CN112635385A - Tool and method for thinning flip chip bonding device in single event effect test - Google Patents
Tool and method for thinning flip chip bonding device in single event effect test Download PDFInfo
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- CN112635385A CN112635385A CN202011529470.9A CN202011529470A CN112635385A CN 112635385 A CN112635385 A CN 112635385A CN 202011529470 A CN202011529470 A CN 202011529470A CN 112635385 A CN112635385 A CN 112635385A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Abstract
The invention discloses a tool and a method for thinning a flip chip bonding device for a single event effect test, belonging to the technical field of thinning of integrated circuit chips. Compared with the traditional method, the special tool and the special method can be used for realizing the thinning of the flip chip bonding device in the single event effect test by using the full-automatic wafer thinning machine, and the technical bottleneck problem that no special equipment exists in the industry is solved; by optimizing the thinning process method and process parameters, the thinning precision and the thinning success rate of the flip chip bonding device in the single event effect test are improved, and the problems of insufficient thinning precision and low success rate caused by limited experience of operators in blind reduction are avoided; the special tool and the method can efficiently and stably finish the thinning of the flip chip bonding device of the single event effect test, and the method is simple, practical, easy to realize and strong in operability.
Description
Technical Field
The invention relates to a tool and a method for thinning a flip chip bonding device for a single event effect test, belonging to the technical field of thinning of integrated circuit chips.
Background
The cosmic space environment has a severe radiation environment, and the phenomenon of single event upset, single event locking and single event breakdown of an integrated circuit can occur to the integrated circuit due to the single event effect generated by high-energy heavy ions and protons in an integrated circuit inside a spacecraft, so that the problems of circuit logic state change and function interference are caused, the whole electronic system cannot work in a normal state, and catastrophic accidents can be caused seriously. According to statistics, the number of aerospace electronic device faults caused by the single event effect accounts for 55% of the total number of faults.
In recent years, with the rapid development of aerospace technology, the requirements for the performance and data processing capability of aerospace electronic systems are increasing, and with the development of satellites toward miniaturization, miniaturization and high integration, nanoscale integrated circuits are the inevitable choice for aerospace electronic systems. The coming of integrated circuit nanometer process nodes aggravates the influence of single event effect on the integrated circuit, so that the single event effect becomes the most main radiation reliability problem of the aerospace-grade integrated circuit.
In order to evaluate the on-orbit risk of an aerospace-grade integrated circuit in advance, various heavy ions accelerated by a heavy ion accelerator are generally used for simulating space particles to perform an irradiation test on the circuit before the integrated circuit is packaged at a board level. However, for flip-chip packaged integrated circuits, the chip is back-side up, and during single particle testing, the accelerated particles can only enter the active region from the back side of the chip through the substrate. During ground single particle test, the accelerator can provide heavy ion energy and has limited range, heavy ions cannot penetrate through an aerospace-grade flip chip integrated circuit chip with conventional thickness, the chip on a packaged device must be thinned, and the blocking of heavy ions by a base material outside a circuit layer of the chip is reduced to the maximum extent.
The aerospace grade flip chip packaging device chip can be divided into two layers, wherein one layer is an active layer with electrical performance, and the other layer is a substrate layer which plays a role in protecting and supporting a circuit layer. The total thickness of the aerospace grade flip chip bonding packaging device chip is 775 mu m generally, the thickness of an active layer is only within 15 mu m, and the rest thicknesses are the thicknesses of a substrate layer. For a ground single event effect test, under the condition of ensuring the functional integrity of a flip chip welded device, the thickness of the flip chip welded device is closer to the thickness of an active layer of the device chip in the single event effect test, the better the single event effect test effect is, and the failure risk of the device after the device is in orbit can be reduced. The industry generally requires that the thickness of a sample chip of the flip chip bonding device for the single event effect test is not more than 35 +/-10 mu m.
At present, no special equipment suitable for thinning the single event effect test flip device exists in the industry, so that the technical difficulty for realizing the high-precision thinning of the single event effect test flip device is very high, and the technical difficulty is extremely dependent on the operation experience of technicians.
Disclosure of Invention
The invention solves the problems that: in order to overcome the defects of the prior art, the tool and the method for thinning the flip chip welding device in the single event effect test are provided, the high-precision thinning of the flip chip welding device chip is realized by using conventional wafer thinning equipment, and the target thickness precision, TTV and qualification rate of the thinned flip chip welding device chip are ensured.
The technical scheme adopted by the invention comprises the following steps:
the utility model provides a frock that is used for experimental flip-chip bonding device attenuate of single event effect, includes: PVC plastic board and thinning film;
the PVC plastic plate is circular, a round hole is processed in the center of the PVC plastic plate, and a flip chip device to be thinned is fixed at a specific position inside the round hole through a thinning film;
the thickness of the PVC plastic plate is not more than 1/2 of the thickness of the flip-chip bonding substrate, and the grinding wheel of the circuit thinning process equipment is prevented from contacting the PVC plastic plate.
A method for thinning a flip chip device for a single event effect test comprises the following steps:
1) preparation tool
The thickness of the PVC plastic plate is not more than 1/2 of the thickness of the flip-chip substrate, the flatness of the PVC plastic plate is not more than 5 microns, the diameter of the circular hole is between 100mm and 150mm, and the deviation of the position degree of the circle center of the circular hole and the circle center of the PVC plastic plate is not more than 1 mm;
the PVC plastic plate is adhered to the thinning film, the base material of the thinning film is polyolefin, and the thickness of the base material is not less than 90 mu m; the adhesive layer material is acrylic acid, and the thickness of the adhesive layer material is not more than 20 micrometers; the thinning film has the characteristic of UV dispergation, the viscosity before UV is not less than 6000mN/25mm, the viscosity after UV is not more than 100mN/25mm, the flattening and no wrinkle of the thinning film are ensured during pasting, and no macroscopic excess is left on the thinning film exposed in the circular hole area;
2) fixing device
Firstly, cleaning one side of a substrate of a flip chip device, and after cleaning, adhering a thinning film exposed out of a circular hole area of a tool to one side of the substrate of the flip chip device in a rolling mode; the pasting position enables the flip chip device not to cover the circle center of the round hole, the minimum vertical moment between the edge of the flip chip device and the circle center of the round hole is not smaller than 1mm, and the contact surface of the reduction film and the flip chip device is not required to have any bubbles visible to naked eyes;
3) optimized process method
Setting a removal amount at a first stage, and determining according to the theoretical removal amount minus a corresponding maximum accumulated error; setting the removal amount at the second stage, namely setting according to a plurality of 5-micrometer step lengths, and finishing measurement each time until the thickness of a device chip meets the requirement; wherein the theoretical removal amount is equal to the difference between the original thickness and the target thickness of the device chip; the maximum accumulated error is equal to the maximum value of the absolute value difference between the theoretical removal amount and the actual removal amount; (ii) a
4) Optimizing thinning parameters
The optimized thinning process parameters comprise: main shaft inclination, main shaft rotating speed, workbench rotating speed and main shaft feeding speed; the inclination of the main shaft is optimized in a mode that the relative height of the grinding wheel and two edge contact points of the flip chip is 0; the value range of the rotating speed of the main shaft is 4000-; the rotating speed of the workbench ranges from 50 r/min to 200 r/min; the value range of the main shaft feeding speed is 0.1-0.5 mu m/s;
5) performing thinning treatment
Starting a manual loading mode of the equipment, fixing the flip chip device on a PVC plastic plate through a thinning film, enabling the thinning film to be adsorbed on a worktable of a thinning machine downwards, and starting thinning treatment; and after the thinning is finished, taking out the thinned device, performing UV irradiation degumming, and separating the thinned device from the tool.
Compared with the prior art, the invention has the beneficial effects that:
1) by utilizing the special tool and the method, the full-automatic wafer thinning machine can be utilized to realize the thinning of the single event effect test flip chip bonding device, and the technical bottleneck problem that no special equipment exists in the industry is broken through;
2) by optimizing the thinning process method and process parameters, the thinning precision and the thinning success rate of the flip chip bonding device in the single event effect test are improved, and the problems of insufficient thinning precision and low success rate caused by limited experience of operators in blind reduction are avoided;
3) the special tool and the method can efficiently and stably finish the thinning of the flip chip bonding device of the single event effect test, and the method is simple, practical, easy to realize and strong in operability.
Drawings
FIG. 1 is a schematic view of a flip chip device and a fixture of the present invention;
FIG. 2 is a flow chart of a flip chip device thinning process of the present invention;
FIG. 3 is a schematic diagram of a flip chip device thinning in accordance with the present invention.
Detailed Description
The invention utilizes a special tool, as shown in figure 1, converts the flip chip device 3 into a wafer, and realizes the high-precision thinning of the flip chip device 3 chip which meets the ground single event effect test requirement by using a conventional wafer thinning machine and optimizing the thinning process method and process parameters. There is great difference in flip-chip bonding device 3 and disk appearance, size, leads to flip-chip bonding device 3 can't direct absorption fixed and disk attenuate quick-witted workstation, must realize the conversion of flip-chip bonding device 3 to the disk with the help of auxiliary fixtures. The wafer thinning machine is special wafer thinning equipment, when the wafer is thinned, the thinning equipment monitors the thickness of the wafer in real time by using a mechanical height measuring system, when the thickness of the wafer reaches a set thickness, a thinning main shaft stops descending, and thinning is completed in one step. The difference between the overall dimension of the flip-chip welded device 3 and the wafer is large, the mechanical height measuring system cannot monitor the thickness of the flip-chip welded device, and when the wafer thinning equipment is used for thinning the flip-chip welded device 3, due to the existence of accumulated errors of spindle feeding, the thinning success rate is extremely low by adopting the one-time thinning process method, and the thinning process method needs to be optimized. The invention controls the thinning success rate of the flip chip device 3 by a 'stage type' thinning method. The 'stage type' thinning first-stage removal amount is set and determined by subtracting a corresponding maximum accumulated error (the maximum value of an absolute value difference between the theoretical removal amount and the actual removal amount) from the theoretical removal amount (the difference between the original thickness and the target thickness of the device chip), so that the device is not damaged due to the fact that the first-stage thinning is ensured to the maximum degree. The special tool is obtained by processing a PVC plastic plate 1, the PVC plastic plate 1 is circular, a circular hole 2 is processed in the center of the PVC plastic plate 1, and a flip-chip device 3 to be thinned is fixed at a specific position inside the circular hole 2 through a thinning film 4.
The present invention will be described in further detail with reference to the accompanying drawings and examples.
The utility model provides a frock that is used for experimental flip-chip bonding device attenuate of single event effect, includes: a PVC plastic plate 1 and a thinning film 4.
The PVC plastic plate 1 is circular, a round hole 2 is processed in the center of the PVC plastic plate 1, and a flip chip device 3 to be thinned is fixed at a specific position inside the round hole 2 through a thinning film 4;
the thickness of the PVC plastic plate 1 is not more than 1/2 of the thickness of the flip-chip bonding substrate, and the grinding wheel of the circuit thinning process equipment is prevented from contacting with the PVC plastic plate 1 to influence the state of the thinning grinding wheel.
The TTV and the flatness of the PVC plastic plate 1 are not more than 5 mu m, so that the flatness and the uniform thickness of the tool are ensured, and the adsorption is stable in the thinning process.
The diameter of the PVC plastic plate 1 is 203mm (8inch), and enough space is reserved for processing the central round hole 2.
The processing method of the round hole 2 is low-stress laser cutting, the thickness of the edge damage layer of the round hole 2 is reduced, the residual stress caused by processing is reduced, and the flatness of the tool is guaranteed.
The diameter of the circular hole 2 ranges from 100mm to 150mm, so that on one hand, the strength of the circular ring tool is guaranteed, and on the other hand, the flip-chip bonding device 3 can be adhered to a specific position in the hole.
The deviation between the circle center of the round hole 2 and the circle center of the PVC plastic plate 1 is not more than 1mm, and the accuracy of the flip chip device 3 in the process of being adhered to a specific position in the hole is guaranteed.
The base material of the thin film 4 is polyolefin, the thickness of the base material is not less than 90 μm, and the supporting capability of the thin film 4 to the chip is ensured; the glue layer material of the thinning film 4 is acrylic acid, the thickness of the glue layer material is not more than 20 microns, and the stability of the chip in the thinning process is guaranteed.
The thinning film 4 has the characteristic of UV dispergation, the viscosity before UV is not less than 6000mN/25mm, and the viscosity after UV is not more than 100mN/25 mm.
The specific position requires that flip-chip bonding device 3 does not cover the circle center of circular hole 2, and the minimum vertical moment of flip-chip bonding device 3 edge and the circle center of circular hole 2 is not less than 1mm, guarantees that flip-chip bonding device 3 can stably place on the little toper workstation of disk attenuate equipment.
The thinning process method of the invention is a process method which replaces the conventional one-time thinning process method by a step-type thinning method.
As shown in fig. 2 and 3, the method for thinning the flip chip device for the single event effect test of the invention comprises the following steps:
1) preparation tool
The thickness of the PVC plastic plate 1 is not more than 1/2 of the thickness of the flip-chip substrate, the TTV and the flatness of the PVC plastic plate 1 are not more than 5 μm, the diameter of the circular hole 2 is between 100mm and 150mm, the diameter of the PVC plastic plate 1 in the embodiment of the invention is 203mm (8inch), the deviation of the position degree of the circle center of the circular hole 2 and the circle center of the PVC plastic plate 1 is not more than 1mm, and the circular hole 2 is processed by perforating in a low-stress laser cutting mode;
the PVC plastic plate 1 is adhered to the thinning film 4, the base material of the thinning film 4 is polyolefin, the thickness is not less than 90 mu m, and the supporting capability of the thinning film 4 to the chip is ensured; the glue layer is made of acrylic acid, the thickness is not more than 20 mu m, and the stability of the chip in the thinning process is ensured. The thinning film 4 has the characteristic of UV dispergation, the viscosity before UV is not less than 6000mN/25mm, the viscosity after UV is not more than 100mN/25mm, the flattening and no wrinkle of the thinning film 4 are ensured during pasting, and no macroscopic excess is left on the thinning film 4 exposed in the circular hole 2 area;
2) fixing device
Firstly, cleaning one side of a substrate of a flip chip device 3, and after cleaning, adhering a thinning film 4 exposed out of the circular hole 2 area of the tool to one side of the substrate of the flip chip device 3 in a rolling manner; the pasting position ensures that the flip chip device 3 does not cover the circle center of the circular hole 2, the minimum vertical moment between the edge of the flip chip device 3 and the circle center of the circular hole 2 is not less than 1mm, and no bubbles visible to naked eyes are formed on the contact surface of the thinning film 4 and the flip chip device 3;
3) optimized process method
The thinning method is optimized to be 'stage type' thinning, the removal amount in the first stage is set, and the method is determined according to the theoretical removal amount minus the corresponding maximum accumulative error; setting the removal amount at the second stage, namely setting according to a plurality of 5 mu m step lengths, and finishing measurement each time until the thickness of the device chip meets the requirement of 35 +/-10 mu m; wherein the theoretical removal amount is equal to the difference between the original thickness and the target thickness of the device chip; the maximum accumulated error is equal to the maximum value of the absolute value difference between the theoretical removal amount and the actual removal amount; the device is not damaged due to the fact that the first-stage thinning is guaranteed to the greatest extent;
4) optimizing thinning parameters
The optimized thinning process parameters comprise: main shaft inclination, main shaft rotating speed, workbench rotating speed and main shaft feeding speed; the inclination of the main shaft is optimized in a mode that the relative height of the grinding wheel and two edge contact points of a chip of the flip chip bonding device 3 is 0; the contact length, the contact area and the cut-in angle of the grinding wheel of the equipment and the chip of the flip chip bonding device 3 are ensured to be unchanged, so that the TTV is ensured to be thinned; the value range of the rotating speed of the main shaft is 4000-; and in the allowable range of the equipment capacity, the removal amount in unit time is reduced, the grinding force is reduced, and the chip is ensured not to fall off in the thinning process. The rotating speed of the workbench ranges from 50 r/min to 200 r/min; the grinding force is reduced, and the flip chip bonding device 3 is prevented from falling off in the thinning process; the value range of the main shaft feeding speed is 0.1-0.5 mu m/s; the removal amount in unit time is reduced, the grinding force is reduced, and the chip is prevented from falling in the thinning process.
5) Performing thinning treatment
Starting a manual feeding mode of the equipment, fixing the flip-chip bonding device 3 on the PVC plastic plate 1 through the thinning film 4, enabling the thinning film 4 to be adsorbed on a worktable of the thinning machine in a downward direction, and starting thinning treatment; and after the thinning is finished, manually taking out the thinned device, performing UV irradiation degumming, and separating the thinned device from the tool.
Examples
A tool and a method for thinning a single chip specifically comprise the following steps:
(1) tooling preparation
The thickness of the flip chip device 3 to be thinned is 2.8 mm.
The diameter of the PVC plastic circular plate is 203mm (8inch), the thickness is 1.3mm, and the TTV and the flatness are not more than 5 mu m. A circular hole 2 concentric with the circular plate is cut in the center of the PVC plastic circular plate by a low-stress laser cutting mode, and the diameter of the circular hole 2 is 120 mm.
The PVC plastic plate 1 is adhered to the thinning film 4, the base material of the thinning film 4 is polyolefin, the thickness is 90 mu m, and the supporting capability of the thinning film 4 to the chip is ensured; the glue layer is made of acrylic acid and has the thickness of 10 mu m. The thinning film 4 has the characteristic of UV dispergation, the viscosity before UV is 6500mN/25mm, the viscosity after UV is not more than 250mN/25mm, the flattening and wrinkle-free performance of the thinning film 4 are ensured during pasting, and no macroscopic excessive substances exist on the thinning film 4 exposed in the circular hole 2 area.
(2) Device attachment
Cleaning one side of a substrate of the flip chip device 3 in an environment with the temperature of 20-30 ℃ and the humidity of 35-45%, and sticking the thinning film 4 exposed out of the special tool circular hole 2 area to one side of the substrate of the flip chip device 3 in a rolling way; in terms of pasting positions, the flip chip device 3 does not cover the circle center of the circular hole 2, the distance between one side close to the circle center of the circular hole 2 and the circle center of the circular hole 2 is 2mm, and any bubbles visible to naked eyes cannot exist on the contact surface of the thinning film 4 and the flip chip device 3.
(3) Optimization of process
In this embodiment, the original thickness of the flip chip 3 chip is 775 μm, the target thickness is 35 μm, the theoretical removal amount is 740 μm, the removal amount of 740 μm is set, the maximum value of the actual removal amount is 765 μm, and the minimum value is 705 μm, when the device is selected and used for 30 times of thinning.
The thinning method is optimized to be 'step-type' thinning, the removal amount at the first stage is set and determined to be 705 mu m according to the theoretical removal amount of 740 mu m (the difference value between the original thickness of the device chip and the target thickness) minus the corresponding maximum accumulative error of 35 mu m (the maximum value of the absolute value difference between the theoretical removal amount and the actual removal amount); and (4) setting the removal amount at the second stage, wherein the removal amount is set according to a plurality of 5 micrometers, and the measurement is finished each time until the thickness of the device chip meets the requirement of 35 +/-10 micrometers.
(4) Thinning parameter optimization
The inclination of the main shaft is optimized in a mode that the relative height of the grinding wheel and two edge contact points of a chip of the flip chip bonding device 3 is 0; the rotating speed of the main shaft is optimized to be 4200 r/min; the rotating speed of the workbench is optimized to 100 r/min; the spindle feed speed was optimized to 0.2 μm/s.
(5) Thinning
Starting a manual feeding mode of the equipment, and adsorbing the thinning film 4 on the worktable of the thinning machine downwards to start thinning through the device and the tool which are fixed together by the thinning film 4. And after the thinning is finished, manually taking out the thinned device, performing UV irradiation degumming, and separating the thinned device from the tool.
Those skilled in the art will appreciate that the details of the invention not described in detail in the specification are within the skill of those skilled in the art.
Claims (9)
1. The utility model provides a frock that is used for experimental flip-chip bonding device attenuate of single event effect which characterized in that includes: a PVC plastic plate (1) and a thinning film (4);
the shape of the PVC plastic plate (1) is circular, a circular hole (2) is processed in the center of the PVC plastic plate (1), and a flip chip device (3) to be thinned is fixed at a specific position inside the circular hole (2) through a thinning film (4);
PVC plastic slab (1) thickness is not more than 1/2 of flip-chip bonding base plate thickness, prevents that the emery wheel of circuit attenuate process equipment from contacting PVC plastic slab (1).
2. The tooling for thinning the flip chip device for the single event effect test of claim 1, wherein: the flatness of the PVC plastic plate (1) is not more than 5 mu m.
3. The tooling for thinning the flip chip device for the single event effect test according to claim 2, characterized in that: the processing method of the round hole (2) is low-stress laser cutting.
4. The tooling for thinning the flip chip device for the single event effect test according to claim 2 or 3, wherein: the diameter of the round hole (2) ranges from 100mm to 150 mm.
5. The tooling for thinning the flip chip device for the single event effect test according to claim 4, wherein: the deviation between the circle center of the round hole (2) and the circle center of the PVC plastic plate (1) is not more than 1 mm.
6. The tooling for thinning the flip chip device for the single event effect test of claim 5, wherein: the base material of the thinning film (4) is polyolefin, and the thickness of the base material is not less than 90 mu m; the glue layer material of the thinning film (4) is acrylic acid, and the thickness of the glue layer material is not more than 20 mu m.
7. The tooling for thinning the flip chip device for the single event effect test of claim 6, wherein: the thinning film (4) has the characteristic of UV dispergation, the viscosity before UV is not less than 6000mN/25mm, and the viscosity after UV is not more than 100mN/25 mm.
8. The tooling for thinning the flip chip device for the single event effect test of claim 7, wherein: the specific position requires that the flip chip device (3) does not cover the circle center of the round hole (2), and the minimum vertical moment between the edge of the flip chip device (3) and the circle center of the round hole (2) is not less than 1 mm.
9. A method for thinning a flip chip device for a single event effect test is characterized by comprising the following steps:
1) preparation tool
The thickness of the PVC plastic plate (1) is not more than 1/2 of the thickness of the flip-chip substrate, the flatness of the PVC plastic plate (1) is not more than 5 mu m, the diameter of the circular hole (2) is between 100mm and 150mm, and the position deviation between the circle center of the circular hole (2) and the circle center of the PVC plastic plate (1) is not more than 1 mm;
the PVC plastic plate (1) is adhered to the thinning film (4), the base material of the thinning film (4) is polyolefin, and the thickness of the base material is not less than 90 mu m; the glue layer material of the thinning film (4) is acrylic acid, and the thickness of the glue layer material is not more than 20 mu m; the thinning film (4) has the characteristic of UV dispergation, the viscosity before UV is not less than 6000mN/25mm, the viscosity after UV is not more than 100mN/25mm, the flattening and no wrinkle of the thinning film (4) are ensured during pasting, and no macroscopic excess is left on the thinning film (4) exposed in the circular hole (2) area;
2) fixing device
Firstly, cleaning one side of a substrate of a flip chip device (3), and after cleaning, adhering a thinning film (4) exposed out of a circular hole (2) area of a tool to one side of the substrate of the flip chip device (3) in a rolling way; the pasting position enables the flip chip device (3) not to cover the circle center of the round hole (2), the minimum vertical distance between the edge of the flip chip device (3) and the circle center of the round hole (2) is not smaller than 1mm, and no bubbles visible to naked eyes are formed on the contact surface of the thin film (4) and the flip chip device (3);
3) optimized process method
Setting a removal amount at a first stage, and determining according to the theoretical removal amount minus a corresponding maximum accumulated error; setting the removal amount at the second stage, namely setting according to a plurality of 5-micrometer step lengths, and finishing measurement each time until the thickness of a device chip meets the requirement; wherein the theoretical removal amount is equal to the difference between the original thickness and the target thickness of the device chip; the maximum accumulated error is equal to the maximum value of the absolute value difference between the theoretical removal amount and the actual removal amount; (ii) a
4) Optimizing thinning parameters
The optimized thinning process parameters comprise: main shaft inclination, main shaft rotating speed, workbench rotating speed and main shaft feeding speed; the inclination of the main shaft is optimized in a mode that the relative height of the grinding wheel and two edge contact points of a chip of the flip chip bonding device (3) is 0; the value range of the rotating speed of the main shaft is 4000-; the rotating speed of the workbench ranges from 50 r/min to 200 r/min; the value range of the main shaft feeding speed is 0.1-0.5 mu m/s;
5) performing thinning treatment
Starting a manual feeding mode of the equipment, fixing the flip-chip bonding device (3) on the PVC plastic plate (1) through the thinning film (4), enabling the thinning film (4) to be adsorbed on a worktable of a thinning machine in a downward direction, and starting thinning treatment; and after the thinning is finished, taking out the thinned device, performing UV irradiation degumming, and separating the thinned device from the tool.
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| CN105150088A (en) * | 2015-08-28 | 2015-12-16 | 中国空间技术研究院 | Device and method for perforating and thinning back sides of electronic devices |
| CN110211876A (en) * | 2019-04-28 | 2019-09-06 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | A kind of processing method of chip |
| CN110587385A (en) * | 2019-09-30 | 2019-12-20 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Method for thinning flip chip on circuit board, grinding drill bit and fixed base |
| CN111081593A (en) * | 2019-09-24 | 2020-04-28 | 北京时代民芯科技有限公司 | Tool and method for thinning single chip |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105150088A (en) * | 2015-08-28 | 2015-12-16 | 中国空间技术研究院 | Device and method for perforating and thinning back sides of electronic devices |
| CN110211876A (en) * | 2019-04-28 | 2019-09-06 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | A kind of processing method of chip |
| CN111081593A (en) * | 2019-09-24 | 2020-04-28 | 北京时代民芯科技有限公司 | Tool and method for thinning single chip |
| CN110587385A (en) * | 2019-09-30 | 2019-12-20 | 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） | Method for thinning flip chip on circuit board, grinding drill bit and fixed base |
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