CN112713138B - Flexible substrate and display panel - Google Patents
Flexible substrate and display panel Download PDFInfo
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- CN112713138B CN112713138B CN202011583929.3A CN202011583929A CN112713138B CN 112713138 B CN112713138 B CN 112713138B CN 202011583929 A CN202011583929 A CN 202011583929A CN 112713138 B CN112713138 B CN 112713138B
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- 239000000758 substrate Substances 0.000 title claims abstract description 187
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 79
- 230000003068 static effect Effects 0.000 claims abstract description 70
- 230000005611 electricity Effects 0.000 claims abstract description 69
- 230000004888 barrier function Effects 0.000 claims abstract description 38
- 230000000903 blocking effect Effects 0.000 claims abstract description 35
- 239000010410 layer Substances 0.000 claims description 181
- 239000000463 material Substances 0.000 claims description 19
- 229910010272 inorganic material Inorganic materials 0.000 claims description 14
- 239000011147 inorganic material Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 13
- 238000012360 testing method Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000012545 processing Methods 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- -1 acryl Chemical group 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The invention provides a flexible substrate and a display panel, wherein the flexible substrate is provided with a display area and a frame area surrounding the display area, and the flexible substrate comprises: a first flexible substrate and a second flexible substrate disposed opposite each other; a first barrier layer disposed between the first flexible substrate and the second flexible substrate; the first amorphous silicon layer is arranged on one side of the second flexible substrate, which is away from the first flexible substrate, and at least covers the display area; and the static electricity treatment structure is arranged on one side of the side wall of the first amorphous silicon layer and is used for blocking static electricity from entering the first amorphous silicon layer or guiding out the static electricity. The static electricity treatment structure is arranged on one side of the side wall of the first amorphous silicon layer, and is used for blocking static electricity during ESD test of the flexible substrate or leading the static electricity out of the flexible substrate, so that the antistatic capacity of the flexible substrate and the display effect of the display device are improved.
Description
Technical Field
The invention relates to the technical field of OLED (organic light emitting diode), in particular to a flexible substrate and a display panel.
Background
The Organic LIGHT EMITTING Diode (OLED) has a wide research and application prospect in the fields of display, light source and the like because of the advantages of low energy consumption, high resolution, high brightness, high luminous efficiency, high response speed, wide viewing angle, no need of a backlight source, low cost, low driving voltage and the like.
However, in the conventional flexible substrate of the OLED, during the ESD (Electro-STATIC DISCHARGE, electrostatic discharge) test, charges cannot be dissipated, so that static electricity is accumulated, and a bright ring appears on the display screen.
Disclosure of Invention
In view of the above, the present invention provides a flexible substrate and a display panel, which have the following technical solutions:
a flexible substrate having a display area and a bezel area surrounding the display area, the flexible substrate comprising:
A first flexible substrate and a second flexible substrate disposed opposite each other;
a first barrier layer disposed between the first flexible substrate and the second flexible substrate;
the first amorphous silicon layer is arranged on one side of the second flexible substrate, which is away from the first flexible substrate, and at least covers the display area;
and the static electricity treatment structure is arranged on one side of the side wall of the first amorphous silicon layer and is used for blocking static electricity from entering the first amorphous silicon layer or guiding out the static electricity.
A display panel comprising the flexible substrate described above.
Compared with the prior art, the invention has the following beneficial effects:
The invention provides a flexible substrate which is provided with a display area and a frame area surrounding the display area, and comprises the following components: a first flexible substrate and a second flexible substrate disposed opposite each other; a first barrier layer disposed between the first flexible substrate and the second flexible substrate; the first amorphous silicon layer is arranged on one side of the second flexible substrate, which is away from the first flexible substrate, and at least covers the display area; and the static electricity treatment structure is arranged on one side of the side wall of the first amorphous silicon layer and is used for blocking static electricity from entering the first amorphous silicon layer or guiding out the static electricity. The static electricity treatment structure is arranged on one side of the side wall of the first amorphous silicon layer, and is used for blocking static electricity during ESD test of the flexible substrate or leading the static electricity out of the flexible substrate, so that the antistatic capacity of the flexible substrate and the display effect of the display device are improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic top view of a flexible substrate according to an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a flexible substrate according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of another flexible substrate according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of yet another flexible substrate according to an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of yet another flexible substrate according to an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of yet another flexible substrate according to an embodiment of the present invention;
FIG. 7 is a schematic cross-sectional view of yet another flexible substrate according to an embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view of yet another flexible substrate according to an embodiment of the present invention;
FIG. 9 is a schematic cross-sectional view of yet another flexible substrate according to an embodiment of the present invention;
FIG. 10 is a schematic cross-sectional view of yet another flexible substrate according to an embodiment of the present invention;
FIG. 11 is a schematic top view of an electrostatic ring structure according to an embodiment of the present invention;
FIG. 12 is a schematic cross-sectional view of yet another flexible substrate provided in accordance with an embodiment of the present invention;
FIG. 13 is a schematic cross-sectional view of yet another flexible substrate according to an embodiment of the present invention;
FIG. 14 is a schematic cross-sectional view of yet another flexible substrate provided in accordance with an embodiment of the present invention;
FIG. 15 is a schematic cross-sectional view of yet another flexible substrate provided in accordance with an embodiment of the present invention;
FIG. 16 is a schematic cross-sectional view of an array layer according to an embodiment of the present invention;
fig. 17 is a schematic structural diagram of a display panel according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
Referring to fig. 1, fig. 1 is a schematic top view of a flexible substrate according to an embodiment of the present invention.
Referring to fig. 2, fig. 2 is a schematic cross-sectional view of a flexible substrate according to an embodiment of the present invention.
The flexible substrate has a display area AA ' and a frame area BB ' surrounding the display area AA '.
It should be noted that, in fig. 2, there are other film layers between the first flexible substrate 11 and the second flexible substrate 12, which are not illustrated herein, and are mainly for simply illustrating the positional relationship between the display area AA 'and the frame area BB'.
Referring to fig. 3, fig. 3 is a schematic cross-sectional view of another flexible substrate according to an embodiment of the present invention.
The flexible substrate includes:
a first flexible substrate 11 and a second flexible substrate 12 disposed opposite to each other.
A first barrier layer 13 disposed between the first flexible substrate 11 and the second flexible substrate 12.
The first amorphous silicon layer 14 is disposed on a side of the second flexible substrate 12 facing away from the first flexible substrate 11, and the first amorphous silicon layer 14 covers at least the display area AA'.
And the static electricity treatment structure 15 is arranged on one side of the side wall of the first amorphous silicon layer 14, and the static electricity treatment structure 15 is used for blocking static electricity from entering the first amorphous silicon layer 14 or guiding out the static electricity.
In this embodiment, the static electricity treatment structure 15 is disposed on one side of the sidewall of the first amorphous silicon layer 14, so as to block static electricity generated during ESD test of the flexible substrate, or conduct the static electricity out of the flexible substrate, thereby improving the antistatic capability of the flexible substrate and the display effect of the display device.
Further, the first amorphous silicon layer 14 is also commonly referred to as an a-Si layer, and is mainly used for improving the electrical properties of the TFT (Thin Film Transistor ) of the device, and the thickness is usually about 50 angstroms, and the specific thickness may be selected according to the practical situation, which is not limited in the embodiment of the present invention.
It should be noted that, in fig. 1, the relative positional relationship of the electrostatic processing structure 15 on the flexible substrate is merely shown by way of example, and the specific structure of the electrostatic processing structure 15 will be described in detail in the following embodiments of the present invention.
Further, according to the above embodiment of the present invention, the material of the electrostatic treatment structure 15 is an inorganic material.
In this embodiment, the inorganic material includes, but is not limited to, silicon dioxide, silicon oxynitride, aluminum oxide, aluminum nitride, or other inorganic material that is not conductive.
Further, according to the above embodiment of the present invention, referring to fig. 4, fig. 4 is a schematic cross-sectional view of still another flexible substrate according to an embodiment of the present invention.
The first barrier layer 13 has a first extension 131 extending in a first direction, and the first extension 131 serves as the electrostatic processing structure.
The first extension 131 covers sidewalls of the second flexible substrate 12 and the first amorphous silicon layer 14.
The first direction is perpendicular to the first flexible substrate 11 and is directed by the first flexible substrate 11 towards the second flexible substrate 12.
In this embodiment, as shown in fig. 4, a specific structure of the electrostatic treating structure is illustrated, where the sidewall of the first barrier layer 13 is extended along the first direction to form a first extension portion 131, and the first extension portion 131 covers the sidewall of the first amorphous silicon layer 14, which is equivalent to a retaining wall structure for blocking static electricity entering the first amorphous silicon layer 14 during ESD test of the flexible substrate, thereby improving the antistatic capability of the flexible substrate and the display effect of the display device.
In addition, the first extension portion 131 also covers the side wall of the second flexible substrate 12, which is equivalent to a protective film layer, so as to further improve the structural stability between the film layers of the flexible substrate.
Further, according to the above embodiment of the present invention, referring to fig. 5, fig. 5 is a schematic cross-sectional view of still another flexible substrate according to an embodiment of the present invention.
The first barrier layer 13 has a first extension 131 extending in a first direction perpendicular to the first flexible substrate 11 and directed by the first flexible substrate 11 towards the second flexible substrate 12.
In the first direction, the thickness of the first extension 131 is the same as the total thickness of the second flexible substrate 12 and the first amorphous silicon layer 14.
The flexible substrate further includes: a first electrostatic barrier layer 16 covering sidewalls of the first amorphous silicon layer 14.
A gap 17 exists between the first electrostatic blocking layer 16 and the first extension 131.
The first extension 131 and the first electrostatic blocking layer 16 together serve as the electrostatic processing structure 15.
In this embodiment, as shown in fig. 5, a specific structure of another electrostatic treatment structure is illustrated, first, the sidewall of the first barrier layer 13 is extended along the first direction to form a first extension portion 131, and a gap exists between the first extension portion 131 and the first amorphous silicon layer 14, and this gap is beneficial to blocking static electricity during ESD test from entering the first amorphous silicon layer 14; next, a first electrostatic blocking layer 16 is disposed to cover the sidewall of the first amorphous silicon layer 14; the barrier structures are equivalent to two barrier structures for blocking static electricity from entering the first amorphous silicon layer 14 during ESD test of the flexible substrate, so that the antistatic capability of the flexible substrate and the display effect of the display device can be further improved.
Further, the gap between the first extension portion 131 and the first static electricity blocking layer 16 can enable static electricity penetrating through the first extension portion 131 to remain in the gap space, so that the static electricity is slowly dissipated, and due to the existence of the first static electricity blocking layer 16, the static electricity can not enter the flexible substrate all the time, and further the display effect of the display device can not be affected.
That is, the electrostatic protection structure achieves triple protection of static electricity through the first extension 131, the first electrostatic blocking layer 16, and a gap space therebetween.
Further, according to the above embodiment of the present invention, the first barrier layer 13 is an inorganic material layer.
In this embodiment, the material of the inorganic material layer includes, but is not limited to, silicon dioxide, silicon oxynitride, aluminum oxide, aluminum nitride, or other inorganic materials without conductivity.
Optionally, the thickness of the first barrier layer 13 between the first flexible substrate 11 and the second flexible substrate 12 is around 5000 angstroms.
It should be noted that the thickness of the first barrier layer 13 between the first flexible substrate 11 and the second flexible substrate 12 may be determined according to practical situations, and is only illustrated by way of example in the embodiment of the present invention.
Optionally, the material of the first electrostatic blocking layer 16 is the same as the material of the first blocking layer 13.
Further, according to the above embodiment of the present invention, referring to fig. 6, fig. 6 is a schematic cross-sectional view of still another flexible substrate according to an embodiment of the present invention.
The flexible substrate further includes:
a second barrier layer 18 disposed on a side of the first amorphous silicon layer 14 facing away from the second flexible substrate 12.
The second barrier layer 18 has a second extension portion 181 extending in a second direction, and the second extension portion 181 serves as the electrostatic processing structure.
The second extension portion 181 covers the sidewall of the first amorphous silicon layer 14.
The second direction is perpendicular to the second flexible substrate 12 and is directed by the second flexible substrate 12 towards the first flexible substrate 11.
In this embodiment, as shown in fig. 6, a specific structure of another electrostatic treating structure is illustrated, where a second extension portion 181 is formed by extending a sidewall of the second barrier layer 18 along the second direction, where the second extension portion 181 covers a sidewall of the first amorphous silicon layer 14, which is equivalent to a retaining wall structure for blocking static electricity entering the first amorphous silicon layer 14 during ESD testing of the flexible substrate, so as to improve the antistatic capability of the flexible substrate and display effect of the display device.
Optionally, the second barrier layer 18 is a layer of inorganic material.
In this embodiment, the material of the inorganic material layer includes, but is not limited to, silicon dioxide, silicon oxynitride, aluminum oxide, aluminum nitride, or other inorganic materials without conductivity.
Optionally, the thickness of the second barrier layer 18 is around 6000 angstroms.
It should be noted that the thickness of the second barrier layer 18 may be determined according to practical situations, and is only illustrated by way of example in the embodiment of the present invention.
Further, according to the above embodiment of the present invention, referring to fig. 7, fig. 7 is a schematic cross-sectional view of still another flexible substrate according to an embodiment of the present invention.
The first amorphous silicon layer 14 includes: a first portion 141 located in the display area AA 'and a second portion 142 located in the bezel area BB'.
The second portion 142 has a plurality of first trenches 19, and the first trenches 19 penetrate through the first amorphous silicon layer 14, so that the second portion 142 forms a plurality of independent strip-shaped retaining wall structures 20.
Wherein a plurality of individual strip-shaped wall structures 20 are used as the electrostatic treating structures.
In this embodiment, as shown in fig. 7, a specific structure of another static electricity treatment structure is illustrated, by setting the first amorphous silicon layer 14 located in the frame area BB ' to be a plurality of independent strip-shaped retaining wall structures 20, static electricity sequentially passes through the plurality of strip-shaped retaining wall structures 20 in the direction of pointing to the display area AA ', and thus the strength of static electricity is gradually weakened, therefore, the number of strip-shaped retaining wall structures 20 is reasonably set, and static electricity can be prevented from entering the first amorphous silicon layer 14 located in the display area AA ', so that the antistatic capability of the flexible substrate and the display effect of the display device are improved.
In addition, the gap between two adjacent strip-shaped retaining wall structures 20 can also enable static electricity to be retained in the gap space, so that the static electricity can be slowly dissipated.
That is, the electrostatic protection structure realizes multiple protection of static electricity through the plurality of strip-shaped retaining wall structures 20 and the gap space between the adjacent two strip-shaped retaining wall structures 20.
In addition, the first amorphous silicon layer 14 positioned in the frame area BB' is directly improved to realize the function of static electricity blocking, the manufacturing procedure is simpler, and the manufacturing process of the flexible substrate is simplified.
Further, according to the above embodiment of the present invention, referring to fig. 8, fig. 8 is a schematic cross-sectional view of still another flexible substrate according to an embodiment of the present invention.
The flexible substrate further includes:
A second barrier layer 18 disposed on a side of the first amorphous silicon layer 14 facing away from the second flexible substrate 12;
The second barrier layer 18 and the first amorphous silicon layer 14 located in the frame region BB' have a plurality of second trenches 21, and the second trenches 21 penetrate through the second barrier layer 18 and the first amorphous silicon layer 14 at the same time, so that the second barrier layer 18 and the first amorphous silicon layer 14 form a plurality of independent strip-shaped retaining wall structures 22 at the same time;
A plurality of individual strip-shaped wall structures 22 serve as the electrostatic treating structures.
In this embodiment, as shown in fig. 8, a specific structure of another static electricity treatment structure is illustrated, by setting the first amorphous silicon layer 14 and the second barrier layer 18 located in the frame area BB 'to be a plurality of independent strip-shaped retaining wall structures 22 at the same time, static electricity sequentially passes through the plurality of strip-shaped retaining wall structures 22 in the direction of the frame area BB' pointing to the display area AA ', and thus the strength of static electricity is gradually weakened, so that the number of strip-shaped retaining wall structures 22 is reasonably set, static electricity can be prevented from entering the first amorphous silicon layer 14 located in the display area AA', and thus the antistatic capability of the flexible substrate and the display effect of the display device are improved.
In addition, the gap between two adjacent strip-shaped retaining wall structures 22 can also enable static electricity to be retained in the gap space, so that the static electricity can be slowly dissipated.
That is, the electrostatic protection structure realizes multiple protection of static electricity through the plurality of strip-shaped retaining wall structures 22 and the gap space between the adjacent two strip-shaped retaining wall structures 22.
In addition, the first amorphous silicon layer 14 and the second barrier layer 18 positioned in the frame area BB' are directly improved to realize the function of static electricity blocking, the manufacturing procedure is simpler, and the manufacturing process of the flexible substrate is simplified.
Further, according to the above embodiment of the present invention, referring to fig. 9, fig. 9 is a schematic cross-sectional view of still another flexible substrate according to an embodiment of the present invention.
The electrostatic handling structure is an electrostatic ring structure 23.
The electrostatic ring structure 23 is electrically connected to the first amorphous silicon layer 14, and is used for conducting out static electricity.
In this embodiment, as shown in fig. 9, a specific structure of still another electrostatic treatment structure is illustrated, the electrostatic ring structure 23 is located between the second barrier layer 18 and the second flexible substrate 12, and by electrically connecting the first amorphous silicon layer 14 and the electrostatic ring structure 23, static electricity during ESD test of the flexible substrate can be conducted out, and static electricity accumulated on the first amorphous silicon layer 14 can also be conducted out, thereby improving antistatic capability of the flexible substrate and display effect of the display device.
Further, according to the above embodiment of the present invention, the electrostatic ring structure 23 is grounded or connected to a low potential signal.
In this embodiment, the electrostatic ring structure 23 conducts static electricity out of the flexible substrate by grounding or by receiving a low potential signal.
The grounding signal line and the low-potential signal line can be original signal lines in the device, and extra wiring arrangement is not needed, so that the wiring process is simplified.
Further, according to the above embodiment of the present invention, referring to fig. 10, fig. 10 is a schematic cross-sectional view of still another flexible substrate according to an embodiment of the present invention.
A gap exists between the electrostatic ring structure 23 and the sidewall of the first amorphous silicon layer 14.
A second electrostatic blocking layer 24 is disposed in the gap and covers the sidewall of the first amorphous silicon layer 14, and the second electrostatic blocking layer 24 is used for blocking static electricity from entering the first amorphous silicon layer 14.
In this embodiment, as shown in fig. 10, a specific structure of still another electrostatic treatment structure is illustrated, and as shown in fig. 9 and 10, a gap exists between the electrostatic ring structure 23 and the sidewall of the first amorphous silicon layer 14, and further, a second electrostatic blocking layer 24 covering the sidewall of the first amorphous silicon layer 14 is disposed in the gap to block the static electricity from entering the first amorphous silicon layer 14.
That is, the electrostatic protection structure has the capability of blocking and guiding out static electricity, so that double protection of static electricity is realized, and further the antistatic capability of the flexible substrate and the display effect of the display device can be further improved.
Optionally, the material of the second electrostatic blocking layer 24 is the same as the material of the second blocking layer 18.
Further, according to the above embodiment of the present invention, referring to fig. 11, fig. 11 is a schematic top view of an electrostatic ring structure according to an embodiment of the present invention.
The electrostatic ring structure 23 is a special-shaped structure having a plurality of sharp corners.
In this embodiment, in combination with the discharge capability of the tip discharge, the capability of the electrostatic ring structure to conduct out static electricity is improved by arranging the electrostatic ring structure 23 to be a shaped structure having a plurality of sharp corners.
Optionally, the angle of the sharp corner is greater than 0 ° and less than or equal to 180 °.
For example, the angle of the sharp angle is 60 ° or 90 ° or 115 ° or the like.
Further, according to the above embodiment of the present invention, referring to fig. 12, fig. 12 is a schematic cross-sectional view of still another flexible substrate according to an embodiment of the present invention.
The flexible substrate further includes:
a second amorphous silicon layer 25 disposed between the first barrier layer 13 and the second flexible substrate 12.
In this embodiment, the second amorphous silicon layer 25 is also commonly referred to as an a-Si layer, which is mainly used to improve the electrical properties of the TFT (Thin Film Transistor ) of the device, and the thickness is typically about 30 angstroms, and the specific thickness may be selected according to the practical situation, and is not limited in the embodiment of the present invention.
Further, according to the above embodiment of the present invention, referring to fig. 13, fig. 13 is a schematic cross-sectional view of still another flexible substrate according to an embodiment of the present invention.
The electrostatic treating structure 15 is simultaneously extended on one side of the sidewall of the second amorphous silicon layer 25.
In this embodiment, since static electricity during ESD testing of the flexible substrate also easily flows into the second amorphous silicon layer 25, the static electricity treatment structure 15 is simultaneously extended on one side of the sidewall of the second amorphous silicon layer 25, and simultaneously static electricity is also protected on the second amorphous silicon layer 25, so that the antistatic capability of the flexible substrate and the display effect of the display device can be further improved.
Further, according to the above embodiment of the present invention, referring to fig. 14, fig. 14 is a schematic cross-sectional view of still another flexible substrate according to an embodiment of the present invention.
The flexible substrate further includes:
A buffer layer 26 disposed on a side of the second flexible substrate 12 facing away from the first flexible substrate 11.
The buffer layer 26 is located on a side of the second barrier layer 18 facing away from the second flexible substrate 12.
In this embodiment, the buffer layer 26 includes, but is not limited to, an inorganic material layer or an organic material layer, wherein the material of the inorganic material layer includes, but is not limited to, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride, aluminum oxide, aluminum nitride, or the like, and the material of the organic material layer includes, but is not limited to, acryl, PI, or the like.
In the embodiment of the present invention, the buffer layer 26 is illustrated by taking an inorganic material layer as an example.
Further, according to the above embodiment of the present invention, referring to fig. 15, fig. 15 is a schematic cross-sectional view of still another flexible substrate according to an embodiment of the present invention.
The flexible substrate further includes:
An array layer 27 disposed on a side of the buffer layer 26 facing away from the first flexible substrate 11.
Referring to fig. 16, fig. 16 is a schematic cross-sectional view of an array layer according to an embodiment of the present invention.
The array layer 27 includes a plurality of thin film transistors 28 arranged in an array.
The thin film transistor 28 includes: an active layer 281, a gate electrode 282, a source electrode 283 and a drain electrode 284, the source electrode 283 and the drain electrode 284 being located on the same layer.
The array layer 27 further includes: a gate insulating layer 29 disposed between the active layer 281 and the gate electrode 282.
An interlayer insulating layer 30 disposed between the gate electrode 282 and the source electrode 283 and the drain electrode 284.
The passivation layer 31 is disposed on a side of the source electrode 283 and the drain electrode 284 facing away from the interlayer insulating layer 30.
The planarization layer 32 is disposed on a side of the passivation layer 31 facing away from the interlayer insulating layer 30.
It should be noted that only one thin film transistor 28 is illustrated in the embodiment of the present invention.
Further, according to the above embodiment of the present invention, the first flexible substrate 11 and the second flexible substrate 12 are made of the same material and are PI material layers.
In this embodiment, the first flexible substrate 11 and the second flexible substrate 12 are flexible substrates of flexible insulating materials, and have characteristics of being stretchable, bendable, or bendable, and the materials thereof include, but are not limited to, polyimide materials (PI) or polycarbonate materials (PC) or polyethylene terephthalate materials (PET).
In the embodiment of the present invention, a PI material layer is taken as an example for illustration.
Optionally, the thickness of the first flexible substrate 11 is about 9um, and the thickness of the second flexible substrate 12 is about 6 um.
Further, according to all the above embodiments of the present invention, referring to fig. 17, fig. 17 is a schematic structural diagram of a display panel according to an embodiment of the present invention.
The display panel 33 includes the flexible substrate described in the above embodiments.
In this embodiment, the display panel 33 has the characteristics of the flexible substrate due to the flexible substrate according to the above embodiment of the present invention, so that the display effect of the display panel can be improved.
The flexible substrate and the display panel provided by the invention are described in detail, and specific examples are applied to illustrate the principles and the implementation of the invention, and the description of the above examples is only used for helping to understand the method and the core idea of the invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
It should be noted that, in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described as different from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
It is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include, or is intended to include, elements inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (18)
1. A flexible substrate having a display area and a bezel area surrounding the display area, the flexible substrate comprising:
A first flexible substrate and a second flexible substrate disposed opposite each other;
a first barrier layer disposed between the first flexible substrate and the second flexible substrate;
the first amorphous silicon layer is arranged on one side of the second flexible substrate, which is away from the first flexible substrate, and at least covers the display area;
The static electricity treatment structure is arranged on one side of the side wall of the first amorphous silicon layer and is used for blocking static electricity from entering the first amorphous silicon layer or guiding out the static electricity;
the flexible substrate further includes:
A second amorphous silicon layer disposed between the first barrier layer and the second flexible substrate;
the static electricity treatment structure is simultaneously arranged on one side of the side wall of the second amorphous silicon layer in an extending mode.
2. The flexible substrate of claim 1, wherein the material of the electrostatically processed structure is an inorganic material.
3. The flexible substrate of claim 1, wherein the first barrier layer has a first extension extending in a first direction, the first extension acting as the electrostatically processed structure;
The first extension part covers the second flexible substrate and the side wall of the first amorphous silicon layer;
the first direction is perpendicular to the first flexible substrate and is directed by the first flexible substrate toward the second flexible substrate.
4. The flexible substrate of claim 1, wherein the first barrier layer has a first extension extending in a first direction, the first direction being perpendicular to the first flexible substrate and directed by the first flexible substrate toward the second flexible substrate;
In the first direction, the thickness of the first extension is the same as the total thickness of the second flexible substrate and the first amorphous silicon layer;
The flexible substrate further includes: a first electrostatic blocking layer covering the side wall of the first amorphous silicon layer;
A gap exists between the first electrostatic blocking layer and the first extension portion;
the first extension and the first electrostatic blocking layer together function as the electrostatic handling structure.
5. The flexible substrate of claim 1, wherein the flexible substrate further comprises:
The second blocking layer is arranged on one side of the first amorphous silicon layer, which is away from the second flexible substrate;
the second barrier layer is provided with a second extension part extending along a second direction, and the second extension part is used as the electrostatic treatment structure;
the second extension part covers the side wall of the first amorphous silicon layer;
The second direction is perpendicular to the second flexible substrate and is directed by the second flexible substrate toward the first flexible substrate.
6. The flexible substrate of claim 1, wherein the first amorphous silicon layer comprises: a first portion located in the display area and a second portion located in the bezel area;
The second part is provided with a plurality of first grooves which penetrate through the first amorphous silicon layer so that the second part forms a plurality of independent strip-shaped retaining wall structures;
Wherein a plurality of independent strip-shaped retaining wall structures are used as the static electricity treatment structures.
7. The flexible substrate of claim 1, wherein the flexible substrate further comprises:
The second blocking layer is arranged on one side of the first amorphous silicon layer, which is away from the second flexible substrate;
The second barrier layer and the first amorphous silicon layer which are positioned in the frame area are provided with a plurality of second grooves, and the second grooves penetrate through the second barrier layer and the first amorphous silicon layer at the same time, so that a plurality of independent strip-shaped retaining wall structures are formed at the same time by the second barrier layer and the first amorphous silicon layer;
a plurality of independent strip-shaped retaining wall structures are used as the static electricity treatment structures.
8. The flexible substrate of claim 1, wherein the electrostatic handling structure is an electrostatic ring structure;
the electrostatic ring structure is in conductive connection with the first amorphous silicon layer and is used for leading out static electricity.
9. The flexible substrate of claim 8, wherein the electrostatic ring structure is grounded or connected to a low potential signal.
10. The flexible substrate of claim 8, wherein a gap exists between the electrostatic ring structure and a sidewall of the first amorphous silicon layer;
and a second static blocking layer covering the side wall of the first amorphous silicon layer is arranged in the gap and used for blocking static electricity from entering the first amorphous silicon layer.
11. The flexible substrate of claim 8, wherein the electrostatic ring structure is a contoured structure having a plurality of sharp corners.
12. The flexible substrate of claim 11, wherein the sharp angle is greater than 0 ° and less than or equal to 180 °.
13. The flexible substrate of claim 1, wherein the flexible substrate further comprises:
and the buffer layer is arranged on one side of the second flexible substrate, which is away from the first flexible substrate.
14. The flexible substrate of claim 13, wherein the buffer layer is of SiO or SiN.
15. The flexible substrate of claim 13, wherein the flexible substrate further comprises:
the array layer is arranged on one side of the buffer layer, which is away from the first flexible substrate; the array layer comprises a plurality of thin film transistors arranged in an array manner;
the thin film transistor includes: the active layer, the grid electrode, the source electrode and the drain electrode are positioned on the same layer;
the array layer further includes: a gate insulating layer disposed between the active layer and the gate electrode;
An interlayer insulating layer disposed between the gate electrode and the source and drain electrodes;
The passivation layer is arranged on one side of the source electrode and the drain electrode, which is away from the interlayer insulating layer;
and the planarization layer is arranged on one side of the passivation layer, which is away from the interlayer insulating layer.
16. The flexible substrate of claim 1, wherein the first flexible substrate and the second flexible substrate are the same material and are PI material layers.
17. The flexible substrate of claim 1, wherein the first barrier layer is a layer of inorganic material.
18. A display panel comprising the flexible substrate of any one of claims 1-17.
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Address after: 201201 No. 3809, Lingkong North Road, Pudong New Area, Shanghai Applicant after: SHANGHAI TIANMA AM-OLED Co.,Ltd. Address before: Room 509, building 1, No. 6111, Longdong Avenue, Pudong New Area, Shanghai, 201201 Applicant before: SHANGHAI TIANMA AM-OLED Co.,Ltd. |
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