CN112701210B - Method and device for automatically repairing chip - Google Patents
Method and device for automatically repairing chip Download PDFInfo
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- CN112701210B CN112701210B CN202011591293.7A CN202011591293A CN112701210B CN 112701210 B CN112701210 B CN 112701210B CN 202011591293 A CN202011591293 A CN 202011591293A CN 112701210 B CN112701210 B CN 112701210B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The invention discloses a method and a device for automatically repairing a chip, wherein the repairing method comprises the following steps: step 1: marking and processing pins of the chip; step 2: the chip is connected with the ammeter in series and is connected with an adjustable power supply; and step 3: the microcontroller is connected with the adjustable power supply and the ammeter; and 4, step 4: the microcontroller sends a control command to the adjustable power supply, and the voltage and the direction of the adjustable power supply are set to be working voltages which are in sine or cosine periodic change; and 5: judging whether the current of the current circuit is normal or not, if the current is not normal, applying a repair voltage, and then repeatedly executing the step 4-5; if the current is normal, executing step 6; step 6: the repair voltage is maintained for a certain time. The apparatus, comprising: the microcontroller is used for setting the voltage and the current of the adjustable power supply; the current meter is used for sending the current magnitude and direction of the current circuit to the microcontroller; and the adjustable power supply receives a control command sent by the microcontroller and adjusts the voltage and the direction.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to a method and a device for automatically repairing a chip.
Background
In the field of chip manufacturing, very fine gold/copper wires are generally used as bonding wires for connecting the chip internal circuits with package pins before chip packaging. The binding wire of the chip is usually only about 20 microns in diameter, is one-tenth as thick as human hair, and is a very fragile part in the chip. The chip working environment temperature is too high, the working voltage is unstable or the static electricity is impacted, and the binding wire can be fused instantly, so that the whole chip can not work normally. Taking the most common LED luminary chip as an example, more than 90% of the LED luminary chips are damaged due to the fusing of the binding wires.
Disclosure of Invention
The present invention is directed to a method and an apparatus for automatically repairing a chip.
A method for automatically repairing a chip comprises the following steps:
step 1: marking and processing pins of the chip with the fusing of the binding wires;
step 2: the chip is connected with the ammeter in series and is connected with an adjustable power supply;
and step 3: the microcontroller is connected with the adjustable power supply and the ammeter;
and 4, step 4: the microcontroller sends a control command to the adjustable power supply, and the voltage and the direction of the adjustable power supply are set to be working voltages which are in sine or cosine periodic change;
and 5: judging whether the current of the current circuit is normal, if not, applying a repairing voltage which periodically changes in sine or cosine, and then repeatedly executing the step 4-5; if the current is normal, executing step 6;
step 6: maintaining the repair voltage for a certain time to strengthen the connection strength of the repair point of the binding wire.
The step 1 comprises the following steps:
step 11: connecting the pins without the fusing of the binding wires together through a wire to serve as a pin, and defining the pin as a combined pin;
step 12: and defining the pin with the fusing of the binding wire as a fusing pin.
Preferably, the working voltage in step 4 is low-voltage and low-current alternating current, the low voltage is rated working voltage of the chip, and the low current is rated working current of the chip.
Preferably, the repair voltage in step 5 is an alternating current with high voltage and small current, and the high voltage must be higher than the reverse breakdown voltage of all PN junctions in the chip and must be higher than the breakdown voltage of the fuse gap of the binding wire.
An apparatus for automatically repairing a chip, comprising:
the microcontroller is connected with the adjustable power supply and the ammeter, sends a control command, sets the voltage and the current of the adjustable power supply, and simultaneously obtains the current in the current circuit through the ammeter;
the ammeter is connected with the chip and the adjustable power supply in series and sends the current magnitude and direction of the current circuit to the microcontroller;
the adjustable power supply is connected with the chip and the ammeter in series, receives a control command sent by the microcontroller from a serial port, adjusts the voltage and the direction, and can limit the current in the circuit.
The invention has the beneficial effects that: the problem that the chip can only be discarded once damaged is solved, and a large number of damaged chips can be regenerated. Greatly reduces the economic loss caused by the damage and the abandonment of the chip and the consumption of manpower, financial resources and material resources caused by the repeated production of the chip, and simultaneously avoids the additional environmental pollution.
Drawings
FIG. 1 is a flow chart of the operation of the present invention.
Fig. 2 is a schematic diagram of a chip pin connection line according to the present invention.
Fig. 3 is a schematic circuit diagram.
Fig. 4 is a hardware block diagram.
Fig. 5 is an alternating current waveform.
FIG. 6 is a schematic view of a fused binding-wire.
Fig. 7 is a schematic view of a binding wire in a repair process.
Fig. 8 is a schematic view of the binding-wire after the repair is completed.
In the figure: 1-fusing pin, 2-merging pin, 3-chip with fused binding wire, 4-ammeter, 5-adjustable power supply, 6-first fusing point, 7-second fusing point and 8-electric spark.
Detailed Description
The invention will be further explained with reference to the drawings.
As shown in fig. 1, a method for automatically repairing a chip includes the following steps:
step 1: marking and processing pins of the chip with the fusing of the binding wires;
step 2: the chip is connected with the ammeter in series and is connected with an adjustable power supply;
and step 3: the microcontroller is connected with the adjustable power supply and the ammeter;
and 4, step 4: the microcontroller sends a control command to the adjustable power supply, and the voltage and the direction of the adjustable power supply are set to be working voltages which are in sine or cosine periodic change;
and 5: judging whether the current of the current circuit is normal, if not, applying a repairing voltage which periodically changes in sine or cosine, and then repeatedly executing the step 4-5; if the current is normal, executing step 6;
step 6: maintaining the repair voltage for a certain time to strengthen the connection strength of the repair point of the binding wire.
The step 1 comprises the following steps:
step 11: connecting the pins without the fusing of the binding wires together through a wire to serve as a pin, and defining the pin as a combined pin;
step 12: and defining the pin with the fusing of the binding wire as a fusing pin.
It should be understood that the working voltage in step 4 is low-voltage and low-current alternating current, the low voltage is the rated working voltage of the chip, and the low current is the rated working current of the chip; the voltage waveform of the alternating current recommends a sine wave, and the frequency recommends a value of 100 Hz.
It should be noted that the criterion of whether the circuit current is normal in step 5 is whether the current is greater than zero, and if the current is greater than zero, it indicates that the current is normal, and the fused binding wire is reconnected; if the current is zero, the current is abnormal, and the blown binding wire is not reconnected.
It should be understood that the repair voltage in step 5 is an alternating current with high voltage and small current, and the high voltage must be higher than the reverse breakdown voltage of all PN junctions in the chip and must be higher than the breakdown voltage of the binding wire fusing gap; but the voltage value is not too high so as to prevent the permanent damage of the internal circuit of the chip caused by an excessively strong electric field; the voltage value is recommended to be 100V, and the voltage value adopted in the specific implementation needs to be adjusted according to the type and the production process of the chip; the voltage waveform of the alternating current is recommended to be a sine wave, and the frequency recommended to be 100 Hz.
It should be noted that the time for applying the repair voltage once is recommended to be not shorter than 5 seconds.
It should be noted that, the repair voltage is maintained for a certain time in step 6 to strengthen the connection strength of the repair point of the binding-wire, and the recommended duration is 3 minutes, and the duration in the implementation needs to be determined according to the material and diameter of the binding-wire.
It should be noted that the ac voltage refers to an effective voltage of the ac, and the effective voltage V isrmsAnd peak voltage VpkThe relationship of (a) is as follows:
to say thatIt is clear that alternating current refers to the effective current of alternating current, whereas the effective current IrmsAnd peak current IpkThe relationship of (a) is as follows:
as shown in fig. 2, before repairing a chip with a fused binding wire, a pin with the fused binding wire needs to be defined as a "fused pin" first, and the remaining pins without the fused binding wire are all connected together through a wire to be a pin, which is defined as a "merged pin".
It should be noted that the chip has only two pins, and thus the current operation is not required; if there are three or more pins in the chip, all normal pins need to be merged.
As shown in fig. 3, the component 3 is a chip with a fuse wire, and its left and right ends are the fuse pin and the merge pin defined above (without distinguishing polarities), and there is usually a gap of about 20 μm at the fuse wire inside; the component 4 is an ammeter and can acquire the current magnitude and direction in the current circuit under the control of the microcontroller; the component 5 is an adjustable power supply, can change the magnitude and direction of voltage in real time under the control of a microcontroller, and can limit the magnitude of current in a circuit.
As shown in fig. 4, both the adjustable power supply and the current meter are directly connected to the microcontroller. On one hand, the microcontroller can send a control command through a corresponding interface (usually a serial port), set the voltage and the direction of the adjustable power supply, and limit the maximum current in the circuit by setting the upper limit value and the lower limit value of the current; on the other hand, the microcontroller may also obtain the current magnitude and direction in the current circuit from the current meter through a corresponding interface (usually a serial port).
It should be noted that, the microcontroller stores a control program, and it can automatically complete the chip repairing process according to the setting of the program.
Fig. 5 is an alternating current waveform.
As shown in fig. 6, after the chip bonding wire is melted, a gap of about 20 μm is formed at the melted portion.
As shown in fig. 7, when a repair voltage is applied between the fuse pin and the merge pin of the chip, air in the fuse gap is broken down by a high voltage strong electric field to generate a minute electric spark; the tiny electric sparks cause tiny local melting on the surface of the melting point, and the melted gold/copper is close to the melting point at the other end under the action of the strong electric field. In the process, the two melting points are gradually thinned and lengthened, continuously extend towards each other and finally are completely contacted together.
Fig. 8 is a schematic view of the binding-wire after the repair is completed.
The embodiment takes an LED light emitting chip as an example, and describes how to integrate the technical solution of the present invention into a device and try to repair the light emitting chip when the LED light emitting chip is damaged.
In order to provide the device with the ability to automatically attempt to repair the LED emitter chip when the LED emitter chip is damaged, the microcontroller, the adjustable power supply, and the current meter of fig. 4 should be integrated into the device, and the circuit connection relationship between the LED emitter chip, the current meter, and the adjustable power supply is shown in fig. 3.
When the equipment is started and the hardware exception is alarmed, the equipment can carry out self-checking on all hardware once. In the hardware self-checking process, if the LED light chip is found to be out of order, an automatic repair program in the microcontroller may be automatically started, and the repair process is as shown in fig. 1.
In the process of repairing the LED light emitting chip, since the rated operating voltage of the LED light emitting chip is 2.2V, the operating voltage shown in fig. 1 is set to 2.2V (the operating voltage varies due to the different light emitting colors of the LEDs); since the reverse breakdown voltage of the LED luminary chip is typically tens of volts and the binding wire fusing gap is typically around 20 microns, we select 100V ac voltage as the repair voltage and set the ac frequency to 100 Hz.
In the above process, no matter the operating voltage or the repair voltage is applied, the current value in the circuit needs to be limited to be less than or equal to the rated operating current of 20mA (the operating current varies with different LED light emitting powers) in the whole process.
When the binding wire in the LED light chip is fused, a fusion gap of about 20 μm is formed between two fusion points, as shown in fig. 6.
When the auto-repair program in the microcontroller proceeds to step 4 in fig. 1, an attempt is made to turn on the binding wire in the chip. Immediately next, step 5 in fig. 1 is executed, and the microcontroller will obtain the current magnitude in the current circuit through the current meter. If the current in the current circuit is zero, the state that the binding wires in the chip are disconnected is shown, and then repairing voltage is applied to repair the fusing gaps of the binding wires. After 5 seconds of repairing the binding-wire fusing gap, the process returns to step 4 in fig. 1 to continue the process. If the current level in the present circuit is greater than zero, it indicates that the bond wire in the chip has been reconnected, and step 6 in FIG. 1 should be performed. I.e., the binding-wire repair point is consolidated by maintaining the repair voltage, which takes about 3 minutes.
Claims (5)
1. A method for automatically repairing a chip is characterized by comprising the following steps:
step 1: marking and processing pins of the chip with the fusing of the binding wires;
step 2: the chip is connected with the ammeter in series and is connected with an adjustable power supply;
and step 3: the microcontroller is connected with the adjustable power supply and the ammeter;
and 4, step 4: the microcontroller sends a control command to the adjustable power supply, and the voltage and the direction of the adjustable power supply are set to be working voltages which are in sine or cosine periodic change;
and 5: judging whether the current of the current circuit is normal, if not, applying a repairing voltage which periodically changes in sine or cosine, and then repeatedly executing the step 4-5; if the current is normal, executing step 6;
step 6: maintaining the repair voltage for a certain time to strengthen the connection strength of the repair point of the binding wire.
2. The method for automatically repairing chips as claimed in claim 1, wherein said step 1 comprises the steps of:
step 11: connecting the pins without the fusing of the binding wires together through a wire to serve as a pin, and defining the pin as a combined pin;
step 12: and defining the pin with the fusing of the binding wire as a fusing pin.
3. The method for automatically repairing chips as claimed in claim 1, wherein the operation voltage in step 4 is a low-voltage and low-current alternating current, the low voltage is the rated operation voltage of the chip, and the low current is the rated operation current of the chip.
4. The method for automatically repairing chips as claimed in claim 1, wherein the repairing voltage in step 5 is a high voltage alternating current with small current, and the high voltage must be higher than the reverse breakdown voltage of all PN junctions in the chip and must be higher than the breakdown voltage of the fuse gap of the binding wire.
5. An apparatus for automatically repairing a chip, comprising:
the microcontroller is connected with the adjustable power supply and the ammeter, sets the voltage and the current of the adjustable power supply by sending a control command to the adjustable power supply, and provides working voltage which periodically changes in sine or cosine for the chip; meanwhile, the current in the current circuit is obtained through an ammeter, if the current in the current circuit is abnormal, the adjustable power supply is controlled to apply a repair voltage which changes in a sine or cosine periodic manner, then the adjustable power supply is controlled to provide a working voltage of the chip, and the process is repeated until the current of the circuit is normal when the working voltage is applied; after the current is normal, the microcontroller controls the adjustable power supply to maintain the repair voltage for a certain time so as to consolidate the wire binding repair point; the repair voltage is alternating current with high voltage and small current, and the high voltage must be higher than reverse breakdown voltage of all PN junctions in the chip and must be higher than breakdown voltage of a binding wire fusing gap;
the ammeter is connected with the chip and the adjustable power supply in series and used for sending the current magnitude and direction of the current circuit to the microcontroller so as to judge whether the current circuit is normal or not;
the adjustable power supply is connected with the chip and the ammeter in series, receives a control command sent by the microcontroller, adjusts the voltage and the direction, and limits the current in the circuit;
before the chip is connected with an ammeter and an adjustable power supply to be repaired, a pin with a fused binding wire is defined as a fused pin, and the other pins without the fused binding wire are connected together through a wire to serve as a pin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011591293.7A CN112701210B (en) | 2020-12-29 | 2020-12-29 | Method and device for automatically repairing chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011591293.7A CN112701210B (en) | 2020-12-29 | 2020-12-29 | Method and device for automatically repairing chip |
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| CN112701210A CN112701210A (en) | 2021-04-23 |
| CN112701210B true CN112701210B (en) | 2022-03-11 |
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Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006258686A (en) * | 2005-03-18 | 2006-09-28 | Agilent Technol Inc | Reliability measuring device and measuring method |
| JP5216302B2 (en) * | 2006-12-13 | 2013-06-19 | ルネサスエレクトロニクス株式会社 | On-chip current measuring method and semiconductor integrated circuit |
| CN100576581C (en) * | 2008-11-05 | 2009-12-30 | 深圳市大族激光科技股份有限公司 | A kind of thin-film solar cell chip renovation method and device |
| JP5912466B2 (en) * | 2010-12-10 | 2016-04-27 | 株式会社半導体エネルギー研究所 | Driving method of light emitting element |
| CN103779251B (en) * | 2014-01-07 | 2016-04-20 | 上海众人网络安全技术有限公司 | A kind of COB binding line method of testing |
| CN206490046U (en) * | 2017-02-15 | 2017-09-12 | 扬州扬杰电子科技股份有限公司 | The system for testing the forward and reverse transfer capability of photovoltaic bypass diode |
| CN106653642B (en) * | 2017-02-15 | 2023-09-15 | 扬州扬杰电子科技股份有限公司 | System and method for testing forward and reverse conversion capability of photovoltaic bypass diode |
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