CN112779501A - 一种金锡合金热沉薄膜及其制备方法、热沉基板和led器件 - Google Patents
一种金锡合金热沉薄膜及其制备方法、热沉基板和led器件 Download PDFInfo
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- 229910001128 Sn alloy Inorganic materials 0.000 title claims abstract description 60
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 239000000758 substrate Substances 0.000 title claims abstract description 52
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000011248 coating agent Substances 0.000 claims abstract description 33
- 238000000576 coating method Methods 0.000 claims abstract description 33
- 239000010931 gold Substances 0.000 claims abstract description 30
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052737 gold Inorganic materials 0.000 claims abstract description 29
- 239000000919 ceramic Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 23
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 229910052718 tin Inorganic materials 0.000 claims abstract description 22
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 20
- 150000003624 transition metals Chemical class 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 230000005496 eutectics Effects 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- 238000005240 physical vapour deposition Methods 0.000 claims abstract description 7
- 238000001704 evaporation Methods 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 11
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- 238000005566 electron beam evaporation Methods 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 8
- 238000005265 energy consumption Methods 0.000 abstract description 5
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 230000003647 oxidation Effects 0.000 abstract description 2
- 238000007254 oxidation reaction Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 54
- 239000011135 tin Substances 0.000 description 22
- 238000004544 sputter deposition Methods 0.000 description 21
- 238000001771 vacuum deposition Methods 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 238000002791 soaking Methods 0.000 description 4
- AKAXWKKNSMKFNL-UHFFFAOYSA-N [Sn].[Au].[Au] Chemical compound [Sn].[Au].[Au] AKAXWKKNSMKFNL-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 241001050985 Disco Species 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 239000010970 precious metal Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000000861 blow drying Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
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Abstract
本发明涉及半导体技术领域，尤其涉及一种金锡合金热沉薄膜及其制备方法、热沉基板和LED器件。本发明公开了一种金锡合金热沉薄膜的制备方法，包括以下步骤：采用物理气相沉积法将金层和锡层依次交错镀膜于陶瓷基板上的过渡金属层上后，通过共晶热处理制得金锡合金热沉薄膜。该制备方法生产成本低，材料利用率高，工序简单，工艺可控，重复性好，制备的金锡合金薄膜纯度高，可靠性高，生产过程无污染，能耗低，且抗氧化性能好，抗热疲劳和蠕变性能优良，解决了现有的金锡合金薄膜制备工序较多，纯度低，制作成本高，能耗高，容易产生污染的技术问题。
Description
技术领域
本发明涉及半导体技术领域，尤其涉及一种金锡合金热沉薄膜及其制备方法、热沉基板和LED器件。
背景技术
随着当今LED技术的发展，LED功率越来越大，集成度越来越高，尺寸越来越小，单位体积内的发热量越来越高，热量的聚集会引起LED芯片温度的急剧上升，导致半导体材料和荧光粉的发光效率下降甚至烧毁LED芯片，如何提高散热成为大功率LED照明技术的瓶颈。
LED器件通常将LED芯片焊接固定在热沉基板上，实现散热，常见的钎焊材料有金锡合金、锡银铜等。金锡合金具备良好的导热性、稳定的化学性能、耐热冲击疲劳、耐腐蚀等性能，成为焊接的优选材料。
现有的金锡合金薄膜常用电镀和丝网印刷方法制备而成，但电镀和丝网印刷方式制作的薄膜制备的金锡合金薄膜，工序较多，制作成本高，制备得到的金锡合金薄膜纯度低，需要通过烧结和清洗才能获得所需的金锡合金薄膜，且能耗高，容易产生污染。
发明内容
本发明提供了一种金锡合金热沉薄膜及其制备方法、热沉基板和LED器件，解决了现有的金锡合金薄膜制备工序较多，纯度低，制作成本高，能耗高，容易产生污染的技术问题。
其具体技术方案如下：
本发明提供了一种金锡合金热沉薄膜的制备方法，包括以下步骤：
采用物理气相沉积法将金层和锡层依次交错镀膜于陶瓷基板上的过渡金属层上后，通过共晶热处理制得金锡合金热沉薄膜。
优选地，所述镀膜为磁控溅射镀膜、电子束蒸发镀膜和/或电阻蒸发镀膜。
优选地，所述共晶热处理的温度为260℃-320℃，时间为3min。
优选地，所述金锡合金热沉薄膜的总厚度为0.3μm～2μm。
优选地，所述金锡合金热沉薄膜的总层数为奇数；
所述金锡合金热沉薄膜的最上层和最下层为金层。
本发明还提供了上述制备方法制得的金锡合金热沉薄膜。
本发明还提供了一种热沉基板，包括：从下至上依次设置的陶瓷基板、过渡金属层和上述金锡合金热沉薄膜。
优选地，所述过渡金属层厚度为10mm～100nm。
优选地，所述过渡金属层通过物理气相沉积的方法镀膜于所述陶瓷基板的表面。
本发明还提供了一种LED器件，包括上述热沉基板和焊接在所述热沉基板表面的LED芯片。
从以上技术方案可以看出，本发明具有以下优点：
1、本发明采用真空镀膜方法制备的焊接金锡合金热沉薄膜的热沉具有生产成本低，材料利用率高，工序简单，工艺可控，重复性好，制备的金锡合金薄膜纯度高，可靠性高，整个制备过程中不使用有机溶剂和金属氰盐物质，生产过程无污染，能耗低。
2、本发明提供的金锡合金热沉薄膜经过测试300℃空气老化试验后，热导率为63W/m·K，拉伸强度为3.6Mpa，说明本发明焊接金锡合金热沉薄膜的热沉抗氧化性能好，抗热疲劳和蠕变性能优良。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其它的附图。
图1为本发明实施例提供的的LED芯片、过渡金属层和金锡合金热沉薄膜的结合示意图；
图2为本发明实施例提供的LED器件的主视图；
图3为本发明实施例提供的热沉基板的主视图；
图4为本发明实施例提供的陶瓷基板的镂空夹具的结构示意图；
图5为本发明实施例提供的陶瓷基板完成镀膜后的俯视图；
其中，附图说明如下：
1、陶瓷基板；2、过渡金属层；3、金层；4、锡层；5、LED芯片。
具体实施方式
为使得本发明的发明目的、特征、优点能够更加的明显和易懂，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，下面所描述的实施例仅仅是本发明一部分实施例，而非全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
请参阅图1，本发明实施例提供的的LED芯片、过渡金属层和金锡合金热沉薄膜的结合示意图。
请参阅图2，本发明实施例提供的LED器件的主视图。
请参阅图3，本发明实施例提供的热沉基板的主视图。
请参阅图4，本发明实施例提供的陶瓷基板的镂空夹具的结构示意图，其中，白色部分为镂空部分。
请参阅图5，本发明实施例提供的陶瓷基板完成镀膜后的俯视图，其中，阴影为镀膜部分。
本发明实施例提供了一种金锡合金热沉薄膜的制备方法，包括以下步骤：
采用物理气相沉积法将金层3和锡层4依次交错镀膜于陶瓷基板1上的过渡金属层2上后，通过共晶热处理制得金锡合金热沉薄膜。
本发明实施例中，所述镀膜为磁控溅射镀膜、电子束蒸发镀膜和/或电阻蒸发镀膜。通过真空镀膜方式制备的金锡合金热沉薄膜，可以精确控制薄膜的厚度，达到10nm的公差，重复性大大提升。而且通过在真空镀膜设备中的贵金属回收，可以提高金的利用率，降低成本，原料贵金属最终去向为金锡合金薄膜和真空镀膜设备内壁，通过对真空镀膜设备内壁金的回收，再利用，提高材料的利用率。
所述镀膜为磁控溅镀膜时，其工艺参数具体为：真空度1.0×10-4Pa；溅射气体：氩气；溅射气压0.5Pa，溅射方式：直流溅射；陶瓷基片温度200℃；溅射功率1000w；镀膜偏压3kV。
所述镀膜为电子束蒸发镀膜与电阻蒸发复合镀膜，其工艺参数具体为：真空度1.0×10-4Pa，轰击电流50-200mA，基底温度180度，基片转速15r/min，电子束电压8kV，蒸发Au电流200mA-300mA，蒸发Sn电流200mA-300mA。
本发明实施例中，所述金锡合金热沉薄膜中金和锡的纯度均为99.99％。
本发明实施例使用了高纯度的金和锡生产工艺过程中没有引入其他杂质、溶液等，整个工艺流程在真空镀膜设备内完成真空镀膜设备的参数例如真空度、溅射电压、镀膜温度严格可控。
本发明实施例中，所述金锡合金热沉薄膜的总厚度为0.3μm～2μm，优为1.88μm，其中，一层所述金层3和一层所述锡层4的总厚度为0.1μm～1μm。。
本发明实施例中，金锡合金热沉薄膜中金和锡的质量比为8:2或7:3，本发明实施例可以根据不同的金锡合金质量分数，通过控制高纯度的金和锡的厚度，制备不同质量分数的金锡合金薄膜，无需像厚膜工艺及电镀工艺单独制备不同金锡合金材料，降低不同材料的制作费用。
本发明实施例中，所述金锡合金热沉薄膜的总层数为奇数；
所述金锡合金热沉薄膜的最上层和最下层为金层3。
优选地，所述金锡合金薄膜的总层数为5层或7层，其中，总层数为7层时，所述金层3为4层，所述锡层4为3层；总层数为5层时，金层3为3层，锡层4为2层。
本发明实施例中，所述共晶热处理的温度为300℃，时间为3min。
本发明实施例还提供了上述制备方法制得的金锡合金热沉薄膜。
本发明实施例还提供了一种热沉基板，包括：从下至上依次设置的陶瓷基板1、过渡金属层2和上述金锡合金热沉薄膜。
本发明实施例中，所述陶瓷基板1为氮化铝陶瓷基板或氧化铝陶瓷基板。
本发明实施例中，所述陶瓷基板1的厚度为0.15mm～0.5mm。
本发明实施例中，所述过渡层的厚度为10mm～100nm，优选为50～100nm。
本发明实施例中，所述过渡金属层2通过物理气相沉积的方法镀膜于所述陶瓷基板1的表面；
所述过渡金属层2为镍、铬、钛或镍铬合金。
本发明实施例中，所述过渡金属层2的制备具体为：将陶瓷基板1通过镂空的工装夹具安装在镀膜设备内，采用磁控溅射镀膜设备时，其工艺参数具体为：真空度1.0×10- 4Pa；溅射气体：氩气；溅射气压0.5Pa，溅射方式：直流溅射；陶瓷基片温度200℃；溅射功率1000w；镀膜偏压3kV；
采用电子束蒸发与电阻蒸发复合镀膜系统时，其工艺参数具体为：真空度1.0×10-4Pa；轰击电流50-200mA，基底温度50-250度，基片转速15-20r/min，电子束电压6kV-8kV，蒸发铬电流200mA-300mA。
本发明实施例中，所述过渡金属层2厚度为10mm～100nm。
本发明实施例还提供了一种LED器件，包括上述热沉基板和焊接在所述热沉基板表面的LED芯片5。
实施例一
本实施例为热沉基板的制备
1、清洗：
先将60mm*70mm*0.3mm氮化铝基片放入丙酮中浸润5分钟；将基片放入无水乙醇中浸润5分钟，将清洗物用水冲洗干净后在纯水中超声清洗5分钟；加热烘干。
2、过渡金属层的制备：
将氮化铝基片通过镂空的工装夹具安装在镀膜设备内，所使用的设备是电子束蒸发与电阻蒸发复合镀膜系统。使用99.99％纯度的金属铬镀膜过渡层，厚度为100nm。真空度1.0×10-4Pa；轰击电流100mA，基底温度200℃，基片转速18r/min，电子束电压6kV，蒸发铬电流250mA。
3、金锡合金热沉薄膜的制备：
使用99.99％纯度的金和锡的蒸发镀膜材料，进行金锡合金层的镀膜。为制备金锡合金，首先进行金层和锡层厚度进行计算，为制备金70％锡30％合金，根据公式d×s×ρ＝m。
可以计算得d金:d锡＝0.88:1，即金锡的厚度比为0.88比1。制作1.88μm厚的金锡合金，按照3层金锡金结构，金锡金厚度分别为0.44μm，1μm，0.44μm。镀膜参数：真空度1.0×10-4Pa，轰击电流150mA，基底温度180度，基片转速15r/min，电子束电压8kV，蒸发Aμ电流250mA，蒸发Sn电流250mA。
4、共晶热处理：
共晶热处理的温度采用的是300℃，升温速率为10℃/min，温度升高至300℃后保持温度时间为3min，随后降温至室温，降温速率为10℃/min。
5、切割：
使用DISCO切割机，刀片型号0.1mm，刀片转速20000rpm，切割水流0.9mL/s，晶片厚度0.19mm，胶片厚度0.06mm，进刀速度3mm/s，刀片高度0.1mm。
本实施例制得的金锡合金热沉薄膜经300℃空气老化试验后，测得热导率为63W/m·K，拉伸强度为3.6Mpa。
实施例二
本实施例为热沉基板的制备
1、清洗：
先将60mm*50mm*0.2mm抛光氮化铝基片放入丙酮中浸润5分钟；将基片放入无水乙醇中浸润5分钟，将清洗物用水冲洗干净后在纯水中超声清洗5分钟；使用干燥氮气吹干。
2、过渡金属层：
将氮化铝通过镂空的工装夹具安装在镀膜设备内，所使用的设备是磁控溅射镀膜设备。使用99.99％纯度的金属铬靶材镀膜过渡层，厚度为50nm。真空镀膜参数为：真空度1.0×10-4Pa；溅射气体：氩气；溅射气压0.5Pa，溅射方式：直流溅射；陶瓷基片温度200℃；溅射功率1000w；镀膜偏压3kV。
3、金锡合金热沉薄膜的制备：
使用99.99％纯度的金靶和锡靶，进行金锡合金层的镀膜。为制备金锡合金，首先进行金层和锡层厚度进行计算，为制备金80％锡20％合金，根据公式d×s×ρ＝m可以计算得d_金:d_锡＝1.5:1，即金锡的厚度比为1.5比1。制作2.5μm厚的金锡合金，按照5层金锡金锡金结构，金锡金锡金厚度分别为0.5μm，0.5μm，0.5μm，0.5μm，0.5μm。真空镀膜参数为：真空度1.0×10-4Pa；溅射气体：氩气；溅射气压0.5Pa，溅射方式：直流溅射；陶瓷基片温度200℃；溅射功率1000w；镀膜偏压3kV。
4、共晶热处理：
共晶热处理的温度采用的是280℃，升温速率为10℃/min，温度升高至280℃后保持温度时间为3min，随后降温至室温，降温速率为10℃/min。
5、切割：
使用DISCO切割机，刀片型号0.1mm，刀片转速20000rpm，切割水流0.9mL/s，晶片厚度0.19mm，胶片厚度0.06mm，进刀速度3mm/s，刀片高度0.1mm。
以上所述，以上实施例仅用以说明本发明实施例的技术方案，而非对其限制；尽管参照前述实施例对本发明实施例进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明实施例各实施例技术方案的精神和范围。
Claims (10)
1.一种金锡合金热沉薄膜的制备方法，其特征在于，包括以下步骤：
采用物理气相沉积法将金层和锡层依次交错镀膜于陶瓷基板上的过渡金属层上后，通过共晶热处理制得金锡合金热沉薄膜。
2.根据权利要求1所述的制备方法，其特征在于，所述镀膜为磁控溅射镀膜、电子束蒸发镀膜和/或电阻蒸发镀膜。
3.根据权利要求1所述的制备方法，其特征在于，所述共晶热处理的温度为260℃-320℃，时间为3min。
4.根据权利要求1所述的制备方法，其特征在于，所述金锡合金热沉薄膜的总厚度为0.3μm～2μm。
5.根据权利要求1所述的制备方法，其特征在于，所述金锡合金热沉薄膜的总层数为奇数；
所述金锡合金热沉薄膜的最上层和最下层为金层。
6.权利要求1至5任意一项所述的制备方法制得的金锡合金热沉薄膜。
7.一种热沉基板，其特征在于，包括：从下至上依次设置的陶瓷基板、过渡金属层和权利要求6所述的金锡合金热沉薄膜。
8.根据权利要求7所述的热沉基板，其特征在于，所述过渡金属层厚度为10mm～100nm。
9.根据权利要求7所述的热沉基板，其特征在于，所述过渡金属层通过物理气相沉积的方法镀膜于所述陶瓷基板的表面。
10.一种LED器件，其特征在于，包括权利要求7所述的热沉基板和焊接在所述热沉基板表面的LED芯片。
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Application publication date: 20210511 |