CN1126647A - Solder paste for ball grid array - Google Patents
Solder paste for ball grid array Download PDFInfo
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- CN1126647A CN1126647A CN95116335A CN95116335A CN1126647A CN 1126647 A CN1126647 A CN 1126647A CN 95116335 A CN95116335 A CN 95116335A CN 95116335 A CN95116335 A CN 95116335A CN 1126647 A CN1126647 A CN 1126647A
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- tin
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- 229910000679 solder Inorganic materials 0.000 title claims description 84
- 239000000843 powder Substances 0.000 claims abstract description 93
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 91
- 239000000956 alloy Substances 0.000 claims abstract description 91
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910052709 silver Inorganic materials 0.000 claims abstract description 21
- 239000004332 silver Substances 0.000 claims abstract description 21
- 238000002156 mixing Methods 0.000 claims abstract description 5
- 239000006071 cream Substances 0.000 claims abstract description 3
- 239000000203 mixture Substances 0.000 claims description 26
- 238000010992 reflux Methods 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 16
- 230000004907 flux Effects 0.000 claims description 9
- 239000007791 liquid phase Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000007790 solid phase Substances 0.000 abstract description 2
- 238000005219 brazing Methods 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 238000005476 soldering Methods 0.000 abstract 1
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 14
- 239000011159 matrix material Substances 0.000 description 11
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 5
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 4
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- KDYFGRWQOYBRFD-UHFFFAOYSA-N succinic acid Chemical compound OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 4
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 4
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000001361 adipic acid Substances 0.000 description 3
- 235000011037 adipic acid Nutrition 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 3
- 229940088601 alpha-terpineol Drugs 0.000 description 3
- -1 amine salt Chemical class 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- PDBMKOUAWURVBE-UHFFFAOYSA-N 2-methyl-2-(2-methylpentan-2-yloxy)pentane Chemical compound CCCC(C)(C)OC(C)(C)CCC PDBMKOUAWURVBE-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000012190 activator Substances 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 238000003556 assay Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 2
- POULHZVOKOAJMA-UHFFFAOYSA-M dodecanoate Chemical compound CCCCCCCCCCCC([O-])=O POULHZVOKOAJMA-UHFFFAOYSA-M 0.000 description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N ferric oxide Chemical compound O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 229940070765 laurate Drugs 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000001384 succinic acid Substances 0.000 description 2
- 239000013008 thixotropic agent Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 206010016275 Fear Diseases 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical class C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- 238000006253 efflorescence Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012188 paraffin wax Substances 0.000 description 1
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical class CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 description 1
- 206010037844 rash Diseases 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
The invention relates to a high quality protuberance which is used for a ball grid array and can be formed with soldering tin creams generated by mixing a brazing agent and alloy powder in a high manufacturing efficiency. The alloy powder consists of two or more alloy powders of different contents, and the liquid phase line temperature of each alloy powder is less than the reflowing temperature. And at least one alloy powder has 10 DEG C or larger difference between the liquid phase line and a solid phase line. Average contents of the whole alloy powders are 58 to 65 percent (weight) of tin and 35 to 42 percent (weight) of lead; or 60 to 65 percent (weight) of tin, 34 to 38 percent (weight) of lead and 1 to 3 percent (weight) of silver.
Description
The present invention relates to a kind of solder(ing) paste and a kind of ball grid array that utilizes this solder(ing) paste on ball grid array, to form protuberance that is used for the formation protuberance of ball grid array.
In recent years after integrated on a large scale (LSIs) with large-size and fair speed promotes, the semiconductor subassembly number of lead wires that become increases and narrower wire pitch.Though assembly building is made apart from the square flat assembly (QFPs) that is 0.5mm is a large amount of, but because lead distortion and bad welding, the lead of welding and by the cross-over connection between the narrow lead that causes of spacing not for example, fears are entertained that assembly building is apart from increasing cost for 0.4mm and 0.3mm.
So ball grid array (BGA) 3 has grown up.Ball grid array is a surface assembling type semiconductor subassembly as shown in Figure 1, and here Qiu Xing bump is formed on different types of matrix.Because the lead of this spherical solder (spherical solder protuberance 2) is configured on the matrix 1 by two dimensional directions, compares the wire pitch that broad is provided with the QFP assembly like this, and has got rid of solder balls deform.So comparing the weld defect expectation with the QFP assembly when a large amount of production can sharply descend.
At present, the spherical solder protuberance that is used for BGA forms by predetermined solder ball being welded on the pedestal on the matrix.But after they were provided to the position of regulation, the dislocation that prevents solder ball was inconvenient.And this method needs a large amount of special clamping devices and relates to because the high producing cost of expensive solder ball.
To background technology like this, a kind of novel processing method is used now more and more, is exactly the printing by solder(ing) paste and refluxes form spherical bump on ball grid array matrix.In this method, scolder has fallen and can have been formed by the printing and the reflow method of the solder(ing) paste of having used in the surface is fixing.So general printing machine and reflow ovens can be employed and device or clamping device are not essential especially.And solder(ing) paste is more cheap than solder ball.Therefore new processing method is supposed to cause lower producing cost.
Yet, utilizing general solder(ing) paste printing and backflow on ball grid array matrix, to form in the said method of spherical bump, the defective of having only ball grid array just to have results from some balls and is formed on outside the special base position.
Form the solder(ing) paste that is used for ball grid array of protuberance when the present invention relates to the bump that on matrix, forms sphere when printing and backflow by solder(ing) paste, ball grid array does not contain defective, and relates to a kind of ball grid array that utilizes said solder(ing) paste to form protuberance on ball grid array.
Inventor of the present invention has carried out relating to the extensive studies of solder(ing) paste, and these solder(ing) pastes will can not cause the defective of having only ball grid array just to have, for example by the printing of solder(ing) paste and the dislocation of the formed ball that refluxes.As a result, the inventor has been found that using solder(ing) paste of the present invention can get rid of these shortcomings.
That is to say, the invention provides a kind of solder(ing) paste that is used for the formation protuberance of ball grid array, it is by solder flux and contain that two or more mixtures with alloy powder of heterogeneity solder alloy powder form, each of said solder powder has the liquidus temperature that is lower than reflux temperature, at least said solder alloy powder a kind of has 10 ℃ or bigger difference between its liquidus curve and solidus, the average assay of alloy powder is that the percentage by weight of tin is that 58-65% and plumbous percentage by weight are 35-42%, perhaps the percentage by weight of tin is 60-65%, and plumbous percentage by weight is that the percentage by weight of 34-38% and silver is 1-3%.
The present invention also provide a kind of utilization as mentioned above solder(ing) paste on ball array, form the protuberance ball array.
Fig. 1 is an embodiment plane of ball grid array of the present invention;
Fig. 2 represents along the sectional view of A-A ' part;
Fig. 3 represents an embodiment of semiconductor subassembly;
Fig. 4 is the sectional view in when printing in general printing process;
Fig. 5 is the sectional view during printing when forming the ball grid array protuberance by printing; With
Fig. 6 represents the solder ball that misplaced.
As represent among Fig. 4 the solder(ing) paste printing in solder(ing) paste 9 be printed onto on each pedestal 8 of matrix and cover almost identical area. Forming for ball grid array in the situation of protuberance, must provide the solder(ing) paste of larger volume, because must form the protuberance greater than the sphere of pedestal. Like this, as shown in Figure 5, be necessary to make significantly projection from the pedestal 8 of printed solder paste 9. After the backflow, the position beyond pedestal forms some solder balls as shown in Figure 6, and this is the problem that ball grid array just has. This phenomenon is considered to be attributable to when the solder(ing) paste that only is comprised of the alloy powder near eutectic composition during in the border of pedestal melted by heat, the unfused part of solder(ing) paste remains solid-state powder form, therefore can not keep its shape, this just means, when ball formed, the cream of melt portions was not absorbed in the liquid phase part of at first fusing. If use solder(ing) paste of the present invention, the ball that then can not occur misplacing. Suppose, because said solder(ing) paste comprises the alloy powder with melting region, when heat in the external world, this solder(ing) paste has the zone of a solid phase and liquid phase coexistence, even in the molten part of solder(ing) paste, liquid phase is partly arranged, because the surface tension of this liquid phase makes it can keep certain shape and guarantee correctly to form ball on pedestal.
Since, when utilizing solder(ing) paste to form the ball grid array protuberance, think that the ball dislocation is owing to above-mentioned mechanism occurs, just be necessary to guarantee that at least a alloy powder has difference between its solidus and its liquidus curve, work in order to prevent above-mentioned mechanism. This difference should be at least 10 ℃ or more, preferably 20 ℃ or more.
In the present invention, each alloy powder in the solder(ing) paste should be that liquidus temperature is lower than reflux temperature. Its reason is, if liquidus temperature is higher than reflux temperature, can not proceed smoothly towards the alloying process of average composition, and necessary reflux temperature or the prolongation return time of improving that become, a large amount of heat loads give semiconductor stamen sheet and matrix. And alloying is unsatisfactorily at general reflux temperature with finish in period, and scolder has inadequate scolder gloss and is lower than the mechanical strength of average solder component as a result. Therefore, the present invention uses the alloy powder with the liquidus temperature that is lower than reflux temperature.
(percentage by weight of tin is 60-65% for so-called eutectic solder (average composition: the percentage by weight of tin is that 58-65% and plumbous percentage by weight are 35-42%) or the scolder of so-called argentiferous, plumbous percentage by weight is 34-38%, with the percentage by weight of silver be 1-3%) why be applied in the present invention, be because they can both provide good wetability and high mechanical strength as alloy. These compositions also are widely used in the combination of electronic component. The reflux temperature of these type scolders generally in 210 ℃ to 240 ℃ excursion, particularly about 230 ℃. Percentage by weight with regard to tin is that 58-65% and plumbous percentage by weight are the general composition of 35-42%, the percentage by weight that requires mixing tin is that 45-60% and plumbous percentage by weight are the alloy powder of 40-55%, with a kind of percentage by weight of tin be that 70-100% and plumbous percentage by weight are the alloy powder of 0-30%, can be so that the difference that solder composition has the liquidus temperature that is no more than reflux temperature and has liquidus curve and a solidus be 10 ℃ or larger. Tin can be used alone because its fusing point is 232 ℃ in this case.
More the situation of Xi Wanging is that a kind of percentage by weight of tin is that 50-60% and plumbous percentage by weight are that the alloy powder of 40-50% and a kind of percentage by weight of tin are that 70-85% and plumbous percentage by weight are the mixture of the alloy powder of 15-30%.The weight percentage that also can be 58-65% and lead with a kind of weight percentage of tin is that the alloy powder of 35-42% mixes with above-mentioned alloy powder mixture.The percentage by weight that is adjusted to tin when average assay is 60-65%, plumbous percentage by weight is that the percentage by weight of 34-38% and silver is when being 1-3%, this will consider that the percentage by weight of liquidus temperature mixing tin is 45-60%, plumbous percentage by weight is that the percentage by weight of 40-55% and silver is the alloy powder of 0-3%, with a kind of percentage by weight of tin be 70-100%, plumbous percentage by weight is that the percentage by weight of 0-30% and silver is the alloy powder of 0-3%.The percentage by weight that hope better mixes tin is 50-60%, plumbous percentage by weight is that the percentage by weight of 40-50% and silver is the alloy powder of 0-3%, with a kind of tin percentage by weight be 70-85%, plumbous percentage by weight is that the percentage by weight of 15-30% and silver is the alloy powder of 0-3%.Also can be further be 60-65% with the percentage by weight of said mixture and tin, plumbous percentage by weight is that the percentage by weight of 34-38% and silver is that a kind of alloy powder of 1-3% mixes.
Except that the present invention, other invention has disclosed two classes or more alloy powder with different components and has mixed solder(ing) paste.(for example, the patent disclosure Nos.Hei3-13952 of Japanese unexamined, Sho57-66993, Sho 63-149094, Sho 63-154288, Hei 1-241395, Hei 1-271094, Hei 1-266987, Hei 2-117794, Hei 2-211995, Hei 4-22595 and Hei 4-29365.)
Yet most of eutectic solder that contains bismuth or indium and solder composition of the present invention that discloses in their working example has suitable difference.Though the included working example of the patent disclosure Sho 63-154288 of Japanese unexamined and Hei 2-117794 does not contain bismuth or indium, the liquidus temperature of each solder alloy is higher than reflux temperature, so these inventions and the present invention distinguish to some extent.Other invention does not comprise any explanation of the formation that relates to the protuberance that is used for ball grid array.
And, a kind of like this application of solder(ing) paste all needs high reflux temperature and long return time, resulting is not high heat load on semiconductor stamen sheet and matrix, is exactly poor gloss, low wetability and not enough intensity, and this is owing to incomplete alloying.So have only solder(ing) paste of the present invention can zero defect ground for ball grid array forms high-quality protuberance.Simultaneously, it is disadvantageous that the alloy powder of application has too high liquidus temperature, and this alloy powder that just requires to utilize will have high tin content so that adjust average composition.As for this composition, the efflorescence that should be noted that this powder-product is the process of a difficulty, and resulting solder(ing) paste is unsettled, and this is active because of powder surface, easily and flux reaction.Any alloy powder of using among the present invention is not specially limited shape and the particle size with it.Shape can be sphere or random, and particle size or smaller also being employed of about 73 μ (200 order).
The solder flux of solder(ing) paste of the present invention comprises resin, solvent, thixotropic agent, activator and other additive.These materials are used as the solder flux of solder(ing) paste at large and have no particular limits.
The example of the resin that said solder(ing) paste is used comprises rosin such as natural rosin and sex change rosin, water-soluble resin and polymer.The example of solvent comprises alcohols, dihydroxylic alcohols and ethers.The example of thixotropic agent comprises castor oil, paraffin, petrochemical polymer and acid amides.The example of activator comprises monocarboxylic acid, two carboxylic acid, amine, acid amides, acid imide, amine salt and halogen.The example of other additive comprises thickener, surfactant, flowing regulator, anti-corrosion additive and antifoaming agent.
The percentage by weight of the solder flux in said solder(ing) paste has no particular limits.But in the printing coating, 9-12% (weight) scope is general.Solids content in the solder flux, rosin for example is to have no particular limits and wide scope 10-70% (weight) arranged.
According to the present invention, the matrix type of ball grid array has no particular limits.For example, printed substrate (epoxy-glass, phenol-paper etc.), flexible board, ceramic plate and TAB matrix can be employed.Semiconductor chip is connected to the one side of the electric connection that has circuit by lead connection or bump.At another side, the scolder pedestal is pressed the array setting.Said solder(ing) paste utilizes printing machine to adopt template or mesh screen to be coated on each pedestal, then heat fused in reflow ovens.By this method, high-quality annular solder protuberance can form.The atmosphere of reflow ovens does not have special restriction, can application of air, and inactive atmosphere such as nitrogen or reducing atmosphere are as hydrogen and acid.
Embodiment
For embodiment 1 to 6 and comparative example 1 and 2, prepare solder(ing) paste by kneading in following ratio.The solder(ing) paste of Huo Deing is printed and by refluxing and 230 ℃ of fusings like this, forms protuberance and produces ball grid array.The result is as shown in table 1.
Table 1
| The percentage of defective non-bulbous protrusions (on a ball grid battle array, surpassing 3,240 positions) | |
| |
????0.0 |
| |
????0.0 |
| |
????0.0 |
| Embodiment 4 | ????0.0 |
| Embodiment 5 | ????0.0 |
| Embodiment 6 | ????0.0 |
| Comparative example 1 | ????0.8 |
| Comparative example 2 | ????1.2 |
212 ℃ of liquidus temperatures, 183 ℃ of solidus temperatures,
Size 22-53 μ m alloy powder B (80% (weight) Sn-20% (weight) Pb) 30.0
202 ℃ of liquidus temperatures, 183 ℃ of solidus temperatures,
Size 22-53 μ m newtrex 3.0 disproportionated rosins 2.0 diglycol monotertiary hexyl ether 3.9 rilanit specials 0.5 cyclo-hexylamine HBr 0.1 adipic acid 0.5
202 ℃ of liquidus temperatures, 183 ℃ of solidus temperatures,
Size 22-45 μ m alloy powder B, (80%, (weight) Sn-20, (weight) Pb) 47.0 newtrexes, 3.0 disproportionated rosins, 2.2 diglycol monotertiary butyl ethers, 3.9 rilanit specials, 0.5 cyclo-hexylamine HBr, 0.1 adipic acid 0.3
201 ℃ of liquidus temperatures, 183 ℃ of solidus temperatures,
Size 22-38 μ m alloy powder E (70% (weight) Sn-30% (weight) Pb) 40.5
190 ℃ of liquidus temperatures, 183 ℃ of solidus temperatures,
Size 22-38 μ m alloy powder F (63% (weight) Sn-37% (weight) Pb) 9.0
183 ℃ of eutectic temperatures, size 22-45 μ m newtrex 2.0 disproportionated rosins 1.0 propane diols list phenyl ethers 5.9 rilanit specials 0.7 isopropylamine HBr 0.1 succinic acid 0.3
Embodiment 4 umbers (weight) alloy powder G (46% (weight) Sn-51% 30.0
(weight) Pb-3% (weight) Ag)
200 ℃ of liquidus temperatures, 178 ℃ of solidus temperatures,
Size 10-30 μ m alloy powder H (80% (weight) Sn-18% 60.0
(weight) Pb-2% (weight) Ag)
200 ℃ of liquidus temperatures, 178 ℃ of solidus temperatures,
Size 10-30 μ m newtrex 3.4 disproportionated rosins 3.0 α-terpineol 2.5 rilanit specials 0.5 cyclo-hexylamine HBr 0.1 laurate 0.5
Embodiment 5 umbers (weight) alloy powder I (50% (weight) Sn-48% 45.0
(weight) Pb-2% (weight Ag)
210 ℃ of liquidus temperatures, 178 ℃ of solidus temperatures,
Size 22-45 μ m alloy powder H (80% (weight) Sn-18% 45.0
(weight) Pb-2% (weight) Ag) newtrex 2.4 disproportionated rosins 2.4 α-terpineol 4.1 rilanit specials 0.5 cyclo-hexylamine HBr 0.1 laurate 0.5
Embodiment 6 umbers (weight) alloy powder J (55% (weight) Sn-43% 35.0
(weight) Pb-2% (weight) Ag)
199 ℃ of liquidus temperatures, 178 ℃ of solidus temperatures,
Size 22-45 μ m alloy powder K (70% (weight) Sn-28% 35.0
(weight) Pb-2% (weight) Ag)
200 ℃ of liquidus temperatures, 178 ℃ of solidus temperatures,
Size 22-45 μ m alloy powder L (62% (weight) Sn-36% 20.0
(weight) Pb-2% (weight) Ag)
178 ℃ of eutectic temperatures, size 22-45 μ m Foral 6.0 diglycol monotertiary butyl ethers 2.9 rilanit specials 0.5 cyclo-hexylamine HBr 0.1 sad 0.5
Comparative example 1 umber, (weight) alloy powder F, (63%, (weight) Sn-37%, (weight) Pb) 90.0 Forals, 6.0 α-terpineol 2.9 rilanit specials 0.5 cyclo-hexylamine HBr 0.1 succinic acid 0.5
Comparative example 2 umbers (weight) alloy powder L (62% (weight) Sn-36% 90.0
(weight) Pb-2%, (weight) Ag) newtrex 2.0 disproportionated rosins 4.0 diglycol monotertiary hexyl ether 2.9 rilanit specials 0.5 cyclo-hexylamine HBr 0.1 adipic acid 0.5
From above explanation as can be seen, the high-quality protuberance that is used for ball grid array can utilize the solder(ing) paste that is produced by solder flux and alloy powder mixing to form with high yield, this alloy powder comprises two or more alloy powders with different components, each alloy powder has the liquidus temperature that is lower than reflux temperature, at least a kind of in the alloy powder has 10 ℃ or bigger difference between liquidus curve and solidus, the average composition of whole alloy powder is the tin of 58%-65% (weight) and the lead of 35-42% (weight), the perhaps tin of 60-65% (weight), the silver of the lead of 34-38% (weight) and 1-3% (weight).
Claims (15)
1. one kind is used for ball grid array and forms the solder(ing) paste of protuberance, constitute by solder flux and mixture with two or more alloy powders of different components, said each alloy powder all has the liquidus temperature that is lower than reflux temperature, at least one of said alloy powder has 10 ℃ or bigger difference between liquidus curve and solidus, the average composition of whole alloy powder is that the percentage by weight of tin is that 58-65% and plumbous percentage by weight are 35-42%.
2. according to the solder(ing) paste of the formation protuberance that is used for ball grid array of claim 1, it is characterized in that said alloy powder mixture comprises that a kind of percentage by weight of tin is that 45-60% and plumbous percentage by weight are the alloy powder of 40-55%, and a kind of percentage by weight of tin is that 70-100% and plumbous percentage by weight are the alloy powder of 0-30%.
3. according to the solder(ing) paste of the formation protuberance that is used for ball grid array of claim 1, it is characterized in that said alloy powder mixture comprises that a kind of percentage by weight of tin is that 50-60% and plumbous percentage by weight are the alloy powder of 40-50%, and a kind of percentage by weight of tin is that 70-85% and plumbous percentage by weight are the alloy powder of 15-30%.
4. according to the solder(ing) paste of the formation protuberance that is used for ball grid array of claim 1, it is characterized in that said alloy powder mixture comprises that a kind of percentage by weight of tin is that 45-60% and plumbous percentage by weight are the alloy powder of 40-55%, a kind of percentage by weight of tin is that 70-100% and plumbous percentage by weight are the alloy powder of 0-30%, and a kind of weight fraction of tin ratio is the alloy powder of 35-42% for 58-65% with plumbous percentage by weight.
5. according to the solder(ing) paste of the formation protuberance that is used for ball grid array of claim 1, it is characterized in that said alloy powder mixture comprises that a kind of percentage by weight of tin is that 50-60% and plumbous percentage by weight are the alloy powder of 40-50%, a kind of percentage by weight of tin is that 70-85% and plumbous percentage by weight are the alloy powder of 15-30%, and a kind of percentage by weight of tin is that 58-65% and plumbous percentage by weight are the alloy powder of 35-42%.
6. the solder cream that swells according to the formation that is used for ball grid array of one of claim 1 to 5 is characterized in that said reflux temperature is 210 ℃ to 240 ℃.
7. the solder(ing) paste that swells according to the formation that is used for ball grid array of claim 6 is characterized in that said reflux temperature approximately is 230 ℃.
8. the solder(ing) paste of a formation protuberance that is used for ball grid array, mixture by solder flux and alloy powder constitutes, this alloy powder comprises two or more alloy powders that composition is different, more than said each alloy powder have the liquidus temperature that is lower than reflux temperature, at least said a kind of alloy powder has 10 ℃ or bigger difference between liquidus curve and solidus, all the average composition of alloy powder is that the percentage by weight of tin is 60-65%, and plumbous percentage by weight is that the percentage by weight of 34-38% and silver is 1-3%.
9. the solder(ing) paste of the formation protuberance that is used for ball grid array according to Claim 8, the mixture that it is characterized in that said alloy powder comprises that a kind of percentage by weight of tin is 45-60%, plumbous percentage by weight is that the percentage by weight of 40-55% and silver is the alloy powder of 0-3%, and a kind of percentage by weight of tin is 70-100%, and plumbous percentage by weight is that the percentage by weight of 0-30% and silver is the alloy powder of 0-3%.
10. the solder(ing) paste of the formation protuberance that is used for ball grid array according to Claim 8, the mixture that it is characterized in that said alloy powder comprises that a kind of percentage by weight of tin is 50-60%, plumbous percentage by weight is that the percentage by weight of 40-50% and silver is the alloy powder of 0-3%, and a kind of percentage by weight of tin is 70-85%, and plumbous percentage by weight is that the percentage by weight of 15-30% and silver is the alloy powder of 0-3%.
11. the solder(ing) paste of the formation protuberance that is used for ball grid array according to Claim 8, the mixing that it is characterized in that said alloy powder comprises that a kind of percentage by weight of tin is 45-60%, plumbous percentage by weight is that the percentage by weight of 40-55% and silver is that the alloy powder of 0-3% and a kind of percentage by weight of tin are 70-100%, plumbous percentage by weight is that the percentage by weight of 0-30% and silver is the alloy powder of 0-3%, and a kind of percentage by weight of tin is 60-65%, and plumbous percentage by weight is that the percentage by weight of 34-38% and silver is the alloy powder of 1-3%.
12. the solder(ing) paste of the formation protuberance that is used for ball grid array according to Claim 8, it is characterized in that, said alloy powder mixture comprises that a kind of percentage by weight of tin is 50-60%, plumbous percentage by weight is that the percentage by weight of 40-50% and silver is the alloy powder of 0-3%, the percentage by weight of tin is 70-85%, plumbous percentage by weight is that the percentage by weight of 15-30% and silver is the alloy powder of 0-3%, and a kind of percentage by weight of tin is 60-65%, and plumbous percentage by weight is that the percentage by weight of 34-38% and silver is the alloy powder of 1-3%.
13. the solder(ing) paste of one of the formation protuberance that is used for ball grid array is characterized in that said reflux temperature is 210 ℃ to 240 ℃ according to Claim 8-12.
14. the solder(ing) paste according to the formation that is used for ball grid array of claim 13 is swelled is characterized in that said reflux temperature approximately is 230 ℃.
15. a ball grid array has wherein utilized any solder(ing) paste of describing in the claim 1 to 14 to form protuberance thereon.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18158294 | 1994-08-02 | ||
| JP181582/1994 | 1994-08-02 | ||
| JP181582/94 | 1994-08-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1126647A true CN1126647A (en) | 1996-07-17 |
| CN1052179C CN1052179C (en) | 2000-05-10 |
Family
ID=16103332
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN95116335A Expired - Fee Related CN1052179C (en) | 1994-08-02 | 1995-08-02 | Solder paste for ball grid array |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR0179709B1 (en) |
| CN (1) | CN1052179C (en) |
| SG (1) | SG38859A1 (en) |
| TW (1) | TW311894B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101087673B (en) * | 2005-01-11 | 2010-05-12 | 株式会社村田制作所 | Solder paste and electronic device |
| CN102642096A (en) * | 2011-02-18 | 2012-08-22 | 苏州宇邦新型材料有限公司 | Solder, tin-plated solder strip adopting solder and preparation methods of solder and tin-plated solder strip |
| CN106024363A (en) * | 2016-08-04 | 2016-10-12 | 重庆金籁科技股份有限公司 | Manufacturing method of SMD chip inductor, and SMD chip inductor |
| CN107197594A (en) * | 2016-03-15 | 2017-09-22 | 阿尔斯通运输科技公司 | The electron plate of insertion circuit including the half bore with plating metal |
| CN113182726A (en) * | 2021-04-07 | 2021-07-30 | 河南鸿昌电子有限公司 | Soldering tin for welding semiconductor and use method of soldering tin |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4739917A (en) * | 1987-01-12 | 1988-04-26 | Ford Motor Company | Dual solder process for connecting electrically conducting terminals of electrical components to printed circuit conductors |
| JPH01274491A (en) * | 1988-04-26 | 1989-11-02 | Aiwa Co Ltd | Substrate device using non-eutectic solder |
| JP2512108B2 (en) * | 1988-10-26 | 1996-07-03 | 松下電器産業株式会社 | Cream Handa |
-
1995
- 1995-07-31 KR KR1019950023486A patent/KR0179709B1/en not_active IP Right Cessation
- 1995-08-01 SG SG1995001023A patent/SG38859A1/en unknown
- 1995-08-01 TW TW084108009A patent/TW311894B/zh active
- 1995-08-02 CN CN95116335A patent/CN1052179C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101087673B (en) * | 2005-01-11 | 2010-05-12 | 株式会社村田制作所 | Solder paste and electronic device |
| CN102642096A (en) * | 2011-02-18 | 2012-08-22 | 苏州宇邦新型材料有限公司 | Solder, tin-plated solder strip adopting solder and preparation methods of solder and tin-plated solder strip |
| CN107197594A (en) * | 2016-03-15 | 2017-09-22 | 阿尔斯通运输科技公司 | The electron plate of insertion circuit including the half bore with plating metal |
| CN106024363A (en) * | 2016-08-04 | 2016-10-12 | 重庆金籁科技股份有限公司 | Manufacturing method of SMD chip inductor, and SMD chip inductor |
| CN113182726A (en) * | 2021-04-07 | 2021-07-30 | 河南鸿昌电子有限公司 | Soldering tin for welding semiconductor and use method of soldering tin |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1052179C (en) | 2000-05-10 |
| KR0179709B1 (en) | 1999-04-15 |
| KR960009083A (en) | 1996-03-22 |
| TW311894B (en) | 1997-08-01 |
| SG38859A1 (en) | 1997-04-17 |
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