CN112701210A - Method and device for automatically repairing chip - Google Patents
Method and device for automatically repairing chip Download PDFInfo
- Publication number
- CN112701210A CN112701210A CN202011591293.7A CN202011591293A CN112701210A CN 112701210 A CN112701210 A CN 112701210A CN 202011591293 A CN202011591293 A CN 202011591293A CN 112701210 A CN112701210 A CN 112701210A
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- current
- voltage
- chip
- power supply
- adjustable power
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- 238000000034 method Methods 0.000 title claims abstract description 19
- 230000008439 repair process Effects 0.000 claims abstract description 27
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- 230000015556 catabolic process Effects 0.000 claims description 7
- 238000010586 diagram Methods 0.000 description 7
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000010892 electric spark Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention discloses a method and a device for automatically repairing a chip, wherein the repairing method comprises the following steps: step 1: marking and processing pins of the chip; step 2: the chip is connected with the ammeter in series and is connected with an adjustable power supply; and step 3: the microcontroller is connected with the adjustable power supply and the ammeter; and 4, step 4: the microcontroller sends a control command to the adjustable power supply, and the voltage and the direction of the adjustable power supply are set to be working voltages which are in sine or cosine periodic change; and 5: judging whether the current of the current circuit is normal or not, if the current is not normal, applying a repair voltage, and then repeatedly executing the step 4-5; if the current is normal, executing step 6; step 6: the repair voltage is maintained for a certain time. The apparatus, comprising: the microcontroller is used for setting the voltage and the current of the adjustable power supply; the current meter is used for sending the current magnitude and direction of the current circuit to the microcontroller; and the adjustable power supply receives a control command sent by the microcontroller and adjusts the voltage and the direction.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to a method and a device for automatically repairing a chip.
Background
In the field of chip manufacturing, very fine gold/copper wires are generally used as bonding wires for connecting the chip internal circuits with package pins before chip packaging. The bonding wire of the chip is usually only about 20 microns in diameter, and its thickness is one tenth of that of human hair, which is a very fragile part of the chip. The wire bonding can be fused instantly due to overhigh temperature of the working environment of the chip, unstable working voltage or electrostatic impact, so that the whole chip can not work normally. Taking the most common LED luminary chips as an example, more than 90% of the LED luminary chips are damaged due to the fusing of bonding wires.
Disclosure of Invention
The present invention is directed to a method and an apparatus for automatically repairing a chip.
A method for automatically repairing a chip comprises the following steps:
step 1: marking and processing pins of the chip with the wire bonding fusing;
step 2: the chip is connected with the ammeter in series and is connected with an adjustable power supply;
and step 3: the microcontroller is connected with the adjustable power supply and the ammeter;
and 4, step 4: the microcontroller sends a control command to the adjustable power supply, and the voltage and the direction of the adjustable power supply are set to be working voltages which are in sine or cosine periodic change;
and 5: judging whether the current of the current circuit is normal, if not, applying a repairing voltage which periodically changes in sine or cosine, and then repeatedly executing the step 4-5; if the current is normal, executing step 6;
step 6: maintaining the repair voltage for a certain time to strengthen the connection strength of the bonding wire repair point.
The step 1 comprises the following steps:
step 11: connecting the pins which are not subjected to bonding wire fusing together through a wire to serve as a pin, and defining the pin as a combined pin;
step 12: and defining the pin with the wire bonding fusing as the fusing pin.
Preferably, the working voltage in step 4 is low-voltage and low-current alternating current, the low voltage is rated working voltage of the chip, and the low current is rated working current of the chip.
Preferably, the repair voltage in step 5 is an alternating current with high voltage and small current, and the high voltage must be higher than the reverse breakdown voltage of all PN junctions in the chip, and must be higher than the breakdown voltage of the bond wire fusing gap.
An apparatus for automatically repairing a chip, comprising:
the microcontroller is connected with the adjustable power supply and the ammeter, sends a control command, sets the voltage and the current of the adjustable power supply, and simultaneously obtains the current in the current circuit through the ammeter;
the ammeter is connected with the chip and the adjustable power supply in series and sends the current magnitude and direction of the current circuit to the microcontroller;
the adjustable power supply is connected with the chip and the ammeter in series, receives a control command sent by the microcontroller from a serial port, adjusts the voltage and the direction, and can limit the current in the circuit.
The invention has the beneficial effects that: the problem that the chip can only be discarded once damaged is solved, and a large number of damaged chips can be regenerated. Greatly reduces the economic loss caused by the damage and the abandonment of the chip and the consumption of manpower, financial resources and material resources caused by the repeated production of the chip, and simultaneously avoids the additional environmental pollution.
Drawings
FIG. 1 is a flow chart of the operation of the present invention.
Fig. 2 is a schematic diagram of a chip pin connection line according to the present invention.
Fig. 3 is a schematic circuit diagram.
Fig. 4 is a hardware block diagram.
Fig. 5 is an alternating current waveform.
FIG. 6 is a schematic diagram of a blown bond wire.
Fig. 7 is a schematic diagram of a bonding line in a repair process.
Fig. 8 is a schematic diagram of a bond line after repair is completed.
In the figure: 1-fusing pin, 2-merging pin, 3-bonding wire fused chip, 4-ammeter, 5-adjustable power supply, 6-first fusing point, 7-second fusing point and 8-electric spark.
Detailed Description
The invention will be further explained with reference to the drawings.
As shown in fig. 1, a method for automatically repairing a chip includes the following steps:
step 1: marking and processing pins of the chip with the wire bonding fusing;
step 2: the chip is connected with the ammeter in series and is connected with an adjustable power supply;
and step 3: the microcontroller is connected with the adjustable power supply and the ammeter;
and 4, step 4: the microcontroller sends a control command to the adjustable power supply, and the voltage and the direction of the adjustable power supply are set to be working voltages which are in sine or cosine periodic change;
and 5: judging whether the current of the current circuit is normal, if not, applying a repairing voltage which periodically changes in sine or cosine, and then repeatedly executing the step 4-5; if the current is normal, executing step 6;
step 6: maintaining the repair voltage for a certain time to strengthen the connection strength of the bonding wire repair point.
The step 1 comprises the following steps:
step 11: connecting the pins which are not subjected to bonding wire fusing together through a wire to serve as a pin, and defining the pin as a combined pin;
step 12: and defining the pin with the wire bonding fusing as the fusing pin.
It should be understood that the working voltage in step 4 is low-voltage and low-current alternating current, the low voltage is the rated working voltage of the chip, and the low current is the rated working current of the chip; the voltage waveform of the alternating current recommends a sine wave, and the frequency recommends a value of 100 Hz.
It should be noted that the criterion of whether the circuit current is normal in step 5 is whether the current is greater than zero, and if the current is greater than zero, it indicates that the current is normal, and at this time, the blown bonding wire has been reconnected; if the current is zero, the current is abnormal, and the blown bonding wire is not reconnected.
It should be understood that the repair voltage in step 5 is an alternating current with high voltage and small current, and the high voltage must be higher than the reverse breakdown voltage of all PN junctions in the chip, and must be higher than the breakdown voltage of the bond wire fusing gap; but the voltage value is not too high so as to prevent the permanent damage of the internal circuit of the chip caused by an excessively strong electric field; the voltage value is recommended to be 100V, and the voltage value adopted in the specific implementation needs to be adjusted according to the type and the production process of the chip; the voltage waveform of the alternating current is recommended to be a sine wave, and the frequency recommended to be 100 Hz.
It should be noted that the time for applying the repair voltage once is recommended to be not shorter than 5 seconds.
It should be noted that, the repair voltage is maintained for a certain time in step 6 to strengthen the connection strength of the bonding wire repair point, the recommended duration is 3 minutes, and the duration in the specific implementation needs to be determined according to the material and diameter of the bonding wire.
It should be noted that the ac voltage refers to an effective voltage of the ac, and the effective voltage V isrmsAnd peak voltage VpkThe relationship of (a) is as follows:
it should be noted that the ac current refers to the effective current of the ac, and the effective current IrmsAnd peak current IpkThe relationship of (a) is as follows:
as shown in fig. 2, before repairing a chip with wire bonding fusing, a pin with wire bonding fusing needs to be defined as a "fusing pin" first, and the remaining pins without wire bonding fusing are all connected together by a wire to serve as a pin, which is defined as a "merged pin".
It should be noted that the chip has only two pins, and thus the current operation is not required; if there are three or more pins in the chip, all normal pins need to be merged.
As shown in fig. 3, the component 3 is a chip with wire bonding fusing, and its left and right ends are respectively the fusing pin and merging pin (without distinguishing polarities), and there is usually a gap of about 20 μm at the wire bonding fusing inside; the component 4 is an ammeter and can acquire the current magnitude and direction in the current circuit under the control of the microcontroller; the component 5 is an adjustable power supply, can change the magnitude and direction of voltage in real time under the control of a microcontroller, and can limit the magnitude of current in a circuit.
As shown in fig. 4, both the adjustable power supply and the current meter are directly connected to the microcontroller. On one hand, the microcontroller can send a control command through a corresponding interface (usually a serial port), set the voltage and the direction of the adjustable power supply, and limit the maximum current in the circuit by setting the upper limit value and the lower limit value of the current; on the other hand, the microcontroller may also obtain the current magnitude and direction in the current circuit from the current meter through a corresponding interface (usually a serial port).
It should be noted that, the microcontroller stores a control program, and it can automatically complete the chip repairing process according to the setting of the program.
Fig. 5 is an alternating current waveform.
As shown in fig. 6, after the chip bond wire is melted, a gap of about 20 μm is formed at the melted portion.
As shown in fig. 7, when a repair voltage is applied between the fuse pin and the merge pin of the chip, air in the fuse gap is broken down by a high voltage strong electric field to generate a minute electric spark; the tiny electric sparks cause tiny local melting on the surface of the melting point, and the melted gold/copper is close to the melting point at the other end under the action of the strong electric field. In the process, the two melting points are gradually thinned and lengthened, continuously extend towards each other and finally are completely contacted together.
Fig. 8 is a schematic diagram of a bond line after repair is completed.
The embodiment takes an LED light emitting chip as an example, and describes how to integrate the technical solution of the present invention into a device and try to repair the light emitting chip when the LED light emitting chip is damaged.
In order to provide the device with the ability to automatically attempt to repair the LED emitter chip when the LED emitter chip is damaged, the microcontroller, the adjustable power supply, and the current meter of fig. 4 should be integrated into the device, and the circuit connection relationship between the LED emitter chip, the current meter, and the adjustable power supply is shown in fig. 3.
When the equipment is started and the hardware exception is alarmed, the equipment can carry out self-checking on all hardware once. In the hardware self-checking process, if the LED light chip is found to be out of order, an automatic repair program in the microcontroller may be automatically started, and the repair process is as shown in fig. 1.
In the process of repairing the LED light emitting chip, since the rated operating voltage of the LED light emitting chip is 2.2V, the operating voltage shown in fig. 1 is set to 2.2V (the operating voltage varies due to the different light emitting colors of the LEDs); since the reverse breakdown voltage of the LED luminary chip is typically tens of volts and the bond wire fusing gap is typically around 20 microns, we select 100V ac voltage as the repair voltage and set the ac frequency to 100 Hz.
In the above process, no matter the operating voltage or the repair voltage is applied, the current value in the circuit needs to be limited to be less than or equal to the rated operating current of 20mA (the operating current varies with different LED light emitting powers) in the whole process.
When the bonding wire in the LED chip is fused, a fusing gap of about 20 μm is formed between two fusing points, as shown in fig. 6.
When the auto-repair program in the microcontroller proceeds to step 4 in fig. 1, an attempt is made to turn on the bond wire in the chip. Immediately next, step 5 in fig. 1 is executed, and the microcontroller will obtain the current magnitude in the current circuit through the current meter. And if the current in the current circuit is zero, indicating that the bond wire in the chip is in a disconnected state, applying a repair voltage to repair the fusing gap of the bond wire. After repairing the bond wire fusing gap for 5 seconds, the process returns to step 4 in FIG. 1 to continue. If the current level in the present circuit is greater than zero, it indicates that the bond wire in the chip has been reconnected, and step 6 in FIG. 1 should be performed. I.e., the bond repair site is consolidated by maintaining the repair voltage, which takes about 3 minutes.
Claims (5)
1. A method for automatically repairing a chip is characterized by comprising the following steps:
step 1: marking and processing pins of the chip with the wire bonding fusing;
step 2: the chip is connected with the ammeter in series and is connected with an adjustable power supply;
and step 3: the microcontroller is connected with the adjustable power supply and the ammeter;
and 4, step 4: the microcontroller sends a control command to the adjustable power supply, and the voltage and the direction of the adjustable power supply are set to be working voltages which are in sine or cosine periodic change;
and 5: judging whether the current of the current circuit is normal, if not, applying a repairing voltage which periodically changes in sine or cosine, and then repeatedly executing the step 4-5; if the current is normal, executing step 6;
step 6: maintaining the repair voltage for a certain time to strengthen the connection strength of the bonding wire repair point.
2. The method for automatically repairing chips as claimed in claim 1, wherein said step 1 comprises the steps of:
step 11: connecting the pins which are not subjected to bonding wire fusing together through a wire to serve as a pin, and defining the pin as a combined pin;
step 12: and defining the pin with the wire bonding fusing as the fusing pin.
3. The method for automatically repairing chips as claimed in claim 1, wherein the operation voltage in step 4 is a low-voltage and low-current alternating current, the low voltage is the rated operation voltage of the chip, and the low current is the rated operation current of the chip.
4. The method for automatically repairing chips as claimed in claim 1, wherein the repairing voltage in step 5 is a high-voltage low-current alternating current, and the high voltage must be higher than the reverse breakdown voltage of all PN junctions in the chip and must be higher than the breakdown voltage of bond wire fusing gaps.
5. An apparatus for automatically repairing a chip, comprising:
the microcontroller is connected with the adjustable power supply and the ammeter, sends a control command, sets the voltage and the current of the adjustable power supply, and simultaneously obtains the current in the current circuit through the ammeter;
the ammeter is connected with the chip and the adjustable power supply in series and sends the current magnitude and direction of the current circuit to the microcontroller;
the adjustable power supply is connected with the chip and the ammeter in series, receives a control command sent by the microcontroller, adjusts the voltage and the direction, and can limit the current in the circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011591293.7A CN112701210B (en) | 2020-12-29 | 2020-12-29 | Method and device for automatically repairing chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011591293.7A CN112701210B (en) | 2020-12-29 | 2020-12-29 | Method and device for automatically repairing chip |
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| Publication Number | Publication Date |
|---|---|
| CN112701210A true CN112701210A (en) | 2021-04-23 |
| CN112701210B CN112701210B (en) | 2022-03-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202011591293.7A Active CN112701210B (en) | 2020-12-29 | 2020-12-29 | Method and device for automatically repairing chip |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1834674A (en) * | 2005-03-18 | 2006-09-20 | 安捷伦科技有限公司 | Method and apparatus for a reliability testing |
| CN101201388A (en) * | 2006-12-13 | 2008-06-18 | 株式会社瑞萨科技 | Method of on-chip current measurement and semiconductor ic |
| CN101404305A (en) * | 2008-11-05 | 2009-04-08 | 深圳市大族激光科技股份有限公司 | Thin-film solar cell chip renovation method and device |
| US20120146521A1 (en) * | 2010-12-10 | 2012-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for Driving Light-Emitting Element and Method for Driving Light-Emitting Device |
| CN103779251A (en) * | 2014-01-07 | 2014-05-07 | 上海众人网络安全技术有限公司 | COB binding line test method |
| CN106653642A (en) * | 2017-02-15 | 2017-05-10 | 扬州扬杰电子科技股份有限公司 | Test system and test method for testing forward and reverse conversion capability of photovoltaic bypass diode |
| CN206490046U (en) * | 2017-02-15 | 2017-09-12 | 扬州扬杰电子科技股份有限公司 | The system for testing the forward and reverse transfer capability of photovoltaic bypass diode |
-
2020
- 2020-12-29 CN CN202011591293.7A patent/CN112701210B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1834674A (en) * | 2005-03-18 | 2006-09-20 | 安捷伦科技有限公司 | Method and apparatus for a reliability testing |
| CN101201388A (en) * | 2006-12-13 | 2008-06-18 | 株式会社瑞萨科技 | Method of on-chip current measurement and semiconductor ic |
| CN101404305A (en) * | 2008-11-05 | 2009-04-08 | 深圳市大族激光科技股份有限公司 | Thin-film solar cell chip renovation method and device |
| US20120146521A1 (en) * | 2010-12-10 | 2012-06-14 | Semiconductor Energy Laboratory Co., Ltd. | Method for Driving Light-Emitting Element and Method for Driving Light-Emitting Device |
| CN103779251A (en) * | 2014-01-07 | 2014-05-07 | 上海众人网络安全技术有限公司 | COB binding line test method |
| CN106653642A (en) * | 2017-02-15 | 2017-05-10 | 扬州扬杰电子科技股份有限公司 | Test system and test method for testing forward and reverse conversion capability of photovoltaic bypass diode |
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| CN112701210B (en) | 2022-03-11 |
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