CN112600072A - Distributed feedback and reflection laser - Google Patents

Distributed feedback and reflection laser Download PDF

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Publication number
CN112600072A
CN112600072A CN202011073661.9A CN202011073661A CN112600072A CN 112600072 A CN112600072 A CN 112600072A CN 202011073661 A CN202011073661 A CN 202011073661A CN 112600072 A CN112600072 A CN 112600072A
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distributed feedback
dfb
laser
reflection
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松井康浩
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II VI Delaware Inc
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II VI Delaware Inc
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    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
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    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis
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    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers

Abstract

A distributed feedback plus reflection (DFB + R) laser includes an active region, a passive region, a Low Reflection (LR) mirror, and an etalon. The active region includes a Distributed Feedback (DFB) grating and is configured to operate in a lasing mode. The inactive region is coupled end-to-end with the active region. The LR mirror is formed on or in the inactive region. The etalon includes a portion of a DFB grating, a passive region, and an LR mirror. The lasing mode of the active region is aligned to the long wavelength edge of the reflection peak of the etalon.

Description

Distributed feedback and reflection laser
Cross Reference to Related Applications
This application claims benefit and priority from U.S. provisional application No. 62/908,990 filed on day 1, 10, 2019 and U.S. provisional application No. 62/938,151 filed on day 20, 11, 2019. Application 62/908,990 and application 62/938,151 are both incorporated herein by reference.
Technical Field
Embodiments discussed herein relate to Distributed Feedback (DFB) lasers with weak optical feedback.
Background
Unless otherwise indicated herein, the materials described herein are not prior art to the claims of this application and are not admitted to be prior art by inclusion in this section.
Lasers are useful in many applications. For example, lasers may be used in optical communications to transmit digital data across a fiber optic network. The laser may be modulated by a modulation signal, such as an electronic digital signal, to produce an optical signal that is transmitted over the fiber optic cable. Photosensitive devices such as photodiodes are used to convert optical signals into electrical digital signals that are transmitted over fiber optic networks. Such fiber optic networks enable modern computing devices to communicate at high speeds and over long distances.
In various industries, the bit rate of data transmission per channel has exceeded 100 gigabits per second (Gb/s), establishing transmitter performance in excess of 60 gigahertz (GHz) Bandwidth (BW) as an industry goal of the 100Gb/s non-return-to-zero (NRZ) format. Although some electroabsorption modulators have demonstrated the ability to approach 60GHz BW, the BW of Directly Modulated Lasers (DMLs), such as directly modulated DFB lasers, has lagged by about 30 GHz.
The subject matter claimed herein is not limited to implementations that solve any disadvantages or that operate only in environments such as those described above. Rather, this background is provided merely to illustrate one example technology area in which some implementations described herein may be practiced.
Disclosure of Invention
This summary is provided to introduce a selection of concepts in a simplified form that are further described below in the detailed description. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used as an aid in determining the scope of the claimed subject matter.
Some example embodiments described herein generally relate to distributed feedback lasers with weak optical feedback, also referred to as distributed feedback plus reflection (DFB + R) lasers.
In an example embodiment, a distributed feedback plus reflection laser includes: a distributed feedback region, a High Reflection (HR) mirror, an inactive region, and a Low Reflection (LR) mirror. The distributed feedback region is configured to operate in a lasing mode. A high reflector is coupled to the rear of the distributed feedback region. The passive region is coupled to the front of the distributed feedback region. The low reflector is formed in front of the passive region. The passive region, the portion of the distributed feedback region in front of the distributed feedback region, and the low mirror form an etalon having a reflection profile with periodic peaks and valleys. The lasing mode of the distributed feedback region is aligned to the long wavelength edge of one of the periodic peaks of the reflection profile of the etalon.
In another example embodiment, a distributed feedback-plus-reflection laser includes an active region, a passive region, a low mirror, and an etalon. The active region includes a distributed feedback grating and is configured to operate in a lasing mode. The inactive region is coupled end-to-end with the active region. The low mirror is formed on or in the passive region. The etalon includes a portion of a distributed feedback grating, an inactive region, and a low mirror. The lasing mode of the active region is aligned to the long wavelength edge of the reflection peak of the etalon.
Drawings
To further clarify the above and other advantages and features of the present invention, a more particular description of the invention will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings. It is appreciated that these drawings depict only typical embodiments of the invention and are therefore not to be considered limiting of its scope. The invention will be described and explained with additional specificity and detail through the use of the accompanying drawings in which:
FIG. 1 illustrates an exemplary modulation spectrum of an active region of a laser relative to a DBR reflection profile of a DBR section of the laser;
FIG. 2 shows a Directly Modulated Laser (DML) modulation spectrum using the photon-photon resonance effect;
FIG. 3 illustrates an example DFB + R laser configured to take advantage of the detuned loading effect;
FIG. 4 illustrates various reflection profiles associated with the laser of FIG. 9 and the DFB + R laser of FIG. 3;
FIG. 5 illustrates various reflection profiles of another exemplary DFB + R laser;
FIG. 6 shows various spectra and S21 responses of a DFB + R laser;
FIG. 7 illustrates another example DFB + R laser configured to take advantage of the detuned loading effect;
FIG. 8 illustrates another example DFB + R laser configured to take advantage of the detuned loading effect; and
fig. 9 shows a prior art DFB laser with an inactive region and a DFB region.
Detailed Description
Various aspects of example embodiments of the invention will now be described with reference to the drawings. It is to be understood that the drawings are diagrammatic and schematic representations of such example embodiments and are not limiting of the present invention, nor are they necessarily drawn to scale.
This application is related to U.S. patent No. 10,063,032, published on 8/28/2018, and incorporated herein by reference.
Embodiments described herein take advantage of the detuned loading effect to improve the performance of DFB lasers by including a passive region with weak optical feedback in the DFB laser. The detuned loading effect will first be described in the context of a Distributed Bragg Reflector (DBR) laser, followed by a discussion of the applicability of the detuned loading effect to DFB lasers.
Fig. 1 illustrates an example modulation spectrum 102 of an active region of a laser relative to a DBR reflection profile 104 of a DBR section of the laser, arranged in accordance with at least one embodiment described herein. As shown, the main lasing mode 106 of the modulation spectrum 102 is aligned to the long wavelength edge 108 of the peak of the DBR reflection profile 104. Thus, lasing of the active region occurs at frequencies (or wavelengths) at the long wavelength edge of the DBR stop band.
When the laser is modulated (e.g., by modulation of the active region), the lasing frequency changes towards shorter wavelengths due to frequency chirp as the modulation changes from a bias of 0 bits to a bias of 1 bits, and towards longer wavelengths as the modulation changes from a bias of 1 bit to a bias of 0 bits. In fig. 1, the frequency/wavelength of the main lasing mode 106 for each of the 1 and 0 bits is represented by the respective vertical dashed line labeled 1 or 0, respectively.
As the primary lasing mode 106 moves up and down the long wavelength edge of the reflection profile 104, the frequency chirp caused by the modulation results in a change in reflection. In particular, when the modulation changes from a bias of 0 bits to a bias of 1 bits, the wavelength of the main lasing mode 106 shifts to shorter wavelengths, resulting in increased reflection and thus lower cavity loss. When the modulation changes from a bias of 1 bit to a bias of 0 bit, the wavelength of the main lasing mode 106 shifts to longer wavelengths, resulting in reduced reflection and hence higher cavity loss. In fig. 1, the reflectivity of the DBR region of the laser at the wavelength corresponding to each of the 1 and 0 bits is represented by the respective horizontal dashed line labeled 1 or 0, respectively.
In more detail, the rapid current modulation of the active region of the laser causes carrier density variations in the laser. This causes not only optical gain fluctuations but also index fluctuations due to the so-called alpha parameter of the material. These gain and index fluctuations in turn cause intensity and frequency fluctuations, respectively, in the laser light. The relative amount of frequency modulation compared to the intensity modulation of the laser is described by the chirp factor, also known as the alpha parameter or line width enhancement factor of the structure. When the laser is detuned such that the lasing mode 106 is located at the long wavelength edge of the peak of the reflection profile 104, the refractive index modulation causes modulation of the cavity loss, which reduces or increases the effective (net gain) modulation of the laser. Thus, the laser chirp is converted into an effective enhancement of the differential gain, and thus the speed of the laser is increased. Detuned loading effects include effects that occur under modulation when the lasing mode 106 is aligned to the long wavelength edge of the peaks of the DBR reflection profile 104, which may include one or more of effective enhancement of differential gain, increased speed, and increased bandwidth.
The detuning loading effect is not limited to DBR lasers. Indeed, in accordance with at least some embodiments, a detuned loading effect may be achieved in semiconductor lasers where the lasing mode is aligned to the long wavelength edge of the peak of the reflection profile of a portion of the semiconductor laser.
Embodiments described herein may also utilize the photon-photon resonance (PPR) effect to improve performance. When a DML such as a DFB laser or DBR laser is modulated, the modulation sidebands broaden the spectrum of the DML around the main lasing mode. If side modes of the laser cavity are present in the modulation spectrum, such side bands may couple into the side modes and be resonantly amplified. This is depicted in fig. 2. This effect is called the PPR effect, and can enhance the modulation response around a frequency corresponding to the frequency difference between the main mode and the side mode. The frequency separation between the lasing mode and the PPR mode may be referred to as the PPR frequency. Embodiments described herein may have a PPR frequency in the range from 25GHz to 100GHz, such as about 30GHz, or in the range from 50GHz to 100GHz, or other suitable PPR frequency. For example, for cooling applications (cooled application), the PPR frequency may range from 50GHz to 100 GHz. As another example, for an uncooled application at 50 gigabaud, the bandwidth of the laser may be about 35GHz, and the PPR frequency may be about 30 GHz.
Embodiments described herein include DFB lasers having passive regions with weak optical feedback configured to take advantage of detuned loading effects. DFB lasers with passive regions are known, but such known DFB lasers cannot exploit the detuned loading effect.
Fig. 9 shows a prior art DFB laser 900 having an inactive region 902 and a DFB region 904. The DFB laser 900 may be referred to as a Passive Feedback Laser (PFL) 900. The DFB region 904 includes a DFB grating 906 etched into a Multiple Quantum Well (MQW) gain layer 908. A Highly Reflective (HR) mirror 910, for example, having a reflectivity of 95% is formed on the rear facet of the passive region 902. An anti-reflective (AR) coating 912 is formed on the front facet of the DFB region 904. An etalon 914 is formed in the passive region 902 by the HR mirror 910 and a portion of the DFB grating 906 behind the DFB region 904. The DFB grating 906 has about 500cm-1Strong kappa (kappa). Unless a strong kappa light is used,otherwise the strong reflection from the HR mirror 910 reduces the Side Mode Suppression Ratio (SMSR). The configuration of the PFL 900 with the HR mirror 910 and the DFB grating 906 with a strong kappa excites the external cavity modes that can resonantly amplify the modulation sidebands of the DFB mode (e.g., PPR effect), resulting in a 37GHz modulation BW at 1310 nm. The speed increase in PFL 900 is mainly due to the PPR effect, and the carrier-photon resonant frequency (F)r) Relatively low, e.g., 12 GHz. The strong kappa of the DFB grating 906 stabilizes the DFB mode even when the HR mirror 910 produces strong feedback. The DFB grating 906 is etched directly into the MQW layer 908, which may reduce gain characteristics and reliability. The MQW layer 908 may include InGaAsP; InGaAlAs cannot be used in the MQW layer 908 due to Al oxidation.
Fig. 9 also shows the reflection profile 916 of etalon 914. Due to the HR mirror 910, the reflection profile 916 is substantially flat. In particular, the etalon 914 operates as an all-pass filter or Gires-tournois (gt) interferometer, which typically modifies dispersion according to wavelength, but typically does not modify reflection according to wavelength. Due to the flatness of the reflection profile caused by the HR mirror 910, there are insufficient filter edges to which a lasing mode providing significant detuning loading effects can be aligned, thereby substantially eliminating the detuning loading effects in the PFL 900.
The strong kappa of the DFB grating 906 in the PFL 900 also reduces or eliminates the detuning loading effect in the PFL 900. In particular, strong kappa reduces the effect of reflected light on the threshold gain of the active region 904.
Fig. 3 illustrates an example DFB laser 300 configured to take advantage of the detuned loading effect, arranged in accordance with at least one embodiment described herein. As shown, the DFB laser 300 includes an inactive region 302 and a DFB region 304 (also referred to as an active region). The passive region 302 is coupled to the front 303 of the DFB region 304. The passive region 302 may have a length in a range from 100 microns to 250 microns, such as 120 microns. The DFB region 304 may have a length in a range from 50 microns to 200 microns, such as 100 microns.
The DFB region 304 may include a DFB grating 306, the DFB grating 306 being formed in, on, or above a MQW gain layer 308 or other suitable gain layer. The DFB grating 306 may include a first grating portion and a second grating portion having a phase shift therebetween. The DFB grating 306 may have a kappa length, such as kl, in the range from 1.0 to 1.8, or other suitable kl.
The HR mirror 310 is formed at the back or back 305 of the DFB region 304, e.g., on the back facet. The HR mirror 310 may be coupled to the back 305 of the DFB region 304. The HR mirror 310 may have a reflectivity of 30% or more than 30%, 50% or more than 50%, 70% or more than 70%, or even 90% or more than 90%. In other embodiments, DBR mirrors having similar reflectivity (e.g., 30% or greater than 30%, 50% or greater than 50%, 70% or greater than 70%, or even 90% or greater than 90% reflectivity) may replace HR mirror 310 and may be referred to as HR DBR mirrors. The term "HR mirror" as used herein includes HR coatings/mirrors as well as HR DBR mirrors.
A Low Reflection (LR) mirror 312 is formed at the front 307 of the passive region 302, e.g., on the front facet. The LR mirror 312 can be coupled to the front 307 of the passive region 302. The LR mirror 312 can have a reflectivity of 15% or less than 15%, 10% or less than 10%, or even 5% or less than 5%, such as 4% or 3%. In some embodiments, the LR mirror 312 has a reflectivity in the range from 0.5% to 15% or in the range from 3% to 8%. An etalon 314 is formed between a portion of the DFB grating 306 at the front of the DFB region 304 and the LR mirror 312. The DFB laser 300 forms a complex cavity design made up of the DFB laser itself, e.g., the DFB region 304 and the etalon 314. The etalon 314 is configured to dynamically modify the cavity loss due to frequency chirp when the DFB region 304 is modulated. The DFB laser 300 may be referred to as a DFB + R (e.g., DFB plus (weak) reflection) laser 300.
The DFB + R laser 300 may also include a modulation contact 309 and a bias contact 311 electrically coupled to the DFB region 304 and the passive region 302, respectively. A modulation signal 313 may be provided to the DFB region 304 through the modulation contact 309 to modulate the DFB region 304. A bias signal 315 may be provided to the inactive region 302 through a bias contact 311. Modulation of the DFB region 304 may modulate the cavity loss of the DFB + R laser 300 and may increase the F of the DFB + R laser 300r。
Fig. 4 illustrates various reflection profiles 400 associated with the PFL laser 900 of fig. 9 and the DFB + R laser 300 of fig. 3, arranged in accordance with at least one embodiment described herein. When viewed from the DFB region 304 toward the output of the DFB + R laser 300, the reflection profile 300 includes: the reflection profile 916 of the etalon 914 of the PFL 900 of fig. 9 (hereinafter PFL reflection profile 916), the reflection profile 402 of the DFB grating 306 (hereinafter DFB reflection profile 402), and the reflection profile 404 of the combined DFB grating 306 and LR mirror 312 (reflectivity of 3%) (hereinafter combined DFB + R reflection profile 404). As shown by the DFB + R reflection profile 404 in fig. 4, the etalon 314 formed by the DFB grating 306 and the LR mirror 312 produces a strong ripple and, therefore, a strong detuning loading effect. In contrast, because the etalon 914 with HR mirror 910 acts as a GT interferometer, the ripple disappears in the PFL reflection profile 916 where the waveguide loss is small. Thus, there is only a dispersion effect in the PFL laser 900 and the detuning loading effect in the imaginary part disappears when the HR coating 910 is applied to the end face of the passive region 902 opposite the DFB region 904.
Fig. 5 illustrates various reflection profiles 502, 504, 506 of another example DFB + R laser arranged in accordance with at least one embodiment described herein. The DFB + R laser may be the same as or similar to the DFB + R laser 300 of fig. 3, wherein the LR mirror of the DFB + R laser of fig. 5 has a reflectivity of 4%.
The reflection profile 502 is the reflection profile of the DFB grating of the DFB + R laser (hereinafter referred to as the DFB reflection profile 502). The reflection profile 504 is the reflection profile of the combined DFB grating and LR mirror (with 4% reflectivity) at low bias (hereinafter combined low bias DFB + R reflection profile 504) when viewed from the DFB region towards the output of the DFB + R laser. The reflection profile 506 is the reflection profile of the combined DFB grating and LR mirror (with 4% reflectivity) at high bias (hereinafter the combined high bias DFB + R reflection profile 506) when viewed from the DFB region towards the output of the DFB + R laser. When the bias increases due to gain compression of the DFB + R laser, there is a shift from the combined low bias DFB + R reflection profile 504 to the combined high bias DFB + R reflection profile 504. Since the index of the passive region does not change dynamically, the offset is less than the frequency chirp that occurs under modulation.
As shown in fig. 5, each of the combined DFB + R reflection profiles 504, 506 has periodic reflection peaks (or ripples) and valleys, and the main lasing mode 508 of the DFB region is aligned to the long wavelength edge of one of the periodic peaks. The edge of the peak to which the main lasing mode 508 is aligned may be relatively steep. For example, at the main lasing mode 508, the edges of the peaks may have at least 0.002GHz-1Of (2), e.g. about 0.006GHz-1The slope of (a). In some embodiments, the slope may be from 0.002GHz-1To 0.009GHz-1Within the range of (1). When the DFB + R laser is intensity-modulated from an intensity corresponding to 1 bit to an intensity corresponding to 0 bit, the frequency chirp shifts the main lasing mode 508 to a shorter wavelength, for example, to the chirped lasing mode 510. The frequency chirp increases the reflectivity of the etalon of the DFB + R laser, thus dynamically reducing the cavity loss. This is an effective increase in differential gain and, therefore, increases the speed of the laser in accordance with the detuned loading effect. Thus, in some embodiments, modulation of the DFB region of a DFB + R laser as described herein modulates the cavity loss of the DFB + R laser and increases the intrinsic speed of the DFB + R laser.
Fig. 5 also shows the PPR mode for each of the combined low-bias DFB + R reflection profile 504 and high-bias DFB + R reflection profile 506 on the long wavelength side of the primary lasing mode 508. The PPR frequency may be in the range from 50GHz to 100 GHz. Thus, unlike the PFL 900 of fig. 9 that uses the PPR effect without the detuned loading effect, fig. 5 illustrates that the detuned loading effect and the PPR effect may coexist for embodiments of DFB + R lasers described herein.
FIG. 5 also shows the 3dB BW and F at 25C for a DFB + R laser as described hereinrWherein the LR mirror has a reflectivity of 5%, the DFB region has a length of 80 microns, and the passive region has a length of 120 microns. As shown, the DFB + R laser has an F of about 40GHzrAnd a 3dB BW of about 55 GHz.
Fig. 6 illustrates various spectra 602 and S21 responses 604 of a DFB + R laser arranged in accordance with at least one embodiment described herein. Spectrum 602 includes a modulation spectrum 606 of a DFB region, which may be implemented in a DFB + R laser, for example, but without feedback from an etalon, such as a DFB + R laser. Spectrum 602 also includes a modulation spectrum 608 of the DFB + R laser (e.g., the same DFB region associated with modulation spectrum 606 but with feedback from the etalon). The modulation spectrum 606 of the DFB region without feedback has a primary lasing mode 610 and a PPR mode 612. For a reflectivity of the LR mirror of 5%, the SMSR may be greater than 40 dB.
The S21 response 604 includes the S21 response 614 of a conventional DFB laser (e.g., without etalon feedback) and the various S21 responses 616 of a DFB + R laser, where the phase shift imparted to the light propagating in the DFB + R laser in the passive region is about 180 degrees, resulting in the lasing mode being aligned to the short wavelength side of one of the etalon ripples and resulting in reduced performance. The S21 responses also include various S21 responses 618 in which the phase shift imparted to light propagating in the DFB + R laser in the passive region is tuned to about 20 degrees, resulting in alignment of the lasing mode to the long wavelength side of one of the etalon ripples and increased speed, e.g., FrAnd faster. Aligning the primary lasing mode to the short wavelength side of one of the etalon ripples reduces performance relative to conventional DFB lasers (F) as shown by S21 response 604 (F)rSlower) and aligning the primary lasing mode to the long wavelength side of one of the etalon ripples improves performance (F) over conventional DFB lasersrFaster).
Fig. 7 illustrates another example DFB + R laser 700 configured to take advantage of the detuned loading effect, arranged in accordance with at least one embodiment described herein. As shown, DFB + R laser 700 includes an inactive region 702 and a DFB region 704 (also referred to as an active region). The passive region 702 is coupled to the front 703 of the DFB region 704. The passive region 702 may have a length in a range from 100 microns to 250 microns, such as 120 microns. The DFB region 704 may have a length in a range from 50 microns to 200 microns, such as 100 microns.
The DFB region 704 may include a DFB grating 706, the DFB grating 706 being formed in, on, or above the MQW gain layer 708 or other suitable gain layer. The DFB grating 706 may include a first grating portion and a second grating portion having a phase shift therebetween. The DFB grating 706 may have a κ L in a range from 0.5 to 2.0 or other suitable value.
The HR mirror 710 is formed at the back or back 705 of the DFB region 704, e.g., on the back facet. The HR mirror 710 may be coupled to the rear 705 of the DFB region 704. The HR mirror 710 may have a reflectivity of 30% or more, 50%, 70% or more, 70%, or even 90% or more than 90%. In other embodiments, DBR mirrors having similar reflectivity (e.g., 30% or greater than 30%, 50% or greater than 50%, 70% or greater than 70%, or even 90% or greater than 90% reflectivity) may replace HR mirror 710 and may be referred to as HR DBR mirrors.
A Low Reflection (LR) mirror 712 is formed at a front section 707 of the passive region 702, for example, in the passive region 702 near the front or output facet of the DFB + R laser 700. The LR mirror 712 can be coupled to the front 707 of the passive region 702. The LR mirror 712 can have a reflectivity of 15% or less than 15%, 10% or less than 10%, or even 5% or less than 5%, such as 4% or 3%. In some embodiments, the LR mirror 712 has a reflectivity in the range from 0.5% to 15% or in the range from 3% to 8%. In the example of fig. 7, the LR mirror 712 includes an LR DBR formed in the passive region 702. The length of the LR DBR of LR mirror 712 can be relatively short, such as 20 microns or less than 20 microns. The kappa of the LR DBR of LR mirror 712 may be 50cm-1Or more than 50cm-1. An AR coating 716 may be formed on the output facet of the DFB + R laser 700.
Similar to the example of fig. 3, an etalon 718 is formed between the portion of the DFB grating 706 at the front of the DFB region 704 and the LR mirror 712. The DFB + R laser 700 forms a complex cavity design made up of the DFB laser itself, e.g., the DFB region 704 and the etalon 714. The etalon 714 is configured to dynamically modify the cavity loss due to frequency chirp when the DFB region 704 is modulated. Thus, the DFB + R laser 700 of fig. 7 may take advantage of the detuned loading effect to improve performance.
The DFB + R laser 700 may also include a modulation contact 713 and a bias contact 715 electrically coupled to the DFB region 704 and the passive region 702, respectively. A modulation signal 717 can be provided to the DFB region 704 through the modulation contact 713 to modulate the DFB region 704. A bias signal 719 may be provided to the inactive region 702 through the bias contact 715. The modulation of the DFB region 704 may be modulatedThe cavity loss of the DFB + R laser 700 is made and the F of the DFB + R laser 700 can be increasedr。
Fig. 7 also shows the modulation spectrum 720 and various S21 responses 722 of the DFB + R laser 700. As shown by modulation spectrum 720, DFB + R laser 700 suppresses modes outside the broadband DBR mirror (approximately 10nm wide).
The S21 responses 722 include various S21 responses of the DFB + R laser 700 at different kappa' S of the LR DBR of the LR mirror 712. As shown, the peak of the S21 response 722 generally becomes more pronounced and shifts to higher frequencies as the kappa is higher.
Fig. 8 illustrates another example DFB + R laser 800 configured to take advantage of the detuned loading effect, arranged in accordance with at least one embodiment described herein. The DFB + R laser includes a modulated grating y-branch (MGY) laser configuration, for example, coupled to two modulated grating branches (MG DBR left and MG DBR right in fig. 8) of the DFB laser through a passive region including S-bend and multi-mode interference (MMI) couplers.
The MG DBR left branch and the MG DBR right branch may each include a corresponding DBR grating, which may each be located at different distances from the DFB laser to excite multiple PPRs at various frequencies to expand the response.
The MMI coupler may comprise a 1 x 2, 1 x 3, or more generally a 1 x n (where n is an integer) MMI coupler.
The lasing modes of the DFB laser can be aligned to the long wavelength edge of the reflection profile of the MG DBR left branch and the MG DBR right branch to take advantage of the detuned loading effect.
Supplementary notes: the application can also be realized by the following technical scheme:
1. a distributed feedback plus reflection laser comprising:
a distributed feedback region configured to operate in a lasing mode;
a high mirror coupled to a rear of the distributed feedback region;
a passive region coupled to a front of the distributed feedback region; and
a low mirror formed in front of the inactive region;
wherein the passive region, the portion of the distributed feedback region at the front of the distributed feedback region, and the low mirror form an etalon having a reflection profile with periodic peaks and valleys, and wherein the lasing mode of the distributed feedback region is aligned to a long wavelength edge of one of the periodic peaks of the reflection profile of the etalon.
2. The distributed feedback plus reflection laser of claim 1, wherein the low mirror has a reflectivity of 15% or less than 15%.
3. The distributed feedback plus reflection laser of claim 1, wherein the low mirror has a reflectivity of 10% or less than 10%.
4. The distributed feedback plus reflection laser of claim 1, wherein the passive region is configured to impart a phase shift of about 20 degrees to light propagating in the distributed feedback plus reflection laser.
5. The distributed feedback plus reflection laser of claim 1, wherein the high-reflectivity mirror has a reflectivity of 30% or greater than 30%.
6. The distributed feedback-plus-reflection laser of claim 1, further comprising a modulation contact coupled to the distributed feedback region and configured to provide a modulation signal to the distributed feedback region to modulate the distributed feedback region, wherein modulation of the distributed feedback region modulates a cavity loss of the distributed feedback-plus-reflection laser and increases a carrier-photon resonant frequency F of the distributed feedback-plus-reflection laserr。
7. The distributed feedback plus reflection laser of claim 1, wherein the length of the passive region is in a range from 100 microns to 250 microns.
8. The distributed feedback plus reflection laser of claim 1, wherein the high reflection mirror comprises a high reflection distributed bragg reflector mirror.
9. The distributed feedback plus reflection laser of claim 1 further comprising a photon-photon resonant frequency of at least 25 gigahertz.
10. A distributed feedback plus reflection laser comprising:
an active region comprising a distributed feedback grating and configured to operate in a lasing mode;
an inactive region coupled end-to-end with the active region;
a low mirror formed on or in the passive region; and
an etalon comprising a portion of the distributed feedback grating, the passive region, and the low mirror,
wherein the lasing mode of the active region is aligned to a long wavelength edge of a reflection peak of the etalon.
11. The distributed feedback plus reflection laser of claim 10 wherein the long wavelength edge of the reflection peak of the etalon has a wavelength greater than 0.002GHz in the lasing mode-1The slope of (a).
12. The distributed feedback plus reflection laser of claim 10, wherein the low-reflection mirror comprises a low-reflection coating formed on an output facet of the distributed feedback plus reflection laser.
13. The distributed feedback plus reflection laser as claimed in claim 10, wherein the low reflector comprises a low reflection distributed bragg reflector formed in the passive region, and the distributed feedback plus reflection laser further comprises an anti-reflection coating formed on an output facet of the passive region.
14. The distributed feedback plus reflection laser of claim 13, wherein the length of the low reflection distributed bragg reflector is 20 microns or less than 20 microns.
15. The dfb laser of claim 13, wherein the low-reflectivity dbr has a kappa of at least 50cm-1。
16. The distributed feedback plus reflection laser of claim 10 wherein the low mirror has a reflectivity of 5% or less than 5%.
17. The distributed feedback plus reflection laser of claim 10, further comprising a high mirror formed at the rear of the distributed feedback region, wherein the high mirror has a reflectivity of 30% or greater than 30%.
18. The distributed feedback plus reflection laser of claim 17 wherein the highly reflective mirror comprises a highly reflective distributed bragg reflector mirror.
19. The distributed feedback-plus-reflection laser of claim 10, further comprising a modulation contact coupled to the active region and configured to provide a modulation signal to the active region to modulate the active region, wherein modulation of the active region modulates a cavity loss of the distributed feedback-plus-reflection laser and increases a carrier-photon resonant frequency F of the distributed feedback-plus-reflection laserr。
20. The distributed feedback plus reflection laser of claim 10 further comprising a photon-photon resonant frequency spaced from the lasing mode of the active region by a frequency spacing of at least 25 gigahertz.

Claims (10)

1. A distributed feedback plus reflection laser comprising:
a distributed feedback region configured to operate in a lasing mode;
a high mirror coupled to a rear of the distributed feedback region;
a passive region coupled to a front of the distributed feedback region; and
a low mirror formed in front of the inactive region;
wherein the passive region, the portion of the distributed feedback region at the front of the distributed feedback region, and the low mirror form an etalon having a reflection profile with periodic peaks and valleys, and wherein the lasing mode of the distributed feedback region is aligned to a long wavelength edge of one of the periodic peaks of the reflection profile of the etalon.
2. A distributed feedback plus reflection laser as claimed in claim 1 wherein the low mirror has a reflectivity of 15% or less than 15%.
3. A distributed feedback plus reflection laser as claimed in claim 1 wherein the low mirror has a reflectivity of 10% or less than 10%.
4. The distributed feedback plus reflection laser of claim 1 wherein the passive region is configured to impart a phase shift of about 20 degrees to light propagating in the distributed feedback plus reflection laser.
5. A distributed feedback plus reflection laser as claimed in claim 1 wherein the high reflection mirror has a reflectivity of 30% or greater than 30%.
6. The distributed feedback-plus-reflection laser of claim 1, further comprising a modulation contact coupled to the distributed feedback region and configured to provide a modulation signal to the distributed feedback region to modulate the distributed feedback region, wherein modulation of the distributed feedback region modulates a cavity loss of the distributed feedback-plus-reflection laser and increases a carrier-photon resonant frequency F of the distributed feedback-plus-reflection laserr。
7. A distributed feedback plus reflection laser as claimed in claim 1 wherein the length of the passive region is in the range from 100 to 250 microns.
8. A distributed feedback plus reflection laser as claimed in claim 1 wherein the highly reflective mirror comprises a highly reflective distributed bragg reflector mirror.
9. The distributed feedback plus reflection laser of claim 1 further comprising a photon-photon resonant frequency of at least 25 gigahertz.
10. A distributed feedback plus reflection laser comprising:
an active region comprising a distributed feedback grating and configured to operate in a lasing mode;
an inactive region coupled end-to-end with the active region;
a low mirror formed on or in the passive region; and
an etalon comprising a portion of the distributed feedback grating, the passive region, and the low mirror,
wherein the lasing mode of the active region is aligned to a long wavelength edge of a reflection peak of the etalon.
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