CN112687751B - High-speed photoelectric detector structure and manufacturing method thereof - Google Patents
High-speed photoelectric detector structure and manufacturing method thereof Download PDFInfo
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- CN112687751B CN112687751B CN202011590102.5A CN202011590102A CN112687751B CN 112687751 B CN112687751 B CN 112687751B CN 202011590102 A CN202011590102 A CN 202011590102A CN 112687751 B CN112687751 B CN 112687751B
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Abstract
The invention discloses a high-speed photoelectric detector structure, wherein an epitaxial wafer comprises an InP substrate, and a lower ohmic contact layer, a lower window layer, an absorption layer, an upper window layer and an upper ohmic contact layer which are sequentially grown on the InP substrate from bottom to top, the epitaxial wafer is arranged into a table-board structure, one side surface of the table-board structure is a light incident surface, an antireflection film is arranged on the light incident surface, the other side surface far away from the antireflection film is a light reflecting surface, and a high reflecting film is arranged on the light reflecting surface. The light incidence direction of the optical detector is vertical to the drift electric field direction, the absorption layer is 0.1-3 um, the drift of the current carrier is fast, and the bandwidth is high; the invention further reduces the size of the device, improves the bandwidth of the device, balances the uniform distribution of the photocurrent of the whole absorption layer and avoids the problem of signal nonlinear distortion caused by local photocurrent saturation due to uneven light absorption of the absorption layer while improving the internal quantum efficiency.
Description
Technical Field
The invention relates to the technical field of photoelectric detectors, in particular to a high-speed photoelectric detector and a manufacturing method thereof.
Background
The optical detector is widely applied to optical communication systems, imaging systems and military fields, and is a key light receiving device in high-speed optical communication systems. The light detector is moving towards high performance and high integration. Photodetectors used in fiber optic communication systems can be generally classified into two types, Photodiode (PD) and Avalanche Photodiode (APD). The frequency response bandwidth and quantum efficiency of conventional photodetectors are mutually constrained. The quantum efficiency of the device can be increased by adding an absorption layer of the device in general, but the carrier transit time becomes longer and the response rate is lowered. In the photodetector, absorption of photons occurs in the absorption region, and for communication wavelengths of 1310nm or 1550nm, a ternary compound InGaAs is generally used as a material of the absorption layer. In order to achieve high light absorption efficiency, the thickness of the absorption layer needs to reach 1-3 micrometers, but the thick absorption layer can cause long carrier transit time, so that the bandwidth of the photodetector can be affected. The quantum efficiency is the ratio of the average number of photoelectrons generated per unit time to the number of incident photons at a specific wavelength, and is an important parameter for describing the photoelectric conversion capability of a photoelectric device.
To address the limitations of optical detection between the respective bandwidths and quantum efficiencies, vertical cavity enhanced (RCE) detectors have been proposed. The basic structure is that the absorption layer is inserted into the resonant cavity of the DBR structure, and due to the enhancement effect of the resonant cavity, the device can obtain higher quantum efficiency under the condition of a thinner absorption layer, and simultaneously reduce the transit time of a photon-generated carrier in the absorption layer, so that high corresponding speed and high quantum efficiency can be simultaneously obtained. However, the Resonant Cavity Enhanced (RCE) photodetector has the characteristic of high-speed response due to the thin thickness of the absorption layer, but because the epitaxial growth DBR has the problem of small refractive index difference between two materials, the DBR has more logarithm to achieve higher reflectivity, and the epitaxial growth DBR has thick thickness, so that the process difficulty and cost are increased, the parasitic resistance of a device is large, and the bandwidth of the device is influenced.
Disclosure of Invention
To overcome the above-mentioned deficiencies in the prior art, it is an object of the present invention to design a high-speed photodetector that can address the limitations of optical detection between the respective bandwidths and quantum efficiencies.
The utility model provides a high-speed photoelectric detector, includes the epitaxial wafer, the epitaxial wafer includes the InP substrate, and by lower ohmic contact layer, lower window layer, absorbing layer, last window layer, the ohmic contact layer of going up that supreme grows in proper order down on the InP substrate, the epitaxial wafer sets up to mesa structure, a side of mesa structure is the light incidence plane, be equipped with the antireflection coating on the incidence plane, keep away from another side of antireflection coating is the light reflectance face, be equipped with the high reflectance coating on the light reflectance face.
Preferably, the reflection rate of the antireflection film is 0.03% -0.1%.
Preferably, the antireflection film is formed by combining one or more of Si, SiO2, SiNx, SiNOx, and Al2O 3.
Preferably, the high-reflection film has a reflectivity of 97% to 99%.
Preferably, the high reflection film is formed by combining one or more of Si, SiO2, SiNx, SiNOx, and Al2O 3.
Preferably, the resistivity of the InP substrate is 0.8-2x108ohm.cm。
Preferably, the length of the absorption layer of the table-board detector is 100-1000 um.
The patent also discloses a manufacturing method of the high-speed photoelectric detector, which comprises the following steps:
1) putting an InP substrate into MOCVD equipment, and epitaxially growing a lower ohmic contact layer, a lower window layer, an absorption layer, an upper window layer and an upper ohmic contact layer on the InP substrate from bottom to top in sequence;
2) taking out the epitaxial wafer, and manufacturing the epitaxial wafer into a mesa structure by using a semiconductor chip manufacturing process;
3) evaporating an antireflection film on a light incident surface of the optical table detector, and evaporating a high reflection film on a light reflection surface;
4) and evaporating positive and negative electrodes of the detector, and thinning the InP substrate to form the high-speed photoelectric detector.
Preferably, the antireflection film and the high-reflection film are evaporated by adopting a monoatomic layer deposition system.
Preferably, the antireflection film and the high reflection film can be evaporated by one or more layers.
The technical scheme has the following beneficial effects: 1) the absorption layer of the optical detector is distributed in a long range (100-1000 um), so that the absorption area is large, and the quantum efficiency is improved; 2) the light incidence direction of the optical detector is vertical to the drift electric field direction, the absorption layer is 0.1-3 um, the drift of the current carrier is fast, and the width and the height are improved; 3) according to the invention, the antireflection film is evaporated on the incident surface of the detector, and the high-reflection film is evaporated on the back surface of the detector, so that the size of the device is further reduced while the internal quantum efficiency is improved, the bandwidth of the device is improved, the uniform distribution of photocurrent of the whole absorption layer is balanced, and the problem of signal nonlinear distortion caused by local photocurrent saturation due to uneven light absorption of the absorption layer is avoided; 4) the DBR structure is independent of a current circuit, and the increase of the number of pairs of DBRs does not cause the rise of device resistance; 5) the front and back film coating process adopts an Atomic Layer Deposition (ALD) system, so that the film material is compact, the quality is high, the defects are few, and the reliability of the detector is improved.
Drawings
Fig. 1 is a schematic structural diagram of a high-speed photodetector according to the present invention.
Detailed Description
The following description of the embodiments of the present invention is provided for illustrative purposes, and other advantages and effects of the present invention will become apparent to those skilled in the art from the present disclosure.
Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many different forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to provide a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that the invention may be practiced without one or more of the specific details, or with other methods, components, devices, steps, and so forth. In other instances, well-known technical solutions have not been shown or described in detail to avoid obscuring aspects of the invention.
As shown in fig. 1, the present patent discloses a high-speed photodetector structure, which is a mesa structure detector, and includes an epitaxial wafer, where the epitaxial wafer includes an InP substrate 01, and a lower ohmic contact layer 02, a lower window layer 03, an absorption layer 04, an upper window layer 05, and an upper ohmic contact layer 06, which are sequentially grown on the InP substrate from bottom to top, the epitaxial wafer is configured into a mesa structure, one side surface of the mesa structure is a light incident surface, the light incident surface is perpendicular to the length direction of the absorption layer 04, an antireflection film 07 is disposed on the light incident surface, the other side surface of the mesa detector away from the antireflection film 07 is a light reflecting surface, and a high reflection film 08 is disposed on the light reflecting surface.
This high-speed photoelectric detector incident light is kicked into through the light incident plane of side, outwards jets out through the light reflex surface, for limit incident light detector constructs, does not grow thick DBR layer during epitaxy, at light incident plane evaporation coating antireflection film 07, can improve the light incidence rate, at light reflex surface evaporation coating 08, with remaining light reflection back to absorbing layer 04, under the very thin condition of keeping absorbing layer 04, make light fully absorb, consequently have the characteristics that the bandwidth is high promptly, have the advantage that quantum efficiency is high again.
As a preferred embodiment, the reflectance of the anti-reflective film is controlled to be between 0.03% and 0.1%, and the anti-reflective film 07 may be provided with one or more layers, each layer being made of one of Si, SiO2, SiNx, SiNOx, and Al2O 3. The reflectivity of the high-reflection film is controlled between 97% and 99%. The high reflection film 08 may also be provided with one or more layers, and the material used for each layer is one of Si, SiO2, SiNx, SiNOx, and Al2O 3.
Preferably, the InP substrate 01 has a resistivity of 0.8-2x108Cm, the length of the absorption layer of the table detector is 100-1000 um.
The patent also discloses a manufacturing method of the high-speed photoelectric detector, which comprises the following steps:
1) putting an InP substrate into MOCVD equipment, and epitaxially growing a lower ohmic contact layer, a lower window layer, an absorption layer, an upper window layer and an upper ohmic contact layer on the InP substrate from bottom to top in sequence;
2) taking out the epitaxial wafer, and manufacturing the epitaxial wafer into a mesa structure by using a semiconductor chip manufacturing process;
3) evaporating by adopting a monoatomic layer deposition system, evaporating an antireflection film on a light incident surface of the optical table detector, and evaporating a high-reflection film on a light reflection surface;
4) and evaporating positive and negative electrodes of the detector, and thinning the InP substrate to form the high-speed photoelectric detector.
For a more detailed understanding of the technical solution of the present invention, the following detailed description is given with reference to an embodiment:
with a resistivity of 0.8-2x108Cm of SI-InP as a growth substrate 01 was placed in an MOCVD system of Aixtron corporation. The pressure in the reaction chamber is 50mbar, the growth temperature is 670 ℃, and H is used2As carrier gas, trimethylindium (TMIn), trimethylgallium (TMGa), trimethylaluminum (TMAl), diethylzinc (DeZn), Silane (SiH)4) Arsine (AsH)3) And Phosphane (PH)3) And the N-InP buffer layer 02, the ohmic contact layer 02 under the N-InGaAsP with the wavelength of 1050-1150 nm, the N-InP window layer 03, the undoped intrinsic InGaAs absorption layer 04, the P-InP window layer 05 and the ohmic contact layer 06 of the P-InGaAsP with the wavelength of 1300-1400 nm are sequentially grown by taking the same as a reaction source gas, and the specific structural parameters are as follows.
| P-material | Q-wavelength (nm) | R-thickness (um) | S-doping concentration (cm-3) |
| T-InGaAsP | U-1300～1400 | V-0.05～0.2 | W-1-9E18 |
| X-P-InP | Y-～920 | Z-0.03～1 | AA-1-2E18 |
| BB-U-InGaAs | CC-～1700 | DD-0.1～3 | EE-<1E15 |
| FF-N-InP | GG-～920 | HH-1～10 | II-1-2E18 |
| JJ-N-InGaAsP | KK-1050～1150 | LL-0.1～0.5 | MM-1-9E18 |
| NN-InP substrate | OO-～920 | PP-100～1000 | QQ-semi-insulation |
After the epitaxial layer is grown, a mesa detector structure is formed by utilizing a known photoetching and etching process, the length of an absorption layer of the detector is 100-1000 microns, then, a SiO2/Al2O3/SiNx three-layer antireflection film is sequentially evaporated on a light incidence surface by utilizing an Atomic Layer Deposition (ALD) system, four high-reflection films of Si/Al2O3/Si/Al2O3 are sequentially evaporated on a light reflection surface, then, a positive electrode and a negative electrode of the detector are evaporated, and an InP substrate is thinned, so that the high-speed photoelectric detector disclosed by the invention is formed. The reflecting film can be provided with one layer or multiple layers, and the material used by the reflecting film is one of Si, SiO2, SiNx, SiNOx and Al2O 3.
The technical scheme has the following beneficial effects: 1) the absorption layer of the optical detector is distributed in a long range (100-1000 um), so that the absorption area is large, and the quantum efficiency is improved; 2) the light incidence direction of the optical detector is vertical to the drift electric field direction, the absorption layer is 0.1-3 um, the drift of the current carrier is fast, and the width and the height are improved; 3) according to the invention, the antireflection film is evaporated on the incident surface of the detector, and the high-reflection film is evaporated on the back surface of the detector, so that the size of the device is further reduced while the internal quantum efficiency is improved, the bandwidth of the device is improved, the uniform distribution of photocurrent of the whole absorption layer is balanced, and the problem of signal nonlinear distortion caused by local photocurrent saturation due to uneven light absorption of the absorption layer is avoided; 4) the DBR structure is independent of a current circuit, and the increase of the number of pairs of DBRs does not cause the rise of device resistance; 5) the front and back film coating process adopts a single Atomic Layer Deposition (ALD) system, so that the film material is compact, the quality is high, the defects are few, and the reliability of the detector is improved.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (6)
1. A high-speed photoelectric detector structure comprises an epitaxial wafer, wherein the epitaxial wafer comprises an InP substrate (01), and a lower ohmic contact layer (02), a lower window layer (03), an absorption layer (04), an upper window layer (05) and an upper ohmic contact layer (06) which are sequentially grown on the InP substrate (01) from bottom to top, it is characterized in that the epitaxial wafer is arranged into a mesa structure, one side surface of the mesa structure is a light incident surface, an antireflection film (07) is arranged on the incident surface, the other side surface far away from the antireflection film (07) is a light reflecting surface, a high reflection film (08) is arranged on the light reflection surface, the resistivity of the InP substrate (01) is 0.8-2E8 ohm. The length of the absorption layer is 100-1000 um, the reflectivity of the antireflection film is 0.03% -0.1%, and the reflectivity of the high-reflection film is 97% -99%.
2. A high speed photodetector structure as claimed in claim 1 wherein said anti-reflective coating is made of Si, SiO2、SiNx、SiNOx、Al2O3One or a combination of several membranes.
3. A high speed photodetector structure as in claim 1 wherein the highly reflective film is made of Si, SiO2，SiNx，SiNOx，Al2O3One or a combination of several membranes.
4. A method of fabricating a high speed photodetector, comprising the steps of:
1) putting an InP substrate into MOCVD equipment, and epitaxially growing a lower ohmic contact layer (02), a lower window layer (03), an absorption layer (04), an upper window layer (05) and an upper ohmic contact layer (06) on the InP substrate from bottom to top in sequence, wherein the resistivity of the InP substrate (01) is 0.8-2E8 ohm.cm, and the length of the absorption layer is 100-1000 um;
2) taking out the epitaxial wafer, and manufacturing the epitaxial wafer into a mesa structure by using a semiconductor chip manufacturing process;
3) evaporating an antireflection film (07) on a light incident surface of the mesa structure, and evaporating a high reflection film (08) on a light reflection surface, wherein the reflectivity of the antireflection film is 0.03-0.1%, and the reflectivity of the high reflection film is 97-99%;
4) and evaporating positive and negative electrodes of the detector, and thinning the InP substrate to form the high-speed photoelectric detector.
5. The manufacturing method of the high-speed photoelectric detector is characterized in that the antireflection film (07) and the high-reflection film (08) are evaporated by adopting a single atomic layer deposition system.
6. The method for manufacturing a high-speed photoelectric detector according to claim 4, wherein the antireflection film (07) and the high-reflection film (08) can be evaporated by one or more layers.
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