CN112737390A - Melt-blown fabric electret power supply based on PWM technology - Google Patents

Melt-blown fabric electret power supply based on PWM technology Download PDF

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Publication number
CN112737390A
CN112737390A CN202011559986.8A CN202011559986A CN112737390A CN 112737390 A CN112737390 A CN 112737390A CN 202011559986 A CN202011559986 A CN 202011559986A CN 112737390 A CN112737390 A CN 112737390A
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field effect
effect transistor
mos field
power supply
voltage
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Inventor
张雷
郑一专
吴典
周玲玲
崔瑾
姚子豪
邹昊
杨德健
任磊
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Nantong University
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Nantong University
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
    • H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
    • H02M7/53871—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with automatic control of output voltage or current
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
    • H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
    • H02M7/06—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes without control electrode or semiconductor devices without control electrode

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The invention relates to the technical field of a melt-blown fabric electret power supply, in particular to a melt-blown fabric electret power supply based on a Pulse Width Modulation (PWM) technology, which comprises an alternating current power supply VacThe circuit comprises a filter capacitor C, an uncontrolled rectifier bridge, an inverter circuit and a high-voltage package; AC power supply VacThe voltage-stabilizing circuit is connected with an uncontrolled rectifier bridge, the uncontrolled rectifier bridge is connected with an inverter circuit, a filter capacitor C is connected between the uncontrolled rectifier bridge and the inverter circuit in parallel, and the inverter circuit is connected with a high-voltage package; the high-voltage pack comprises a boosting transformer connected with the inverter circuit and a high-voltage side rectifier bridge connected with the boosting transformer; the invention realizes the uncontrolled rectification output voltage V by controlling the inverter circuit through the PWM technologyABThe inversion of (2) is realized by adjusting the modulation degree to adjust the inversion voltage, and the output direct-current high voltage is adjusted after high voltage package; compared with the traditional melt-blown fabric electret power supply, the invention reduces the current stress of the device, prolongs the service life of the device, improves the reliability of the circuit and simplifies the measurement of circuit parametersAnd (4) the circuit topology is simple and the installation is convenient.

Description

Melt-blown fabric electret power supply based on PWM technology
Technical Field
The invention relates to the technical field of a melt-blown fabric electret power supply, in particular to a melt-blown fabric electret power supply based on a PWM (pulse width modulation) technology.
Background
At present, in the meltblown power supply, an LLC resonant circuit is often used as a power supply topology, and its structure includes: uncontrolled rectifier bridge, LLC resonance inverter circuit, high-voltage package. The most critical component is the LLC resonant circuit, whose main functions are: the output voltage is adjusted by adjusting the frequency of the input voltage of the LLC resonant circuit to change the output impedance of the LLC resonant inverter circuit. In general, when the LLC circuit topology is applied to a melt-blown fabric electret power supply, L is usedr、CrThe characteristic of the resonant circuit, its current stress is large, cause the enormous burden to the device in the bridge circuit of contravariant, it is easy to damage the power electronic device in the bridge circuit of contravariant; traditional fused-spray electret power supply based on LLC resonant circuit, L thereofr、CrThe parameter calculation is complicated, and the design difficulty is greatly increased. With the development of production technology, the requirements on the meltblown electret power supply are continuously increased at present, higher requirements are required on the stability of the power supply, and a power supply topology with good stability and simple design is urgently needed. Therefore, the invention provides the melt-blown fabric electret power supply based on the PWM technology, which can reduce the calculation difficulty of circuit parameters and improve the stability of a circuit.
Disclosure of Invention
The invention aims to solve the defects in the prior art, and provides a melt-blown electret power supply based on a PWM (pulse-width modulation) technology, which can reduce the current stress in an inverter circuit, improve the reliability of power electronic devices and reduce the design difficulty of circuit parameters.
In order to achieve the purpose, the invention adopts the following technical scheme: a melt-blown fabric electret power supply based on PWM technology comprises alternating currentSource VacThe circuit comprises a filter capacitor C, an uncontrolled rectifier bridge, an inverter circuit and a high-voltage package; the AC power supply VacThe high-voltage transformer is connected with an uncontrolled rectifier bridge, the uncontrolled rectifier bridge is connected with an inverter circuit, a filter capacitor C is connected between the uncontrolled rectifier bridge and the inverter circuit in parallel, and the inverter circuit is connected with a high-voltage pack;
the uncontrolled rectifier bridge is composed of a first diode VD1A second diode VD2A third diode VD3And a fourth diode VD4Is formed by the first diode VD1And a second diode VD2Intermediate terminal of and AC power supply VacIs connected to the third diode VD3And a fourth diode VD4Intermediate terminal of and AC power supply VacThe other end of the first and second connecting rods is connected;
the inverter circuit is composed of a first MOS field effect transistor M1A second MOS field effect transistor M2And a third MOS field effect transistor M3And a fourth MOS field effect transistor M4Forming;
the high-voltage pack comprises a boosting transformer connected with the inverter circuit and a high-voltage side rectifier bridge connected with the boosting transformer.
Preferably, the first MOS field effect transistor M1And a second MOS field effect transistor M2The middle end of the third MOS field effect transistor M is connected with one end of the low-voltage side of the step-up transformer3And a fourth MOS field effect transistor M4The middle end of the step-up transformer is connected with the other end of the low-voltage side of the step-up transformer, and the high-voltage side of the step-up transformer is connected with the high-voltage side rectifier bridge.
Preferably, the parameter selection step of the device MOS field effect transistor in the inverter circuit is as follows:
when the first MOS field effect transistor M1And a fourth MOS field effect transistor M4When it is turned on, it flows through the second MOS FET2And a third MOS field effect transistor M3Is 0, flows through the first MOS field effect transistor M1And a fourth MOS field effect transistor M4The current magnitude of the transformer depends on the load current and the exciting current of the boosting transformer in the high-voltage package, and the calculation formula is as follows:
iM＝i0+NiL
wherein iMFor flowing through the first MOS field effect transistor (M)1) A second MOS field effect transistor (M)2) Current of (i)0Is the exciting current of the step-up transformer in the high-voltage package, N is the turn ratio of the secondary side to the primary side of the step-up transformer in the high-voltage package, iLOutputting current for a melt-blown fabric electret power supply;
when the second MOS field effect transistor M2And a third MOS field effect transistor M3When it is turned on, it flows through the first MOS FET1And a fourth MOS field effect transistor M4Is 0, flows through the second MOS field effect transistor M2And a third MOS field effect transistor M3The current calculation formula of (a) is the same as the formula;
according to a formula, the current stress of the MOSFET device can be calculated according to the output current of the meltblown electret power supply, the exciting current of the boosting transformer in the high-voltage pack and the turn ratio, and the current parameter of the MOSFET device is selected to be 1.5-2 times of the current parameter in consideration of the allowance.
Preferably, the implementation method of the meltblown electret power supply based on the PWM technology comprises:
A. when the first MOS field effect transistor M1And a fourth MOS field effect transistor M4When it is turned on, the second MOS FET M2And a third MOS field effect transistor M3In the off state, the current flows through the uncontrolled rectifying circuit and the first MOS field effect transistor M in sequence1The low-voltage side of the step-up transformer and a fourth MOS field effect transistor M4Finally, the alternating current power supply flows back through the uncontrolled rectifying circuit; when the second MOS field effect transistor M2And a third MOS field effect transistor M3When it is turned on, the first MOS FET M1And a fourth MOS field effect transistor M4In the off state, the current flows in through the uncontrolled rectifier bridge and respectively passes through the third MOS field effect transistor M3A second MOS field effect transistor M on the low-voltage side of the step-up transformer2Then, the water flows out through an uncontrolled rectifier bridge;
B. first MOS field effect transistor M1And a fourth MOS field effect transistor M4A second MOS FET as a first group of switching devices2And a third MOS field effect transistor M3The second group of switching devices are in complementary states during operation, and are alternately conducted, so that current only flows through the low-voltage side of the step-up transformer through one group of switching devices at the same time, and the voltage of the low-voltage side of the step-up transformer is only + V at a certain timeABor-VABTwo clock conditions, wherein VABVoltage between output side A, B of the uncontrolled rectifier bridge;
C. controlling a first MOS field effect transistor M by PWM technique1A second MOS field effect transistor M2And a third MOS field effect transistor M3And a fourth MOS field effect transistor M4Wherein the first MOS field effect transistor M1And a fourth MOS field effect transistor M4Is consistent with the control signal of the second MOS field effect transistor M2And a third MOS field effect transistor M3The control signals of the two groups of devices are consistent, and the control signals of the two groups of devices are complementary; when the voltage boosting transformer runs, the PWM signal is changed in a sine mode, and the voltages at two ends of the low-voltage side of the voltage boosting transformer are also changed in a sine mode;
D. through PWM modulation technique, make the amplitude range increase of step-up transformer low pressure side voltage, its principle is: the amplitude of the voltage on the low-voltage side of the boosting transformer is changed by modulating the signal modulation degree, namely changing the duty ratio of the PWM signal;
E. the amplitude of the voltage at the input side of the high-voltage bag of the meltblown fabric electret power supply is variable, so that the amplitude of the output voltage of the meltblown fabric electret power supply is variable.
Preferably, the output voltage amplitude of the meltblown electret power supply is dependent on four factors: the output voltage of the uncontrolled rectifier bridge, the output voltage of the inverter circuit, the step-up ratio of the step-up transformer and the high-voltage side rectifier bridge. Wherein the output voltage of the uncontrolled rectifier bridge depends on the AC supply VABIt is generally unchanged; the output voltage of the inverter circuit depends on the input voltage and the modulation signal, the input voltage is provided by the uncontrolled rectifier bridge, the uncontrolled rectifier bridge cannot be changed by people, and the modulation signal can change the modulation degree according to the requirement so as to change the amplitude of the voltage; the boosting ratio of the boosting transformer depends on the primary and secondary coil ratios of the transformer, is a constant and is unchangeable; working principle of high-voltage side rectifier bridge and rectifier bridgeThe non-commutatable bridge is similar in that it depends on the voltage at the high side of the step-up transformer, and the commutation circuit itself does not have the ability to change the magnitude of the voltage. To conclude, the following steps are carried out: the amplitude of the output voltage of the meltblown electret power supply can be changed by changing the modulation degree of the modulation signal.
Compared with the prior art, the invention has the following beneficial effects:
(1) in the melt-blown fabric electret power supply topological structure based on the PWM control circuit, the L in a key structure inverter bridge is cancelledr、CrThe resonant circuit structure changes the on-duty ratio of the devices in the inverter bridge by the PWM modulation technology to change the output voltage, thereby avoiding using Lr、CrThe circuit performs energy storage and follow current functions in the inversion process, thereby avoiding Lr、CrThe problem of overlarge current stress caused by a circuit makes a melt-blown fabric electret power supply more reliable.
(2) The invention provides a melt-blown fabric electret power supply based on a PWM (pulse-width modulation) technology, which adopts the PWM control technology to invert rectified output voltage through the PWM modulation technology, wherein the voltage amplitude of inverted output is related to inverted input voltage and PWM modulation degree; in the topology of the present invention, the amplitude of the inverted input voltage, i.e., the rectified output voltage, is not changed, so the inverted output voltage is only related to the PWM modulation degree. The output voltage amplitude of the melt-blown fabric electret power supply can be changed through the PWM control signal because the output of the high-voltage package is determined by the inversion output voltage and the output of the high-voltage package is the output of the melt-blown fabric electret power supply. Compared with the traditional LLC circuit topology, the output voltage regulation of the invention is simpler and more intuitive.
(3) The invention provides a melt-blown fabric electret power supply based on a PWM (pulse-width modulation) technology, which is characterized in that under the condition that the output frequency of a control circuit is not changed, the voltage is adjusted by adjusting the modulation degree; compared with the traditional control method for controlling the frequency change by fixing the pulse width of the LLC resonant circuit, the PWM control method is simple to realize and is not limited by hardware parameters.
(4) Compared with the traditional meltblown electret power supply, the meltblown electret power supply based on the PWM technology provided by the invention has the advantages that the current stress of the device is reduced, the service life of the device is prolonged, the reliability of the circuit is improved, the calculation of circuit parameters is simplified, the circuit topology is simple, and the installation is convenient.
Drawings
FIG. 1 is a circuit topology of the background art;
FIG. 2 is a circuit topology of the present invention;
FIG. 3 is a schematic diagram of PWM control signals of the inverter circuit according to the present invention;
fig. 4 is a schematic diagram of PWM modulation signals of the inverter circuit of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inner", "outer", "front", "rear", "both ends", "one end", "the other end", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "disposed," "connected," and the like are to be construed broadly, such as "connected," which may be fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
As shown in fig. 2, the present invention provides a technical solution: a melt-blown fabric electret power supply based on PWM technology comprises an AC power supply VacThe circuit comprises a filter capacitor C, an uncontrolled rectifier bridge, an inverter circuit and a high-voltage package; the AC power supply VacThe high-voltage transformer is connected with an uncontrolled rectifier bridge, the uncontrolled rectifier bridge is connected with an inverter circuit, a filter capacitor C is connected between the uncontrolled rectifier bridge and the inverter circuit in parallel, and the inverter circuit is connected with a high-voltage pack;
the uncontrolled rectifier bridge is composed of a first diode VD1A second diode VD2A third diode VD3And a fourth diode VD4Is formed by the first diode VD1And a second diode VD2Intermediate terminal of and AC power supply VacIs connected to the third diode VD3And a fourth diode VD4Intermediate terminal of and AC power supply VacThe other end of the first and second connecting rods is connected;
the inverter circuit is composed of a first MOS field effect transistor M1A second MOS field effect transistor M2And a third MOS field effect transistor M3And a fourth MOS field effect transistor M4Forming;
the high-voltage pack comprises a boosting transformer connected with the inverter circuit and a high-voltage side rectifier bridge connected with the boosting transformer.
Specifically, the first MOS field effect transistor M1And a second MOS field effect transistor M2The middle end of the third MOS field effect transistor M is connected with one end of the low-voltage side of the step-up transformer3And a fourth MOS field effect transistor M4The middle end of the step-up transformer is connected with the other end of the low-voltage side of the step-up transformer, and the high-voltage side of the step-up transformer is connected with the high-voltage side rectifier bridge.
Specifically, the realization method of the melt-blown electret power supply based on the PWM technology comprises the following steps:
A. when the first MOS field effect transistor M1And a fourth MOS field effect transistor M4When it is turned on, the second MOS FET M2And the thirdMOS field effect transistor M3Is in a turn-off state, at the moment, the first MOS field effect transistor M1And a fourth MOS field effect transistor M4Can be equivalent to a wire, and the current flows through the uncontrolled rectifying circuit and the first MOS field effect transistor M in sequence1The low-voltage side of the step-up transformer and a fourth MOS field effect transistor M4Finally, the alternating current power supply flows back through the uncontrolled rectifying circuit; when the second MOS field effect transistor M2And a third MOS field effect transistor M3When it is turned on, the first MOS FET M1And a fourth MOS field effect transistor M4In an off state, at this time, the second MOS FET M2And a third MOS field effect transistor M3Equivalent to a wire, and the current flows in through the uncontrolled rectifier bridge and respectively passes through the third MOS field effect transistor M3A second MOS field effect transistor M on the low-voltage side of the step-up transformer2Then, the water flows out through an uncontrolled rectifier bridge;
B. first MOS field effect transistor M1And a fourth MOS field effect transistor M4A second MOS FET as a first group of switching devices2And a third MOS field effect transistor M3The second group of switching devices are in complementary states during operation, and are alternately conducted, so that current only flows through the low-voltage side of the step-up transformer through one group of switching devices at the same time, and the voltage of the low-voltage side of the step-up transformer is only + V at a certain timeABor-VABTwo clock conditions, wherein VABVoltage between output side A, B of the uncontrolled rectifier bridge;
C. the first MOS field effect transistor M is controlled by modulating wave of PWM technology1A second MOS field effect transistor M2And a third MOS field effect transistor M3And a fourth MOS field effect transistor M4Wherein the first MOS field effect transistor M1And a fourth MOS field effect transistor M4Is consistent with the control signal of the second MOS field effect transistor M2And a third MOS field effect transistor M3The control signals of the two groups of devices are consistent, and the control signals of the two groups of devices are complementary; when the voltage boosting transformer operates, the PWM signal is changed in a sine mode, so that the voltages at two ends of the low-voltage side of the voltage boosting transformer are also changed in a sine mode;
D. as shown in fig. 3, the amplitude range of the low-voltage side voltage of the step-up transformer can be increased by the PWM modulation technique, and the principle is as follows: the amplitude of the voltage on the low-voltage side of the boosting transformer is changed by modulating the signal modulation degree, namely changing the duty ratio of the PWM signal; the ratio of the modulation amplitude to the triangular carrier amplitude is referred to as the modulation degree. When the modulation degree is increased, the amplitude of the voltage at the low-voltage side of the corresponding step-up transformer is increased, and when the modulation degree reaches the upper limit, the amplitude of the voltage at the low-voltage side of the step-up transformer is maximized; when the modulation degree is reduced, the amplitude of the voltage on the low-voltage side of the corresponding step-up transformer is reduced, and when the modulation degree reaches the lower limit, the amplitude of the voltage on the low-voltage side of the step-up transformer becomes minimum. The amplitude of the voltage can be determined by changing the upper limit and the lower limit of the modulation degree;
E. as shown in FIG. 4, a sine modulation wave and an isosceles triangle carrier are compared, the on-off of the switching device is controlled at the natural intersection point of the two waveforms, and when the modulation wave is below the carrier, the first MOS field effect transistor M1And a fourth MOS field effect transistor M4Turn on, second MOS FET M2And a third MOS field effect transistor M3Turn off, when the modulated wave is above the carrier, the second MOS FET M2And a third MOS field effect transistor M3Turn on, first MOS FET M1And a fourth MOS field effect transistor M4Turning off the first MOS FET M1And a fourth MOS field effect transistor M4And (4) opening. The duty cycle of the PWM control signal varies sinusoidally, and therefore the output voltage also varies sinusoidally, i.e., VCDAnd the output voltage is modulated in a positive selection mode.
Specifically, the inverter circuit of the present invention includes the following device parameter selection steps:
when the first MOS field effect transistor M1And a fourth MOS field effect transistor M4When it is turned on, it flows through the second MOS FET2And a third MOS field effect transistor M3Is 0, flows through the first MOS field effect transistor M1And a fourth MOS field effect transistor M4The current magnitude of the transformer depends on the load current and the exciting current of the boosting transformer in the high-voltage package, and the calculation formula is as follows:
iM＝i0+NiL
wherein iMFor flowing through the first MOS field effect transistor M1A second MOS field effect transistor M2Current of (i)0Is the exciting current of the step-up transformer in the high-voltage package, N is the turn ratio of the secondary side to the primary side of the step-up transformer in the high-voltage package, iLOutputting current for a melt-blown fabric electret power supply;
when the second MOS field effect transistor M2And a third MOS field effect transistor M3When it is turned on, it flows through the first MOS FET1And a fourth MOS field effect transistor M4Is 0, flows through the second MOS field effect transistor M2And a third MOS field effect transistor M3The current calculation formula of (a) is the same as the formula;
according to a formula, the current stress of the MOSFET device can be calculated according to the output current of the meltblown electret power supply, the exciting current of the boosting transformer in the high-voltage pack and the turn ratio, and the current parameter of the MOSFET device is selected to be 1.5-2 times of the current parameter in consideration of the allowance.
In a traditional power supply topology based on an LLC resonant circuit, the current calculation formula is:
Figure BDA0002860238660000101
wherein IrIs the current of the resonant circuit, VoFor outputting a voltage, R, to the resonant circuitLIs a load resistance, and is,
Figure BDA0002860238660000102
is a VCDAnd current IrThe phase angle of (c). From the above formula, the current I of the LLC resonant circuitrAnd VCDLoad resistance RLI.e. VCDAnd current IrPhase angle of
Figure BDA0002860238660000103
It is related. Wherein
Figure BDA0002860238660000104
The calculation formula is as follows:
Figure BDA0002860238660000105
the phase angle can be calculated by the above formula
Figure BDA0002860238660000113
By substituting the above formula into the resonant current IrThe resonant current I can be calculated by a calculation formular. The current calculation process is complicated, the related parameters are many, the design of parameter values is difficult and complicated, the current stress of the device is large, and the reliability is reduced.
In a traditional meltblown electret power supply topology, assuming that a load is a resistance load, a calculation formula of a resonant inductor and a resonant capacitor in an LLC resonant circuit is as follows:
Figure BDA0002860238660000111
Figure BDA0002860238660000112
wherein R isLThe load resistance value of a melt-blown fabric electret power supply is obtained, n is the turn ratio of an original coil and an auxiliary coil of a transformer, eta is the conversion efficiency of the transformer, k is a constant which is generally 3-7, and the resonance frequency is set to be 100 kHz.
By combining the above two formulas, L can be obtainedr,CrThe value of (c). The formula calculation is complex, and the circuit design process is complicated.
The invention omits Lr,CrA resonant circuit for avoiding current parameter L during circuit designr,CrAnd (4) calculating. In summary, in the topology structure of the meltblown electret power supply based on the PWM technique, the L is eliminated in the inverter bridge of the key structurer、CrThe resonant circuit structure changes the on-duty ratio of the devices in the inverter bridge by the PWM modulation technology to change the output voltage, thereby avoiding using Lr、CrThe circuit performs the energy storage and follow current functions in the inversion process,thereby avoiding Lr、CrThe problem of overlarge current stress caused by a circuit makes a melt-blown fabric electret power supply more reliable.
The invention adopts PWM control technology to invert the output voltage of the uncontrolled rectifier bridge through PWM modulation technology, the voltage amplitude of the inverted output is related to the inverted input voltage and PWM modulation degree, while in the invention, the inverted input voltage, namely the rectified output voltage, has unchanged voltage amplitude, so the inverted output voltage is only related to the PWM modulation degree. Since the inverted output voltage determines the output of the high voltage packet, i.e., the output of the meltblown electret power supply, the amplitude of the output voltage of the meltblown electret power supply can be changed by changing the modulation degree of the PWM control signal. Compared with the traditional LLC circuit topology, the PWM control mode in the invention is easier to realize, the current stress of the device is smaller, the reliability is higher, the circuit structure is simple, the resonance parameters do not need to be calculated in a complex way, and the installation is more convenient.
The invention is not described in detail, but is known to those skilled in the art.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.

Claims (4)

1. A melt-blown fabric electret power supply based on PWM technology is characterized by comprising an alternating current power supply (V)ac) The circuit comprises a filter capacitor (C), an uncontrolled rectifier bridge, an inverter circuit and a high-voltage package; the AC power supply (V)ac) Is connected with an uncontrolled rectifier bridge, the uncontrolled rectifier bridge is connected with an inverter circuit, a filter capacitor (C) is connected in parallel between the uncontrolled rectifier bridge and the inverter circuit, the filter capacitor (C) is connected in parallel between the uncontrolled rectifier bridge and the inverter circuitThe inverter circuit is connected with the high-voltage pack;
the uncontrolled rectifier bridge is composed of a first diode (VD)1) A second diode (VD)2) A third diode (VD)3) And a fourth diode (VD)4) Is formed of the first diode (VD)1) And a second diode (VD)2) Intermediate terminal of (2) and alternating current power supply (V)ac) Is connected to one end of the third diode (VD), the third diode (VD)3) And a fourth diode (VD)4) Intermediate terminal of (2) and alternating current power supply (V)ac) The other end of the first and second connecting rods is connected;
the inverter circuit is composed of a first MOS field effect transistor (M)1) A second MOS field effect transistor (M)2) And a third MOS field effect transistor (M)3) And a fourth MOS field effect transistor (M)4) Forming;
the high-voltage pack comprises a boosting transformer connected with the inverter circuit and a high-voltage side rectifier bridge connected with the boosting transformer.
2. A meltblown electret power supply based on PWM technique according to claim 1, characterized in that said first MOS field effect transistor (M)1) And a second MOS field effect transistor (M)2) Is connected with one end of the low-voltage side of the step-up transformer, and the third MOS field effect transistor (M)3) And a fourth MOS field effect transistor (M)4) The middle end of the step-up transformer is connected with the other end of the low-voltage side of the step-up transformer, and the high-voltage side of the step-up transformer is connected with the high-voltage side rectifier bridge.
3. A meltblown electret power supply based on PWM technique according to claim 2, characterized in that when the first MOS field effect transistor (M) is used1) And a fourth MOS field effect transistor (M)4) When it is on, it flows through the second MOS FET2) And a third MOS field effect transistor (M)3) Is 0, flows through the first MOS field effect transistor (M)1) And a fourth MOS field effect transistor (M)4) The current magnitude of the transformer depends on the load current and the exciting current of the boosting transformer in the high-voltage package, and the calculation formula is as follows:
iM＝i0+NiL
wherein iMFor flowing through the first MOS field effect transistor (M)1) A second MOS field effect transistor (M)2) Current of (i)0Is the exciting current of the step-up transformer in the high-voltage package, N is the turn ratio of the secondary side to the primary side of the step-up transformer in the high-voltage package, iLOutputting current for a melt-blown fabric electret power supply;
when the second MOS field effect transistor (M)2) And a third MOS field effect transistor (M)3) When it is on, it flows through the first MOS FET1) And a fourth MOS field effect transistor (M)4) Is 0, flows through the second MOS field effect transistor (M)2) And a third MOS field effect transistor (M)3) The current calculation formula of (a) is the same as the above formula.
4. The meltblown electret power supply based on PWM technology according to claim 1, wherein the method for implementing the meltblown electret power supply based on PWM technology comprises:
when the first MOS field effect transistor (M)1) And a fourth MOS field effect transistor (M)4) When it is turned on, the second MOS FET2) And a third MOS field effect transistor (M)3) In the off state, the current flows through the uncontrolled rectifying circuit and the first MOS field effect transistor (M)1) A fourth MOS field effect transistor (M) on the low-voltage side of the step-up transformer4) Finally, the alternating current power supply flows back through the uncontrolled rectifying circuit;
when the second MOS field effect transistor (M)2) And a third MOS field effect transistor (M)3) When it is turned on, the first MOS FET1) And a fourth MOS field effect transistor (M)4) In the off state, the current flows through the uncontrolled rectifier bridge and through the third MOS FET (M)3) A low-voltage side of the step-up transformer, a second MOS field effect transistor (M)2) And then flows out through an uncontrolled rectifier bridge.
CN202011559986.8A 2020-12-25 2020-12-25 Melt-blown fabric electret power supply based on PWM technology Pending CN112737390A (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101145736A (en) * 2007-08-28 2008-03-19 奇瑞汽车有限公司 A DC/DC converter of mixed driven car
CN201132164Y (en) * 2007-12-26 2008-10-15 成都金创立科技有限责任公司 Novel high-frequency high-voltage electrostatic dust collection power supply
US20120305535A1 (en) * 2004-07-13 2012-12-06 Lincoln Global, Inc. Power source for electric arc welding
CN203590046U (en) * 2013-12-16 2014-05-07 哈尔滨华富科技有限公司 AC stabilized power supply for mining
CN107070282A (en) * 2017-05-17 2017-08-18 中国铁道科学研究院 A kind of AuCT, traction power unit and vehicle

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120305535A1 (en) * 2004-07-13 2012-12-06 Lincoln Global, Inc. Power source for electric arc welding
CN101145736A (en) * 2007-08-28 2008-03-19 奇瑞汽车有限公司 A DC/DC converter of mixed driven car
CN201132164Y (en) * 2007-12-26 2008-10-15 成都金创立科技有限责任公司 Novel high-frequency high-voltage electrostatic dust collection power supply
CN203590046U (en) * 2013-12-16 2014-05-07 哈尔滨华富科技有限公司 AC stabilized power supply for mining
CN107070282A (en) * 2017-05-17 2017-08-18 中国铁道科学研究院 A kind of AuCT, traction power unit and vehicle

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