CN112592719B - Corrosive liquid and corrosion method for corroding cadmium telluride CdTe thin film on mercury cadmium telluride surface - Google Patents
Corrosive liquid and corrosion method for corroding cadmium telluride CdTe thin film on mercury cadmium telluride surface Download PDFInfo
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- CN112592719B CN112592719B CN202010770895.2A CN202010770895A CN112592719B CN 112592719 B CN112592719 B CN 112592719B CN 202010770895 A CN202010770895 A CN 202010770895A CN 112592719 B CN112592719 B CN 112592719B
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- cadmium telluride
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 238000005260 corrosion Methods 0.000 title claims abstract description 27
- 230000007797 corrosion Effects 0.000 title claims abstract description 27
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 title claims abstract description 26
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 239000007788 liquid Substances 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title claims abstract description 16
- 229910004613 CdTe Inorganic materials 0.000 title claims abstract 12
- 239000010409 thin film Substances 0.000 title claims description 13
- FVAUCKIRQBBSSJ-UHFFFAOYSA-M sodium iodide Chemical compound [Na+].[I-] FVAUCKIRQBBSSJ-UHFFFAOYSA-M 0.000 claims abstract description 46
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims abstract description 16
- 235000009518 sodium iodide Nutrition 0.000 claims abstract description 15
- 239000002904 solvent Substances 0.000 claims abstract description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 15
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 13
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 229910052740 iodine Inorganic materials 0.000 claims description 5
- 239000011630 iodine Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000003670 easy-to-clean Effects 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 abstract 1
- 238000001514 detection method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 238000007726 management method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
The invention discloses a corrosive liquid and a corrosion method for corroding a cadmium telluride CdTe film on a mercury cadmium telluride surface. The corrosive liquid for corroding the cadmium telluride CdTe film on the mercury cadmium telluride surface comprises: water H2O as solvent, and solutes dissolved in the H2O, including sodium iodide NaI and hydrogen chloride HCl. By adopting the invention, the corrosive liquid can chemically react with CdTe at normal temperature to realize normal-temperature corrosion of the CdTe film on the mercury cadmium telluride surface, the whole reaction process has slow speed and no heating, can realize accurate control of the corrosion degree, has simple configuration and cheap and easily obtained components, greatly reduces the corrosion cost, and is easy to clean after corrosion.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a corrosive liquid and a corrosion method for corroding a cadmium telluride (CdTe) film on a mercury cadmium telluride surface.
Background
The infrared focal plane detection technology has the remarkable advantages of wide spectral response wave band, capability of obtaining more ground target information, capability of working day and night and the like, and is widely applied to the fields of agriculture and animal husbandry, investigation, development and management of forest resources, meteorological forecast, geothermal distribution, earthquake, volcanic activity, space astronomical detection and the like.
The infrared detector of mercury cadmium telluride is one of the products of infrared detection technology, and during the preparation process of the detector, firstly a layer of CdTe film is grown on the surface of mercury cadmium telluride material to isolate the mercury cadmium telluride material from the external environment and to play an insulating role, and then the CdTe film layer on the surface of the mercury cadmium telluride material is removed by wet etching at a specific position according to the requirements of the subsequent process. However, in the actual operation process, the wet etching process for the CdTe film layer generally has the problems of too high etching rate, ice bath, large amount of gas generation, influence on etching uniformity and the like.
Disclosure of Invention
The embodiment of the invention provides a corrosive liquid and a corrosion method for corroding a CdTe thin film on a mercury cadmium telluride surface, which are used for solving the problem of poor uniformity of CdTe corrosion by wet corrosion in the prior art.
The corrosive liquid for corroding the cadmium telluride CdTe film on the mercury cadmium telluride surface comprises: water H as solvent2O and is soluble in the H2A solute of O, the solute comprising iodinationSodium NaI and hydrogen chloride HCl.
In accordance with some embodiments of the present invention,
the content of NaI is more than or equal to 1 g and less than or equal to 5 g;
the content of HCl is more than or equal to 0.1 ml and less than or equal to 2 ml;
Said H2The content of O is 50 ml or more and 100 ml or less.
In accordance with some embodiments of the present invention,
the NaI content is 2 g;
the content of HCl is 1 ml;
said H2The O content was 70 ml.
In accordance with some embodiments of the present invention,
the solute further comprises: iodine solute I2。
In accordance with some embodiments of the present invention,
said I2The content of (A) is not less than 1 g and not more than 10 g.
In accordance with some embodiments of the present invention,
said I2The content of (B) is 2 g.
The corrosion method of the cadmium telluride CdTe thin film on the mercury cadmium telluride surface comprises the following steps:
preparing a corrosive liquid, wherein the corrosive liquid is used for corroding the cadmium telluride CdTe thin film on the mercury cadmium telluride surface;
and placing the mercury cadmium telluride with the CdTe film on the surface in the corrosive liquid, standing for a preset time period, and taking out.
By adopting the embodiment of the invention, the corrosive liquid can chemically react with CdTe at normal temperature to realize normal-temperature corrosion of the CdTe film on the mercury cadmium telluride surface, the whole reaction process has low speed and no heating, can realize accurate control of the corrosion degree, has simple configuration and cheap components, is easy to obtain, greatly reduces the corrosion cost, and is easy to clean after corrosion.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Detailed Description
Exemplary embodiments of the present invention will be described in more detail below. While exemplary embodiments of the invention have been described, it should be understood that the invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
First embodiment
The corrosive liquid for corroding the cadmium telluride CdTe film on the mercury cadmium telluride surface comprises the following components: water H as solvent2O and dissolved in H2O, and the solute comprises sodium iodide, NaI, and hydrogen chloride, HCl.
By adopting the embodiment of the invention, the corrosive liquid can chemically react with CdTe at normal temperature to realize normal-temperature corrosion of the CdTe film on the mercury cadmium telluride surface, the whole reaction process has low speed and no heating, can realize accurate control of the corrosion degree, has simple configuration and cheap components, is easy to obtain, greatly reduces the corrosion cost, and is easy to clean after corrosion.
Second embodiment
The corrosive liquid for corroding the cadmium telluride CdTe film on the mercury cadmium telluride surface comprises: water H as solvent2O, and dissolved in H2O, and the solute comprises sodium iodide (NaI) and hydrogen chloride (HCl). Wherein the content of NaI is more than or equal to 1 g and less than or equal to 5 g; the content of HCl is more than or equal to 0.1 ml and less than or equal to 2 ml; h2The content of O is 50 ml or more and 100 ml or less.
Third embodiment
The corrosive liquid for corroding the cadmium telluride CdTe film on the mercury cadmium telluride surface comprises the following components: water H as solvent2O and dissolved in H2O, and the solute comprises sodium iodide, NaI, and hydrogen chloride, HCl. Wherein, the content of NaI is 2 g; the HCl content was 1 ml; h2The O content was 70 ml.
Fourth embodiment
Unlike the third embodiment, in the present embodiment, the solute further includes: iodine solute I2。
Fifth embodiment
Unlike the third embodiment, in the present embodiment, the solute further includes: iodine solute I2。I2The content of (A) is not less than 1 g and not more than 10 g.
Sixth embodiment
Unlike the third embodiment, in the present embodiment, the solute further includes: iodine solute I2。I2The content of (B) is 2 g.
The corrosion method of the cadmium telluride CdTe thin film on the mercury cadmium telluride surface comprises the following steps:
preparing a corrosive liquid, wherein the corrosive liquid is used for corroding the cadmium telluride CdTe thin film on the surface of the mercury cadmium telluride;
placing the tellurium-cadmium-mercury with the CdTe film on the surface in the corrosive liquid, standing for a preset time period, and taking out.
CdTe can react with the corrosive liquid chemically, and the reaction formula is as follows:
the chemical reaction is carried out in an acidic environment, wherein HCl is used to provide an acidic environment for the reaction.
The corrosion rate can be adjusted by adjusting the concentration of the corrosive liquid and the content of HCl.
It is to be understood that while embodiments of the invention have been shown and described, those skilled in the art will understand that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (6)
1. A corrosion method of a cadmium telluride CdTe thin film on a mercury cadmium telluride surface is characterized by comprising the following steps:
preparing an etching solution, wherein the etching solution comprises the following components: water H as solvent2O and dissolved in the H2A solute of O, the solute being sodium iodide, NaI, and only hydrogen chloride, HCl;
And placing the mercury cadmium telluride with the CdTe film on the surface in the corrosive liquid, standing for a preset time period, and taking out.
2. The corrosion method of the tellurium-cadmium-mercury surface cadmium telluride-CdTe thin film of claim 1, wherein the NaI content is more than or equal to 1 g and less than or equal to 5 g;
the content of HCl is more than or equal to 0.1 ml and less than or equal to 2 ml;
said H2The content of O is 50 ml or more and 100 ml or less.
3. The corrosion method of the mercury cadmium telluride surface CdTe thin film as claimed in claim 2, wherein the NaI content is 2 g;
the content of HCl is 1 ml;
said H2The O content was 70 ml.
4. The etching method of the mercury cadmium telluride surface CdTe thin film as claimed in claim 3, wherein the solute further comprises: iodine solute I2。
5. The corrosion method of the tellurium-cadmium-mercury surface cadmium telluride CdTe thin film as claimed in claim 4, wherein I is2The content of (A) is not less than 1 g and not more than 10 g.
6. The corrosion method of the tellurium-cadmium-mercury surface cadmium telluride CdTe thin film as claimed in claim 5, wherein I is2The content of (B) is 2 g.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010770895.2A CN112592719B (en) | 2020-08-04 | 2020-08-04 | Corrosive liquid and corrosion method for corroding cadmium telluride CdTe thin film on mercury cadmium telluride surface |
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| CN202010770895.2A CN112592719B (en) | 2020-08-04 | 2020-08-04 | Corrosive liquid and corrosion method for corroding cadmium telluride CdTe thin film on mercury cadmium telluride surface |
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| Publication Number | Publication Date |
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| CN112592719A CN112592719A (en) | 2021-04-02 |
| CN112592719B true CN112592719B (en) | 2022-06-28 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN100544040C (en) * | 2007-04-29 | 2009-09-23 | 上海理工大学 | The treatment process of cadmium telluride material surface oxidation film |
| CN102592983B (en) * | 2012-02-07 | 2014-04-09 | 中国科学院上海技术物理研究所 | Wet etching method of Mn-Co-Ni-O thermosensitive thin film |
| CN105336600B (en) * | 2014-08-14 | 2019-04-19 | 中国科学院微电子研究所 | Form the method and its wet etching mixture formula of metal silicide |
| CN105304769A (en) * | 2015-09-21 | 2016-02-03 | 山东浪潮华光光电子股份有限公司 | Preparation method for four-element chip with enhanced GaP rough surface |
| CN107731676A (en) * | 2017-09-20 | 2018-02-23 | 南昌大学 | A kind of preparation method of AlGaInP film LED chips Cutting Road |
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