accuracy of temperature detection can be improved.
Specifically, referring to fig. 1 and fig. 2, fig. 2 is a schematic diagram of a specific circuit structure of a temperature detection circuit in some embodiments of the present application. The power supply module 101 may include a first constant current source a1, a second constant current source a2, a third constant current source A3, a fourth switch S4, a fifth switch S5, and a sixth switch S6. Wherein, the first constant current source A1 is used for outputting a first current I1(ii) a The second constant current source A2 is used for outputting a second current I2(ii) a The third constant current source A3 is used for outputting a third current I3。
Wherein, the input end of the fourth switch S4 is connected with the first constant current source a1, and the output end is connected with the detection end; the input terminal of the fifth switch S5 is connected to the second constant current source a2, and the output terminal thereof is connected to the detection terminal. The input terminal of the sixth switch S6 is connected to the third constant current source A3, and the output terminal thereof is connected to the detection terminal. The fifth switch and the sixth switch are both PMOS transistors, and certainly, may also be NMOS transistors. The gates of the fourth switch S4, the fifth switch S5, and the sixth switch S6 are respectively connected to control signals, so as to control the switching of the fourth switch S4, the fifth switch S5, and the sixth switch S6.
Of course, it is understood that, as shown in fig. 3, the power supply module 101 may also have other structures, for example, it may include a first current mirror F1, a second current mirror F2, a third current mirror F3, a fourth switch S4, a fifth switch S5 and a sixth switch S6. Wherein the first current mirror F1 is used for outputting a first current I1(ii) a The second current mirror F2 is used for outputting a second current I2(ii) a The third current mirror A3 is used for outputting a third current I3. The input end of the fourth switch S4 is connected to the first current mirror F1, and the output end is connected to the detection end. The input end of the fifth switch S5 is connected with the second current mirror F2, and the output end is connected with the detection end. The input end of the sixth switch S6 is connected with the third current mirror F3, and the output end is connected with the detection end. The fifth switch S5 and the sixth switch S6 are both PMOS transistors, but may be NMOS transistors. The gates of the fourth switch S4, the fifth switch S5, and the sixth switch S6 are respectively connected to control signals, so as to control the switching of the fourth switch S4, the fifth switch S5, and the sixth switch S6.
Referring to fig. 2, the temperature sensing module 102 includes a temperature sensitive sensing element T1. One end of the temperature-sensitive sensing element T1 is connected with the power supply module 101, and the other end of the temperature-sensitive sensing element T1 is grounded. One end of the temperature-sensitive sensing element T1 connected with the power supply module 101 is a detection end. In the embodiment shown in fig. 2, the temperature-sensitive sensing element T1 is a P-type transistor, an emitter of the P-type transistor is connected to the power supply module 101, and a collector of the P-type transistor is connected to a base and grounded. Of course, it is understood that the temperature-sensitive sensing element T1 may also be an N-type transistor, the collector and the base of which are connected to the power supply module 101, and the emitter of which is grounded.
In other embodiments, the temperature-sensitive inductive element T1 may also be a diode, an anode of the diode is connected to the power supply module 101, and a cathode of the diode is grounded. If the temperature-sensitive element is a P-type transistor, the detection end is an emitter of the P-type transistor, and if the temperature-sensitive element is a temperature-sensitive diode, the anode of the diode is the detection end.
The voltage difference amplifying module 103 includes an input capacitor C1, a feedback capacitor C2, a first switch S1, a second switch S2, a third switch S3, and an operational amplifier U1. One end of the input capacitor C1 is connected to the detection end of the temperature sensing module 102, that is, connected to the detection end of the temperature sensitive sensing element, and the other end is connected to the inverting input terminal of the operational amplifier U1 through the second switch S2. Two ends of the third switch S3 are connected to two ends of the feedback capacitor C2, respectively. One end of the feedback capacitor C2 is connected with the inverting input end of the operational amplifier U1, and the other end is connected with the output end of the operational amplifier U1. The non-inverting input terminal of the operational amplifier U1 is connected to a preset reference voltage Vcm, and the output terminal of the operational amplifier U1 is connected to the input terminal of the analog-to-digital conversion module 104. One end of the first switch S1 is connected to the common node of the second switch S2 and the input capacitor, and the other end is connected to the predetermined reference voltage Vcm. The first switch S1, the second switch S2, and the third switch S3 may be PMOS transistors or NMOS transistors. The control terminals of the first switch S1, the second switch S2, and the third switch S3 respectively receive corresponding control signals to control the switches to be turned on or off when necessary.
The analog-to-digital conversion module 104 is a common analog-to-digital converter in the prior art, and need not be described in detail.
Referring to fig. 4, fig. 4 is a signal timing diagram of the temperature detection circuit in the embodiment of the present application. The operation of the temperature detection circuit will be described in detail with reference to fig. 4. Wherein V11 is 2V2-V1-V3Correspondingly, 2I2-2I1-I3That is, a is 2, b is 1, and c is 1. Wherein,when the temperature detection circuit detects temperature:
before the temperature detection starts, that is, before the time t0, all the switches in the temperature detection circuit are in the off state.
The temperature detection starts at time T0, and the power supply module 101 outputs the first current I between time T0 and time T1 (the time length between T0 and T1 is T)1That is, the fourth switch S4 of the power supply module 101 is turned on, and the fifth switch S5 and the sixth switch S6 are turned off. Meanwhile, the second switch S2 and the third switch S3 are both open. The input current of the detection end of the temperature sensing module is I1Correspondingly, the voltage at the detection end is V1. The voltage at the inverting input of the operational amplifier U1 is Vcm. Wherein, V1＝kTln(I1/Is)/q+I1R, wherein T is the first current I1Is the saturation current of the temperature sensitive element, k Is the boltzmann constant, q Is the charge constant, and R Is the equivalent resistance value of the wire between the temperature sensing module and the input capacitor C1.
Between time t1 and time t2, the third switch S3 is turned off, the fourth switch S4 is turned off, and the fifth switch S5 is turned on. The power supply module 101 outputs a second current I2Correspondingly, the voltage at the second terminal is V2。V2＝kTln(I2/Is)/q+I2R, the voltage at the output end of the operational amplifier U1 is V0＝Vcm-[kTln(I2/I1)/q+(I2-I1)R]*x2/x1. The voltage of the inverting input terminal is V2-V1That is to say the V0＝Vcm-[kTln(I2/I1)/q+(I2-I1)R]*x2/x1For the first predetermined difference voltage V2-V1Amplified voltage of x1Is the capacitance value, x, of the input resistor C12The capacitance value of the feedback capacitor C2.
Between time t2 and time t3, the second switch S2 is turned off, then the fourth switch S4 is turned off, and the fifth switch S5 and the fourth switch S4 are turned offA switch S1 is turned on. The power supply module 101 outputs a third current I3The voltage of the input capacitor C1 at the end connected to the temperature sensitive element T1 is V2Becomes V3And the voltage at the output terminal of the operational amplification unit U1 is kept at V0＝Vcm-[kTln(I2/I1)/q+(I2-I1)R]*x2/x1。
Between time t3 and time t4, the first switch S1 is turned off, and then the second switch S2 and the fifth switch S5 are turned on. Between the time t3 and the time t4, the power supply module 101 outputs a second current I2The voltage of the input capacitor C1 at the end connected to the temperature sensitive element T1 is V3Becomes V2The voltage at the inverting input terminal of the operational amplification unit U1 is V2-V3The voltage at the output terminal of the operational amplifier unit U1 becomes 2V after being stabilized2-V1-V3Amplified difference voltage V of0I.e. is V0＝Vcm-[kTln(I2I2/I1I3)/q+(2I2-I1-I3)R]*x2/x1。
The amplified difference voltage V0Obtaining a temperature value D1 ═ D [ Vcm-kTln (I) through analog-to-digital conversion of the analog-to-digital conversion module2I2/I1I3)/q*x2/x1]。
In the above steps, the time intervals between T0 and T1, between T1 and T2, and between T3 and T4 are all T.
It is to be understood that in other embodiments, V11＝3V2-2V1-V3Of course, it may be V11＝3V2-V1-2V3. Below with V11＝3V2-2V1-V3The temperature detection process, correspondingly, 3I, is explained in detail2-2I1-I30. That is, a is 3, b is 2, and c is 1. As shown in FIG. 5, is V11＝3V2-2V1-V3Timing diagrams of time. Wherein, the temperature detection circuit is used for detecting the temperature:
before the temperature detection starts, that is, before the time t0, all the switches in the temperature detection circuit are in the off state.
The temperature detection is started at the time T0, and the power supply module 101 outputs the first current I between the time T0 and the time T1 (the time length between the time T0 and the time T1 is T)1That is, the fourth switch S4 of the power supply module 101 is turned on, and the fifth switch S5 and the sixth switch S6 are turned off. Meanwhile, the second switch S2 and the third switch S3 are both open. The input current of the detection terminal is I1Correspondingly, the voltage at the detection end is V1. The voltage at the inverting input of the operational amplifier is Vcm. Wherein, V1＝kTln(I1/Is)/q+I1R, wherein T is the first current I1Is the saturation current of the temperature sensitive element, k Is the boltzmann constant, q Is the charge constant, and R Is the equivalent resistance value of the wire between the temperature sensing module and the input capacitor C1.
Between time t1 and time t2, the third switch S3 is turned off, the fourth switch S4 is turned off, and the fifth switch S5 is turned on. The power supply module 101 outputs a second current I2Correspondingly, the voltage of the second end of the temperature sensing module is V2。V2＝kTln(I2/Is)/q+I2R, the voltage at the output end of the operational amplifier U1 is V0＝Vcm-[kTln(I2/I1)/q+(I2-I1)R]*x2/x1. The voltage of the inverting input terminal is V2-V1That is to say the V0＝Vcm-[kTln(I2/I1)/q+(I2-I1)R]*x2/x1Is the difference voltage V2-V1Amplified voltage of x1Is the capacitance value, x, of the input capacitance C12The capacitance value of the feedback capacitor C2.
Between time t2 and time t3, the second switch S2 is turned off, the fourth switch S4 is turned off, and the fifth switch S5 and the first switch S1 are turned on. The power supply module 101 outputs a third current I3The product isThe voltage of the end of the input capacitor C1 connected with the temperature-sensitive element T1 is V2Becomes V3And the voltage at the output terminal of the operational amplification unit U1 is kept at V0＝Vcm-[kTln(I2/I1)/q+(I2-I1)R]*x2/x1。
Between time t3 and time t4, the first switch S1 is turned off, and then the second switch S2 and the fifth switch S5 are turned on. Between the time t3 and the time t4, the power supply module 101 outputs a second current I2The voltage of the input capacitor C1 at the end connected to the temperature sensitive element T1 is V3Becomes V2The voltage at the inverting input terminal of the operational amplification unit U1 is V2-V3The voltage at the output terminal of the operational amplifier unit U1 becomes 2V after being stabilized2-V1-V3Is amplified by a voltage V0I.e. amplifying the difference voltage V0＝Vcm-[kTln(I2I2/I1I3)/q+(2I2-I1-I3)R]*x2/x1。
Between the time t4 and the time t5, the second switch S2 is turned off, the fourth switch S4 is turned off, the first switch S1 and the sixth switch S6 are turned on, and the current output by the power supply module is the third current I3The voltage of the input capacitor C1 at the end connected to the temperature sensitive element T1 is V2Becomes V3The voltage at the output of the operational amplifier is kept at V0＝Vcm-[kTln(I2I2/I1I3)/q+(2I2-I1-I3)R]*x2/x1。
Between the time t5 and the time t6, after the first switch S1 is turned off, the fifth switch S5 and the second switch S2 are turned on, and the current output by the power supply module is the second current I2The voltage of the input capacitor C1 at the end connected to the temperature sensitive element T1 is V3Becomes V2The voltage at the output of the operational amplifier becomes: v0＝Vcm-[kTln(I2I2I2/I1I1I3)/q+(3I2-2I1-I3)R]*x2/x1. Due to, 3I2-2I1-I30, so that the difference amplifies the voltage V0＝Vcm-[kTln(I2I2I2/I1I1I3)/q]*x2/x1。
The analog-to-digital conversion module amplifies the difference value by a voltage V0＝Vcm-[kTln(I2I2I2/I1I1I3)/q]*x2/x1Performing analog-to-digital conversion to obtain D1 ═ D [ Vcm- [ kTln (I)2I2I2/I1I1I3)/q]*x2/x1]。
Of course, it will be understood that in the relationship V11 ═ aV2-bV1-cV3In this case, the values of a, b, and c may be other values as long as a is satisfied.
Referring to fig. 6, fig. 6 is a schematic structural diagram of a temperature detection circuit in other embodiments of the present application. The embodiment shown in fig. 6 is different from the temperature detecting circuit in the above embodiments in that the temperature sensing module 102 includes a plurality of temperature sensitive sensing elements T1, a plurality of seventh switches S7, and a plurality of eighth switches S8.
The number of the temperature-sensitive sensing elements T1 is equal to that of the seventh switches S7, and the number of the temperature-sensitive sensing elements T1 is equal to that of the eighth switches S8. In this embodiment, the number of the temperature-sensitive sensing elements T1 is 2, and the number of the seventh switch S7 and the eighth switch S8 is also 2. Each temperature-sensitive sensing element T1 is connected to the power supply module 101 through a seventh switch S7, and connected to the voltage difference amplifying module 103 through an eighth switch S8; the control ends of each seventh switch S7 and each eighth switch S8 are connected to the control signals; the control signal is used for controlling the seventh switch S7 and the eighth switch S8 corresponding to one temperature-sensitive sensing element T1 to be turned on, and the seventh switch S7 and the eighth switch S8 corresponding to the other temperature-sensitive sensing elements T1 to be turned off, so as to detect the temperature of the positions of the temperature-sensitive sensing elements T1 corresponding to the turned-on seventh switch S7 and the turned-on eighth switch S8. In fig. 6, the temperature sensing module 102 includes 2 detecting terminals, and an input terminal of each temperature-sensitive sensing element T1 is used as a detecting terminal, and of course, in the actual detecting process, only the detecting terminal of one temperature-sensitive sensing element T1 is connected to the power supply module 101 and the voltage difference amplifying module 103 respectively through the seventh switch S7 and the eighth switch S8.
In the embodiment shown in fig. 5, the temperature-sensitive sensing element T1 is a P-type transistor, an emitter of the P-type transistor is connected to the power supply module, and a collector of the P-type transistor is connected to a base and grounded.
Of course, it is understood that the temperature-sensitive sensing element T1 may also be an N-type transistor, the collector and the base of which are connected to the power supply module 101, and the emitter of which is grounded. In other embodiments, the temperature-sensitive inductive element T1 may also be a diode, an anode of the diode is connected to the power supply module 101, and a cathode of the diode is grounded.
It is understood that, in some embodiments, the temperature detection circuit may further include a control unit, which is respectively connected to control terminals of the reset switch S0, the first switch S1, the second switch S2, the third switch S3, the fourth switch S4, the fifth switch S5 and the sixth switch S6, so as to control on and off of the bit switch S0, the first switch S1, the second switch S2, the third switch S3, the fourth switch S4, the fifth switch S5 and the sixth switch S6. For example, if the temperature detection circuit is located in a chip, the control unit may be a processor of the chip.
The detection process of the temperature detection circuit in the embodiment shown in fig. 6 is substantially the same as that of the temperature detection circuit in the above-described embodiment, except that the corresponding temperature sensitive sensing element needs to be selected as an element for sensing temperature by controlling the on and off of the plurality of seventh switches S7 and the eighth switch S8 before detection.
Referring to fig. 7, fig. 7 is a block diagram of a temperature detection circuit according to some embodiments of the present disclosure. The temperature detection circuit includes: the device comprises a power supply module 101, a temperature sensing module 102, a voltage difference value amplifying module 103, an analog-to-digital conversion module 104 and a digital processing module 105. The power supply module 101 is connected to the detection end of the temperature sensing module 102, the voltage difference amplifying module 103 is connected to the common node of the power supply module 101 and the temperature sensing module 102, and the analog-to-digital conversion module 104 is connected to the voltage difference amplifying unit 203. The output of the analog-to-digital conversion module 104 is connected to the digital processing module 105.
Wherein, the power supply module 101 is used for the first current I in the a section of a temperature detection period1B segment second current I2And c segment third current I3(ii) a And outputting a1 segment first current I in the next half period1B1 segment second current I2And c1 segment third current I3. The voltage difference amplifying module 103 is used for outputting a first preset difference voltage V in the last half period11The first amplified difference voltage of, the first preset difference voltage V11＝aV2-bV1-cV3(ii) a And for outputting a second predetermined difference voltage V in the next half-cycle22The first preset difference voltage V is a second amplified difference voltage of22＝a1V2-b1V1-c1V3(ii) a The first amplified difference voltage is not equal to the second amplified difference voltage; wherein, a1I2-b1I1-c1I30, a1 is an integer greater than 1, b1 and c1 are both positive integers, V22＝a1V2-b1V1-c1V3。
Wherein, the temperature sensing module 102 senses the first current I1Generating a first voltage V1Sensing the second current I2Generating a second voltage V2Sensing the third current I3Generating a third voltage V3. The voltage difference amplifying unit 203 is used for outputting a first preset difference voltage V of the first voltage, the second voltage and the third voltage in the upper half period11First amplified difference voltage V01And outputting a second preset difference voltage V of the first voltage, the second voltage and the third voltage in the next half period22Second amplified difference voltage V02. For the analog-to-digital conversion module 104At a first amplified difference voltage V01And a second amplified difference voltage V02Respectively converted into a corresponding first temperature value and a corresponding second temperature value, and the digital processing module 105 is configured to perform a difference between the first temperature value and the second temperature value, so as to obtain a temperature value at the temperature sensing module 102.
It will be appreciated that in order to achieve that the first amplified difference voltage is not equal to the second amplified difference voltage, thereby avoiding that the first temperature value and the first current I of the second temperature value are completely cancelled when the difference is made1A second current I2And a third current I3The parameters of (1); the following may be used:
for example, a1 ═ a, b1 ═ b, c1 ═ c; outputting each section of first current I by the upper half period and the lower half period1A second current I2And a third current I3In a different order. Of course, at least one of a1 and a, b1 and b, c and c1 may have different values, that is, at least one of the following relations holds: in this case, the order of outputting the first current, the second current, and the third current may be the same or different, a ≠ a1, b ≠ b1, and c ≠ c 1.
For example, in some embodiments, referring to fig. 8, the power supply module 101 may include a first constant current source a1, a second constant current source a2, a third constant current source A3, a fourth switch S4, a fifth switch S5, and a sixth switch S6. Wherein, the first constant current source A1 is used for outputting a first current I1(ii) a The second constant current source A2 is used for outputting a second current I2(ii) a The third constant current source A3 is used for outputting a third current I3。
Wherein, the input end of the fourth switch S4 is connected with the first constant current source a1, and the output end is connected with the detection end; the input terminal of the fifth switch S5 is connected to the second constant current source a2, and the output terminal thereof is connected to the detection terminal. The input terminal of the sixth switch S6 is connected to the third constant current source A3, and the output terminal thereof is connected to the detection terminal. The fourth switch S4, the fifth switch and the sixth switch are all PMOS transistors, but may also be NMOS transistors. The gates of the fourth switch S4, the fifth switch S5, and the sixth switch S6 are respectively connected to control signals, so as to control the switching of the fourth switch S4, the fifth switch S5, and the sixth switch S6.
Of course, it is understood that the power supply module 101 may also take other forms of structures.
The temperature sensing module 102 includes a temperature sensitive sensing element T1. One end of the temperature-sensitive sensing element T1 is connected with the power supply module 101, and the other end of the temperature-sensitive sensing element T1 is grounded. One end of the temperature-sensitive sensing element T1 connected with the power supply module 101 is a detection end. In the embodiment shown in fig. 7, the temperature-sensitive sensing element T1 is a P-type transistor, an emitter of the P-type transistor is connected to the power supply module 101, and a collector of the P-type transistor is connected to a base and grounded. Of course, it is understood that the temperature-sensitive sensing element T1 may also be an N-type transistor, the collector and the base of which are connected to the power supply module 101, and the emitter of which is grounded.
Of course, the temperature-sensitive sensing element T1 may also be a diode, the anode of the diode is connected to the power supply module 101, and the cathode of the diode is grounded. If the temperature-sensitive element is a P-type transistor, the detection end is an emitter of the P-type transistor, and if the temperature-sensitive element is a temperature-sensitive diode, the anode of the diode is the detection end.
The voltage difference amplifying module 103 includes an input capacitor C1, a feedback capacitor C2, a first switch S1, a second switch S2, a third switch S3, and an operational amplifier U1. One end of the input capacitor C1 is connected to the detection end of the temperature sensing module 102, that is, connected to the detection end of the temperature sensitive sensing element, and the other end is connected to the inverting input terminal of the operational amplifier U1 through the second switch S2. Two ends of the third switch S3 are connected to two ends of the feedback capacitor C2, respectively. One end of the feedback capacitor C2 is connected with the inverting input end of the operational amplifier U1, and the other end is connected with the output end of the operational amplifier U1. The non-inverting input terminal of the operational amplifier U1 is connected to a preset reference voltage Vcm, and the output terminal of the operational amplifier U1 is connected to the input terminal of the analog-to-digital conversion module 104. One end of the first switch S1 is connected to the common node of the second switch S2 and the input capacitor, and the other end is connected to the predetermined reference voltage Vcm. The first switch S1, the second switch S2, and the third switch S3 may be PMOS transistors or NMOS transistors. The control terminals of the first switch S1, the second switch S2, and the third switch S3 respectively receive corresponding control signals to control the switches to be turned on or off as required.
The analog-to-digital conversion module 104 is a common analog-to-digital converter in the prior art, and need not be described in detail. The digital processing module 105 may be implemented using logic circuits.
Referring to fig. 8, fig. 4 is a signal timing diagram of the temperature detection circuit in the embodiment of the present application. The operation of the temperature detection circuit will be described in detail with reference to fig. 4. Wherein one detection period includes an upper half period and a lower half period. Wherein a and a1 are both equal to 2, b1, c1 are both equal to 1, but the power supply module 101 outputs the first current I in the upper half period and the lower half period1A second current I2And a third current I3In a different order.
When the temperature detection circuit detects the temperature, in the last half period:
before the temperature detection starts, that is, before the time t0, all the switches in the temperature detection circuit are in the off state.
The temperature detection circuit starts temperature detection at time T0, and the power supply module 101 outputs a first current I between time T0 and time T1 (the time length between T0 and T1 is T)1That is, the fourth switch S4 of the power supply module 101 is turned on, and the fifth switch S5 and the sixth switch S6 are turned off. Meanwhile, the second switch S2 and the third switch S3 are both open. The input current of the detection terminal is I1Correspondingly, the voltage of the detection end of the temperature sensing module is V1. The voltage at the inverting input of the operational amplifier U1 is Vcm. Wherein, V1＝kTln(I1/Is)/q+I1R, wherein T is the first current I1Is the saturation current of the temperature sensing module, k Is the boltzmann constant,q is the charge constant and R is the equivalent resistance of the wire between the temperature sensing module and the input capacitor C1.
Between time t1 and time t2, the third switch S3 is turned off, the fourth switch S4 is turned off, and the fifth switch S5 is turned on. The power supply module 101 outputs a second current I2Correspondingly, the voltage at the detection end of the temperature sensing module is V2。V2＝kTln(I2/Is)/q+I2R, the voltage at the output end of the operational amplifier U1 is V0＝Vcm-[kTln(I2/I1)/q+(I2-I1)R]*x2/x1. The voltage of the inverting input terminal is V2-V1That is to say the V0＝Vcm-[kTln(I2/I1)/q+(I2-I1)R]*x2/x1Is the difference voltage V2-V1The difference of (a) amplifies the voltage, x1Is the capacitance value, x, of the input resistor C12The capacitance value of the feedback capacitor C2.
Between time t2 and time t3, the second switch S2 is turned off, the fourth switch S4 is turned off, and the fifth switch S5 and the first switch S1 are turned on. The power supply module 101 outputs a third current I3The voltage of the input capacitor C1 at the end connected to the temperature sensitive element T1 is V2Becomes V3And the voltage at the output terminal of the operational amplification unit U1 is kept at V0＝Vcm-[kTln(I2/I1)/q+(I2-I1)R]*x2/x1。
Between time t3 and time t4, the first switch S1 is turned off, and then the second switch S2 and the fifth switch S5 are turned on. Between the time t3 and the time t4, the power supply module 101 outputs a second current I2The voltage of the input capacitor C1 at the end connected to the temperature sensitive element T1 is V3Becomes V2The voltage at the inverting input terminal of the operational amplification unit U1 is V2-V3The voltage at the output terminal of the operational amplifier unit U1 becomes 2V after being stabilized2-V1-V3Is amplified by a first difference value of voltage V01I.e. the first difference amplified voltage V01＝Vcm-[kTln(I2I2/I1I3)/q+(2I2-I1-I3)R]*x2/x1。
The V is01Obtaining a temperature value D1 ═ D [ Vcm-kTln (I) through analog-to-digital conversion of the analog-to-digital conversion module2I2/I1I3)/q*x2/x1]。
In the next half period, after the detection of the last half period is finished, the temperature detection circuit is reset, after the reset is finished, the next half period is entered, the temperature detection circuit is reset between the time t5 and the time t6, and all switches are turned off after the reset is finished.
All switches in the temperature sensing circuit are in the off state prior to the beginning of the temperature sensing, i.e., prior to time t7, for the next half cycle.
The temperature detection starts at time T7, and the power supply module 101 outputs the second current I between time T7 and time T8 (the time length between T7 and T8 is T)2That is, the fifth switch S5 of the power supply module 101 is opened, and the fourth switch S4 and the sixth switch S6 are closed. Meanwhile, the second switch S2 and the third switch S3 are both open. The power supply module 101 outputs a second current I2Correspondingly, the voltage of the detection terminal is V2. The voltage at the inverting input of the operational amplifier U1 is Vcm. Wherein, V2＝kTln(I2/Is)/q+I2R, wherein T is the second current I2Is the saturation current of the temperature sensing module, k Is the boltzmann constant, q Is the charge constant, and R Is the equivalent resistance of the wire between the temperature sensing module and the input capacitor C1.
Between time t8 and time t9, the third switch S3 is turned off, the fifth switch S5 is turned off, and the fourth switch S4 is turned on. The power supply module 101 outputs a first current I1Correspondingly, the voltage at the second terminal is V1。V1＝kTln(I1/Is)/q+I1R, the voltage at the output end of the operational amplifier U1 is V0＝Vcm+[kTln(I2/I1)/q+(I2-I1)R]*x2/x1. The voltage of the inverting input terminal is V1-V2That is to say the V0＝Vcm+[kTln(I2/I1)/q+(I2-I1)R]*x2/x1Is the difference voltage V1-V2Is amplified by a first difference of (a) the voltage, x1Is the capacitance value, x, of the input resistor C12The capacitance value of the feedback capacitor C2.
Between time t9 and time t10, the second switch S2 is turned off, the fourth switch S4 is turned off, and the fifth switch S5 and the first switch S1 are turned on. The power supply module 101 outputs a second current I2The voltage of the input capacitor C1 at the end connected to the temperature sensitive element T1 is V1Becomes V2And the voltage at the output terminal of the operational amplification unit U1 is kept at V0＝Vcm+[kTln(I2/I1)/q+(I2-I1)R]*x2/x1。
Between time t10 and time t11, the first switch S1 is turned off, and then the second switch S2 and the fifth switch S6 are turned on. Between the time t10 and the time t11, the power supply module 101 outputs a third current I3The voltage of the input capacitor C1 at the end connected to the temperature sensitive element T1 is V2Becomes V3The voltage at the inverting input terminal of the operational amplification unit U1 is V3-V2The voltage at the output terminal of the operational amplifier U1 becomes-2V after being stabilized2+V1+V3Is amplified by a voltage V02I.e. the second difference amplified voltage V02＝Vcm+[kTln(I2I2/I1I3)/q+(2I2-I1-I3)R]*x2/x1。
The second difference amplifying voltage V02After analog-to-digital conversion by the analog-to-digital conversion module 104, a temperature value D2 ═ D [ Vcm + [ kTln (I) is obtained2I2/I1I3)/q+(2I2-I1-I3)R]*x2/x1]。
The pair of digital processing modules D2 andd1 was subjected to subtraction to obtain: Dout-D2-D1-D2 kTln (I)2I2/I1I3)/q*x2/x1]. The target temperature value and the temperature value at the temperature sensing module are in a linear relation, are not related to parasitic resistance of a lead and are also not related to maladjustment errors of a system, and therefore the detection accuracy is improved.
Of course, it is understood that the values of a and a1 may be changed, and the values of b and b1, and c1 may be adjusted accordingly.
The above description is only an example of the present application and is not intended to limit the scope of the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (16)
1. A temperature sensing circuit, comprising:
a power supply module for outputting a-segment first current I1B segment second current I2And c segment third current I3Wherein, aI2-bI1-cI3＝0，I1、I2、I3A is an integer greater than 1, and b and c are positive integers;
a temperature detection unit, the detection end of which is connected with the power supply module and is used for detecting the first current I1Generating a first voltage V related to temperature at the detection end1Based on the second current I2Generating a second voltage V related to temperature at the detection end2And based on said third current I3Generating a third voltage V related to temperature at the detection end3；
A voltage difference value amplification module connected with the detection end and used for outputting a first preset difference value voltage V11The first preset difference voltage V11＝aV2-bV1-cV3；
And the analog-to-digital conversion module is connected with the voltage difference value amplification module and is used for converting the amplified difference value voltage into a corresponding temperature numerical value.
2. The temperature detection circuit of claim 1, wherein the voltage difference amplification module comprises an input capacitor, a feedback capacitor, a first switch, a second switch, a third switch, and an operational amplifier;
one end of the input capacitor is connected with the detection end, the other end of the input capacitor is connected with the input end of a second switch, and the output end of the second switch is connected with the inverting input end of the operational amplifier; the positive phase input end of the operational amplifier is connected with a preset reference voltage, and the output end of the operational amplifier is connected with the analog-to-digital conversion module; one end of the feedback capacitor is connected with the inverting input end, and the other end of the feedback capacitor is connected with the output end of the operational amplifier; two ends of the third switch are respectively connected with two ends of the feedback capacitor; the input end of the first switch is connected with a preset reference voltage, and the output end of the first switch is connected with the input capacitor and a common node of the second switch.
3. The temperature detecting circuit according to claim 1, wherein the temperature sensing module comprises a temperature-sensitive sensing element, one end of the temperature-sensitive sensing element is connected to the voltage providing unit, and the other end of the temperature-sensitive sensing element is grounded.
4. The temperature detection circuit according to claim 1, wherein the temperature sensing module comprises a plurality of temperature sensitive sensing elements and a plurality of seventh switches;
each temperature-sensitive sensing element is connected with the power supply module and the common node of the input capacitor through a seventh switch;
the control signal is used for controlling the seventh switch corresponding to one temperature-sensitive sensing element to be switched on, and the seventh switches corresponding to other temperature-sensitive sensing elements to be switched off.
5. The temperature detection circuit according to claim 3 or 4, wherein the temperature sensitive sensing element comprises a diode, an anode of the diode is connected with the power supply module, and a cathode of the diode is grounded.
6. The temperature detection circuit according to claim 3 or 4, wherein the temperature sensitive sensing element comprises an N-type transistor, a collector and a base of the N-type transistor are connected with the power supply module, and an emitter of the N-type transistor is grounded.
7. The temperature detecting circuit according to claim 3 or 4, wherein the temperature sensitive sensing element comprises a P-type transistor, an emitter of the P-type transistor is connected to the power supply, and a collector of the P-type transistor is connected to a base and grounded.
8. The temperature sensing circuit of claim 1, wherein the power supply module comprises:
a first constant current source for outputting a first current;
a second constant current source for outputting a second current;
a third constant current source for outputting a third current;
the input end of the fourth switch is connected with the first constant current source, and the output end of the fourth switch is connected with the detection end;
the input end of the fifth switch is connected with the second constant current source, and the output end of the fifth switch is connected with the detection end;
and the input end of the sixth switch is connected with the third constant current source, and the output end of the sixth switch is connected with the detection end.
9. The temperature detection circuit of claim 2, wherein the values of a, b, and c satisfy the following relationship: a is b + c.
10. The temperature sensing circuit of claim 9, wherein a-2, during a temperature sensing period:
between t0 and t1, the power supply module outputs a first current I1The second switch and the third switch are both open;
between t1 and-t 2, the power supply module outputs a second current I2；
Between t2 and t3, the second switch is turned off first, then the first switch is turned on, and the power supply module outputs a third current I3；
Between t3 and t4, the first switch is turned off and then the second switch is turned on, and the power supply module outputs a second current I2；
Wherein T0, T1, T2 and T3 are sequentially spaced by the same period of time T.
11. The temperature detection circuit of claim 9, further comprising a digital processing module, the digital processing module being connected to an output of the analog-to-digital conversion module; one temperature detection period of the temperature detection circuit comprises an upper half period and a lower half period;
the power supply module is used for outputting a section a first current I in the last half period1B segment second current I2And c segment third current I3(ii) a And outputting a1 segment first current I in the next half period1B1 segment second current I2And c1 segment third current I3；
The voltage difference value amplification module is used for outputting a first preset difference value voltage V in the last half period11Of the first amplified difference voltage, wherein V11＝aV2-bV1-cV3(ii) a And for outputting a second predetermined difference voltage V in the next half-cycle22A second amplified difference voltage of, wherein V22＝a1V2-b1V1-c1V3(ii) a The first amplified difference voltage is not equal to the second amplified difference voltage; wherein, a1I2-b1I1-c1I30, a1 is an integer greater than 1, b1 and c1 are both positive integers, V22＝a1V2-b1V1-c1V3；
The analog-to-digital conversion module is used for converting the first amplified difference voltage into a first temperature value; and for converting the second amplified difference voltage to a second temperature value;
and the digital processing module is used for carrying out difference on the first temperature value and the second temperature value to obtain a target temperature value.
12. The temperature sensing circuit of claim 11, wherein a1, b1, c1, c;
outputting each segment of first current I in the upper half period and the lower half period1A second current I2And a third current I3In a different order.
13. The temperature sensing circuit of claim 12, wherein a-2;
in the upper half period, between t0 and t1, the power supply module outputs a first current I1The second switch and the third switch are both open;
between t1 and t2, the power supply module outputs a second current I2；
Between t2 and t3, the second switch is turned off first, then the first switch is turned on, and the power supply module outputs a third current I3；
The first switch is firstly switched off and then the second switch is switched on between t3 and t4, and the power supply module outputs a second current I between t3 and t42；
In the next half period, between t7 and t8, the power supply module outputs a second current I2The second switch and the third switch are both open;
between t8 and t9, the third switch is turned off first, and then the power supply module outputs the first current I1；
Between t9 and t10, the second switch is turned off first, and then the power supply module outputs the second current I2；
Between t10 and t11The first switch is turned off first, then the second switch is turned on, and the power supply module outputs a third current I3。
14. The temperature sensing circuit of claim 13, wherein the temperature sensing circuit is reset between t4 and t 7.
15. The temperature sensing circuit of claim 11, wherein at least one of the following relationships holds: a ≠ a1, b ≠ b1, and c ≠ c 1.
16. A chip comprising the temperature detection circuit of any one of claims 1-15.
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| CN113885610A (en) * | 2021-12-06 | 2022-01-04 | 南京芯圣电子科技有限公司 | Temperature control system, method, device, equipment and readable storage medium |
| CN114356020A (en) * | 2022-01-10 | 2022-04-15 | 中国科学院半导体研究所 | Circuit for eliminating parasitic resistance of far-end temperature sensor and control method thereof |
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| TW200624786A (en) * | 2004-08-23 | 2006-07-16 | Standard Microsyst Smc | Integrated resistance cancellation in temperature measurement systems |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113885610A (en) * | 2021-12-06 | 2022-01-04 | 南京芯圣电子科技有限公司 | Temperature control system, method, device, equipment and readable storage medium |
| CN114356020A (en) * | 2022-01-10 | 2022-04-15 | 中国科学院半导体研究所 | Circuit for eliminating parasitic resistance of far-end temperature sensor and control method thereof |
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Application publication date: 20210511 |