CN112670419A - Solar cell with two light receiving surfaces and preparation method and application thereof - Google Patents
Solar cell with two light receiving surfaces and preparation method and application thereof Download PDFInfo
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The invention is suitable for the technical field of photovoltaics, and provides a double-sided light-receiving solar cell, and a preparation method and application thereof. The invention effectively combines the advantages of the perovskite/perovskite laminated solar cell and the double-sided cell, can obviously improve the short-circuit current density of the cell, and further realizes higher photoelectric conversion efficiency.
Description
Technical Field
The invention belongs to the technical field of photovoltaics, and particularly relates to a solar cell with two light receiving sides, and a preparation method and application thereof.
Background
Organic-inorganic hybrid perovskite solar cells are drawing much attention internationally due to excellent photoelectric properties such as low cost, easy preparation and adjustable band gap, and the development is rapid, the photoelectric conversion efficiency of single-junction perovskite solar cells is improved from 3.8% in 2009 to 25.5% in 2020, and perovskite materials are also considered as the most potential light absorption materials of the next generation low-cost solar cells.
Currently, perovskite/perovskite two-end laminated solar cells are an effective way to break through the Shockley-Queisser limit of single-junction perovskite solar cells. In the perovskite/perovskite both-end laminated solar cell, the perovskite with a wide band gap is used as a top cell to absorb sunlight with a short wavelength part, the perovskite with a narrow band gap is used as a bottom cell to absorb sunlight with a long wavelength part, the utilization rate of a solar spectrum can be improved, the thermal relaxation loss of a current carrier in a single junction cell is reduced, and the photoelectric conversion efficiency is improved.
At present, the most main and key technical problems of the existing solar cell are as follows: the efficiency of the single-sided light receiving laminated cell is fixed, and the actual efficiency is low because the reflected light from the ground cannot be fully utilized in the actual application; the secondary problems include: 1) the single-sided light receiving laminated cell needs a metal back electrode which is covered completely, so that the cost is high; 2) the single-sided light receiving laminated cell cannot obtain larger short-circuit current density; 3) the metal of the full-coverage metal of the single-sided light-receiving laminated cell is easy to peel off in large-area preparation.
Therefore, it is urgently needed to design a manufacturing method of a double-sided light-receiving perovskite/perovskite tandem solar cell to obtain higher short-circuit current and further obtain higher photoelectric conversion efficiency of the solar cell.
Disclosure of Invention
An embodiment of the present invention is directed to a double-sided light receiving solar cell, which is to solve the problems in the background art.
The embodiment of the invention is realized in such a way that the double-sided light-receiving solar cell sequentially comprises a transparent conductive substrate, a first transmission layer, a wide-bandgap perovskite layer, a second transmission layer, a tunneling composite layer, a third transmission layer, a narrow-bandgap perovskite layer, a fourth transmission layer, a buffer layer, a transparent conductive layer and a back grid line electrode from the front side to the back side of light receiving.
As a preferable mode of the embodiment of the present invention, the transparent conductive substrate is any one of an indium tin oxide substrate, an indium tungsten oxide substrate, a fluorine-doped tin oxide substrate, an indium zinc oxide substrate, and an aluminum-doped zinc oxide substrate, but is not limited thereto.
As another preferable scheme of the embodiment of the present invention, the first transport layer is a hole transport layer, the second transport layer is an electron transport layer, the third transport layer is a hole transport layer, and the fourth transport layer is an electron transport layer;
or the first transport layer is an electron transport layer, the second transport layer is a hole transport layer, the third transport layer is an electron transport layer, and the fourth transport layer is a hole transport layer;
wherein the hole transport layer comprises a p-type semiconductor material; the electron transport layer comprises an n-type semiconductor material.
As another preferable solution of the embodiment of the present invention, the tunneling composite layer includes a metal layer and a dense layer;
wherein the metal layer comprises at least one of gold, palladium, silver, titanium, chromium, nickel, aluminum, copper, but is not limited thereto; the dense layer comprises an n-type semiconductor material or a p-type semiconductor material.
The metal layer can be a continuous metal film, or a metal nanoparticle film or a non-compact metal island structure. The metal layer can be prepared by deposition methods such as electron beam evaporation, thermal evaporation, magnetron sputtering, atomic layer deposition, spin coating, blade coating and the like. The dense layer may be prepared by a physical deposition method or a chemical deposition method. Physical deposition methods include, but are not limited to, vacuum evaporation, sputtering, ion beam deposition, pulsed laser deposition, and the like; chemical deposition methods include, but are not limited to, chemical vapor deposition, atomic layer deposition, sol-gel spin coating, and the like.
In another preferred embodiment of the present invention, the p-type semiconductor material is at least one of nickel oxide, molybdenum oxide, cuprous oxide, copper iodide, copper phthalocyanine, cuprous thiocyanate, redox graphene, poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ], 2',7,7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, poly 3, 4-ethylenedioxythiophene: polystyrene sulfonate, poly [ bis (4-phenyl) (4-butylphenyl) amine ], polyvinyl carbazole, but is not limited thereto.
As another preferable mode of the embodiment of the present invention, the n-type semiconductor material is at least one of titanium oxide, tin oxide, zinc oxide, fullerene, graphene, fullerene derivatives, and [6,6] -phenyl-C61-methyl butyrate, but is not limited thereto.
As another preferable aspect of the embodiment of the present invention, the buffer layer includes any one of molybdenum oxide, vanadium oxide, 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline, tin oxide, titanium oxide, and tungsten oxide, but is not limited thereto;
the purpose of the buffer layer design is to prevent damage to the underlying material during deposition of the transparent conductive film. The buffer layer can be prepared by deposition methods such as vacuum evaporation, magnetron sputtering, atomic layer deposition, chemical vapor deposition, ion beam deposition, pulsed laser deposition, spin coating, blade coating and the like.
The transparent conductive layer comprises at least one of a silver nanowire, a metal thin layer, an indium tin oxide film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film, a fluorine-doped tin oxide film, an indium tungsten oxide film and a graphene film, but is not limited thereto;
the transparent conducting layer is grown on the back of a light receiving surface and can be prepared by methods such as vacuum evaporation, magnetron sputtering, atomic layer deposition, chemical vapor deposition, ion beam deposition, pulsed laser deposition, spin coating, blade coating, 3D printing, spraying and the like. The transparent conductive layer is a key technology for reflecting light into the laminated cell.
The back gate line electrode includes at least one of gold, palladium, silver, titanium, chromium, nickel, aluminum, and copper, but is not limited thereto.
The purpose of the back grid line electrode design is to improve the conductivity of the transparent electrode without affecting the light reception on the backlight side. The back grid line electrode can be prepared by vacuum evaporation, sputtering, atomic layer deposition, 3D printing, screen printing, ink-jet printing and the like.
Another object of the embodiments of the present invention is to provide a method for manufacturing the above-mentioned double-sided light-receiving solar cell, which includes the following steps:
taking a transparent conductive substrate, and preparing a first transmission layer on the transparent conductive substrate;
depositing a layer of wide-band-gap perovskite on the first transmission layer to obtain a wide-band-gap perovskite layer;
preparing a second transport layer on the wide band gap perovskite layer;
preparing a tunneling composite layer on the second transmission layer;
preparing a third transmission layer on the tunneling composite layer;
depositing a layer of narrow-bandgap perovskite on the third transmission layer to obtain a narrow-bandgap perovskite layer;
preparing a fourth transmission layer on the narrow-bandgap perovskite layer;
preparing a buffer layer on the fourth transmission layer;
preparing a transparent conductive layer on the buffer layer;
and arranging a back grid line electrode on the transparent conducting layer to obtain the solar cell.
Another object of an embodiment of the present invention is to provide a solar cell manufactured by the above manufacturing method.
Another object of the embodiments of the present invention is to provide an application of the above solar cell in solar power generation.
The bifacial cell technology is a technology for improving the photoelectric conversion efficiency of a solar cell by effectively utilizing reflected light from the ground, which is not generally available in the conventional solar cell. The short circuit current density of current perovskite/perovskite two-terminal tandem solar cells is mainly limited by the single junction portion where the short circuit current density is small. Therefore, the perovskite/perovskite two-end laminated solar cell is introduced into the double-sided cell technology, so that the light absorption of the narrow-band-gap perovskite can be effectively enhanced, the short-circuit current density of the narrow-band-gap perovskite sub-cell is improved, meanwhile, the short-circuit current density of the wide-band-gap perovskite sub-cell can be improved by reducing the band gap of the wide-band-gap perovskite, and finally, the short-circuit current density of the laminated device can be greatly increased, so that the higher photoelectric conversion efficiency is obtained.
Compared with the prior art, the double-sided light-receiving solar cell provided by the embodiment of the invention has the following advantages: 1) the design of the transparent conducting layer and the grid line electrode is adopted to replace an all-metal covering layer, so that the material cost is greatly reduced; 2) fully utilizing reflected light from the ground; 3) the reflected light intensity is utilized to adjust the band gap of the wide band gap perovskite, so that the short circuit current density is greatly increased. The invention effectively combines the advantages of the perovskite/perovskite laminated solar cell and the double-sided cell, obviously improves the short-circuit current density of the cell and further realizes higher photoelectric conversion efficiency.
Drawings
Fig. 1 is a schematic structural diagram of a solar cell according to an embodiment of the present invention.
Fig. 2 is a cross-sectional scanning electron microscope image of the solar cell provided in embodiment 1 of the present invention.
Fig. 3 is a current density-voltage curve diagram of the solar cell provided in example 1 of the present invention.
In fig. 1 and 2, 1-transparent conductive substrate, 2-first transmission layer, 3-wide band gap perovskite layer, 4-second transmission layer, 5-tunneling composite layer, 6-third transmission layer, 7-narrow band gap perovskite layer, 8-fourth transmission layer, 9-buffer layer, 10-transparent conductive layer, 11-back grid line electrode, a-light receiving front surface and B-light receiving back surface.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
As shown in fig. 1, this embodiment provides a double-sided light receiving solar cell, which includes, in order from a light receiving front side a to a light receiving back side B, a transparent conductive substrate 1, a first transport layer 2, a wide bandgap perovskite layer 3, a second transport layer 4, a tunneling composite layer 5, a third transport layer 6, a narrow bandgap perovskite layer 7, a fourth transport layer 8, a buffer layer 9, a transparent conductive layer 10, and a back grid line electrode 11.
Specifically, the preparation method of the solar cell comprises the following steps:
s1, taking an indium tin oxide substrate as a transparent conductive substrate 1, and preparing a layer of poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] with the wavelength of about 20nm on the transparent conductive substrate 1 as a first transmission layer 2, wherein the first transmission layer 2 is a hole transmission layer.
S2, depositing a layer of wide band gap perovskite with a thickness of about 300nm on the first transport layer 2, resulting in a wide band gap perovskite layer 3.
S3, preparing a fullerene layer having a thickness of about 20nm as a second transport layer 4 on the wide band gap perovskite layer 3 by thermal evaporation, the second transport layer 4 being an electron transport layer.
And S4, growing a layer of tin oxide with the thickness of about 30nm on the second transmission layer 4 as a compact layer by using an atomic layer deposition method, and evaporating gold with the thickness of 1nm on the compact layer by adopting thermal evaporation to form a metal layer, thereby obtaining the tunneling composite layer 5.
S5, preparing a layer of poly (3, 4-ethylenedioxythiophene) polystyrene sulfonate as a third transport layer 6 on the tunneling composite layer 5, wherein the third transport layer 6 is a hole transport layer.
S6, depositing a layer of narrow bandgap perovskite having a thickness of about 700nm on the third transport layer 6, resulting in a narrow bandgap perovskite layer 7.
S7, preparing a layer of fullerene with a thickness of about 30nm as a fourth transport layer 8 by thermal evaporation on the narrow bandgap perovskite layer 7, the fourth transport layer 8 being an electron transport layer.
S8, growing a layer of tin oxide of about 20nm thickness as a buffer layer 9 on the fourth transport layer 8 using atomic layer deposition.
S9, a layer of indium tin oxide with a thickness of about 180nm is grown on the buffer layer 9 by sputtering as the transparent conductive layer 10.
And S10, evaporating a layer of copper with the thickness of 150nm on the transparent conducting layer 10 by thermal evaporation to serve as a back grid line electrode 11, and thus obtaining the double-sided light-receiving perovskite/perovskite laminated solar cell with the p-i-n structure.
Example 2
As shown in fig. 1, this embodiment provides a double-sided light receiving solar cell, which includes, in order from a light receiving front side a to a light receiving back side B, a transparent conductive substrate 1, a first transport layer 2, a wide bandgap perovskite layer 3, a second transport layer 4, a tunneling composite layer 5, a third transport layer 6, a narrow bandgap perovskite layer 7, a fourth transport layer 8, a buffer layer 9, a transparent conductive layer 10, and a back grid line electrode 11.
Specifically, the preparation method of the solar cell comprises the following steps:
s1, taking an indium tungsten oxide substrate as a transparent conductive substrate 1, and preparing a layer of about 20nm 2,2',7,7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene as a first transport layer 2 on the transparent conductive substrate 1, wherein the first transport layer 2 is a hole transport layer.
S2, depositing a layer of wide band gap perovskite with a thickness of about 300nm on the first transport layer 2, resulting in a wide band gap perovskite layer 3.
S3, preparing a layer of graphene with a thickness of about 20nm as a second transport layer 4 on the wide band gap perovskite layer 3 by thermal evaporation, wherein the second transport layer 4 is an electron transport layer.
And S4, growing a layer of zinc oxide with the thickness of about 30nm on the second transmission layer 4 as a compact layer by using an atomic layer deposition method, and evaporating palladium with the thickness of 2nm on the compact layer by adopting thermal evaporation to form a metal layer, thereby obtaining the tunneling composite layer 5.
And S5, preparing a layer of polyvinyl carbazole on the tunneling composite layer 5 to serve as a third transport layer 6, wherein the third transport layer 6 is a hole transport layer.
S6, depositing a layer of narrow bandgap perovskite having a thickness of about 700nm on the third transport layer 6, resulting in a narrow bandgap perovskite layer 7.
S7, preparing a layer of [6,6] -phenyl-C61-methyl butyrate with the thickness of about 30nm as a fourth transport layer 8 on the narrow-bandgap perovskite layer 7, wherein the fourth transport layer 8 is an electron transport layer.
S8, growing a layer of molybdenum oxide of about 20nm thickness as a buffer layer 9 on the fourth transport layer 8 using atomic layer deposition.
S9, growing a layer of silver nanowire with a thickness of about 180nm on the buffer layer 9 as the transparent conductive layer 10.
S10, evaporating a layer of silver with the thickness of 150nm on the transparent conducting layer 10 by thermal evaporation to serve as the back grid line electrode 11, and obtaining the double-sided light-receiving perovskite/perovskite laminated solar cell with the p-i-n structure.
Example 3
As shown in fig. 1, this embodiment provides a double-sided light receiving solar cell, which includes, in order from a light receiving front side a to a light receiving back side B, a transparent conductive substrate 1, a first transport layer 2, a wide bandgap perovskite layer 3, a second transport layer 4, a tunneling composite layer 5, a third transport layer 6, a narrow bandgap perovskite layer 7, a fourth transport layer 8, a buffer layer 9, a transparent conductive layer 10, and a back grid line electrode 11.
Specifically, the preparation method of the solar cell comprises the following steps:
s1, taking the fluorine-doped tin oxide substrate as the transparent conductive substrate 1, and preparing a layer of nickel oxide with the thickness of about 20nm on the transparent conductive substrate 1 as the first transmission layer 2, wherein the first transmission layer 2 is a hole transmission layer.
S2, depositing a layer of wide band gap perovskite with a thickness of about 300nm on the first transport layer 2, resulting in a wide band gap perovskite layer 3.
S3, preparing a layer of titanium oxide having a thickness of about 20nm as the second transport layer 4 on the wide band gap perovskite layer 3, the second transport layer 4 being an electron transport layer.
And S4, growing a layer of copper iodide with the thickness of about 30nm on the second transmission layer 4 to serve as a compact layer, and evaporating chromium with the thickness of 2nm on the compact layer by adopting thermal evaporation to form a metal layer, so as to obtain the tunneling composite layer 5.
S5, preparing a layer of cuprous thiocyanate on the tunneling composite layer 5 to serve as a third transport layer 6, wherein the third transport layer 6 is a hole transport layer.
S6, depositing a layer of narrow bandgap perovskite having a thickness of about 700nm on the third transport layer 6, resulting in a narrow bandgap perovskite layer 7.
S7, preparing a layer of fullerene with a thickness of about 30nm as a fourth transport layer 8 by thermal evaporation on the narrow bandgap perovskite layer 7, the fourth transport layer 8 being an electron transport layer.
S8, growing a layer of tin oxide of about 20nm thickness as a buffer layer 9 on the fourth transport layer 8 using atomic layer deposition.
S9, growing a layer of indium zinc oxide film with a thickness of about 180nm on the buffer layer 9 as the transparent conductive layer 10.
And S10, evaporating a layer of aluminum with the thickness of 150nm on the transparent conducting layer 10 by thermal evaporation to be used as a back grid line electrode 11, and thus obtaining the double-sided light-receiving perovskite/perovskite laminated solar cell with the p-i-n structure.
Example 4
As shown in fig. 1, this embodiment provides a double-sided light receiving solar cell, which includes, in order from a light receiving front side a to a light receiving back side B, a transparent conductive substrate 1, a first transport layer 2, a wide bandgap perovskite layer 3, a second transport layer 4, a tunneling composite layer 5, a third transport layer 6, a narrow bandgap perovskite layer 7, a fourth transport layer 8, a buffer layer 9, a transparent conductive layer 10, and a back grid line electrode 11.
Specifically, the preparation method of the solar cell comprises the following steps:
s1, taking the indium zinc oxide substrate as the transparent conductive substrate 1, and preparing a layer of fullerene with a thickness of about 20nm as the first transmission layer 2 on the transparent conductive substrate 1 by thermal evaporation, wherein the first transmission layer 2 is an electron transmission layer.
S2, depositing a layer of wide band gap perovskite with a thickness of about 300nm on the first transport layer 2, resulting in a wide band gap perovskite layer 3.
S3, preparing a layer of poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] of about 20nm as a second transport layer 4 on the wide band gap perovskite layer 3, wherein the second transport layer 4 is a hole transport layer.
And S4, growing a layer of cuprous oxide with the thickness of about 30nm on the second transmission layer 4 by using an atomic layer deposition method to serve as a compact layer, and evaporating gold with the thickness of 1nm on the compact layer by adopting thermal evaporation to form a metal layer to obtain the tunneling composite layer 5.
S5, preparing a layer of fullerene with a thickness of about 30nm as the third transport layer 6 on the tunneling composite layer 5 by thermal evaporation, wherein the third transport layer 6 is an electron transport layer.
S6, depositing a layer of narrow bandgap perovskite having a thickness of about 700nm on the third transport layer 6, resulting in a narrow bandgap perovskite layer 7.
S7, preparing a layer of poly (3, 4-ethylenedioxythiophene) on the narrow-bandgap perovskite layer 7, wherein polystyrene sulfonate is used as a fourth transport layer 8, and the fourth transport layer 8 is a hole transport layer.
S8, growing a layer of 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline with the thickness of about 20nm on the fourth transmission layer 8 to serve as a buffer layer 9.
S9, growing a gallium-doped zinc oxide film with a thickness of about 180nm on the buffer layer 9 as the transparent conductive layer 10.
And S10, evaporating a layer of copper with the thickness of 150nm on the transparent conducting layer 10 by thermal evaporation to serve as a back grid line electrode 11, and thus obtaining the double-sided light-receiving perovskite/perovskite laminated solar cell with the n-i-p structure.
Example 5
As shown in fig. 1, this embodiment provides a double-sided light receiving solar cell, which includes, in order from a light receiving front side a to a light receiving back side B, a transparent conductive substrate 1, a first transport layer 2, a wide bandgap perovskite layer 3, a second transport layer 4, a tunneling composite layer 5, a third transport layer 6, a narrow bandgap perovskite layer 7, a fourth transport layer 8, a buffer layer 9, a transparent conductive layer 10, and a back grid line electrode 11.
Specifically, the preparation method of the solar cell comprises the following steps:
s1, taking the aluminum-doped zinc oxide substrate as the transparent conductive substrate 1, and preparing a layer of fullerene with the thickness of about 20nm on the transparent conductive substrate 1 by thermal evaporation to be used as the first transmission layer 2, wherein the first transmission layer 2 is an electron transmission layer.
S2, depositing a layer of wide band gap perovskite with a thickness of about 300nm on the first transport layer 2, resulting in a wide band gap perovskite layer 3.
S3, preparing a layer of poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ] of about 20nm as a second transport layer 4 on the wide band gap perovskite layer 3, wherein the second transport layer 4 is a hole transport layer.
And S4, growing a layer of copper phthalocyanine with the thickness of about 30nm on the second transmission layer 4 to serve as a compact layer, and evaporating chromium with the thickness of 2nm on the compact layer by adopting thermal evaporation to form a metal layer, so as to obtain the tunneling composite layer 5.
S5, preparing a layer of fullerene with a thickness of about 30nm as the third transport layer 6 on the tunneling composite layer 5 by thermal evaporation, wherein the third transport layer 6 is an electron transport layer.
S6, depositing a layer of narrow bandgap perovskite having a thickness of about 700nm on the third transport layer 6, resulting in a narrow bandgap perovskite layer 7.
S7, preparing a layer of poly (3, 4-ethylenedioxythiophene) on the narrow-bandgap perovskite layer 7, wherein polystyrene sulfonate is used as a fourth transport layer 8, and the fourth transport layer 8 is a hole transport layer.
S8, growing a layer of tungsten oxide of about 20nm thickness as a buffer layer 9 on the fourth transport layer 8 using atomic layer deposition.
S9, an indium tungsten oxide film having a thickness of about 180nm is grown on the buffer layer 9 by sputtering as the transparent conductive layer 10.
And S10, evaporating a layer of copper with the thickness of 150nm on the transparent conducting layer 10 by thermal evaporation to serve as a back grid line electrode 11, and thus obtaining the double-sided light-receiving perovskite/perovskite laminated solar cell with the n-i-p structure.
Wherein, a scanning electron microscope image of the solar cell prepared in the above example 1 is shown in fig. 2, a current density-voltage curve is shown in fig. 3, and as can be seen from fig. 3, when a single side of the perovskite/perovskite tandem solar cell is subjected to light, the photoelectric conversion efficiency is 25.8%; after the double-sided battery technology is introduced, the short-circuit current density is obviously improved under the condition that the designed reflectivity is 20%, and the photoelectric conversion efficiency of the battery is improved to 31%; the perovskite/perovskite tandem solar cell is introduced with the double-sided cell technology, so that higher short-circuit current is realized, and higher photoelectric conversion efficiency is further obtained.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may contain only a single embodiment, and such description is for clarity only, and those skilled in the art should integrate the description, and the embodiments may be combined as appropriate to form other embodiments understood by those skilled in the art.
Claims (10)
1. The solar cell capable of receiving light on two sides is characterized by sequentially comprising a transparent conductive substrate, a first transmission layer, a wide-band-gap perovskite layer, a second transmission layer, a tunneling composite layer, a third transmission layer, a narrow-band-gap perovskite layer, a fourth transmission layer, a buffer layer, a transparent conductive layer and a back grid line electrode from the front side to the back side of the light receiving surface.
2. The double-sided light-receiving solar cell according to claim 1, wherein the transparent conductive substrate is any one of an indium tin oxide substrate, an indium tungsten oxide substrate, a fluorine-doped tin oxide substrate, an indium zinc oxide substrate, and an aluminum-doped zinc oxide substrate.
3. The bifacial light receiving solar cell of claim 1, wherein the first transport layer is a hole transport layer, the second transport layer is an electron transport layer, the third transport layer is a hole transport layer, and the fourth transport layer is an electron transport layer;
or the first transport layer is an electron transport layer, the second transport layer is a hole transport layer, the third transport layer is an electron transport layer, and the fourth transport layer is a hole transport layer;
wherein the hole transport layer comprises a p-type semiconductor material; the electron transport layer comprises an n-type semiconductor material.
4. The bifacial light receiving solar cell of claim 1, wherein the tunneling composite layer comprises a metal layer and a dense layer;
wherein the metal layer comprises at least one of gold, palladium, silver, titanium, chromium, nickel, aluminum and copper; the dense layer comprises an n-type semiconductor material or a p-type semiconductor material.
5. The bifacial light receiving solar cell of claim 3 or 4, wherein the p-type semiconductor material is at least one of nickel oxide, molybdenum oxide, cuprous oxide, copper iodide, copper phthalocyanine, cuprous thiocyanate, redox graphene, poly [ bis (4-phenyl) (2,4, 6-trimethylphenyl) amine ], 2',7,7' -tetrakis [ N, N-bis (4-methoxyphenyl) amino ] -9,9' -spirobifluorene, poly 3, 4-ethylenedioxythiophene, polystyrene sulfonate, poly [ bis (4-phenyl) (4-butylphenyl) amine ], polyvinyl carbazole.
6. The bifacial light receiving solar cell of claim 3 or 4, wherein the n-type semiconductor material is at least one of titanium oxide, tin oxide, zinc oxide, fullerene, graphene, fullerene derivatives, [6,6] -phenyl-C61-methyl butyrate.
7. The bifacial light receiving solar cell of claim 1, wherein the buffer layer comprises any one of molybdenum oxide, vanadium oxide, 2, 9-dimethyl-4, 7-biphenyl-1, 10-phenanthroline, tin oxide, titanium oxide, tungsten oxide;
the transparent conductive layer comprises at least one of silver nanowires, a metal thin layer, an indium tin oxide film, an aluminum-doped zinc oxide film, a gallium-doped zinc oxide film, a fluorine-doped tin oxide film, an indium tungsten oxide film and a graphene film;
the back grid line electrode comprises at least one of gold, palladium, silver, titanium, chromium, nickel, aluminum and copper.
8. A method for manufacturing a bifacial light receiving solar cell according to any one of claims 1 to 7, comprising the steps of:
taking a transparent conductive substrate, and preparing a first transmission layer on the transparent conductive substrate;
depositing a layer of wide-band-gap perovskite on the first transmission layer to obtain a wide-band-gap perovskite layer;
preparing a second transport layer on the wide band gap perovskite layer;
preparing a tunneling composite layer on the second transmission layer;
preparing a third transmission layer on the tunneling composite layer;
depositing a layer of narrow-bandgap perovskite on the third transmission layer to obtain a narrow-bandgap perovskite layer;
preparing a fourth transmission layer on the narrow-bandgap perovskite layer;
preparing a buffer layer on the fourth transmission layer;
preparing a transparent conductive layer on the buffer layer;
and arranging a back grid line electrode on the transparent conducting layer to obtain the solar cell.
9. A solar cell fabricated according to the method of claim 8.
10. Use of a solar cell according to any one of claims 1 to 7 or 9 for solar power generation.
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