CN112694616A - High-temperature and high-humidity LED packaging isolation polymer and LED device - Google Patents
High-temperature and high-humidity LED packaging isolation polymer and LED device Download PDFInfo
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- 238000002955 isolation Methods 0.000 title claims abstract description 63
- 229920000642 polymer Polymers 0.000 title claims abstract description 37
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 20
- 239000010410 layer Substances 0.000 claims abstract description 86
- 239000012790 adhesive layer Substances 0.000 claims abstract description 19
- 229910020388 SiO1/2 Inorganic materials 0.000 claims abstract description 14
- 229910020447 SiO2/2 Inorganic materials 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052681 coesite Inorganic materials 0.000 claims description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 12
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- 229910052905 tridymite Inorganic materials 0.000 claims description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 125000003118 aryl group Chemical group 0.000 claims description 6
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 6
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- 239000010703 silicon Substances 0.000 claims description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 125000002751 aliphatic alkane group Chemical group 0.000 claims description 4
- 125000003277 amino group Chemical group 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
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- 238000012423 maintenance Methods 0.000 abstract description 13
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- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 8
- 239000002253 acid Substances 0.000 description 8
- 239000003292 glue Substances 0.000 description 8
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 8
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 7
- 238000005538 encapsulation Methods 0.000 description 7
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- 238000005507 spraying Methods 0.000 description 7
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 7
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- NXDJCCBHUGWQPG-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol;terephthalic acid Chemical compound OCC1CCC(CO)CC1.OC(=O)C1=CC=C(C(O)=O)C=C1 NXDJCCBHUGWQPG-UHFFFAOYSA-N 0.000 description 1
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- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
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- 239000002103 nanocoating Substances 0.000 description 1
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- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229940100890 silver compound Drugs 0.000 description 1
- 150000003379 silver compounds Chemical class 0.000 description 1
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- 125000006850 spacer group Chemical group 0.000 description 1
- 238000010183 spectrum analysis Methods 0.000 description 1
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- 229910052717 sulfur Inorganic materials 0.000 description 1
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- 239000010409 thin film Substances 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/12—Polysiloxanes containing silicon bound to hydrogen
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/06—Preparatory processes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
- C08G77/26—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen nitrogen-containing groups
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a high-temperature and high-humidity resistant LED packaging isolation polymer and an LED device, wherein the polymer has the following molecular structure general formula: (R)3SiO1/2)a(RSiO3/2)b(R2SiO2/2)c(MfNg)d(XO1/2)eThe obtained isolation layer realizes the optimal matching of the packaging adhesive layer and the support by optimizing the type and the proportion and the using amount of the polymer organic active groups of the isolation layer, so that the LED device has the optimal isolation performance, the optimal light flux maintenance rate after vulcanization and the light color consistency.
Description
Technical Field
The invention belongs to the technical field of LED illumination, backlight and display, and particularly relates to an improvement applied to an LED filament packaging technology.
Background
The basic structure of the LED is an electroluminescent semiconductor material chip, the chip is fixed on a support by using solid crystal glue, then the chip and a circuit board are connected by using silver wires or gold wires, then the periphery of the chip is sealed by using epoxy resin or silica gel, the function of protecting the internal structure is achieved, and finally a shell is installed. At present, a functional area at the bottom of an LED support is basically a silver coating, and sulfide, water and the like easily penetrate through a packaging adhesive layer and react with the silver coating of the functional area to generate a black silver compound, so that an LED device has a light attenuation phenomenon.
In addition, the LED as a light emitting device directly affects the visual perception of people, and the light color consistency needs to be strictly controlled in the long-term use process. With the continuous development of LEDs, consumers have higher and higher requirements on the light color quality of LEDs, and especially in indoor lighting, the light color consistency is also receiving more and more attention as an important basis for evaluating the light color quality of LED lamps, wherein CIE color coordinates are important indexes for evaluating the light color consistency.
In order to prevent the silver layer of the functional area at the bottom of the LED support from undergoing a vulcanization reaction, an LED package structure is proposed, in which a sulfur-proof waterproof film is coated on the inner wall of the cavity of the support and the LED chip, or a sulfur-proof waterproof film is coated on the upper surface of the package adhesive layer, so as to prevent the sulfur-containing water-containing gas from entering the inside of the LED device through the package adhesive layer and reacting with the silver layer of the functional area, but the LED device generates heat during use, the temperature of the LED device changes during the daily turning on and off of the lamp, the barrier film and the package adhesive layer both have different degrees of expansion and contraction, if the adhesive force between the barrier layer and the package adhesive layer is poor, the barrier film and the package adhesive will crack or even peel off during the heat and cold shrinkage processes during long-term use of the LED device, and under such a situation, the CIE color coordinates of the LED device will shift to a larger extent, further, the light color has a very large difference, and even the LED device is dead under severe conditions, which affects the normal use of the LED device. The cold and hot shock test is usually used to quickly simulate the cold and hot phenomena of the LED device during the daily use.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides the high-temperature high-humidity LED packaging isolation polymer and the LED device, which solve the problem of light color consistency while ensuring high barrier property of the LED device in a high-temperature high-humidity environment. .
In order to solve the technical problems, the invention adopts the following technical scheme: an LED packaging isolation polymer resistant to high temperature and high humidity has the following molecular structure general formula:
(R3SiO1/2)a(RSiO3/2)b(R2SiO2/2)c(MfNg)d(XO1/2)e
wherein each group R is independently selected from an aliphatic alkane group, an aryl group, an amino group or a hydrogen atom; x is a hydrogen atom; m is selected from silicon or metal elements; n is selected from oxygen element or nitrogen element; a. b, c, d and e are the polymerization degrees of all the groups, a is 0 or positive number, b is 0 or positive number, c is 0 or positive number, d is positive number, e is 0 or positive number, f is more than or equal to 1 and less than or equal to 3, g is more than or equal to 1 and less than or equal to 4, and d/(a + b + c + d + e) is more than or equal to 50% and less than or equal to 99%.
Preferably, the aryl group is selected from phenyl, substituted phenyl, naphthyl or substituted naphthyl.
Preferably, M in the polymerfNgIs TiO2、Al2O3Or AlN.
Preferably, the compound has the following molecular structural general formula:
(R3SiO1/2)a(RSiO3/2)b(R2SiO2/2)c(SiO2)d(HO1/2)e
wherein each group R is independently selected from aliphatic alkane groups, aryl groups, amino groups or hydrogen atoms, a is more than or equal to 1 and less than or equal to 8, b is more than or equal to 7 and less than or equal to 19, c is more than or equal to 4 and less than or equal to 20, d is more than or equal to 40 and less than or equal to 100, e is more than or equal to 0 and less than or equal to 8, and d/(a + b + c + d + e) is more than or equal to 50.
Preferably, d/(a + b + c + d + e) is 60% or more and 90% or less.
Preferably, 0. ltoreq. e/(a + b + c + d + e). ltoreq.5%.
The invention also provides an LED device, which comprises a support, a groove arranged on the support, an LED chip arranged in the groove, and a packaging adhesive layer filled and covered on the groove and the LED chip, wherein a light reflection layer is arranged on the surface of the groove, and the surface of the groove and the surface of the LED chip are both provided with the isolation layer of the packaging isolation polymer disclosed by any one of claims 1-6.
Preferably, the material of the encapsulation glue layer adopts epoxy resin or organic silicon gel.
Preferably, the encapsulating adhesive layer is mixed with one or more of scattering particles, red fluorescent powder, yellow fluorescent powder or green fluorescent powder.
Preferably, the thickness of the isolation layer is 6nm to 600 nm.
Compared with the prior art, the invention has the following advantages: the isolation layer of the LED device packaged by the isolation polymer can ensure that the luminous flux maintenance rate of the LED device after vulcanization is more than 90 percent, and improves the isolation performance of the LED device; in addition, the matching performance of the isolation layer and the packaging adhesive layer in the process of expansion with heat and contraction with cold is improved by controlling the types and the number of organic reactive groups (amino, hydroxyl and silicon hydrogen) of the isolation layer, so that the LED device is free from cracking and peeling after cold and heat impact tests at-40 ℃ and 125 ℃, the color coordinate change value is less than 0.002, and the light and color consistency of the LED device is ensured.
Drawings
Fig. 1 is a schematic structural diagram of the LED support package according to the present invention.
The LED packaging structure comprises a support 1, an LED chip 2, a packaging adhesive layer 3, a groove 4 and an isolation layer 5.
Detailed Description
The invention will be further elucidated with reference to the following description of an embodiment in conjunction with the accompanying drawing. It is to be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present invention, which is to be given the full breadth of the appended claims and any and all equivalent modifications thereof which may occur to those skilled in the art upon reading the present specification.
In this context, luminous flux maintenance refers to the ratio, expressed as a percentage, of the luminous flux of an LED lamp, which is turned on under specified conditions, over a period of time during its lifetime, to the initial luminous flux of the LED lamp. As the lighting time of the LED lamp increases, the luminous flux of the LED lamp decreases. The effective lifetime is defined in terms of luminous flux maintenance. When the luminous flux maintenance rate is lower than 50%, the service life of the LED lamp is considered to be reached.
Example 1
As shown in fig. 1, the present embodiment provides an LED device, which includes a support 1, the support 1 is provided with a groove 4 in an inverted trapezoid shape, a silver coating is disposed on a surface of the groove 4, a bipolar chip is disposed at a bottom of the groove 4, an isolation layer 5 covering the bipolar chip is filled inside the groove 4, and an encapsulation adhesive layer 3 is organic silica gel mixed with yellow phosphor. The separating layer 5 is a polymer with a molecular formula of (Me)3SiO1/2)a(HSiO3/2)b(Me2SiO2/2)c(SiO2)dWherein Me is methyl, and a: b: c: d: 5:15:15: 85. Isolation layer 5 adopts the mode coating of spraying to encapsulate 3 upper surfaces of glue film, and isolation layer 5 is used for separation light reflection layer and external gas to contact, and isolation layer 5's thickness is 100 nm.
The synthesis method of the polymer comprises the following steps: adding 18.3g of trimethoxy silane into a flask, sequentially adding 60g of deionized water and 60g of concentrated hydrochloric acid with the mass percent of 37%, quickly adding 18.0g of dimethyl dimethoxy silane and 177.1g of ethyl orthosilicate, refluxing at 70 ℃ for 60min, adding 8.1g of hexamethyldisiloxane, continuously refluxing for 60min, pouring the solution in the flask into a separating funnel after refluxing, separating an acid water layer, washing an organic layer until the pH is neutral, pouring the organic layer into the flask, adding 10g of deionized water, refluxing at 70 ℃ for 60min, carrying out reduced pressure distillation and concentration by using a vacuum water pump, and removing the solvent and low-boiling-point substances under reduced pressure to finish the preparation.
Example 2
As shown in fig. 1, the present embodiment provides an LED device, which includes a support 1, the support 1 is provided with a groove 4 in an inverted trapezoid shape, a silver coating is disposed on a surface of the groove 4, a bipolar chip is disposed at a bottom of the groove 4, an isolation layer 5 covering the bipolar chip is filled inside the groove 4, and an encapsulation adhesive layer 3 is organic silica gel mixed with yellow phosphor. The separating layer 5 is a polymer with a molecular formula of (Me)3SiO1/2)a(NH2SiO3/2)b(Me2SiO2/2)c(SiO2)dWherein Me is methyl, and a: b: c: d: 6:15:17: 46. Isolation layer 5 adopts the mode coating of spraying to encapsulate 3 upper surfaces of glue film, and isolation layer 5 is used for separation light reflection layer and external gas to contact, and isolation layer 5's thickness is 500 nm.
The synthesis method of the polymer comprises the following steps: adding 7.1g of aminosilane into a flask, sequentially adding 60g of deionized water and 60g of 1 mass percent sodium hydroxide solution, quickly adding 20.4g of dimethyl dimethoxysilane and 95.8g of ethyl orthosilicate, refluxing at 70 ℃ for 60min, adding 9.7g of hexamethyldisiloxane, continuously refluxing for 60min, pouring the solution in the flask into a separating funnel after refluxing, separating an alkaline water layer, washing an organic layer until the pH is neutral, pouring the organic layer into the flask, adding 10g of deionized water, refluxing at 70 ℃ for 60min, carrying out reduced pressure distillation and concentration by using a vacuum water pump, and removing the solvent and low-boiling-point substances under reduced pressure to obtain the resin for preparing the isolating layer 5.
Example 3
As shown in fig. 1, the present embodiment provides an LED device, which includes a support 1, the support 1 is provided with a groove 4 in an inverted trapezoid shape, a silver coating is disposed on a surface of the groove 4, a bipolar chip is disposed at a bottom of the groove 4, an isolation layer 5 covering the bipolar chip is filled inside the groove 4, and an encapsulation adhesive layer 3 is organic silica gel mixed with yellow phosphor. The separating layer 5 is a polymer with a molecular formula of (Me)3SiO1/2)a(HSiO3/2)b(Ph2SiO2/2)c(SiO2)dWherein Me is methyl, Ph is phenyl, and a: b: c: d: 0.5:1:0.5: 98. Isolation layer 5 adopts the mode coating of spraying to encapsulate 3 upper surfaces of glue film, and isolation layer 5 is used for separation light reflection layer and external gas to contact, and isolation layer 5's thickness is 10 nm.
The synthesis method of the polymer comprises the following steps: adding 0.8g of hexamethyldisiloxane, 1.2g of trimethoxy silane, 1.2g of diphenyl dimethoxy silane and 204.2g of ethyl orthosilicate into a flask, sequentially adding 60g of deionized water and 60g of concentrated hydrochloric acid with the mass percent of 37%, refluxing at 70 ℃ for 60min, pouring the solution in the flask into a separating funnel after refluxing, separating an acid water layer, washing an organic layer until the pH value is neutral, pouring the organic layer into the flask, adding 5g of deionized water, refluxing at 70 ℃ for 60min, then carrying out reduced pressure distillation and concentration by using a vacuum water pump, and removing a solvent and low-boiling-point substances under reduced pressure to obtain the resin for preparing the isolation layer 5.
Example 4
As shown in fig. 1, the present embodiment provides an LED device, which includes a support 1, the support 1 is provided with a groove 4 in an inverted trapezoid shape, a silver coating is disposed on a surface of the groove 4, a bipolar chip is disposed at a bottom of the groove 4, an isolation layer 5 covering the bipolar chip is filled inside the groove 4, and an encapsulation adhesive layer 3 is organic silica gel mixed with yellow phosphor. The separating layer 5 is a polymer with a molecular formula of (Me)3SiO1/2)a(HSiO3/2)b(Me2SiO2/2)c(SiO2)d(HO1/2)eWherein Me is methyl, and a: b: c: d: e: 4:14:15:66: 1. Isolation layer 5 adopts the mode coating of spraying to encapsulate 3 upper surfaces of glue film, and isolation layer 5 is used for separation light reflection layer and external gas to contact, and isolation layer 5's thickness is 100 nm.
The synthesis method of the polymer comprises the following steps: adding 17.1g of trimethoxy silane into a flask, sequentially adding 60g of deionized water and 70g of concentrated hydrochloric acid with the mass percent of 37%, quickly adding 18.0g of dimethyl dimethoxy silane and 137.5g of ethyl orthosilicate, refluxing at 70 ℃ for 60min, adding 6.5g of hexamethyldisiloxane, continuously refluxing for 60min, pouring the solution in the flask into a separating funnel after refluxing, separating an acid water layer, washing an organic layer until the pH is neutral, pouring the organic layer into the flask, adding 10g of deionized water, refluxing at 70 ℃ for 60min, carrying out reduced pressure distillation and concentration by using a vacuum water pump, and removing the solvent and low-boiling-point substances under reduced pressure to obtain the resin for preparing the isolation layer 5.
Example 5
As shown in fig. 1, the present embodiment provides an LED device, which includes a support 1, the support 1 is provided with a groove 4 in an inverted trapezoid shape, a silver coating is disposed on a surface of the groove 4, a bipolar chip is disposed at a bottom of the groove 4, an isolation layer 5 covering the bipolar chip is filled inside the groove 4, and an encapsulation adhesive layer 3 is organic silica gel mixed with yellow phosphor. The separating layer 5 is a polymer with a molecular formula of (Me)3SiO1/2)a(HSiO3/2)b(Me2SiO2/2)c(SiO2)d(HO1/2)eWherein Me is methyl, and a: b: c: d: e: 4:12:13:66: 5. Isolation layer 5 adopts the mode coating of spraying to encapsulate 3 upper surfaces of glue film, and isolation layer 5 is used for separation light reflection layer and external gas to contact, and isolation layer 5's thickness is 100 nm. 2018105074620
The synthesis method of the polymer comprises the following steps: adding 14.7g of trimethoxy silane into a flask, sequentially adding 60g of deionized water and 90g of concentrated hydrochloric acid with the mass percent of 37%, quickly adding 15.6g of dimethyl dimethoxy silane and 137.5g of ethyl orthosilicate, refluxing at 70 ℃ for 60min, adding 6.5g of hexamethyldisiloxane, continuously refluxing for 60min, pouring the solution in the flask into a separating funnel after refluxing, separating an acid water layer, washing an organic layer until the pH is neutral, pouring the organic layer into the flask, adding 10g of deionized water, refluxing at 70 ℃ for 60min, carrying out reduced pressure distillation and concentration by using a vacuum water pump, and removing the solvent and low-boiling-point substances under reduced pressure to obtain the resin for preparing the isolation layer 5.
Example 6
As shown in fig. 1, the present embodiment provides an LED device, which includes a support 1, the support 1 is provided with a groove 4 in an inverted trapezoid shape, a silver coating is disposed on a surface of the groove 4, a bipolar chip is disposed at a bottom of the groove 4, an isolation layer 5 covering the bipolar chip is filled inside the groove 4, and an encapsulation adhesive layer 3 is organic silica gel mixed with yellow phosphor. The separating layer 5 is a polymer with a molecular formula of (Me)3SiO1/2)a(HSiO3/2)b(Me2SiO2/2)c(TiO2)dWherein Me is methyl, and a: b: c: d: 5:15:15: 85. Isolation layer 5 adopts the mode coating of spraying to encapsulate 3 upper surfaces of glue film, and isolation layer 5 is used for separation light reflection layer and external gas to contact, and isolation layer 5's thickness is 100 nm.
The synthesis method of the polymer comprises the following steps: adding 18.3g of trimethoxy silane into a flask, sequentially adding 60g of deionized water and 60g of concentrated hydrochloric acid with the mass percent of 37%, quickly adding 18.0g of dimethyl dimethoxy silane and 193.9g of ethyl titanate, refluxing for 50min at 70 ℃, adding 8.1g of hexamethyldisiloxane, continuously refluxing for 60min, pouring the solution in the flask into a separating funnel after refluxing, separating an acid water layer, washing an organic layer to be neutral by water, pouring the organic layer into the flask, adding 10g of deionized water, refluxing for 60min at 70 ℃, carrying out reduced pressure distillation and concentration by a vacuum water pump, and removing a solvent and low-boiling-point substances under reduced pressure to obtain the resin for preparing the isolation layer 5.
Comparative example 1
This comparative example differs from example 1 in that: and an isolating layer 5 is not coated between the groove 4 and the packaging adhesive layer 3.
Comparative example 2
This comparative example differs from example 1 in that: the isolating layer 5 is polymer with the molecular formula of (Me)3SiO1/2)a(HSiO3/2)b(Me2SiO2/2)c(SiO2)dWherein Me is methyl, and a: b: c: d: 8:19:20: 40.
The synthesis method of the polymer comprises the following steps: adding 23.2g of trimethoxy silane into a flask, sequentially adding 60g of deionized water and 60g of concentrated hydrochloric acid with the mass percent of 37%, quickly adding 24.0g of dimethyl dimethoxy silane and 83.3g of ethyl orthosilicate, refluxing at 70 ℃ for 60min, adding 13.0g of hexamethyldisiloxane, continuously refluxing for 60min, pouring the solution in the flask into a separating funnel after refluxing, separating an acid water layer, washing an organic layer until the pH is neutral, pouring the organic layer into the flask, adding 10g of deionized water, refluxing at 70 ℃ for 60min, carrying out reduced pressure distillation and concentration by using a vacuum water pump, and removing the solvent and low-boiling-point substances under reduced pressure to obtain the resin for preparing the isolation layer 5.
Comparative example 3
This comparative example differs from example 1 in that: the isolating layer 5 is polymer with the molecular formula of (Me)3SiO1/2)a(HSiO3/2)b(Me2SiO2/2)c(SiO2)dWhere Me is methyl and a: b: c: d ═ 0:0:0:100, the spacer layer 5 is a pure silica film.
The synthesis method of the polymer comprises the following steps: adding 208.3g of tetraethoxysilane into a flask, sequentially adding 60g of deionized water and 60g of concentrated hydrochloric acid with the mass percent of 37%, continuously refluxing for 60min, pouring the solution in the flask into a separating funnel after refluxing, separating an acid water layer, washing an organic layer until the pH value is neutral, pouring the organic layer into the flask, adding 5g of deionized water, refluxing for 60min at 70 ℃, performing reduced pressure distillation and concentration by using a vacuum water pump, and removing the solvent and low-boiling-point substances under reduced pressure to obtain the resin for preparing the isolation layer 5.
Comparative example 4
This comparative example differs from example 1 in that: the isolating layer 5 is polymer with the molecular formula of (Me)3SiO1/2)a(HSiO3/2)b(Me2SiO2/2)c(SiO2)d(HO1/2)eWherein Me is methyl, and a: b: c: d: e: 4:8:11:71: 6.
The synthesis method of the polymer comprises the following steps: adding 9.8g of trimethoxy silane into a flask, sequentially adding 60g of deionized water and 90g of concentrated hydrochloric acid with the mass percent of 37%, quickly adding 13.2g of dimethyl dimethoxy silane and 147.9g of ethyl orthosilicate, refluxing at 70 ℃ for 60min, adding 6.5g of hexamethyldisiloxane, continuously refluxing for 60min, pouring the solution in the flask into a separating funnel after refluxing, separating an acid water layer, washing an organic layer until the pH is neutral, pouring the organic layer into the flask, adding 10g of deionized water, refluxing at 70 ℃ for 60min, carrying out reduced pressure distillation and concentration by using a vacuum water pump, and removing the solvent and low-boiling-point substances under reduced pressure to obtain the resin for preparing the isolation layer 5.
And (3) performance testing:
the LED devices of examples 1 to 6 and comparative examples 1 to 4 were subjected to the luminous flux maintenance ratio test after vulcanization and the cold-hot impact tests at-40 ℃ and 125 ℃ and the test results are shown in table 1.
The test method of the luminous flux maintenance rate test after vulcanization comprises the following steps:
the method comprises the steps of firstly carrying out luminous flux test on a sample to be tested on a rapid spectrum analysis system, placing a piece of white paper in a closable 1L container, and then fixing the sample on the paper in a counterclockwise sequence. Weighing 0.5 g of sulfur powder, placing the sulfur powder in a small open beaker, fixing the small beaker at the center of a paper sheet, and finally sealing the container.
Setting the temperature of the oven to be 80 ℃, setting the baking time to be 8h, and taking out the experimental sample immediately after the experiment is finished. The sample luminous flux was measured again in the order of measurement before the experiment.
-test method for cold-hot impact test at 40 ℃ and 125 ℃:
firstly, testing the color coordinate of an experimental sample by using an optical measurement system integrating sphere, then putting the sample into a cold-hot impact box, and confirming the test conditions: starting the machine in a cycle of-40 ℃/30min and 125 ℃/30 min.
After 1000 cycles, the experimental sample was taken out and the color coordinates were measured with an optical measurement system integrating sphere. The test results are shown in the following table:
remarking:
o indicates that the barrier property and the light color consistency of the LED device are excellent: the luminous flux maintenance rate after vulcanization is more than or equal to 90% or the color coordinate change value is 0-0.0014;
o indicates that the barrier and light color consistency of the LED device are good: the luminous flux maintenance rate after vulcanization is more than 80% and less than 90% or the color coordinate change value is 0.0015-0.002;
Δ indicates that the barrier property and the light color uniformity of the LED device are poor: the light flux maintenance rate after vulcanization is less than or equal to 80 percent or the color coordinate change value is more than 0.002.
Preferably, the support of the present invention may employ a PCB substrate or a metal support, and the LED chip employs a flip chip, a single-stage chip, or a bipolar chip.
Preferably, the groove of the bracket can be formed by injection molding of materials such as polyphthalamide, poly (1, 4-cyclohexanedimethanol terephthalate), epoxy resin molding compound or sheet molding compound, and the like, and the inverted trapezoid is adopted to ensure the maximum light-emitting angle of the LED chip so as to improve the light utilization rate.
From the above table, it can be seen that the polymer of the present invention contains hydroxyl groups, and the hydroxyl groups can increase the distance between the isolation layer 5 and the encapsulant layer 3And (4) adhesive force. When e/(a + b + c + d + e) > 5%, the luminous flux maintenance rate of the vulcanized LED device is obviously reduced, and the barrier property of the LED device is reduced. And when the range of e/(a + b + c + d + e) is more than or equal to 0 and less than or equal to 5 percent, the color coordinate change value of the LED device is less than 0.002 after cold and hot impact at minus 40 ℃ and 125 ℃, the luminous flux maintenance rate after vulcanization is more than 80 percent, and the light and color consistency is ensured while the barrier property of the LED device is improved in detail. When a, b, c and e are all 0, M is silicon, N is oxygen, the isolation layer 5 is pure SiO2Thin film, pure SiO2The isolation layer 5 made of the film is easy to crack, the color coordinate change quantity of the LED device containing the isolation layer 5 after cold and hot shock at-40 ℃ and 125 ℃ is larger than 0.002, and the light and color consistency of the LED device is reduced.
The isolation layer 5 of the present invention is a transparent isolation layer having a thickness of 1nm to 1000nm, and preferably, the isolation layer 5 has a thickness of 6nm to 600 nm. The isolation layer 5 can effectively prevent external sulfides or moisture and other substances from entering the LED device, prevent the external sulfides or moisture and other substances from reacting with the silver coating on the surface of the groove 4, and further prevent the LED device from generating light attenuation phenomenon caused by the reaction of the silver coating in the long-term use process.
Compared with the prior art in which an inorganic compound nano coating or an organic polymer molecular film is adopted, the invention realizes the optimal matching of the packaging adhesive layer and the support by optimizing the type and the proportion of the organic active groups of the polymers of the isolation layer and coating the surfaces of the groove and the chip in the modes of spraying, spot coating, drop coating, dip coating, CVD, ALD or PVD and the like, thereby enabling the LED device to have the optimal blocking performance, the optimal light flux maintenance rate after vulcanization and the light color consistency.
Claims (10)
1. The high-temperature and high-humidity resistant LED packaging isolation polymer is characterized by having the following molecular structure general formula:
(R3SiO1/2)a(RSiO3/2)b(R2SiO2/2)c(MfNg)d(XO1/2)e
wherein each group R is independently selected from an aliphatic alkane group, an aryl group, an amino group or a hydrogen atom; x is a hydrogen atom; m is selected from silicon or metal elements; n is selected from oxygen element or nitrogen element; a. b, c, d and e are the polymerization degrees of all the groups, a is 0 or positive number, b is 0 or positive number, c is 0 or positive number, d is positive number, e is 0 or positive number, f is more than or equal to 1 and less than or equal to 3, g is more than or equal to 1 and less than or equal to 4, and d/(a + b + c + d + e) is more than or equal to 50% and less than or equal to 99%.
2. The high temperature and high humidity resistant LED package isolation polymer of claim 1, wherein said aryl group is selected from phenyl, substituted phenyl, naphthyl or substituted naphthyl.
3. The high temperature and high humidity resistant LED package isolation polymer as claimed in claim 1, wherein M is in the polymerfNgIs TiO2、Al2O3Or AlN.
4. The high temperature and high humidity resistant LED packaging and isolating polymer as claimed in claim 1, wherein the polymer has the following general molecular structure formula:
(R3SiO1/2)a(RSiO3/2)b(R2SiO2/2)c(SiO2)d(HO1/2)e
wherein each group R is independently selected from aliphatic alkane groups, aryl groups, amino groups or hydrogen atoms, a is more than or equal to 1 and less than or equal to 8, b is more than or equal to 7 and less than or equal to 19, c is more than or equal to 4 and less than or equal to 20, d is more than or equal to 40 and less than or equal to 100, e is more than or equal to 0 and less than or equal to 8, and d/(a + b + c + d + e) is more than or equal to 50.
5. The high temperature and high humidity resistant LED packaging and isolating polymer as claimed in claim 1, wherein d/(a + b + c + d + e) is 60% or more and 90% or less.
6. The high temperature and high humidity resistant LED packaging and isolating polymer as claimed in claim 1, wherein 0 ≤ e/(a + b + c + d + e) ≤ 5%.
7. An LED device comprises a support, a groove arranged on the support, an LED chip arranged in the groove, and a packaging adhesive layer filled and covered on the groove and the LED chip, and is characterized in that a light reflection layer is arranged on the surface of the groove, and the surface of the groove and the surface of the LED chip are both provided with an isolation layer of the packaging isolation polymer according to any one of claims 1 to 6.
8. The LED device as claimed in claim 7, wherein the material of the encapsulant layer is epoxy resin or organic silicon gel.
9. The LED device of claim 7, wherein the encapsulant layer incorporates a blend of one or more of scattering particles, red phosphor, yellow phosphor, or green phosphor.
10. The LED device of claim 7, wherein the thickness of the isolation layer is between 6nm and 600 nm.
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CN107507905A (en) * | 2017-07-21 | 2017-12-22 | 广州慧谷化学有限公司 | A kind of LED component |
CN206820020U (en) * | 2017-07-21 | 2017-12-29 | 广州慧谷化学有限公司 | A kind of LED component |
CN107591473A (en) * | 2017-07-21 | 2018-01-16 | 广州慧谷化学有限公司 | LED component |
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US20170121463A1 (en) * | 2014-06-17 | 2017-05-04 | Guangzhou Human Chem Co., Ltd. | Curable organopolysiloxane composition and semiconductor device |
CN107507905A (en) * | 2017-07-21 | 2017-12-22 | 广州慧谷化学有限公司 | A kind of LED component |
CN206820020U (en) * | 2017-07-21 | 2017-12-29 | 广州慧谷化学有限公司 | A kind of LED component |
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