KR20160081437A - Vertical type chemical vapor deposition device - Google Patents
Vertical type chemical vapor deposition device Download PDFInfo
- Publication number
- KR20160081437A KR20160081437A KR1020140195278A KR20140195278A KR20160081437A KR 20160081437 A KR20160081437 A KR 20160081437A KR 1020140195278 A KR1020140195278 A KR 1020140195278A KR 20140195278 A KR20140195278 A KR 20140195278A KR 20160081437 A KR20160081437 A KR 20160081437A
- Authority
- KR
- South Korea
- Prior art keywords
- processed
- vertical
- exhaust pipe
- bell
- exhaust
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Abstract
The present invention relates to a vertical chemical vapor deposition apparatus, which comprises a bell-shaped processing furnace and a plurality of exhaust ports inserted in an inner central portion of the bell-type processing furnace, the plurality of exhaust ports being formed in vertical and horizontal directions, A plurality of support portions projecting along the circumferential direction of the exhaust pipe to support the object to be processed; an isolation wall protruding along the longitudinal direction of the exhaust pipe to shield both sides of the object to be processed; And a plurality of nozzles provided inside the processing furnace for ejecting the process gas to the object to be treated isolated by the isolation wall and the support. The present invention can improve the uniformity of the thin film deposited on each of the objects to be treated in the bell-mouth treatment furnace by allowing the process gas supplied to each of the object to be processed to be exhausted through the object to be processed arranged in the vertical and horizontal directions There is an effect.
Description
The present invention relates to a vertical chemical vapor deposition apparatus, and more particularly, to a vertical chemical vapor deposition apparatus capable of forming a more uniform thin film.
In general, the vertical chemical vapor deposition apparatus has a structure having a vertical type of deposition furnace (reactor), in which a plurality of substrates or deposition base structures are stacked upward, and a thin film having a desired physical property is supplied to the substrate or base Is a device for depositing on a structure. At this time, the temperature is controlled by an external heater in the reaction furnace.
The deposition furnace of the vertical chemical vapor deposition apparatus includes a nozzle for supplying the reaction gas and a gas discharge pipe for discharging the gas after the reaction to remove the gas.
For example, Japanese Patent Application Laid-Open No. 10-1382375 (vertical CVD apparatus, registered April 1, 2014) includes a process gas passage into which a process gas is injected and a plurality of process gas ejection openings formed along the process gas passage, It can be seen that the gas can be injected to a plurality of objects to be treated, and that the manifold is provided with an exhaust port for discharging the process gas or the like remaining therein.
However, since the process gas is exhausted only from one side, it is difficult to uniformly deposit the thin film. This problem also arises in the case where a plurality of objects to be processed are charged without charging one object to be processed on the same horizontal plane, and if the object is to be exhausted from one side, a uniform thin film is deposited on a plurality of objects positioned on the same plane There was a difficult problem.
SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and it is an object of the present invention to provide a vertical chemical vapor deposition apparatus capable of improving deposition uniformity of a vertical chemical vapor deposition apparatus having a processing furnace for processing a plurality of objects to be processed on the same plane, And a deposition apparatus.
According to an aspect of the present invention, there is provided a bell-shaped processing furnace including a bell-shaped processing furnace and a plurality of exhaust ports inserted in an inner central portion of the bell-type processing furnace, wherein a plurality of exhaust ports are formed in the vertical direction and the horizontal direction, A plurality of supporting portions projecting along the circumferential direction of the exhaust pipe to support the object to be processed; an isolation wall protruding along the longitudinal direction of the exhaust pipe to shield both sides of the object to be processed; And a plurality of nozzles provided inside the processing furnace for ejecting the process gas to the object to be treated isolated by the isolation wall and the support.
The vertical chemical vapor deposition apparatus of the present invention is a vertical chemical vapor deposition apparatus including a vertical processing furnace capable of vertically and horizontally mounting a plurality of objects to be processed and a plurality of exhaust ports in a vertical direction and a horizontal direction, An exhaust pipe for exhausting the exhaust gas to the lower side of the vertical processing furnace, an isolation wall for isolating an object to be treated disposed horizontally from the exhaust pipe, and a process gas The process gas supplied to each of the to-be-treated objects can be exhausted through the object to be processed arranged in the vertical and horizontal directions to deposit the respective objects to be processed in the vertical processing furnace, The uniformity of the thin film can be improved.
1 is a cross-sectional view of a vertical chemical vapor deposition apparatus according to a preferred embodiment of the present invention.
2 is a cross-sectional view taken along the line AA of Fig.
Fig. 3 is a perspective view of the exhaust pipe and the isolation wall in Fig. 1;
Hereinafter, a vertical chemical vapor deposition apparatus of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a cross-sectional view of a vertical chemical vapor deposition apparatus according to a preferred embodiment of the present invention, FIG. 2 is a sectional view taken along line A-A of FIG. 1, and FIG. 3 is a perspective view of an exhaust pipe and an isolation wall in FIG.
1 to 3, a vertical chemical vapor deposition apparatus according to a preferred embodiment of the present invention includes a bell-
Hereinafter, the construction and operation of the vertical chemical vapor deposition apparatus according to the preferred embodiment of the present invention will be described in detail.
First, the bell-
In the
Although FIGS. 1 and 2 illustrate four objects S to be disposed in the horizontal direction, three or two objects to be processed S in the horizontal direction may be charged and arranged as required. The number of the
An exhaust pipe (20) is inserted into the inner center of the vertical treatment furnace (10) from the lower side. The
It is assumed that the number of the
A plurality of
In the present invention, the
The
The object to be treated S is exposed in the direction toward the inner wall of the
Although not shown in the drawings, when the process gas is injected through the
The residue of the process gas is discharged through the exhaust port (21) of the exhaust pipe (20). Therefore, a thin film is deposited on all the objects S by the process gas injected from one
An exhaust pipe (20) protruding from the bottom side of the vertical processing furnace (10) is connected to an exhaust pump and an exhaust fan so as to be capable of forced exhaust.
In the above example, the
It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention will be.
10: bell-shaped processing furnace 20: exhaust pipe
21: exhaust port 30: isolation wall
40: support part 50: nozzle
Claims (3)
An exhaust pipe inserted in an inner central portion of the bell-type treatment furnace and formed with a plurality of exhaust ports in a vertical direction and a horizontal direction, so that gas can be exhausted to the outside through each exhaust port;
A plurality of supporters protruding along the circumferential direction of the exhaust pipe to support the object to be processed;
An isolation wall protruding along the longitudinal direction of the exhaust pipe to shield both sides of the object to be treated; And
And a plurality of nozzles disposed inside the bell-type processing furnace for jetting the process gas into the isolation wall and the object to be processed isolated by the support portion.
The support portion
And supports the whole or a part of the bottom surface of the object to be processed.
The isolation wall
Wherein the exhaust pipe is divided into a plurality of exhaust ports arranged horizontally in the exhaust pipe, and the number of exhaust ports is the same as the number of the exhaust ports.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020140195278A KR20160081437A (en) | 2014-12-31 | 2014-12-31 | Vertical type chemical vapor deposition device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020140195278A KR20160081437A (en) | 2014-12-31 | 2014-12-31 | Vertical type chemical vapor deposition device |
Publications (1)
Publication Number | Publication Date |
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KR20160081437A true KR20160081437A (en) | 2016-07-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020140195278A KR20160081437A (en) | 2014-12-31 | 2014-12-31 | Vertical type chemical vapor deposition device |
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KR (1) | KR20160081437A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102146769B1 (en) * | 2019-12-05 | 2020-08-26 | (주)창성테크 | Internal Pressure Adjustment Device for Carbon Dioxide Deposition Growth by Chemical Vapor Deposition |
-
2014
- 2014-12-31 KR KR1020140195278A patent/KR20160081437A/en active Search and Examination
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102146769B1 (en) * | 2019-12-05 | 2020-08-26 | (주)창성테크 | Internal Pressure Adjustment Device for Carbon Dioxide Deposition Growth by Chemical Vapor Deposition |
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