CN112635634A - P-type ohmic reflecting electrode structure of ultraviolet LED and preparation method thereof - Google Patents
P-type ohmic reflecting electrode structure of ultraviolet LED and preparation method thereof Download PDFInfo
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- CN112635634A CN112635634A CN202011418477.3A CN202011418477A CN112635634A CN 112635634 A CN112635634 A CN 112635634A CN 202011418477 A CN202011418477 A CN 202011418477A CN 112635634 A CN112635634 A CN 112635634A
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- ultraviolet led
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 9
- 239000001301 oxygen Substances 0.000 claims abstract description 9
- 229910005855 NiOx Inorganic materials 0.000 claims abstract description 6
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000001590 oxidative effect Effects 0.000 abstract description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 3
- 238000001579 optical reflectometry Methods 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000000605 extraction Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000001954 sterilising effect Effects 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a P-type ohmic reflecting electrode structure of an ultraviolet LED and a preparation method thereof, wherein the P-type ohmic reflecting electrode structure adopts NiOxand/Al. The preparation method comprises the following steps: firstly, depositing a Ni layer with the thickness of 0.1nm-10 nm; oxidizing nickel into NiO under oxygen-containing atmospherexReducing the contact resistance with the P-AlGaInN; and preparing an Al layer with the thickness of 10 nm-300 nm. NiO provided by the inventionxthe/Al P type ohmic reflection electrode is applied to the ultraviolet LED, can give consideration to both high light reflectivity and low ohmic contact, and is beneficial to obtaining the ultraviolet LED with high light efficiency.
Description
Technical Field
The invention relates to the field of light emitting diodes, in particular to a P-type ohmic reflecting electrode structure of an ultraviolet LED and a preparation method thereof.
Background
The ultraviolet LED has great application value in the fields of sterilization, medical treatment, printing, biochemical detection, high-density information storage, secret communication and the like.
At present, the deep ultraviolet LED device is made of a GaN-based semiconductor. FIG. 1 is a schematic diagram of a typical GaN-based thin film LED structure, in which: 100 is a silicon substrate, 101 is a bonding metal, 102 is a P-type ohmic reflective electrode, 103 is a P-type AlGaInN semiconductor layer, 104 is an active layer, 105 is an N-type AlGaInN semiconductor layer, and 106 is an N-plane electrode. In the structure, when light emitted by the active layer is emitted to the bottom, the P-type ohmic reflecting electrode can reflect the light to the top, and the surface of the N-type AlGaInN semiconductor layer on the top is roughened, so that the total reflection of the N-type AlGaInN semiconductor layer and an air interface is damaged, and the light extraction efficiency is greatly improved. Therefore, the P-type ohmic reflecting electrode plays a key role in improving the light extraction efficiency of the GaN-based LED.
Al is the metal with the highest ultraviolet band reflectivity. However, as described above, the ohmic reflective electrode needs to be formed on the P-plane. The difference between the work functions of the Al and the P type AlGaInN semiconductor layer is large, and good ohmic contact is difficult to form. Therefore, the ohmic contact problem between Al and the P-type AlGaInN semiconductor layer is solved, and the light extraction efficiency of the ultraviolet LED can be greatly improved.
Disclosure of Invention
The invention aims to provide a P-type ohmic reflecting electrode structure of an ultraviolet LED, which simultaneously has high light reflection and low ohmic contact.
The second purpose of the invention is to provide a preparation method of the P-type ohmic reflecting electrode structure of the ultraviolet LED.
The first object of the present invention is achieved by:
a P-type ohmic reflecting electrode structure of an ultraviolet LED is characterized in that: the P-type ohmic reflective electrode structure is NiOx/Al，0＜x≤2。
The thickness of the Al layer is 10 nm-300 nm.
The second object of the invention is achieved by:
a preparation method of a P-type ohmic reflecting electrode structure of an ultraviolet LED comprises the following steps:
(1) providing a temporary substrate, and sequentially epitaxially growing an N-type AlInGaN semiconductor layer, an active region and a P-type AlInGaN semiconductor layer on the temporary substrate;
(2) preparing a P-type ohmic reflecting electrode on the P-type AlInGaN semiconductor layer; is characterized in that:
in the step (2), a Ni layer is firstly deposited and oxidized into NiO in an oxygen-containing atmospherexAnd depositing an Al layer.
The thickness of the deposited Ni layer is 0.5 nm-10 nm.
The oxygen-containing atmosphere is O-containing2Mixed gas of (1), containing O3Or oxygen-containing plasma.
Because the work functions of Ni and Al are both the same as that of P-type AlxGayIn1-x-yDirect Ni and Al with large N difference and P type AlxGayIn1-x-yN is difficult to form ohmic contacts. In the technical scheme of the invention, after Ni is deposited, the NiO is firstly oxidized in an oxygen-containing atmosphere to form NiOx，NiOxIs a P-type semiconductor, in the case of P-type AlxGayIn1-x-yThe transition effect can be achieved between N and Al, and the Al and P type Al are reducedxGayIn1-x-yContact resistance of N.
In addition, the thickness of Ni and the oxidation conditions are also critical in the present invention. Ni too thin, NiO formed by oxidationxToo thin, does not function to reduce contact resistance; ni is too thick and is not oxidized completely, resulting in Ni and P-type AlxGayIn1-x-yN-contacted is still pureNi affects ohmic contact resistance, and in addition, too thick Ni, which is impervious to oxidation, also affects reflectivity.
Therefore, the NiO of the ultraviolet LED provided by the inventionxthe/Al P-type ohmic reflecting electrode structure can simultaneously give consideration to high light reflection and low ohmic contact, and is beneficial to obtaining the ultraviolet LED with high luminous efficiency.
Drawings
Fig. 1 is a schematic view of a typical structure of a thin film type GaN-based LED, in which: 100-support substrate, 101-bonding metal, 102-P type ohmic reflective electrode, 103-P type AlGaInN semiconductor layer, 104-active layer, 105-N type AlGaInN semiconductor layer, 106-N plane electrode;
fig. 2 is a schematic view of an epitaxial structure of an ultraviolet LED, in which: 200-temporary substrate, 201-N type AlGaInN semiconductor layer, 202-active layer, 203-P type AlGaInN semiconductor layer;
FIG. 3 is a schematic diagram of a structure after depositing a Ni layer on an ultraviolet LED, wherein: 204-Ni layer;
fig. 4 is a schematic diagram of the structure of the uv LED after the Ni layer is oxidized, in which: 205-NiOxA layer;
FIG. 5 is NiO for ultraviolet LEDxSchematic structural diagram after Al deposition, wherein: 206-Al layer.
Detailed Description
The present invention will be described in further detail with reference to the following examples and drawings.
Example 1:
(1) firstly, using conventional MOCVD growth method to prepare ultraviolet LED epitaxial material, providing a temporary substrate 200, the material of which is Si, SiC or Al2O3An N-type AlGaInN semiconductor layer 201, an active layer 202 (AlGaInN), and a P-type AlGaInN semiconductor layer 203 are epitaxially grown in this order on a temporary substrate 200, as shown in fig. 2;
(2) on the P-type AlGaInN semiconductor layer 201, evaporating a Ni layer 204 with an electron beam to a thickness of 0.5-10 nm, as shown in FIG. 3;
(3) in the presence of O2Is carried out at the temperature of 300-xLayer 205, as shown in FIG. 4;
（4) NiO formed in oxidationxOn layer 205, Al layer 206 was electron beam evaporated to a thickness of 100nm, as shown in fig. 5;
so far, the preparation of the ohmic reflecting electrode of the ultraviolet LED is finished.
Example 2:
the oxidation conditions in example 1 were changed to:
in the presence of O3Is carried out at the temperature of 300-xA layer 205; ,
the others are unchanged.
Example 3:
the oxidation conditions in example 1 were changed to:
oxidizing the Ni layer 204 into NiO in oxygen-containing plasma with the power of 10-500W and the time of 10-600sxA layer 205;
the others are unchanged.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (5)
1. The utility model provides a P type ohm reflection electrode structure of ultraviolet LED which characterized in that: the P-type ohmic reflecting electrode is NiOx/Al, and x is more than 0 and less than or equal to 2.
2. The P-type ohmic reflective electrode structure for ultraviolet LED of claim 1, wherein: the thickness of the Al layer is 10 nm-300 nm.
3. A preparation method of a P-type ohmic reflecting electrode structure of an ultraviolet LED comprises the following steps:
(1) providing a temporary substrate, and sequentially epitaxially growing an N-type AlInGaN semiconductor layer, an active region and a P-type AlInGaN semiconductor layer on the temporary substrate;
(2) preparing a P-type ohmic reflecting electrode on the P-type AlInGaN semiconductor layer;
the method is characterized in that: in the step (2), a Ni layer is firstly deposited and oxidized into NiO in an oxygen-containing atmospherexAnd depositing an Al layer.
4. The method for preparing a P-type ohmic reflective electrode structure for an ultraviolet LED according to claim 3, wherein: the thickness of the deposited Ni layer is 0.5 nm-10 nm.
5. The method for preparing a P-type ohmic reflective electrode structure for an ultraviolet LED according to claim 3, wherein: the oxygen-containing atmosphere is one of a mixed gas containing O2, a mixed gas containing O3 or oxygen-containing plasma.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011418477.3A CN112635634A (en) | 2020-12-07 | 2020-12-07 | P-type ohmic reflecting electrode structure of ultraviolet LED and preparation method thereof |
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| CN202011418477.3A CN112635634A (en) | 2020-12-07 | 2020-12-07 | P-type ohmic reflecting electrode structure of ultraviolet LED and preparation method thereof |
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| CN112635634A true CN112635634A (en) | 2021-04-09 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101123290A (en) * | 2007-09-12 | 2008-02-13 | 普光科技（广州）有限公司 | A GaN base LED P-node transparent conductive film and its making method |
| CN101351898A (en) * | 2005-12-27 | 2009-01-21 | 三星电子株式会社 | Group-III nitride-based light emitting device |
| CN111864027A (en) * | 2019-10-11 | 2020-10-30 | 中国科学院宁波材料技术与工程研究所 | Ultraviolet LED high-counter electrode, ultraviolet LED and preparation method thereof |
-
2020
- 2020-12-07 CN CN202011418477.3A patent/CN112635634A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101351898A (en) * | 2005-12-27 | 2009-01-21 | 三星电子株式会社 | Group-III nitride-based light emitting device |
| CN101123290A (en) * | 2007-09-12 | 2008-02-13 | 普光科技（广州）有限公司 | A GaN base LED P-node transparent conductive film and its making method |
| CN111864027A (en) * | 2019-10-11 | 2020-10-30 | 中国科学院宁波材料技术与工程研究所 | Ultraviolet LED high-counter electrode, ultraviolet LED and preparation method thereof |
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