CN112713138A - Flexible substrate and display panel - Google Patents
Flexible substrate and display panel Download PDFInfo
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- CN112713138A CN112713138A CN202011583929.3A CN202011583929A CN112713138A CN 112713138 A CN112713138 A CN 112713138A CN 202011583929 A CN202011583929 A CN 202011583929A CN 112713138 A CN112713138 A CN 112713138A
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- 239000000758 substrate Substances 0.000 title claims abstract description 183
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 79
- 230000003068 static effect Effects 0.000 claims abstract description 59
- 230000005611 electricity Effects 0.000 claims abstract description 47
- 230000004888 barrier function Effects 0.000 claims abstract description 45
- 238000012545 processing Methods 0.000 claims abstract description 30
- 239000010410 layer Substances 0.000 claims description 181
- 230000000903 blocking effect Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 18
- 229910010272 inorganic material Inorganic materials 0.000 claims description 14
- 239000011147 inorganic material Substances 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 15
- 238000012360 testing method Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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Abstract
The invention provides a flexible substrate and a display panel, wherein the flexible substrate is provided with a display area and a frame area surrounding the display area, and the flexible substrate comprises: a first flexible substrate and a second flexible substrate which are oppositely arranged; a first barrier layer disposed between the first flexible substrate and the second flexible substrate; the first amorphous silicon layer is arranged on one side, away from the first flexible substrate, of the second flexible substrate, and at least covers the display area; the electrostatic processing structure is arranged on one side of the side wall of the first amorphous silicon layer and used for preventing static electricity from entering the first amorphous silicon layer or leading the static electricity out. This flexible substrate sets up static processing structure through one side at first amorphous silicon layer lateral wall for static when blockking flexible substrate ESD test, perhaps derive flexible substrate with this static, and then improve flexible substrate's antistatic effect, and display device's display effect.
Description
Technical Field
The invention relates to the technical field of OLED, in particular to a flexible substrate and a display panel.
Background
Organic Light Emitting devices (OLEDs for short) have a wide research and application prospect in the fields of displays, Light sources, and the like due to their advantages of low energy consumption, high resolution, high brightness, high Light Emitting efficiency, fast response speed, wide viewing angle, no need of backlight, low cost, low driving voltage, and the like.
However, when an ESD (Electro-Static Discharge) test is performed on a flexible substrate of an OLED at present, charges cannot be dissipated, so that Static electricity is accumulated, and a bright ring appears on a display screen.
Disclosure of Invention
In view of the above, to solve the above problems, the present invention provides a flexible substrate and a display panel, and the technical solution is as follows:
a flexible substrate having a display area and a bezel area surrounding the display area, the flexible substrate comprising:
a first flexible substrate and a second flexible substrate which are oppositely arranged;
a first barrier layer disposed between the first flexible substrate and the second flexible substrate;
the first amorphous silicon layer is arranged on one side, away from the first flexible substrate, of the second flexible substrate, and at least covers the display area;
the electrostatic processing structure is arranged on one side of the side wall of the first amorphous silicon layer and used for preventing static electricity from entering the first amorphous silicon layer or leading the static electricity out.
A display panel comprises the flexible substrate.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a flexible substrate which is provided with a display area and a frame area surrounding the display area, and comprises: a first flexible substrate and a second flexible substrate which are oppositely arranged; a first barrier layer disposed between the first flexible substrate and the second flexible substrate; the first amorphous silicon layer is arranged on one side, away from the first flexible substrate, of the second flexible substrate, and at least covers the display area; the electrostatic processing structure is arranged on one side of the side wall of the first amorphous silicon layer and used for preventing static electricity from entering the first amorphous silicon layer or leading the static electricity out. This flexible substrate sets up static processing structure through one side at first amorphous silicon layer lateral wall for static when blockking flexible substrate ESD test, perhaps derive flexible substrate with this static, and then improve flexible substrate's antistatic effect, and display device's display effect.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic top view of a flexible substrate according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of a flexible substrate according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of another flexible substrate provided by an embodiment of the invention;
FIG. 4 is a schematic cross-sectional view of another flexible substrate provided in accordance with an embodiment of the present invention;
FIG. 5 is a schematic cross-sectional view of another flexible substrate according to an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of another flexible substrate provided in accordance with an embodiment of the present invention;
FIG. 7 is a schematic cross-sectional view of another flexible substrate according to an embodiment of the present invention;
FIG. 8 is a schematic cross-sectional view of another flexible substrate provided in accordance with an embodiment of the present invention;
fig. 9 is a schematic cross-sectional view of another flexible substrate according to an embodiment of the invention;
FIG. 10 is a schematic cross-sectional view of another flexible substrate provided in accordance with an embodiment of the present invention;
fig. 11 is a schematic top view of an electrostatic ring structure according to an embodiment of the present invention;
FIG. 12 is a schematic cross-sectional view of another flexible substrate provided in accordance with an embodiment of the present invention;
FIG. 13 is a schematic cross-sectional view of another flexible substrate provided in accordance with an embodiment of the present invention;
fig. 14 is a schematic cross-sectional view of another flexible substrate according to an embodiment of the invention;
FIG. 15 is a schematic cross-sectional view of another flexible substrate provided in accordance with an embodiment of the present invention;
FIG. 16 is a schematic cross-sectional view of an array layer according to an embodiment of the present invention;
fig. 17 is a schematic structural diagram of a display panel according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.
Referring to fig. 1, fig. 1 is a schematic top view of a flexible substrate according to an embodiment of the present invention.
Referring to fig. 2, fig. 2 is a schematic cross-sectional view of a flexible substrate according to an embodiment of the present invention.
The flexible substrate has a display area AA ' and a bezel area BB ' surrounding the display area AA '.
It should be noted that in fig. 2, other film layers exist between the first flexible substrate 11 and the second flexible substrate 12, which are not illustrated here, and are mainly used to simply illustrate the positional relationship between the display area AA 'and the frame area BB'.
Referring to fig. 3, fig. 3 is a schematic cross-sectional view of another flexible substrate according to an embodiment of the present invention.
The flexible substrate includes:
a first flexible substrate 11 and a second flexible substrate 12 disposed opposite to each other.
A first barrier layer 13 disposed between the first flexible substrate 11 and the second flexible substrate 12.
A first amorphous silicon layer 14 disposed on a side of the second flexible substrate 12 facing away from the first flexible substrate 11, wherein the first amorphous silicon layer 14 covers at least the display area AA'.
And the electrostatic processing structure 15 is arranged on one side of the side wall of the first amorphous silicon layer 14, and the electrostatic processing structure 15 is used for blocking static electricity from entering the first amorphous silicon layer 14 or leading the static electricity out.
In this embodiment, the electrostatic processing structure 15 is disposed on one side of the sidewall of the first amorphous silicon layer 14, so as to block static electricity during an ESD test of the flexible substrate or guide the static electricity out of the flexible substrate, thereby improving the antistatic capability of the flexible substrate and the display effect of the display device.
Further, the first amorphous silicon layer 14 is also commonly referred to as an a-Si layer, and is mainly used to improve the electrical property of a Thin Film Transistor (TFT), and the thickness is usually about 50 angstroms, and the specific thickness can be selected according to practical situations, which is not limited in the embodiments of the present invention.
It should be noted that the electrostatic processing structure 15 has many structure types, and in fig. 1, the relative position relationship of the electrostatic processing structure 15 on the flexible substrate is shown by way of example only, and the specific structure of the electrostatic processing structure 15 will be described in detail in the following embodiments of the present invention.
Further, according to the above embodiment of the present invention, the material of the electrostatic processing structure 15 is an inorganic material.
In this embodiment, the inorganic material includes, but is not limited to, silicon dioxide, silicon oxynitride, aluminum oxide, aluminum nitride, or other inorganic material that does not have electrical conductivity.
Further, based on the above embodiments of the present invention, referring to fig. 4, fig. 4 is a schematic cross-sectional view of another flexible substrate provided in the embodiments of the present invention.
The first barrier layer 13 has a first extension portion 131 extending in a first direction, and the first extension portion 131 serves as the electrostatic processing structure.
The first extension portion 131 covers sidewalls of the second flexible substrate 12 and the first amorphous silicon layer 14.
The first direction is perpendicular to the first flexible substrate 11 and is directed from the first flexible substrate 11 to the second flexible substrate 12.
In this embodiment, as shown in fig. 4, a specific structure of the electrostatic processing structure is illustrated, a first extending portion 131 is formed by extending the sidewall of the first barrier layer 13 along the first direction, the first extending portion 131 covers the sidewall of the first amorphous silicon layer 14, and is equivalent to a retaining wall structure for blocking static electricity generated during an ESD test of the flexible substrate from entering the first amorphous silicon layer 14, so as to improve the antistatic capability of the flexible substrate and the display effect of the display device.
Moreover, the first extending portion 131 also covers the sidewall of the second flexible substrate 12, which is equivalent to a protective film layer, thereby further improving the structural stability between the flexible substrate film layers.
Further, based on the above embodiments of the present invention, referring to fig. 5, fig. 5 is a schematic cross-sectional view of another flexible substrate provided in the embodiments of the present invention.
The first barrier layer 13 has a first extension 131 extending along a first direction perpendicular to the first flexible substrate 11 and directed from the first flexible substrate 11 to the second flexible substrate 12.
In the first direction, the thickness of the first extension portion 131 is the same as the total thickness of the second flexible substrate 12 and the first amorphous silicon layer 14.
The flexible substrate further includes: a first electrostatic barrier layer 16 covering the sidewalls of the first amorphous silicon layer 14.
A gap 17 exists between the first electrostatic blocking layer 16 and the first extension 131.
The first extension 131 and the first electrostatic blocking layer 16 together serve as the electrostatic processing structure 15.
In this embodiment, as shown in fig. 5, another specific structure of the electrostatic processing structure is illustrated, first, the sidewall of the first barrier layer 13 is extended along the first direction to form a first extension portion 131, and a gap exists between the first extension portion 131 and the first amorphous silicon layer 14, and the gap is favorable for blocking static electricity during the ESD test from entering the first amorphous silicon layer 14; secondly, a first static barrier layer 16 covering the side wall of the first amorphous silicon layer 14 is arranged; two barrier structures are formed to block static electricity from entering the first amorphous silicon layer 14 during the ESD test of the flexible substrate, so that the antistatic capability of the flexible substrate and the display effect of the display device can be further improved.
Further, the gap between the first extending portion 131 and the first static electricity blocking layer 16 can also make the static electricity penetrating through the first extending portion 131 stay in the gap space, so that the static electricity is slowly dissipated, and the static electricity cannot enter the flexible substrate all the time due to the existence of the first static electricity blocking layer 16, so that the display effect of the display device cannot be influenced.
That is, the electrostatic protection structure realizes triple protection of static electricity through the first extension portion 131, the first electrostatic blocking layer 16 and the gap space therebetween.
Further, according to the above embodiment of the present invention, the first barrier layer 13 is an inorganic material layer.
In this embodiment, the material of the inorganic material layer includes, but is not limited to, silicon dioxide, silicon oxynitride, aluminum oxide, aluminum nitride, or other inorganic material having no conductivity.
Optionally, the thickness of the first barrier layer 13 between the first flexible substrate 11 and the second flexible substrate 12 is about 5000 angstroms.
It should be noted that the thickness of the first barrier layer 13 between the first flexible substrate 11 and the second flexible substrate 12 may be determined according to actual situations, and is only illustrated by way of example in the embodiment of the present invention.
Optionally, the material of the first electrostatic barrier layer 16 is the same as the material of the first barrier layer 13.
Further, based on the above embodiments of the present invention, referring to fig. 6, fig. 6 is a schematic cross-sectional view of another flexible substrate provided in the embodiments of the present invention.
The flexible substrate further includes:
a second barrier layer 18 disposed on a side of the first amorphous silicon layer 14 facing away from the second flexible substrate 12.
The second barrier layer 18 has a second extension portion 181 extending in a second direction, and the second extension portion 181 serves as the electrostatic treatment structure.
The second extension portion 181 covers a sidewall of the first amorphous silicon layer 14.
The second direction is perpendicular to the second flexible substrate 12 and is directed from the second flexible substrate 12 to the first flexible substrate 11.
In this embodiment, as shown in fig. 6, a specific structure of another electrostatic processing structure is illustrated, a second extending portion 181 is formed by extending the sidewall of the second barrier layer 18 along the second direction, and the second extending portion 181 covers the sidewall of the first amorphous silicon layer 14, which is equivalent to a retaining wall structure for blocking static electricity generated during an ESD test on the flexible substrate from entering the first amorphous silicon layer 14, so as to improve the antistatic capability of the flexible substrate and the display effect of the display device.
Optionally, the second barrier layer 18 is an inorganic material layer.
In this embodiment, the material of the inorganic material layer includes, but is not limited to, silicon dioxide, silicon oxynitride, aluminum oxide, aluminum nitride, or other inorganic material having no conductivity.
Optionally, the thickness of the second barrier layer 18 is about 6000 angstroms.
It should be noted that the thickness of the second barrier layer 18 may be determined according to actual situations, and is only illustrated by way of example in the embodiment of the present invention.
Further, based on the above embodiments of the present invention, referring to fig. 7, fig. 7 is a schematic cross-sectional view of another flexible substrate provided in the embodiments of the present invention.
The first amorphous silicon layer 14 includes: a first portion 141 located in the display area AA 'and a second portion 142 located in the bezel area BB'.
The second portion 142 has a plurality of first trenches 19, and the first trenches 19 penetrate the first amorphous silicon layer 14, so that the second portion 142 forms a plurality of independent strip-shaped retaining wall structures 20.
Wherein, a plurality of independent strip-shaped retaining wall structures 20 are used as the electrostatic processing structure.
In this embodiment, as shown in fig. 7, a specific structure of another electrostatic processing structure is illustrated, by setting the first amorphous silicon layer 14 located in the frame area BB 'to be a plurality of independent strip-shaped retaining wall structures 20, in a direction in which the frame area BB' points to the display area AA ', static electricity will sequentially pass through the plurality of strip-shaped retaining wall structures 20, and further the intensity of the static electricity will be gradually weakened, so that, by reasonably setting the number of strip-shaped retaining wall structures 20, static electricity can be prevented from entering the first amorphous silicon layer 14 located in the display area AA', and further the antistatic capability of the flexible substrate and the display effect of the display device can be improved.
Moreover, the gap between two adjacent strip-shaped retaining wall structures 20 can also make static electricity stay in the gap space, so that the static electricity is slowly dissipated.
That is, the electrostatic protection structure realizes multiple electrostatic protection through the gap space between the strip-shaped retaining wall structures 20 and two adjacent strip-shaped retaining wall structures 20.
In addition, the first amorphous silicon layer 14 located in the frame area BB' is directly improved to realize the function of electrostatic blocking, the manufacturing process is relatively simple, and the manufacturing process of the flexible substrate is simplified.
Further, based on the above embodiments of the present invention, referring to fig. 8, fig. 8 is a schematic cross-sectional view of another flexible substrate provided in the embodiments of the present invention.
The flexible substrate further includes:
a second barrier layer 18 disposed on a side of the first amorphous silicon layer 14 facing away from the second flexible substrate 12;
the second barrier layer 18 and the first amorphous silicon layer 14 located in the frame area BB' have a plurality of second trenches 21, and the second trenches 21 simultaneously penetrate through the second barrier layer 18 and the first amorphous silicon layer 14, so that the second barrier layer 18 and the first amorphous silicon layer 14 simultaneously form a plurality of independent strip-shaped retaining wall structures 22;
a plurality of independent strip-shaped retaining wall structures 22 are used as the electrostatic processing structure.
In this embodiment, as shown in fig. 8, a specific structure of another electrostatic processing structure is illustrated, in which the first amorphous silicon layer 14 and the second barrier layer 18 located in the frame area BB 'are simultaneously configured as a plurality of independent strip-shaped retaining wall structures 22, and in a direction that the frame area BB' points to the display area AA ', static electricity sequentially passes through the plurality of strip-shaped retaining wall structures 22, so as to gradually weaken the intensity of the static electricity, therefore, by reasonably setting the number of the strip-shaped retaining wall structures 22, static electricity can be prevented from entering the first amorphous silicon layer 14 located in the display area AA', and the antistatic capability of the flexible substrate and the display effect of the display device can be further improved.
Moreover, the gap between two adjacent strip-shaped retaining wall structures 22 can also make static electricity stay in the gap space, so that the static electricity is slowly dissipated.
That is, the electrostatic protection structure realizes multiple electrostatic protection through the gap space between the strip-shaped retaining wall structures 22 and two adjacent strip-shaped retaining wall structures 22.
In addition, the first amorphous silicon layer 14 and the second barrier layer 18 in the frame area BB' are directly improved to realize the function of electrostatic blocking, the manufacturing process is relatively simple, and the manufacturing process of the flexible substrate is simplified.
Further, based on the above embodiments of the present invention, referring to fig. 9, fig. 9 is a schematic cross-sectional view of another flexible substrate provided in the embodiments of the present invention.
The electrostatic processing structure is an electrostatic ring structure 23.
The electrostatic ring structure 23 is electrically connected to the first amorphous silicon layer 14 for conducting static electricity away.
In this embodiment, as shown in fig. 9, a specific structure of another electrostatic processing structure is illustrated, the electrostatic ring structure 23 is located between the second barrier layer 18 and the second flexible substrate 12, and by electrically connecting the first amorphous silicon layer 14 and the electrostatic ring structure 23, static electricity generated during an ESD test on the flexible substrate can be conducted out, and static electricity accumulated on the first amorphous silicon layer 14 can be conducted out, so as to improve the antistatic capability of the flexible substrate and the display effect of the display device.
Further, according to the above embodiment of the present invention, the electrostatic ring structure 23 is connected to ground or a low potential signal.
In this embodiment, the electrostatic ring structure 23 conducts static electricity out of the flexible substrate by grounding or low-potential signal connection.
The grounding signal line and the low potential signal line can be original signal lines in the device, and extra wiring is not needed, so that the wiring process is simplified.
Further, based on the above embodiments of the present invention, referring to fig. 10, fig. 10 is a schematic cross-sectional view of another flexible substrate provided in the embodiments of the present invention.
A gap exists between the electrostatic ring structure 23 and the sidewall of the first amorphous silicon layer 14.
A second static blocking layer 24 covering the side wall of the first amorphous silicon layer 14 is arranged in the gap, and the second static blocking layer 24 is used for blocking static electricity from entering the first amorphous silicon layer 14.
In this embodiment, as shown in fig. 10, a specific structure of another electrostatic processing structure is illustrated, and as shown in fig. 9 and 10, a gap exists between the electrostatic ring structure 23 and the sidewall of the first amorphous silicon layer 14, and a second electrostatic blocking layer 24 is further disposed in the gap to cover the sidewall of the first amorphous silicon layer 14, so as to block static electricity from entering the first amorphous silicon layer 14.
That is to say, the electrostatic protection structure has the ability of blocking static electricity and leading out static electricity at the same time, and realizes double protection of static electricity, so that the antistatic ability of the flexible substrate and the display effect of the display device can be further improved.
Optionally, the material of the second electrostatic barrier layer 24 is the same as the material of the second barrier layer 18.
Further, based on the above embodiments of the present invention, referring to fig. 11, fig. 11 is a schematic top view of an electrostatic ring structure according to an embodiment of the present invention.
The electrostatic ring structure 23 is a special-shaped structure with a plurality of sharp corners.
In this embodiment, in combination with the discharge capability of the tip discharge, the electrostatic ring structure 23 is configured to have a special-shaped structure with a plurality of sharp corners, so as to improve the electrostatic discharge capability of the electrostatic ring structure.
Optionally, the angle of the sharp angle is greater than 0 ° and less than or equal to 180 °.
For example, the angle of the sharp corner is 60 ° or 90 ° or 115 ° or the like.
Further, based on the above embodiments of the present invention, referring to fig. 12, fig. 12 is a schematic cross-sectional view of another flexible substrate according to an embodiment of the present invention.
The flexible substrate further includes:
a second amorphous silicon layer 25 disposed between the first barrier layer 13 and the second flexible substrate 12.
In this embodiment, the second amorphous silicon layer 25 is also commonly referred to as an a-Si layer, and is mainly used to improve the electrical property of a Thin Film Transistor (TFT), and the thickness is usually about 30 angstroms, and the specific thickness can be selected according to practical situations, which is not limited in the embodiments of the present invention.
Further, based on the above embodiments of the present invention, referring to fig. 13, fig. 13 is a schematic cross-sectional view of another flexible substrate provided in the embodiments of the present invention.
The electrostatic processing structure 15 is also extended and disposed on the side wall of the second amorphous silicon layer 25.
In this embodiment, since the static electricity generated during the ESD test of the flexible substrate can easily flow into the second amorphous silicon layer 25, the static electricity processing structure 15 is simultaneously extended to one side of the sidewall of the second amorphous silicon layer 25, and the second amorphous silicon layer 25 is also subjected to the static electricity protection, so as to further improve the antistatic performance of the flexible substrate and the display effect of the display device.
Further, based on the above embodiments of the present invention, referring to fig. 14, fig. 14 is a schematic cross-sectional view of another flexible substrate provided in the embodiments of the present invention.
The flexible substrate further includes:
a buffer layer 26 disposed on a side of the second flexible substrate 12 facing away from the first flexible substrate 11.
Note that the buffer layer 26 is located on a side of the second barrier layer 18 facing away from the second flexible substrate 12.
In this embodiment, the buffer layer 26 includes, but is not limited to, an inorganic material layer or an organic material layer, wherein the inorganic material layer includes, but is not limited to, silicon oxide (SiO), silicon nitride (SiN), silicon oxynitride, aluminum oxide or aluminum nitride (ain), and the organic material layer includes, but is not limited to, acrylic or PI.
In the embodiment of the present invention, the buffer layer 26 is illustrated by taking an inorganic material layer as an example.
Further, based on the above embodiments of the present invention, referring to fig. 15, fig. 15 is a schematic cross-sectional view of another flexible substrate according to an embodiment of the present invention.
The flexible substrate further includes:
an array layer 27 arranged on a side of said buffer layer 26 facing away from said first flexible substrate 11.
Referring to fig. 16, fig. 16 is a schematic cross-sectional view of an array layer according to an embodiment of the present invention.
The array layer 27 includes a plurality of thin film transistors 28 arranged in an array.
The thin film transistor 28 includes: an active layer 281, a gate electrode 282, a source electrode 283 and a drain electrode 284, wherein the source electrode 283 and the drain electrode 284 are positioned at the same layer.
The array layer 27 further includes: a gate insulating layer 29 disposed between the active layer 281 and the gate electrode 282.
An interlayer insulating layer 30 disposed between the gate electrode 282 and the source and drain electrodes 283 and 284.
The passivation layer 31 is disposed on a side of the source electrode 283 and the drain electrode 284 facing away from the interlayer insulating layer 30.
The planarization layer 32 is disposed on a side of the passivation layer 31 facing away from the interlayer insulating layer 30.
In the embodiment of the present invention, only one thin film transistor 28 is used as an example for description.
Further, according to the above embodiment of the present invention, the material of the first flexible substrate 11 and the material of the second flexible substrate 12 are the same, and are PI material layers.
In this embodiment, the first flexible substrate 11 and the second flexible substrate 12 are flexible substrates made of flexible insulating materials, and have properties of being stretchable, bendable, or bendable, and the materials include, but are not limited to, polyimide materials (PI), polycarbonate materials (PC), polyethylene terephthalate materials (PET), and the like.
In the embodiment of the present invention, a PI material layer is taken as an example for description.
Optionally, the thickness of the first flexible substrate 11 is about 9um, and the thickness of the second flexible substrate 12 is about 6 um.
Further, based on all the above embodiments of the present invention, referring to fig. 17, fig. 17 is a schematic structural diagram of a display panel according to an embodiment of the present invention.
The display panel 33 includes the flexible substrate described in the above embodiment.
In this embodiment, the display panel 33 has the characteristics of the flexible substrate due to the adoption of the flexible substrate according to the above embodiment of the present invention, so that the display effect of the display panel can be improved.
The flexible substrate and the display panel provided by the present invention are described in detail above, and the principle and the embodiment of the present invention are explained herein by applying specific examples, and the description of the above examples is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is further noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include or include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (20)
1. A flexible substrate having a display area and a bezel area surrounding the display area, the flexible substrate comprising:
a first flexible substrate and a second flexible substrate which are oppositely arranged;
a first barrier layer disposed between the first flexible substrate and the second flexible substrate;
the first amorphous silicon layer is arranged on one side, away from the first flexible substrate, of the second flexible substrate, and at least covers the display area;
the electrostatic processing structure is arranged on one side of the side wall of the first amorphous silicon layer and used for preventing static electricity from entering the first amorphous silicon layer or leading the static electricity out.
2. The flexible substrate of claim 1, wherein the material of the electrostatically processed structure is an inorganic material.
3. The flexible substrate of claim 1, wherein the first barrier layer has a first extension extending in a first direction, the first extension acting as the electrostatic processing structure;
the first extension part covers the second flexible substrate and the side wall of the first amorphous silicon layer;
the first direction is perpendicular to the first flexible substrate and is directed from the first flexible substrate to the second flexible substrate.
4. The flexible substrate of claim 1, wherein the first barrier layer has a first extension extending in a first direction, the first direction being perpendicular to the first flexible base and directed from the first flexible base to the second flexible base;
in the first direction, the thickness of the first extension part is the same as the total thickness of the second flexible substrate and the first amorphous silicon layer;
the flexible substrate further includes: a first static barrier layer covering the side wall of the first amorphous silicon layer;
a gap exists between the first electrostatic blocking layer and the first extension portion;
the first extension and the first electrostatic blocking layer collectively function as the electrostatic processing structure.
5. The flexible substrate of claim 1, further comprising:
the second barrier layer is arranged on one side, away from the second flexible substrate, of the first amorphous silicon layer;
the second barrier layer is provided with a second extension part extending along a second direction, and the second extension part is used as the electrostatic processing structure;
the second extension part covers the side wall of the first amorphous silicon layer;
the second direction is perpendicular to the second flexible substrate and is directed by the second flexible substrate toward the first flexible substrate.
6. The flexible substrate of claim 1, wherein the first amorphous silicon layer comprises: a first portion located in the display area and a second portion located in the border area;
the second part is provided with a plurality of first grooves, and the first grooves penetrate through the first amorphous silicon layer so that a plurality of independent strip-shaped retaining wall structures are formed on the second part;
and a plurality of independent strip-shaped retaining wall structures are used as the electrostatic treatment structures.
7. The flexible substrate of claim 1, further comprising:
the second barrier layer is arranged on one side, away from the second flexible substrate, of the first amorphous silicon layer;
the second barrier layer and the first amorphous silicon layer which are positioned in the frame area are provided with a plurality of second grooves, and the second grooves simultaneously penetrate through the second barrier layer and the first amorphous silicon layer so as to enable the second barrier layer and the first amorphous silicon layer to simultaneously form a plurality of independent strip-shaped retaining wall structures;
and a plurality of independent strip-shaped retaining wall structures are used as the electrostatic treatment structures.
8. The flexible substrate of claim 1, wherein the electrostatic handling structure is an electrostatic ring structure;
the static ring structure is in conductive connection with the first amorphous silicon layer and used for leading out static electricity.
9. The flexible substrate of claim 8, wherein the electrostatic ring structure is connected to ground or a low potential signal.
10. The flexible substrate of claim 8, wherein a gap exists between the electrostatic ring structure and a sidewall of the first amorphous silicon layer;
and a second static blocking layer covering the side wall of the first amorphous silicon layer is arranged in the gap and used for blocking static electricity from entering the first amorphous silicon layer.
11. The flexible substrate of claim 8, wherein the electrostatic ring structure is a shaped structure having a plurality of sharp corners.
12. The flexible substrate of claim 11, wherein the angle of the sharp angle is greater than 0 ° and less than or equal to 180 °.
13. The flexible substrate of claim 1, further comprising:
a second amorphous silicon layer disposed between the first barrier layer and the second flexible substrate.
14. The flexible substrate of claim 13, wherein the electrostatic treatment structure is simultaneously disposed extending on a side of a sidewall of the second amorphous silicon layer.
15. The flexible substrate of claim 1, further comprising:
and the buffer layer is arranged on one side of the second flexible substrate, which faces away from the first flexible substrate.
16. The flexible substrate of claim 15, wherein the buffer layer is made of SiO or SiN.
17. The flexible substrate of claim 15, further comprising:
the array layer is arranged on one side, away from the first flexible substrate, of the buffer layer; the array layer comprises a plurality of thin film transistors arranged in an array;
the thin film transistor includes: the transistor comprises an active layer, a grid electrode, a source electrode and a drain electrode, wherein the source electrode and the drain electrode are positioned on the same layer;
the array layer further includes: a gate insulating layer disposed between the active layer and the gate electrode;
an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes;
the passivation layer is arranged on one side, away from the interlayer insulating layer, of the source electrode and the drain electrode;
the planarization layer is arranged on one side, away from the interlayer insulating layer, of the passivation layer.
18. The flexible substrate of claim 1, wherein the first flexible substrate and the second flexible substrate are made of the same material and are PI material layers.
19. The flexible substrate of claim 1, wherein the first barrier layer is an inorganic material layer.
20. A display panel comprising the flexible substrate according to any one of claims 1 to 19.
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Address after: 201201 No. 3809, Lingkong North Road, Pudong New Area, Shanghai Applicant after: SHANGHAI TIANMA AM-OLED Co.,Ltd. Address before: Room 509, building 1, No. 6111, Longdong Avenue, Pudong New Area, Shanghai, 201201 Applicant before: SHANGHAI TIANMA AM-OLED Co.,Ltd. |
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