CN112593285A - Method for fixing GaSb substrate in molecular beam epitaxy system and sample holder - Google Patents
Method for fixing GaSb substrate in molecular beam epitaxy system and sample holder Download PDFInfo
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- CN112593285A CN112593285A CN202011589006.9A CN202011589006A CN112593285A CN 112593285 A CN112593285 A CN 112593285A CN 202011589006 A CN202011589006 A CN 202011589006A CN 112593285 A CN112593285 A CN 112593285A
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- gasb substrate
- tantalum sheet
- substrate
- barrel
- tantalum
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- 239000000758 substrate Substances 0.000 title claims abstract description 89
- 229910005542 GaSb Inorganic materials 0.000 title claims abstract description 64
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000001451 molecular beam epitaxy Methods 0.000 title claims abstract description 20
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 75
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 75
- 239000000463 material Substances 0.000 claims abstract description 32
- 238000003825 pressing Methods 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 12
- 229910052750 molybdenum Inorganic materials 0.000 claims description 12
- 239000011733 molybdenum Substances 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 230000003100 immobilizing effect Effects 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 239000004579 marble Substances 0.000 description 3
- 229910017115 AlSb Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- -1 etc. Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
The invention provides a method for installing and fixing a GaSb substrate in a molecular beam epitaxy system and a sample frame used by the method, aiming at the defects of easy softening of the substrate and difficult guarantee of temperature uniformity of the substrate in the prior art, the sample frame comprises a barrel, a tantalum sheet and a pressing and fixing device, wherein the barrel and the pressing and fixing device are made of materials which are not volatilized under ultrahigh vacuum and do not emit gas, a supporting structure is arranged on the inner surface of the barrel, the tantalum sheet is arranged on the supporting structure, the pressing and fixing device is positioned above the tantalum sheet to fix the tantalum sheet in the barrel, the method is adopted to fix the GaSb substrate, Ga liquid is firstly coated on an intermediate material, then the Ga liquid is uniformly coated on the tantalum sheet through the intermediate material, the difficult problem that the Ga liquid is poor in wettability and is difficult to be uniformly coated between the tantalum sheet and the GaSb substrate is ingeniously solved, the GaSb substrate is uniformly and stably adhered on the tantalum sheet, finally, the problem of temperature uniformity of the GaSb substrate is solved, and a foundation is provided for realizing the growth of high-quality Sb compound materials.
Description
Technical Field
The invention relates to a method for installing and fixing a GaSb substrate in a molecular beam epitaxy system and a sample holder used by the method.
Background
In the molecular beam epitaxy apparatus, the substrate is heated mainly by heat radiation from a heater parallel to the substrate. Thermal radiation field gradients exist between the substrate heater and the substrate, and non-uniformity of the temperature field across the plane of the substrate heater also exists, which can result in non-uniform substrate temperatures. In the growing process, the substrate is usually arranged on a sample holder which is a tray, and the substrate tray is uniformly heated by rotating the substrate tray, so that the condition that the heating temperature of the substrate is not uniform is improved, but the problem cannot be completely solved. In the prior art, a molybdenum holder is used as a substrate tray, i.e., a sample holder, and the molybdenum holder is a cylindrical disc made of Mo metal, the thickness of the cylindrical disc is generally 2-3mm, and the cylindrical disc has the characteristics of large thermal capacity and high temperature stability, so that the GaSb substrate is fixed on the molybdenum holder by adhering the molybdenum holder and the substrate with Ga or In liquid metal with a low melting point so as to improve the temperature uniformity of the substrate. The substrate is fixed by adopting the mode, and the method has the advantages that the melting points of Ga and In are respectively 30 ℃ and 156 ℃ under normal pressure, and the substrate temperature is about 400-550 ℃ In the molecular beam epitaxy growth process of the III-V material, so that Ga and In are liquid In the molecular beam epitaxy process, good thermal contact can be provided for the substrate, and the strain introduced and dislocation generated In the molecular beam epitaxy film growth process can be well reduced by a non-rigid mode of clamping the substrate.
However, when processing materials of 6.1 a material systems such as InAs, GaSb, AlSb, the following problems exist with the above described fixing scheme and sample support: for 6.1A material systems such as InAs, GaSb, AlSb, etc., GaSb is a commonly used lattice-matched substrate. Substrate softening can occur by adopting In bonding, so that the surface of the substrate forms a curved surface, and the quality of an epitaxial material is influenced. Ga has a lower melting point than In, does not form an alloy with GaSb, and has the advantage of easy cleaning. Although the problem of GaSb substrate softening can be completely avoided by using Ga for bonding, Ga has high reactivity at high temperature, and the molybdenum support is gradually corroded when used at the temperature of 550-600 ℃ for a long time, so that the molybdenum support material becomes brittle and the service life is reduced. In addition, the wettability of Ga is poor, so that it is difficult to uniformly coat Ga between the mo-base and the substrate, and the temperature uniformity of the substrate is difficult to ensure.
Disclosure of Invention
The invention aims to provide a method for mounting and fixing a GaSb substrate in a molecular beam epitaxy system and a sample holder used by the method, aiming at the defects that the substrate is easy to soften and the temperature uniformity of the substrate is difficult to ensure in the method for fixing the GaSb substrate in the prior art.
The purpose of the invention is realized by the following technical scheme:
a sample holder for fixing a GaSb substrate in a molecular beam epitaxy system comprises a barrel, a tantalum sheet and a pressing and fixing device, wherein the barrel and the pressing and fixing device are made of materials which are non-volatile and do not emit gas under ultrahigh vacuum, a supporting structure is arranged on the inner surface of the barrel, the tantalum sheet is arranged on the supporting structure, and the pressing and fixing device is positioned above the tantalum sheet to fix the tantalum sheet in the barrel;
the supporting structure is an annular flange, the compressing and fixing device is a clamp spring, and the clamp spring can be tightly clamped and fixed in the cylinder body;
the barrel is made of molybdenum, and the compressing and fixing device is made of tungsten;
the lower end of the supporting structure is flush with the bottom of the cylinder body;
the barrel is a cylinder, the tantalum sheet is a circular sheet, the clamp spring is a circular clamp spring, the outer diameter of the clamp spring in a natural state is larger than the inner diameter of the barrel, and the outer diameter of the clamp spring after the two ends of the clamp spring are close to each other is smaller than the inner diameter of the barrel.
A method for fixing a GaSb substrate in a molecular beam epitaxy system adopts the following method to fix the GaSb substrate on a tantalum sheet: firstly coating Ga liquid on an intermediate material, then contacting the intermediate material with a tantalum sheet in a face-to-face manner to enable the intermediate material and the tantalum sheet to move in parallel to enable the Ga liquid to be uniformly coated on the tantalum sheet, and then pasting a GaSb substrate on the tantalum sheet, wherein the intermediate material is a stable material which does not generate impurities and volatile gas in a high-temperature ultrahigh vacuum environment;
the intermediate material is silicon chip or gallium arsenide;
fixing a GaSb substrate by using a sample holder, uniformly coating Ga on a silicon wafer with the temperature higher than the melting point of Ga, and then placing a cylinder body provided with a tantalum sheet on the silicon wafer to push back and forth until the Ga is uniformly covered on the tantalum sheet;
finally, the GaSb substrate is attached to a tantalum sheet which is uniformly covered with Ga and heated to a temperature higher than the melting point of Ga, and the GaSb substrate is pushed back and forth until bubbles in the interface are completely expelled;
fixing the GaSb substrate by adopting the sample rack;
the heating temperature of the silicon chip and the tantalum chip is respectively 50 +/-5 ℃.
By adopting the sample holder, the tantalum sheet is used as an intermediate material to be in direct contact with the GaSb substrate, the tantalum is stable in property, is not easy to react with the GaSb substrate and is not easy to be corroded by Ga, the tantalum has certain ductility and moderate hardness, so that the sample holder can be prevented from reacting with the GaSb substrate or being corroded by Ga at high temperature, is not volatilized in ultrahigh vacuum, and cannot emit gas at high temperature, so that impurities cannot be brought, the tantalum sheet is positioned on a supporting structure arranged on a molybdenum cylinder, and is fixed on the supporting structure by a pressing and fixing device, so that the tantalum sheet can be prevented from moving in the using process, and the heating uniformity can be ensured. The tantalum sheet has certain hardness, can well support the substrate, cannot deform, and perfectly and skillfully solves the technical problem of the molybdenum support sample holder in the prior art.
According to the fixing device, the tantalum sheet is fixed through the clamp spring, the opening of the clamp spring is adaptive to the diameter of the inner circumferential surface of the cylinder, when the tantalum sheet is fixed, only two ends of the clamp spring need to be pulled close to enable the tantalum sheet to be radially reduced, after the tantalum sheet is placed into the cylinder, two ends of the clamp spring are opened under the action of elastic force, and the tantalum sheet is automatically fixed in the cylinder through the tensile force to achieve fixing, so that the tantalum sheet is fixed simply and easily.
The method is adopted to fix the GaSb substrate, the Ga liquid is coated on the intermediate material, and then the Ga liquid is uniformly coated on the tantalum sheet through the intermediate material, so that the difficult problems that the Ga liquid is poor in wettability and is not easy to be uniformly coated between the tantalum sheet and the GaSb substrate are solved ingeniously, the GaSb substrate is uniformly and stably adhered on the tantalum sheet, the problem of temperature uniformity of the GaSb substrate is finally solved, and a foundation is provided for realizing the growth of a high-quality Sb compound material.
Drawings
Fig. 1 is a schematic perspective view of an embodiment of a sample holder according to the present invention.
FIG. 2 is a schematic front view of the sample holder according to the embodiment of the present invention.
FIG. 3 is a schematic view of a supporting structure provided on a cylinder in the sample holder according to the present invention;
fig. 4 is a schematic view of another embodiment of a support structure disposed on a cartridge of a sample holder according to the present invention.
Description of the reference numerals
1-a cylinder body; 2-a tantalum sheet; 3-compressing the fixing device;
4-a substrate; 11-support structure
Detailed Description
The invention is further described below with reference to specific examples:
in order to solve the technical problems, intensive research is carried out on the problem of substrate softening caused by In bonding, and the Gen II type MBE system is utilized to try to fix the GaSb substrate on the molybdenum tray by adopting an In bonding and Ga bonding mode. The 580 ℃ heating experiment verifies that the In-bonded GaSb substrate has a softening phenomenon, and the front surface of the substrate forms a tiny curved surface. EDS tests show that In element exists on the growth surface of the substrate opposite to the In bonding surface, and the fact that GaSb and In form an InGaSb alloy is shown. In addition, it was found by XRD testing that the substrate material was still monocrystalline, indicating that the softening of the substrate did not result from erosion penetration by In. The melting point of InSb is 527 ℃ and that of GaSb is 712 ℃. At the high temperature of 550 ℃ and 600 ℃, the In metal on the back and GaSb are mutually dissolved to form an InGaSb alloy, wherein the higher the In content is, the lower the melting point is. Therefore, the formation of low melting point InGaSb alloys at high temperatures for In-bonded GaSb substrates is the primary reason for the softening of GaSb substrates.
Based on the research, the invention provides a sample holder, which comprises a barrel body 1, a tantalum sheet 2 and a clamp spring serving as a compression fixing device 3, wherein the barrel body is made of molybdenum, a supporting structure 11 is arranged on the inner circumferential surface of the barrel body, the tantalum sheet 2 is flatly placed on the supporting structure, the tantalum sheet is preferably vertical to the axis of the barrel body, the clamp spring is positioned above the tantalum sheet and presses the upper surface of the tantalum sheet, and the outer side of the clamp spring is in clamping connection with the inner circumferential surface of the barrel body to fix the tantalum sheet on the supporting structure. The support structure may be an annular flange as shown in figure 2 or a plurality of flanges as shown in figure 3, the flanges being intermittently distributed around the circumference of the barrel, the line joining the flanges forming an annular shape. Preferably, the lower end of the support structure is flush with the bottom of the bowl. Other elastic elements with annular openings can also be used as the pressing and fixing device of the tantalum sheet, for example, an elastic annular sheet with an opening can be used as long as the annular sheet is pressed into the cylinder and then contracted in a variable diameter way to apply elastic force outwards, and the elastic annular sheet is tightly clamped with the inner surface of the cylinder body by elasticity. In order to prevent the impurities from being introduced, the material of the pressing and fixing device is preferably a stable material such as tungsten which does not generate impurities or volatile gas. Naturally, the diameter of the clamp spring is matched with the diameter of the inner surface of the cylinder, the outer diameter of the clamp spring is larger than the inner diameter of the cylinder in a natural state, namely the outer diameter of the clamp spring is larger than the inner diameter of the cylinder in a state that two ends of the clamp spring are opened, and the inner diameter of the clamp spring is smaller than the inner diameter of the cylinder in a state that the two ends of the clamp spring. Still can adopt the clamping ring, set up the marble on the outside circumference of clamping ring, the diameter of clamping ring is less than the internal diameter of barrel, and when the marble evagination, the circumference that the marble top formed is greater than the barrel internal diameter, makes things convenient for the clamping ring to impress in the barrel. The supporting structure and the barrel body can be arranged in an integrated mode or in a split mode. Of course, the cross section of the cylinder can also adopt other shapes, such as a polygon, an ellipse and the like. In accordance with the above, the tantalum sheet may have a polygonal or elliptical shape.
The invention adopts the following method to fix the GaSb substrate:
the tantalum sheet is fixed on the supporting structure by pressing the fixing device 3, so that the tantalum sheet is stably positioned in the cylinder.
Uniformly coating Ga on a silicon wafer heated to a temperature higher than the melting point of Ga by using a Si wafer as an auxiliary coating device; or a plane made of a stable material such as gallium arsenide which does not generate impurities or volatile gases. 50 +/-5 deg.C
Then, the tantalum sheet is contacted with the surface of the silicon wafer, and the tantalum sheet and/or the silicon wafer are pushed back and forth to enable the tantalum sheet and/or the silicon wafer to generate relative parallel movement until Ga is uniformly covered on the tantalum sheet; it is preferable to heat the Si wafer to 50. + -. 5 ℃ in advance.
And then the GaSb substrate is attached to a tantalum sheet which is uniformly covered with Ga and heated to a temperature higher than the melting point of Ga, and the GaSb substrate and/or the tantalum sheet are pushed back and forth until bubbles in the interface of the GaSb substrate and the tantalum sheet are completely expelled. When pushing the GaSb substrate and/or the tantalum sheet, the care needs to be taken slowly to prevent Ga from reaching the front surface of the GaSb substrate and influencing the epitaxial growth quality. It is preferable to heat the Si wafer to 50. + -. 5 ℃ in advance.
For ease of handling, the GaSb substrate is typically mounted in the following manner. And fixing the silicon wafer in advance. Firstly, uniformly coating Ga on a silicon wafer heated to 50 +/-5 ℃;
then, placing the sample frame provided with the tantalum sheet on the silicon wafer to enable the tantalum sheet to face the silicon wafer, and pushing the sample frame back and forth until Ga is uniformly covered on the tantalum sheet;
and finally, attaching the GaSb substrate to a tantalum sheet which is uniformly covered with Ga and heated to 50 +/-5 ℃, and pushing the GaSb substrate back and forth until bubbles in an interface between the GaSb substrate and the tantalum sheet are completely expelled, wherein the Ga liquid basically covers the tantalum sheet when seen from the side surface. The GaSb is pushed slowly and carefully to prevent Ga from reaching the front surface of the GaSb substrate and influencing the epitaxial growth quality.
Claims (10)
1. The sample holder is characterized by comprising a barrel body (1), a tantalum sheet (2) and a pressing and fixing device (3), wherein the barrel body and the pressing and fixing device are made of materials which are not volatile under ultrahigh vacuum and do not emit gas, a supporting structure is arranged on the inner surface of the barrel body, the tantalum sheet is arranged on the supporting structure, and the pressing and fixing device is positioned above the tantalum sheet to fix the tantalum sheet in the barrel body.
2. The sample holder for holding a GaSb substrate in a molecular beam epitaxy system according to claim 1, wherein the support structure is an annular flange, and the clamping fixture is a clamp spring which can be clamped and fixed in the barrel.
3. The sample holder for holding a GaSb substrate in a molecular beam epitaxy system according to claim 1, wherein the barrel is made of molybdenum and the compressing and fixing device is made of tungsten.
4. The sample holder for holding a GaSb substrate in a molecular beam epitaxy system according to claim 1, wherein the lower end of the support structure is flush with the bottom of the barrel.
5. The sample holder for fixing the GaSb substrate in the molecular beam epitaxy system according to claim 1, wherein the barrel is a cylinder, the tantalum sheet is a circular sheet, the clamp spring is a circular clamp spring, an outer diameter of the clamp spring in a natural state is larger than an inner diameter of the barrel, and an outer diameter of the clamp spring after the clamp spring is closed to both ends is smaller than the inner diameter of the barrel.
6. A method for fixing a GaSb substrate in a molecular beam epitaxy system is characterized in that the GaSb substrate is fixed on a tantalum sheet by adopting the following method: the method comprises the steps of firstly coating Ga liquid on an intermediate material, then contacting the intermediate material with a tantalum sheet in a face-to-face mode to enable the intermediate material and the tantalum sheet to move in parallel, enabling the Ga liquid to be uniformly coated on the tantalum sheet, and then pasting a GaSb substrate on the tantalum sheet, wherein the intermediate material is a stable material which does not generate impurities or volatile gas in a high-temperature ultrahigh vacuum environment.
7. The method for immobilizing a GaSb substrate in a molecular beam epitaxy system according to claim 6, wherein the intermediate material is silicon wafer or gallium arsenide.
8. The method of claim 6, wherein the GaSb substrate is fixed by a sample holder, Ga is uniformly coated on a silicon wafer with a temperature higher than the melting point of Ga, and then a cylinder provided with a tantalum wafer is placed on the silicon wafer and pushed back and forth until Ga is uniformly covered on the tantalum wafer;
and finally, attaching the GaSb substrate to a tantalum sheet which is uniformly covered with Ga and heated to a temperature higher than the melting point of Ga, and pushing the GaSb substrate back and forth until bubbles in the interface are completely expelled.
9. The method for fixing a GaSb substrate in a molecular beam epitaxy system according to claim 6, wherein the GaSb substrate is fixed using a sample holder according to any one of claims 1 to 5.
10. The method for fixing a GaSb substrate in a molecular beam epitaxy system according to claim 8, wherein the heating temperatures of the silicon wafer and the tantalum wafer are 50 ± 5 degrees C, respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011589006.9A CN112593285A (en) | 2020-12-29 | 2020-12-29 | Method for fixing GaSb substrate in molecular beam epitaxy system and sample holder |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011589006.9A CN112593285A (en) | 2020-12-29 | 2020-12-29 | Method for fixing GaSb substrate in molecular beam epitaxy system and sample holder |
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| CN112593285A true CN112593285A (en) | 2021-04-02 |
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| CN202011589006.9A Pending CN112593285A (en) | 2020-12-29 | 2020-12-29 | Method for fixing GaSb substrate in molecular beam epitaxy system and sample holder |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113928872A (en) * | 2021-09-27 | 2022-01-14 | 中国电子科技集团公司第十一研究所 | Material slag collecting device for molecular beam epitaxy equipment |
| CN114112641A (en) * | 2021-12-21 | 2022-03-01 | 新兴河北工程技术有限公司 | Metal pipe erosion corrosion test device and use method |
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| CN101207022A (en) * | 2006-12-21 | 2008-06-25 | 中国科学院半导体研究所 | Method for epitaxial generation of gallium antimonide on gallium arsenide substrate |
| CN105019027A (en) * | 2014-04-23 | 2015-11-04 | 长春理工大学 | Method for preparing GaSb nanowire on GaSb substrate without catalysis by use of molecular beam epitaxy (MBE) |
| CN105420675A (en) * | 2015-12-30 | 2016-03-23 | 山东大学 | Device for reducing baking temperature rise influence on substrate in evaporation coating equipment or material on substrate and application |
| CN211402241U (en) * | 2019-12-10 | 2020-09-01 | 中国电子科技集团公司第四十六研究所 | Sample frame for secondary ion mass spectrometer test |
| CN214142609U (en) * | 2020-12-29 | 2021-09-07 | 苏州焜原光电有限公司 | Sample rack for installing and fixing GaSb substrate in molecular beam epitaxy system |
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2020
- 2020-12-29 CN CN202011589006.9A patent/CN112593285A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101207022A (en) * | 2006-12-21 | 2008-06-25 | 中国科学院半导体研究所 | Method for epitaxial generation of gallium antimonide on gallium arsenide substrate |
| CN105019027A (en) * | 2014-04-23 | 2015-11-04 | 长春理工大学 | Method for preparing GaSb nanowire on GaSb substrate without catalysis by use of molecular beam epitaxy (MBE) |
| CN105420675A (en) * | 2015-12-30 | 2016-03-23 | 山东大学 | Device for reducing baking temperature rise influence on substrate in evaporation coating equipment or material on substrate and application |
| CN211402241U (en) * | 2019-12-10 | 2020-09-01 | 中国电子科技集团公司第四十六研究所 | Sample frame for secondary ion mass spectrometer test |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113928872A (en) * | 2021-09-27 | 2022-01-14 | 中国电子科技集团公司第十一研究所 | Material slag collecting device for molecular beam epitaxy equipment |
| CN114112641A (en) * | 2021-12-21 | 2022-03-01 | 新兴河北工程技术有限公司 | Metal pipe erosion corrosion test device and use method |
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