CN112760622A - 一种异质结太阳能电池pecvd设备的真空腔室 - Google Patents
一种异质结太阳能电池pecvd设备的真空腔室 Download PDFInfo
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Abstract
本发明公开一种异质结太阳能电池PECVD设备的真空腔室，其特征在于，包括：真空壳体，沉积装置和升降装置；沉积装置设置在真空壳体内腔；升降装置设置在真空壳体底部；沉积装置包括匀气挡板；真空壳体顶面和底面分别开设有进气口和出气口；匀气挡板的侧壁与真空壳体内壁顶部固接；真空壳体内腔中部固接有喷淋板；真空壳体内腔底部设置有承载机构；承载机构的底面与升降装置顶部固接；匀气挡板顶面中部开设有第一匀气孔；第一匀气孔两侧分别对称开设有第二匀气孔；匀气挡板顶面两最外侧分别对称开设有第三匀气孔。
Description
技术领域
本发明涉及PECVD设备技术领域，特别是涉及一种异质结太阳能电池PECVD设备的真空腔室。
背景技术
异质结(HIT)太阳能电池采用非晶硅薄膜/单晶硅衬底的异质结结构，这是异质结太阳能电池与传统太阳能电池最大的不同之处，它结合了单晶硅和非晶硅太阳能电池的优点。(1)温度特性优异。异质结电池采用非晶硅/晶硅异质结结构，具有较低的温度系数，仅为-0.25％/℃，并且在相同温度下，随着温度升高，可以比传统的晶体硅太阳能电池板产生更多的电能。(2)低温工艺。HIT电池制备过程中最高的温度就是利用PECVD制备非晶硅薄膜，仅为300℃左右，而传统晶硅电池采用热扩散法，温度可达900℃。低温工艺不仅大大节能，还可以避免硅片的热损伤和变形，于是衬底厚度就可以变薄。(3)较高的开压和效率。本征氢化非晶硅薄膜插入在P层、N层与衬底之间，有效钝化晶硅表面缺陷，降低表面悬挂键密度。带隙不同的非晶硅与单晶硅异质界面的存在，使得HIT电池的量子效率光谱较广。背面的N型衬底和本征氢化非晶硅薄膜与N型氢化非晶硅薄膜形成背表面场，少子在界面的复合得到了有效的控制。(4)低成本。较低的制备温度可以降低能耗，较薄的硅衬底可以减少原料消耗，并且较低的制备温度允许衬底还可以使用品质较低的晶体硅甚至多晶硅材料。两方面使得HIT电池成本明显降低。
异质结太阳能电池的结构中非晶硅薄膜的质量对异质结太阳能电池的性能起决定性作用，而非晶硅薄膜的质量是由薄膜的制备方法和工艺决定的。非晶硅薄膜的制备的方法可以分为两类：一类是利用物理气相蒸发的生长，例如溅射法、真空蒸发法等。一类是利用化学气相沉积的生长，例如等离子体增强化学气相沉积法(PECVD)、热丝化学气相沉积法、微波等离子回旋共振化学气相沉积法等。
其中PECVD(Plasma Enhanced Chemical Vapor Deposition)法是目前实际生产非晶硅薄膜采用的最多的方法，PECVD设备是借助射频使含有薄膜成分原子的气体电离，在局部形成等离子体，而等离子体化学活性很强，很容易发生反应，在硅片上沉积出所期望的薄膜，被广泛的应用于太阳能电池导电薄膜的制作中。非晶硅薄膜的制备工艺对反应速度和膜层均匀性有一定的要求，尤其是膜层的均匀性是决定异质结太阳能电池最终质量的重要因素。在实际生产中，为了提高电池片的生产效率，增加一次处理的硅片的数量，设备腔体尺寸越来越大。设备腔体尺寸的增加会导致反应气体在两极板间分布的不均匀性变大，反应气体集中在两极板中心位置，四周气体分布逐渐减少。气体在硅片表面的浓度(或压力)分布均匀与否，直接影响薄膜厚度的均匀性，甚至对膜的成分、结构及性能也会产生影响。
因此，在生产异质结太阳能电池的PECVD设备中，如果能够解决气体喷淋均匀性的问题，必将具有广阔的工业应用前景。
发明内容
本发明的目的是提供一种异质结太阳能电池PECVD设备的真空腔室，以解决上述现有技术存在的问题，能够实现使得通过匀气挡板的气流分布均匀化，提高薄膜沉积的质量。
为实现上述目的，本发明提供了如下方案：本发明提供一种异质结太阳能电池PECVD设备的真空腔室，包括：真空壳体，沉积装置和升降装置；所述沉积装置设置在所述真空壳体内腔；所述升降装置设置在所述真空壳体底部；
所述沉积装置包括匀气挡板；所述真空壳体顶面和底面分别开设有进气口和出气口；所述匀气挡板的侧壁与所述真空壳体内壁顶部固接；所述真空壳体内腔中部固接有喷淋板；所述真空壳体内腔底部设置有承载机构；所述承载机构的底面与所述升降装置顶部固接；所述匀气挡板顶面中部开设有第一匀气孔；所述第一匀气孔两侧分别对称开设有第二匀气孔；所述匀气挡板顶面两最外侧分别对称开设有第三匀气孔。
优选的，所述第一匀气孔宽度为70-90mm，长度为650-750mm；所述第二匀气孔宽度为100-130mm，长度为700-800mm；所述第三匀气孔宽度为130-170mm，长度为750-850mm。
优选的，所述承载机构包括承载板；所述承载板的底面与所述升降装置顶部固接；所述承载板的顶面设置有载板；所述载板的顶面放置有硅片。
优选的，设备真空壳体宽度为1400mm，采用不锈钢材料，真空壳体两侧设有可开关的闸阀，用于待处理硅片进出。
优选的，所述喷淋板电性连接有射频电源；所述喷淋板顶面均匀开设有若干喷淋孔。
优选的，所述承载板内嵌设有电阻丝。
优选的，所述出气口连通有真空泵。
优选的，所述真空壳体的一侧开设有输入口；所述真空壳体的另一侧开设有输出口。
优选的，硅片用载板输入和输出，载板尺寸为1000mm*900mm，可以承载25片156mm*156mm的硅片衬底，硅片可以为P型晶体硅或者N型晶体硅。
优选的，喷淋板电性连接13.56MHz的射频电源，承载板通过升降装置接地。载板的底面与承载板的顶面固接；通电后，喷淋板和载板之间可以产生电场放电。
优选的，喷淋板、载板要作为放电的上下电极，使用金属板件制作。喷淋板和载板均为方形铝板件。将硅片放置在载板上，控制承载板中的电阻加热丝对硅片进行加热，可以控制承载板的温度在250℃，预热硅片，加快沉积反应速度。
优选的，升降装置支撑载板和承载板，可以控制喷淋板与载板之间的间距，根据不同的沉积条件可以调节两者之间的间距，以找到最佳薄膜沉积间距，使沉积出来的薄膜质量好。
优选的，所述真空壳体两侧设置有可开关的闸阀，用于待处理所述硅片进出。
本发明公开了以下技术效果：对匀气挡板上孔的分布进行非均匀设计，使得通过匀气挡板的气流分布均匀化，提高薄膜沉积的质量。本发明实施的成本低，但却高效的改善了气流分布的均匀性。本发明匀气挡板的设计不仅适用于沉积非晶硅的PECVD设备，而且还适用于其他平板式带喷淋板的PECVD设备。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为本发明的结构示意图。
图2为本发明匀气挡板结构示意图。
图3为本发明载板结构示意图。
图4为本发明喷淋板结构示意图。
图5为本发明升降装置的结构示意图。
其中，1-进气口，2-真空壳体，3-匀气挡板，4-喷淋板，5-硅片，6-载板，7-承载板，8-出气口，9-升降装置，10-真空泵，11-升降壳体，12-双向丝杠，13-大齿轮，14-升降电机，15-小齿轮，16-倾斜滑块，17-活动杆。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图和具体实施方式对本发明作进一步详细的说明。
本发明提供一种异质结太阳能电池PECVD设备的真空腔室，包括：真空壳体2，沉积装置和升降装置9；沉积装置设置在真空壳体2内腔；升降装置9设置在真空壳体2底部；
沉积装置包括匀气挡板3；真空壳体2顶面和底面分别开设有进气口1和出气口8；匀气挡板3的侧壁与真空壳体2内壁顶部固接；真空壳体2内腔中部固接有喷淋板4；真空壳体2内腔底部设置有承载机构；承载机构的底面与升降装置9顶部固接；匀气挡板3顶面中部开设有第一匀气孔；第一匀气孔两侧分别对称开设有第二匀气孔；匀气挡板3顶面两最外侧分别对称开设有第三匀气孔。
第一匀气孔宽度为70-90mm，长度为650-750mm；第二匀气孔宽度为100-130mm，长度为700-800mm；第三匀气孔宽度为130-170mm，长度为750-850mm。
承载机构包括承载板7；承载板7的底面与升降装置9顶部固接；承载板7的顶面设置有载板6；载板6的顶面放置有硅片5。
喷淋板4电性连接有射频电源；喷淋板4顶面均匀开设有若干喷淋孔。
承载板7内嵌设有电阻丝。
出气口8连通有真空泵10。
真空壳体2的一侧开设有输入口；真空壳体2的另一侧开设有输出口。
真空壳体2两侧设置有可开关的闸阀，用于待处理硅片5进出。
本发明的一个实施例中，匀气挡板3采用铝，第一匀气孔宽度为80mm，长度为736mm；第二匀气孔宽度为115mm，长度为755mm；第三匀气孔宽度为152mm，长度为792mm。匀气孔的宽度和长度由内向外逐渐增大，这是因为从进气口1进来的气体集中分布在匀气挡板3的中心，所以中心开的孔的面积较两侧更小，由于通过匀气挡板3两侧气体流量小，需要更大面积的孔让反应气体通过，使得通过匀气挡板3各个位置的气体流量接近一致，从而达到匀气的目的。从进气口1进入的反应气体经匀气挡板3孔口匀流，均匀喷入喷淋板4.
在本发明的另一个实施例中，使用真空泵10将设备真空壳体2抽真空，反应气体硅烷与氢气按一定比例均匀混合后从进气口1进入真空壳体2中，这样将反应气体均匀混合后再通入真空壳体2的操作有利于不同反应气体均匀混合，提高非晶硅沉积的均匀性。进入的反应气体集中分布在进气口1的位置，一部分通过匀气挡板3中间第一匀气孔，由于第一匀气孔的面积有限，通过的气体流量也有限，另外一部分气体只能通过匀气挡板3的第二匀气孔和第三匀气孔，达到了匀气分流的目的。反应气体通过匀气挡板3进入喷淋板4，匀气挡板3的存在使得进入喷淋板4的气体较均匀的分布在喷淋板4上。喷淋板4上阵列的喷淋孔为直径8mm的圆柱孔，喷淋孔将气体进一步均匀化。通过喷淋板4的气体进入两极板中间，喷淋板4已经连接上了13.56MHz的射频电源，载板6接地，产生电场放电。在电场的作用下硅烷和氨气发生等离子体放电反应，在硅片5表面沉积出非晶硅薄膜。气体在硅片表面的浓度(或压力)分布得越均匀，沉积的薄膜厚度越均匀，薄膜质量也越好。反应完的剩余气体在真空泵10的作用下，从承载板7与真空壳体2的间隙中抽出，最后从出气口8进入尾气处理系统。
在本发明的另一个实施例中，升降装置9包括升降壳体11；升降壳体11内腔底部设置有双向丝杠12；所述双向丝杠12的两端分别与升降壳体11两相对内壁转动连接；所述双向丝杠12的一端套接有大齿轮13；所述升降壳体11的侧壁固接有升降电机14；所述升降电机14的输出轴贯穿所述升降壳体11侧壁传动连接有小齿轮15；所述大齿轮14与所述小齿轮15相互啮合；所述双向丝杠12的外壁通过螺纹连接有两倾斜滑块16；两所述倾斜滑块16倾斜面滑动连接有活动杆17；所述活动杆17的顶端贯穿所述升降壳体11顶面与所述承载板7底面固接。
在本发明的描述中，需要理解的是，术语“纵向”、“横向”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
以上所述的实施例仅是对本发明的优选方式进行描述，并非对本发明的范围进行限定，在不脱离本发明设计精神的前提下，本领域普通技术人员对本发明的技术方案做出的各种变形和改进，均应落入本发明权利要求书确定的保护范围内。
Claims (8)
1.一种异质结太阳能电池PECVD设备的真空腔室，其特征在于，包括：真空壳体(2)，沉积装置和升降装置(9)；所述沉积装置设置在所述真空壳体(2)内腔；所述升降装置(9)设置在所述真空壳体(2)底部；
所述沉积装置包括匀气挡板(3)；所述真空壳体(2)顶面和底面分别开设有进气口(1)和出气口(8)；所述匀气挡板(3)的侧壁与所述真空壳体(2)内壁顶部固接；所述真空壳体(2)内腔中部固接有喷淋板(4)；所述真空壳体(2)内腔底部设置有承载机构；所述承载机构的底面与所述升降装置(9)顶部固接；所述匀气挡板(3)顶面中部开设有第一匀气孔；所述第一匀气孔两侧分别对称开设有第二匀气孔；所述匀气挡板(3)顶面两最外侧分别对称开设有第三匀气孔。
2.根据权利要求1所述的一种异质结太阳能电池PECVD设备的真空腔室，其特征在于：所述第一匀气孔宽度为70-90mm，长度为650-750mm；所述第二匀气孔宽度为100-130mm，长度为700-800mm；所述第三匀气孔宽度为130-170mm，长度为750-850mm。
3.根据权利要求1所述的一种异质结太阳能电池PECVD设备的真空腔室，其特征在于：所述承载机构包括承载板(7)；所述承载板(7)的底面与所述升降装置(9)顶部固接；所述承载板(7)的顶面设置有载板(6)；所述载板(6)的顶面放置有硅片(5)。
4.根据权利要求1所述的一种异质结太阳能电池PECVD设备的真空腔室，其特征在于：所述喷淋板(4)电性连接有射频电源；所述喷淋板(4)顶面均匀开设有若干喷淋孔。
5.根据权利要求1所述的一种异质结太阳能电池PECVD设备的真空腔室，其特征在于：所述承载板(7)内嵌设有电阻丝。
6.根据权利要求1所述的一种异质结太阳能电池PECVD设备的真空腔室，其特征在于：所述出气口(8)连通有真空泵(10)。
7.根据权利要求1所述的一种异质结太阳能电池PECVD设备的真空腔室，其特征在于：所述真空壳体(2)的一侧开设有输入口；所述真空壳体(2)的另一侧开设有输出口。
8.根据权利要求1所述的一种异质结太阳能电池PECVD设备的真空腔室，其特征在于：所述真空壳体(2)两侧设置有可开关的闸阀，用于待处理所述硅片(5)进出。
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