CN112599637A - 制造太阳能电池片的方法和太阳能电池小片 - Google Patents
制造太阳能电池片的方法和太阳能电池小片 Download PDFInfo
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- CN112599637A CN112599637A CN202011451741.3A CN202011451741A CN112599637A CN 112599637 A CN112599637 A CN 112599637A CN 202011451741 A CN202011451741 A CN 202011451741A CN 112599637 A CN112599637 A CN 112599637A
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- 238000000034 method Methods 0.000 title claims abstract description 38
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 239000002893 slag Substances 0.000 claims abstract description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000428 dust Substances 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000000967 suction filtration Methods 0.000 claims description 3
- 238000002679 ablation Methods 0.000 abstract description 10
- 238000005452 bending Methods 0.000 abstract description 5
- 238000003384 imaging method Methods 0.000 abstract description 5
- 239000012634 fragment Substances 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002210 silicon-based material Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000005431 greenhouse gas Substances 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/16—Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
- B23K26/364—Laser etching for making a groove or trench, e.g. for scribing a break initiation groove
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Laser Beam Processing (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202011451741.3A CN112599637B (zh) | 2020-12-09 | 2020-12-09 | 制造太阳能电池片的方法和太阳能电池小片 |
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CN202011451741.3A CN112599637B (zh) | 2020-12-09 | 2020-12-09 | 制造太阳能电池片的方法和太阳能电池小片 |
Publications (2)
Publication Number | Publication Date |
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CN112599637A true CN112599637A (zh) | 2021-04-02 |
CN112599637B CN112599637B (zh) | 2022-05-31 |
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CN202011451741.3A Active CN112599637B (zh) | 2020-12-09 | 2020-12-09 | 制造太阳能电池片的方法和太阳能电池小片 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114888454A (zh) * | 2022-05-25 | 2022-08-12 | 深圳市杰普特光电股份有限公司 | 一种电池极片的切割方法 |
CN115458400A (zh) * | 2022-09-28 | 2022-12-09 | 上海积塔半导体有限公司 | 用于在半导体基底中制造沟槽的方法和半导体器件 |
Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050275048A1 (en) * | 2004-06-14 | 2005-12-15 | Farnworth Warren M | Microelectronic imagers and methods of packaging microelectronic imagers |
CN101442085A (zh) * | 2008-12-25 | 2009-05-27 | 广东金刚玻璃科技股份有限公司 | 透光单晶硅太阳电池的制造方法 |
US20120174973A1 (en) * | 2009-09-30 | 2012-07-12 | Lg Innotek Co., Ltd. | Solar Cell Apparatus and Method For Manufacturing the Same |
WO2012162276A2 (en) * | 2011-05-20 | 2012-11-29 | Solexel, Inc. | Spatially selective laser annealing applications in high-efficiency solar cells |
KR20120134930A (ko) * | 2011-06-03 | 2012-12-12 | 주성엔지니어링(주) | 태양전지 및 태양전지의 제조 방법 |
KR20120136982A (ko) * | 2011-06-10 | 2012-12-20 | 주성엔지니어링(주) | 태양전지의 제조 방법 및 태양전지 생산 장비 |
US20140273329A1 (en) * | 2013-03-13 | 2014-09-18 | Tsmc Solar Ltd. | Solar cell laser scribing methods |
EP2819181A1 (en) * | 2013-06-25 | 2014-12-31 | Solexel, Inc. | Laser annealing applications in high-efficiency solar cells |
US20180118562A1 (en) * | 2015-04-09 | 2018-05-03 | Siltectra Gmbh | Method for the low-loss production of multi-component wafers |
US20180166598A1 (en) * | 2016-12-09 | 2018-06-14 | mPower Technology, Inc. | High Performance Solar Cells, Arrays and Manufacturing Processes Therefor |
CN108568606A (zh) * | 2017-12-11 | 2018-09-25 | 武汉帝尔激光科技股份有限公司 | 一种mwt电池激光开孔及除渣方法及设备 |
CN111681965A (zh) * | 2020-06-19 | 2020-09-18 | 西安微电子技术研究所 | 一种高密度通孔互连的双面光电基片的制造方法 |
CN111834211A (zh) * | 2020-07-24 | 2020-10-27 | 浙江晶科能源有限公司 | 硅片的预处理方法及叠焊太阳能组件的制备方法 |
-
2020
- 2020-12-09 CN CN202011451741.3A patent/CN112599637B/zh active Active
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050275048A1 (en) * | 2004-06-14 | 2005-12-15 | Farnworth Warren M | Microelectronic imagers and methods of packaging microelectronic imagers |
CN101442085A (zh) * | 2008-12-25 | 2009-05-27 | 广东金刚玻璃科技股份有限公司 | 透光单晶硅太阳电池的制造方法 |
US20120174973A1 (en) * | 2009-09-30 | 2012-07-12 | Lg Innotek Co., Ltd. | Solar Cell Apparatus and Method For Manufacturing the Same |
WO2012162276A2 (en) * | 2011-05-20 | 2012-11-29 | Solexel, Inc. | Spatially selective laser annealing applications in high-efficiency solar cells |
KR20120134930A (ko) * | 2011-06-03 | 2012-12-12 | 주성엔지니어링(주) | 태양전지 및 태양전지의 제조 방법 |
KR20120136982A (ko) * | 2011-06-10 | 2012-12-20 | 주성엔지니어링(주) | 태양전지의 제조 방법 및 태양전지 생산 장비 |
US20140273329A1 (en) * | 2013-03-13 | 2014-09-18 | Tsmc Solar Ltd. | Solar cell laser scribing methods |
EP2819181A1 (en) * | 2013-06-25 | 2014-12-31 | Solexel, Inc. | Laser annealing applications in high-efficiency solar cells |
US20180118562A1 (en) * | 2015-04-09 | 2018-05-03 | Siltectra Gmbh | Method for the low-loss production of multi-component wafers |
US20180166598A1 (en) * | 2016-12-09 | 2018-06-14 | mPower Technology, Inc. | High Performance Solar Cells, Arrays and Manufacturing Processes Therefor |
CN108568606A (zh) * | 2017-12-11 | 2018-09-25 | 武汉帝尔激光科技股份有限公司 | 一种mwt电池激光开孔及除渣方法及设备 |
CN111681965A (zh) * | 2020-06-19 | 2020-09-18 | 西安微电子技术研究所 | 一种高密度通孔互连的双面光电基片的制造方法 |
CN111834211A (zh) * | 2020-07-24 | 2020-10-27 | 浙江晶科能源有限公司 | 硅片的预处理方法及叠焊太阳能组件的制备方法 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114888454A (zh) * | 2022-05-25 | 2022-08-12 | 深圳市杰普特光电股份有限公司 | 一种电池极片的切割方法 |
CN115458400A (zh) * | 2022-09-28 | 2022-12-09 | 上海积塔半导体有限公司 | 用于在半导体基底中制造沟槽的方法和半导体器件 |
CN115458400B (zh) * | 2022-09-28 | 2023-09-12 | 上海积塔半导体有限公司 | 用于在半导体基底中制造沟槽的方法和半导体器件 |
WO2024067703A1 (zh) * | 2022-09-28 | 2024-04-04 | 上海积塔半导体有限公司 | 用于在半导体基底中制造沟槽的方法和半导体器件 |
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Application publication date: 20210402 Assignee: TONGWEI SOLAR ENERGY (HEFEI) Co.,Ltd. Assignor: CHENGDU YEFAN SCIENCE AND TECHNOLOGY Co.,Ltd. Contract record no.: X2023990000264 Denomination of invention: Method for manufacturing solar cell chips and solar cell chips Granted publication date: 20220531 License type: Common License Record date: 20230221 |
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Effective date of registration: 20231204 Address after: 230000 No.888 Changning Avenue, hi tech Zone, Hefei City, Anhui Province Patentee after: TONGWEI SOLAR ENERGY (HEFEI) Co.,Ltd. Address before: 610041 No. 6, D District, Tianfu Software Park, 599 Century City South Road, Chengdu High-tech Zone, Sichuan, China. Patentee before: CHENGDU YEFAN SCIENCE AND TECHNOLOGY Co.,Ltd. |
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