CN112599412A - 一种防击穿的氮化镓基功率器件制备方法 - Google Patents
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 31
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 22
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- 229910002704 AlGaN Inorganic materials 0.000 claims description 16
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- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 230000005684 electric field Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
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- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
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Abstract
本发明属于半导体的技术领域,公开了一种防击穿的氮化镓基功率器件制备方法,在衬底上外延生长氮化镓基层,再沉积氧化铟锡ITO层,然后通过刻蚀工艺仅保留源电极和漏电极区域的氧化铟锡ITO层,最后,制备源电极、漏电极和栅电极。本发明的制备方法操作简单,成本低廉,效率高,适应性强,极具应用前景。
Description
技术领域
本发明涉及半导体的技术领域,尤其涉及一种防击穿的氮化镓基功率器件制备方法。
背景技术
以Si技术为基础的半导体技术经过长时间的发展,成为了整个半导体产业的助推剂。近年来,随着科技的进步,第一代半导体材料Si、Ge和第二代半导体材料GaAs、InSb等已不能完全满足产业迅速发展的需要,于是宽禁带半导体材料(SiC、GaN等)渐渐的引起了人们的重视。SiC和GaN材料由于具有更高的电子迁移率、更大的导热系数、更高的击穿电场等,成为了电力电子器件领域中的研究热点。SiC基电力电子器件发展较早,但是其较高的成本严重制约了它的发展,尤其是它在市场上的推广。GaN电力电子器件发展较晚,其研究开始于2000年左右,但是GaN和SiC具有相类似的优越特性,而且成本随着研究的深入将会有很大的降低,因此,GaN基功率器件在电力电子应用领域具有非常大的潜力。
电力电子器件通常要求工作在开、关状态下,开态时要求电力电子器件的特征导通电阻要低,关态时要求击穿电压较高。击穿电压是电力电子器件的重要参数,根据GaN材料的性能,击穿电场在3MV/cm的量级。目前的GaN基功率器件往往在远没达到此击穿电场的条件下,就已经被击穿,其中一个重要原因是GaN基功率器件在制作过程中,为了形成源漏欧姆接触电极,在做完欧姆金属蒸发后,需要对欧姆金属进行退火,才能形成真正的欧姆接触,但是退火之后,源漏电极金属渗入材料的深度不同,会使得源漏电极在下方的AlGaN材料中形成金属尖峰。这样,器件工作时,随着漏压的加大,电极的金属尖峰会引入电场峰值,最终导致碰撞电离和雪崩击穿,造成器件击穿。
发明内容
本发明的目的在于克服现有技术中退火处理造成源漏电极金属渗入材料的深度不同,会使得源漏电极在下方的AlGaN材料中形成金属尖峰,最终导致碰撞电离和雪崩击穿的缺陷,提供一种防击穿的氮化镓基功率器件制备方法。
为实现上述目的,本发明提供如下技术方案:
一种防击穿的氮化镓基功率器件制备方法,在衬底上外延生长氮化镓基层,再沉积氧化铟锡ITO层,然后通过刻蚀工艺仅保留源电极和漏电极区域的氧化铟锡ITO层,最后,制备源电极、漏电极和栅电极。
进一步,包括以下步骤:
步骤一、在衬底上依次外延生长GaN层和AlGaN层,再进行光刻,然后再刻蚀AlGaN层的边缘部分至GaN层的一部分也刻蚀掉;
步骤二、沉积氧化铟锡ITO层,然后进行刻蚀,仅保留源电极和漏电极区域的氧化铟锡ITO层,再对保留下来的氧化铟锡ITO层进行退火处理;
步骤三、在源电极和漏电极区域的氧化铟锡ITO层上制备源电极、漏电极,在AlGaN层上制备栅电极;
步骤四、沉积钝化层,并将源电极、漏电极和栅电极上方的钝化层刻蚀掉。
进一步,利用电子束蒸发台,蒸镀形成氧化铟锡ITO层,所述氧化铟锡ITO层的厚度设置为15nm至25nm。
进一步,所述源电极、漏电极均设置为利用电子束蒸发设备蒸镀后,再进行退火处理制成的欧姆接触电极,均采用Ti/Al/Ti/Au或者Ti/Al/Ni/Au多层金属材料制成,所述栅电极为利用电子束蒸发设备蒸镀制成,采用Ni/Au或者Ni/Pt/Au多层金属材料制成。
进一步,所述衬底采用Si、蓝宝石或者SiC材料制成,所述钝化层采用SiN材料制成。
进一步,所述步骤一中的刻蚀深度要大于200nm。
本发明有益的技术效果在于:
在制备源漏欧姆接触电极之前,在欧姆电极区域制作一层氧化铟锡ITO层,该氧化铟锡ITO层能在不影响电极导电性的前提下,阻止欧姆接触电极金属退火过程中形成的金属尖峰渗入到下方AlGaN层中,从而在器件工作时,不会形成电场峰值,避免导致碰撞电离和雪崩击穿,提升了整个器件的击穿电压。本发明的制备方法操作简单,成本低廉,效率高,适应性强,极具应用前景。
附图说明
图1为本发明的总体流程示意图;
图2为本发明的制备方法的具体图示示意图。
具体实施方式
下面结合附图及较佳实施例详细说明本发明的具体实施方式。
本发明在充分考量欧姆接触电极制备工艺的前提下,提出了一种防击穿的氮化镓基功率器件制备方法,如图1所示,在衬底上外延生长氮化镓基层,再沉积氧化铟锡ITO层,然后通过刻蚀工艺仅保留源电极和漏电极区域的氧化铟锡ITO层,最后,制备源电极、漏电极和栅电极。这样,在制备源漏欧姆接触电极之前,在欧姆电极区域制作一层氧化铟锡ITO层,该氧化铟锡ITO层能在不影响电极导电性的前提下,阻止欧姆接触电极金属退火过程中形成的金属尖峰渗入到下方AlGaN层中,从而在器件工作时,不会形成电场峰值,避免导致碰撞电离和雪崩击穿,提升了整个器件的击穿电压。
如图2所示,具体包括以下步骤:
步骤一、在衬底上依次外延生长GaN层和AlGaN层,可将整个衬底放入MOCVD设备中进行外延生长,再进行光刻,然后再利用ICP设备刻蚀AlGaN层的边缘部分至GaN层的一部分也刻蚀掉,以阻断AlGaN/GaN界面天然形成的二维电子气,刻蚀深度要大于200nm;
该衬底可采用Si、蓝宝石或者SiC材料制成。
步骤二、沉积氧化铟锡ITO层,然后进行刻蚀,仅保留源电极和漏电极区域的氧化铟锡ITO层,再对保留下来的氧化铟锡ITO层进行退火处理;
可利用电子束蒸发台,蒸镀形成氧化铟锡ITO层,该氧化铟锡ITO层的厚度设置为1-1000nm,优先20nm左右。氧化铟锡ITO层蒸镀完成后,进行光刻以及刻蚀工艺,将源漏欧姆接触电极区域的氧化铟锡ITO层保留下来,其余区域的氧化铟锡ITO层去除,然后进行退火处理,退火后的氧化铟锡ITO层的电阻达到最小,导电性能达到最好。
步骤三、在源电极和漏电极区域的氧化铟锡ITO层上制备源电极、漏电极,在AlGaN层上制备栅电极;
先对整个片子进行光刻,利用电子束蒸发台在欧姆接触区域蒸镀形成源漏欧姆接触电极,两个电极均采用多层金属结构,如Ti/Al/Ni/Au等。蒸镀完成后,对源漏电极进行退火,以形成欧姆接触电极,退火过程中,由于欧姆接触电极下方氧化铟锡ITO层的存在,电极金属不会渗入AlGaN层,从而不会形成电场尖峰,提升了整个器件的击穿电压。
继续对片子进行光刻,并利用电子束蒸发设备在AlGaN层上的栅电极区域蒸镀形成栅电极,该栅电极也采用多层金属结构,如Ni/Au或者Ni/Pt/Au等。
步骤四、沉积钝化层,并将源电极、漏电极和栅电极上方的钝化层刻蚀掉。
在整个片子表面利用PECVD设备沉积一层SiN薄膜,作为器件的钝化层,然后利用光刻及刻蚀工艺,将源、漏、栅电极上方的SiN薄膜去除,最后得到完整的器件结构。
以上所述仅为本发明的优选实施例,所述实施例并非用于限制本发明的保护范围,因此凡是运用本发明的说明书及附图内容所作的等同结构变化,同理均应包含在本发明所附权利要求的保护范围内。
Claims (6)
1.一种防击穿的氮化镓基功率器件制备方法,其特征在于:在衬底上外延生长氮化镓基层,再沉积氧化铟锡ITO层,然后通过刻蚀工艺仅保留源电极和漏电极区域的氧化铟锡ITO层,最后,制备源电极、漏电极和栅电极。
2.根据权利要求1所述的防击穿的氮化镓基功率器件制备方法,其特征在于包括以下步骤:
步骤一、在衬底上依次外延生长GaN层和AlGaN层,再进行光刻,然后再刻蚀AlGaN层的边缘部分至GaN层的一部分也刻蚀掉;
步骤二、沉积氧化铟锡ITO层,然后进行刻蚀,仅保留源电极和漏电极区域的氧化铟锡ITO层,再对保留下来的氧化铟锡ITO层进行退火处理;
步骤三、在源电极和漏电极区域的氧化铟锡ITO层上制备源电极、漏电极,在AlGaN层上制备栅电极;
步骤四、沉积钝化层,并将源电极、漏电极和栅电极上方的钝化层刻蚀掉。
3.根据权利要求2所述的防击穿的氮化镓基功率器件制备方法,其特征在于:利用电子束蒸发台蒸镀形成氧化铟锡ITO层,所述氧化铟锡ITO层的厚度设置为1-1000nm。
4.根据权利要求2所述的防击穿的氮化镓基功率器件制备方法,其特征在于:所述源电极、漏电极均设置为利用电子束蒸发设备蒸镀后,再进行退火处理制成的欧姆接触电极,均采用Ti/Al/Ti/Au或者Ti/Al/Ni/Au多层金属材料制成,所述栅电极为利用电子束蒸发设备蒸镀制成,采用Ni/Au或者Ni/Pt/Au多层金属材料制成。
5.根据权利要求2所述的防击穿的氮化镓基功率器件制备方法,其特征在于:所述衬底采用Si、蓝宝石或者SiC材料制成,所述钝化层采用SiN材料制成。
6.根据权利要求5所述的防击穿的氮化镓基功率器件制备方法,其特征在于:所述步骤一中的刻蚀深度要大于200nm。
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