CN112725734A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
CN112725734A
CN112725734A CN202011080302.6A CN202011080302A CN112725734A CN 112725734 A CN112725734 A CN 112725734A CN 202011080302 A CN202011080302 A CN 202011080302A CN 112725734 A CN112725734 A CN 112725734A
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CN
China
Prior art keywords
chamber
chamber lid
inert gas
substrate
processing apparatus
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Granted
Application number
CN202011080302.6A
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Chinese (zh)
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CN112725734B (en
Inventor
张琼镐
卢熙成
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TES Co Ltd
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TES Co Ltd
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Publication of CN112725734A publication Critical patent/CN112725734A/en
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Publication of CN112725734B publication Critical patent/CN112725734B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Abstract

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having a structure that can efficiently perform a process without being affected by processes of adjacent substrates and facilitates maintenance of the inside of a chamber when performing a process such as vapor deposition on a plurality of substrates inside the chamber. The substrate processing apparatus includes: a chamber including a chamber body and a chamber lid closing an upper side of an opening of the chamber body; a plurality of recesses formed in the chamber cover to be spaced apart from each other by a predetermined distance; a plurality of shower heads disposed in a recess of the chamber lid to supply a process gas toward a substrate; a heat insulating portion extending to surround an inner sidewall of the recess; and a substrate support part which supports the substrate and is provided to be movable up and down to be inserted into the recess to form a processing space between the substrate support part, the head, and the heat insulating part.

Description

Substrate processing apparatus
Technical Field
The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having a structure that can efficiently perform a process without being affected by processes of adjacent substrates and facilitates maintenance of the inside of a chamber when performing a process such as vapor deposition on a plurality of substrates inside the chamber.
Background
Generally, a substrate processing apparatus includes a substrate support unit for supporting a substrate and a showerhead for supplying a process gas toward the substrate in a chamber to perform various processes on the substrate.
In this case, in the substrate processing apparatus of the related art, the showerhead is disposed to protrude from the chamber lid, and when the substrate moves in the chamber, interference may occur between the substrate and the showerhead.
In addition, in the substrate processing apparatus according to the related art, when a plurality of substrates are processed in the chamber, the process cannot be smoothly performed due to the influence of the process gas supplied from the adjacent shower heads.
In the substrate processing apparatus according to the related art, when maintenance work or the like is required for the head, the entire chamber lid is separated, and the separation work requires a lot of time and labor, and there is a possibility that other components such as an O-ring may be damaged during the separation work.
Disclosure of Invention
In order to solve the above-described problems, an object of the present invention is to provide a substrate processing apparatus that prevents interference between a substrate and a showerhead and is not affected by processes of adjacent substrates in processes performed on a plurality of substrates.
Another object of the present invention is to provide a substrate processing apparatus that can easily separate a chamber lid when work is required for a component inside a chamber such as a showerhead and can perform work by opening only a part of the chamber lid according to the component to be maintained.
The object of the present invention as described above is achieved by a substrate processing apparatus comprising: a chamber including a chamber body and a chamber lid closing an upper side of an opening of the chamber body; a plurality of recesses formed in the chamber cover to be spaced apart from each other by a predetermined distance; a plurality of shower heads disposed in a recess of the chamber lid to supply a process gas toward a substrate; a heat insulating portion extending to surround an inner sidewall of the recess; and a substrate support part which supports the substrate and is provided to be movable up and down to be inserted into the recess to form a processing space between the substrate support part, the head, and the heat insulating part.
Here, when the substrate support portion is raised and inserted into the recess, a space may be formed between the side surface of the substrate support portion and the heat insulating portion.
In this case, the heat insulating portion may be detachably provided on an inner wall of the recess.
Further, the chamber lid may be provided with an inert gas supply unit which is disposed along an edge of the recess and supplies an inert gas downward.
For example, the inert gas supply unit may include: a gas block disposed above the chamber lid and providing a flow path for moving an inert gas; and a plurality of inert gas supply rings disposed along an edge of the recess of the chamber lid and supplied with the inert gas of the gas block.
In this case, the respective flow passages connected by the plurality of inert gas supply rings may be symmetrically formed and have the same length in the gas block.
On the other hand, the inert gas supply ring may be provided with a first circulation space in which the inert gas circulates, a second circulation space communicating with the first circulation space through an auxiliary flow passage, and an injection portion communicating with the second circulation space and supplying the inert gas downward.
Also, the chamber cover may include: a first chamber lid disposed to be movable up and down with respect to the chamber body; a second chamber cover which is arranged below the first chamber cover in a vertically movable manner; and a lift rod disposed through the chamber body and connected to the first chamber lid and the second chamber lid to move the first chamber lid and the second chamber lid up and down, wherein an opening is formed in the second chamber lid, and the showerhead is disposed in the opening.
According to the present invention having the above-described configuration, the showerhead is disposed in the recess of the chamber lid, so that the interference between the substrate and the showerhead can be prevented, and the process of the adjacent substrate is not affected even when the process is performed on the plurality of substrates.
Further, according to the present invention, when a work is required for a component inside a chamber such as a shower head, the chamber lid can be easily separated by the lift lever, and the work can be easily performed by opening only the first chamber lid or opening all of the first chamber lid and the second chamber lid according to the component to be maintained.
Drawings
FIG. 1 is a side sectional view showing a state where a substrate supporting part is lowered in a substrate processing apparatus according to an embodiment of the present invention,
FIG. 2 is a side sectional view showing a state after the substrate supporting part is lifted in the substrate processing apparatus according to the embodiment of the present invention,
FIG. 3 is an enlarged view showing the first substrate supporting part and the first head in FIG. 2,
FIG. 4A and FIG. 4B are views showing a flow path for supplying an inert gas to an inert gas supply section,
FIG. 5 is a plan view showing an inert gas supply ring disposed in the second chamber lid,
FIG. 6 is a sectional view showing a structure of the first inert gas supply ring enlarged in the region "A" in FIG. 3,
FIG. 7 is a side sectional view showing a substrate processing apparatus according to another embodiment, which is a side sectional view of a state where a chamber lid is not opened,
figure 8 is a side sectional view showing a state in which the first chamber cover is opened in figure 7,
fig. 9A and 9B are perspective views of a state where the first chamber cover is opened,
fig. 10 is a side sectional view of a state where the first chamber lid and the second chamber lid are all opened.
(description of reference numerals)
100: chamber
110: first chamber cover
120: second chamber cover
130: chamber body
200: spray head
300: inert gas supply unit
400: substrate support part
500: heat insulation part
1000: substrate processing apparatus
Detailed Description
Hereinafter, the substrate processing apparatus 1000 according to the embodiment of the present invention will be described in detail with reference to the drawings.
Fig. 1 is a side sectional view showing a state where substrate supporting parts 400A and 400B are lowered in a substrate processing apparatus 1000 according to an embodiment of the present invention, and fig. 2 is a side sectional view showing a state where the substrate supporting parts 400A and 400B are raised.
Referring to fig. 1 and 2, the substrate processing apparatus 1000 may include: a chamber 100 including a chamber body 130 and a chamber lid 115 for sealing an upper portion of an opening of the chamber body 130; a plurality of recesses 210A, 210B formed in the chamber lid 115 to be spaced apart from each other by a predetermined distance; a plurality of showerheads 200A, 200B disposed in the recesses 210A, 210B of the chamber lid 115 to supply process gas toward the substrate W; heat insulation portions 500A, 500B extending to surround inner side walls of the recesses 210A, 210B; and one or more substrate support units 400A and 400B which support the substrate W, and are provided to be movable up and down so as to be inserted into the concave portions 210A and 210B, thereby forming a processing space between the heads 200A and 200B and the heat insulating units 500A and 500B.
The chamber 100 provides a processing space inside, in which various processes such as an evaporation process can be performed on the substrate W.
For example, the chamber 100 may include a chamber body 130 having an open upper side and a chamber lid 115 for sealing the upper side of the chamber body 130.
The chamber body 130 may include a gate portion (not shown) for transferring the substrate W in and out. Further, exhaust passages 700A and 700B for exhausting residual gas inside the chamber 100 may be connected to a lower portion of the chamber body 130. Although the exhaust passages 700A and 700B are shown in plural, they may be configured as a single exhaust passage, and the plural exhaust passages 700A and 700B may be combined into two or a single exhaust passage and connected to an exhaust pump.
On the other hand, in the present invention, at least one substrate support part 400A, 400B and showerhead 200A, 200B may be provided inside the chamber 100. Although the present invention is illustrated as including 4 substrate supporting portions 400A, 400B and heads 200A, 200B, the present invention is not limited thereto, and an appropriate number of substrate supporting portions 400A, 400B and heads 200A, 200B may be provided. In addition, when a plurality of substrate supporting units 400A and 400B and heads 200A and 200B are provided, more substrates can be processed at one time, and the production efficiency (throughput) can be improved.
The substrate support portions 400A and 400B are disposed below the chamber body 130 so as to be movable up and down. The substrate support units 400A and 400B are provided with heaters (not shown) and the like, and when a substrate W is placed on the upper surfaces of the substrate support units 400A and 400B, the substrate W can be heated. Further, support rods 410A and 410B extend below the centers of the substrate support portions 400A and 400B, and the substrate support portions 400A and 400B are moved up and down by vertically moving the support rods 410A and 410B.
On the other hand, the chamber lid 115 functions to seal the upper side of the opening of the chamber body 130.
The chamber lid 115 is provided with showerheads 200A and 200B for supplying a process gas to the substrate W.
In the case of the present embodiment, a plurality of recesses 210A, 210B may be disposed at a predetermined distance from each other in the chamber cover 115. For example, in the case where 4 concave portions 210A and 210B are provided, the chamber lid 115 may be arranged in a quadrangular shape. Such an arrangement shape is merely an example, and the arrangement shape of the concave portions 210A and 210B can be appropriately modified. The showerheads 200A and 200B are disposed in the recesses 210A and 210B of the chamber lid 115.
Specifically, the chamber cover 115 may be composed of a first chamber cover 110 and a second chamber cover 120 connected to a lower side of the first chamber cover 110. Also, the first chamber lid 110 and the second chamber lid 120 may be configured to be movable up and down with respect to the chamber body 130.
In this way, if the first chamber lid 110 and the second chamber lid 120 are arranged to be vertically movable, maintenance can be performed by opening only the first chamber lid 110 without opening the entire chamber lid 115 when performing maintenance of the heads 200A, 200B and the like arranged in the chamber lid 115, and maintenance can be performed more conveniently and easily. This will be described in detail later.
On the other hand, when the chamber lid 115 is composed of the first chamber lid 110 and the second chamber lid 120 as described above, an opening may be formed in the second chamber lid 120, and the heads 200A and 200B may be disposed in the opening of the second chamber lid 120.
For example, the first chamber lid 110 may be provided with lid portions 205A, 205B that seal the upper portions of the showerheads 200A, 200B to provide diffusion spaces 216A, 216A into which the process gas is supplied and diffused. That is, when the process gas is supplied to the diffusion spaces 216A and 216A between the caps 205A and 205B and the showerheads 200A and 200B, the process gas may be supplied to the substrate W through the showerheads 200A and 200B. At this time, the diffusion spaces 216A, 216A are provided with the baffle plates 215A, 215B, and diffusion of the process gas can be promoted in the diffusion spaces 216A, 216A.
On the other hand, in order to more efficiently perform a process during the process performed on the substrate W, plasma (plasma) may be used. In this case, RF power may be applied from the RF power supply unit 900 to the heads 200A and 200B, and the substrate support units 400A and 400B may be grounded. Alternatively, although not shown in the drawings, the heads 200A and 200B may be grounded, and the substrate support portions 400A and 400B may be grounded.
When plasma is used as such, it is desirable to insulate the showerhead 200A, 200B from the chamber lid 115. For example, the first chamber lid 110 may be provided with insulating portions 220A and 220B on the lower surface thereof, and the lid portions 205A and 205B may be disposed below the insulating portions 220A and 220B. The heads 200A and 200B are supported by heat insulators 500A and 500B, which will be described later, and the heat insulators 500A and 500B provide not only heat insulation but also an insulating function to insulate the heads 200A and 200B from the second chamber lid 120. The outer surfaces of the caps 205A and 205B and the showerheads 200A and 200B are spaced apart from the first chamber lid 110 and the second chamber lid 120 by insulating spaces 225A and 225B therebetween, and the outer surfaces of the caps 205A and 205B and the showerheads 200A and 200B are insulated from the chamber lid 115.
On the other hand, when arranged as described above, the lower side of the heads 200A and 200B corresponds to the concave portions 210A and 210B. The chamber cover 115 is assembled by coupling the second chamber cover 120 to the lower surface of the first chamber cover 110.
In this way, when the showerheads 200A and 200B are disposed inside the recesses 210A and 210B, interference between the substrate W and the showerheads 200A and 200B can be prevented during transfer of the substrate W inside the chamber 100.
At this time, the inert gas supply unit 300 is disposed along the edges of the concave portions 210A and 210B, and supplies the inert gas downward.
On the other hand, the inert gas supply part 300 may include: a gas block 230 disposed above the chamber lid 115 to provide a flow path for an inert gas to move; and a plurality of inert gas supply rings 300A, 300B, 300C, 300D arranged along edges of the recesses 210A, 210B of the chamber lid 115 and supplied with the inert gas of the gas block 230.
In this case, the gas block 230 may be disposed above the chamber lid 115. Process gases, inert gases, or the like may be supplied to the interior of the chamber 100 through the gas block 230. The flow passages within the gas block 230 connected by the plurality of inert gas supply rings 300A, 300B, 300C, 300D may be symmetrically formed and have the same length. Therefore, the flow passages connected to the plurality of inert gas supply rings 300A, 300B, 300C, and 300D by the gas block 230 can be simplified in structure, and the flow rate supplied to the inert gas supply rings 300A, 300B, 300C, and 300D can be more easily and uniformly adjusted, as compared with the case where the flow passages are formed by using pipes or the like with the same shape and length.
For example, an inert gas supplied from an inert gas supply source (not shown) may be supplied through the first branch flow passage 232 of the gas block 230 and branched into the first connection flow passage 234 and the second connection flow passage 235.
In this case, the first connection flow passage 234 and the first connection flow passage 234 may be connected to the first intermediate flow passage 112A and the second intermediate flow passage 112B formed in the first chamber lid 110, respectively.
In addition, the first intermediate flow passage 112A and the second intermediate flow passage 112B may be connected to the first end flow passage 122A and the second end flow passage 122B formed in the second chamber lid 120, respectively, to supply the inert gas to the inert gas supply part 300.
As described above, if the inert gas is supplied downward from the edges of the concave portions 210A and 210B by the inert gas supply unit 300, the inert gas functions as a gas curtain when the processing is performed inside the concave portions 210A and 210B, thereby having an effect of isolating the concave portions 210A and 210B and an effect of protecting a substrate transfer unit (not shown) disposed at the center of the chamber 100 from the process gas.
On the other hand, fig. 2 shows a case where all the substrates W are placed on the upper surfaces of the substrate support portions 400A and 400B and the substrate support portions 400A and 400B are raised.
As shown in fig. 2, when the substrate supporting part 400A, 400B is raised, the substrate supporting part 400A, 400B may be raised such that the substrate W is completely inserted into the recess 210A, 210B.
In this case, the substrate support portions 400A and 400B may be raised such that the upper surfaces thereof are located at the same height as the lower surface of the second chamber lid 120 or at a higher position than the upper surfaces, and for example, as shown in fig. 2, the substrate support portions 400A and 400B may be completely inserted into the recesses 210A and 210B and raised such that the lower surfaces of the substrate support portions 400A and 400B have a height higher than the lower surface of the second chamber lid 120.
As described above, when the substrate supporting portions 400A and 400B are raised, the substrate supporting portions 400A and 400B form processing spaces with the heat insulating portions 500A and 500B provided on the inner walls of the heads 200A and 200B and the concave portions 210A and 210B. Accordingly, the process gas supplied from the showerhead 200A, 200B is sufficiently supplied toward the substrate W to perform a process on the substrate W.
Further, when the substrate W is inserted into the concave portions 210A and 210B and the processing process is performed, the processing process can be performed smoothly while preventing an influence of a process gas or the like performed on the adjacent substrate W.
On the other hand, when substrate support units 400A and 400B are raised and inserted into recesses 210A and 210B, a space 510 may be formed between the side surface of substrate support units 400A and 400B and heat insulation units 500A and 500B disposed on the inner walls of recesses 210A and 210B.
That is, the substrate supporting part 400A, 400B may have a shape corresponding to the recess 210A, 210B, and have a smaller size to form a spaced space 510 between the side surface of the substrate supporting part 400A, 400B and the heat insulating part 500A, 500B. In the case where substrate supporting parts 400A and 400B and concave parts 210A and 210B have a circular shape, the diameter of substrate supporting parts 400A and 400B may be smaller than the inner diameter of heat insulating parts 500A and 500B.
When the substrate supporting portions 400A and 400B are inserted into the recesses 210A and 210B while being lifted up, the side surfaces of the substrate supporting portions 400A and 400B may interfere with the heat insulating portions 500A and 500B disposed on the inner walls of the recesses 210A and 210B, and may act as a factor of particles. In addition, if the processing space is completely sealed, it may be difficult to supply the process gas to the processing space due to the internal pressure of the processing space.
Therefore, in order to remove the particle factor and smoothly supply the process gas and discharge the residual gas as described above, a separate space 510 is formed between the side surface of the substrate support part 400A or 400B and the heat insulating part 500A or 500B disposed on the inner wall of the recess 210A or 210B.
Fig. 3 is an enlarged view of the first substrate supporting part 400A and the first showerhead 200A in fig. 2.
As shown in fig. 3, when the first substrate supporting part 400A is raised and inserted into the first concave part 210A, the inert gas is supplied through the inert gas supply part 300.
Further, the process gas is supplied from the first showerhead 200A toward the substrate W, and the residual gas is exhausted to the lower side of the first substrate supporting part 400A through the partitioned space 510, and then exhausted to the outside of the chamber 100 through the exhaust flow passages 700A and 700B provided below the chamber main body 130.
On the other hand, referring to fig. 1 and 2 again, the inner walls of the recesses 210A and 210B may be provided with heat insulating portions 500A and 500B for blocking heat transfer as described above. The heat insulating portions 500A and 500B extend as shown in the figure and are disposed so as to surround the inner side walls of the recesses 210A and 210B. That is, the heat insulators 500A and 500B may extend from the lower ends of the shower heads 200A and 200B to the lower end of the second chamber lid 120. Therefore, when the substrate support part 400A, 400B is inserted into the recess 210A, 210B, the heat insulating part 500A, 500B is arranged to surround the substrate support part 400A, 400B.
Therefore, when the substrate W is heated by the substrate support parts 400A and 400B during the process of the substrate W, the heat loss is blocked in the processing space by the heat insulating parts 500A and 500B, and the process can be efficiently performed.
On the other hand, the heat insulating portions 500A and 500B may have an insulating function together with a heat insulating function. That is, the heat insulating parts 500A and 500B may be made of heat insulating and insulating materials. When the RF power is connected to the showerhead 200A, 200B or the showerhead 200A, 200B is grounded as described above, the showerhead 200A, 200B and the second chamber lid 120 may be electrically insulated by the heat insulator 500A, 500B.
On the other hand, the aforementioned partitioned space 510 may be defined as a space between the side surface of the substrate support part 400A, 400B and the inner wall of the heat insulating part 500A, 500B.
In this case, since the diameter or size of the substrate support portions 400A and 400B is determined according to the substrate W, the size of the partitioned space 510 can be adjusted by adjusting the thickness of the heat insulators 500A and 500B.
That is, the width of the partitioned space 510 may be increased by making the thickness of the heat insulating portions 500A and 500B thin, and conversely, the width of the partitioned space 510 may be decreased by making the thickness of the heat insulating portions 500A and 500B thick.
In this case, the amount of gas discharged through the partitioned space 510 may be adjusted by adjusting the thickness of the heat insulating parts 500A, 500B. The heat insulating portions 500A and 500B may be detachably provided on inner side walls of the concave portions 210A and 210B.
As described above, in the present invention, the heat insulating parts 500A and 500B forming the partitioned space 510 are detachably mounted to the chamber lid 115, so that the size or the interval of the partitioned space 510 can be flexibly adjusted according to the process conditions and the substrate vapor deposition rate of the substrate processing apparatus.
On the other hand, fig. 4A and 4B are diagrams illustrating a flow path 600 for supplying the inert gas to the inert gas supply unit 300.
Referring to fig. 1, 4A and 4B, an inert gas supplied from an inert gas supply source (not shown) may be supplied through the supply flow passage 630. At this time, the supply channel 630 may be connected to an RPS (Remote Plasma Source) 610 through the adjustment valve 622 and the additional channel 612. That is, an inert gas or a remote plasma may be supplied through the supply flow path 630 by adjusting the adjustment valve 622.
The supply flow path 630 may be branched according to the number of the heads 200A, 200B or the substrate supporting parts 400A, 400B. For example, in the case where 4 heads 200A and 200B and substrate supporting portions 400A and 400B are provided as in the present embodiment, the supply flow path 630 may be branched into the first branch flow path 232 and the second branch flow path 236, the first branch flow path 232 may be branched into the first connection flow path 234 and the second connection flow path 235, and the second branch flow path 236 may be branched into the third connection flow path 237 and the fourth connection flow path 238.
In this case, the supply flow passage 630 may be branched into the first branch flow passage 232 and the second branch flow passage 236 at the front end of the gas block 230, and the first branch flow passage 232 and the second branch flow passage 236 may be connected to the first connection port 631 and the second connection port 633 of the gas block 230, respectively, and extend toward the inside of the gas block 230. In addition, the first and second connection flow passages 234 and 235, and the third and fourth connection flow passages 237 and 238 may be formed inside the gas block 230.
On the other hand, as described above, the flow passages connected by the plurality of inert gas supply rings 300A, 300B, 300C, 300D in the gas block 230 may be symmetrically formed and have the same length. That is, the first and second connection flow channels 234 and 235 connected to the aforementioned first branch flow channel 232 and the third and fourth connection flow channels 237 and 238 connected to the second branch flow channel 236 may have symmetrical shapes to each other and have the same flow channel length.
In this case, the first and second connection flow passages 234 and 235 may be connected to the first and second intermediate flow passages 112A and 112B formed in the first chamber lid 110, respectively. The first intermediate flow passage 112A and the second intermediate flow passage 112B may be connected to the first end flow passage 122A and the second end flow passage 122B formed in the second chamber lid 120, respectively, to supply an inert gas to the inert gas supply unit 300.
At this time, the inert gas supply part 300 may include inert gas supply rings 300A, 300B disposed along edges of the concave parts 210A, 210B of the chamber lid 115.
Fig. 5 is a plan view illustrating the inert gas supply rings 300A, 300B, 300C, 300D disposed in the second chamber lid 120.
As shown in fig. 5, in the case where 4 recesses 210A, 210B, 210C, 210D are provided, 4 inert gas supply rings 300A, 300B, 300C, 300D may be arranged along the edges of the recesses 210A, 210B, 210C, 210D.
Referring to fig. 1, 4A and 4B, the first end runner 122A and the second end runner 122B may be connected to a first inert gas supply ring 300A and a second inert gas supply ring 300B, respectively.
Similarly, the third connecting flow passage 237 and the fourth connecting flow passage 238 may be connected to a third intermediate flow passage (not shown) and a fourth intermediate flow passage (not shown) formed in the first chamber lid 110, respectively. The third intermediate flow passage and the fourth intermediate flow passage may be connected to a third end flow passage (not shown) and a fourth end flow passage (not shown) formed in the second chamber lid 120, respectively, to supply an inert gas to the third inert gas supply ring 300C (see fig. 5) and the fourth inert gas supply ring 300D (see fig. 5).
On the other hand, the inert gas supply rings 300A, 300B are arranged around the edges of the recesses 210A, 210B as described above. Therefore, when the inert gas is supplied through the inert gas supply rings 300A, 300B, it is necessary to uniformly supply the inert gas over the entire area of the edges of the concave portions 210A, 210B.
Fig. 6 is a sectional view showing an enlarged structure of the first inert gas supply ring 300A.
Referring to fig. 6, the first inert gas supply ring 300A may be formed with a first circulation space 124 in which the inert gas circulates, a second circulation space 310 communicating with the first circulation space 124 through an auxiliary flow passage 126, and an injection part 312 communicating with the second circulation space 310 and supplying the inert gas downward.
That is, the first inert gas supply ring 300A may be provided with at least one circulation space surrounding the recess 210A. Therefore, the inert gas supplied to the circulation space can be uniformly dispersed within the circulation space by diffusion or the like to surround the concave portion 210A.
For example, the inert gas supplied through the first end runner 122A is first supplied to the first circulation space 124. The first circulation space 124 may be defined as a space between the second chamber lid 120 and the first inert gas supply ring 300A as shown.
The first circulation space 124 may be configured to surround the edges of the recesses 210A, 210B. Therefore, the inert gas supplied to the first circulation space 124 is diffused and circulated along the first circulation space 124 to be uniformly dispersed.
Then, the inert gas supplied to the first circulation space 124 is supplied to the second circulation space 310 through the auxiliary flow path 126. The second circulation space 310 is formed adjacent to the concave portions 210A and 210B more than the first circulation space 124, and can improve an air curtain effect when the inert gas is injected through the injection portion 312.
On the other hand, the auxiliary flow passage 126 serves to connect the first circulation space 124 and the second circulation space 310. As shown, the auxiliary flow passage 126 may define a flow passage spaced between the second chamber lid 120 and the first inert gas supply ring 300A.
The inert gas supplied to the second circulation space 310 through the auxiliary flow passage 126 is uniformly dispersed around the concave portions 210A, 210B by being diffused and circulated 2 times in the second circulation space 310.
Next, the inert gas may be injected downward through the injection part 312. In this case, the injection portion 312 may be provided with an expanded pipe portion 314 having a diameter that is widened at a distal end portion to further improve the effect of the air curtain.
On the other hand, fig. 7 is a side sectional view showing a substrate processing apparatus 2000 of another embodiment. In fig. 7, when the chamber lid 2115 is composed of the first chamber lid 2110 and the second chamber lid 2120 which can be moved up and down, a side sectional view showing a state where the chamber lid 2115 is not opened is shown, fig. 8 is a side sectional view showing a state where the first chamber lid 2110 is opened, fig. 9A and 9B are perspective views showing a state where the first chamber lid 2110 is opened, and fig. 10 is a side sectional view showing a state where all of the first chamber lid 2110 and the second chamber lid 2120 are opened.
In fig. 7, 8, and 10, the description of the gas block 2230 and the inert gas supply 2800 is similar to the above-described embodiments, and therefore, a repetitive description thereof will be omitted.
Referring to fig. 7, the chamber lid 2115 may include a first chamber lid 2110 vertically movably provided with respect to the chamber body 2130, and a second chamber lid 2120 vertically movably provided below the first chamber lid 2110 independently with respect to the first chamber lid 2110, as described above.
In this case, an opening may be formed in the second chamber lid 2120, and the showerheads 2200A and 2200B may be disposed in the opening. That is, the showerheads 2200A and 2200B are disposed above the second chamber lid 2120 corresponding to the openings, and the lower portions of the showerheads 2200A and 2200B correspond to the recesses 2210A and 2210B.
In this case, a lid 2300A, 2300B for sealing the space above the showerhead 2200A, 2200B to supply the process gas may be disposed on the first chamber lid 2110.
That is, when the second chamber lid 2120 is coupled to a lower side of the first chamber lid 2110, the lid 2300A, 2300B seals an upper side of the showerhead 2200A, 2200B, and a space to which a process gas is supplied is formed between the lid 2300A, 2300B and the showerhead 2200A, 2200B.
The first chamber lid 2110 may further include baffle plates 2400A and 2400B for dispersing the process gas. The stop plates 2400A, 2400B can be coupled to the first chamber lid 2110 below the cover 2300A, 2300B.
When the second chamber lid 2120 is coupled to the lower side of the first chamber lid 2110, the baffle plates 2400A and 2400B are disposed between the lid 2300A and 2300B and the showerhead 2200A and 2200B, and thus the process gas can be dispersed.
Further, the showerhead 2200A and 2200B may further include insulating portions 2220A and 2220B for insulating the cover 2300A and 2300B from the first chamber lid 2110 when the RF power is applied thereto. The insulating portions 2220A and 2220B may be disposed on the lower surface of the first chamber lid 2110, and the cover portions 2300A and 2300B may be connected to the lower side of the insulating portions 2220A and 2220B.
In addition, the showerheads 2200A, 2200B are supported by thermal insulators 2700A, 2700B, and the insulators 2700A, 2700B provide not only thermal insulation but also an insulating function to insulate the showerheads 2200A, 2200B from the second chamber lid 2120. The outer surfaces of the covers 2300A and 2300B and the showerheads 2200A and 2200B are spaced apart from the first chamber lid 2110 and the second chamber lid 2120 by insulating spaces 2225A and 2225B interposed therebetween, so that the outer surfaces of the covers 2300A and 2300B and the showerheads 2200A and 2200B are insulated from the chamber lid 2115.
Further, the heat insulators 2700A and 2700B are disposed to surround inner sidewalls of the recessed portions 2210A and 2210B, and when the substrate support portions 2600A and 2600B are raised toward the recessed portions 2210A and 2210B, a processing space may be formed between the showerheads 2200A and 2200B, the heat insulators 2700A and 2700B, and the substrate support portions 2600A and 2600B. Here, since the details are described in the foregoing embodiments, the repetitive description is omitted.
On the other hand, the chamber body 2130 may include lift pins 2500A and 2500B for moving the first chamber lid 2110 and the second chamber lid 2120 up and down.
The lift pins 2500A and 2500B are disposed through the chamber body 2130, and are connected to the first chamber lid 2110 and the second chamber lid 2120, respectively, to move the first chamber lid 2110 and the second chamber lid 2120 up and down.
For example, when the lift pins 2500A and 2500B are moved up and down, the first chamber lid 2110 may be moved up and down, and the second chamber lid 2120 and the lift pins 2500A and 2500B may be connected to each other by a regulating portion (not shown) provided in the lift pins 2500A and 2500B, so that the first chamber lid 2110 and the second chamber lid 2120 may be moved up and down together by the up and down movement of the lift pins 2500A and 2500B. The second chamber lid 2120 may be connected to the first chamber lid 2110, and the first chamber lid 2110 and the second chamber lid 2120 may be moved up and down together by the movement of the lift levers 2500A and 2500B.
Fig. 8 is a side sectional view of the first chamber lid 2110 in an opened state, and fig. 9A and 9B are perspective views of the first chamber lid 2110 in an opened state. Fig. 9A and 9B show RPS 2850 and RF match box 2900 disposed above first chamber lid 2110.
In the substrate processing apparatus of the prior art, when the baffle plate or the shower head needs to be maintained, all the chamber covers need to be opened, and then other components need to be sequentially disassembled until the component which needs to be maintained appears. However, various devices for supplying gas, such as various devices of a gas block, RPS, RF match box, etc., are installed above the chamber lid, and the open chamber lid corresponds to a working time and a work largely required by manpower. In addition, when the chamber lid is opened, undesirable damage of components may occur, and an O-ring or the like for sealing the chamber lid may be damaged.
In the substrate processing apparatus 2000 according to the present invention, since the above-described structure is provided, for example, when the operation of the baffle plates 2400A, 2400B, 2400C, 2400D or the showerheads 2200A, 2200B, 2200C, 2200D is required, only the first chamber lid 2110 may be opened as shown in fig. 8, 9A, and 9B, and when the operation of the substrate supporting portions 2600A, 2600B, etc. inside the chamber 100 is required, the inside of the chamber 2100 may be opened by opening all of the first chamber lid 2110 and the second chamber lid 2120.
Referring to fig. 8, 9A and 9B, the state corresponds to a state where only the first chamber lid 2110 is opened in the substrate processing apparatus 2000. In this case, the lift levers 2500A, 2500B, 2500C and 2500D are driven upward to move only the first chamber lid 2110 upward, thereby separating the second chamber lid 2120 and the first chamber lid 2110 from each other.
Accordingly, the showerheads 2200A, 2200B, 2200C, 2200D are exposed above the second chamber lid 2120 as shown in fig. 9A, and the baffles 2400A, 2400B, 2400C, 2400D are exposed below the first chamber lid 2110 as shown in fig. 9B.
That is, when the operation of the shower heads 2200A, 2200B, 2200C, 2200D or the baffle plates 2400A, 2400B, 2400C, 2400D is required, the operation can be easily performed by opening only the first chamber lid 2110.
On the other hand, when the substrate supports 2600A and 2600B and the like in the chamber 100 need to be operated, all of the first chamber lid 2110 and the second chamber lid 2120 are moved upward and opened as shown in fig. 10.
In this case, the substrate support portions 2600A and 2600B inside the chamber 100 are exposed to the outside, and thus the work can be easily performed.
In the present invention, since the first chamber lid 2110 and/or the second chamber lid 2120 are moved up and down along a precise path by the lift rods 2500A, 2500B, 2500C, and 2500D, it is possible to prevent damage to other components such as an O-ring and the like when the first chamber lid 2110 and/or the second chamber lid 2120 are moved up and down.
While the present invention has been described with reference to the preferred embodiments, those skilled in the art will be able to make various modifications and alterations to the present invention without departing from the spirit and scope of the present invention as set forth in the appended claims. Therefore, the technical scope of the present invention should be construed to include all the elements that constitute the claims of the present invention.

Claims (8)

1. A substrate processing apparatus is characterized by comprising:
a chamber including a chamber body and a chamber lid closing an upper side of an opening of the chamber body;
a plurality of recesses formed in the chamber cover to be spaced apart from each other by a predetermined distance;
a plurality of shower heads disposed in a recess of the chamber lid to supply a process gas toward a substrate;
a heat insulating portion extending to surround an inner sidewall of the recess; and
and a substrate support part which supports the substrate and is provided to be movable up and down so as to be inserted into the recess to form a processing space between the substrate support part, the head, and the heat insulating part.
2. The substrate processing apparatus according to claim 1,
when the substrate support portion is raised and inserted into the recess, a space is formed between the side surface of the substrate support portion and the heat insulating portion.
3. The substrate processing apparatus according to claim 1,
the heat insulating part is detachably arranged on the inner side wall of the concave part.
4. The substrate processing apparatus according to claim 1,
the chamber lid is provided with an inert gas supply unit which is disposed along an edge of the recess and supplies an inert gas downward.
5. The substrate processing apparatus according to claim 4,
the inert gas supply section includes:
a gas block disposed above the chamber lid and providing a flow path for moving an inert gas; and
and a plurality of inert gas supply rings disposed along an edge of the recess of the chamber lid and supplied with the inert gas of the gas block.
6. The substrate processing apparatus according to claim 5,
the flow passages connected by the plurality of inert gas supply rings within the gas block are symmetrically formed and have the same length.
7. The substrate processing apparatus according to claim 5,
the inert gas supply ring is provided with a first circulation space in which the inert gas circulates, a second circulation space communicating with the first circulation space through an auxiliary flow path, and an injection part communicating with the second circulation space and supplying the inert gas downward.
8. The substrate processing apparatus according to claim 1,
the chamber lid includes: a first chamber lid disposed to be movable up and down with respect to the chamber body; a second chamber cover which is arranged below the first chamber cover in a vertically movable manner; and a lift rod disposed through the chamber body and connected to the first chamber lid and the second chamber lid to move the first chamber lid and the second chamber lid up and down,
an opening is formed in the second chamber lid, and the shower head is disposed in the opening.
CN202011080302.6A 2019-10-28 2020-10-10 Substrate processing apparatus Active CN112725734B (en)

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JP2008153409A (en) * 2006-12-18 2008-07-03 Taiyo Nippon Sanso Corp Vapor deposition system
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