CN206368218U - Gaas wafer deoxygenation pallet - Google Patents
Gaas wafer deoxygenation pallet Download PDFInfo
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- CN206368218U CN206368218U CN201621336680.5U CN201621336680U CN206368218U CN 206368218 U CN206368218 U CN 206368218U CN 201621336680 U CN201621336680 U CN 201621336680U CN 206368218 U CN206368218 U CN 206368218U
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- gaas wafer
- deoxygenation
- mounting hole
- pallet
- annular slab
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Abstract
The utility model is related to a kind of gaas wafer deoxygenation pallet.The gaas wafer includes base and positioning component with deoxygenation pallet；Base offers insertion base and the mounting hole for installing gaas wafer, and the side wall of mounting hole is provided with spacing preiection；Positioning component can be fixedly connected with base, and the edge on two relative surfaces that positioning component and spacing preiection can respectively with gaas wafer abuts against and grips gaas wafer.Above-mentioned gaas wafer deoxygenation pallet can simplify the operation of the deoxyprocess of gaas wafer, improves oxygen removal efficiency and more can firmly fix gaas wafer.
Description
Technical field
The utility model is related to semiconductor light electro-technical field, more particularly to a kind of gaas wafer deoxygenation pallet.
Background technology
It is the overwhelming majority half in semiconductor monocrystal wafer Epitaxial growth high quality single crystal semiconductive thin film or hetero-junctions
The core technology link of conductor photoelectric device research and development.GaAs (GaAs) wafer is used as a kind of higher semiconductor of lattice match
Wafer, is often used as high-quality II-VI group, the epitaxial growth substrate of Group III-V semiconductor photoelectric device.
Molecular beam epitaxy technique is one kind in ultra-high vacuum environment (P<1×10-8Pa in), in the semiconductor crystal wafer of monocrystalline
The technological means of Epitaxial growth high-quality semiconductor film.High-quality semiconductor photoelectric device has been widely used in it at present
And the preparation and processing of high mobility semiconductor transistor.In molecular beam epitaxial growth technique, GaAs wafers are first fixed
Onto a sample carrier, it is placed into together with sample carrier on a heatable platform；Add on heating platform by high temperature
After heat treatment, the oxide layer of GaAs crystal column surfaces comes off, and exposes the single-crystal surface of atomically flating；Then, high-purity member is passed through
Plain evaporation source provides atom or molecular beam to GaAs crystal column surfaces, and then, carry out high-quality semiconductor on GaAs surfaces
The deposition of film and epitaxial growth.
In whole epitaxial growth technology, the monocrystalline GaAs surfaces with atomic-level flatness be further carry out it is high-quality
The primary condition of semiconductive thin film epitaxial growth, therefore, the effective oxide layer for removing GaAs surfaces for whole set process be to
Important technological process is closed, current deoxidation technique is usually：First, GaAs wafers are fixed on to discoid molybdenum sample
In support, fixed method typically uses Ga metal coatings and GaAs and molybdenum (Mo) sample carrier bonds together, and forms GaAs/
Ga/Mo structure；Then, by the growth room of the incoming molecular beam epitaxy of molybdenum sample carrier can heating platform, pass through the back side
Hot water radiation wire stone or metal plate for standing a stove on as a precaution against fire is heated to the back side of sample carrier, and sample carrier can be transferred heat to effectively by Ga metal coatings
GaAs wafers, when GaAs wafer surface temperatures reach deoxygenation temperature, GaAs wafer surface oxidation layers will slowly be steamed
Send out and remove, and then expose the crystal column surface of monocrystalline.
In oxygen removal process, Ga metal coatings serve two important function：(1) under the high temperature conditions, molten condition
Ga coatings can be firmly adsorbed GaAs wafers on molybdenum sample carrier surface, so as to be reached during deoxidation using its surface tension
The purpose of fixed sample；(2) Ga coatings have good heat conductivility, effectively can give the heat transfer of molybdenum sample carrier
GaAs wafers so that GaAs wafer surface temperatures are uniformly raised, are finally reached the purpose of the uniform oxide layer for removing crystal column surface.
Therefore, in whole set process, it is vital that uniform Ga coatings deoxygenate process to the surface of wafer.
, then, will in order to realize the preparation of uniform Ga coatings, it usually needs Mo sample carriers first are heated to about into 100 DEG C
Ga metallic particles is melted on sample carrier surface, then GaAs wafers are placed on above Ga coatings, is rotated repeatedly on sample carrier
GaAs wafers are multiple, so that it is guaranteed that GaAs wafers hold tightly together with Ga metal coatings.Average processing every time is operated above
More than half an hour is taken, technique is cumbersome, and it is uneven also easily between GaAs and Mo sample carriers to occur some
Air pockets, and once there is cavity, the GaAs crystal column surfaces corresponding to it just become low-temperature region, and ultimately resulting in it can not
Deoxidation, so as to become the failure area of photoelectric device, causes the waste of wafer, less efficient.And due to the deoxidation temperature of GaAs wafers
Degree condition is more harsh, if higher than deoxidation temperature range, whole wafer can be caused to overheat, so as to destroy the atom level of crystal column surface
Flat surface, it is thus impossible to the deoxidation of the empty corresponding low-temperature region of Ga metal coatings is realized by improving deoxidation temperature,
Otherwise the failure of full wafer crystal column surface can be caused, the waste of wafer is still resulted in.Meanwhile, carried out to sample carrier at high warm
During reason, if heating-up temperature is too high, Ga metal coatings can be caused to evaporate and cause GaAs wafers to be taken off from molybdenum sample carrier
Fall, influence follow-up epitaxial growth.
Utility model content
Based on this, it is necessary to provide a kind of operation for the deoxyprocess that can simplify gaas wafer, improve oxygen removal efficiency
And more can firmly fix the gaas wafer deoxygenation pallet of gaas wafer.
A kind of gaas wafer deoxygenation pallet, including：
Base, offers base described in insertion and the mounting hole for installing the gaas wafer, the mounting hole
Side wall is provided with spacing preiection；
Positioning component, can be fixedly connected with the base, and the positioning component can be distinguished with the spacing preiection
The edge on two surfaces relative with the gaas wafer abuts against and grips the gaas wafer.
Insertion base and the mounting hole for installing gaas wafer are offered on the base of above-mentioned gaas wafer, is installed
The side wall in hole is provided with spacing preiection, and positioning component can be fixedly connected with base, and positioning component can be distinguished with spacing preiection
The edge on two surfaces relative with gaas wafer abuts against and grips gaas wafer so that when the above-mentioned arsenic of use
When change gallium wafer fixes gaas wafer with deoxygenation pallet, gaas wafer need to be only installed in mounting hole, then group will be positioned
Part is fixedly connected with base, so that gaas wafer is clamped between spacing preiection and positioning component, operates very simple；
And because gaas wafer is mounted in mounting hole, and spacing preiection and positioning component are realized by clamping the edge of wafer
The fixation of wafer so that relative two surface of gaas wafer can be directly exposed under heat radiation as much as possible, and nothing
Ga metal coatings need to be used to conduct heat and base and gaas wafer is adhesively fixed, Ga metal coatings are used so as to avoid
Caused air pockets problem and Ga metal coatings evaporate and cause the problem of GaAs wafers come off from sample carrier, therefore, on
State gaas wafer deoxygenation pallet can simplify gaas wafer deoxyprocess operation, improve oxygen removal efficiency and can be compared with
Firmly to fix gaas wafer.
In one of the embodiments, the positioning component includes annular slab and threaded fastener, the threaded fastener
It can be arranged in after the annular slab and be fixedly connected with the base, and the annular slab is fixedly connected with the base, its
In, the annular slab can be abutted against with the edge of the gaas wafer, and coordinate clamping solid jointly with the spacing preiection
The fixed gaas wafer.
In one of the embodiments, multiple inner rings along the annular slab are offered on the annular slab spaced
Breach.
In one of the embodiments, when the annular slab is fixed on the base, the annular slab and the peace
The coaxial setting in hole is filled, the internal diameter of the annular slab is less than the diameter of the mounting hole, and the internal diameter of the annular slab and the peace
The diameter difference for filling hole is no more than 2 millimeters.
In one of the embodiments, the thickness of the annular slab is 0.1 millimeter~2 millimeters.
In one of the embodiments, the annular slab is molybdenum plate or tantalum plate.
In one of the embodiments, in addition to transparent limiting plate, the limiting plate can be contained in the mounting hole
It is interior, and can be abutted against with the spacing preiection, the limiting plate can be jointly cooperatively formed with the base for installing institute
The storage tank of gaas wafer is stated, when the limiting plate is contained in the mounting hole, the limiting plate and the positioning group
Part coordinates jointly grips the gaas wafer.
In one of the embodiments, the limiting plate is alumina plate or carborundum plate.
In one of the embodiments, the thickness of the limiting plate is 300 microns~800 microns.
In one of the embodiments, the mounting hole is circle, and the spacing preiection is opened along one of the mounting hole
Mouth is set one week, and setting coaxial with the mounting hole, and the inner ring of the spacing preiection is differed not with the radius of the mounting hole
More than 1 millimeter.
Brief description of the drawings
Fig. 1 is provided with the axial section of gaas wafer for the gaas wafer of an embodiment with deoxygenation pallet；
Fig. 2 is the three-dimensional exploded view of the gaas wafer deoxygenation pallet shown in Fig. 1；
Fig. 3 is the structural representation of another angle of the base of the gaas wafer deoxygenation pallet shown in Fig. 2；
Fig. 4 is the structural representation that the gaas wafer shown in Fig. 2 is fitted together with deoxygenation basetray and positioning component
Figure；
Fig. 5 is the structural representation of the annular slab of the positioning component of the gaas wafer deoxygenation pallet shown in Fig. 2.
Embodiment
For the ease of understanding the utility model, the utility model is more fully retouched below with reference to relevant drawings
State.Preferred embodiment of the present utility model is given in accompanying drawing.But, the utility model can come in many different forms
Realize, however it is not limited to embodiment described herein.On the contrary, the purpose for providing these embodiments is made to of the present utility model
The understanding of disclosure is more thorough comprehensive.
It should be noted that when element is referred to as " being fixed on " another element, it can be directly on another element
Or can also have element placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.Term as used herein " vertical ", " level ", " left side ",
" right side " and similar statement are for illustrative purposes only.
Unless otherwise defined, all of technologies and scientific terms used here by the article is led with belonging to technology of the present utility model
The implication that the technical staff in domain is generally understood that is identical.It is herein to be in term used in the description of the present utility model
The purpose of description specific embodiment, it is not intended that in limitation the utility model.
As shown in figure 1, the gaas wafer of embodiment deoxygenation pallet 10, can be on the surface of gaas wafer 20
Oxide layer removal technique in be used for fix gaas wafer 20.The gaas wafer includes base 100 with deoxygenation pallet 10
With positioning component 200.
Also referring to Fig. 2 and Fig. 3, insertion base 100 is offered on base 100 and for installing gaas wafer 20
Mounting hole 110, the side wall of mounting hole 110 is provided with spacing preiection 120.Specifically, base 100 is ringlike round plate, base 100
Inner ring is that mounting hole 110, i.e. mounting hole 110 are circular hole.It is appreciated that in other embodiments, mounting hole 110 be also not necessarily limited to for
Circular hole, mounting hole 110 can also be square, hexagon etc..
Wherein, the fusing point of base 100 is more than 1000 DEG C, to ensure base 100 in the deoxyprocess of gaas wafer 20
High-temperature process will not melt.Specifically, base 100 is molybdenum base or stainless steel base.
Further, spacing preiection 120 is to be set one week along an opening of mounting hole 110, and coaxial with mounting hole 110
Set, the radius of the inner ring of spacing preiection 120 is differed with the radius of mounting hole 110 no more than 1 millimeter, to prevent limit as much as possible
The surfaces of the raised 120 pairs of gaas wafers 20 in position is blocked, so that gaas wafer 20 can be as much as possible in heating process
In heat radiation.
It is appreciated that spacing preiection 120 is also not necessarily limited to set the structure of one week for an opening along mounting hole 110,
In other embodiments, spacing preiection 120 is bulk, now, and spacing preiection 120 is multiple one along mounting hole 110 to be multiple
Open space is set one week.
Positioning component 200 can be fixedly connected with base 100, positioning component 200 and spacing preiection 120 can respectively with arsenic
The edge for changing relative two surface of gallium wafer 20 abuts against and grips gaas wafer 20.Wherein, positioning component 200
Fusing point more than 1000 DEG C.
Also referring to Fig. 4, specifically, positioning component 200 includes annular slab 210 and threaded fastener 220, screw threads for fastening
Part 220 can be arranged in after annular slab 210 to be fixedly connected with base 100, and annular slab 210 is fixedly connected with base 100, its
In, annular slab 210 can be abutted against with the edge of gaas wafer 20, and cooperation grips arsenic jointly with spacing preiection 120
Change gallium wafer 20.
Wherein, the fusing point of annular slab 210 is more than 1000 DEG C.Specifically, annular slab 210 is molybdenum plate or tantalum plate.
Please refer to fig. 5, it is further, multiple inner rings along annular slab 210 are offered on annular slab 210 and are arranged at intervals
Breach 212, certain space can be provided to deformation of the wafer 20 in heating process, prevent wafer 20 in heating process
Deformation and cause annular slab 210 to deform upon so that annular slab 210 can be reused.Specifically in the illustrated embodiment,
Breach 212 is 5.
Further, the thickness of annular slab 210 is 0.1 millimeter~2 millimeters, so as to will not be deformed in guarantee annular slab 210
On the premise of, make annular slab 210 as thin as possible.
Further, when annular slab 210 is fixed on base 100, annular slab 210 is coaxial with mounting hole 10 to be set, ring
The internal diameter of shape plate 210 is less than the diameter of mounting hole 110, and the internal diameter of annular slab 210 is differed with the diameter of mounting hole 110 and is no more than
2 millimeters, to prevent the blocking to the surface of gaas wafer 20 of annular slab 210 as much as possible, so that gaas wafer 20 is adding
It can be exposed to as much as possible in heat radiation in thermal process.
Wherein, the fusing point of threaded fastener 220 is more than 1000 DEG C.Specifically, threaded fastener 220 be molybdenum screw or
Tantalum screw.Specifically, threaded fastener 220 is multiple, periphery of multiple threaded fasteners 220 along mounting hole 110 is arranged at intervals.
Specifically in the illustrated embodiment, threaded fastener 220 is 6, it will be understood that in other embodiments, threaded fastener 220
Can also be for 2,3,5 or more than 6.
It is appreciated that positioning component 200 is also not necessarily limited to as said structure, in other embodiments, positioning component 200 may be used also
It is now, spacing with the gag lever post that sets and can be rotatably mounted on base 100 including multiple peripheries along mounting hole 110
Bar and spacing preiection 120 abut against with the edge on two relative surfaces of gaas wafer 20 and clamp gaas wafer respectively
20.However, it is spacing by the form of annular slab 210, gaas wafer 20 can be made regularly more to consolidate, therefore, in this reality
Apply in example, positioning component 200 uses the form of annular slab 210.
Please refer to Fig. 1 and Fig. 2 in the lump again, further, gaas wafer also includes transparent limit with deoxygenation pallet 10
Position plate 300, limiting plate 300 can be contained in mounting hole 110, and can be abutted against with spacing preiection 120, the energy of limiting plate 300
Enough and base 100 cooperatively forms the storage tank for installing gaas wafer 20 jointly, when limiting plate 300 is contained in mounting hole
When in 110, the annular slab 210 of limiting plate 300 and positioning component 200 coordinates jointly grips gaas wafer 20.Specifically,
Limiting plate 300 is circular slab；Gaas wafer 20, limiting plate 300, annular slab 210 and the coaxial setting of mounting hole 110.
Wherein, the fusing point of limiting plate 300 is more than 1000 DEG C.Specifically, limiting plate 300 is alumina plate or carborundum
Plate；It is preferred that, limiting plate 300 is alumina plate, relative to carborundum plate, and the price of alumina plate inexpensively, is conducive to drop
Low production cost.
Further, the thickness of limiting plate 300 is 300 microns~800 microns, and the limiting plate 300 in the thickness range can
On the premise of translucency is ensured, to give gaas wafer 20 good mechanical support.Further, limiting plate 300
Thickness is 400 microns~500 microns.
Further, when limiting plate 300 is contained in mounting hole 110, limiting plate 300 away from spacing preiection 120 one
The minimum range that face is provided with the one side of annular slab 210 to base 100 is more than or equal to the thickness of gaas wafer 20, so as to work as
When gaas wafer 20 is clamped between spacing preiection 120 and limiting plate 300, gaas wafer 20 is away from spacing preiection 120
Simultaneously concordant with base 100 or slightly higher than base 100.
Above-mentioned gaas wafer is at least had the advantage that with deoxygenation pallet 10：
(1) mounting hole 110 for installing gaas wafer 20 is offered on the base 100 of above-mentioned gaas wafer 20,
The side wall of mounting hole 110 is provided with spacing preiection 120, and positioning component 200 can be fixedly connected with base 100, positioning component 200
The edge on two relative surfaces that can respectively with gaas wafer 20 with spacing preiection 120 abuts against and grips arsenic
Gallium wafer 20 so that, only need to be by GaAs when fixing gaas wafer 20 with deoxygenation pallet 10 using above-mentioned gaas wafer
Wafer 20 is installed in mounting hole 110, then positioning component 200 is fixedly connected with base 100, so that gaas wafer 20 is clamped
Between spacing preiection 120 and positioning component 200, very simple is operated；And because gaas wafer 20 is mounted in peace
Fill in hole 110, and spacing preiection 120 and positioning component 200 realize the fixation of wafer 20 by clamping the edge of wafer 20, make
Obtaining relative two surface of gaas wafer 20 can be exposed under heat radiation as much as possible, without using Ga metal coatings
To conduct heat and base 100 and gaas wafer 20 is adhesively fixed, so as to avoid using air caused by Ga metal coatings
Empty problem and Ga metal coatings evaporate and cause the problem of GaAs wafers 20 come off from sample carrier, therefore, above-mentioned GaAs
Wafer deoxygenation pallet 10 can simplify the operation of the deoxyprocess of gaas wafer 20, improve oxygen removal efficiency and can be more steady
Admittedly fixed gaas wafer 20.
Simultaneously because gaas wafer 20 is mounted in mounting hole 110, and fusing point is spacing more than 1000 DEG C
Projection 120 and positioning component 200 realize the fixation of wafer 20 by clamping the edge of wafer 20 so that the phase of gaas wafer 20
To two surfaces can as much as possible be exposed to heat radiation under, can greatly reduce gaas wafer oxide layer plus
Hot temperature, so that the temperature of the oxide layer of gaas wafer 20 reduces whole 200 DEG C, reduces deoxidation energy consumption.
(2) the transparent limiting plate 300 in mounting hole 110 can be contained in by setting, limiting plate 300 can with it is spacing
Projection 120 is abutted against, and limiting plate 300 can be jointly cooperatively formed with base 100 for installing the accommodating of gaas wafer 20
Groove, so that gaas wafer 20 can be clamped between limiting plate 300 and positioning component 200, so that gaas wafer 20
It can be clamped between limiting plate 300 and positioning component 200, so as to reach support gaas wafer 20 and diathermanous printing opacity
Effect, the use of limiting plate 300 can also be prevented effectively from gaas wafer 20 to be occurred due to expanding with heat and contract with cold during deoxidation
Caused fragmentation accident, and set limiting plate 300 to carry irregular wafer in the case where coordinating tabletting, enter
The deoxidation and epitaxial growth of the wafer of row small size.And because limiting plate 300 is transparent, the radiations heat energy energy that thermal source is produced
Enough completely through limiting plate 300, influence is produced without the heat radiation processing on wafer 20.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses several embodiments of the present utility model, and it describes more specific and detailed,
But therefore it can not be interpreted as the limitation to utility model patent scope.It should be pointed out that for the common skill of this area
For art personnel, without departing from the concept of the premise utility, various modifications and improvements can be made, these are belonged to
Protection domain of the present utility model.Therefore, the protection domain of the utility model patent should be determined by the appended claims.
Claims (10)
1. a kind of gaas wafer deoxygenation pallet, it is characterised in that including：
Base, offers base described in insertion and the mounting hole for installing the gaas wafer, the side wall of the mounting hole
It is provided with spacing preiection；
Positioning component, can be fixedly connected with the base, and the positioning component and the spacing preiection can respectively with institute
The edge for stating relative two surface of gaas wafer abuts against and grips the gaas wafer.
2. gaas wafer according to claim 1 deoxygenation pallet, it is characterised in that the positioning component includes annular
Plate and threaded fastener, the threaded fastener can be arranged in after the annular slab to be fixedly connected with the base, and by institute
Annular slab is stated to be fixedly connected with the base, wherein, the annular slab can be abutted against with the edge of the gaas wafer, and
Coordinate jointly with the spacing preiection and grip the gaas wafer.
3. gaas wafer according to claim 2 deoxygenation pallet, it is characterised in that offered on the annular slab many
The spaced breach of the individual inner ring along the annular slab.
4. gaas wafer according to claim 2 deoxygenation pallet, it is characterised in that when the annular slab is fixed on institute
When stating on base, the annular slab is coaxial with the mounting hole to be set, and the internal diameter of the annular slab is less than the straight of the mounting hole
Footpath, and the internal diameter of the annular slab differs with the diameter of the mounting hole no more than 2 millimeters.
5. gaas wafer according to claim 2 deoxygenation pallet, it is characterised in that the thickness of the annular slab is
0.1 millimeter~2 millimeters.
6. gaas wafer according to claim 2 deoxygenation pallet, it is characterised in that the annular slab is molybdenum plate or tantalum
Plate.
7. gaas wafer according to claim 1 deoxygenation pallet, it is characterised in that also including transparent limiting plate,
The limiting plate can be contained in the mounting hole, and can be abutted against with the spacing preiection, and the limiting plate can be with
The base cooperatively forms the storage tank for installing the gaas wafer jointly, when the limiting plate is contained in the installation
When in hole, cooperation grips the gaas wafer jointly for the limiting plate and the positioning component.
8. gaas wafer according to claim 7 deoxygenation pallet, it is characterised in that the limiting plate is alumina plate
Or carborundum plate.
9. gaas wafer according to claim 7 deoxygenation pallet, it is characterised in that the thickness of the limiting plate is
300 microns~800 microns.
10. gaas wafer according to claim 1 deoxygenation pallet, it is characterised in that the mounting hole is circle, institute
Spacing preiection is stated to set one week along an opening of the mounting hole, and setting coaxial with the mounting hole, the spacing preiection
The radius of inner ring differed with the radius of the mounting hole no more than 1 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621336680.5U CN206368218U (en) | 2016-12-07 | 2016-12-07 | Gaas wafer deoxygenation pallet |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621336680.5U CN206368218U (en) | 2016-12-07 | 2016-12-07 | Gaas wafer deoxygenation pallet |
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| Publication Number | Publication Date |
|---|---|
| CN206368218U true CN206368218U (en) | 2017-08-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201621336680.5U Active CN206368218U (en) | 2016-12-07 | 2016-12-07 | Gaas wafer deoxygenation pallet |
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| CN (1) | CN206368218U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110797275A (en) * | 2019-10-30 | 2020-02-14 | 西安奕斯伟硅片技术有限公司 | Wafer detection tool |
| CN112276562A (en) * | 2019-07-25 | 2021-01-29 | 贝特霍尔德·赫姆勒机器制造股份公司 | Workpiece tray and processing system |
-
2016
- 2016-12-07 CN CN201621336680.5U patent/CN206368218U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112276562A (en) * | 2019-07-25 | 2021-01-29 | 贝特霍尔德·赫姆勒机器制造股份公司 | Workpiece tray and processing system |
| CN110797275A (en) * | 2019-10-30 | 2020-02-14 | 西安奕斯伟硅片技术有限公司 | Wafer detection tool |
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